Search NASA⌕ Search

SEARCH · Search NASA

Results for “back-illuminated”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 73 records · Page 4

A Program to Detect and Characterize Extra-Solar Giant Planets

We initiated a significant hardware upgrade to the AFOE, to increase its efficiency for precise radial velocity studies to the level where we can continue to contribute usefully to extrasolar planet research on relatively bright stars. The AFOE, at a 1.5-m telescope, will of course not have the sensitivity of radial velocity instruments at larger telescopes, such as the HIRES on Keck or the Hectochelle on the MMT telescope (about to come on line). However, it has been possible to increase its efficiency for precise radial velocity studies by a factor of 4 to 5, which-combined with the large amount of telescope time available at the 1.5-m telescope-will permit us to do intensive follow-up observations of stars brighter than about 8 magnitude. The AFOE was originally designed primarily for asteroseismology using a ThAr reference. This provided useful wavelength stability over tens of minutes as required for asteroseismology, but we were unable to get a long-term (month-to-month) velocity precision better than about 15 m/s with that setup. Hence, we implemented an iodine cell as a wavelength reference for extrasolar planet studies. However, the optical design of the original AFOE did not completely span the wavelength range covered by the iodine absorption spectrum, and furthermore the optics suffered significant light loss through optical obscuration in the camera secondary. To remedy this, we replaced the AFOE grating with a new one that covered the entire iodine spectral range at somewhat lower spectral resolution, and replaced the camera with a transmitting lens. (The use of a lens was made possible by restricting the spectral range covered by the upgraded AFOE to only the iodine region.) These upgrades were successfully completed, and the instrument was tested for three nights in fall of 2002. The expected improvement in sensitivity by a factor of 4 to 5 was observed: that is, the same velocity precision as previously attained (of order 5 to 7 m/s) was now obtained on a stars that are about 4 to 5 times fainter. Unfortunately, just after installing the new AFOE optics, there was a catastrophic failure of the old Tektronix CCD. A careful investigation was made, and it was determined that the failure was probably due to too many thermal cyclings over the previous 8 years. The only solution was to purchase a new CCD. Internal funds of $16,000 were found for this purpose, and the new CCD (a thinned, back-illuminated Marconi 2K x 2K device with 13.5 micron pixels, and employing dual readout channels to keep the readout time as short as 20 seconds) was ordered, has now arrived, and is currently under test before 1 being installed in the AFOE liquid nitrogen dewar. At the same time, we expect to implement new CCD control electronics. This system should be better in many ways than the previous detector (including eliminating the need for UV flashing to maximize the quantum efficiency). We plan to install the detector on the telescope and begin operations again in April of this year.

Lindstrom, David↗

Modeling of Proton-Induced CCD Degradation in the Chandra X-Ray Observatory

Modeling results are presented for proton-induced degradation of charge-coupled devices (CCDs) used in the Advanced CCD Imaging Spectrometer instrument on the Chandra X-Ray Observatory. A methodology is described that provides insights regarding degradation mechanism and on-orbit performance for front-illuminated and back-illuminated CCDs Proton-induced changes in charge transfer inefficiency are modeled. The observed amount of on-orbit degradation can be accounted for using a proton spectrum at the CCD location that is reduced in magnitude by a factor of approx. 1E5 compared to the spectrum incident on the spacecraft.

Lo, D. H.↗

A Program to Detect and Characterize Extra-Solar Giant Planets

The upgrade to the AFOE spectrograph at the 1.5-m Tillinghast telescope at FLWO Observatory, described in detail in the previous progress report, was completed. Work included installing a new CCD detector (using SA0 internal funds) to replace the previous detector, which had failed after many thermal cyclings during the previous nearly ten years of operation. The new detector (a back-illuminated Marconi 2K x 2K detector) shows excellent quantum efficiency, and employs dual readout channels to keep the readout time as short as 20 seconds. Tests of the attainable radial velocity precision of the upgraded spectrograph with the new detector show an improvement in radial velocity detection efficiency by a factor of about 10 over the previous AFOE configuration, allowing us to push the photon-noise-limited doppler precision of 7 m/s to correspondingly fainter stars. This work was carried out by Co-investigator Sylvain Korzennik, along with the late Peter Nisenson.

Lindstrim, David↗

Managing radiation degradation of CCDs on the Chandra X-ray Observatory II

The CCDs on the Chandra X-ray Observatory are vulnerable to radiation damage from low-energy protons scattered off the telescope's mirrors onto the focal plane. Following unexpected damage incurred early in the mission, the Chandra Team developed, implemented, and maintains a radiation-protection program. This program - involving scheduled radiation safing during radiation-belt passes, intervention based upon real-time space-weather conditions and radiation-environment modeling, and on-board radiation monitoring with autonomous radiation safing - has successfully managed the radiation damage to the CCDs. Since implementing the program, the charge-transfer inefficiency (CTI) has increased at an average annual rate of only 2.9x10^-6 (2.3%) for the front- illuminated CCDs and 0.95x10^-6 (6.5%) for the back-illuminated CCDs. This paper describes the current status of Chandra radiation-management program.

O'Dell, Stephen L.↗

Temperature Evolution in Excitonic Absorptions of Cd(0.96)Zn(0.04) Materials

We report cryogenic optical properties of Cd(0.96)Zn(0.04)Te wafers that are used as substrate seed layers in HgCdTe focal-plane array detectors. These studies are motivated by the fact that the substrate optical properties influence the overall detector performance. The studies consist of measuring the sample frequency dependent transmittance (T) and reflectance (R) above and below the optical band-gap in the UV/Visible and infrared frequency ranges, and with temperature variation of the sample from 5 to 300 K. These measurements show that the optical gap near 1.49 eV at 300 K increases to 1.62 eV at 5 K. Finally, we observe sharp absorption peaks near this gap energy at low temperatures. The close proximity of these peaks to the optical transition threshold suggests that they originate from the creation of bound electron-hole pairs or excitons. The decay of these excitonic absorptions may contribute to a photoluminescence and transient background response of these back-illuminated HgCdTe CCD detectors.

Quijada, Manuel A.↗

Temperature Evolution of Excitonic Absorptions in Cd(1-x)Zn(x)Te Materials

The studies consist of measuring the frequency dependent transmittance (T) and reflectance (R) above and below the optical band-gap in the UV/Visible and infrared frequency ranges for Cd(l-x),Zn(x),Te materials for x=0 and x=0.04. Measurements were also done in the temperature range from 5 to 300 K. The results show that the optical gap near 1.49 eV at 300 K increases to 1.62 eV at 5 K. Finally, we observe sharp absorption peaks near this gap energy at low temperatures. The close proximity of these peaks to the optical transition threshold suggests that they originate from the creation of bound electron-hole pairs or excitons. The decay of these excitonic absorptions may contribute to a photoluminescence and transient background response of these back-illuminated HgCdTe CCD detectors.

Quijada, Manuel A.↗

Managing Radiation Degradation of CCDs on the Chandra X-Ray Observatory--III

The CCDs on the Chandra X-ray Observatory are vulnerable to radiation damage from low-energy protons scattered off the telescope's mirrors onto the focal plane. Following unexpected damage incurred early in the mission, the Chandra team developed, implemented, and maintains a radiation-protection program. This program--involving scheduled radiation safing during radiation-belt passes, intervention based upon real-time space-weather conditions and radiation-environment modeling, and on-board radiation monitoring with autonomous radiation safing--has successfully managed the radiation damage to the CCDs. Since implementing the program, the charge-transfer inefficiency (CTI) has increased at an average annual rate of only 3.2x 10(exp -6) (2.3 percent) for the front-illuminated CCDs and 1.0x10(exp -6) (6.7 percent) for the back-illuminated CCDs. This paper describes the current status of the Chandra radiation-management program, emphasizing enhancements implemented since the previous papers.

O'Dell, Stephen L.↗

Ultra-Low-Temperature Homoepitaxial Growth of Sb-Doped Silicon

An ultra-low-temperature process for homoepitaxial growth of high-quality, surface-confined, Sb-doped silicon layers is presented. Non-equilibrium growth by molecular beam epitaxy (MBE) is used to achieve dopant incorporation in excess of 2x10(exp 14) per sq cm in a thin, surface-confined layer. Sb surface segregation larger than expected from theoretical models was observed, in agreement with other experimental works. Furthermore, this work details an entirely low-temperature process (less than 450 degree C) that can be applied to fully processed and aluminum-metallized silicon devices. One application of this process is the formation of a back-surface electrode for back-illuminated high-purity silicon imaging arrays.

Molecular beam epitaxy↗

Dual Band Deep Ultraviolet AlGaN Photodetectors

We report on the design, fabrication and characterization of a back-illuminated voltage bias selectable dual-band AlGaN UV photodetector. The photodetector can separate UVA and W-B band radiation by bias switching a two terminal n-p-n homojunction structure that is fabricated in the same pixel. When a forward bias is applied between the top and bottom electrodes, the detector can sense UV-A and reject W-B band radiation. Alternatively, under reverse bias, the photodetector can sense UV-B and reject UV-A band radiation.

Aslam, S.↗

NASA Tech Briefs, March 2009

Topics covered include: Improved Instrument for Detecting Water and Ice in Soil; Real-Time Detection of Dust Devils from Pressure Readings; Determining Surface Roughness in Urban Areas Using Lidar Data; DSN Data Visualization Suite; Hamming and Accumulator Codes Concatenated with MPSK or QAM; Wide-Angle-Scanning Reflectarray Antennas Actuated by MEMS; Biasable Subharmonic Membrane Mixer for 520 to 600 GHz; Hardware Implementation of Serially Concatenated PPM Decoder; Symbolic Processing Combined with Model-Based Reasoning; Presentation Extensions of the SOAP; Spreadsheets for Analyzing and Optimizing Space Missions; Processing Ocean Images to Detect Large Drift Nets; Alternative Packaging for Back-Illuminated Imagers; Diamond Machining of an Off-Axis Biconic Aspherical Mirror; Laser Ablation Increases PEM/Catalyst Interfacial Area; Damage Detection and Self-Repair in Inflatable/Deployable Structures; Polyimide/Glass Composite High-Temperature Insulation; Nanocomposite Strain Gauges Having Small TCRs; Quick-Connect Windowed Non-Stick Penetrator Tips for Rapid Sampling; Modeling Unsteady Cavitation and Dynamic Loads in Turbopumps; Continuous-Flow System Produces Medical-Grade Water; Discrimination of Spore-Forming Bacilli Using spoIVA; nBn Infrared Detector Containing Graded Absorption Layer; Atomic References for Measuring Small Accelerations; Ultra-Broad-Band Optical Parametric Amplifier or Oscillator; Particle-Image Velocimeter Having Large Depth of Field; Enhancing SERS by Means of Supramolecular Charge Transfer; Improving 3D Wavelet-Based Compression of Hyperspectral Images; Improved Signal Chains for Readout of CMOS Imagers; SOI CMOS Imager with Suppression of Cross-Talk; Error-Rate Bounds for Coded PPM on a Poisson Channel; Biomorphic Multi-Agent Architecture for Persistent Computing; and Using Covariance Analysis to Assess Pointing Performance.

Source record↗

NASA Tech Briefs, July 2008

Topics covered include: Torque Sensor Based on Tunnel-Diode Oscillator; Shaft-Angle Sensor Based on Tunnel-Diode Oscillator; Ground Facility for Vicarious Calibration of Skyborne Sensors; Optical Pressure-Temperature Sensor for a Combustion Chamber; Impact-Locator Sensor Panels; Low-Loss Waveguides for Terahertz Frequencies; MEMS/ECD Method for Making Bi(2-x)Sb(x)Te3 Thermoelectric Devices; Low-Temperature Supercapacitors; Making a Back-Illuminated Imager with Back-Side Contact and Alignment Markers; Compact, Single-Stage MMIC InP HEMT Amplifier; Nb(x)Ti(1-x)N Superconducting-Nanowire Single-Photon Detectors; Improved Sand-Compaction Method for Lost-Foam Metal Casting; Improved Probe for Evaluating Compaction of Mold Sand; Polymer-Based Composite Catholytes for Li Thin-Film Cells; Using ALD To Bond CNTs to Substrates and Matrices; Alternating-Composition Layered Ceramic Barrier Coatings; Variable-Structure Control of a Model Glider Airplane; Axial Halbach Magnetic Bearings; Compact, Non-Pneumatic Rock-Powder Samplers; Biochips Containing Arrays of Carbon-Nanotube Electrodes; Nb(x)Ti(1-x)N Superconducting-Nanowire Single-Photon Detectors; Neon as a Buffer Gas for a Mercury-Ion Clock; Miniature Incandescent Lamps as Fiber-Optic Light Sources; Bidirectional Pressure-Regulator System; and Prism Window for Optical Alignment. Single-Grid-Pair Fourier Telescope for Imaging in Hard-X Rays and gamma Rays Range-Gated Metrology with Compact Optical Head Lossless, Multi-Spectral Data Compressor for Improved Compression for Pushbroom-Typetruments.

Source record↗

NASA Tech Briefs, June 2009

Topics covered include: Device for Measuring Low Flow Speed in a Duct, Measuring Thermal Conductivity of a Small Insulation Sample, Alignment Jig for the Precise Measurement of THz Radiation, Autoignition Chamber for Remote Testing of Pyrotechnic Devices, Microwave Power Combiners for Signals of Arbitrary Amplitude, Synthetic Foveal Imaging Technology, Airborne Antenna System for Minimum-Cycle-Slip GPS Reception, Improved Starting Materials for Back-Illuminated Imagers, Multi-Modulator for Bandwidth-Efficient Communication, Some Improvements in Utilization of Flash Memory Devices, GPS/MEMS IMU/Microprocessor Board for Navigation, T/R Multi-Chip MMIC Modules for 150 GHz, Pneumatic Haptic Interfaces, Device Acquires and Retains Rock or Ice Samples, Cryogenic Feedthrough Test Rig, Improved Assembly for Gas Shielding During Welding or Brazing, Two-Step Plasma Process for Cleaning Indium Bonding Bumps, Tool for Crimping Flexible Circuit Leads, Yb14MnSb11 as a High-Efficiency Thermoelectric Material, Polyimide-Foam/Aerogel Composites for Thermal Insulation, Converting CSV Files to RKSML Files, Service Management Database for DSN Equipment, Chemochromic Hydrogen Leak Detectors, Compatibility of Segments of Thermoelectric Generators, Complementary Barrier Infrared Detector, JPL Greenland Moulin Exploration Probe, Ultra-Lightweight Self-Deployable Nanocomposite Structure for Habitat Applications, and Room-Temperature Ionic Liquids for Electrochemical Capacitors.

Source record↗

Dual-Pump Coherent Anti-Stokes Raman Scattering Temperature and CO2 Concentration Measurements

Measurements of temperature and CO2 concentration using dual-pump coherent anti-Stokes Raman scattering, (CARS) are described. The measurements were performed in laboratory flames,in a room-temperature gas cell, and on an engine test stand at the U.S. Air Force Research Laboratory, Wright-Patterson Air Force Base. A modeless dye laser, a single-mode Nd:YAG laser, and an unintensified back-illuminated charge-coupled device digital camera were used for these measurements. The CARS measurements were performed on a single-laser-shot basis. The standard deviations of the temperatures and CO2 mole fractions determined from single-shot dual-pump CARS spectra in steady laminar propane/air flames were approximately 2 and 10% of the mean values of approximately 2000 K and 0.10, respectively. The precision and accuracy of single-shot temperature measurements obtained from the nitrogen part of the dual-pump CARS system were investigated in detail in near-adiabatic hydrogen/air/CO2 flames. The precision of the CARS temperature measurements was found to be comparable to the best results reported in the literature for conventional two-laser, single-pump CARS. The application of dual-pump CARS for single-shot measurements in a swirl-stabilized combustor fueled with JP-8 was also demonstrated.

Lucht, Robert P.↗

Solid-state curved focal plane arrays

The present invention relates to curved focal plane arrays. More specifically, the present invention relates to a system and method for making solid-state curved focal plane arrays from standard and high-purity devices that may be matched to a given optical system. There are two ways to make a curved focal plane arrays starting with the fully fabricated device. One way, is to thin the device and conform it to a curvature. A second way, is to back-illuminate a thick device without making a thinned membrane. The thick device is a special class of devices; for example devices fabricated with high purity silicon. One surface of the device (the non VLSI fabricated surface, also referred to as the back surface) can be polished to form a curved surface.

Nikzad, Shouleh↗

CMOS Imager Has Better Cross-Talk and Full-Well Performance

A complementary metal oxide/semiconductor (CMOS) image detector now undergoing development is designed to exhibit less cross-talk and greater full-well capacity than do prior CMOS image detectors of the same type. Imagers of the type in question are designed to operate from low-voltage power supplies and are fabricated by processes that yield device features having dimensions in the deep submicron range. Because of the use of low supply potentials, maximum internal electric fields and depletion widths are correspondingly limited. In turn, these limitations are responsible for increases in cross-talk and decreases in charge-handling capacities. Moreover, for small pixels, lateral depletion cannot be extended. These adverse effects are even more accentuated in a back-illuminated CMOS imager, in which photogenerated charge carriers must travel across the entire thickness of the device. The figure shows a partial cross section of the structure in the device layer of the present developmental CMOS imager. (In a practical imager, the device layer would sit atop either a heavily doped silicon substrate or a thin silicon oxide layer on a silicon substrate, not shown here.) The imager chip is divided into two areas: area C, which contains readout circuits and other electronic circuits; and area I, which contains the imaging (photodetector and photogenerated-charge-collecting) pixel structures. Areas C and I are electrically isolated from each other by means of a trench filled with silicon oxide. The electrical isolation between areas C and I makes it possible to apply different supply potentials to these areas, thereby enabling optimization of the supply potential and associated design features for each area. More specifically, metal oxide semiconductor field-effect transistors (MOSFETs) that are typically included in CMOS imagers now reside in area C and can remain unchanged from established designs and operated at supply potentials prescribed for those designs, while the dopings and the lower supply potentials in area I can be tailored to optimize imager performance. In area I, the device layer includes an n+ -doped silicon layer on which is grown an n-doped silicon layer. A p-doped silicon layer is grown on top of the n -doped layer. The total imaging device thickness is the sum of the thickness of the n+, n, and p layers. A pixel photodiode is formed between a surface n+ implant, a p implant underneath it, the aforementioned p layer, and the n and n+ layers. Adjacent to the diode is a gate for transferring photogenerated charges out of the photodiode and into a floating diffusion formed by an implanted p+ layer on an implanted n-doped region. Metal contact pads are added to the back-side for providing back-side bias.

Pain, Bedabrata↗

NASA Tech Briefs, October 2003

Topics covered include: Cryogenic Temperature-Gradient Foam/Substrate Tensile Tester; Flight Test of an Intelligent Flight-Control System; Slat Heater Boxes for Thermal Vacuum Testing; System for Testing Thermal Insulation of Pipes; Electrical-Impedance-Based Ice-Thickness Gauges; Simulation System for Training in Laparoscopic Surgery; Flasher Powered by Photovoltaic Cells and Ultracapacitors; Improved Autoassociative Neural Networks; Toroidal-Core Microinductors Biased by Permanent Magnets; Using Correlated Photons to Suppress Background Noise; Atmospheric-Fade-Tolerant Tracking and Pointing in Wireless Optical Communication; Curved Focal-Plane Arrays Using Back-Illuminated High-Purity Photodetectors; Software for Displaying Data from Planetary Rovers; Software for Refining or Coarsening Computational Grids; Software for Diagnosis of Multiple Coordinated Spacecraft; Software Helps Retrieve Information Relevant to the User; Software for Simulating a Complex Robot; Software for Planning Scientific Activities on Mars; Software for Training in Pre-College Mathematics; Switching and Rectification in Carbon-Nanotube Junctions; Scandia-and-Yttria-Stabilized Zirconia for Thermal Barriers; Environmentally Safer, Less Toxic Fire-Extinguishing Agents; Multiaxial Temperature- and Time-Dependent Failure Model; Cloverleaf Vibratory Microgyroscope with Integrated Post; Single-Vector Calibration of Wind-Tunnel Force Balances; Microgyroscope with Vibrating Post as Rotation Transducer; Continuous Tuning and Calibration of Vibratory Gyroscopes; Compact, Pneumatically Actuated Filter Shuttle; Improved Bearingless Switched-Reluctance Motor; Fluorescent Quantum Dots for Biological Labeling; Growing Three-Dimensional Corneal Tissue in a Bioreactor; Scanning Tunneling Optical Resonance Microscopy; The Micro-Arcsecond Metrology Testbed; Detecting Moving Targets by Use of Soliton Resonances; and Finite-Element Methods for Real-Time Simulation of Surgery.

Source record↗

Multiple-Event, Single-Photon Counting Imaging Sensor

The single-photon counting imaging sensor is typically an array of silicon Geiger-mode avalanche photodiodes that are monolithically integrated with CMOS (complementary metal oxide semiconductor) readout, signal processing, and addressing circuits located in each pixel and the peripheral area of the chip. The major problem is its single-event method for photon count number registration. A single-event single-photon counting imaging array only allows registration of up to one photon count in each of its pixels during a frame time, i.e., the interval between two successive pixel reset operations. Since the frame time can t be too short, this will lead to very low dynamic range and make the sensor merely useful for very low flux environments. The second problem of the prior technique is a limited fill factor resulting from consumption of chip area by the monolithically integrated CMOS readout in pixels. The resulting low photon collection efficiency will substantially ruin any benefit gained from the very sensitive single-photon counting detection. The single-photon counting imaging sensor developed in this work has a novel multiple-event architecture, which allows each of its pixels to register as more than one million (or more) photon-counting events during a frame time. Because of a consequently boosted dynamic range, the imaging array of the invention is capable of performing single-photon counting under ultra-low light through high-flux environments. On the other hand, since the multiple-event architecture is implemented in a hybrid structure, back-illumination and close-to-unity fill factor can be realized, and maximized quantum efficiency can also be achieved in the detector array.

Zheng, Xinyu↗

The STAR-X X-Ray Telescope Assembly (XTA)

The Survey and Time-domain Astrophysical Research eXplorer (STAR-X) science goals are to discover what powers the most violent explosions in the Universe, understand how black holes grow across cosmic time and mass scale, and measure how structure formation heats the majority of baryons in the Universe. To achieve these goals, STAR-X requires a powerful X-ray telescope with a large field of view, large collecting area, and excellent point spread function. The STAR-X instrument, the X-Ray Telescope Assembly (XTA), meets these requirements using a powerful X-ray mirror technology based on precision-polished single crystal silicon and a mature CCD detector technology. The XTA is composed of three major subsystems: an X-ray Mirror Assembly (MA) of high resolution, lightweight mirror segments fabricated out of single crystal silicon; a Focal Plane Assembly (FPA) made of back-illuminated CCD's capable of detecting X-rays with excellent quantum efficiency; and a composite Telescope Tube that structurally links the MA and FPA. The MA consists of 5,972 silicon mirror segments mounted into five subassemblies called meta-shells. A meta-shell is constructed from an annular central structural shell covered with interlocking layers of mirror segments. This paper describes the requirements, design, and analysis of the XTA subsystems with particular focus on the MA.

NGXO↗