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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 73 records · Page 4
All sourcesNASA NTRSDOE OSTI
NASA NTRS1976

Development of low-cost silicon crystal growth techniques for terrestrial photovoltaic solar energy conversion

Because of the growing need for new sources of electrical energy, photovoltaic solar energy conversion is being developed. Photovoltaic devices are now being produced mainly from silicon wafers obtained from the slicing and polishing of cylindrically shaped single crystal ingots. Inherently high-cost processes now being used must either be eliminated or modified to provide low-cost crystalline silicon. Basic to this pursuit is the development of new or modified methods of crystal growth and, if necessary, crystal cutting. If silicon could be grown in a form requiring no cutting, a significant cost saving would potentially be realized. Therefore, several techniques for growth in the form of ribbons or sheets are being explored. In addition, novel techniques for low-cost ingot growth and cutting are under investigation.

Zoutendyk, J. A.↗
NASA NTRS1987

Devitrification and delayed crazing of SiO2 on single-crystal silicon and chemically vapor-deposited silicon nitride

The linear growth rate of cristobalite was measured in thin SiO2 films on silicon and chemically vapor-deposited silicon nitride. The presence of trace impurities from alumina furnace tubes greatly increased the crystal growth rate. Under clean conditions, the growth rate was still 1 order-of-magnitude greater than that for internally nucleated crystals in bulk silica. Crystallized films cracked and lifted from the surface after exposure to atmospheric water vapor. The crystallization and subsequent crazing and lifting of protective SiO2 films on silicon nitride should be considered in long-term applications.

Choi, Doo Jin↗
NASA NTRS1982

Refractories Keep Silicon Crystals Pure

Formation of carbon monoxide gas is prevented by a linear of refractory material free of elemental carbon. For pressures above about 4 torr, silicon carbide can be used as refractory liner. The problem of carbide contamination can arise in crystal growth of any material that forms a carbide more stable than carbon monoxide. Prevention in such cases is possible by using noncarbon refractories in place of graphite.

Schmid, F.↗
NASA NTRS1980

A multiple p-n junction structure obtained from as-grown Czochralski silicon crystals by heat treatment - Application to solar cells

Multiple p-n junctions have been prepared in as-grown Czochralski p-type silicon through overcompensation near the oxygen periodic concentration maxima by oxygen thermal donors generated during heat treatment at 450 C. Application of the multiple p-n-junction configuration to photovoltaic energy conversion has been investigated. A new solar-cell structure based on multiple p-n-junctions was developed. Theoretical analysis showed that a significant increase in collection efficiency over the conventional solar cells can be achieved.

Chi, J. Y.↗
NASA NTRS1984

Overview of Bulk Silicon Crystal Growth

The Czochralski and float-zone techniques are reviewed and the consequences of high growth rates in the growth of electronic grade silicon are examined. Impurity segregation coefficients are defined.

Source record↗
NASA NTRS1986

Advanced dendritic web growth development and development of single-crystal silicon dendritic ribbon and high-efficiency solar cell program

Efforts to demonstrate that the dendritic web technology is ready for commercial use by the end of 1986 continues. A commercial readiness goal involves improvements to crystal growth furnace throughput to demonstrate an area growth rate of greater than 15 sq cm/min while simultaneously growing 10 meters or more of ribbon under conditions of continuous melt replenishment. Continuous means that the silicon melt is being replenished at the same rate that it is being consumed by ribbon growth so that the melt level remains constant. Efforts continue on computer thermal modeling required to define high speed, low stress, continuous growth configurations; the study of convective effects in the molten silicon and growth furnace cover gas; on furnace component modifications; on web quality assessments; and on experimental growth activities.

Duncan, C. S.↗
NASA NTRS1984

High-purity silicon crystal growth

Crystal growth parameter effects on minority carrier lifetime and solar cell efficiencies were investigated using high purity techniques such as float zoning. Study objectives include the following: (1) optimize dopants and minority carrier lifetime in FZ material for high efficiency silicon solar cell applications; (2) improve the understanding of lifetime degradation mechanisms (point defects, impurities, thermal history, surface effects, etc.), and (3) crystallographic defect characterization of float zone and ribbon crystals via X-ray topography.

Ciszek, T.↗
NASA NTRS1985

Acoustic emission monitoring crack propagation in single crystal silicon

The feasibility of acoustic emission (AE) monitoring of cracking and crack propagation in Si semiconductor materials was evaluated experimentally. A double torsion load relaxation method was employed wherein the propagation velocity and the AE levels in precracked (but not notched) boron-doped wafers were recorded simultaneously. A numerical model for the critical stress intensity factor (KIC) was used to relate the crack growth velocity, the instantaneous load and the load relaxation rate. All specimens were monitored with acoustic transducers at six points and examined with SEM after failure. The AE levels reached a peak amplitude of 70 dB at a KIC of 0.997 MNm to the -3/2 for cracking in the 111 plane. No AE was detected before the load reached the KIC, indicating that no subcritical crack growth occurs in Si. The results support the use of AE for monitoring crack propagation in crystal Si.

Chen, C. P.↗
NASA NTRS1972

Study of beryllium and beryllium-lithium complexes in single-crystal silicon.

When beryllium is thermally diffused into silicon, it gives rise to acceptor levels 191 and 145 meV above the valence band. Quenching and annealing studies indicate that the 145-meV level is due to a more complex beryllium configuration than the 191-meV level. When lithium is thermally diffused into a beryllium-doped silicon sample, it produces two new acceptor levels at 106 and 81 meV. Quenching and annealing studies indicate that these new levels are due to lithium forming a complex with the defects responsible for the 191- and 145-meV beryllium levels, respectively. Electrical measurements imply that the lithium impurity ions are physically close to the beryllium impurity atoms. The ground state of the 106-meV beryllium-lithium level is split into two levels, presumably by internal strains. Tentative models are proposed to explain these results.

Crouch, R. K.↗
NASA NTRS1972

A study of beryllium and beryllium-lithium complexes in single crystal silicon

When beryllium is thermally diffused into silicon, it gives rise to acceptor levels 191 MeV and 145 meV above the valence band. Quenching and annealing studies indicate that the 145-MeV level is due to a more complex beryllium configuration than the 191-MeV level. When lithium is thermally diffused into a beryllium-doped silicon sample, it produces two acceptor levels at 106 MeV and 81 MeV. Quenching and annealing studies indicate that these levels are due to lithium forming a complex with the defects responsible for the 191-MeV and 145-MeV beryllium levels, respectively. Electrical measurements imply that the lithium impurity ions are physically close to the beryllium impurity atoms. The ground state of the 106-MeV beryllium level is split into two levels, presumably by internal strains. Tentative models are proposed.

Crouch, R. K.↗
NASA NTRS1974

Gravitational effects on process-induced defects in single crystal silicon

Description and discussion of a series of experiments which vary each of several important processing parameters including wafer orientation, temperature, gravity greater than 1 g, and ultimately zero gravity. These experiments are in progress and results to date are included from experiments which control temperature, duration of thermal cycle, and wafer orientation during 1 g processing. Preliminary evidence is presented which indicates that gravitational stresses play a role in defect generation during processing at 1 g.

Porter, W. A.↗
NASA NTRS1977

Friction, deformation and fracture of single-crystal silicon carbide

Friction experiments were conducted with hemispherical and conical diamond riders sliding on the basal plane of silicon carbide. The results indicate that, when deformation is primarily elastic, the friction does not depend on crystallographic orientation and there is no detectable fracture or cracking. When, however, plastic deformation occurs, silicon carbide exhibits anisotropic friction and deformation behavior. Surface fracture crack patterns surrounding wear tracks are observed to be of three types. The crack-geometries of two types are generally independent of orientation, the third crack, however, depends on the orientation. All surface cracks extend into subsurface. Anisotropic friction, deformation and fracture on the basal plane are primarily controlled by the slip system and cleavage.

Miyoshi, K.↗
NASA NTRS1977

Friction, deformation and fracture of single-crystal silicon carbide

An investigation was conducted to determine the nature of the deformation and fracture of silicon carbide and its effects on friction properties. Friction experiments were conducted with hemispherical and conical diamond riders sliding on the basal plane of silicon carbide. The results indicate that, when deformation is primarily elastic, the friction does not depend on crystallographic orientation and there is no detectable fracture or cracking. When, however, plastic deformation occurs, silicon carbide exhibits anisotropic friction and deformation behavior. Surface fracture crack patterns surrounding wear tracks are observed to be of three types. The crack-geometries of two types are generally independent of orientation, the third crack, however, depends on the orientation. All surface cracks extend into subsurface.

Miyoshi, K.↗
NASA NTRS1979

Anisotropic friction, deformation, and fracture of single-crystal silicon carbide at room temperature

Anisotropic friction, deformation, and fracture studies were conducted with /0001/, /10(-1)0/, and /11(-2)0/ silicon carbide surfaces in sliding contact with diamond. The experiments were conducted with loads of 0.1, 0.2, and 0.3 N at a sliding velocity of 3 mm/min in mineral oil or in dry argon at room temperature. The 1010 direction on the basal /0001/ plane exhibits the lowest coefficient of friction and the greatest resistance to abrasion for silicon carbide. Anisotropic friction and deformation of the /0001/, /10(-1)0/, and /11(-2)0/ silicon carbide surfaces are primarily controlled by the slip system /10(-1)0/ 11(-2)0. The anisotropic fracture during sliding on the basal plane is due to surface cracking along /10(-1)0/ and subsurface cracking along /0001/. The fracture during sliding on the /11(-2)0/ or /10(-1)0/ surfaces is due to surface cracking along /0001/ and /11(-2)0/ or /10(-1)-1 and to subsurface cracking along /10(-1)0/.

Miyoshi, K.↗
NASA NTRS1980

Wear particles of single-crystal silicon carbide in vacuum

Sliding friction experiments, conducted in vacuum with silicon carbide /000/ surface in contact with iron based binary alloys are described. Multiangular and spherical wear particles of silicon carbide are observed as a result of multipass sliding. The multiangular particles are produced by primary and secondary cracking of cleavage planes /000/, /10(-1)0/, and /11(-2)0/ under the Hertzian stress field or local inelastic deformation zone. The spherical particles may be produced by two mechanisms: (1) a penny shaped fracture along the circular stress trajectories under the local inelastic deformation zone, and (2) attrition of wear particles.

Miyoshi, K.↗
NASA NTRS1980

Study program to improve the open-circuit voltage of low resistivity single crystal silicon solar cells

The results of a 14 month program to improve the open circuit voltage of low resistivity silicon solar cells are described. The approach was based on ion implantation in 0.1- to 10.0-ohm-cm float-zone silicon. As a result of the contract effort, open circuit voltages as high as 645 mV (AMO 25 C) were attained by high dose phosphorus implantation followed by furnace annealing and simultaneous SiO2 growth. One key element was to investigate the effects of bandgap narrowing caused by high doping concentrations in the junction layer. Considerable effort was applied to optimization of implant parameters, selection of furnace annealing techniques, and utilization of pulsed electron beam annealing to minimize thermal process-induced defects in the completed solar cells.

Minnucci, J. A.↗