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61 records · Page 4

Formation Pathway of Wurtzite-like Cu 2 ZnSnSe 4 Nanocrystals

Cu 2 ZnSnSe 4 is a direct band gap semiconductor composed of Earth-abundant elements, making it an attractive material for thin film photovoltaic technologies. Cu 2 ZnSnSe 4 crystallizes in the kesterite structure type as a bulk material, but it can also crystallize in a metastable wurtzite-like crystal structure when synthesized on the nanoscale. The wurtzite-like polymorph introduces unique and useful properties to Cu 2 ZnSnSe 4 materials, including widely tunable band gaps and superior composi-tional flexibility as compared to kesterite Cu 2 ZnSnSe 4 . Here, we investigate the formation pathway of colloidally prepared wurtzite-like Cu 2 ZnSnSe 4 nanocrystals. We show that this quaternary material forms through a chain of reactions, starting with binary Cu 3 Se 2 nanocrystals that, due to both kinetic and thermodynamic reasons, preferentially react with tin to yield hexagonal copper tin selenide intermediates. Furthermore, these ternary intermediates then react with zinc to form the resulting wurtzite-like Cu 2 ZnSnSe 4 nanocrystals. Based on this formation pathway, we suggest synthetic methods that may prevent the for-mation of unwanted impurity phases that are known to hamper the efficiency of Cu 2 ZnSnSe 4 -based optoelectronic devices.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Compressibility Studies of Copper Selenides Obtained by Cation Exchange Reaction Revealing the New CsCl Phase

In this study, we conducted a high-pressure investigation of Cu 2-x Se nanostructures with pyramid- and plate-like morphologies, created through cation exchange from zinc-blende CdSe nanocrystals and wurtzite CdSe nanoplatelets respectively. Using a diamond anvil cell setup at the APS synchrotron, we observed the phase transitions in the Cu 2-x Se nanostructures up to 40 GPa, identifying a novel CsCl-type lattice with Pm-3m symmetry above 4 GPa. This CsCl-type structure, previously unreported in copper selenides, was partially retained after decompression. Our results indicate that the initial crystalline structure of CdSe does not affect the stability of Cu 2-x Se nanostructures formed via cation exchange. Both morphologies of Cu 2-x Se sintered under compression, potentially contributing to the stabilization of the high-pressure phase through interfacial defects. These findings are significant for discovering new phases with potential applications in future technologies.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Quantum Dot Based Solid-State Radiation Detectors

The detection and accurate identification of nuclear material is critical to the advancement of national security, medical technology, and environmental prosperity. The gold standard solid-state detector HPGe, suffers from high manufacturing costs and the need to operate at cryogenic temperatures to ensure reliable energy resolution. The other most common solid-state detector, cadmium zinc telluride (CZT), has the ability to operate at room temperature, but the grow process results in impurities decreasing performance. In this paper we have developed a continuous flow synthesis able to mass produce targeted size cadmium selenide quantum dots. The implementation of these QDs in QD/MEH-PPV composites has the ability to rival HPGe energy resolution at room temperature.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

Novel Materials, Processing and Device Technologies for Space Exploration with Potential Dual-Use Applications

We highlight results of a broad spectrum of efforts on lower-temperature processing of nanomaterials, novel approaches to energy conversion, and environmentally rugged devices. Solution-processed quantum dots of copper indium chalcogenide semiconductors and multiwalled carbon nanotubes from lower-temperature spray pyrolysis are enabled by novel (precursor) chemistry. Metal-doped zinc oxide (ZnO) nanostructured components of photovoltaic cells have been grown in solution at low temperature on a conductive indium tin oxide substrate. Arrays of ZnO nanorods can be templated and decorated with various semiconductor and metallic nanoparticles. Utilizing ZnO in a more broadly defined energy conversion sense as photocatalysts, unwanted organic waste materials can potentially be repurposed. Current efforts on charge carrier dynamics in nanoscale electrode architectures used in photoelectrochemical cells for generating solar electricity and fuels are described. The objective is to develop oxide nanowire-based electrode architectures that exhibit improved charge separation, charge collection and allow for efficient light absorption. Investigation of the charge carrier transport and recombination properties of the electrodes will aid in the understanding of how nanowire architectures improve performance of electrodes for dye-sensitized solar cells. Nanomaterials can be incorporated in a number of advanced higher-performance (i.e. mass specific power) photovoltaic arrays. Advanced technologies for the deposition of 4H-silicon carbide are described. The use of novel precursors, advanced processing, and process studies, including modeling are discussed from the perspective of enhancing the performance of this promising material for enabling technologies such as solar electric propulsion. Potential impact(s) of these technologies for a variety of aerospace applications are highlighted throughout. Finally, examples are given of technologies with potential spin-offs for dual-use or terrestrial applications.

solid state devices↗

Robust passivation of CdSeTe based solar cells using reactively sputtered magnesium zinc oxide

Magnesium zinc oxide (MZO, Mg x Zn 1-x O) is a leading emitter for CdTe-based solar cells due to its transparency and the ability to tune its conduction band offset with the absorber. Devices employing alloyed cadmium selenide telluride (CST, CdSe y Te 1-y ) absorbers achieved high efficiency (>19%) using MZO deposited by reactive sputtering over a broad composition range (3.68–3.92 eV, x: 0.20–0.35). Minimal differences in implied and measured open circuit voltage indicate that the contacts are well passivated and highly selective across the spectrum of MZO employed. Device performance insensitivity to MZO composition, which is not observed in CdTe devices, is attributed to the formation of an oxygenated interface layer. Se volatility creates a group VI deficiency at the interface that drives O migration from the MZO into the absorber. This introduces conductivity in the emitter not present in its as-deposited state, contributing to the exceptional performance observed. It is shown that the quality of device passivation depends on the oxidation state of the as-deposited MZO such that intelligent control and management of the reactive sputtering process is required.

36 MATERIALS SCIENCE↗

Revealing the Surface Structure of CdSe Nanocrystals by Dynamic Nuclear Polarization-Enhanced 77 Se and 113 Cd Solid-State NMR Spectroscopy

Dynamic nuclear polarization (DNP) solid-state NMR (SSNMR) spectroscopy was used to obtain detailed surface structures of zinc blende CdSe nanocrystals (NCs) with plate or spheroidal morphologies which are capped by carboxylic acid ligands. 1D 113 Cd and 77 Se cross-polarization magic angle spinning (CPMAS) NMR spectra revealed distinct signals from Cd and Se atoms on the surface of the NCs, and those residing in bulk-like environments, below the surface. 113 Cd cross-polarization magic-angle-turning (CP-MAT) experiments identified CdSe 3 O, CdSe 2 O 2 , and CdSeO 3 Cd coordination environments on the surface of the NCs, where the oxygen atoms are presumably from coordinated carboxylate ligands. The sensitivity gain from DNP enabled natural isotopic abundance 2D homonuclear 113 Cd– 113 Cd and 77 Se– 77 Se and heteronuclear 113 Cd– 77 Se scalar correlation solid-state NMR experiments which revealed the connectivity of the Cd and Se atoms. Importantly, 77 Se{ 113 Cd} scalar heteronuclear multiple quantum coherence ( J -HMQC) experiments were used to selectively measure one-bond 77 Se– 113 Cd scalar coupling constants ( 1 J ( 77 Se, 113 Cd)). With knowledge of 1 J ( 77 Se, 113 Cd), heteronuclear 77 Se{ 113 Cd} spin echo ( J -resolved) NMR experiments were used to determine the number of Cd atoms bonded to Se atoms and vice versa. Furthermore, the J -resolved experiments directly confirmed that major Cd and Se surface species have CdSe 2 O 2 and SeCd 4 stoichiometries, respectively. Considering the crystal structure of zinc blende CdSe and the similarity of the solid-state NMR data for the platelets and spheroids, we conclude that the surface of the spheroidal CdSe NCs is primarily composed of {100} facets. The methods outlined here will generally be applicable to obtain detailed surface structures of various main group semiconductor nanoparticles.

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