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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 73 records · Page 4
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

Anisotropic electrical properties of NiO x /β-Ga 2 O 3 p-n heterojunctions on (2̅01), (001), and (010) crystal orientations

Abstract NiO x / β -Ga 2 O 3 p-n heterojunctions fabricated on ( 2 ̅ 01 ) , ( 001 ) , and ( 010 ) β -Ga 2 O 3 substrates show distinctly anisotropic electrical properties. All three devices exhibited excellent rectification ≥10 9 , and turn-on voltages >2.0 V. The ( 010 ) device showed very different turn-on voltage, specific on-resistance, and reverse recovery time compared with ( 2 ̅ 01 ) and ( 001 ) devices. Moreover, it is calculated that the interface trap state densities for ( 2 ̅ 01 ) , ( 001 ) , and ( 010 ) plane devices are 4.3 × 10 10 , 7.4 × 10 10 , and 1.6 × 10 11 eV –1 cm –2 , respectively. These differences in the NiO x / β -Ga 2 O 3 heterojunctions are attributed to the different atomic configurations, the density of dangling bonds, and interface trap state densities.

Physics↗
NASA NTRS1978

Moessbauer study in thin films of FeSi2 and FeSe systems

Thin films of FeSi2 and FeSe were studied using Moessbauer spectroscopy information regarding dangling bond configuration and nature of crystal structure in thin films was derived. A significant influence of crystalline aluminum substrate on film structure was observed.

Escue, W. J.↗
NASA NTRS1983

Characterization of grain boundaries in silicon

Zero-bias conductance and capacitance measurements at various temperatures were used to study trapped charges and potential barrier height at the boundaries. Deep-level transient spectroscopy (DLTS) was applied to measure the density of states at the boundary. A study of photoconductivity of grain boundaries in p-type silicon demonstrated the applicability of the technique in the measurement of minority carrier recombination velocity at the grain boundary. Enhanced diffusion of phosphorus at grain boundaries in three cast polycrystalline photovoltaic materials was studied. Enhancements for the three were the same, indicating that the properties of boundaries are similar, although grown by different techniques. Grain boundaries capable of enhancing the diffusion were found always to have strong recombination activities; the phenomena could be related to dangling bonds at the boundaries. Evidence that incoherent second-order twins of (111)/(115) type are diffusion-active is presented.

Cheng, L. J.↗
NASA NTRS1982

Enhanced diffusion of phosphorus at grain boundaries

Enhanced diffusion of phosphorus at grain boundaries in cast polycrystalline photovoltaic materials (Wacker, HEM, and Semix) was studied. It was found that the enhancements for the three materials were the same, indicating that the properties of boundaries are similar, even though they were grown by different techniques. In addition, it was observed that grain boundaries capable of enhancing the diffusion always have strong recombination activities. Both phenomena could be related to dangling bonds existing at the boundaries. The present study gives the first evidence that incoherent second order twins of 111/115-plane type are diffusion-active.

Cheng, L. J.↗
NASA NTRS1985

Use of low energy hydrogen ion implants in high efficiency crystalline silicon solar cells

This program is a study of the use of low energy hydrogen ion implantation for high efficiency crystalline silicon solar cells. The first quarterly report focuses on two tasks of this program: (1) an examination of the effects of low energy hydrogen implants on surface recombination speed; and (2) an examination of the effects of hydrogen on silicon regrowth and diffusion in silicon. The first part of the project focussed on the measurement of surface properties of hydrogen implanted silicon. Low energy hydrogen ions when bombarded on the silicon surface will create structural damage at the surface, deactivate dopants and introduce recombination centers. At the same time the electrically active centers such as dangling bonds will be passivated by these hydrogen ions. Thus hydrogen is expected to alter properties such as the surface recombination velocity, dopant profiles on the emitter, etc. In this report the surface recombination velocity of a hydrogen emplanted emitter was measured.

Fonash, S. J.↗
NASA NTRS1990

Semiconductor surface sublimation energies and atom-atom interactions

The energy required to remove an atom from semiconductor surfaces is calculated using a Green's-function approach. Contrary to intuition, it is found that, in some cases, less energy is needed to remove an atom from the nearly full surface than from a nearly empty surface. The results are explained in terms of the relative energies of anion and cation dangling bonds, and the charge transfers between them. The deducted effective pair-interaction energies and their effects on surface morphology and growth perfection are discussed.

Krishnamurthy, Srinivasan↗
NASA NTRS1997

Au Colloids Formed by Ion Implantation in Muscovite Mica Studied by Vibrational and Electronic Spectroscopes and Atomic Force Microscopy

Au was implanted into the (001) surface of Muscovite mica at an energy of 1.1 MeV and at doses of 1, 3, 6, and 10 x 10(exp 16) ions/cu cm. Optical spectra of the as-implanted samples revealed a peak at 2.28 eV (545 nm) which is attributed to the surface plasmon absorption of Au colloids. The infrared reflectance measurements show a decreasing reflectivity with increasing ion dose in the Si-O stretching region (900-1200 /cm). A new peak observed at 967 /cm increases with the ion dose and is assigned to an Si-O dangling bond. Atomic force microscopy images of freshly cleaved samples implanted with 6 and 10 x 10(exp 16) ions/sq cm indicated metal colloids with diameters between 0.9- 1.5 nm. AFM images of the annealed samples showed irregularly shaped structures with a topology that results from the fusion of smaller colloids.

Tung, Y. S.↗
NASA NTRS2009

Irradiation with molecular hydrogen as an accelerated total dose hardness assurance test method for bipolar linear circuits

High dose rate irradiation with hydrogen stress is proposed as an accelerated total dose test method for bipolar linear circuits. The method is validated across process and circuit technologies with five parts that are commonly used in space: a comparator (LM193 from National Semi-conductor), a voltage regulator (HSYE-117 RH from Intersil), a voltage reference (LT1019 from Linear Technology), a JFET input op amp (OP42 from Analog Devices) and a temperature transducer (AD590 from Analog Devices). The testing technique could rapidly establish an upper bound to the low dose rate response of parts in space and help with the part selection process in the design phase of a mission. The technology dependence and the viability of this technique are qualitatively explored using a physical model describing the dose rate response and the effect of hydrogen in bipolar technologies. The model uses four core processes: 1) space charge effects, 2) free electron/hole pair recombination, hole-hydrogen defect reactions in the oxides and 4) proton depassivation of dangling bonds at the Si/SiO2 interface. Radiation hardness assurance implications are discussed.

Pease, Ron↗
NASA NTRSDate not supplied

Quantum Mechanical Simulations of Dynamics of Electronic Excitations in Low-Dimensional Photovoltaics Materials

Dynamics of electronically excited states including exciton generation and relaxation, exciton-exciton interaction, and charge/energy transfer and transport, are critical to understanding and optimizing photovoltaic materials. Although considerable progress has been made, accurate experimental characterization of such crucial dynamics remains extremely challenging, especially in low-dimensional materials. In this talk, I will discuss how the advancement of quantum mechanical simulations of the dynamics of electronic excitations can reveal the physical mechanisms hindering or improving solar energy harvest. Specifically, we find that surface dangling-bond defects on silicon quantum dots cause rapid charge recombination and low carrier mobility in the inorganic-organic PV cells. Although small quantum dots are essentially free of defects, their optical gaps are too large. To solve this issue, a full-spectrum-light-absorption scheme is computationally designed, taking advantage of complexity and flexibility of low-dimensional materials consisting of different characteristics and dimensions. In this scheme the multifunctional ligands are used to (1) passivate against oxidation, (2) facilitate interfacial charge transfer, and (3) improve both charge transport and optical absorption. A joint theoretical and experimental study has demonstrated the feasibility of this approach. Finally, I will briefly talk about how this scheme and the well-tested quantum mechanical simulations can be employed to help improve energy-conversion efficiency in perovskite photovoltaics including perovskite-based tandem cells.

Zhigang Wu↗
DOE OSTI2022

Hydrogen Transport from Dielectrics to poly-Si/SiOx Passivating Contacts Measured by Mass Spectrometry and Vibrational Spectroscopy

We demonstrate the relationship between Si solar cell passivation and hydrogen content of various passivating films, including hydrogenated amorphous silicon (a-Si:H), aluminum oxide (Al2O3), silicon nitride (SiNx) and combinations thereof. Through isotopic studies using quadrupole mass spectrometry (QMS), Fourier transform infrared spectroscopy (FTIR), and Raman spectroscopy, we determine how hydrogen content and stability within each type of film relates to final passivation quality of solar cell test structures. Si solar cells using polycrystalline silicon on silicon oxide (poly-Si/SiOx) passivating contacts are at the forefront of Si solar cell research and emerging as top performers within industrial production. Performance of passivating contact Si solar cells is largely determined by a parameter known as the open-circuit voltage Voc, which directly relates to material quality within the bulk of the device and at surfaces. High Voc is achieved when defects within the bulk crystalline silicon (c-Si) and at interfaces are passivated, preventing them from acting as charge carrier recombination centers. One of the most important means of passivating defects within Si solar cells is via hydrogenation, injecting the cells with large amounts of H to satisfy dangling bonds in the bulk and at interfaces. Hydrogen is especially important in deactivating a prevalent defect in industrial p-type devices which leads to decreased device performance over long-term exposure to light, called light-induced degradation (LID). Some of the most common materials used to supply H to devices are a-Si:H, Al2O3, and SiNx, which can contain very large amounts of H. Upon annealing at elevated temperatures, the hydrogen becomes mobile enough to find and disable defect sites. However, too much hydrogen can also be problematic, sometimes leading to an effect called light and elevated temperature induced degradation (LeTID). It has been shown that these films passivate the interfaces of poly-Si passivating contacts differently, leading to differing performance. Though Al2O3 is a well-defined dielectric material, SiNx can have many different values of x depending on precursor gases and deposition conditions. We observe different FTIR and Raman spectra from different SiNx over a range of x values films to determine the bonding environments within them and further correlate the relative concentrations of Si, N, and H to the stability of H within SiNx and the passivation performance of each film. Because deuterium is chemically identical to hydrogen within these systems, but gives different signals in FTIR and Raman spectroscopy as well as in QMS, isotopic substitution can be used as an excellent tool to probe the H within films. In addition to measuring the H and D bonding within films using FTIR and Raman spectroscopy, we will use such isotopic experiments to observe H and D movement out of these hydrogenating films at elevated temperatures using QMS to determine the stability of H bonding within such systems. With these films characterized based on elemental composition, we will relate such measurements to passivation quality of these films and combinations thereof on poly-Si/SiOx contact structures using quasi-steady state photoconductance decay measurements to obtain implied open-circuit voltage (iVoc) and saturation current density J0 values. Such investigations into the performance of different passivating films and film stacks will lead to greater understanding of dielectrics in semiconductor devices, further improvements in passivated contact design, and eventually, greater proliferation of renewable solar energy worldwide.

Al2O3↗
DOE OSTI2022

Room Temperature, Dip Coating Organic Passivation for c-Si Surfaces

Surface passivation of crystalline Si (c-Si) to reduce recombination rate is crucial to obtain high-efficiency c-Si solar cells. A fast passivation technique that can be performed at room temperature is needed when studying the degradation behaviors using various characterization methods to not destroy the degraded states. In this contribution, we explore Nafion via dip coating on n-type Cz wafers. We show that both the Nafion concentration and the conditions of surface and edge affect the passivation quality, and we achieve excellent passivation quality of iVoc of 716 mV, with a saturation current density (J0) of 7 fA/cm2. Additionally, electron paramagnetic resonance (EPR) shows Nafion can be used under cryogenic temperature and reveals the reduction of Si dangling bond after Nafion treatment.

dielectric solar cell↗
DOE OSTI2023

Defect Characterization of Monocrystalline Silicon Solar Cells with Polysilicon Passivated Contact Using Electrically-Detected Magnetic Resonance (EDMR) Spectroscopy

As the c-Si based solar cell efficiencies are approaching over 26%, it is becoming critical to characterize the low concentrations of the defects – as low as 10^10-10^11 cm-3 (for e.g., iron contamination in high-lifetime Ga-doped wafers3 and n-type wafers), and further reduce them. Also, atomistic level understanding of the mechanisms of the low concentration process-induced-defects and reliability limiting defects (such as light and elevated temperature induced degradation, surface passivation degradation) is needed to design the mitigation strategies. The conventional characterization techniques are limited due to their detection limitations. Some of the techniques based on lifetime spectroscopies can still be used for low concentration characterization however, they are based on estimations and theoretical models and hence, indirect and cannot fully reveal information about the microscopic mechanism of the defects. Thus, we present the application of an ultrasensitive magnetic resonance-based technique for the direct spectroscopic detection of the defects in Si PV - electrically detected magnetic resonance (EDMR). In this work, we aim to focus on establishing a process flow for fabrication of minicells with (miniature replica of the larger-area cells) and setting up the routine for EDMR measurements on them with the EDMR instrumentation capability at NREL. For the EDMR measurements, sample size is limited by the dimensions of sample holder tube (width less than 3.2 mm, active area - 20 mm). Thus, we have designed c-Si based minicells with polysilicon (poly-Si) passivated contacts same as the larger-area cells that we fabricate in our group at NREL. We also modified our minicell process flow for fabricating the textured minicells for preserving the texture during processing and taking care of the laser-ablation edge damage which can significantly affect the performance of such small devices. We have achieved comparable performance on these newly fabricated minicells as that of our 4 cm2 devices with same structure (comparable VOC, JSC, FF). We also conducted EDMR measurements on the minicells and observed a distinct EDMR signal at g-value ~2.005 at temperatures 30K and above, as shown in Fig. 2. We associate this signal to the presence of silicon dangling bonds based on the g-value. We also observed an EDMR signal at g-value ~1.998 at temperature ~5K. The origin of this signal is still being investigated. Thus, we show the proof of concept of minicells and EDMR measurements with which we now aim to study some of the unknown defects in silicon solar cell devices.

EDMR↗
DOE OSTI2020

Atomic structure and grain shape evolution of nanodiamond during annealing in oxidizing atmosphere from neutron diffraction and MD simulations

In this work, real space pair-distribution function (PDF) analysis in conjunction with molecular dynamics (MD) simulations was applied to characterize crystal structure, shape and surface structure of diamond nanoparticles annealed in air up to 880 °C. MD simulated models of individual nanodiamond particles of various shapes and sizes were used to calculate theoretical radial distribution functions G(r) for powders with different grain size distributions. The calculated curves, showing distinct differences for the explored parameter space, were compared to the experimental G(r) functions obtained from neutron scattering for annealed detonated nanodiamond samples in a search for a model best describing the actual powders. It was found that as-synthesized nanodiamond grains are terminated by equally abundant (100), (110) and (111) crystallographic faces and their structure does not change upon annealing in air up to 280 °C. The shape and size of grains annealed above 480 °C changes due to surface etching. The etching rate differs between crystals faces and depends on temperature, resulting in the observed differences in grain shape. Below 680 °C the share of the (110) facets gradually increases and at 680 °C the grains become rhombic dodecahedra terminated solely by (110) surfaces. Further increase of the annealing temperature promotes formation of (111) surfaces and at 880 °C the preferred grain shape becomes an octahedron terminated by a variant of (111) surfaces possessing three dangling sp3 bonds per atom. At lower temperatures all grains become smaller and the size distribution moves towards the lower values. Furthermore, as the annealing temperature increases, the smallest grains disappear entirely and the average grain size grows back.

36 MATERIALS SCIENCE↗
DOE OSTI2021

First-principles study of the surface properties of LiAl 5 O 8 : Stability and tritiated water formation

LiAl 5 O 8 is an important secondary phase of γ-LiAlO 2 ceramics in tritium ( 3 H, T)-producing burnable absorber rods (TPBARs), present in small quantities in the as-fabricated condition and in larger quantities after irradiation due to Li burnup and mobility in the radiation-damaged lattice. In this work, we performed first-principles calculations to study the stabilities and structures of LiAl 5 O 8 surfaces the possibility of T 2 O formation on the (111) surface. By calculating the surface energies of all possible symmetrical stoichiometric and nonstoichiometric low-index surfaces, we identified the two most stable surfaces, one stoichiometric (001) surface and one nonstoichiometric (111) surface in an O-rich condition. The surface oxygen atoms on the nonstoichiometric (111) surface have remarkable displacements after relaxation, due to the large dangling O bonds. Considering a Li-poor and 3 H-rich condition relevant to TPBARs, we further studied these two stable surfaces with 37.5%, 75%, and 100% surface O atoms covered by 3 H atoms. Our results show that the 3H saturation is favorable for the nonstoichiometric (111) surface but not for the stoichiometric (001) surface. In addition, the structure of nonstoichiometric (111) surface is well stabilized when the surface O atoms are 100% saturated by 3 H atoms. Based on the fully 3H-saturated (111) surface, the 3 H 2 O desorption with an energy barrier of 0.69 eV is preferable in the 3 H-rich condition.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Real-space solution to the electronic structure problem for nearly a million electrons

We report a Kohn–Sham density functional theory calculation of a system with more than 200 000 atoms and 800 000 electrons using a real-space high-order finite-difference method to investigate the electronic structure of large spherical silicon nanoclusters. Our system of choice was a 20 nm large spherical nanocluster with 202 617 silicon atoms and 13 836 hydrogen atoms used to passivate the dangling surface bonds. To speed up the convergence of the eigenspace, we utilized Chebyshev-filtered subspace iteration, and for sparse matrix–vector multiplications, we used blockwise Hilbert space-filling curves, implemented in the PARSEC code. For this calculation, we also replaced our orthonormalization + Rayleigh–Ritz step with a generalized eigenvalue problem step. We utilized all of the 8192 nodes (458 752 processors) on the Frontera machine at the Texas Advanced Computing Center. We achieved two Chebyshev-filtered subspace iterations, yielding a good approximation of the electronic density of states. Our work pushes the limits on the capabilities of the current electronic structure solvers to nearly 106 electrons and demonstrates the potential of the real-space approach to efficiently parallelize large calculations on modern high-performance computing platforms.

Chemistry↗
NASA NTRS2006

A Model Study of the Thermal Evolution of Astrophysical Ices

We address the question of the evolution of ices that have been exposed to radiation from stellar sources and cosmic rays. We studied in the laboratory the thermal evolution of a model ice sample: a mixture of water, hydrogen peroxide, dioxygen, and ozone produced by irradiating solid H2O2 with 50 keV H(+) at 17 K. The changes in composition and release of volatiles during warming to 200 K were monitored by infrared spectroscopy, mass spectrometry, and microbalance techniques. We find evidence for voids in the water component from the infrared bands due to dangling H bonds. The absorption from these bands increases during heating and can be observed at temperatures as high as approx. 155 K. More O2 is stored in the radiolyzed film than can be retained by codeposition of O2 and H2O. This O2 remains trapped until approx. 155 K, where it desorbs in an outburst as water ice crystallizes. Warming of the ice also drastically decreases the intrinsic absorbance of O2 by annealing defects in the ice. We also observe loss of O3 in two stages during heating, which correlates with desorption and possibly chemical reactions with radicals stored in the ice, triggered by the temperature increase.

Loeffler, M. J.↗
DOE OSTI2026

Power conversion in SnS photocathodes made by electrochemical growth is limited by recombination at (002) buried facets

Herzenbergite α-SnS is a promising p-type semiconductor for photovoltaic and solar fuel applications, but current devices are plagued by substantial photovoltage losses. Here we use vibrating Kelvin probe surface photovoltage for the first time to study the recombination losses in microcrystalline SnS photoelectrodes. α-SnS films of varied crystal orientation, size, and shape are obtained by electrochemical growth from aqueous tin( II ) chloride and sodium thiosulfate solutions near room temperature. After application of a CdS passivation layer, the films function as photocathodes for the methylviologen reduction reaction. Photoelectrochemical and surface photovoltage measurements reveal that the performance of these devices is sensitively controlled by mainly the SnS crystal orientation and to a lesser extent by the grain size. For example, the highest charge recombination rates of 8.97 × 10 14 s −1 cm −2 and lowest photocurrent (0.73 mA cm −2 ) and lowest photovoltage (0.12 V) occur for SnS films containing 500 nm crystals with irregular shapes and SnS lattices tilted away from the (001) orientation. On the other hand, the best performance (1.62 mA cm −2 , 0.16 V, 3.32 × 10 12 s −1 cm −2 ) is seen for 1100 nm fully (001) oriented SnS nanoplates. Furthermore, these findings agree with improved charge carrier mobility in the 001 direction and they also show that charge recombination in SnS films occurs mainly at dangling Sn–S bonds at buried (002) facets. Such buried interfaces need to be suppressed for optimized solar energy conversion with SnS.

Najaf, Zainab [University of California, Davis, CA↗
DOE OSTI2021

Dynamic behavior of chemically tunable mechano-responsive hydrogels

Here, using theory and simulation, we model the mechanical behavior of gels that encompass loops and dangling chain ends. If the loops remain folded and dangling ends are chemically inert, then these topological features just serve as defects. If, however, the loops unfold to expose the hidden (“cryptic”) binding sites and the ends of the dangling chains are reactive, these moieties can form bonds that improve the gel's mechanical properties. For gels with a lower critical solubility temperature (LCST), we systematically switch on the possible unfolding and binding events. To quantify the resulting effects, we derive equations for the gel's equilibrium and dynamic elastic moduli. We also use a finite element approach to simulate the gel's response to deformation and validate the analytic calculations. Herein, we show that the equilibrium moduli are highly sensitive to the presence of unfolding and binding transitions. The dynamical moduli are sensitive not only to these structural changes, but also to the frequency of deformation. For example, when reactive ends bind to exposed cryptic sites at T = 29 °C and relatively high frequency, the storage shear modulus is 119% greater than the corresponding equilibrium value, while the storage Young's modulus is 109% greater than at equilibrium. These findings provide guidelines for tuning the chemical reactivity of loops and dangling ends and the frequency of deformation to tailor the mechano-responsive behavior of polymer networks.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗