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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 73 records · Page 4
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

Quantifying lithium loss in amorphous silicon thin-film anodes via titration-gas chromatography

Silicon with a high theoretical capacity (3,579 mAh/g) is a promising anode candidate for lithium-ion batteries. However, commercialization is still impeded by low Coulombic efficiency, caused by solid electrolyte interphase (SEI) formation and trapped lithium (Li)-silicon (Si) alloy during repeated volume change. Quantifying capacity losses from each factor is crucial to formulate rational design strategies for further improvement. In this work, titration-gas chromatography and cryogenic transmission electron microscopy are applied to characterize the evolution of trapped Li-Si alloy and SEI growth in a silicon thin-film anode. It is found that continuous growth of the SEI is the dominant factor for lithium inventory loss during cycling, with only a marginal increase in trapped Li-Si alloy. This study offers a quantitative approach to differentiate Li in the SEI from trapped Li in Li-Si alloy through a silicon thin-film anode, providing unique insights into identifying critical bottlenecks for developing Si anodes.

25 ENERGY STORAGE↗
NASA NTRS1985

Plasma Deposition of Doped Amorphous Silicon

Pair of reports present further experimental details of investigation of plasma deposition of films of phosphorous-doped amosphous silicon. Probe measurements of electrical resistance of deposited films indicated films not uniform. In general, it appeared that resistance decreased with film thickness.

Calcote, H. F.↗
NASA NTRS1985

Accelerated stress testing of amorphous silicon solar cells

A technique for performing accelerated stress tests of large-area thin a-Si solar cells is presented. A computer-controlled short-interval test system employing low-cost ac-powered ELH illumination and a simulated a-Si reference cell (seven individually bandpass-filtered zero-biased crystalline PIN photodiodes) calibrated to the response of an a-Si control cell is described and illustrated with flow diagrams, drawings, and graphs. Preliminary results indicate that while most tests of a program developed for c-Si cells are applicable to a-Si cells, spurious degradation may appear in a-Si cells tested at temperatures above 130 C.

Stoddard, W. G.↗
NASA NTRS1987

Amorphous silicon deposition diagnostics using coherent anti-Stokes Raman spectroscopy

This paper reports on an in situ silicon deposition process diagnostics, using CARS performed at state-of-the-art a-Si:H film deposition conditions in a reactor designed for a-Si:H solar cell fabrication. The diagnostics procedure measures the silane depletion in an RF plasma as a function of the silane flow rate (where the relationship is linear between 50-percent depletion, at a flow rate of 5.6 sccm, and about 8-percent depletion, at 80 sccm) and the RF power (where the silane depletion is linearly dependent on the RF power in the region of 4 to 12 W). The linear RF power dependence of the silane depletion is considered to be consistent with the mechanism of silane decomposition primarily by electron impact dissociations, while the flow rate dependence is interpreted in terms of the residence time of the SiH4 molecules in the glow discharge region, where an increase of the residence time at a low flow rate results in a high depletion ratio.

Shing, Y. H.↗
NASA NTRS1991

Annealing characteristics of irradiated hydrogenated amorphous silicon solar cells

It was shown that 1 MeV proton irradiation with fluences of 1.25E14 and 1.25E15/sq cm reduces the normalized I(sub SC) of a-Si:H solar cell. Solar cells recently fabricated showed superior radiation tolerance compared with cells fabricated four years ago; the improvement is probably due to the fact that the new cells are thinner and fabricated from improved materials. Room temperature annealing was observed for the first time in both new and old cells. New cells anneal at a faster rate than old cells for the same fluence. From the annealing work it is apparent that there are at least two types of defects and/or annealing mechanisms. One cell had improved I-V characteristics following irradiation as compared to the virgin cell. The work shows that the photothermal deflection spectroscopy (PDS) and annealing measurements may be used to predict the qualitative behavior of a-Si:H solar cells. It was anticipated that the modeling work will quantitatively link thin film measurements with solar cell properties. Quantitative predictions of the operation of a-Si:H solar cells in a space environment will require a knowledge of the defect creation mechanisms, defect structures, role of defects on degradation, and defect passivation and annealing mechanisms. The engineering data and knowledge base for justifying space flight testing of a-Si:H alloy based solar cells is being developed.

Payson, J. S.↗
NASA NTRS1990

A model for the spectral dependence of optically induced absorption in amorphous silicon

A model based on transitions from localized band tail states to states above the mobility edge is used to explain the broad band induced absorptions observed in recent pump-probe experiments. The model gives the observed decrease of absorption with frequency at subband gap photo energies and high carrier densities (of about 10 to the 20th/cu cm). At lower carrier densities, the absorption has a maximun which is sensitive to the spatial extent of the band tail states.

Lawandy, N. M.↗
NASA NTRS1990

1.00 MeV proton radiation resistance studies of single-junction and single gap dual-junction amorphous-silicon alloy solar cells

A comparative study of the radiation resistance of a-Si:H and a-SiGe:H single-junction and a-Si:H dual-junction solar cells was conducted. The cells were irradiated with 1.00-MeV protons with fluences of 1.0 x 10 to the 14th, 5.0 x 10 to the 14th and 1.0 x 10 to the 15th/sq cm and characterized using I-V and quantum efficiency measurements. The radiation resistance of single-junction cells cannot be used to explain the behavior of dual-junction cells at a fluence of 1.0 x 10 to the 15th/sq cm. The a-Si H single-junction cells degraded the least of the three cells; a-SiGe:H single-junction cells showed the largest reduction in short-circuit current, while a-Si:H dual-junction cells exhibited the largest degradation in the open-circuit voltage. The quantum efficiency of the cells degraded more in the red part of the spectrum; the bottom junction degrades first in dual-junction cells.

Abdulaziz, Salman↗
NASA NTRS1991

Growth and properties of amorphous silicon films grown using pulsed-flow reactive plasma beam epitaxy

The growth and properties of a-Si:H films grown using a novel deposition technique, reactive plasma beam epitaxy, are discussed. In this technique, a remote H plasma produced in a microwave-ECR reactor is used to grow a-Si:H films at low pressures. The H ions react with SiH4 introduced near the substrate to produce the film. The flow of SiH4 is pulsed on or off, thereby achieving in-situ annealing of the film during growth by H ions and radicals. The films produced by this technique appear to have good electronic quality, and are more stable than the standard glow discharge films.

Dalal, Vikram L.↗
NASA NTRS1993

Polyimide based amorphous silicon solar modules

Requirements for space power are increasingly emphasizing lower costs and higher specific powers. This results from new fiscal constraints, higher power requirements for larger applications, and the evolution toward longer distance missions such as a Lunar or Mars base. The polyimide based a-Si modules described are being developed to meet these needs. The modules consist of tandem a-Si solar cell material deposited directly on a roll of polyimide. A laser scribing/printing process subdivides the deposition into discrete cell strips which are series connected to produce the required voltage without cutting the polymer backing. The result is a large, monolithic, blanket type module approximately 30 cm wide and variable in length depending on demand. Current production modules have a specific power slightly over 500 W/Kg with room for significant improvement. Costs for the full blanket modules range from $30/Watt to $150/Watt depending on quantity and engineering requirements. Work to date focused on the modules themselves and adjusting them for the AMO spectrum. Work is needed yet to insure that the modules are suitable for the space environment.

Jeffrey, Frank R.↗
NASA NTRS1983

Interfacial electrical properties of ion-beam sputter deposited amorphous carbon on silicon

Amorphous, 'diamond-like' carbon films have been deposited on Si substrates, using ion-beam sputtering. The interfacial properties are studied using capacitance and conductance measurements. Data are analyzed using existing theories for interfacial electrical properties. The density of electronic states at the interface, along with corresponding time constants are determined.

Khan, A. A.↗
NASA NTRS2006

Paper-Thin Plastic Film Soaks Up Sun to Create Solar Energy

A non-crystallized silicon known as amorphous silicon is the semiconductor material most frequently chosen for deposition, because it is a strong absorber of light. According to the U.S. Department of Energy, amorphous silicon absorbs solar radiation 40 times more efficiently than single-crystal silicon, and a thin film only about 1-micrometer (one one-millionth of a meter) thick containing amorphous silicon can absorb 90 percent of the usable light energy shining on it. Peak efficiency and significant reduction in the use of semiconductor and thin film materials translate directly into time and money savings for manufacturers. Thanks in part to NASA, thin film solar cells derived from amorphous silicon are gaining more and more attention in a market that has otherwise been dominated by mono- and poly-crystalline silicon cells for years. At Glenn Research Center, the Photovoltaic & Space Environments Branch conducts research focused on developing this type of thin film solar cell for space applications. Placing solar cells on thin film materials provides NASA with an attractively priced solution to fabricating other types of solar cells, given that thin film solar cells require significantly less semiconductor material to generate power. Using the super-lightweight solar materials also affords NASA the opportunity to cut down on payload weight during vehicle launches, as well as the weight of spacecraft being sent into orbit.

Source record↗
NASA NTRS1988

Lunar production of space photovoltaic arrays

The advantages of manufacturing solar cells for use in space on the moon rather than on Earth are discussed. It is shown how solar cells manufactured on the moon could significantly reduce the cost of transportation of power systems to space destinations, including the moon, Mars, earth orbit, and transfer orbits. Silicon is abundant on the moon, and refining processes are demonstrated which do not depend on extensive use of reactants imported from Earth. Because of the lower requirements for refined silicon, the amorphous silicon process is preferred, despite lower efficiencies. Calculations show that the specific power of amorphous silicon cells can be adequate for most uses.

Landis, Geoffrey A.↗
NASA NTRS1989

Lunar production of solar cells

The feasibility of manufacturing of solar cells on the moon for spacecraft applications is examined. Because of the much lower escape velocity, there is a great advantage in lunar manufacture of solar cells compared to Earth manufacture. Silicon is abundant on the moon, and new refining methods allow it to be reduced and purified without extensive reliance on materials unavailable on the moon. Silicon and amorphous silicon solar cells could be manufactured on the moon for use in space. Concepts for the production of a baseline amorphous silicon cell are discussed, and specific power levels are calculated for cells designed for both lunar and Earth manufacture.

Landis, Geoffrey A.↗
DOE OSTI2023

Degradation-related defect level in weathered silicon heterojunction modules characterized by deep level transient spectroscopy

Commercial silicon heterojunction photovoltaic modules, known as amorphous-silicon-based heterojunction with intrinsic thin-film layer (HIT) modules, show average degradation after 10 years in the field. HIT modules weathered outdoors in Colorado and Florida display mostly uniform decreases in intensity when mapped with photoluminescence (PL) imaging compared to a control module. Flash-table-based current-voltage curves show that degradation is dominated by voltage loss. Samples are cored from each of the modules, and deep level transient spectroscopy (DLTS) detects three electron-trap defect states in all modules with activation energies of electron emission from the defects of 0.07, 0.16, and 0.50 eV. DLTS measurements on the weathered modules show an additional deep-level, electron-trap defect state with an activation energy of 0.51 eV and a trap density of approximately 10 12 cm –3 . The capture rate is measured using varying short filling pulse times, and the resulting capture cross section is estimated to be 1.1x10 –16 cm 2 . The development of the weathering-related defect level correlates to decreases in carrier lifetime, PL intensity, and module voltage. Various depths of the space charge region are probed with increments in applied reverse bias and filling-pulse bias. Furthermore, this DLTS depth profiling shows a trend of trap density increasing with less applied reverse bias, suggesting that the weathering-related defect increases carrier recombination toward the interface between the bulk silicon wafer and the junction-forming amorphous-silicon passivation layers.

14 SOLAR ENERGY↗
NASA NTRS1992

Design and optimization of a self-deploying single axis tracking PV array

This study was performed in order to design a tracking photovoltaic (PV) array and optimize the design for maximum specific power. The design considerations were minimal deployment time, high reliability, and small stowage volume. The array design was self-deployable, from a compact stowage configuration, using a passive pressurized gas deployment mechanism. The array structural components consist of a combination of beams, columns, and cables used to deploy and orient a flexible PV blanket. Each structural component of the design was analyzed to determine the size necessary to withstand the various forces to which it would be subjected. An optimization was performed to determine the array dimensions and blanket geometry which produce the maximum specific power. The optimization was performed for both lunar and Martian environments with 4 types of PV blankets (silicon, GaAs/Ge, GaAs CLEFT, and amorphous silicon). For the lunar environment, the amorphous silicon array produced the highest specific power, whereas, for Mars the GaAs CLEFT array produced the highest specific power. A comparison was made to a fixed PV tent array of similar design. The tracking array produced a higher specific power with all types of the PV blankets examined except amorphous silicon at both locations.

Colozza, Anthony J.↗
NASA NTRS1992

Design and optimization of a self-deploying single axis tracking PV array

This study was performed in order to design a tracking photovoltaic (PV) array and optimize the design for maximum specific power. The design considerations were minimal deployment time, high reliability, and small stowage volume. The array design was self-deployable, from a compact stowage configuration, using a passive pressurized gas deployment mechanism. The array structural components consist of a combination of beams, columns, and cables used to deploy and orient a flexible PV blanket. Each structural component of the design was analyzer to determine the size necessary to withstand the various forces to which it would be subjected. An optimization was performed to determine the array dimensions and blanket geometry which produce the maximum specific power. The optimization was performed for both lunar and Martian environments with 4 types of PV blankets (silicon, GaAs/Ge, GaAs CLEFT, and amorphous Silicon). For the lunar environment, the amorphous silicon array produced the highest specific power, whereas, for Mars the GaAs CLEFT array produced the highest specific power. A comparison was made to a fixed PV tent array of similar design. The tracking array produced a higher specific power with all types of the PV blankets examined except amorphous silicon at both locations.

Colozza, Anthony J.↗