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DOE OSTI2023

Frequency‐Scanning Considerations in Axionlike Dark Matter Spin‐Precession Experiments

Abstract Galactic dark matter may consist of axionlike particles (ALPs) that can be described as an “ultralight bosonic field” oscillating at the ALP Compton frequency. The ALP field can be searched for using nuclear magnetic resonance (NMR), where resonant precession of spins of a polarized sample can be sensitively detected. The ALP mass to which the experiment is sensitive is scanned by sweeping the bias magnetic field. The scanning either results in detection of ALP dark matter or rules out ALP dark matter with sufficiently strong couplings to nuclear spins over the range of ALP masses corresponding to the covered span of Larmor frequencies. In this work, scanning strategies are analyzed with the goal of optimizing the parameter‐space coverage via a proper choice of experimental parameters (e.g., the effective transverse relaxation time).

Zhang, Yuzhe (ORCID:0009000660829066)↗

DOE OSTI2020

Vapor-Cell-Based Atomic Electrometry for Detection Frequencies below 1 kHz

Rydberg-assisted atomic electrometry using alkali-metal atoms contained inside a vacuum environment for detecting external electric fields at frequencies below a few kilohertz has been quite challenging due to the low-frequency electric-field-screening effect that is caused by the alkali-metal atoms adsorbed on the inner surface of the container. In this work, we report a very slow electric-field-screening phenomenon with a timescale up to the order of seconds on a rubidium-vapor cell that is made of monocrystalline sapphire. Furthermore, using this sapphire rubidium-vapor cell with an optically induced, internal bias electric field, we demonstrate vapor-cell-based, low-frequency atomic electrometry that responds to the electric field strength linearly. Limited by the given experimental conditions, this demonstrated atomic electrometer uses an active volume of 11 mm 3 and delivers a spectral noise floor of around 0.34 mV/m √Hz and a 3-dB low cutoff frequency of around 770 Hz inside the vapor cell. This work investigates a regime of vapor-cell-basedatomic electrometry that was seldom studied before, which may enable more applications that use atomicelectric-field-sensing technology.

74 ATOMIC AND MOLECULAR PHYSICS↗

DOE OSTI2025

An analytically tractable marked power spectrum

The increasing precision of cosmology data in the modern era is calling for methods to allow the extraction of non-Gaussian information using tools beyond two-point statistics. The marked power spectrum has the potential to extract beyond two-point information in a computationally efficient way while using much of the infrastructure already available for the power spectrum. In this work we explore the marked power spectrum from an analytical perspective. In particular, we explore a low-order polynomial for the mark that allows us to better control the theoretical uncertainties and we show that with minimal new degrees of freedom the analytical results match measurements from N-body simulations for both the matter field and biased tracers in redshift space. Finally, we show that even within the limited forms of mark that we consider, there are degeneracies that can be broken by inclusion of the marked auto-spectrum or the cross-spectrum with the unmarked field. I n conclusion, we discuss future theoretical developments that would enable us to apply this approach to survey data.

79 ASTRONOMY AND ASTROPHYSICS↗

DOE OSTI2026

Dressed-State Hamiltonian Engineering in a Strongly Interacting Solid-State Spin Ensemble

In quantum science applications, ranging from many-body physics to quantum metrology, dipolar interactions in spin ensembles are often controlled via Floquet engineering. However, this technique typically reduces the interaction strength between spins and effectively weakens the coupling to a target sensing field, limiting the metrological sensitivity. In this Letter, we develop and demonstrate an alternative method that directly tunes the native dipolar interaction in an ensemble of nitrogen-vacancy (NV) centers in diamond, thereby overcoming these limitations inherent to Floquet engineering. Our approach utilizes dressed-state qubit encoding under a bias magnetic field applied perpendicular to the crystal lattice orientation. This method leads to a 3.2× enhancement of the dimensionless coherence parameter JT 2 compared to state-of-the-art Floquet engineering and a 2.6× (8.3 dB) enhanced sensitivity in ac magnetometry. Furthermore, our results provide a powerful Hamiltonian engineering tool for future studies with NV ensembles and other interacting higher-spin (S > $\frac{1}{2}$) systems.

Quantum control↗

DOE OSTI2023

Current‐Driven Switching of Néel Vector of an Antiferromagnetic Insulator Thin Film

Manipulation of antiferromagnetic (AFM) materials as active elements provides a crucial combination of electrical, thermal, and magnetic properties for spintronics. This study shows how the spin current generated in heavy metal is induced by spin‐orbit torque into an adjacent AFM insulator. The bulk unpinned spins of the AFM layer drive a spin current that is transmitted to the top ferromagnet. This mechanism allows the electrical control of the exchange bias, coercive field, and blocking temperature of the system. Further support is provided by a model calculation that quantitatively describes the effect of the spin current injection into the AFM.

antiferromagnetism↗

DOE OSTI2023

Nonvolatile Magnetoelectric Switching of Magnetic Tunnel Junctions with Dipole Interaction

The magnetoelectric effect is technologically appealing because of its ability to manipulate magnetism using an electric field rather than magnetic field or current, thus providing a promising solution for the development of energy-efficient spintronics. Although 180° magnetization switching is vital to spintronic devices, the achievement of 180° magnetization switching via magnetoelectric coupling is still a fundamental challenge. Here, in this work, voltage-driven full resistance switching of a magnetic tunnel junction (MTJ) with dipole interaction on a ferroelectric substrate through switchable parallel/antiparallel magnetization alignment is demonstrated. Parallel magnetization alignment along the y direction is obtained under a bias magnetic field. By rotating the magnetic easy axis via strain-mediated magnetoelectric coupling, the parallel magnetizations in the MTJ reorient to the x axis with opposite paths because of dipole interaction, thus resulting in antiparallel alignment. Moreover, this voltage switching of MTJs is nonvolatile owing to variations in dipole interaction and can be well understood via phase field simulations. The results provide an avenue to realize electrical switching of MTJs and are significant for exploring energy-efficient spintronic devices.

36 MATERIALS SCIENCE↗

DOE OSTI2021

Fusion gain from cylindrical liner-driven implosions of field reversed configurations

MagLIF experiments [M.R. Gomez et al., Phys. Plasmas 22, 056306 (2015)] on Z have demonstrated the basic principles of Magneto-Inertial Fusion (MIF) for wall confined plasmas. Other MIF schemes have been proposed based on the liner implosion of closed field magnetically confined plasmas such as Field Reversed Configurations (FRCs) [T. P. Intrator et al., Phys. Plasmas 15, 042505 (2008)]. We present a semi-analytical model of liner driven FRC implosions that predicts the fusion gain of such systems. The model predicts a fusion gain near unity for an FRC imploded by a liner driven by the Z Machine. We show that FRCs could be formed and imploded at the Z facility using the AutoMag liner concept [S. A. Slutz et al., Phys. Plasmas 24, 012704 (2017)]. Furthermore, an initial bias magnetic field can be supplied by the external magnets used in MagLIF experiments. The reverse field is then supplied by an AutoMag liner, which has helical conducting paths imbedded in an insulating substance. Experiments [Shipley et al., Phys. Plasmas 26, 052705 (2019)] have demonstrated that AutoMag can generate magnetic fields greater than 30 Tesla inside of the liner. We have performed 2D Radiation MHD simulations of the formation and implosion of an FRC, which are in good agreement with the analytical model. The FRC formation process could be studied on small pulsed power machines delivering about 1 MA.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

DOE OSTI2022

Controlling polarization of spintronic THz emitter by remanent magnetization texture

Terahertz (THz) sciences and technologies have contributed to a rapid development of a wide range of applications and expanded the frontiers in fundamental science. Spintronic terahertz emitters offer conceptual advantages since the spin orientation in the magnetic layer can be easily controlled either by the externally applied magnetic field or by the internal magnetic field distribution determined by the specific shape of the magnetic elements. Here, we report a switchable terahertz source based on micropatterned magnetic heterostructures driven by femtosecond laser pulses. We show that the precise tunability of the polarization state is facilitated by the underlying magnetization texture of the magnetic layer that is dictated by the shape of the microstructure. These results also reveal the underlying physical mechanisms of a nonuniform magnetization state on the generation of ultrafast spin currents in the magnetic heterostructures. Our findings indicate that the emission of the linearly polarized THz waves can be switched on and off by saturating the sample using a biasing magnetic field, opening fascinating perspectives for integrated on-chip THz devices with wide-ranging potential applications.

Wu, Weipeng↗

DOE OSTI2021

Exploring Charged Defects in Ferroelectrics by the Switching Spectroscopy Piezoresponse Force Microscopy

Monitoring the charged defect concentration at the nanoscale is of critical importance for both the fundamental science and applications of ferroelectrics. However, up-to-date, high-resolution study methods for the investigation of structural defects, such as transmission electron microscopy, X-ray tomography, etc., are expensive and demand complicated sample preparation. Here, with an example of the lanthanum-doped bismuth ferrite ceramics, a novel method is proposed based on the switching spectroscopy piezoresponse force microscopy (SSPFM) that allows probing the electric potential from buried subsurface charged defects in the ferroelectric materials with a nanometer-scale spatial resolution. When compared with the composition-sensitive methods, such as neutron diffraction, X-ray photoelectron spectroscopy, and local time-of-flight secondary ion mass spectrometry, the SSPFM sensitivity to the variation of the electric potential from the charged defects is shown to be equivalent to less than 0.3 at% of the defect concentration. Additionally, the possibility to locally evaluate dynamics of the polarization screening caused by the charged defects is demonstrated, which is of significant interest for further understanding defect-mediated processes in ferroelectrics.

42 ENGINEERING↗

DOE OSTI2022

Interfacial antiferromagnetic phase induced two-step magnetization reversal in PbZr 0.52 Ti 0.48 O3/La 0.67 Sr 0.33 MnO 3 superlattices

Artificial multiferroic heterostructures have recently attracted much interests due to the demonstrated magnetoelectric coupling (MEC) and unique functionalities, promising a tantalizing perspective of novel applications in next-generation electronic, memory, sensor, and energy harvesting technologies. Herein, we report a two-step magnetization reversal in PbZr 0.52 Ti 0.48 O 3 /La 0.67 Sr 0.33 MnO 3 (PZT/LSMO) superlattices, which originates from the strongly entangled strain-, ferroelectric (FE)-polarization-, and exchange-dependent effects. Specifically, the preferential occupancy of the in-plane Mn d x 2 -y 2 orbitals is triggered via the collective effects of the large tensile strain and FE polarization, giving rise to an interfacial antiferromagnetic (AFM) layer with strong AFM anisotropy. The strong spin exchange coupling between the AFM layer and the adjacent ferromagnetic (FM) layer facilitates the magnetic stratification of the FM layer, leading to two coercivities, i.e., two-step magnetization reversal. Meanwhile, a sizeable exchange bias (EB) field is induced. The emerged two-step magnetization reversal concomitant with the pronounced EB phenomenon should be a signature of an enhanced MEC in PZT/LSMO superlattices. Finally, our results will stimulate further interests in multiferroic superlattices in applications of multiferroic-based devices.

36 MATERIALS SCIENCE↗

DOE OSTI2022

Direct probing of strong magnon–photon coupling in a planar geometry

We demonstrate direct probing of strong magnon–photon coupling using Brillouin light scattering (BLS) spectroscopy in a planar geometry. The magnonic hybrid system comprises a split-ring resonator loaded with epitaxial yttrium iron garnet thin films of 200 nm and 2.46 μm thickness. Here, the BLS measurements are combined with microwave spectroscopy measurements where both biasing magnetic field and microwave excitation frequency are varied. The cooperativity for the 200 nm-thick YIG films is 1.1, and larger cooperativity of 29.1 is found for the 2.46 μm-thick YIG film. We show that BLS is advantageous for probing the magnonic character of magnon–photon polaritons, while microwave absorption is more sensitive to the photonic character of the hybrid excitation. A miniaturized, planar device design is imperative for the potential integration of magnonic hybrid systems in future coherent information technologies, and our results are a first stepping stone in this regard. Furthermore, successfully detecting the magnonic hybrid excitation by BLS is an essential step for the up-conversion of quantum signals from the microwave to the optical regime in hybrid quantum systems.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

DOE OSTI2024

Intrinsic exchange biased anomalous Hall effect in an uncompensated antiferromagnet MnBi 2 Te 4

Achieving spin-pinning at the interface of hetero-bilayer ferromagnet/antiferromagnet structures in conventional exchange bias systems can be challenging due to difficulties in interface control and the weakening of spin-pinning caused by poor interface quality. In this work, we propose an alternative approach to stabilize the exchange interaction at the interface of an uncompensated antiferromagnet by utilizing a gradient of interlayer exchange coupling. We demonstrate this exchange interaction through a designed field training protocol in the odd-layer topological antiferromagnet MnBi 2 Te 4 . Our results reveal a remarkable field-trained exchange bias of up to ~ 400 mT, which exhibits high repeatability and can be easily reset by a large training field. Notably, this field-trained exchange bias effect persists even with zero-field initialization, presenting a stark contrast to the traditional field-cooled exchange bias. The highly tunable exchange bias observed in this single antiferromagnet compound, without the need for an additional magnetic layer, provides valuable insight into the exchange interaction mechanism. These findings pave the way for the systematic design of topological antiferromagnetic spintronics.

36 MATERIALS SCIENCE↗

DOE OSTI2020

Capturing Deuteration Effects in a Molecular Mechanics Force Field: Deuterated THF and the THF–Water Miscibility Gap

Deuteration is a common chemical modification used in conjunction with experiments such as neutron scattering, NMR, and Fourier-transform infrared for the study of molecular systems. Under the Born–Oppenheimer (BO) approximation, while the underlying potential energy surface remains unchanged by isotopic substitutions, isotopic substitution still alters intramolecular vibrations, which in turn may alter intermolecular interactions. Molecular mechanics (MM) force fields used in classical molecular dynamics simulations are assumed to represent local approximations of the BO potential energy surfaces, and hence, MD simulations using simple isotopic mass substitutions should capture BO-compatible isotope effects. However, standard MM force-field parameterizations do not directly fit to the local harmonic quantum mechanical (QM) Hessian that describes the BO surface, but rather to QM normal-modes and/or mass-dependent internal-coordinate derived distortion energies. In this study, using tetrahydrofuran (THF)–water mixtures as our model system, we show that not only does a simple mass-substitution approach fail to capture an experimentally characterized deuteration effect (the loss of the closed-loop miscibility gap associated with the complete deuteration of THF) but also it is necessary to generate new MM force-field parameters that correctly describe isotopic dependent vibrations to capture the experimental deuteration effect. We show that the origin of this failure is a result of using mass-dependent features to fit the THF MM force field, which unintentionally biases the bonded terms of the force field to represent only the isotopologue used during the original force-field parameterization. In addition, we make use of our isotopologue-corrected force field for D 8 THF to examine the molecular origins of the isotope-dependent loss of the THF–water miscibility gap.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

DOE OSTI2021

Excitons in Bilayer MoS 2 Displaying a Colossal Electric Field Splitting and Tunable Magnetic Response

van der Waals heterostructures composed of transition metal dichalcogenide monolayers (TMDCs) are characterized by their truly rich excitonic properties which are determined by their structural, geometric, and electronic properties: In contrast to pure monolayers, electrons and holes can be hosted in different materials, resulting in highly tunable dipolar many-particle complexes. However, for genuine spatially indirect excitons, the dipolar nature is usually accompanied by a notable quenching of the exciton oscillator strength. Via electric and magnetic field dependent measurements, we demonstrate that a slightly biased pristine bilayer MoS 2 hosts strongly dipolar excitons, which preserve a strong oscillator strength. We scrutinize their giant dipole moment, and shed further light on their orbital and valley physics via bias-dependent magnetic field measurements.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗

DOE OSTI2025

Zero-bias conductance peaks at zero applied magnetic field due to stray fields from integrated micromagnets in hybrid nanowire quantum dots

Many recipes for realizing topological superconductivity rely on broken time-reversal symmetry, which is often attained by applying a substantial external magnetic field. Alternatively, using magnetic materials can offer advantages through low-field operation and design flexibility on the nanoscale. Mechanisms for lifting spin degeneracy include exchange coupling, spin-dependent scattering, spin injection – all requiring direct contact between the bulk or induced superconductor and a magnetic material. Here, we implement locally broken time-reversal symmetry through dipolar coupling from nearby micromagnets to superconductor-semiconductor hybrid nanowire devices. Josephson supercurrent is hysteretic due to micromagnets switching. At or around zero external magnetic field, we observe an extended presence of Andreev bound states near zero voltage bias. We also show a zero-bias peak plateau of a non-quantized value. Our findings largely reproduce earlier results where similar effects were presented in the context of topological superconductivity in a homogeneous wire, and attributed to more exotic time-reversal breaking mechanisms [Nat. Phys. 17, 43 (2020)]. In contrast, our stray field profiles are not designed to create Majorana modes, and our data are compatible with a straightforward interpretation in terms of trivial states in quantum dots. At the same time, the use of micromagnets in hybrid superconductor-semiconductor devices shows promise for future experiments on topological superconductivity.

Jiang, Luyao [Univ. of Pittsburgh, PA (United Stat↗

DOE OSTI2021

Simulation and Modeling of Time-Resolved X-Ray Detector for the Saturn Accelerator

In this work, we present the technology-aided computer design (TCAD) device simulation and modeling of a silicon p-i-n diode for detecting time-dependent X-ray radiation. We show that the simulated forward and reverse breakdown current–voltage characteristics agree well with the measured data under nonradiation environment by only calibrating carrier lifetimes for the forward bias case and avalanche model critical fields for the reverse bias condition. Using the calibrated parameters and other nominal material properties, we simulated the radiation responses of the p-i-n diode and compared with experimental data when the diode was exposed to X-ray radiation at Sandia’s Saturn facility and the Idaho State University (ISU) TriMeV facility. For Saturn’s Gaussian dose-rate pulses, we show three findings from TCAD simulations. First, the simulated photocurrents are in excellent agreement with the measured data for two dose-rate pulses with peak values of 1.16×10 10 and 1.88×10 10 rad(Si)/s. Second, the simulation results of high dose-rate pulses predict increased delayed photocurrents with longer time tails in the diode electrical responses due to excess carrier generation. Third, simulated peak values of diode radiation responses versus peak dose rates at different bias conditions provide useful guidance to determine the dose-rate range that the p-i-n diode can reliably detect in experiment. For TriMeV’s non-Gaussian dose-rate pulse, our simulated diode response is in decent agreement with the measured data without further calibration. We also studied the effects of device geometry, recombination process, and dose-rate enhancement via TCAD simulations to understand the higher measured response in the time after the peak dose-rate radiation for the p-i-n diode exposed to TriMeV irradiation.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

DOE OSTI2022

A unified thermionic and thermionic-field emission (TE–TFE) model for ideal Schottky reverse-bias leakage current

We present a unified thermionic emission (TE) and thermionic-field emission (TFE) model for the ideal reverse-bias leakage current in Schottky junctions. The unified TE–TFE analytical model advances upon previous analytical TFE models by Murphy–Good and Padovani–Stratton, which are the two most widely adopted models by the community, in two major aspects: (i) the applicability of the TFE expression therein is extended to near-zero surface electric fields by an error-function correction, allowing for the calculation of the total current by a nontrivial sum of TE (over-the-barrier current) and TFE (below-the-barrier current) contributions; therefore, an accurate description of the TE-to-TFE transition region is captured analytically for the first time; (ii) image-force lowering is considered with much-simpler correction terms. Comparisons with the reference numerical model show that the unified TE–TFE model has excellent accuracy, as well as a 10 000× reduction in computation time. The unified model is further tested against experimental data from Schottky barrier diodes based on Si, 4H-SiC, GaN, and β-Ga 2 O 3 , revealing accurate extractions of barrier heights and correct descriptions of the ideal reverse leakage characteristics. With the extended applicable range, improved accuracy, and computational efficiency, the unified TE–TFE model is highly valuable for the design and analysis of devices based on Schottky junctions, as well as for potential integration in technology computer-aided design (TCAD) tools.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

DOE OSTI2023

Experimental and Computational Investigation of Shaped Film Cooling Holes Designed to Minimize Inlet Separation

Abstract Film cooling is used to protect turbine components from the extreme temperatures by ejecting coolant through arrays of holes to create an air buffer from the hot combustion gases. Limitations in traditional machining meant film cooling holes universally have sharp inlets, which create separation regions at the hole entrance. The present study uses experimental and computational data to show that these inlet separation are a major cause of performance variation in crossflow fed film cooling holes. Three-hole designs were experimentally tested by independently varying the coolant velocity ratio (VR) and the coolant channel velocity ratio (VRc) to isolate the effects of crossflow on hole performance. Leveraging additive manufacturing (AM) technologies, the addition of a 0.25D radius fillet to the inlet of a 7-7-7 shaped hole is shown to significantly improve diffuser usage and significantly reduce variation in performance with VRc. A second AM design used a very large radius of curvature inlet to reduce biasing caused by the inlet crossflow. Experiments showed that this “swept” hole design did minimize biasing of the coolant flow to one side of the shaped hole, and it significantly reduced variations due to varying VRc. RANS simulations at six VR and three VRc conditions were made for each geometry to better understand how the new geometries changed the velocity field within the hole. The sharp and rounded inlets were seen to have very similar tangential velocity fields and jet biasing. Both AM inlets created more uniform, slower velocity fields entering the diffuser. The results of this article indicate that large improvements in film cooling performance can be found by leveraging AM technology.

Engineering↗