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At least 73 records · Page 4

Update on Linear Mode Photon Counting with the HgCdTe Linear Mode Avalanche Photodiode

The behavior of the gain-voltage characteristic of the mid-wavelength infrared cutoff HgCdTe linear mode avalanche photodiode (e-APD) is discussed both experimentally and theoretically as a function of the width of the multiplication region. Data are shown that demonstrate a strong dependence of the gain at a given bias voltage on the width of the n− gain region. Geometrical and fundamental theoretical models are examined to explain this behavior. The geometrical model takes into account the gain-dependent optical fill factor of the cylindrical APD. The theoretical model is based on the ballistic ionization model being developed for the HgCdTe APD. It is concluded that the fundamental theoretical explanation is the dominant effect. A model is developed that combines both the geometrical and fundamental effects. The model also takes into account the effect of the varying multiplication width in the low bias region of the gain-voltage curve. It is concluded that the lower than expected gain seen in the first 2 × 8 HgCdTe linear mode photon counting APD arrays, and higher excess noise factor, was very likely due to the larger than typical multiplication region length in the photon counting APD pixel design. The implications of these effects on device photon counting performance are discussed.

HgCdTe↗

Radiation Tests of Single Photon Avalanche Diode for Space Applications

Single photon avalanche diodes (SPADs) have been recently studied as photodetectors for applications in space missions. In this presentation we report the results of radiation hardness test on large area SPAD (actual results refer to SPADs having 500 micron diameter). Dark counts rate as low as few kHz at −10 degC has been obtained for the 500 micron devices, before irradiation. We performed bulk damage and total dose radiation tests with protons and gamma-rays in order to evaluate their radiation hardness properties and their suitability for application in a Low Earth Orbit (LEO) space mission. With this aim SPAD devices have been irradiated using up to 20 krad total dose with gamma-rays and 5 krad with protons. The test performed show that large area SPADs are very sensitive to proton doses as low as 2×10(exp 8) (1 MeV eq) n/cm2 with a significant increase in dark counts rate (DCR) as well as in the manifestation of the "random telegraph signal" effect. Annealing studies at room temperature (RT) and at 80 degC have been carried out, showing a high decrease of DCR after 24-48 h at RT. Lower protons doses in the range 1-10×10(exp 7) (1 MeV eq) n/cm(exp 2) result in a lower increase of DCR suggesting that the large-area SPADs tested in this study are well suitable for application in low-inclination LEO, particularly useful for gamma-ray astrophysics.

radiation hardness↗

Improved frequency divider employs transistor avalanche effect

New frequency divider circuit can be synchronized over a wider input control frequency range, has greater phase stability, and is less sensitive to temperature changes than conventional synchronized oscillators. The new circuit uses the avalanche breakdown mode of operation of transistors.

Johns, C. E.↗

Noise in avalanche transit-time devices.

A survey of work performed on noise in avalanche transit-time devices is presented. Both theoretical and experimental results on noise mechanisms and performance of these devices, when they are employed as oscillators, amplifiers, and self-oscillating mixers, are reviewed. Several unexplained experimental results and points of disagreement between the experimental work results of various workers are identified. Suggestions for further studies are offered.

Gupta, M.↗

Application of LANDSAT data to delimitation of avalanche hazards in Montane Colorado

The author has identified the following significant results. Interpretation of small scale LANDSAT imagery provides a means for determining the general location and distribution of avalanche paths. The accuracy and completeness of small scale mapping is less than is obtained from the interpretation of large scale color infrared photos. Interpretation of enlargement prints (18X) of LANDSAT imagery is superior to small scale imagery, because more detailed information can be extracted and annotated.

Knepper, D. H.↗

A 1.06 micrometer avalanche photodiode receiver

The development of a complete solid state 1.06 micron optical receiver which can be used in optical communications at data rates approaching 1.5 Gb/s, or in other applications requiring sensitive, short pulse detection, is reported. This work entailed both the development of a new type of heterojunction III-V semiconductor alloy avalanche photodiode and an extremely charge-sensitive wideband low noise preamp design making use of GaAs Schottky barrier-gate field effect transistors (GAASFET's) operating in in the negative-feedback transimpedance mode. The electrical characteristics of the device are described.

Eden, R. C.↗

The 1.06 micrometer avalanche photodiode detectors with integrated circuit preamplifiers

The development of a complete solid state 1.06 micron optical receiver which can be used in optical communications at data rates approaching 1.5 Gb/s, or in other applications requiring sensitive, short-pulse detection, is reported. This work entailed both the development of a new type of heterojunction 3-5 semiconductor alloy avalanche photodiode and an extremely charge-sensitive wideband low-noise preamp design making use of GaAs Schottky barrier-gate field effect transistors.

Eden, R. C.↗

First principles numerical model of avalanche-induced arc discharges in electron-irradiated dielectrics

The model consists of four phases: single electron dynamics, single electron avalanche, negative streamer development, and tree formation. Numerical algorithms and computer code implementations are presented for the first three phases. An approach to developing a code description of fourth phase is discussed. Numerical results are presented for a crude material model of Teflon.

Beers, B. L.↗

State-of-the-art performance of GaAlAs/GaAs avalanche photodiodes

Ga(0.15)Al(0.85)As/GaAs avalanche photodiodes have been successfully fabricated. The performance of these detectors is characterized by a rise time of less than 35 ps, an external quantum efficiency with an antireflection coating of 95% at 0.53 microns, and a microwave optical gain of 42 dB. The dark current density is in the low range (10 to the minus A/sq cm) at one-half the breakdown voltages, and rises to 0.0001 A/sq cm at 42 dB optical gain.

Law, H. D.↗

Photon Detection with Cooled Avalanche Photodiodes: Theory and Preliminary Experimental Results

Avalanche photodiodes (APDs) can be operated in a geiger-tube mode so that they can respond to single electron events and thus be used as photon counting detectors. Operational characteristics and theory of APDs while used in this mode are analyzed and assessed. Preliminary experimental investigation of several commercially available APDs has commenced, and initial results for dark count statistics are presented.

Robinson, D. L.↗

Effect of atmospheric turbulence on the bit error probability of a space to ground near infrared laser communications link using binary pulse position modulation and an avalanche photodiode detector

The effect of atmospheric turbulence on the bit error rate of a space-to-ground near infrared laser communications link is investigated, for a link using binary pulse position modulation and an avalanche photodiode detector. Formulas are presented for the mean and variance of the bit error rate as a function of signal strength. Because these formulas require numerical integration, they are of limited practical use. Approximate formulas are derived which are easy to compute and sufficiently accurate for system feasibility studies, as shown by numerical comparison with the exact formulas. A very simple formula is derived for the bit error rate as a function of signal strength, which requires only the evaluation of an error function. It is shown by numerical calculations that, for realistic values of the system parameters, the increase in the bit error rate due to turbulence does not exceed about thirty percent for signal strengths of four hundred photons per bit or less. The increase in signal strength required to maintain an error rate of one in 10 million is about one or two tenths of a db.

Safren, H. G.↗

Photon detection with cooled avalanche photodiodes

Commercial avalanche photodiodes have been operated as single-photon detectors at an optimum operating temperature and bias voltage. These detectors were found to be 1.5-3 times more sensitive than presently available photomultiplier tubes (PMTs). Both single-photon detection probability and detector noise increase with bias voltage; detection probabilities greater than twice that of a PMT were obtained with detector noise levels below 100 counts per second. Higher probabilities were measured at higher noise levels. The sources of noise and their dependence on temperature and bias voltage are discussed.

Robinson, D. L.↗