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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 73 records · Page 4
All sourcesNASA NTRSDOE OSTI
NASA NTRS2000

Aerosol and Plasma Measurements in Noctilucent Clouds

The purpose of this project was to develop rocket-borne probes to detect charged aerosol layers in the mesosphere. These include sporadic E layers, which have their origin in meteoric dust, and noctilucent clouds, which form in the arctic summer and are composed of ice crystals. The probe being developed consists of a charge collecting patch connected to a sensitive electrometer which measures the charge deposited on the patch by impacting aerosols. The ambient electrons and light ions in the mesosphere are prevented from being collected by a magnetic field. The magnetic force causes these lighter particles to turn so that they miss the collecting patch.

Robertson, Scott↗
NASA NTRS2014

Novel Materials, Processing and Device Technologies for Space Exploration with Potential Dual-Use Applications

We highlight results of a broad spectrum of efforts on lower-temperature processing of nanomaterials, novel approaches to energy conversion, and environmentally rugged devices. Solution-processed quantum dots of copper indium chalcogenide semiconductors and multiwalled carbon nanotubes from lower-temperature spray pyrolysis are enabled by novel (precursor) chemistry. Metal-doped zinc oxide (ZnO) nanostructured components of photovoltaic cells have been grown in solution at low temperature on a conductive indium tin oxide substrate. Arrays of ZnO nanorods can be templated and decorated with various semiconductor and metallic nanoparticles. Utilizing ZnO in a more broadly defined energy conversion sense as photocatalysts, unwanted organic waste materials can potentially be repurposed. Current efforts on charge carrier dynamics in nanoscale electrode architectures used in photoelectrochemical cells for generating solar electricity and fuels are described. The objective is to develop oxide nanowire-based electrode architectures that exhibit improved charge separation, charge collection and allow for efficient light absorption. Investigation of the charge carrier transport and recombination properties of the electrodes will aid in the understanding of how nanowire architectures improve performance of electrodes for dye-sensitized solar cells. Nanomaterials can be incorporated in a number of advanced higher-performance (i.e. mass specific power) photovoltaic arrays. Advanced technologies for the deposition of 4H-silicon carbide are described. The use of novel precursors, advanced processing, and process studies, including modeling are discussed from the perspective of enhancing the performance of this promising material for enabling technologies such as solar electric propulsion. Potential impact(s) of these technologies for a variety of aerospace applications are highlighted throughout. Finally, examples are given of technologies with potential spin-offs for dual-use or terrestrial applications.

solid state devices↗
NASA NTRS2015

Novel Materials, Processing, and Device Technologies for Space Exploration with Potential Dual-Use Applications

We highlight results of a broad spectrum of efforts on lower-temperature processing of nanomaterials, novel approaches to energy conversion, and environmentally rugged devices. Solution-processed quantum dots of copper indium chalcogenide semiconductors and multi-walled carbon nanotubes from lower-temperature spray pyrolysis are enabled by novel (precursor) chemistry. Metal-doped zinc oxide (ZnO) nanostructured components of photovoltaic cells have been grown in solution at low temperature on a conductive indium tin oxide substrate. Arrays of ZnO nanorods can be templated and decorated with various semiconductor and metallic nanoparticles. Utilizing ZnO in a more broadly defined energy conversion sense as photocatalysts, unwanted organic waste materials can potentially be re-purposed. Current efforts on charge carrier dynamics in nanoscale electrode architectures used in photoelectrochemical cells for generating solar electricity and fuels are described. The objective is to develop oxide nanowire-based electrode architectures that exhibit improved charge separation, charge collection and allow for efficient light absorption. Investigation of the charge carrier transport and recombination properties of the electrodes will aid in the understanding of how nanowire architectures improve performance of electrodes for dye-sensitized solar cells. Nanomaterials can be incorporated in a number of advanced higher-performance (i.e. mass specific power) photovoltaic arrays. Advanced technologies for the deposition of 4H-silicon carbide are described. The use of novel precursors, advanced processing, and process studies, including modeling are discussed from the perspective of enhancing the performance of this promising material for enabling technologies such as solar electric propulsion. Potential impact(s) of these technologies for a variety of aerospace applications are highlighted throughout. Finally, examples are given of technologies with potential spin-offs for dual-use or terrestrial applications.

thin films↗
NASA NTRS1984

Imaging X-ray spectrometer

An X-ray spectrometer for providing imaging and energy resolution of an X-ray source is described. This spectrometer is comprised of a thick silicon wafer having an embedded matrix or grid of aluminum completely through the wafer fabricated, for example, by thermal migration. The aluminum matrix defines the walls of a rectangular array of silicon X-ray detector cells or pixels. A thermally diffused aluminum electrode is also formed centrally through each of the silicon cells with biasing means being connected to the aluminum cell walls and causes lateral charge carrier depletion between the cell walls so that incident X-ray energy causes a photoelectric reaction within the silicon producing collectible charge carriers in the form of electrons which are collected and used for imaging.

Grant, P. A.↗
NASA NTRS2018

International Space Station Spacecraft Charging Environments: Modeling, Measurement and Implications for Future Human Space Flight Programs

Spacecraft charging analysis and migration is an interdisciplinary subject combining aspects of electrostatics, plasma physics, ionizing radiation, and materials science, as well as electronic system electromagnetic interference and compatibility (EMI/EMC) effects. Spacecraft charging hazards are caused by the accumulation of electrical charge on spacecraft and spacecraft components produced by interactions with space plasmas, energetic charged particles, and solar UV photons as well as spacecraft electrical power and propulsion systems operations. Spacecraft charging hazard effects include both hard and soft avionics and electrical power system anomalies and have led to the partial or complete loss of numerous spacecraft. The International Space Station (ISS) orbital altitude and inclination (~400 km and 51.6o) determined the dominant natural environment factors affecting ISS spacecraft charging; high speed flight through the geomagnetic field and electrical power system interaction with the cold, high-density ionospheric plasma. In addition ISS is exposed to energetic auroral electrons at high latitude. In this paper we present the results of ISS spacecraft charging modeling and measurements and compare the measurements with numerical modeling of ISS charging processes. ISS is a large metallic structure and flight through the geomagnetic field at orbital speed dominates ISS charging. Collection of ionospheric electrons by the large 160V PV arrays is the next largest contributor. Charging by auroral electrons is detectable but makes a relatively minor contribution. Finally we report the observation of short duration (~ 1 sec) rapid charging peaks associated with shunt/un-shunt operations of the 160V PV arrays, a phenomena not predicted before flight. ISS spacecraft charging environments are radically different from those encountered at higher altitudes in Earth?s magnetosphere and in cis-Lunar space. We present a brief review of those charging environments and an assessment of the applicability of ISS spacecraft charging management and experience to future human spaceflight programs beyond LEO.

Koontz, Steven L.↗
NASA NTRS1985

Potential of CCDs for UV and X-ray plasma diagnostics

A program is under way to develop charge-coupled device (CCD) sensors for space-based X-ray astronomy imaging spectrometers. To date, laboratory line-emission spectra have been acquired throughout the range of 277 to 8000 eV (carbon through copper K-alpha emission) and CCD sensitivity has been demonstrated throughout the range of 1.1 through 8000 eV. Image resolution is excellent, limited almost entirely by the 15 micron pixel size. These results are presented and specialized techniques are described which permit such low energy response, high spectral resolution, and efficient charge collection. Finally, analysis is presented of one particular CCD characteristic which currently limits UV and X-ray performance: charge diffusion.

Janesick, J. R.↗
NASA NTRS2011

Simulation and Measurement of Absorbed Dose from 137 Cs Gammas Using a Si Timepix Detector

The TimePix readout chip is a hybrid pixel detector with over 65k independent pixel elements. Each pixel contains its own circuitry for charge collection, counting logic, and readout. When coupled with a Silicon detector layer, the Timepix chip is capable of measuring the charge, and thus energy, deposited in the Silicon. Measurements using a NIST traceable 137Cs gamma source have been made at Johnson Space Center using such a Si Timepix detector, and this data is compared to simulations of energy deposition in the Si layer carried out using FLUKA.

Stoffle, Nicholas↗
NASA NTRS1984

Annual Conference on Nuclear and Space Radiation Effects, 21st, Colorado Springs, CO, July 23-25, 1984, Proceedings

Radiation effects on electronic systems and devices (particularly spacecraft systems) are examined with attention given to such topics as radiation transport, energy deposition, and charge collection; single-event phenomena; basic mechanisms of radiation effects in structures and materials; and EMP phenomena. Also considered are radiation effects in integrated circuits, spacecraft charging and space radiation effects, hardness assurance for devices and systems, and SGEMP/IEMP phenomena.

Winokur, P. S.↗
NASA NTRS1976

Quadrant anode image sensor

A position-sensitive event-counting electronic readout system for microchannel plates (MCPs) is described that offers the advantages of high spatial resolution and fast time resolution. The technique relies upon a four-quadrant electron-collecting anode located behind the output face of the microchannel plate, so that the electron cloud from each detected event is partly intercepted by each of the four quadrants. The relative amounts of charge collected by each quadrant depend on event position, permitting each event to be localized with two ratio circuits. A prototype quadrant anode system for ion, electron, and extreme ultraviolet imaging is described. The spatial resolution achieved, about 10 microns, allows individual MCP channels to be distinguished.

Lampton, M.↗
NASA NTRS1999

Preliminary Results from Small-Pixel CdZnTe and CdTe Arrays

We have evaluated 2 small-pixel (0.75 mm) Cadmium-Zinc-Telluride arrays, and one Cadmium-Telluride array, all fabricated for MSFC by Metorex (Finland) and Baltic Science Institute (Riga, Latvia). Each array was optimized for operating temperature and collection bias. It was then exposed to Cadmium-109 and Iron-55 laboratory isotopes, to measure the energy resolution for each pixel and was then scanned with a finely-collimated x-ray beam, of width 50 micron, to examine pixel to pixel and inter-pixel charge collections efficiency. Preliminary results from these array tests will be presented.

Ramsey, B. D.↗
NASA NTRS1994

Three-dimensional numerical simulation of current collection by a probe in a magnetized plasma

A three-dimensional numerical model for current collection in a magnetized plasma is reported. The model is based on an electrostatic particle-in-cell code. The model yields self-consistent sheath structure including distributions of plasma and the electric potential around the body and the collection of electrons. The analytical theory of current collection by a body in a magnetized plasma yields an upper bound for the collected current determined by the conservation of energy and canonical angular momentum. The theory shows that the collected charged particles come from a cylindrical volume aligned with the magnetic shadow of the body; the maximum radius r(sub o) of this volume is determined by the body size, body potential, and the ambient magnetic field. This theory does not deal with the sheath structure around the body. The condition for the actual current to approach the upper-bound value has been a matter of debate. Our simulations reveal when and why the collected current becomes equal to its upper-bound value. Sheath size in the radial direction perpendicular to the axial ambient magnetic field is determined by the current-limiting radius r(sub o). Our simulation yields time-average current in good agreement with its upper bound. This feature of the current collection is explained as follows: Once electrons enter the sheath, some of them are freely accelerated perpendicular to the magnetic field because they are demagnetized by the large gradients in the perpendicular electric fields. Simulations show a large perpendicular acceleration, producing perpendicular energy as large as that determined by the potential on the body, especially in the region where perpendicular electric fields (E perpendicular) are the strongest. An analysis shows that the demagnetization of electrons occurs above a threshold potential on the body. This threshold condition follows from the breakdown of the adiabaticity of the electron dynamics inside the sheath.

Singh, Nagendra↗
NASA NTRS2011

Charging and Subsequent Dissipation of a Rover Wheel in the Lunar Polar Regions

As a roving vehicle moves along the lunar surface, electric charge will build up through tribo-charging. This charge collected by the roving object will have a dissipative path to either the surface or the ambient plasma, depending upon which path is most conductive. At the lunar terminator region and into nightside regions, the surface is very cold and becomes a very poor conductor. leaving the plasma as the dominant remediating current for dissipation. However, within lunar craters, even plasma currents become substantially reduced which then greatly increases electric 'dissipation times, This work will involve the advancement of the stepping astronaut charge model, by considering the charging and plasma dissipation of a rolling rover wheel, The objective of this work is to determine the nature of charging and discharging for a rover wheel as it rolls along the cold, plasma-starved lunar polar regions. The rotating wheel accumulates charge via contact electrification (tribo-charging) with the lunar regolith. This tribo-charging is dependent on the composition of the objects in contact, with insulators and conductors charging differently. Given the environmental plasma in the region, we then determine the dissipation time for the wheel to bleed off its excess charge into the surrounding plasma. A model of the rover wheel rotating continuously over a surface regolith within a polar crater has been applied. The environmental plasma has been described previously. We define a new tribo-charging term specifically for the rotating system, with charge levels defined as a function of the wheel size, area in contact with the regolith, regolith particle size distribution, as well as the velocity at which the wheel is turning. We recognize that as charged dust accumulates and sticks to the wheel, this behaves effectively as a new current. Hence, the overall charging of the system should no longer vary linearly. and begin to show signs of saturation, We are devising a dust current term to model this charge-limiting effect, and will present the results in discussion.

Jackson, T. L.↗
NASA NTRS1992

Diagnosis of NMOS DRAM functional performance as affected by a picosecond dye laser

A picosec pulsed dye laser beam was at selected wavelengths successfully used to simulate heavy-ion single-event effects (SEEs) in negative channel NMOS DRAMs. A DRAM was used to develop the test technique because bit-mapping capability and previous heavy-ion upset data were available. The present analysis is the first to establish such a correlation between laser and heavy-ion data for devices, such as the NMOS DRAM, where charge collection is dominated by long-range diffusion, which is controlled by carrier density at remote distances from a depletion region. In the latter case, penetration depth is an important parameter and is included in the present analysis. A single-pulse picosecond dye laser beam (1.5 microns diameter) focused onto a single cell component can upset a single memory cell; clusters of memory cell upsets (multiple errors) were observed when the laser energy was increased above the threshold energy. The multiple errors were analyzed as a function of the bias voltage and total energy of a single pulse. A diffusion model to distinguish the multiple upsets from the laser-induced charge agreed well with previously reported heavy ion data.

Kim, Q.↗
NASA NTRS2011

CMOS Imager Has Better Cross-Talk and Full-Well Performance

A complementary metal oxide/semiconductor (CMOS) image detector now undergoing development is designed to exhibit less cross-talk and greater full-well capacity than do prior CMOS image detectors of the same type. Imagers of the type in question are designed to operate from low-voltage power supplies and are fabricated by processes that yield device features having dimensions in the deep submicron range. Because of the use of low supply potentials, maximum internal electric fields and depletion widths are correspondingly limited. In turn, these limitations are responsible for increases in cross-talk and decreases in charge-handling capacities. Moreover, for small pixels, lateral depletion cannot be extended. These adverse effects are even more accentuated in a back-illuminated CMOS imager, in which photogenerated charge carriers must travel across the entire thickness of the device. The figure shows a partial cross section of the structure in the device layer of the present developmental CMOS imager. (In a practical imager, the device layer would sit atop either a heavily doped silicon substrate or a thin silicon oxide layer on a silicon substrate, not shown here.) The imager chip is divided into two areas: area C, which contains readout circuits and other electronic circuits; and area I, which contains the imaging (photodetector and photogenerated-charge-collecting) pixel structures. Areas C and I are electrically isolated from each other by means of a trench filled with silicon oxide. The electrical isolation between areas C and I makes it possible to apply different supply potentials to these areas, thereby enabling optimization of the supply potential and associated design features for each area. More specifically, metal oxide semiconductor field-effect transistors (MOSFETs) that are typically included in CMOS imagers now reside in area C and can remain unchanged from established designs and operated at supply potentials prescribed for those designs, while the dopings and the lower supply potentials in area I can be tailored to optimize imager performance. In area I, the device layer includes an n+ -doped silicon layer on which is grown an n-doped silicon layer. A p-doped silicon layer is grown on top of the n -doped layer. The total imaging device thickness is the sum of the thickness of the n+, n, and p layers. A pixel photodiode is formed between a surface n+ implant, a p implant underneath it, the aforementioned p layer, and the n and n+ layers. Adjacent to the diode is a gate for transferring photogenerated charges out of the photodiode and into a floating diffusion formed by an implanted p+ layer on an implanted n-doped region. Metal contact pads are added to the back-side for providing back-side bias.

Pain, Bedabrata↗
NASA NTRS1974

Separation of surface and bulk minority-carrier lifetimes in silicon

A photoexcitation technique is suggested which is direct and convenient, requiring little special equipment. No change in the dimensions of the crystal sample is necessary. Although related to the technique of interposing a filter between the light source and the sample, it differs in that the filter is part of the crystal itself. Basically, one of the electrodes is split into two electrodes, one collecting charge from carriers excited in the bulk. This phenomenon in which the carriers follow very closely the electric field lines has been used in position-sensitive semiconductor radiation detectors (Norbeck and Carlson, 1963) but has not been applied to lifetime measurements. In a sense, the split electrode creates a sample without a surface.

Carroll, K. A.↗
NASA NTRS1974

The Ranicon - A resistive anode image converter

A versatile photon and charged particle imaging system is described. The Ranicon employs a microchannel electron multiplier plate to convert each detected event into a charge signal. This charge pulse is proximity-focused onto a large-area resistive anode plate equipped with pickup electrodes on its edges. Each event is located electronically by the ratios of the charges collected at the edges or by the differences of the signals' risetimes. One- or two-dimensional pictures are built up by storing events digitally (e.g., a core memory) or in analog form (e.g., a storage oscilloscope). Compact laboratory models have been constructed and tested. Operating characteristics, applications, limitations, and advantages of the Ranicon are discussed.

Lampton, M.↗
NASA NTRS1978

Radiation damage of germanium detectors

Energetic particles can produce interstitial-vacancy pairs in a crystal by knocking the atoms from their normal positions. Detectors are unique among semiconductor devices in depending on very low concentrations of electrically active impurities, and also on efficient transport of holes and electrons over relatively large distances. Because the dense regions of damage produced by energetic particles may result in donors and/or acceptors, and also provide trapping sites for holes and electrons, detectors are very sensitive to radiation damage. In addition to these effects occurring within the detector, radiation may also change the characteristics of the exposed surfaces causing unpredictable effects on the detector leakage current. Radiation-induced surface degradation has rarely, if ever, been observed for germanium detectors. The possibility of minimizing hole trapping in charge collection by the use of a high-purity germanium coaxial detector configured with the p (+) contact on the coaxial periphery is discussed.

Pehl, R. H.↗