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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 73 records · Page 4

Laboratory study of the temporal evolution of the current-voltage characteristic of a probe in the wake of an object immersed in a pulsed flowing plasma

Measurements of the current-voltage characteristics of a Langmuir probe in the near wake of a disk immersed in a pulsed flowing plasma were made. A 1 cm diameter biasable sphere was placed in the ion-free near wake region of a 10 cm diameter disk immersed in a Mach 8 pulsed flowing plasma. The current-voltage characteristic of the sphere was observed as a function of time as the sphere bias was scanned from -5000 V to +1000 V. The collected current is found to be monotonically increasing with increasing positive bias voltage but exhibits a threshold voltage for current collection as the bias voltage becomes more negative. Potential measurements in the wake region were made for a sphere bias voltages below, at, and above the current collection threshold for a number of times during the wake formation period. The time evolution of the potential profile is shown to change as the sheath around the biased sphere is established. Predictions from the particle trajectory code SIMION are compared with data, showing excellent agreement in the prediction of the current collection threshold.

Meassick, S.↗

Observation of time-dependent internal charge amplification in a planar germanium detector at cryogenic temperature

For the first time, time-dependent internal charge amplification through impact ionization has been observed in a planar germanium (Ge) detector operated at cryogenic temperature. In a time period of 30 and 45 min after applying a bias voltage, the charge energy corresponding to a baseline of the 59.54 keVγ rays from a 241 Am source is amplified for a short period of time and then decreases back to the baseline. The amplification of charge energy depends strongly on the applied positive bias voltage with drifting holes across the detector. No such phenomenon is visible with drifting electrons across the detector. We find that the observed charge amplification is dictated by the impact ionization of charged states, which has a strong correlation with impurity level and applied electric field. We analyze the dominant physics mechanisms that are responsible for the creation and the impact ionization of charged states. Our analysis suggests that the appropriate level of impurity in a Ge detector can enhance charge yield through the impact ionization of charged states to achieve extremely low-energy detection threshold (< 10 meV) for MeV-scale dark matter searches if the charge amplification can be stabilized.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗

Analytical modeling of satellites in geosynchronous environment

Experiences with surface charging of geosynchronous satellites are reviewed and mechanisms leading to discharges on satellite surfaces are considered. It was found that the large differential voltages between the surface and the substrate required to produce massive laboratory discharges do not occur on satellites in space. Analytical modeling predictions supported by dielectric charging data from P78-2, SCATHA (Spacecraft Charging at High Altitudes) flight results are discussed. Ungrounded insulator areas, buried charge layers (due to mid-energy range particles), and positive differential voltages (where structure voltages are less negative than surrounding dielectric surface voltages) are considered as possible mechanisms producing satellite charge up.

Stevens, N. J.↗

Investigation of high voltage spacecraft system interactions with plasma environments

The exposure of high voltage spacecraft systems to the charged particle environment of space can produce interactions that will influence system operation. An experimental investigation of these interactions has been undertaken for insulator and conductor test surfaces biased up to plus or minus 1 kV in a simulated low earth orbit charged particle environment. It has been found that these interactions are controlled by the insulator surfaces surrounding the biased conductors. For positive applied voltages the electron current collection can be enhanced by the insulators. For negative applied voltages the insulator surface confines the voltage to the conductor region; this can cause arcing. Understanding these interactions and the technology to control their impact on system operation is essential to the design of solar cell arrays for ion drive propulsion applications that use direct drive power processing.

Stevens, N. J.↗

Precise synchronization of phasor measurements in electric power systems

Phasors representing positive sequence voltages and currents in a power network are in the most important parameters in several monitoring, control, and protection functions in interconnected electric power networks. Recent advances in computer relaying have led to very efficient and accurate phasor measurement systems. When the phasors to be measured are separated by hundreds of miles, it becomes necessary to synchronize the measurement processes, so that a consistent description of the state of the power system can be established. Global Positioning System (GPS) transmissions offer an ideal source for synchronization of phasor measurements. The concept and implementation of this technique are described. Several uses of synchronized phasor measurements are also described. Among these are improved state estimation algorithms, state estimator enhancements, dynamic state estimates, improved control techniques, and improved protection concepts.

Phadke, Arun G.↗

Inception of Snapover and Gas Induced Glow Discharges

Ground based experiments of the snapover phenomenon were conducted in the large vertical simulation chamber at the Glenn Research Center (GRC) Plasma Interaction Facility (PIF). Two Penning sources provided both argon and xenon plasmas for the experiments. The sources were used to simulate a variety of ionospheric densities pertaining to a spacecraft in a Low Earth Orbital (LEO) environment. Secondary electron emission is believed responsible for dielectric surface charging, and all subsequent snapover phenomena observed. Voltage sweeps of conductor potentials versus collected current were recorded in order to examine the specific charging history of each sample. The average time constant for sample charging was estimated between 25 and 50 seconds for all samples. It appears that current drops off by approximately a factor of 3 over the charging time of the sample. All samples charged in the forward and reverse bias directions, demonstrated hysteresis. Current jumps were only observed in the forward or positive swept voltage direction. There is large dispersion in tile critical snapover potential when repeating sweeps on any one sample. The current ratio for the first snapover region jumps between 2 and 4.6 times, with a standard deviation less than 1.6. Two of the samples showed even larger current ratios. It is believed the second large snapover region is due to sample outgassing. Under certain preset conditions, namely at the higher neutral gas background pressures, a perceptible blue-green glow was observed around the conductor. The glow is believed to be a result of secondary electrons undergoing collisions with an expelled tenuous cloud of gas, that is outgassed from the sample. Spectroscopic measurements of the glow discharge were made in an attempt to identify specific lines contributing to the observed glow.

Galofaro, J. T.↗

Changes in the superconducting properties of high-T(sub c) ceramics produced by applied electric fields

Effect of an electrostatic field in the electrode-insulator-superconductor system on the current-voltage characteristics of high-T(sub c) ceramics with various composition and different preparation technology has been studied at 77 K. Ceramics of Y-Ba-Cu-O (123) and Bi-Pb-Sr-Ca-Cu-O (2223) systems and also ones doped by Ag have been used. Electric field strength has been up to 140 MV/m. It has been shown that there are reversible changes in the critical current I(sub c) and in the conductivity in electric field at the currents somewhat more than I(sub c) at T is less than T(sub c), while at T is greater than T(sub c) the noticeable electric field effect has not been found. These effects are qualitatively similar in both ceramic systems. High negative and positive gate voltages result in an increase of the conductivity. The electric field effect is modified by magnetic field H. The field effect decreases with increasing magnetic field and disappears at H is greater than 30 Oe. In Y-Ba-Cu-O/Ag (10 wt. percent) ceramics the field effect is practically absent. It may be supposed that in the ceramics the field-induced effect is consistent with weak links at grain boundaries.

Smirnov, B. I.↗

Numerical simulation of a conducting disk partially covered by an insulator interacting with a plasma

A numerical simulation has been made of the 'pinhole effect' which produces the characteristic 'S-shaped' current-voltage curve. A disk-shaped conducting probe immersed in a plasma is modeled using a particle-in-cell (PIC) code. A probe partially covered by a very thin insulating layer is considered, as well as a probe mounted on an insulating disk. The simulation uses a cylindrical particle mover and allows for a variable number of particles in the system. The simulation space grid uses three different mesh sizes, the coarsest being away from the probe and the finest near the probe, in order to accurately calculate the trajectories of the simulation particles contributing the current to the probe and to the surface charge density on the dielectric. The calculation of the electrostatic potential is done self-consistently using successive over-relaxation (SOR). Backscattering and secondary electron emission are included for the case of positive probe voltage.

Chaky, R. C.↗

Manipulating the insulator–metal transition through tip-induced hydrogenation

Manipulating the insulator–metal transition in strongly correlated materials has attracted a broad range of research activity due to its promising applications in, for example, memories, electrochromic windows and optical modulators. Electric-field-controlled hydrogenation using ionic liquids and solid electrolytes is a useful strategy to obtain the insulator–metal transition with corresponding electron filling, but faces technical challenges for miniaturization due to the complicated device architecture. Here, in this work, we demonstrate reversible electric-field control of nanoscale hydrogenation into VO 2 with a tunable insulator–metal transition using a scanning probe. The Pt-coated probe serves as an efficient catalyst to split hydrogen molecules, while the positive-biased voltage accelerates hydrogen ions between the tip and sample surface to facilitate their incorporation, leading to non-volatile transformation from insulating VO 2 into conducting H x VO 2 . Remarkably, a negative-biased voltage triggers dehydrogenation to restore the insulating VO 2 . This work demonstrates a local and reversible electric-field-controlled insulator–metal transition through hydrogen evolution and presents a versatile pathway to exploit multiple functional devices at the nanoscale.

36 MATERIALS SCIENCE↗

Controlled removal of hydrogen atoms from H-terminated silicon surfaces

The controlled formation of dangling bond structures on a H-terminated silicon surface is the first step in an atomically precise method of fabrication of silicon quantum electronic devices. An ultrahigh vacuum scanning tunneling microscope (STM) tip is used to selectively desorb hydrogen atoms from a Si(100)-2x1:H surface by injecting electrons with the sample held at a positive bias voltage. The authors propose a lithography method that allows the STM to operate under negative bias imaging conditions and simultaneously desorb H atoms as required. A high frequency signal is added to the negative bias voltage to deliver the required energy for hydrogen removal. The resulting current at this frequency and its harmonics are filtered to minimize their effect on the operation of the STM’s feedback control loop. The authors show that the chance of tip-sample crash during the lithography process is reduced by employing this method. They also demonstrate that this approach offers a significant potential for controlled and precise removal of H atoms from a H-terminated silicon surface and thus may be used for the fabrication of practical silicon-based atomic-scale devices.

42 ENGINEERING↗

Big Data Synchrophasor Monitoring and Analytics for Resiliency Tracking (BDSMART)

This report contains key findings from a project titled Big Data Synchrophasor Monitoring and Analytics for Resiliency Tracking (BDSMART), which was carried out through a collaborative effort of a team of researchers from Texas A&M Engineering Experiment Station, Temple University, and Quanta Technology, LLC. The in-kind support came from OSIsoft (acquired by AVEVA), which provided their PI Historian software to demonstrate the use case of streaming PMU data. The first section of the report describes the project goals and objectives related to the development of Machine Learning (ML) models capable of detecting and classifying events by processing phasor measurements captured in the field by Phasor Measurement Units (PMUs). The data for this study was contributed by the utilities/ISOs from the Western and Eastern interconnects and ERCOT, further referred to as Interconnect B (IC B), Interconnect A (IC A), and Interconnect C (IC C), respectively. The approach that the BDSMART Research Team proposed and the key research tasks defined by the team are outlined in this section. The next section describes the technical approach. We first discuss the data constraints related to the PMU measurements and data interpretation constraints imposed by the data contributors. They provided neither the topological information of the grid nor PMU placement locations and captured recorded data at very few locations in the system with the reporting rate of either 30 or 60 fps. The recordings are mostly positive sequence voltage, frequency, and ROCOF, and in some limited cases, three-phase voltages and currents. We then reflect on the bad data issues that stem from poor recording practices and vague definitions of the PMU status bits to supposedly be used for bad data identification. Finally, the data discovery points to imprecise time stamps with incomplete event start/end time, as well as inconsistent and incomplete event labeling, which combined make the implementation of the data models using supervising learning quite challenging. Following the data discovery study, we hypothesize that because the IC B data has the most complete labels, we should focus our model development on that data and then test it on data from other interconnects. We also define the common metrics used to evaluate the results from the ML algorithm tests. We concluded this section by summarizing the common ML models we used and explaining how we implemented and tested them. The issues from this section are expanded in the Training Dataset Report from this project. The final section of this report deals with the accomplishments and conclusions. As the accomplishments, we formulate the problem we are solving and what is achieved by solving the problem. We then reflect on each of the analytics tools we developed and point out the performance of each tool when applied to solving the mentioned problems. We reference this work for further details to the papers we published on each tool. In the conclusions, we give recommendations on how to improve future PMU recording practices to facilitate the ML algorithm implementation and guidance for the future standardization work aimed at clarifying the ambiguities associated with the PMU status bits. We finally list future tasks that can bring about further improvements in the proposed algorithms. The issues from this section are expanded in the Training, and Test Dataset Report filed at the project completion date.

97 MATHEMATICS AND COMPUTING↗

AlGaN High Electron Mobility Transistor for High-Temperature Logic

Here we report on AlGaN high electron mobility transistor (HEMT)-based logic development, using combined enhancement- and depletion-mode transistors to fabricate inverters with operation from room temperature up to 500°C. Our development approach included: (a) characterizing temperature-dependent carrier transport for different AlGaN HEMT heterostructures, (b) developing a suitable gate metal scheme for use in high temperatures, and (c) over-temperature testing of discrete devices and inverters. Hall mobility data (from 30°C to 500°C) revealed the reference GaN-channel HEMT experienced a 6.9x reduction in mobility, whereas the AlGaN channel HEMTs experienced about a 3.1x reduction. Furthermore, a greater aluminum contrast between the barrier and channel enabled higher carrier densities in the two-dimensional electron gas for all temperatures. The combination of reduced variation in mobility with temperature and high sheet carrier concentration showed that an Al-rich AlGaN-channel HEMT with a high barrier-to-channel aluminum contrast is the best option for an extreme temperature HEMT design. Three gate metal stacks were selected for low resistivity, high melting point, low thermal expansion coefficient, and high expected barrier height. The impact of thermal cycling was examined through electrical characterization of samples measured before and after rapid thermal anneal. The 200-nm tungsten gate metallization was the top performer with minimal reduction in drain current, a slightly positive threshold voltage shift, and about an order of magnitude advantage over the other gates in on-to-off current ratio. After incorporating the tungsten gate metal stack in device fabrication, characterization of transistors and inverters from room temperature up to 500°C was performed. The enhancement-mode (e-mode) devices’ resistance started increasing at about 200°C, resulting in drain current degradation. This phenomenon was not observed in depletion-mode (d-mode) devices but highlights a challenge for inverters in an e-mode driver and d-mode load configuration.

42 ENGINEERING↗

Active resistance capacitance filter design

Filters, formed by combinations of distributed RC elements with positive-feedback voltage amplifiers, provide transfer functions similar to those the heavier LC filters ordinarily employ. They also provide signal amplification.

Kerwin, W. J.↗

Investigation of failure mechanisms in integrated vacuum circuits

The fabrication techniques of integrated vacuum circuits are described in detail. Data obtained from a specially designed test circuit are presented. The data show that the emission observed in reverse biased devices is due to cross-talk between the devices and can be eliminated by electrostatic shielding. The lifetime of the cathodes has been improved by proper activation techniques. None of the cathodes on life test has shown any sign of failure after more than 3500 hours. Life tests of triodes show a decline of anode current by a factor of two to three after a few days. The current recovers when the large positive anode voltage (100 V) has been removed for a few hours. It is suggested that this is due to trapped charges in the sapphire substrate. Evidence of the presence of such charges is given, and a model of the charge distribution is presented consistent with the measurements. Solution of the problem associated with the decay of triode current may require proper treatment of the sapphire surface and/or changes in the deposition technique of the thin metal films.

Rosengreen, A.↗

A theoretical study of heterojunction and graded band gap type solar cells

A computer program was designed for the analysis of variable composition solar cells and applied to several proposed solar cell structures using appropriate semiconductor materials. The program simulates solar cells made of a ternary alloy of two binary semiconductors with an arbitrary composition profile, and an abrupt or Gaussian doping profile of polarity n-on-p or p-on-n with arbitrary doping levels. Once the device structure is specified, the program numerically solves a complete set of differential equations and calculates electrostatic potential, quasi-Fermi levels, carrier concentrations and current densities, total current density and efficiency as functions of terminal voltage and position within the cell. These results are then recorded by computer in tabulated or plotted form for interpretation by the user.

Sutherland, J. E.↗

Synchronization of wind turbine generators against an infinite bus under gusting wind conditions

Studies of synchronizing a wind turbine generator against an infinite bus are performed on a digital computer. In the digital simulation, wind gusts of different magnitudes and durations are hypothesized. Prior to the synchronization, differences of the frequency and phase position between voltages of the alternator and the bus are also included in the simulation. Solutions for rotor speed, generator power angle, electromagnetic torque, wind turbine torque, wind turbine blade pitch angle, and armature current are simulated and presented graphically. The ERDA-NASA 100-kW wind turbine is used as a case study. The results so obtained will thus have immediate applications.

Hwang, H. H.↗

Re-Configurable Electronics Characterization under Extreme Thermal Environment

The need for reconfigurable electronics is driven by requirements to survive longer missions and harsher environments. It is possible to compensate for degradations in Extreme Environments (EE). EE has effect on electronics: circuits are designed to exploit device characteristics and when a certain temperature or radiation range is exceeded the circuit function gradually degrades. It is possible to employ Hardening by reconfiguration (HBR) to mitigate drifts, degradation, or damage on electronic devices in EE by using reconfigurable devices and an adaptive self-reconfiguration of circuit topology. In this manner degraded components can be salvaged, and completely damaged components can be bypassed. The challenge of conventional design is replaced with that of designing a recover process that automatically performs the (re) design in place of the designer. The objective of testing a Digital Signal Processor (DSP) under the extreme temperatures was to determine the lowest temperature at which the DAP can operate. The objective of testing a Xilinx VirtexII Pro FPGA board was to initially find our whether the evaluation board and the FPGA would survive and continue at temperature ranges from -180 C, and 120 C. The Virtex II functioned correctly at the temperatures tested. The next test was done on the GM-C filter building block using the same temperature range as the Virtex II. The current lower and upper limits were shown to be reduced as the temperature gets lower. The device function can be recovered by increasing the Vb from .08V to .85V. The negative and positive saturation voltages increases as the temperature gets higher. The function of the device can be recovered by decreasing the Vb from .8V to around .75V. The next test was performed to test the recovery of the GmC low pass filter through Vb in a filter circuit. The test indicate that bias voltage control adjustment is an efficient mechanism for circuit recovery at extreme temperatures.

reliability↗