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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 73 records · Page 4
All sourcesNASA NTRSDOE OSTI
DOE OSTI2016

High capacitance density MIS capacitor using Si nanowires by MACE and ALD alumina dielectric

High capacitance density three-dimensional (3D) metal-insulator-semiconductor (MIS) capacitors using Si nanowires (SiNWs) by metal-assisted chemical etching and atomic-layer-deposited alumina dielectric film were fabricated and electrically characterized. A chemical treatment was used to remove structural defects from the nanowire surface, in order to reduce the density of interface traps at the Al{sub 2}O{sub 3}/SiNW interface. SiNWs with two different lengths, namely, 1.3 μm and 2.4 μm, were studied. A four-fold capacitance density increase compared to a planar reference capacitor was achieved with the 1.3 μm SiNWs. In the case of the 2.4 μm SiNWs this increase was ×7, reaching a value of 4.1 μF/cm{sup 2}. Capacitance-voltage (C-V) measurements revealed that, following a two-cycle chemical treatment, frequency dispersion at accumulation regime and flat-band voltage shift disappeared in the case of the 1.3 μm SiNWs, which is indicative of effective removal of structural defects at the SiNW surface. In the case of the 2.4 μm SiNWs, frequency dispersion at accumulation persisted even after the two-step chemical treatment. This is attributed to a porous Si layer at the SiNW tops, which is not effectively removed by the chemical treatment. The electrical losses of MIS capacitors in both cases of SiNW lengths were studied and will be discussed.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2022

Fabrication of ultrathin suspended membranes from atomic layer deposition films

In this report, ultrathin films suspended as freestanding membranes are critical to many microelectronic and materials science applications. However, fabrication methods are currently limited in either their flexibility, due to material selectivity issues during the final membrane release, or their scalability. Here, we demonstrate a novel fabrication process for suspending ultrathin films with thicknesses as low as 4 nm and lateral dimensions up to 20 x 1000 μm from a variety of materials grown by atomic layer deposition. A silicon nitride membrane serves as the support for a sacrificial polymer layer and an ultrathin atomic layer deposition film which, after plasma etching, will form the membrane. The high chemical selectivity between atomic layer deposition-grown transition metal nitrides and oxides and the sacrificial polymer means that ultrathin films of a variety of materials can be released without damage using a single process. Electrically conductive titanium nitride membranes can be produced by this method and are of significant interest for electron microscopy applications. Electron transparency of titanium nitride membranes was found to be ~14% higher than silicon nitride of the same thickness, and of similar conductivity to graphite, meaning that ultrathin, conductive, and electron transparent membranes can be fabricated at scale. These membranes are ideal supports for electron and photon characterization techniques, as well as microelectromechanical system applications that require a conductive membrane.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Controlling Nanoscale Pore Size and Wall Composition in Polycarbonate Membranes via Atomic Layer Deposition and Sequential Infiltration Synthesis: Implications for High Water Permeance

Polymer membranes have a wide variety of applications, ranging from water treatment to energy storage. Many of these applications require precise control over the membrane porosity and surface chemistry. In this study, we explore the modification of isoporous polycarbonate (PC) track-etched membranes (PCTEs) by atomic layer deposition (ALD) and sequential infiltration synthesis (SIS) to tune the pore size and the pore wall surface chemistry. We first performed a detailed study of Al 2 O 3 ALD and SIS in PCTE using a variety of in situ and ex situ measurements. We discovered that short precursor exposure times are critical to achieve conformal Al 2 O 3 ALD in the PCTE nanopores, while longer precursor exposure times resulted in Al 2 O 3 SIS within the bulk of the PC leaving the membranes brittle. Next, we tuned the PCTE pore size via Al 2 O 3 ALD and studied its effect on the water contact angle and the water permeance. Here, we found that the membranes became more hydrophilic, and the permeance decreased with increasing ALD Al 2 O 3 cycles. Finally, we studied the effect of hydrophilic (SnO 2 )/hydrophobic (In 2 O 3 ) ALD metal oxide coatings on membrane properties. We found that the most hydrophilic SnO 2 showed the highest water flux and the least hydrophilic In 2 O 3 showed the lowest water flux through the PCTE membranes. Our results demonstrate that ALD is an effective method to tune the surface and transport properties of PCTE membranes, but care must be exercised to avoid SIS and bulk modification of the polymer.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2020

A study of damage-free in-situ etching of GaN in metalorganic chemical vapor deposition (MOCVD) by tertiarybutylchloride (TBCl)

This paper reports a study of the effect of NH 3 flow rate and reactor temperature on the tertiarybutylchloride (TBCl) etching of patterned GaN-on-sapphire templates. It is found that a reduced NH 3 flow rate and an elevated reactor temperature can eliminate islands or dots on the surface, while at the same time, enhance the etching around dislocations. TBCl etching was also performed on planar bulk GaN templates with much lower dislocation density. We find an atomically flat and layer-by-layer etching behavior within the region free of dislocations. Surface kinetics analysis reveals a short diffusion length of etching products. Room-temperature photoluminescence (PL) and x-ray photoelectron spectroscopy (XPS) measurements confirm that TBCl etching is capable of removing the damage and impurities induced by plasma etching without introducing additional damage.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2016

Fabrication of high aspect ratio TiO{sub 2} and Al{sub 2}O{sub 3} nanogratings by atomic layer deposition

The authors report on the fabrication of TiO{sub 2} and Al{sub 2}O{sub 3} nanostructured gratings with an aspect ratio of up to 50. The gratings were made by a combination of atomic layer deposition (ALD) and dry etch techniques. The workflow included fabrication of a Si template using deep reactive ion etching followed by ALD of TiO{sub 2} or Al{sub 2}O{sub 3}. Then, the template was etched away using SF{sub 6} in an inductively coupled plasma tool, which resulted in the formation of isolated ALD coatings, thereby achieving high aspect ratio grating structures. SF{sub 6} plasma removes silicon selectively without any observable influence on TiO{sub 2} or Al{sub 2}O{sub 3}, thus revealing high selectivity throughout the fabrication. Scanning electron microscopy was used to analyze every fabrication step. Due to nonreleased stress in the ALD coatings, the top parts of the gratings were observed to bend inward as the Si template was removed, thus resulting in a gradual change in the pitch value of the structures. The pitch on top of the gratings is 400 nm, and it gradually reduces to 200 nm at the bottom. The form of the bending can be reshaped by Ar{sup +} ion beam etching. The chemical purity of the ALD grown materials was analyzed by x-ray photoelectron spectroscopy. The approach presented opens the possibility to fabricate high quality optical metamaterials and functional nanostructures.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Atomically precise graphene etch stops for three dimensional integrated systems from two dimensional material heterostructures

Atomically precise fabrication methods are critical for the development of next-generation technologies. For example, in nanoelectronics based on van der Waals heterostructures, where two-dimensional materials are stacked to form devices with nanometer thicknesses, a major challenge is patterning with atomic precision and individually addressing each molecular layer. Here we demonstrate an atomically thin graphene etch stop for patterning van der Waals heterostructures through the selective etch of two-dimensional materials with xenon difluoride gas. Graphene etch stops enable one-step patterning of sophisticated devices from heterostructures by accessing buried layers and forming one-dimensional contacts. Graphene transistors with fluorinated graphene contacts show a room temperature mobility of 40,000 cm 2 V -1 s -1 at carrier density of 4 × 10 12 cm -2 and contact resistivity of 80 Ω·μm. We demonstrate the versatility of graphene etch stops with three-dimensionally integrated nanoelectronics with multiple active layers and nanoelectromechanical devices with performance comparable to the state-of-the-art.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Fabrication of Core–Shell Nanotube Array for Artificial Photosynthesis Featuring an Ultrathin Composite Separation Membrane

We report macroscale arrays of cobalt oxide-silica core-shell nanotubes with high aspect ratio and ultrathin walls of less than 20 nm have been fabricated. The silica shells feature embedded oligo-para(phenylenevinylene) molecules for charge transport across the insulating silica layer, which is tightly controlled by their electronic properties. The assembly is based on the use of a sacrificial Si nanorod array template combined with atomic layer deposition, covalent anchoring of organic wire molecules, and dry cryo-etching. High-resolution TEM imaging of samples prepared by microtome affords structural details of single core-shell nanotubes. The integrity of silica-embedded organic wire molecules exposed to atomic layer deposition, thermal treatment, and harsh etching procedures is demonstrated by grazing angle ATR FT-IR, FT-Raman, and XPS spectroscopy. The inorganic oxide-based core-shell nanotubes with ultrathin gas-impermeable, proton-conducting silica shells functionalized by molecular wires enable complete nanoscale photosynthetic units for CO 2 reduction by H 2 O under membrane separation. Arrays of massive numbers of such core-shell nanotube units afford a design that extends the separation of the incompatible H 2 O oxidation and CO 2 reduction catalysis environments across the continuum of length scales from nanometers to centimeters.

molecular wires↗
DOE OSTI2017

ALD synthesis of platinum nanoparticles on single-crystal SrTiO 3 pretreated with wet chemical etching

Formic acid-hydrogen peroxide and buffered hydrogen fluoride-hydrogen peroxide solutions were used to etch single-crystal strontium titanate to remove carbon contamination and increase hydroxyl group density to improve atomic layer deposition onto these materials. X-ray photoelectron spectroscopy indicated that both are effective for carbon contamination removal. However, for increasing hydroxyl group density on the strontium titanate surface, the buffered hydrogen fluoride-hydrogen peroxide is more effective. Transmission electron microscopy and x-ray photoemission show enhanced platinum deposition on the etched strontium titanate surface. Here these results provide the basis for optimizing atomic layer deposition for other technologically relevant materials.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Improving Oxygen Reduction Performance of Surface-Layer-Controlled Pt–Ni Nano-Octahedra via Gaseous Etching

This study demonstrates an atomic composition manipulation on Pt–Ni nano-octahedra to enhance their electrocatalytic performance. By selectively extracting Ni atoms from the {111} facets of the Pt–Ni nano-octahedra using gaseous carbon monoxide at an elevated temperature, a Pt-rich shell is formed, resulting in an ~2 atomic layer Pt-skin. The surface-engineered octahedral nanocatalyst exhibits a significant enhancement in both mass activity (~1.8-fold) and specific activity (~2.2-fold) toward the oxygen reduction reaction compared with its unmodified counterpart. After 20,000 potential cycles of durability tests, the surface-etched Pt–Ni nano-octahedral sample shows a mass activity of 1.50 A/mg Pt , exceeding the initial mass activity of the unetched counterpart (1.40 A/mg Pt ) and outperforming the benchmark Pt/C (0.18 A/mg Pt ) by a factor of 8. DFT calculations predict this improvement with the Pt surface layers and support these experimental observations. Therefore, this surface-engineering protocol provides a promising strategy for developing novel electrocatalysts with improved catalytic features.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Tunable Visibly Transparent Optics Derived from Porous Silicon

Visibly transparent porous silicon dioxide (PSiO 2 ) and PSiO 2 /titanium dioxide (TiO 2 ) optical elements were fabricated by thermal oxidation, or a combination of thermal oxidation and atomic layer deposition infilling, of an electrochemically etched porous silicon (PSi) structure containing an electrochemically defined porosity profile. The thermally oxidized PSiO 2 structures are transparent at visible wavelengths and can be designed to have refractive indices ranging from 1.1 to 1.4. The refractive index can be increased above 2.0 through TiO 2 infilling of the pores. Applying this oxidation and TiO 2 infilling methodology enabled tuning of a distributed Bragg reflector (DBR) formed from PSi across the visible spectrum. At the maximum filling, the DBR exhibited a transmission of 2% at 620 nm. Simulations match well with measured spectra. In addition to forming DBR filters, phase-shaping gradient refractive index (GRIN) elements were formed. As a demonstration, a 4 mm diameter radial GRIN PSiO 2 element with a parabolic, lens-like phase profile with a calculated focal length of 1.48 m was formed. The calculated focal length was reduced to 0.80 m upon the addition of TiO 2 . All the structures showed broad transparency in the visible and were stable to the materials conversion process.

36 MATERIALS SCIENCE↗
DOE OSTI2023

High-throughput manufacturing of epitaxial membranes from a single wafer by 2D materials-based layer transfer process

Layer transfer techniques have been extensively explored for semiconductor device fabrication as a path to reduce costs and to form heterogeneously integrated devices. These techniques entail isolating epitaxial layers from an expensive donor wafer to form freestanding membranes. However, current layer transfer processes are still low-throughput and too expensive to be commercially suitable. Here we report a high-throughput layer transfer technique that can produce multiple compound semiconductor membranes from a single wafer. We directly grow two-dimensional (2D) materials on III–N and III–V substrates using epitaxy tools, which enables a scheme comprised of multiple alternating layers of 2D materials and epilayers that can be formed by a single growth run. Each epilayer in the multistack structure is then harvested by layer-by-layer mechanical exfoliation, producing multiple freestanding membranes from a single wafer without involving time-consuming processes such as sacrificial layer etching or wafer polishing. Moreover, atomic-precision exfoliation at the 2D interface allows for the recycling of the wafers for subsequent membrane production, with the potential for greatly reducing the manufacturing cost.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2019

Next generation of extreme-resolution electron beam lithography

In top down nanofabrication research facilities around the world, the direct-write high-resolution patterning tool of choice is overwhelmingly electron beam lithography. Remarkably small features can be written in a variety of polymeric resists [V. R. Manfrinato et al., Nano Lett. 14, 4406 (2014); V. R. Manfrinato, A. Stein, L. Zhang, Y. Nam, K. G. Yager, E. A. Stach, and C. T. Black, Nano Lett. 17, 4562 (2017)]. However, this technology, which in this article the authors will refer to as conventional electron beam lithography (CEBL), is reaching its practical resolution and precision limits [V. R. Manfrinato et al., Nano Lett. 14, 4406 (2014)]. Hydrogen depassivation lithography (HDL) [J. N. Randall, J. W. Lyding, S. Schmucker, J. R. Von Ehr, J. Ballard, R. Saini, and Y. Ding, J. Vac. Sci. Technol. B 27, 2764 (2009); J. N. Randall, J. B. Ballard, J. W. Lyding, S. Schmucker, J. R. Von Ehr, R. Saini, H. Xu, and Y. Ding, Microelectron. Eng. 87, 955 (2010)] is a different version of electron beam lithography that is not limited in resolution and precision in the way that CEBL is. It uses a cold field emitter, a scanning tunneling microscope (STM) tip, to deliver a small spot of electrons on a Si (100) 2 × 1 H-passivated surface to expose a self-developing resist that is a monolayer of H adsorbed to the Si surface. Subnanometer features [S. Chen, H. Xu, K. E. J. Goh, L. Liu, and J. N. Randall, Nanotechnology 23, 275301 (2012)], and even the removal of single H atoms can be routinely accomplished [M. A. Walsh and M. C. Hersam, Annu. Rev. Phys. Chem. 60, 193 (2009)]. It is known that the H desorption process at low biases is a multielectron process [E. Foley, A. Kam, J. Lyding, and P. Avouris, Phys. Rev. Lett. 80, 1336 (1998)], but the tunneling distribution of the electrons from the STM tip to the Si surface lattice is not known. The authors have developed a simple model that demonstrates that the combination of two highly nonlinear processes creates a much higher contrast exposure mechanism than CEBL. Currently, HDL has been used almost exclusively on the Si (100) surface and has a limited number of pattern transfer techniques including Si and Ge patterned epitaxy, selective atomic layer deposition of TiO2 followed by reactive ion etching [J. B. Ballard, T. W. Sisson, J. H. G. Owen, W. R. Owen, E. Fuchs, J. Alexander, J. N. Randall, and J. R. Von Ehr, J. Vac. Sci. Technol. B 31, 06FC01 (2013)], and selective deposition of dopant atoms for quantum devices and materials [Workshop on 2D Quantum MetaMaterials held at NIST, Gaithersburg, MD, April 25–26, 2018, edited by J. Owen and W. P. Kirk]. While the throughput of HDL is very low, going parallel in a big way appears promising [J. N. Randall, J. H. G. Owen, J. Lake, R. Saini, E. Fuchs, M. Mahdavi, S. O. R. Moheimani, and B. C. Schaefer, J. Vac. Sci. Technol. B 36, 6 (2018)]. However, the most exciting aspect of HDL is its atomic-scale resolution and precision, which is key to nanoscale research. The authors see HDL emerging as the ultimate high-resolution patterning tool in top down nanofabrication research facilities.

42 ENGINEERING↗
DOE OSTI2016

Edge structures and properties of triangular antidots in single-layer MoS{sub 2}

Density functional theory and experiments are employed to shed light on the edge structures of antidots in O etched single-layer MoS{sub 2}. The equilibrium morphology is found to be the zigzag Mo edge with each Mo atom bonded to two O atoms, in a wide range of O chemical potentials. Scanning electron microscopy shows that the orientation of the created triangular antidots is opposite to the triangular shape of the single-layer MoS{sub 2} samples, in agreement with the theoretical predictions. Furthermore, edges induced by O etching turn out to be p-doped, suggesting an effective strategy to realize p-type MoS{sub 2} devices.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2023

β -Ga 2 O 3 trench Schottky diodes by low-damage Ga-atomic beam etching

β-Ga 2 O 3 trench Schottky barrier diodes fabricated through a Gallium atomic beam etching technique with excellent field strength and power device figure of merit are demonstrated. Trench formation was accomplished by a low-damage Ga flux etch that enables near-ideal forward operating characteristics that are independent of fin orientation. The reverse breakdown field strength of greater than 5.10 MV/cm is demonstrated at a breakdown voltage of 1.45 kV. This result demonstrates the potential for Ga atomic beam etching and high-quality dielectric layers for improved performance in β-Ga 2 O 3 vertical power devices.

42 ENGINEERING↗
DOE OSTI2024

Advancing the Understanding of Manufacturing Tools for Hardware Security

This project’s goal was to explore new methods and tools to evaluate the focused ion beam (FIB) effect on active electrical devices, which is becoming increasingly challenged by the continual decrease in transistor geometry. Novel hole transfer methods leveraging FIB patterning were demonstrated utilizing selective area atomic layer deposition (ALD) and metal assisted chemical etching. A FIB damage electrical tester device was fabricated, and the effects of FIB beams were characterized by examining change in performance of damaged transistors. Detailed characterization of end-of-range damage for common FIB ions were correlated to modeling methods. Finally, undamaged and damaged devices were simulated by Charon to begin understanding the FIB effects on active devices. This test platform along with modeling methods give a powerful way to assess FIB damage in materials and devices, and with more development can help establish methods to predict FIB damage effects on electrical devices.

42 ENGINEERING↗
DOE OSTI2017

High-efficiency selective boron emitter formed by wet chemical etch-back for n -type screen-printed Si solar cells

Front metal contact induced recombination and resistance are major efficiency limiting factors of large-area screen-printed n-type front junction Si solar cells with homogeneous emitter and tunnel oxide passivated back contact (TOPCON). Here, this paper shows the development of a selective boron emitter (p + /p ++ ) formed by a screen-printed resist masking and wet chemical etch-back process, which first grows a porous Si layer and subsequently removes it. Various wet-chemical solutions for forming porous Si layer are investigated. An industrial compatible process with sodium nitrite (NaNO 2 ) catalyst is developed to uniformly etch-back the ~47 Ω/ atmospheric pressure chemical vapor deposited heavily doped boron emitter to ~135 Ω/ by growing a 320 nm porous Si layer within 3 min and subsequently removing it. After etching back, the boron emitter was subjected to a thermal oxidation to lower the surface concentration and the emitter saturation current density J 0e . Various etched-back emitters were evaluated by measuring J 0e on symmetric test structures with atomic layer deposited aluminum oxide (Al 2 O 3 ) passivation. Very low J 0e of 21, 14, and 9 fA/cm 2 were obtained for the 120, 150, and 180 Ω/ etched-back emitters, respectively. A solar cell with a selective emitter (65/180 Ω/ ) formed by this etch-back technology and with an Al/Ag contact on the front and TOPCON on the back gave an open-circuit voltage (V oc ) of 682.8 mV and efficiency of 21.04% on n-type Czochralski Si wafer. Finally, this demonstrates the potential of this technology for next generation high-efficiency industrial n-type Si solar cells.

14 SOLAR ENERGY↗
DOE OSTI2017

Facile Synthesis of Ru-Based Octahedral Nanocages with Ultrathin Walls in a Face-Centered Cubic Structure

Noble-metal nanocages with ultrathin (less than 2 nm) walls and well-defined facets have received great interest owing to their remarkable utilization efficiency of atoms and facet-dependent catalytic activities toward various reactions. Here, we report the synthesis of Ru-based octahedral nanocages covered by {111} facets, together with ultrathin walls in a face-centered cubic (fcc) structure rather than the hexagonal close-packed (hcp) of bulk Ru. The involvement of slow injection for the Ru(III) precursor, the introduction of KBr, and the use of elevated temperature were all instrumental to the formation of Pd@Ru core–shell octahedra with a conformal, uniform shell and a smooth surface. The {111} facets were well preserved during the selective removal of the Pd cores via wet etching, even when the Ru walls were only five atomic layers in thickness. Through in situ XRD, we demonstrated that the fcc structure of the Ru nanocages was stable up to 300 °C. We also used first-principles, self-consistent density functional theory calculations to study the adsorption and dissociation of N2 as a means to predict the catalytic performance toward ammonia synthesis. Our results suggested that the small proportions of Pd atoms left behind in the walls during etching could play a key role in stabilizing the adsorption of N2 as well as in reducing the activation energy barrier to N2 dissociation.

Zhao, Ming↗
DOE OSTI2026

Recent progress in atomic-scale controlled plasma processing

Atomic-scale control in plasma processing is becoming increasingly critical for fabricating of advanced semiconductor devices, particularly as the industry shifts toward three-dimensional (3D) architectures and high-aspect-ratio (HAR) structures. This review presents a comprehensive overview of recent developments in atomic-scale controlled plasma processes, organized along two key directions: the hierarchical structure of plasma–surface interactions and the generational evolution of atomic layer processing (ALP) technologies. We examined the gas phase, where molecular design enables selective generation of ions and radicals; the boundary layer, where transport phenomena govern species delivery into nanoscale features, and the surface, where temperature-dependent reactions and cyclic processing determine etching selectivity and precision. Building on this foundation, we outline five generations of ALP—from thermal atomic layer deposition to transport-aware, temporally and structurally decoupled processes—highlighting the increasing sophistication of process control. The review further explores the transition from empirical recipe development to science-based, data-driven methodologies. By integrating quantum-chemical modeling, advanced diagnostics, and machine learning, we demonstrated how predictive models can link plasma species composition to process outcomes, enabling autonomous and adaptive control strategies. Finally, this review discusses the broader societal implications of plasma process innovation through the E4 quartet: energy and resource efficiency, environmental sustainability, evolutionary advancement, and educational promotion. These principles guide the development of sustainable and intelligent atomic-scale manufacturing technologies that are not only technically advanced but also socially responsible.

Ishikawa, Kenji [Nagoya Univ. (Japan)] (ORCID:0000↗