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At least 73 records · Page 4

Epitaxial thinning process

A method is described for thinning an epitaxial layer of a wafer that is to be used in producing diodes having a specified breakdown voltage and which also facilitates the thinning process. Current is passed through the epitaxial layer, by connecting a current source between the substrate of the wafer and an electrolyte in which the wafer is immersed. When the wafer is initially immersed, the voltage across the wafer initially drops and then rises at a steep rate. When light is applied to the wafer the voltage drops, and when the light is interrupted the voltage rises again. These changes in voltage, each indicate the breakdown voltage of a Schottky diode that could be prepared from the wafer at that time. The epitaxial layer is thinned by continuing to apply current through the wafer while it is immersed and light is applied, to form an oxide film and when the oxide film is thick the wafer can then be cleaned of oxide and the testing and thinning continued. Uninterrupted thinning can be achieved by first forming an oxide film, and then using an electrolyte that dissolves the oxide about as fast as it is being formed, to limit the thickness of the oxide layer.

Siegel, C. M.↗

Pulse ignition characterization of mercury ion thruster hollow cathode using an improved pulse ignitor

An investigation of the high voltage pulse ignition characteristics of the 8 cm mercury ion thruster neutralizer cathode identified a low rate of voltage rise and long pulse duration as desirable factors for reliable cathode starting. Cathode starting breakdown voltages were measured over a range of mercury flow rates and tip heater powers for pulses with five different rates of voltage rise. Breakdown voltage requirements for the fastest rising pulse (2.5 to 3.0 kV/micro sec) were substantially higher (2 kV or more) than for the slowest rising pulse (0.3 to 0.5 kV/micro sec) for the same starting conditions. Also described is an improved, low impedance pulse ignitor circuit which reduces power losses and eliminates problems with control and packaging associated with earlier designs.

Wintucky, E. G.↗

Pulse ignition characterization of mercury ion thruster hollow cathode using an improved pulse ignitor

An investigation of the high voltage pulse ignition characteristics of the 8-cm mercury ion thruster neutralizer cathode identified a low rate of voltage rise and long pulse duration as desirable factors for reliable cathode starting. Cathode starting breakdown voltages were measured over a range of mercury flow rates and tip heater powers for pulses with five different rates of voltage rise. Breakdown voltage requirements for the fastest rising pulse (2.5 to 3.0 kV/microsec) were substantially higher (2 kV or more) than for the slowest rising pulse (0.3 to 0.5 kV/microsec) for the same starting conditions. The paper also describes an improved, low impedance pulse ignitor circuit which reduces power losses and eliminates problems with control and packaging associated with earlier designs.

Wintucky, E. G.↗

Performance and Reliability of Solid Tantalum Capacitors at Cryogenic Conditions

Performance of different types of solid tantalum capacitors was evaluated at room and low temperatures, down to 15 K. The effect of temperature on frequency dependencies of capacitance, effective series resistances (ESR), leakage currents, and breakdown voltages has been investigated and analyzed. To assess thermo-mechanical robustness of the parts, several groups of loose capacitors and those soldered on FR4 boards were subjected to multiple (up to 500) temperature cycles between room temperature and 77 K. Experiments and mathematical modeling have shown that degradation in tantalum capacitors at low temperatures is mostly due to increasing resistance of the manganese cathode layer, resulting in substantial decrease of the roll-off frequency. Absorption currents follow a power law, I approximately t(sup -m), with the exponent m varying from 0.8 to 1.1. These currents do not change significantly at cryogenic conditions and the value of the exponent remains the same down to 15 K. Variations of leakage currents with voltage can be described by Pool-Frenkel and Schottky mechanisms of conductivity, with the Schottky mechanism prevailing at cryogenic conditions. Breakdown voltages of tantalum capacitors increase and the probability of scintillations decreases at cryogenic temperatures. However, breakdown voltages measured during surge current testing decrease at liquid nitrogen (LN) compared to room-temperature conditions. Results of temperature cycling suggest that tantalum capacitors are capable of withstanding multiple exposures to cryogenic conditions, but the probability of failures varies for different part types.

Teverovsky, Alexander↗

Magnetic Ignition of Pulsed Gas Discharges in Air of Low Pressure in a Coaxial Plasma Gun

The effect of an axial magnetic field on the breakdown voltage of a coaxial system of electrodes has been investigated by earlier workers. For low values of gas pressure times electrode spacing, the breakdown voltage is decreased by the application of the magnetic field. The electron cyclotron radius now assumes the role held by the mean free path in nonmagnetic discharges and the breakdown voltage becomes a function of the magnetic flux density. In this paper the dependence of the formative time lag as a function of the magnetic flux density is established and the feasibility of using a magnetic field for igniting high-voltage, high-current discharges is shown through theory and experiment. With a 36 microfarad capacitor bank charged to 48,000 volts, a peak current of 1.3 x 10( exp 6) amperes in a coaxial type of plasma gun was achieved with a current rise time of only 2 microseconds.

Thom, Karlheinz↗

Gas Composition Sensing Using Carbon Nanotube Arrays

This innovation is a lightweight, small sensor for inert gases that consumes a relatively small amount of power and provides measurements that are as accurate as conventional approaches. The sensing approach is based on generating an electrical discharge and measuring the specific gas breakdown voltage associated with each gas present in a sample. An array of carbon nanotubes (CNTs) in a substrate is connected to a variable-pulse voltage source. The CNT tips are spaced appropriately from the second electrode maintained at a constant voltage. A sequence of voltage pulses is applied and a pulse discharge breakdown threshold voltage is estimated for one or more gas components, from an analysis of the current-voltage characteristics. Each estimated pulse discharge breakdown threshold voltage is compared with known threshold voltages for candidate gas components to estimate whether at least one candidate gas component is present in the gas. The procedure can be repeated at higher pulse voltages to estimate a pulse discharge breakdown threshold voltage for a second component present in the gas. The CNTs in the gas sensor have a sharp (low radius of curvature) tip; they are preferably multi-wall carbon nanotubes (MWCNTs) or carbon nanofibers (CNFs), to generate high-strength electrical fields adjacent to the tips for breakdown of the gas components with lower voltage application and generation of high current. The sensor system can provide a high-sensitivity, low-power-consumption tool that is very specific for identification of one or more gas components. The sensor can be multiplexed to measure current from multiple CNT arrays for simultaneous detection of several gas components.

Li, Jing↗

Trimming epitaxial GaAs Schottky-diode parameters via anodic oxidation

Present day receivers operating at millimeter and sub-millimeter wavelengths most often rely, for their first mixers, on Schottky-barrier diodes formed on epitaxial GaAs. Crucial parameters for these diodes are breakdown voltage, series resistance, junction capacitance and forward conduction mechanism. Some of these are improved, others impaired, by change of epitaxy thickness. This paper describes experience with optimizing GaAs Schottky-diode parameters by anodic oxidation thinning of GaAs epitaxial layers. Monitoring of breakdown voltage of epitaxial GaAs in anodic oxidation solution provides indication of when thinning should be stopped in subjection to the breakdown voltage specification of diodes to be made from the material. Mixer and frequency-multiplier performance superior to any previously reported have been achieved by this technique.

Siegel, C. M.↗

Development and fabrication of low ON resistance high current vertical VMOS power FETs

The design of a VMOS Power FET exhibiting low ON resistance, high current as well as high breakdown voltage and fast switching speeds is described. The design which is based on a 1st-order device model, features a novel polysilicon-gate structure and fieldplated groove termination to achieve high packing density and high breakdown voltage, respectively. One test chip, named VNTKI, can block 180 V at an ON resistence of 2.5 ohm. A 150 mil x 200 mil (.19 sq cm) experimental chip has demonstrated a breakdown voltage of 200v, an ON resistance of 0.12 ohm, a switching time of less than 100 ns, and a pulse drain - current of 50 A with 10 V gate drive.

Kay, S.↗

Low power arcjet thruster pulse ignition

An investigation of the pulse ignition characteristics of a 1 kW class arcjet using an inductive energy storage pulse generator with a pulse width modulated power converter identified several thruster and pulse generator parameters that influence breakdown voltage including pulse generator rate of voltage rise. This work was conducted with an arcjet tested on hydrogen-nitrogen gas mixtures to simulate fully decomposed hydrazine. Over all ranges of thruster and pulser parameters investigated, the mean breakdown voltages varied from 1.4 to 2.7 kV. Ignition tests at elevated thruster temperatures under certain conditions revealed occasional breakdowns to thruster voltages higher than the power converter output voltage. These post breakdown discharges sometimes failed to transition to the lower voltage arc discharge mode and the thruster would not ignite. Under the same conditions, a transition to the arc mode would occur for a subsequent pulse and the thruster would ignite. An automated 11 600 cycle starting and transition to steady state test demonstrated ignition on the first pulse and required application of a second pulse only two times to initiate breakdown.

Sarmiento, Charles J.↗

Low power arcjet thruster pulse ignition

An investigation of the pulse ignition characteristics of a 1 kW class arcjet using an inductive energy storage pulse generator with a pulse width modulated power converter identified several thruster and pulse generator parameters that influence breakdown voltage including pulse generator rate of voltage rise. This work was conducted with an arcjet tested on hydrogen-nitrogen gas mixtures to simulate fully decomposed hydrazine. Over all ranges of thruster and pulser parameters investigated, the mean breakdown voltages varied from 1.4 to 2.7 kV. Ignition tests at elevated thruster temperatures under certain conditions revealed occasional breakdowns to thruster voltages higher than the power converter output voltage. These post breakdown discharges sometimes failed to transition to the lower voltage arc discharge mode and the thruster would not ignite. Under the same conditions, a transition to the arc mode would occur for a subsequent pulse and the thruster would ignite. An automated 11 600 cycle starting and transition to steady state test demonstrated ignition on the first pulse and required application of a second pulse only two times to initiate breakdown.

Sarmiento, Charles J.↗

Failure Modes in Capacitors When Tested Under a Time-Varying Stress

Steady step surge testing (SSST) is widely applied to screen out potential power-on failures in solid tantalum capacitors. The test simulates the power supply's on and off characteristics. Power-on failure has been the prevalent failure mechanism for solid tantalum capacitors for decoupling applications. On the other hand, the SSST can also be reviewed as an electrically destructive test under a time-varying stress. It consists of rapidly charging the capacitor with incremental voltage increases, through a low resistance in series, until the capacitor under test is electrically shorted. Highly accelerated life testing (HALT) is usually a time-efficient method for determining the failure mechanism in capacitors; however, a destructive test under a time-varying stress like SSST is even more effective. It normally takes days to complete a HALT test, but it only takes minutes for a time-varying stress test to produce failures. The advantage of incorporating specific time-varying stress into a statistical model is significant in providing an alternative life test method for quickly revealing the failure modes in capacitors. In this paper, a time-varying stress has been incorporated into the Weibull model to characterize the failure modes. The SSST circuit and transient conditions to correctly test the capacitors is discussed. Finally, the SSST was applied for testing polymer aluminum capacitors (PA capacitors), Ta capacitors, and multi-layer ceramic capacitors with both precious metal electrode (PME) and base-metal-electrodes (BME). It appears that testing results are directly associated to the dielectric layer breakdown in PA and Ta capacitors and are independent on the capacitor values, the way the capacitors being built, and the manufactures. The testing results also reveal that ceramic capacitors exhibit breakdown voltages more than 20 times the rated voltage, and the breakdown voltages are inverse proportional to the dielectric layer thickness. The possibility of ceramic capacitors in front-end decoupling applications to block the surge noise from a power supply is also discussed.

Liu, David (Donhang)↗

Process for High-Rate Fabrication of Alumina Nanotemplates

An anodizing process, at an early stage of development at the time of reporting the information for this article, has shown promise as a means of fabricating alumina nanotemplates integrated with silicon wafers. Alumina nanotemplates are basically layers of alumina, typically several microns thick, in which are formed approximately regular hexagonal arrays of holes having typical diameters of the order of 10 to 100 nm. Interest in alumina nanotemplates has grown in recent years because they have been found to be useful as templates in the fabrication of nanoscale magnetic, electronic, optoelectronic, and other devices. The present anodizing process is attractive for the fabrication of alumina nanotemplates integrated with silicon wafers in two respects: (1) the process involves self-ordering of the holes; that is, the holes as formed by the process are spontaneously arranged in approximately regular hexagonal arrays; and (2) the rates of growth (that is, elongation) of the holes are high enough to make the process compatible with other processes used in the mass production of integrated circuits. In preparation for fabrication of alumina nanotemplates in this process, one first uses electron-beam evaporation to deposit thin films of titanium, followed by thin films of aluminum, on silicon wafers. Then the alumina nanotemplates are formed by anodizing the aluminum layers, as described below. In experiments in which the process was partially developed, the titanium films were 200 A thick and the aluminum films were 5 m thick. The aluminum films were oxidized to alumina, and the arrays of holes were formed by anodizing the aluminum in aqueous solutions of sulfuric and/or oxalic acid at room temperature (see figure). The diameters, spacings, and rates of growth of the holes were found to depend, variously, on the composition of the anodizing solution, the applied current, or the applied potential, as follows: In galvanostatically controlled anodizing, regardless of the chemical composition of the solution, relatively high current densities (50 to 100 mA/cm2) resulted in arrays of holes that were more nearly regular than were those formed at lower current densities. . The rates of elongation of the holes were found to depend linearly on the applied current density: the observed factor of proportionality was 1.2 (m/h)/(mA/cm2). For a given fixed current density and room temperature, the hole diameters were found to depend mainly on the chemical compositions of the anodizing solutions. The holes produced in sulfuric acid solutions were smaller than those produced in oxalic acid solutions. The arrays of holes produced in sulfuric acid were more ordered than were those produced in oxalic acid. . The breakdown voltage was found to decrease logarithmically with increasing concentration of sulfuric acid. The breakdown voltage was also found to decrease with temperature and to be accompanied by a decrease in hole diameter. The hole diameter was found to vary linearly with applied potential, with a slope of 2.1 nm/V. This slope differs from slopes (2.2 and 2.77 nm/V) reported for similar prior measurements on nanotemplates made from bulk aluminum. The differences among these slopes may be attributable to differences among impurities and defects in bulk and electron-beam-evaporated aluminum specimens.

Myung, Nosang↗

High-efficiency, deep-junction, epitaxial InP solar cells on (100) and (111)B InP substrates

We report on the development and performance of deep-junction (approximately 0.25 micron), graded-emitter-doped, n(sup +)-p InP solar cells grown by metallorganic chemical vapor deposition (MOCVD). A novel, diffusion-transport process for obtaining lightly-doped p-type base regions of the solar cell is described. The I-V data and external quantum-efficiency response of these cells are presented. The best active-area AMO efficiency for these deep-junction cells on (100)-oriented InP substrates is 16.8 percent, with a J(sub SC) of 31.8 mA/sq cm, a V(sub OC) of 0.843 V, and a fill-factor of 0.85. By comparison, the best cell efficiency on the (111)B-oriented InP substrates was 15.0 percent. These efficiency values for deep-junction cells are encouraging and compare favorably with performance of thin-emitter (0.03 micron) epitaxial cells as well as that of deep-emitter diffused cells. The cell performance and breakdown voltage characteristics of a batch of 20 cells on each of the orientations are presented, indicating the superior breakdown voltage properties and other characteristics of InP cells on the (111)B orientation. Spectral response, dark I-V data, and photoluminescence (PL) measurements on the InP cells are presented with an analysis on the variation in J(sub SC) and V(sub OC) of the cells. It is observed, under open-circuit conditions, that lower-V(sub OC) cells exhibit higher band-edge PL intensity for both the (100) and (111)B orientations. This anomalous behavior suggests that radiative recombination in the heavily-doped n(sup +)-InP emitter may be detrimental to achieving higher V(sub OC) in n(sup +)-p InP solar cells.

Venkatasubramanian, R.↗

Reliability Effects of Surge Current Testing of Solid Tantalum Capacitors

Solid tantalum capacitors are widely used in space applications to filter low-frequency ripple currents in power supply circuits and stabilize DC voltages in the system. Tantalum capacitors manufactured per military specifications (MIL-PRF-55365) are established reliability components and have less than 0.001% of failures per 1000 hours (the failure rate is less than 10 FIT) for grades D or S, thus positioning these parts among electronic components with the highest reliability characteristics. Still, failures of tantalum capacitors do happen and when it occurs it might have catastrophic consequences for the system. This is due to a short-circuit failure mode, which might be damaging to a power supply, and also to the capability of tantalum capacitors with manganese cathodes to self-ignite when a failure occurs in low-impedance applications. During such a failure, a substantial amount of energy is released by exothermic reaction of the tantalum pellet with oxygen generated by the overheated manganese oxide cathode, resulting not only in destruction of the part, but also in damage of the board and surrounding components. A specific feature of tantalum capacitors, compared to ceramic parts, is a relatively large value of capacitance, which in contemporary low-size chip capacitors reaches dozens and hundreds of microfarads. This might result in so-called surge current or turn-on failures in the parts when the board is first powered up. Such a failure, which is considered as the most prevalent type of failures in tantalum capacitors [I], is due to fast changes of the voltage in the circuit, dV/dt, producing high surge current spikes, I(sub sp) = Cx(dV/dt), when current in the circuit is unrestricted. These spikes can reach hundreds of amperes and cause catastrophic failures in the system. The mechanism of surge current failures has not been understood completely yet, and different hypotheses were discussed in relevant literature. These include a sustained scintillation breakdown model [1-3]; electrical oscillations in circuits with a relatively high inductance [4-6]; local overheating of the cathode [5,7, 8]; mechanical damage to tantalum pentoxide dielectric caused by the impact of MnO2 crystals [2,9, 10]; or stress-induced-generation of electron traps caused by electromagnetic forces developed during current spikes [11]. A commonly accepted explanation of the surge current failures is that at unlimited current supply during surge current conditions, the self-healing mechanism in tantalum capacitors does not work, and what would be a minor scintillation spike if the current were limited, becomes a catastrophic failure of the part [l, 12]. However, our data show that the scintillation breakdown voltages are significantly greater that the surge current breakdown voltages, so it is still not clear why the part, which has no scintillations, would fail at the same voltage during surge current testing (SCT).

Teverovsky, Alexander↗

High-voltage 6H-SiC p-n junction diodes

A chemical vapor deposition (CVD) process has been used to produce device structures of n- and p-type 6H-SiC epitaxial layers on commercially produced single-crystal 6H-SiC wafers. Mesa-style p-n junction diodes were successfully fabricated from these device structures using reactive ion etching, oxide passivation, and electrical contact metallization techniques. When tested in air, the 6H-SiC diodes displayed excellent rectification characteristics up to the highest temperature tested, 600 C. To observe avalanche breakdown of the p-n junction diodes, testing under a high-electrical-strength liquid was necessary. The avalanche breakdown voltage was 1000 V representing the highest reverse breakdown voltage to be reported for any CVD-grown SiC diode.

Matus, L. G.↗

Checking Plumbing Connections Electrically

Ports identified by Zener-diode voltages. Electronic verification circuits assist in assembly of multiple-line plumbing by helping to ensure proper lines joined to proper input and output ports. Zener diode and electronic jack added to each fixture. Zener breakdown voltage is different for each port. When fixture makes fluid connection, also makes electrical connection. Zener breakdown voltage identifies line, port, or valve to which fluid line connected.

Chappel, Jerry L.↗

Relationship of Cure Temperature to Mechanical, Physical, and Dielectric Performance of PDMS Glass Composite for Electric Motor Insulation

Achieving NASAs aggressive fuel burn and emission reduction for N-plus-3 aircraft will require hybrid electric propulsion system in which electric motors driven by either power generated from turbine or energy storage system will power the fan for propulsion. Motors designed for hybrid electric aircraft are expected to operate at medium to high voltages over long durations in a high altitude service environment. Such conditions have driven research toward the development of wire insulation with improved mechanical strength, thermal stability and increased breakdown voltage. The silicone class of materials has been considered for electric wire insulation due to its inherent thermal stability, dielectric strength and mechanical integrity. This paper evaluates the dependence of these properties on the cure conditions of a polydimethyl-siloxane (PDMS) elastomer; where both cure temperature and base-to-catalyst ratio were varied. The PDMS elastomer was evaluated as a bulk material and an impregnation matrix within a lightweight glass veil support. The E-glass support was selected for mechanical stiffness and dielectric strength. This work has shown a correlation between cure conditions and material physical properties. Tensile strength increased with cure temperature whereas breakdown voltage tended to be independent of process variations. The results will be used to direct material formulation based on specific insulation requirements.

insulation↗

Solid-State Single-Photon Counter

Avalanche photodiode used to detect single photons if cooled to optimum temperature and overbiased beyond breakdown voltage. Offers two to three times sensitvity of photomultiplier tubes commonly used for photon detection. When cooled to reduce number of thermal carriers, avalanche photodiode reverse-biased beyond normal breakdown voltage to give it extremely-high internal gain of 10 to seventh power to 10 to eigth power. Advantages of solid-state devices to applications requiring low-level light detection, optical communication, astronomy, remote sensing, optical metrology, and optical signal processing.

Robinson, D. L.↗