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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 73 records · Page 4
All sourcesNASA NTRSDOE OSTI
NASA NTRS2015

4H-SiC JFET Multilayer Integrated Circuit Technologies Tested Up to 1000 K

Testing of semiconductor electronics at temperatures above their designed operating envelope is recognized as vital to qualification and lifetime prediction of circuits. This work describes the high temperature electrical testing of prototype 4H silicon carbide (SiC) junction field effect transistor (JFET) integrated circuits (ICs) technology implemented with multilayer interconnects; these ICs are intended for prolonged operation at temperatures up to 773K (500 C). A 50 mm diameter sapphire wafer was used in place of the standard NASA packaging for this experiment. Testing was carried out between 300K (27 C) and 1150K (877 C) with successful electrical operation of all devices observed up to 1000K (727 C).

JFET↗
NASA NTRS2006

Guidelines for Design and Test of a Built-In Self Test (BIST) Circuit For Space Radiation Studies of High-Speed IC Technologies

Serial Bit Error Rate Testing under radiation to characterize single particle induced errors in high-speed IC technologies generally involves specialized test equipment common to the telecommunications industry. As bit rates increase, testing is complicated by the rapidly increasing cost of equipment able to test at-speed. Furthermore as rates extend into the tens of billions of bits per second test equipment ceases to be broadband, a distinct disadvantage for exploring SEE mechanisms in the target technologies. In this presentation the authors detail the testing accomplished in the CREST project and apply the knowledge gained to establish a set of guidelines suitable for designing arbitrarily high speed radiation effects tests.

Carts, M. A.↗
NASA NTRS1972

Development of high speed power thyristor: The gate assisted turn-off thyristor

A high speed power switch with unique turn-off capability was developed. This gate-assisted turn-off thyristor was rated at 609 V and 50 A with turn-off times of 2 microsec. Twenty-two units were delivered for evaluation in a series inverter circuit. In addition, test circuits designed to relate to the series inverter application were built and demonstrated.

Hamilton, D. R.↗
NASA NTRS1973

Hypervelocity impact testing of cables

The physics and electrical results obtained from simulated micrometeoroid testing of certain Skylab cables are presented. The test procedure, electrical circuits, test equipment, and cable types utilized are also explained.

Jex, D. W.↗
NASA NTRS1999

On-Wafer Testing of Circuits Through 220 GHz

We have jointly developed the capability to perform on-wafer s-parameter and noise figure measurements through 220 GHz. S-parameter test sets have been developed covering full waveguide bands of 90-140 GHz (WR-08) and 140-220 GHz (WR-05). The test sets have been integrated with coplanar probes to allow accurate measurements on-wafer. We present the design and performance of the test sets and wafer probes. We also present calibration data as well as measurements of active circuits at frequencies as high as 215 GHz.

Gaier, Todd↗
NASA NTRS2000

Flow Quality Studies of the NASA Glenn Research Center Icing Research Tunnel Circuit (1995 Tests)

The purpose of conducting the flow-field surveys described in this report was to more fully document the flow quality in several areas of the tunnel circuit in the NASA Glenn Research Center Icing Research Tunnel. The results from these surveys provide insight into areas of the tunnel that were known to exhibit poor flow quality characteristics and provide data that will be useful to the design of flow quality improvements and a new heat exchanger for the facility. An instrumented traversing mechanism was used to survey the flow field at several large cross sections of the tunnel loop over the entire speed range of the facility. Flow-field data were collected at five stations in the tunnel loop, including downstream of the fan drive motor housing, upstream and downstream of the heat exchanger, and upstream and downstream of the spraybars located in the settling chamber upstream of the test section. The data collected during these surveys greatly expanded the data base describing the flow quality in each of these areas. The new data matched closely the flow quality trends recorded from earlier tests. Data collected downstream of the heat exchanger and in the settling chamber showed how the configuration of the folded heat exchanger affected the pressure, velocity, and flow angle distributions in these areas. Smoke flow visualization was also used to qualitatively study the flow field in an area downstream of the drive fan and in the settling chamber/contraction section.

Arrington, E. Allen↗
DOE OSTI2022

Characterizing the Reproducibility of Noisy Quantum Circuits

The ability of a quantum computer to reproduce or replicate the results of a quantum circuit is a key concern for verifying and validating applications of quantum computing. Statistical variations in circuit outcomes that arise from ill-characterized fluctuations in device noise may lead to computational errors and irreproducible results. While device characterization offers a direct assessment of noise, an outstanding concern is how such metrics bound the reproducibility of a given quantum circuit. Here, we first directly assess the reproducibility of a noisy quantum circuit, in terms of the Hellinger distance between the computational results, and then we show that device characterization offers an analytic bound on the observed variability. We validate the method using an ensemble of single qubit test circuits, executed on a superconducting transmon processor with well-characterized readout and gate error rates. The resulting description for circuit reproducibility, in terms of a composite device parameter, is confirmed to define an upper bound on the observed Hellinger distance, across the variable test circuits. This predictive correlation between circuit outcomes and device characterization offers an efficient method for assessing the reproducibility of noisy quantum circuits.

97 MATHEMATICS AND COMPUTING↗
NASA NTRS1993

An x-band peeled HEMT amplifier

A discrete peeled high electron mobility transistor (HEMT) device was integrated into a 10 GHz amplifier. The discrete HEMT device interconnects were made using photo patterned metal, stepping from the 10 mil alumina host substrate onto the 1.3 microns thick peeled GaAs HEMT layer, eliminating the need for bond wires and creating a fully integrated circuit. Testing of devices indicate that the peeled device is not degraded by the peel off step but rather there is an improvement in the quantum well carrier confinement. Circuit testing resulted in a maximum gain of 8.5 dB and a return loss minimum of -12 dB.

Young, Paul G.↗
NASA NTRS1991

Investigations of detail design issues for the high speed acoustic wind tunnel using a 60th scale model tunnel. Part 1: Tests with open circuits

This report summarizes the tests on the 1:60 scale model of the High Speed Acoustic Wind Tunnel (HSAWT) performed during the period of November 1989 to December 1990. Throughout the testing the tunnel was operated in the 'open circuit mode', that is when the airflow was induced by a powerful exhaust fan located outside the tunnel circuit. The tests were first performed with the closed test section and were subsequently repeated with the open test section. While operating with the open test section, a novel device, called the 'nozzle-diffuser,' was also tested in order to establish its usefulness of increasing pressure recovery in the first diffuser. The tests established the viability of the tunnel design. The flow distribution in each tunnel component was found acceptable and pressure recovery in the diffusers were found satisfactory. The diffusers appeared to operate without flow separation. All tests were performed at NASA LaRC.

Barna, P. Stephen↗
NASA NTRS1972

Electronic test and calibration circuits, a compilation

A wide variety of simple test calibration circuits are compiled for the engineer and laboratory technician. The majority of circuits were found inexpensive to assemble. Testing electronic devices and components, instrument and system test, calibration and reference circuits, and simple test procedures are presented.

Source record↗
NASA NTRS1974

Electron gun test report

Shock and vibration tests were performed to determine the electron optical properties of the electron gun. The test procedure included complete mechanical inspection including a dimensional check of all critical parts. Electrical inspection involved tests for dielectric strengths and element to element leakage resistance. All test circuits and equipment for each test are specified in the test plan.

Source record↗
DOE OSTI2020

A Novel Model of Thyristor in Reverse Recovery Process for Current Interruption Test of HVDC Circuit Breakers

The high voltage thyristor is widely used in high voltage DC (HVDC) grids due to its large current capability. Recently, the high voltage thyristor is implemented to produce a high current in the HVDC circuit breaker (CB) testing process. Unfortunately, the reverse recovery process (RRP) of a thyristor could induce significant turn-off overvoltage and power losses, jeopardizing the safety of the devices. The existing models of a thyristor cannot describe such hard-switching transient accurately. Therefore, this paper divides this process into four stages based on the physical mechanism and proposes a novel cosine exponential (CE), simulating the voltage and current of the thyristor with analytical equations, which are derived from the equivalent circuit. Moreover, the extraction procedure of the proposed model is illustrated in this paper. Finally, we develop an HVDC CB test platform to validate the proposed model. Experimental results show that the proposed CE model can accurately predict the overvoltage with a relative error of less than 8% at various current varying rates.

Dongye, Zhonghao↗
NASA NTRS1986

Circuit for Lifetime and Surface-Recombination Measurements

Test circuit for silicon solar cells suppresses spurious effects. New circuit increases accuracy of measurements of recombination lifetime and effective surface recombination velocity in silicon solar cell. Fast electronic switch, circuit grounds forward-biased cell so rapidly transient voltage to be measured not affected significantly.

Lindholm, F. A.↗
NASA NTRS1989

Automatic Parametric Testing Of Integrated Circuits

Computer program for parametric testing saves time and effort in research and development of integrated circuits. Software system automatically assembles various types of test structures and lays them out on silicon chip, generates sequency of test instructions, and interprets test data. Employs self-programming software; needs minimum of human intervention. Adapted to needs of different laboratories and readily accommodates new test structures. Program codes designed to be adaptable to most computers and test equipment now in use. Written in high-level languages to enhance transportability.

Jennings, Glenn A.↗
NASA NTRS1971

Radiation damage in MOS integrated circuits, Part 1

Complementary and p-channel MOS integrated circuits made by four commercial manufacturers were investigated for sensitivity to radiation environment. The circuits were irradiated with 1.5 MeV electrons. The results are given for electrons and for the Co-60 gamma radiation equivalent. The data are presented in terms of shifts in the threshold potentials and changes in transconductances and leakages. Gate biases of -10V, +10V and zero volts were applied to individual MOS units during irradiation. It was found that, in most of circuits of complementary MOS technologies, noticable changes due to radiation appear first as increased leakage in n-channel MOSFETs somewhat before a total integrated dose 10 to the 12th power electrons/sg cm is reached. The inability of p-channel MOSFETs to turn on sets in at about 10 to the 13th power electrons/sq cm. Of the circuits tested, an RCA A-series circuit was the most radiation resistant sample.

Danchenko, V.↗
NASA NTRS1977

Hearing-aid tester

Hearing aids are automatically checked by circuit that applies half-second test signal every thirty minutes. If hearing-aid output is distorted, too small, or if battery is too low, a warning lamp is activated. Test circuit is incorporated directly into hearing-aid package.

Kessinger, R.↗
NASA NTRS1990

Tester Detects Steady-Short Or Intermittent-Open Circuits

Momentary open circuits or steady short circuits trigger buzzer. Simple, portable, lightweight testing circuit sounds long-duration alarm when it detects steady short circuit or momentary open circuit in coaxial cable or other two-conductor transmission line. Tester sensitive to discontinuities lasting 10 microseconds or longer. Used extensively for detecting intermittent open shorts in accelerometer and extensometer cables. Also used as ordinary buzzer-type continuity checker to detect steady short or open circuits.

Anderson, Bobby L.↗