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At least 73 records · Page 4

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DOE OSTI2020

Revealing Three-Dimensional Morphology in Nanoporous Gold Using Three-Dimensional X-Ray Fresnel Coherent Diffractive Imaging Tomography

Nanoporous metals fabricated by dealloying have a unique bi-continuous, sponge-like porous structure with ultra-high surface area. The unique properties of these materials, especially nanoporous gold, have numerous potential applications in sensors and actuators and in energy-related applications such as catalytic materials, super-capacitors, and battery supports. The degree of porosity and size of the metal ligaments are critical parameters that determine many properties and thus govern the functionalities of nanoporous metals in many applications including energy storage and conversion. Additionally, we used Fresnel coherent diffractive imaging combined with tomographic reconstruction to quantify the nanoscale three-dimensional spatial distribution and homogeneity of the porosity and ligament size within a bulk sample of nanoporous gold. The average porosity and its standard deviation along the axial direction through the sample were determined, as well as the characteristic feature size and its standard deviation. The result shows that free corrosion is an effective way to create homogeneous nanoporous metals with sample sizes on the order of 1 µm.

36 MATERIALS SCIENCE↗

DOE OSTI2021

A portable X-pinch design for x-ray diagnostics of warm dense matter

We describe the design and x-ray emission properties (temporal, spatial, and spectral) of Dry Pinch I, a portable X-pinch driver developed at Imperial College London. Dry Pinch I is a direct capacitor discharge device, 300 × 300 × 700 mm3 in size and ∼50 kg in mass, that can be used as an external driver for x-ray diagnostics in high-energy-density physics experiments. Among key findings, the device is shown to reliably produce 1.1 ± 0.3 ns long x-ray bursts that couple ∼50 mJ of energy into photon energies from 1 to 10 keV. The average shot-to-shot jitter of these bursts is found to be 10 ± 4.6 ns using a combination of x-ray and current diagnostics. The spatial extent of the x-ray hot spot from which the radiation emanates agrees with previously published results for X-pinches—suggesting a spot size of 10 ± 6 µm in the soft energy region (1–10 keV) and 190 ± 100 µm in the hard energy region (>10 keV). These characteristics mean that Dry Pinch I is ideally suited for use as a probe in experiments driven in the laboratory or at external facilities when more conventional sources of probing radiation are not available. At the same time, this is also the first detailed investigation of an X-pinch operating reliably at current rise rates of less than 1 kA/ns.

47 OTHER INSTRUMENTATION↗

NASA NTRS1991

Makeup and uses of a basic magnet laboratory for characterizing high-temperature permanent magnets

A set of instrumentation for making basic magnetic measurements was assembled in order to characterize high intrinsic coercivity, rare earth permanent magnets with respect to short term demagnetization resistance and long term aging at temperatures up to 300 C. The major specialized components of this set consist of a 13 T peak field, capacitor discharge pulse magnetizer; a 10 in. pole size, variable gap electromagnet; a temperature controlled oven equipped with iron cobalt pole piece extensions and a removable paddle that carries the magnetization and field sensing coils; associated electronic integrators; and sensor standards for field intensity H and magnetic moment M calibration. A 1 cm cubic magnet sample, carried by the paddle, fits snugly between the pole piece extensions within the electrically heated aluminum oven, where fields up to 3.2 T can be applied by the electromagnet at temperatures up to 300 C. A sample set of demagnetization data for the high energy Sm2Co17 type of magnet is given for temperatures up to 300 C. These data are reduced to the temperature dependence of the M-H knee field and of the field for a given magnetic induction swing, and they are interpreted to show the limits of safe operation.

Niedra, Janis M.↗

NASA NTRS2004

COTS Ceramic Chip Capacitors: An Evaluation of the Parts and Assurance Methodologies

Commercial-Off-The-Shelf (COTS) multilayer ceramic chip capacitors (MLCCs) are continually evolving to reduce physical size and increase volumetric efficiency. Designers of high reliability aerospace and military systems are attracted to these attributes of COTS MLCCs and would like to take advantage of them while maintaining the high standards for long-term reliable operation they are accustomed io when selecting military qualified established reliability (MIL-ER) MLCCs. However, MIL-ER MLCCs are not available in the full range of small chip sizes with high capacitance as found in today's COTS MLCCs. The objectives for this evaluation were to assess the long-term performance of small case size COTS MLCCs and to identify effective, lower-cost product assurance methodologies. Fifteen (15) lots of COTS X7R dielectric MLCCs from four (4) different manufacturers and two (2) MIL-ER BX dielectric MLCCs from two (2) of the same manufacturers were evaluated. Both 0805 and 0402 chip sizes were included. Several voltage ratings were tested ranging from a high of 50 volts to a low of 6.3 volts. The evaluation consisted of a comprehensive screening and qualification test program based upon MIL-PRF-55681 (i.e., voltage conditioning, thermal shock, moisture resistance, 2000-hour life test, etc.). In addition, several lot characterization tests were performed including Destructive Physical Analysis (DPA), Highly Accelerated Life Test (HALT) and Dielectric Voltage Breakdown Strength. The data analysis included a comparison of the 2000-hour life test results (used as a metric for long-term performance) relative to the screening and characterization test results. Results of this analysis indicate that the long-term life performance of COTS MLCCs is variable -- some lots perform well, some lots perform poorly. DPA and HALT were found to be promising lot characterization tests to identify substandard COTS MLCC lots prior to conducting more expensive screening and qualification tests. The results indicate that lot- specific screening and qualification are still recommended for high reliability applications. One significant and concerning observation is that MIL- type voltage conditioning (100 hours at twice rated voltage, 125 C) was not an effective screen in removing infant mortality parts for the particular lots of COTS MLCCs evaluated.

Brusse, Jay A.↗

NASA NTRS2012

Some Aspects of the Failure Mechanisms in BaTiO3-Based Multilayer Ceramic Capacitors

The objective of this presentation is to gain insight into possible failure mechanisms in BaTiO3-based ceramic capacitors that may be associated with the reliability degradation that accompanies a reduction in dielectric thickness, as reported by Intel Corporation in 2010. The volumetric efficiency (microF/cm3) of a multilayer ceramic capacitor (MLCC) has been shown to not increase limitlessly due to the grain size effect on the dielectric constant of ferroelectric ceramic BaTiO3 material. The reliability of an MLCC has been discussed with respect to its structure. The MLCCs with higher numbers of dielectric layers will pose more challenges for the reliability of dielectric material, which is the case for most base-metal-electrode (BME) capacitors. A number of MLCCs manufactured using both precious-metal-electrode (PME) and BME technology, with 25 V rating and various chip sizes and capacitances, were tested at accelerated stress levels. Most of these MLCCs had a failure behavior with two mixed failure modes: the well-known rapid dielectric wearout, and so-called 'early failures." The two failure modes can be distinguished when the testing data were presented and normalized at use-level using a 2-parameter Weibull plot. The early failures had a slope parameter of Beta >1, indicating that the early failures are not infant mortalities. Early failures are triggered due to external electrical overstress and become dominant as dielectric layer thickness decreases, accompanied by a dramatic reduction in reliability. This indicates that early failures are the main cause of the reliability degradation in MLCCs as dielectric layer thickness decreases. All of the early failures are characterized by an avalanche-like breakdown leakage current. The failures have been attributed to the extrinsic minor construction defects introduced during fabrication of the capacitors. A reliability model including dielectric thickness and extrinsic defect feature size is proposed in this presentation. The model can be used to explain the Intel-reported reliability degradation in MLCCs with respect to the reduction of dielectric thickness. It can also be used to estimate the reliability of a MLCC based on its construction and microstructure parameters such as dielectric thickness, average grain size, and number of dielectric layers. Measures for preventing early failures are also discussed in this document.

Liu, David Donhang↗

NASA NTRSDate not supplied

Stress Testing of Chip Aluminum Polymer Capacitors

Layered aluminum polymer capacitors (APC) may be viable replacements to current chip tantalum capacitors due to their lower ESR, weight, and smaller size. So far, there is a lack of information regarding the reliability of these parts. Available technical literature is mostly related to the effect on humidity. Although APCs have a limited moisture resistance, it may be contained to the level sufficient for space applications. In this work, seven types of commercial APCs manufactured by four vendors and rated to voltages from 6.3 to 35 V were used to evaluate reliability of the parts under environmental stresses and highly accelerated life tests. Characteristics of the parts, including breakdown voltages, the level of anomalous charging currents (ACC), capacitance, DF, ESR and leakage currents were measured in the process of storage at high-temperatures (from 100 to 150 °C) and high humidity at 85 °C. Monitored highly accelerated life tests have been carried out at temperatures of 85 °C and 125 °C and voltages varying from 1.2 to 1.9 times the rated voltage. Degradation processes and reliability of APCs have been analyzed and compared to polymer tantalum capacitors.

Alexander Teverovsky↗

NASA NTRS2024

Evaluation of Aluminum Polymer Capacitors for Space Applications

Layered aluminum polymer capacitors (APC) may be viable replacements to currently used chip tantalum capacitors due to their lower ESR, weight, and smaller size. So far, there is a lack of information regarding the reliability of these parts. Available technical literature is mostly related to the effect of humidity. Although APCs have a limited moisture resistance, it may be contained to the level sufficient for space applications. This work analyzes construction and characteristics of seven types of commercial APCs manufactured by four vendors and rated to voltages from 6.3 to 35 V were analyzed. Their reliability under environmental stresses and highly accelerated life tests was assessed in the range of temperatures and voltages to determine reliability acceleration factors. For this purpose, characteristics of the parts, including breakdown voltages, the level of anomalous charging currents (ACC), capacitance, DF, ESR and leakage currents were measured in the process of storage at high-temperatures (from 100 to 150 °C) and high humidity at 85 °C. Monitored highly accelerated life tests have been carried out at temperatures of 85 °C and 125 °C and voltages varying from 1.2 to 1.9 times the rated voltage. Degradation processes and reliability of APCs have been compared to polymer tantalum capacitors.

Alexander A Teverovsky↗

DOE OSTI2023

Enhanced Switching Reliability of Hf 0.5 Zr 0.5 O 2 Ferroelectric Films Induced by Interface Engineering

Ferroelectric materials have been widely researched for applications in memory and energy storage. Among these materials and benefiting from their excellent chemical compatibility with complementary metal–oxide–semiconductor (CMOS) devices, hafnia-based ferroelectric thin films hold great promise for highly scaled semiconductor memories, including nonvolatile ferroelectric capacitors and transistors. However, variation in the switched polarization of this material during field cycling and a limited understanding of the responsible mechanisms have impeded their implementation in technology. Here, we show that ferroelectric Hf 0.5 Zr 0.5 O 2 (HZO) capacitors that are nearly free of polarization “wake-up”─a gradual increase in switched polarization as a function of the number of switching cycles─can be achieved by introducing ultrathin HfO 2 buffer layers at the HZO/electrodes interface. High-resolution transmission electron microscopy (HRTEM) reveals crystallite sizes substantially greater than the film thickness for the buffer layer capacitors, indicating that the presence of the buffer layers influences the crystallization of the film (e.g., a lower ratio of nucleation rate to growth rate) during postdeposition annealing. This evidently promotes the formation of a polar orthorhombic (O) phase in the as-fabricated buffer layer samples. Synchrotron X-ray diffraction (XRD) reveals the conversion of the nonpolar tetragonal (T) phase to the polar orthorhombic (O) phase during electric field cycling in the control (no buffer) devices, consistent with the polarization wake-up observed for these capacitors. The extent of T–O transformation in the nonbuffer samples is directly dependent on the duration over which the field is applied. Here these results provide insight into the role of the HZO/electrodes interface in the performance of hafnia-based ferroelectrics and the mechanisms driving the polarization wake-up effect.

36 MATERIALS SCIENCE↗

DOE OSTI2022

Investigating the dielectric constant of barium titanate in a polymer-matrix nanocomposite

Barium titanate (BTO) is a ferroelectric material used in capacitors because of its high bulk dielectric constant. However, the impact of the size of BTO on its dielectric constant is not yet fully understood and is highly contested. Here, we present an investigation into the dielectric constant of BTO nanoparticles with diameters ranging between 50 and 500 nm. BTO nanoparticles were incorporated into acrylonitrile butadiene styrene and injection molded into parallel plate capacitors, which were used to determine nanocomposite dielectric constants. The dielectric constants of BTO nanoparticles were obtained by combining experimental measurements with computational results from COMSOL simulations of ABS-matrix nanocomposites containing BTO. The dielectric constant of BTO was observed to be relatively constant at nanoparticle diameters as small as 200 nm but sharply declined at smaller nanoparticle sizes. Overall, these results will be useful in the development of improved energy storage and power conditioning systems utilizing BTO nanoparticles.

36 MATERIALS SCIENCE↗

NASA NTRS1983

High frequency, high power capacitor development

A program to develop a special high energy density, high power transfer capacitor to operate at frequency of 40 kHz, 600 V rms at 125 A rms plus 600 V dc bias for space operation. The program included material evaluation and selection, a capacitor design was prepared, a thermal analysis performed on the design. Fifty capacitors were manufactured for testing at 10 kHz and 40 kHz for 50 hours at Industrial Electric Heating Co. of Columbus, Ohio. The vacuum endurance test used on environmental chamber and temperature plate furnished by Maxwell. The capacitors were energized with a special power conditioning apparatus developed by Industrial Electric Heating Co. Temperature conditions of the capacitors were monitored by IEHCo test equipment. Successful completion of the vacuum endurance test series confirmed achievement of the main goal of producing a capacitor or reliable operation at high frequency in an environment normally not hospitable to electrical and electronic components. The capacitor developed compared to a typical commercial capacitor at the 40 kHz level represents a decrease in size and weight by a factor of seven.

White, C. W.↗

NASA NTRS1986

Silicon controlled rectifier polyphase bridge inverter commutated with gate-turn-off thyristor

A polyphase SCR inverter (10) having N switching poles, each comprised of two SCR switches (1A, 1B; 2A, 2B . . . NA, NB) and two diodes (D1B; D1B; D2A, D2B . . . DNA, DNB) in series opposition with saturable reactors (L1A, L1B; L2A, L2B . . . LNA, LNB) connecting the junctions between the SCR switches and diodes to an output terminal (1, 2 . . . 3) is commutated with only one GTO thyristor (16) connected between the common negative terminal of a dc source and a tap of a series inductor (14) connected to the positive terminal of the dc source. A clamp winding (22) and diode (24) are provided, as is a snubber (18) which may have its capacitance (c) sized for maximum load current divided into a plurality of capacitors (C.sub.1, C.sub.2 . . . C.sub.N), each in series with an SCR switch S.sub.1, S.sub.2 . . . S.sub.N). The total capacitance may be selected by activating selected switches as a function of load current. A resistor 28 and SCR switch 26 shunt reverse current when the load acts as a generator, such as a motor while braking.

Edwards, Dean B.↗

NASA NTRS2015

Random Vibration Testing of Advanced Wet Tantalum Capacitors

Advanced wet tantalum capacitors allow for improved performance of power supply systems along with substantial reduction of size and weight of the systems that is especially beneficial for space electronics. Due to launch-related stresses, acceptance testing of all space systems includes random vibration test (RVT). However, many types of advanced wet tantalum capacitors cannot pass consistently RVT at conditions specified in MIL-PRF-39006, which impedes their use in space projects. This requires a closer look at the existing requirements, modes and mechanisms of failures, specifics of test conditions, and acceptance criteria. In this work, different lots of advanced wet tantalum capacitors from four manufacturers have been tested at step stress random vibration conditions while their currents were monitored before, during, and after the testing. It has been shown that the robustness of the parts and their reliability are mostly due to effective self-healing processes and limited current spiking or minor scintillations caused by RVT do not increase the risk of failures during operation. A simple model for scintillations events has been used to simulate current spiking during RVT and optimize test conditions. The significance of scintillations and possible effects of gas generation have been discussed and test acceptance criteria for limited current spiking have been suggested.

cracking↗

NASA NTRS2015

Random Vibration Testing of Advanced Wet Tantalum Capacitors

cracking↗

NASA NTRS2015

Random Vibration Testing of Advanced Wet Tantalum Capacitors

wet tantalum capacitors↗

DOE OSTI2019

Reduced Common-Mode Voltage PWM Scheme for Full-SiC Three-Level Uninterruptible Power Supply With Small DC-Link Capacitors

In this article, a pulsewidth modulation (PWM) scheme for three-level full-SiC uninterruptible power supplies is developed to achieve a high power density. Two key passive components are selected for size reduction of the ac-ac stage: common-mode (CM) EMI filter, and dc-link capacitors. To reduce the CM noise, a new vector combination is proposed based on synchronous switching among three-phases. The proposed combinations align CM voltage (CMV) to be a single pulse per switching period. Owing to the simple shape, CMV cancellation between a three-level rectifier and inverter can be maximally utilized. A transition between the three combinations can control the drift of neutral point voltage. An equivalent carrier-based implementation is developed. Second, a simple algorithm to compensate neutral point voltage fluctuation is proposed both for differential mode (DM) and CM output voltage. Low-order harmonics on three-phase currents and an additional high-frequency CM noise by misaligned switching instant can be eliminated. The proposed compensation can be implemented by a simple correction on carrier slopes and injected zero-sequence voltage. The proposed PWM scheme is verified with 20-kW full-SiC UPS switching at 60 kHz with 140 μF dc-link capacitors.

42 ENGINEERING↗

NASA NTRS1997

Microfabricated Ice-Detection Sensor

Knowledge of ice conditions on important aircraft lift and control surfaces is critical for safe operation. These conditions can be determined with conventional ice-detection sensors, but these sensors are often expensive, require elaborate installation procedures, and interrupt the airflow. A micromachined, silicon-based, flush-mounted sensor which generates no internal heat has been designed, batch fabricated, packaged, and tested. The sensor is capable of distinguishing between an ice-covered and a clean surface. It employs a bulk micromachined wafer with a 7 micrometer-thick, boron-doped, silicon diaphragm which serves as one plate of a parallel-plate capacitor. This is bonded to a second silicon wafer which contains the fixed electrodes, one to drive the diaphragm by application of a voltage, the other to measure the deflection by a change in capacitance. The diaphragm sizes ranged from 1x1 mm to 3x3 mm, and the gap between parallel-plate capacitors is 2 micrometers. A 200 V d.c. was applied to the driving electrode which caused the capacitance to increase approximately 0.6pf, from a nominal capacitance of 0.6pf, when the surface was ice free. After the sensor was cooled below the freezing point of water, the same voltage range was applied to the drive electrode. The capacitance increased by the same amount. Then a drop of water was placed over the diaphragm and allowed to freeze. This created an approximately 2mm-thick ice layer. The applied 200V d.c. produced no change in capacitance, confirming that the diaphragm was locked to the ice layer. Since the sensor uses capacitive actuation, it uses very little power and is an ideal candidate for inclusion in a wireless sensing system.

DeAnna, Russell G.↗

NASA NTRS2014

Evaluation of Ferrite Chip Beads as Surge Current Limiters in Circuits with Tantalum Capacitors

Limiting resistors are currently required to be connected in series with tantalum capacitors to reduce the risk of surge current failures. However, application of limiting resistors decreases substantially the efficiency of the power supply systems. An ideal surge current limiting device should have a negligible resistance for DC currents and high resistance at frequencies corresponding to transients in tantalum capacitors. This work evaluates the possibility of using chip ferrite beads (FB) as such devices. Twelve types of small size FBs from three manufacturers were used to evaluate their robustness under soldering stresses and at high surge current spikes associated with transients in tantalum capacitors. Results show that FBs are capable to withstand current pulses that are substantially greater than the specified current limits. However, due to a sharp decrease of impedance with current, FBs do not reduce surge currents to the required level that can be achieved with regular resistors.

surge current testing↗

NASA NTRS2017

Reliability Issues with PME and BME Ceramic Capacitors

Exposure of chip MnO2 tantalum capacitors to humid environments might result in increased ESR, leakage currents, and first turn-on failures. However, there is a lack of literature data on the effect of moisture on reverse bias behavior of the parts. The presence of moisture can also result in pop-corning when a high water vapor pressure develops when moisture absorbed in pores of tantalum slugs vaporizes instantly during soldering process resulting in damage to capacitors. A study of kinetics of moisture ingress to and release from active elements of capacitors would allow a better understanding of degradation mechanisms and is important for preventing failures. In this work, a technique for investigation of moisture sorption and desorption in solid chip tantalum capacitors that employs tantalum slugs as a humidity sensor have been developed and kinetics of the process analyzed for different types of capacitors at temperatures from room to 125 C. A model that relates diffusion characteristics of polymer cases and size of the slugs to characteristic times of moisture sorption has been developed. A strong effect of moisture on long-term degradation of reverse bias currents in MnO2 cathode capacitors has been demonstrated and physical mechanisms discussed.

degradation↗