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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 73 records · Page 4

Atomically dispersed Ag on δ-MnO 2 via cation vacancy trapping for toluene catalytic oxidation

The regulation of metal–support interaction (MSI) and the improvement of noble metal utilization are the frontiers of volatile organic compound (VOC) catalytic oxidation. Here, we report a H 2 O 2 -assisted synthesis process for trapping Ag + onto the engineered Mn vacancies of δ-MnO 2 for the catalytic oxidation of toluene. Due to the strong MSI between Ag and δ-MnO 2 , the monoatomic Ag + anchored on cation vacancies forms longer and weakened Ag–O bonds compared with Ag 2 O, which can extra promote the formation of oxygen vacancies and the activation of adjacent lattice oxygen in Ag–O–Mn units compared with regular nanoparticle counterparts. It is beneficial to the steps of methyl dehydrogenation, demethylation, and benzene ring cleavage. The catalyst yields excellent toluene oxidation activity, enhanced turnover frequency in terms of Ag, and good stability. Finally, we propose in this study a facile design strategy for fabricating stably atomically dispersed metal sites, as well as clarify the structure–activity relationships during toluene catalytic oxidation, especially the important effect of single-atom Ag on the adjacent local structure.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Elongated Fullerene Unlocks Oxygen-Resistant Perovskite Solar Minimodules

State-of-the-art encapsulation cannot prevent the permeation of oxygen into perovskite solar cells (PSCs). Here, we report the finding that p-i-n structured PSCs degrade quickly under oxygen exposure. Oxidation of C60, rather than perovskites, dominates the degradation. Chemical absorption of oxygen by C60 is identified, which impairs its electron transport property. We modify the electron transport layers to address the instability under oxygen exposure. The elongated fullerene C70 is found to react with oxygen orders of magnitude slower than C60. In combination with a compact SnO2 buffer fabricated by atomic layer deposition, which can slow down the oxygen diffusion, the resulting unencapsulated PSCs with C70 retained 90% of their initial efficiency after 1-sun illumination in pure oxygen for 1,200 h at 70 degrees C, improving stability by hundreds of times. Testing of unencapsulated perovskite minimodules of different perovskite compositions with C70 gives extrapolated lifetimes of 17-41 years at 50 degrees C.

14 SOLAR ENERGY↗

Probing Electron Beam Induced Transformations on a Single-Defect Level via Automated Scanning Transmission Electron Microscopy

A robust approach for real-time analysis of the scanning transmission electron microscopy (STEM) data streams, based on ensemble learning and iterative training (ELIT) of deep convolutional neural networks, is implemented on an operational microscope, enabling the exploration of the dynamics of specific atomic configurations under electron beam irradiation via an automated experiment in STEM. Combined with beam control, this approach allows studying beam effects on selected atomic groups and chemical bonds in a fully automated mode. Here, in this study, we demonstrate atomically precise engineering of single vacancy lines in transition metal dichalcogenides and the creation and identification of topological defects in graphene. The ELIT-based approach facilitates direct on-the-fly analysis of the STEM data and engenders real-time feedback schemes for probing electron beam chemistry, atomic manipulation, and atom by atom assembly.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Automated Construction of Artificial Lattice Structures with Designer Electronic States

Manipulating matter with a scanning tunneling microscope (STM) enables the creation of atomically defined artificial structures that host designer quantum states. However, the time-consuming nature of the manipulation process, coupled with the sensitivity of the STM tip, constrains the exploration of diverse configurations and limits the size of the designed features. In this study, we present a reinforcement learning (RL)-based framework for creating artificial structures by spatially manipulating carbon monoxide (CO) molecules on a copper substrate by using the STM tip. The automated workflow combines molecule detection and manipulation, employing deep-learning-based object detection to locate CO molecules and linear assignment algorithms to allocate these molecules to designated target sites. We initially perform molecule maneuvering based on randomized parameter sampling for sample bias, tunneling current set point, and manipulation speed. This data set is then structured into an action trajectory used to train an RL agent. The model is subsequently deployed on the STM for real-time fine-tuning of the manipulation parameters during structure construction. Our approach incorporates path-planning protocols coupled with active drift compensation to enable atomically precise fabrication of structures with significantly reduced human input while realizing larger-scale artificial lattices with the desired electronic properties. Furthermore, using our approach, we demonstrate the automated construction of an extended artificial graphene lattice and confirm the existence of a characteristic Dirac point in its electronic structure. Further challenges regarding the RL-based structural assembly scalability are discussed.

Algorithms↗

Nanometer-thick ultraflat cantilever resonators

Nanomechanical devices made from ultrathin materials are transforming diverse fields, including sensing, signal processing, and quantum technologies. However, as these materials become thinner, their low bending rigidity poses significant fabrication challenges, and achieving nanometer-thick flat cantilevers with consistent and predictable mechanical responses has remained elusive despite decades of research. Here we present nanometer-thick, ultraflat cantilever resonators fabricated using atomic layer deposition. By effectively mitigating the effects of uncontrollable built-in strain and geometric disorder, the ultraflat nanocantilevers exhibit resonance frequencies closely aligned with thin-plate theory predictions and display low sample-to-sample variability. These cantilevers maintain mechanical stability in both vacuum and air environments, even at large length-to-thickness ratios of up to 3000. The ultraflat nanocantilevers are approaching the thickness limit, beyond which thermal fluctuations at room temperature can spontaneously induce random ripples in otherwise flat films.

nanofabrication↗

Effect of interfacial structures on phonon transport across atomically precise Si/Al heterojunctions

Phonons are important carriers of energy and information in many cryogenic devices used for quantum information science and in fundamental physics experiments such as dark matter detectors. In these systems phonon behavior can be dominated by interfaces, hence there is increasing demand for a more detailed understanding of interfacial phonon transport in relevant material systems. Previous studies have focused on understanding thermal transport over the entire phonon spectrum at and above room temperature. At ultra-low temperatures, however, knowledge is missing regarding athermal phonon behavior due to the challenge in modeling the extreme conditions in micro-scale, heterogeneous cryogenic systems, as well as extracting single-phonon information from a large ensemble. In this work, we delineate interfacial phonon transport using a combination of classical molecular dynamics (MD) and phonon wave packet simulations, to illustrate the consistency and differences between the ensemble- and single-phonon dynamics. We consider three single-crystal Si surface reconstructions --- (1×1), (v3×v3) and (7×7) --- and model both experimentally observed Si(1×1)/Al interfaces and hypothesized Si(v3×v3)/Al and Si(7×7)/Al interfaces. The overall interfacial thermal conductance calculated from non-equilibrium MD shows that for the Si(1×1)/Al system, the presence of Al twin grain boundaries can hinder phonon transport and reduce thermal conductance by 2--12% relative to single-crystal Al; whereas the Si (v3×v3) and (7×7) reconstructions can enhance it by 6--19%. Normal mode decomposition reveals that both the increase and decrease in conductance are related to inelastic phonon scattering. Single-phonon wave packet simulations show results consistent with NEMD, while further suggesting that phonon polarization conversion is significant even when elastic transmission dominates, and that the interfacial structures have anisotropic impacts on atomic vibrations along different lattice directions. Our findings suggest alternative perspectives in achieving selective phonon transport through controlling interfacial structures of materials with atomically-precise fabrication techniques, and that the phonon wave packet formalism is a potentially powerful method for developing a detailed understanding of non-equilibrium phenomena in the low-temperature limit.

Lu, Zexi↗

Aluminum Oxide Passivating Tunneling Interlayers for Molybdenum Oxide Hole-Selective Contacts

Aluminum oxide thin films fabricated via atomic layer deposition are introduced as passivating tunneling interlayers between hole-selective molybdenum oxide contacts and silicon absorbers. Surface recombination velocity and specific contact resistivity are reported as a function of Al 2 O 3 thickness. The effects of substrate chemical pretreatment, the thermal history of the Al 2 O 3 layers prior to MoOx deposition, and the thermal history of the completed Al 2 O 3 /MoO x stacks were also investigated. When an SiO x /Al 2 O 3 passivating stack was incorporated and the completed test structure was annealed at 200 °C, the observed recombination velocities were reduced from ~10 000 cm/s for an unpassivated (initially hydrogen-terminated) Si/MoO x direct contact to ~500 cm/s, while maintaining a contact resistivity at or below 0.1 Ω·cm 2 . Finally, the data demonstrate the capability of ultrathin Al 2 O 3 to improve Si/MoO x contact properties and may be of interest in the design of future Si heterojunctions.

14 SOLAR ENERGY↗

Support for the 65th International Conference on Electron, Ion, and Photon Beam Technologies and Nanofabrication

This project aimed to enable student participation in the 65th International Conference on Electron, Ion, and Photon Beam Technologies and Nanofabrication (EIPBN). EIPBN, affectionately known as “3-Beams,” is the premier gathering of scientists and engineers who are dedicated to electron, ion and photon lithography, imaging, and analysis; nanofabrication process technologies; atomically precise fabrication; related emerging technologies; and their applications in a broad spectrum of fields. It is where top researchers from academia, government laboratories, and industries from around the world meet to present and discuss recent trends and future innovations in these technologies. The goal of the conference is to advance knowledge by enabling the exchange of information concerning advanced and emerging nanofabrication and nanomanufacturing topics and how they enable traditional and novel applications.

36 MATERIALS SCIENCE↗

Support for the 66th International Conference on Electron, Ion, and Photon Beam Technologies and Nanofabrication (Final Report)

This project aimed to enable student participation in the 66th International Conference on Electron, Ion, and Photon Beam Technologies and Nanofabrication (EIPBN). EIPBN, affectionately known as “3-Beams,” is the premier gathering of scientists and engineers who are dedicated to electron, ion and photon lithography, imaging, and analysis; nanofabrication process technologies; atomically precise fabrication; related emerging technologies; and their applications in a broad spectrum of fields. It is where top researchers from academia, government laboratories, and industries from around the world meet to present and discuss recent trends and future innovations in these technologies. The goal of the conference is to advance knowledge by enabling the exchange of information concerning advanced and emerging nanofabrication and nanomanufacturing topics and how they enable traditional and novel applications.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

Development of Powder Production Methods for Advanced LEU Fuel Concepts

A set of novel fuel concepts has been proposed for use in advanced low-enriched uranium (LEU) systems that utilize powder metallurgical methods for fabrication of the fuel forms. Preliminary tests demonstrated the ability to produce powder but did not yield the desired quality to be used as feedstock in these applications. This study seeks to establish an improved powder production method for uranium-based alloys and evaluate the parameters required to refine the particles produced by size and morphology. Powder samples were fabricated via atomization and analyzed for particle morphology utilizing sieving methods and scanning electron microscopy (SEM). Surrogate testing displayed improved performance in producing small (<250 µm) spherical particles, and initial tests demonstrated the initial capability to atomize uranium. Further work is required to refine the atomization process to produce high quality uranium microspheres.

11 - NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗

Mass loss of shuttle space suit orthofabric under simulated ionospheric atomic oxygen bombardment

Many polymeric materials used for thermal protection and insulation on spacecraft degrade significantly under prolonged bombardment by ionospheric atomic oxygen. The covering fabric of the multilayered shuttle space suit is composed of a loose weave of GORE-TEX fibers, Nomex and Kevlar-29, which are all polymeric materials. The complete evaluation of suit fabric degradation from ionospheric atomic oxygen is of importance in reevaluating suit lifetime and inspection procedures. The mass loss and visible physical changes of each test sample was determined. Kapton control samples and data from previous asher and flight tests were used to scale the results to reflect ionospheric conditions at about 220 km altitude. It is predicted that the orthofabric loses mass in the ionosphere at a rate of about 66% of the original orthofabric mass/yr. The outer layer of the two-layer orthofabric test samples shows few easily visible signs of degradation, even when observed at 440X. It is concluded that the orthofabric could suffer significant loss of performance after much less than a year of total exposure time, while the degradation might be undetectable in post flight visual examinations of space suits.

Miller, W. L.↗

A Study of Tungsten-Technetium Alloys

Technetium is a sister element to rhenium and has many properties that are similar to rhenium. It is predicted that technetium will have about the same effects on tungsten as rhenium in regard to increase in workability, lowered ductile to brittle transition temperature, and improved ductility. The objectives of the current work are to recover technetium from fission product wastes at Hanford Atomic Products Operation and reduce to purified metal; prepare W-Tc alloys containing up to 50 atomic% Tc; fabricate the alloy ingots to sheet stock, assessing the effect of technetium on workability; and perform metallurgical and mechanical properties evaluation of the fabricated alloys. Previous reports have described the separation and purification of 800 g of technetium metal powder, melting of technetium and W-Tc alloys, and some initial observation of the alloy material.

Maltz, J. W.↗

A Study of Tungsten-Technetium Alloys

Technetium is a sister element to rhenium and has many properties that are similar to rhenium. It is predicted that technetium will have about the same effects on tungsten as rhenium in regard to increase in workability, lowered ductile to brittle transition temperature, and improved ductility. The objectives of the current work are to recover technetium from fission product wastes at Hanford Atomic Products Operation and reduce to purified metal; prepare W-Tc alloys containing up to 50 atomic% Tc; fabricate the alloy ingots to sheet stock, assessing the effect of technetium on workability; and perform metallurgical and mechanical properties evaluation of the fabricated alloys. Previous reports have described the separation and purification of 800 g of technetium metal powder, melting of technetium and W-Tc alloys, and some initial observation of the alloy material.

Maltz, J. W.↗

Doping Scheme in Atomic Chain Electronics

Due to the dramatic reduction in MOS size, there appear many unwanted effects. In these small devices, the number of dopant atoms in the channel is not macroscopic and electrons may suffer significantly different scattering from device to device since the spatial distribution of dopant atoms is no longer regarded as continuous. This prohibits integration, while it is impossible to control such dopant positions within atomic scale. A fundamental solution is to create electronics with simple but atomically precise structures, which could be fabricated with recent atom manipulation technology. All the constituent atoms are placed as planned, and then the device characteristics are deviation-free, which is mandatory for integration. Atomic chain electronics belongs to this category. Foreign atom chains or arrays form devices, and they are placed on the atomically flat substrate surface. We can design the band structure and the resultant Fermi energy of these structures by manipulating the lattice constant. Using the tight-binding theory with universal parameters, it has been predicted that isolated Si chains and arrays are metallic, Mg chains are insulating, and Mg arrays have metallic and insulating phases [1]. The transport properties along a metallic chain have been studied, emphasizing the role of the contact to electrodes [2]. For electronic applications, it is essential to establish a method to dope a semiconducting chain, which is to control the Fermi energy position without altering the original band structure. If we replace some of the chain atoms with dopant atoms randomly, the electrons will see random potential along die chain and will be localized strongly in space (Anderson localization). However, if we replace periodically, although the electrons can spread over the chain, there will generally appear new bands and band gaps reflecting the new periodicity of dopant atoms. This will change the original band structure significantly. In order to overcome this dilemma, we may place a dopant atom beside the chain at every N lattice periods (N > 1). Because of the periodic arrangement of pant atoms, we can avoid the unwanted Anderson localization. Moreover, since the dopant atoms do not constitute the chain, the overlap interaction between them is minimized, and the band structure modification can be made smallest. Some tight-binding results will be discussed to demonstrate the present idea.

Toshishige, Yamada↗

Development of High Quantum Efficiency UV/Blue Photocathode Epitaxial Semiconductor Heterostructures for Scintillation and Cherenkov Radiation Detection

The primary goal of this research project was to further extend the use of advanced heteroepitaxial-semiconductor crystal growth techniques such as molecular beam epitaxy (MBE) and to demonstrate significant gains in UV/blue photonic detection by designing and fabricating atomically-tailored heteroepitaxial GaAlN/GaInN photocathode device structures. This NASA Explorer technology research program has focused on the development of photocathodes for Cherenkov and scintillation radiation detection. Support from the program allowed us to enhance our MBE system to include a nitrogen plasma source and a magnetic bearing turbomolecular pump for delivery and removal of high purity atomic nitrogen during GaAlN/GaInN film growth. Under this program we have also designed, built and incorporated a cesium activation stage. In addition, a connected UHV chamber with photocathode transfer/positioner components as well as a hybrid phototube stage was designed and built to make in-situ quantum efficiency measurements without ever having to remove the photocathodes from UHV conditions. Thus we have constructed a system with the capability to couple atomically-tailored MBE-grown photocathode heterostructures with real high gain readout devices for single photon detection evaluation.

Leopold, Daniel J.↗

Copper alloys for interconnectors and methods for making the same

Metallic alloy interconnects (which can comprise copper) with low electrical resistivity and methods for making the same are disclosed. The electrical resistivity of thin film copper alloys was reduced by 36% with niobium solute and by 51% with iron solute compared to pure copper counterpart in dilute solute regimes (0-1.5 atomic %). The fabrication method is operated at room temperature, and does not require a high temperature annealing step.

Gianola, Daniel S.↗

Fabrication of ultrathin suspended membranes from atomic layer deposition films

In this report, ultrathin films suspended as freestanding membranes are critical to many microelectronic and materials science applications. However, fabrication methods are currently limited in either their flexibility, due to material selectivity issues during the final membrane release, or their scalability. Here, we demonstrate a novel fabrication process for suspending ultrathin films with thicknesses as low as 4 nm and lateral dimensions up to 20 x 1000 μm from a variety of materials grown by atomic layer deposition. A silicon nitride membrane serves as the support for a sacrificial polymer layer and an ultrathin atomic layer deposition film which, after plasma etching, will form the membrane. The high chemical selectivity between atomic layer deposition-grown transition metal nitrides and oxides and the sacrificial polymer means that ultrathin films of a variety of materials can be released without damage using a single process. Electrically conductive titanium nitride membranes can be produced by this method and are of significant interest for electron microscopy applications. Electron transparency of titanium nitride membranes was found to be ~14% higher than silicon nitride of the same thickness, and of similar conductivity to graphite, meaning that ultrathin, conductive, and electron transparent membranes can be fabricated at scale. These membranes are ideal supports for electron and photon characterization techniques, as well as microelectromechanical system applications that require a conductive membrane.

36 MATERIALS SCIENCE↗