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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 73 records · Page 4
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

Critical Role of Sc Substitution in Modulating Ferroelectricity in Multiferroic LuFeO 3

Understanding how individual dopants or substitutional atoms interact with host lattices enables us to manipulate, control, and improve the functionality of materials. However, because of the intimate coupling among various degrees of freedom in multiferroics, the atomic-scale influence of individual foreign atoms has remained elusive. Here, we unravel the critical roles of individual Sc substitutional atoms in modulating ferroelectricity at the atomic scale of typical multiferroics, Lu 1–x Sc x FeO 3 , by combining advanced microscopy and theoretical studies. Atomic variations in polar displacement of intriguing topological vortex domains stabilized by Sc substitution are directly correlated with Sc atom-mediated local chemical and electronic fluctuations. The local FeO 5 trimerization magnitude and Lu/Sc–O hybridization strength are found to be significantly reinforced by Sc, clarifying the origin of the strong dependence of improper ferroelectricity on Sc content. We find that this study could pave the way for correlating dopant-regulated atomic-scale local structures with global properties to engineer emergent functionalities of numerous chemically doped functional materials.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Local Atomic Configuration Control of Superconductivity in the Undoped Pnictide Parent Compound BaFe 2 As 2

Emergent superconductivity is strongly correlated with the symmetry of local atomic configuration in the parent compounds of iron-based superconductors. While chemical doping or hydrostatic pressure can change the local geometry, conventional approaches do not provide a clear pathway in predictably tuning the detailed atomic arrangement due to the parent compound’s complicated structural deformation in the presence of the tetragonal-to-orthorhombic phase transition. Here, we demonstrate a systematic approach to manipulate local structural configurations in BaFe 2 As 2 epitaxial thin films by controlling two independent structural factors, orthorhombicity (in-plane anisotropy) and tetragonality (out-of-plane/in-plane balance), from lattice parameters. We tune superconductivity without doping utilizing both structural factors separately and controlling local tetrahedral coordination in the designed thin film heterostructures with substrate clamping and biaxial strain. We further show this allows quantitative control of the structural phase transition, the associated magnetism, and superconductivity in parent material BaFe 2 As 2 . Furthermore, this approach will advance the development of tunable thin film superconductors in a reduced dimension.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2026

Patterned, Low-Temperature Growth of Transition Metal Dichalcogenides for Low Resistance Raised Contacts

Transition metal dichalcogenide (TMD) monolayers are promising channel materials for next-generation electronic devices. A challenge is the high contact resistance between monolayer TMDs and metal contacts, especially for holes. Here, in this regard, raised source/drain contacts are promising. However, the direct, patterned growth of raised contacts at CMOS-compatible temperatures remains largely unresolved. We present plasma-free selenization and sulfurization of metal oxides at substrate temperatures down to 400 °C, compatible with back-end-of-line thermal budgets. To achieve growth at such temperatures, gas-phase chalcogen precursors are first thermally activated at 950 °C. Films grown on single-crystal monolayer TMDs exhibit high crystal quality, as confirmed by transmission electron microscopy. Raised contacts on WSe 2 monolayers fabricated using this approach yield a low hole contact resistance of 0.3 kΩ·μm after chemical doping. This process is shown to be applicable to growing various TMDs, including WS 2 , MoSe 2 , MoS 2 , PtSe 2 , and NbS 2 .

contact engineering↗
DOE OSTI2025

Pyrochlore NaYbO2: A Potential Quantum Spin Liquid Candidate

The search for quantum spin liquids (QSL) and chemical doping in such materials to explore superconductivity have continuously attracted intense interest. Here, we report the discovery of a potential QSL candidate, pyrochlore-lattice β-NaYbO2. Colorless and transparent NaYbO2 single crystals, layered α-NaYbO2 (∼250 μm on edge) and octahedral β-NaYbO2 (∼50 μm on edge), were grown for the first time. Synchrotron X-ray single-crystal diffraction unambiguously determined that the newfound β-NaYbO2 belongs to the three-dimensional pyrochlore structure characterized by the R3̅m space group, corroborated by synchrotron X-ray and neutron powder diffraction and pair distribution function. Magnetic measurements revealed no long-range magnetic order or spin glass behavior down to 0.4 K with a low boundary spin frustration factor of 17.5, suggesting a potential QSL ground state. Under high magnetic fields, the potential QSL state was broken and spins order. Our findings reveal that NaYbO2 is a fertile playground for studying novel quantum states.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2021

Spin-dependent vibronic response of a carbon radical ion in two-dimensional WS 2

Atomic spin centers in 2D materials are a highly anticipated building block for quantum technologies. Here, we demonstrate the creation of an effective spin-1/2 system via the atomically controlled generation of magnetic carbon radical ions (CRIs) in synthetic two-dimensional transition metal dichalcogenides. Hydrogenated carbon impurities located at chalcogen sites introduced by chemical doping are activated with atomic precision by hydrogen depassivation using a scanning probe tip. In its anionic state, the carbon impurity is computed to have a magnetic moment of 1 μ B resulting from an unpaired electron populating a spin-polarized in-gap orbital. We show that the CRI defect states couple to a small number of local vibrational modes. The vibronic coupling strength critically depends on the spin state and differs for monolayer and bilayer WS 2 . The carbon radical ion is a surface-bound atomic defect that can be selectively introduced, features a well-understood vibronic spectrum, and is charge state controlled.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Atomic-scale 3D imaging of individual dopant atoms in an oxide semiconductor

The physical properties of semiconductors are controlled by chemical doping. In oxide semiconductors, small variations in the density of dopant atoms can completely change the local electric and magnetic responses caused by their strongly correlated electrons. In lightly doped systems, however, such variations are difficult to determine as quantitative 3D imaging of individual dopant atoms is a major challenge. We apply atom probe tomography to resolve the atomic sites that donors occupy in the small band gap semiconductor Er(Mn,Ti)O 3 with a nominal Ti concentration of 0.04 at. %, map their 3D lattice positions, and quantify spatial variations. Our work enables atomic-level 3D studies of structure-property relations in lightly doped complex oxides, which is crucial to understand and control emergent dopant-driven quantum phenomena.

36 MATERIALS SCIENCE↗
DOE OSTI2023

The breakdown of both strange metal and superconducting states at a pressure-induced quantum critical point in iron-pnictide superconductors

Here we report the first observation of the concurrent breakdown of the strange metal (SM) normal state and superconductivity at a pressure-induced quantum critical point in Ca 10 (Pt 4 As 8 )((Fe 0.97 Pt 0.03 ) 2 As 2 ) 5 superconductor. We find that, upon suppressing the superconducting state, the power exponent (α) changes from 1 to 2, and the slope of the temperature-linear resistivity per FeAs layer (A $\Box$ ) gradually diminishes. At a critical pressure, A $\Box$ and superconducting transition temperature (T c ) go to zero concurrently, where a quantum phase transition from a superconducting state with a SM normal state to a non-superconducting Fermi liquid state occurs. Scaling analysis reveals that the change of A $\Box$ with T c obeys the relation of T c ~ (A $\Box$ ) 0.5 , similar to what is seen in other chemically doped unconventional superconductors. These results suggest that there is a simple but powerful organizational principle of connecting the SM normal state with the high-T c superconductivity.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

Suppression of superconductivity by anisotropic strain near a nematic quantum critical point

In most unconventional and high-temperature superconductors, superconductivity emerges as a nearby symmetry-breaking phase is suppressed by chemical doping or pressure. This has led to the belief that the fluctuations associated with the symmetry-breaking phase are beneficial, if not responsible, for the superconducting pairing. A direct test to verify this hypothesis is to observe a decrease of the superconducting critical temperature (T c ) by applying the symmetry-breaking conjugate field that suppresses the dynamic fluctuations of the competing order. However, most of the competing phases in unconventional superconductors break translational symmetry, requiring a spatially modulated conjugate field that is difficult to realize experimentally. Here, we show that anisotropic strain, the conjugate field of nematicity, reduces the T c of an iron pnictide. For optimally doped samples we show a fivefold reduction of T c with less than one per cent of strain. For underdoped samples, T c becomes zero yielding a fully metallic ground state. In addition to providing direct evidence of the role played by the nematic fluctuations in the formation of the superconducting state, these results demonstrate tunable mechanical control of a high-temperature superconductor, an important step forward for technological applications of superconductivity.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Quantum phase transition from superconducting to insulating-like state in a pressurized cuprate superconductor

Copper oxide superconductors continue to fascinate the communities of condensed matter physics and material sciences because they host the highest ambient-pressure superconducting transition temperature and unconventional electronic behaviour that are not fully explained. Searching for universal links between the superconducting state and its normal metallic state is believed to be an effective approach to elucidate the underlying mechanism of superconductivity. One of the common expectations for copper oxide superconductors is that a metallic phase will appear after the superconductivity is entirely suppressed by chemical doping or the application of a magnetic field9. Here we report the first observation of a quantum phase transition from a superconducting state to an insulating-like state as a function of pressure in Bi 2 Sr 2 CaCu 2 O 8+δ (Bi2212) superconductors with two CuO 2 planes in a unit cell for doping below, at and above a level that achieves the highest transition temperature. We also find the same phenomenon in related compounds with a single CuO 2 plane as well as three CuO 2 planes in a unit cell. This apparently universal phenomenon poses a challenge for achieving a unified understanding of the mechanism of high-temperature superconductivity.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Field-induced quantum critical point in the itinerant antiferromagnet Ti 3 Cu 4

New phases of matter emerge at the edge of magnetic instabilities, which can occur in materials with moments that are localized, itinerant or intermediate between these extremes. In local moment systems, such as heavy fermions, the magnetism can be tuned towards a zero-temperature transition at a quantum critical point (QCP) via pressure, chemical doping, and, rarely, magnetic field. By contrast, in itinerant moment systems, QCPs are more rare, and they are induced by pressure or doping; there are no known examples of field induced transitions. This means that no universal behaviour has been established across the whole itinerant-to-local moment range—a substantial gap in our knowledge of quantum criticality. Here we report an itinerant antiferromagnet, Ti 3 Cu 4 , that can be tuned to a QCP by a small magnetic field. We see signatures of quantum criticality and the associated non-Fermi liquid behaviour in thermodynamic and transport measurements, while band structure calculations point to an orbital-selective, spin density wave ground state, a consequence of the square net structural motif in Ti 3 Cu 4 . Ti 3 Cu 4 thus provides a platform for the comparison and generalisation of quantum critical behaviour across the whole spectrum of magnetism.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2020

Methanol tolerance of atomically dispersed single metal site catalysts: mechanistic understanding and high-performance direct methanol fuel cells

Proton-exchange membrane fuel cells (PEMFCs) and direct methanol fuel cells (DMFCs) are promising power sources from portable electronic devices to vehicles. The high-cost issue of these low-temperature fuel cells can be primarily addressed by using platinum-group metal (PGM)-free oxygen reduction reaction (ORR) catalysts, in particular atomically dispersed metal–nitrogen–carbon (M–N–C, M = Fe, Co, Mn). Furthermore, a significant advantage of M–N–C catalysts is their superior methanol tolerance over Pt, which can mitigate the methanol cross-over effect and offer great potential of using a higher concentration of methanol in DMFCs. In this work, we investigated the ORR catalytic properties of M–N–C catalysts in methanol-containing acidic electrolytes via experiments and density functional theory (DFT) calculations. FeN 4 sites demonstrated the highest methanol tolerance ability when compared to metal-free pyridinic N, CoN 4 , and MnN 4 active sites. The methanol adsorption on MN 4 sites is even strengthened when electrode potentials are applied during the ORR. The negative influence of methanol adsorption becomes significant for methanol concentrations higher than 2.0 M. However, the methanol adsorption does not affect the 4e - ORR pathway or chemically destroy the FeN 4 sites. The understanding of the methanol-induced ORR activity loss guides the design of promising M–N–C cathode catalyst in DMFCs. Accordingly, we developed a dual-metal site Fe/Co–N–C catalyst through a combined chemical-doping and adsorption strategy. Instead of generating a possible synergistic effect, the introduced Co atoms in the first doping step act as “scissors” for Zn removal in metal–organic frameworks (MOFs), which is crucial for modifying the porosity of the catalyst and providing more defects for stabilizing the active FeN 4 sites generated in the second adsorption step. The Fe/Co–N–C catalyst significantly improved the ORR catalytic activity and delivered remarkably enhanced peak power densities (i.e., 502 and 135 mW cm -2 ) under H 2 –air and methanol–air conditions, respectively, representing the best performance for both types of fuel cells. Notably, the fundamental understanding of methanol tolerance, along with the encouraging DMFC performance, will open an avenue for the potential application of atomically dispersed M–N–C catalysts in other direct alcohol or ammonia fuel cells.

25 ENERGY STORAGE↗
DOE OSTI2021

High-performance carbon nanotube electronic ratchets

The rapid advancements in low-power portable/wearable electronic devices require concurrent development of technologies that can provide power without the need for bulky, heavy battery storage. Electronic ratchets, asymmetric transistor-based devices that can convert AC signals or electronic noise into DC power, have been proposed as one solution to this growing need. Here, the recent demonstration of conjugated polymer-based electronic ratchets offers a route toward lightweight, flexible power sources for portable applications. Here we demonstrate the fabrication of the first electronic ratchets where the active channel component consists of semiconducting single-walled carbon nanotubes (s-SWCNTs), which can transform electronic noise or AC signals to a stable DC current with higher output power (up to ca. 14 mW for a chemically doped device) than their polymer-based analogs. We also show that patterning of the dopant profile in the s-SWCNT channel enables reasonable power conversion performance (ca. 3.5 mW) with improved stability relative to homogeneously doped devices. Our findings demonstrate the promise for s-SWCNT electronic ratchets as energy harvesting devices for portable, low-power applications.

ENGINEERING,MATERIALS SCIENCE,NANOSCIENCE AND NANO↗
DOE OSTI2020

Organismic materials for beyond von Neumann machines

The elementary basis of intelligence in organisms with a central nervous system includes neurons and synapses and their complex interconnections forming neural circuits. In non-neural organisms such as slime mold with gel-like media, viscosity modulation enables adaptation to changing environments. At a larger scale, collective intelligence emerges via social interactions and feedback in animal colonies. Learning and memory are therefore multi-scale features that evolve as a result of constant interactions with the environment. There is growing interest in emulating such features of intelligence in computing machines and autonomous systems. Materials that can respond to their environment in a manner similar to organisms (referred to as "organismic materials") therefore may be of interest as hardware components in artificial intelligence machines. In this brief review, we present a class of semiconductors called correlated oxides as candidates for learning machines. The term "correlated" refers to the fact that electrons in such lattices strongly interact and the ground state is not what is predicted by classical band theory. Such materials can undergo insulator-metal transitions at near ambient conditions under external stimuli such as thermal or electrical fields, strain, and chemical doping. Depending on the mechanism driving the transition, intermediate states can be metastable with different volatilities, and the time scales of phase change can be controlled over many orders of magnitude. The change in electronic properties can be sharp or gradual, leading to digital or analog behavior. These properties enable the realization of artificial neurons and synapses and emulate the associative and non-associative learning characteristics found in various organisms. We examine microscopic properties concerning electronic and structural transitions leading to collective behavior and theoretical treatments of the ground state and dynamical response, showcasing VO 2 as a model system. Next, we briefly review algorithms designed from the plasticity demonstrated by phase changing systems. Finally, we conclude the brief review with suggestions for future research toward realizing non-von Neumann machines.

42 ENGINEERING↗
DOE OSTI2022

High-density polarization-induced 2D electron gases in N-polar pseudomorphic undoped GaN/Al 0.85 Ga 0.15 N heterostructures on single-crystal AlN substrates

The polarization difference and band offset between Al(Ga)N and GaN induce two-dimensional (2D) free carriers in Al(Ga)N/GaN heterojunctions without any chemical doping. A high-density 2D electron gas (2DEG), analogous to the recently discovered 2D hole gas in a metal-polar structure, is predicted in a N-polar pseudomorphic GaN/Al(Ga)N heterostructure on unstrained AlN. We report the observation of such 2DEGs in N-polar undoped pseudomorphic GaN/AlGaN heterostructures on single-crystal AlN substrates by molecular beam epitaxy. With a high electron density of ~4.3 ×10 13 /cm 2 that maintains down to cryogenic temperatures and a room temperature electron mobility of ~450 cm 2 /V s, a sheet resistance as low as ~320 Ω/$\Box$ is achieved in a structure with an 8 nm GaN layer. Finally, these results indicate significant potential of AlN platform for future high-power RF electronics based on N-polar III-nitride high electron mobility transistors.

42 ENGINEERING↗
DOE OSTI2024

Precise Fermi level engineering in a topological Weyl semimetal via fast ion implantation

The precise controllability of the Fermi level is a critical aspect of quantum materials. For topological Weyl semimetals, there is a pressing need to fine-tune the Fermi level to the Weyl nodes and unlock exotic electronic and optoelectronic effects associated with the divergent Berry curvature. However, in contrast to two-dimensional materials, where the Fermi level can be controlled through various techniques, the situation for bulk crystals beyond laborious chemical doping poses significant challenges. Here, we report the milli-electron-volt (meV) level ultra-fine-tuning of the Fermi level of bulk topological Weyl semimetal tantalum phosphide using accelerator-based high-energy hydrogen implantation and theory-driven planning. By calculating the desired carrier density and controlling the accelerator profiles, the Fermi level can be experimentally fine-tuned from 5 meV below, to 3.8 meV below, to 3.2 meV above the Weyl nodes. High-resolution transmission electron microscopy reveals the crystalline structure is largely maintained under irradiation, while electrical transport indicates that Weyl nodes are preserved and carrier mobility is also largely retained. Our work demonstrates the viability of this generic approach to tune the Fermi level in semimetal systems and could serve to achieve property fine-tuning for other bulk quantum materials with ultrahigh precision.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Modulating charge transport via 2 MeV He + irradiation in VO 2

Vanadium dioxide (VO 2 ) is of interest for adaptive electronic applications such as neuromorphic neuristor devices and variable emissivity or tunable thermal control materials, thanks to its key property—a metal–insulator transition (MIT) at 68 °C that is accompanied by a dramatic change in electrical and optical properties. To improve performance in these roles, it is critical to develop approaches to engineer transport properties and the MIT behavior. While many documented techniques exist to modulate the MIT and film resistivities via lattice strain and chemical doping, less is known about the effects of ion irradiation on the intrinsic properties of VO 2 , despite the ability to control the spatial distribution of irradiation beams and the prevalence of high energy ion implantation in the semiconductor industry. The impact of irradiation of different acceleration energies on the responses of VO 2 is of specific interest, as charged particle energy generally impacts both the resulting defect profile and corresponding transport behavior. Here, we demonstrate that 2 MeV He ions at equivalent calculated displacements per atom, in two different types of films, can create remarkable changes to the nature of charge transport in VO 2 , especially in the low-temperature insulating phase. Simulation of resulting changes in electrical conductivity reveals that He ion irradiation offers a strategy to increase both oscillation frequency and the signal transmission. These results provide insights into the intentional design of defect populations to modulate transport for neuromorphic VO 2 devices.

Gurrola, Rebeca M. [Texas A & M Univ., College Sta↗
DOE OSTI2020

Superconductivity in undoped BaFe 2 As 2 by tetrahedral geometry design

Fe-based superconductors exhibit a diverse interplay between charge, orbital, and magnetic ordering. Variations in atomic geometry affect electron hopping between Fe atoms and the Fermi surface topology, influencing magnetic frustration and the pairing strength through changes of orbital overlap and occupancies. Here, we experimentally demonstrate a systematic approach to realize superconductivity without chemical doping in BaFe 2 As 2 , employing geometric design within an epitaxial heterostructure. We control both tetragonality and orthorhombicity in BaFe 2 As 2 through superlattice engineering, which we experimentally find to induce superconductivity when the As−Fe−As bond angle approaches that in a regular tetrahedron. This approach to superlattice design could lead to insights into low-dimensional superconductivity in Fe-based superconductors.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗