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At least 73 records · Page 4

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DOE OSTI2021

Enabling High-Temperature and High-Voltage Lithium-Ion Battery Performance through a Novel Cathode Surface-Targeted Additive

We report lithium-ion batteries (LIBs) are being used in locations and applications never imagined when they were first conceived. To enable this broad range of applications, it has become necessary for LIBs to be stable to an ever broader range of conditions, including temperature and energy. Unfortunately, while negative electrodes have received a great deal of focus in electrolyte development, stabilization of positive electrodes remains an elusive target. Here, we report a novel additive that shows the ability to protect positive electrodes against elevated temperatures and voltages. This additive can be used in small quantities, and its targeted behavior allows it to remain functional in complex electrolyte packages. This can prove an effective approach to targeting specific aspects of cell performance.

25 ENERGY STORAGE↗

DOE OSTI2022

Packaging of wide bandgap power electronic power stages

Design and packaging of wide bandgap (WBG) power electronic power stages are disclosed herein. An example apparatus includes a first printed circuit board (PCB) including: a first voltage phase circuit cluster; a second voltage phase circuit cluster; and a cluster of traces, the cluster of traces routed substantially perpendicular to the second voltage phase circuit cluster; a second PCB positioned below the first PCB; and a connector to connect the first PCB to the second PCB, the connector electrically coupled to the first voltage phase circuit cluster by the cluster of traces.

Singh, Brij N.↗

DOE OSTI2020

Scanning tunneling thermometer

Various examples are provided related to scanning tunneling thermometers and scanning tunneling microscopy (STM) techniques. In one example, a method includes simultaneously measuring conductance and thermopower of a nanostructure by toggling between: applying a time modulated voltage to a nanostructure disposed on an interconnect structure, the time modulated voltage applied at a probe tip positioned over the nanostructure, while measuring a resulting current at a contact of the interconnect structure; and applying a time modulated temperature signal to the nanostructure at the probe tip, while measuring current through a calibrated thermoresistor in series with the probe tip. In another example, a device includes an interconnect structure with connections to a first reservoir and a second reservoir; and a scanning tunneling probe in contact with a probe reservoir. Electrical measurements are simultaneously obtained for temperature and voltage applied to a nanostructure between the reservoirs.

Chinivaranahalli Shastry, Abhay Shankar↗

DOE OSTI2022

Scanning tunneling thermometer

Chinivaranahalli Shastry, Abhay Shankar↗

DOE OSTI2025

Modulating physicochemical interfaces enables li-rich oxides based ceramic solid-state li batteries under ambient conditions

Li-rich layered oxides exhibit promising potential applications in high-energy-density solid-state lithium metal batteries. Nevertheless, the strong oxidative oxygen species generate at high voltage, which poses great challenges to positive electrode-side interface stability. Herein, a robust in-situ polymerization gel polymer electrolyte with bifunctional additives is designed for interface modification. These additives, include lithium difluoro(oxalate) borate and LiPO 2 F 2 , regulate the Li + chemical environment in gel polymer electrolyte to enhance crosslink density without residual oligomer, which reduce gas generation and suppress contact loss, thus avoiding interfacial impedance divergence. Concurrently, the designed gel polymer electrolyte enables a wide electrochemical stability window (up to 4.7 V) and a high Li + transference number (0.82). Additionally, the additives induced F- and B-rich inorganic cathode-electrolyte interphase inhibits side reactions and oxygen/transition metal loss effectively, stabilizing the chemical interface. The as-constructed Li-rich layered oxides-based ceramic solid-state lithium metal batteries with gel polymer electrolyte interface modification exert a high discharge capacity of 276.5 mAh g -1 at 30 °C without external pressure, delivering a retention of 81.7% after 100 cycles at 25 mA g -1 during 2.0-4.7 V. This work provides a guideline for developing high-voltage solid-state lithium metal batteries via interfacial design.

Hu, Xinchao [Xiamen University (China)]↗

DOE OSTI2026

Supervised Learning-Based Spatial Position Estimation with Vertical Displacement for Hovering UAV Wireless Power Transfer

This study presents a supervised learning-based spatial position estimation approach for wireless power transfer (WPT) systems supporting hovering unmanned aerial vehicle (UAV) charging. Unlike stationary charging scenarios, hovering UAVs introduce continuous lateral misalignment and vertical displacement, leading to variations in magnetic coupling and reduced power transfer efficiency. To address this challenge, the proposed method estimates the relative spatial position of the receiver coil using only electrical measurements obtained at the secondary side. A supervised learning model is trained to map output voltage and current features to spatial coordinates, enabling position awareness without requiring external sensors, vision systems, or communication links. The sensing functionality is inherently integrated into the WPT system, allowing simultaneous power transfer and localization through the same magnetic interface. Experimental validation is conducted on a laboratory-scale prototype under varying lateral offsets and air-gap conditions. In addition, spline-based interpolation is employed to increase spatial data density for training. The results demonstrate that the proposed framework can capture spatial variations associated with both lateral and vertical displacement, providing reliable position estimation under hovering conditions. This work establishes a hardware-efficient, sensorless solution for UAV wireless charging and serves as a baseline for advanced data-driven position estimation methods in dynamic WPT systems.

Asa, Erdem [ORNL] (ORCID:0000000190884812)↗

DOE OSTI2020

Resistive Switching Memory Performance of Two-Dimensional Polyimide Covalent Organic Framework Films

Two-dimensional polyimide covalent organic framework (2D PI-NT COF) films were constructed on indium tin oxide-coated glass substrates to fabricate two-terminal sandwiched resistive memory devices. The 2D PI-NT COF films condensated from the reaction between 4,4',4"-triaminotriphenylamine and naphthalene-1,4,5,8-tetracarboxylic dianhydride under solvothermal conditions demonstrated high crystallinity, good orientation preference, tunable thickness, and low surface roughness. The well-aligned electron-donor (triphenylamine unit) and -acceptor (naphthalene diimide unit) arrays rendered the 2D PI-NT COF films a promising candidate for electronic applications. The memory devices based on 2D PI-NT COF films exhibited a typical write-once-read-many-time resistive switching behavior under an operating voltage of +2.30 V on the positive scan and -2.64 V on the negative scan. A high ON/OFF current ratio (>10 6 for the positive scan and 10 4 -10 6 for the negative scan) and long-term retention time indicated the high fidelity, low error, and high stability of the resistive memory devices. The memory behavior was attributed to an electric field-induced intramolecular charge transfer in an ordered donor-acceptor system, which provided the effective charge-transfer channels for injected charge carriers. Furthermore, this work represents the first example that explores the resistive memory properties of 2D PI-COF films, shedding light on the potential application of 2D COFs as information storage media.

2D covalent organic framework film↗

DOE OSTI2024

Enhanced spin pumping in heterostructures of coupled ferrimagnetic garnets

Spin pumping has significant implications for spintronics, providing a mechanism to manipulate and transport spins for information processing. Understanding and harnessing spin currents through spin pumping is critical for the development of efficient spintronic devices. The use of a magnetic insulator with low damping enhances the signal-to-noise ratio in crucial experiments such as spin-torque ferromagnetic resonance (FMR) and spin pumping. A magnetic insulator coupled with a heavy metal or quantum material offers a more straightforward model system, especially when investigating spin-charge interconversion processes to greater accuracy. This simplicity arises from the absence of unwanted effects caused by conduction electrons unlike in ferromagnetic metals. Here, we investigate the spin pumping in coupled ferrimagnetic (FiM) Y 3 Fe 5 O 12 (YIG)/Tm 3 Fe 5 O 12 (TmIG) bilayers combined with heavy-metal (Pt) using the inverse spin Hall effect. It is observed that magnon transmission occurs at both of the FiMs FMR positions. The enhancement of spin pumping voltage (V sp ) in the FiM garnet heterostructures is observed. The plausible reason might be the interfacial exchange coupling between FiMs. The modulation of V sp is achieved by tuning the bilayer structure. Further, the spin mixing conductance for these coupled systems is found to be ≈ 10 18 m –2 . Furthermore, our findings describe a coupled FiM system for the investigation of magnon coupling providing opportunities for magnonic devices.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

DOE OSTI2025

Comparison of Sequence Component-Based Fault Detection and Relay Coordination Algorithms in Inverter-Based Networks

Protection of inverter-based microgrids using sequence component-based relaying schemes is a promising solution. These methods offer several advantages, including lower computational requirements, compatibility with commercial relay systems, and cost-effectiveness compared to communication-based approaches. This article investigate the performance of various sequence component based schemes with the objective of identifying the algorithms that provide the best fault detection and relay coordination, solely relying on local voltages and current at relay terminals. Positive, negative and zero sequence impedance, admittance and power detection algorithms were tested on modified IEEE 13 bus test network for various shunt faults (LG, LL, LLG, LLL). Hardware-in-the-loop validation was achieved using the Typhoon real-time simulator, interfacing with a SEL 751 relay. This research demonstrates that while several algorithms are capable of detecting faults with sufficient accuracy, only a few are effective in achieving proper coordination. Validation results indicate that the negative sequence power approach provides the best performance in both fault detection and coordination.

Patel, Deepika [ORNL] (ORCID:0000000341099994)↗

DOE OSTI2020

Toroidal Field Reversing Switch

A motor-driven, high-current switch is being designed by Stäubli Electrical Connectors in collaboration with Princeton Plasma Physics Laboratory to reverse the DIII-D Toroidal field coil current. The existing field reversing procedure requires approximately 4 h of labor performed between run days to reconfigure the bus work, thus requiring a separate run day to complete experimental scans with both field directions. This typically results in different wall conditions which complicate the results or make them invalid. The proposed switch will complete the reversal process in approximately 4-5 min, between shots, so that wall conditions are not a factor, and easily fits within the 10-12 min DIII-D shot cycle. The switch is a compact design fitting into a 157.5 × 41 cm envelope. The switch uses two copper pins that slide between Stäubli MULTILAM contacts. The switch is rated for total current of 180-kA dc for 10 s with a 12-min repetition rate; the maximum operating coil current is 124-kA dc. The switch diagnostics include: voltage drop, current monitor, thermal monitors, position sensors, and motor torque. Here, the switch is rated for 300 cycles per year, and 3000 cycles overall before contact replacement, with contact inspection yearly. The design details and operation of the switch are covered in this article.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

DOE OSTI2020

A Test Bed for Evaluating Frequency Estimation Algorithms in Synthetic Inertia Control: User Manual

As penetration of converter interfaced generators (CIGs) increases, the need for CIG frequency control participation increases. Traditionally, research in this area has been performed using positive sequence simulation software, which provides voltage magnitude and phase measurements, but not point-on-wave (POW) measurements. This means that the effect of frequency estimation algorithms cannot be accurately modeled, especially when the voltage waveform is distorted by faults or load connection events. This report serves as a user manual for an electromagnetic transient simulation testbed, which allows for accurate modeling of frequency estimation and control techniques.

42 ENGINEERING↗

DOE OSTI2023

4.5m GTEM RS105 Test Capability Commissioning

This work details the reconfiguration of the 4.5 m Gigahertz Transverse Electromagnetic test facility at Sandia National Laboratories to operate in accordance with the RS105 (radiated susceptibility) test from MIL-STD-461 representing a high-altitude electromagnetic pulse. This reconfiguration involved removal of the existing continuous wave source and connecting both a high voltage feed and a coaxial feed housing the Marx bank pulser. Marx control settings were calibrated for several voltage levels across two pulsers, and position-dependent measurements of the peak electric field were taken throughout the test volume for each pulser. The results showed field uniformity and purity across the test volume comparable to continuous wave operations, and field peaks were measured from 1.63 kV/m to 54.8 kV/m, with maximum capabilities expected to exceed 100 kV/m. Some challenges in consistent pulser operations at lower Marx bank voltages and high frequency reflections in the system were identified for future capability improvements.

42 ENGINEERING↗

DOE OSTI2024

Voltage stability smart meter for analyzing voltage data and controlling an electrical power source and/or an electric appliance

Systems and methods for voltage stability monitoring and active/reactive power support are disclosed herein. In some embodiments, a smart electric meter of an end user in a grid power system can measure the voltage supplied to the end user via the grid power system, and can analyze the voltage data to detect critical voltage characteristics. The critical voltage characteristics may indicate that a voltage collapse event is likely. The smart electric meter can further estimate a voltage stability margin based on the voltage data. If necessary, the smart electric meter can control an electrical power source and/or an electric appliance positioned at or near the end user to increase the voltage stability margin.

Min, Liang↗

DOE OSTI2021

Maximized Hole Trapping in a Polystyrene Transistor Dielectric from a Highly Branched Iminobis(aminoarene) Side Chain

We synthesized highly branched and electron donating side chain subunits and attached them to polystyrene (PS) used as a dielectric layer in a pentacene field effect transistor. The influence of these groups on dielectric function, charge retention and threshold voltage shifts (ΔV th ) depending on their positions in dielectric multilayers was determined. We compared the observations made on an N-perphenylated iminobisaniline side chain with those from the same side chains modified with ZnO nanoparticles and with an adduct formed from tetracyanoethylene (TCNE). We also synthesized an analogue in which six methoxy groups are present instead of two amine nitrogens. At 6 mol % side chain, hopping transport was sufficient to cause shorting of the gate, while at 2 mol %, charge trapping was observable as transistor threshold voltage shifts (ΔV th ). Here, we created three types of devices: with the substituted PS layer as single layer dielectric, on top of a crosslinked PS layer but in contact with the pentacene (bilayers), and sandwiched between two PS layers in trilayers. Particularly large bias stress effects and ΔV th , larger than the hexamethoxy and previously studied dimethoxy analogs, were observed in the second case and the effects increased with the increasing electron donating properties of the modified side chains. The highest ΔV th was consistent with a majority of the side chains stabilizing trapped charge. Trilayer devices showed decreased charge storage capability compared to previous work in which we used less donating side chains but in higher concentrations. The ZnO and TCNE modifications resulted in slightly more and less negative ΔV th , respectively, when the side chain polystyrene was not in contact with the pentacene and isolated from the gate electrode. The results indicate a likely maximum combination of molecular charge stabilizing activity and side chain concentration that still allows gate dielectric function.

36 MATERIALS SCIENCE↗

DOE OSTI2025

Travelling wave‐based fault detection and location in a real low‐voltage DC microgrid

Abstract This paper discusses a device‐level implementation of a travelling wave (TW) protection device (PD) designed for a real low‐voltage DC microgrid. The TWPD fault detection and location algorithm is executed on a commercial digital signal processor (DSP) board, involving signal sampling at 1 MHz via the DSP board's analog‐to‐digital converter (ADC). The analogue input card measures positive pole, negative pole and pole‐to‐pole voltages at the TWPD location. Upon a successful fault detection using a second‐order high‐pass filter, the voltage data is normalised and multi‐resolution analysis (MRA) is performed on a 128‐sample buffer around the TW arrival time. MRA employs the discrete wavelet transform (DWT) to capture high‐frequency voltage patterns, and then the Parseval's energy theorem quantifies these TW characteristics by computing the energy of reconstructed wavelet coefficients. These energy values per decomposed frequency band are the basis for training a random forest classifier that predicts fault location and type. The TWPD is fully implemented and connected to a real DC microgrid in Albuquerque, NM, USA, for validation, and results are shown for field tests verifying the performance under faults.

Paruthiyil, Sajay Krishnan [Department of Electric↗

DOE OSTI2023

Unfolder-based single-stage AC-AC conversion system

An power converter includes an unfolder connected to a three-phase source and has an output connection with a positive terminal, a negative terminal and a neutral terminal. The unfolder creates two unipolar piece-wise sinusoidal DC voltage waveforms offset by a half of a period. A three-input converter connected to the unfolder produces a quasi-sinusoidal output voltage across output terminals. Switches of the converter selectively connect the positive, negative and neutral inputs across the output terminals. A PWM controller controls a first duty ratio and a second duty ratio for the converter based on a phase angle of the source and a modulation index generated from an error signal related to a control variable. The duty ratios are time varying with a fundamental frequency of the source. The modulation index relates to output voltage of the converter, peak voltage or current of the source and/or peak current at the output terminals.

Teeneti, Chakridhar Reddy↗

DOE OSTI2021

Electrochemical Degradation Modes in Bifacial Silicon Photovoltaic Modules

Motivated by the rapidly rising deployment of bifacial monocrystalline-silicon photovoltaics (PV), we investigate the durability of various PV module packaging configurations with transparent coverings on both the front and rear sides of the module. We use a series of bifacial passivated emitter and rear cell (p-PERC) mini-modules with systematically varying outer cover materials (glass/glass, G/G, or glass/transparent backsheet, G/TB) and encapsulant chemistries (poly [ethylene-co-vinyl acetate], EVA; or polyolefin, POE). We study degradation modes over 1,000 hours of combined damp heat (DH) exposure and high system voltages that can cause potential-induced degradation (PID) under positive, zero, or negative 1,000 V cell-to-frame bias. We analyze the degradation modes using a combination of current-voltage measurements, impedance spectroscopy, external quantum efficiency, and spatially resolved luminescence and thermal imaging. Our results highlight various types of degradation including shunting, enhanced recombination, and series resistance increases, and we use spatially resolved characterization to separately identify the localized effects. We show that multiple PID and moisture-ingress degradation modes severely affect EVA-containing modules, with previously reported PID processes under negative-bias DH and a unique observation of rear-side surface recombination in G/EVA/G modules under positive-bias DH. We observe significantly less degradation in POE-containing modules, where the G/POE/G configuration exhibits minimal degradation under all stress conditions that we employ.

14 SOLAR ENERGY↗

DOE OSTI2023

The Regenerative Current Mirror: A Very Low Power Front-End Amplifier for Silicon Pixel Detectors

In pixelized detectors, reducing power consumption in the front- end ASIC chips becomes a crucial demand. Optimization based on mature pre-amplifier schemes today is unlikely to bring sufficient improvements. A new CMOS front-end gain stage topology with very low power consumption called regenerative current mirror is developed to fulfill the demand. The circuit takes advantage of high-speed performance of current amplification while operating with relatively low bias current. The regenerative current mirror uses a NMOS current mirror and a PMOS current mirror, both with nominal gain of 1, to form a loop-back topology that provides a positive feedback. An NMOS FET with an external adjustable voltage applied to it gate terminal is used to limit open loop gain of the current mirrors to be slightly lower than 1. This yields a net gain of the positive feedback loop to be much larger than 1 while operating the current mirrors under relatively low bias currents. Simulation shows that in 65 nm fabrication process, the power consumption of the gain stages suitable for silicon pixel detectors can be controlled < 10 micro-Watts per channel. Another novel low-power circuit called Pseudo-Thyristor presented in another document will replace traditional discriminator and the Regenerative Current Mirror plus Pseudo- Thyristor will provide a full solution for the silicon pixel low-power frontend ASIC.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗