Vacancy Formation in Gold Under High Pressure
Crystal structure defect concentration from measurement of excess electric resistance in gold wires subjected to high hydrostatic pressure
WIRE↗
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Automatic Incorporation of Flaws into Cad and FEA Models Based On Measured NDE Data
Automatic incorporation of non-destructive evaluation (NDE) data into CAD and finite element (FE) models for structural analysis is essential for accurate residual-life and strength analyses of composite structures. Currently, two significant but independent challenges exist for incorporating NDE data in such analyses: interpretation of the NDE signals to locate and characterize the structural defects and the incorporation of that information into structural analysis tools. The first challenge will be addressed through linear inversion of calculated synthetic responses generated by a simulation engine to evaluate flaw size, location, and other characteristics. The second challenge will be addressed by building on prior and parallel defect modeling efforts to integrate suitable flaw models into the CAD/finite-element representation of a specimen. Ultrasonic NDE information is usually represented using C-Scans of time-of-flight or intensity information. Other modalities such as thermography and computed tomography (CT) could also be used to characterize the structure. This information will first be projected into material coordinates and then aligned with the specimen’s finite element mesh. The NDE data can then be incorporated by inserting flaw geometry into the CAD and FE analysis model and automatic modification of local material properties and boundary conditions. This process will enable the use of structural analysis tools even for practical modalities such as ultrasound and thermography which may not directly give accurate-enough geometric information to fully define the flaw. The full flaw characteristics will be inferred using prior expert and modeling knowledge to categorize flaw signatures. Outputs for this project will include demonstrated methods for creating structural analysis geometric models that incorporate flaw characterization information; these models can then be used directly in popular commercial FEA software. In addition, the primary deliverable for the project will include a software that will be able to automatically incorporate different kinds of flaws into an existing FE models. The models will be generated in standard file formats to enable direct import into the analysis software.
Adarsh Krishnamurthy↗
Scalar Atomic Defect-Based Solid-State Self-calibrating Magnetometer (3SM) for Space Plasma Analysis
The Earth’s magnetosphere is a system of multiple, co-located particle populations interacting via plasma waves. Things to understand are driving processes, radiation belt and ring current issues, auroral physics, internal plasma processes, and magnetosphere-ionosphere mapping issues. These plasma-physics processes enable the Earth’s magnetosphere to evolve in response to temporal changes in the solar wind and they underlie the phenomena of space weather, which impacts spacecraft systems, astronauts, radio communications, and ground based electric-power grids. The objective of 3SM is to measure magnetic field strength and to calibrate the Vector Magnetometer (VM) device to maintain absolute accuracy during a mission. The 3SM features make the instrument preferably suited not only for the traditional role of scalar magnetometers as absolute references for the calibration of the on-board vector instruments, but also for extended operational capacities, such as higher frequency scalar measurements (of potential interest for magnetosphere studies for the low frequency part of the spectrum) or autonomous scalar / vector operations. Diamond has been the solid-state platform of choice for quantum device technologies for some time, however, it suffers from difficulties such as scalability, integration, and cost. While the diamond platform is very useful for quantum technologies, further development is needed to make it viable. The material platform of choice for NASA Glenn’s Quantum Sensing And Spin Physics (Q-SASP) is silicon carbide (SiC). This is due to the much higher industry development of the SiC material platform for high-power and high-temperature electronics. It leverages both the decades-long SiC development expertise and infrastructure at NASA Glenn and its growing capabilities in quantum metrology. To make SiC devices usable for quantum technologies such as quantum sources, a much deeper understanding of defects is needed. Q-SASP is developing quantum metrology capabilities to evaluate the energy structure, defect formation energy, band structure augmentation, generation/recombination rates, and limits of dipole-dipole coupling in non-metal implanted SiC devices. This can be achieved by analysis of zero-field splitting, low-field resonance, and singlet-triplet mixing through various forms of Electrically Detectable Magnetic Resonance (EDMR) and Near-Zero Field Magnetic Resonance (NZFMR) spectroscopy. This work will discuss recent system developments, device developments, computational modeling, and spectroscopy results and analysis of defects created by non-metal implantations in SiC devices. The defect formation energies of V Si ,V C , V C V Si , N C V Si , N Si , N C in 4H-SiC are previously reported values in other research [2]-[3]. The defect formation energies of PSi and PC were calculated in GPAW [fig 1A]. The basic underlying mechanism of the zero-field phenomenon is the mixing of singlet and triplet states [4]-[5]. In most spin-dependent transport, two electron spins are involved, and thus one must consider each of their interactions with the field. We investigated the electronic and magnetic properties of 4H-SiC and 6H-SiC. The defect formation energy helps us determine what types of defects we are observing in the SiC EDMR experiment. They have very low formation energy (it is negative). The phosphorus substitution in 4H-SiC is a very stable defect. The band diagrams provide us with vital information about how the electronic properties of SiC (such as band gap) change as we add non-metal defects. The zero-field splitting parameters allow us to study the inflection point in the NZFMR [fig 1B]. We clearly observed zero-field splitting. We also noted that the zero-field splitting remained constant with changing bias. We aspect it zero-field splitting to remain constant while the hyperfine and exchange interaction perturbations shift under the influence of an external magnetic field. This is the essence of quantum magnetometry and self-calibration.
space plasma↗
Thermographic Inspections Save Skins and Prevent Blackouts
Scanning thermography involves heating a component s surface and subsequently measuring the surface temperature, using an infrared camera to identify structural defects such as corrosion and disbonding. It is a completely noninvasive and noncontacting process. Scans can detect defects in conventional metals and plastics, as well as in bonded aluminum composites, plastic- and resinbased composites, and laminated structures. The apparatus used for scanning is highly portable and can cover the surface of a test material up to six times faster than conventional thermography. NASA scientists affirm that the technology is an invaluable asset to the airlines, detecting potential defects that can cause structural failure.In 1996, ThermTech Services, Inc., of Stuart, Florida, approached NASA in an effort to evaluate the technology for application in the power and process industries, where corrosion is of serious concern. ThermTech Services proceeded to develop the application for inspecting boiler waterwall tubing at fossil-fueled electric-generating stations. In 1999, ThermTech purchased the rights to NASA s patented technology and developed the specialized equipment required to apply the inspecting method to power plant components. The ThermTech robotic system using NASA technology has proved to be extremely successful and cost effective in performing detailed inspections of large structures such as boiler waterwalls and aboveground chemical storage tanks. It is capable of inspecting a waterwall, tank-wall, or other large surfaces at a rate of approximately 10 square feet per minute or faster.
Source record↗
Silicon sheet growth development for the large area silicon sheet task of the low cost solar array project. Quantitative analysis of defects in silicon
The various steps involved in obtaining quantitative information of structural defects in crystalline silicon samples are described. Procedures discussed include: (1) chemical polishing; (2) chemical etching; and (3) automated image analysis of samples on the QTM 720 System.
Natesh, R.↗
TPSAS-NF1676L-16388-DND
The 60° rotated twin defect on {111} planes is one of the most common crystal structure defects in the cubic semiconductors. This defect has a sigma-3 grain boundary commonly called the sigma-3 twin defect on {111} plane. Sigma-3 twin defects are also frequently found in the group IV semiconductors (Si, Ge, C) in a diamond structure and other cubic zinc blende III-V and II-VI compound semiconductors such as GaP, InP, InGaAs, CdTd and ZnSe.
Yeonjoon Park↗
Hgi2 Sub 2 Crystal Growth for Nuclear Detectors
The objectives of this program are to obtain a benchmark quality sample grown at low-g conditions and to study vapor growth phenomena under space conditions. Ground-based crystals show a defect structure which impairs their performance as nuclear radiation detectors. These defects may be caused by the gravitational force acting on the crystal in its weakended state at the elevated growth temperature and by irregular convection patterns in the vapor during growth. Mechanical strength measurements have been performed (uniaxial compression tests) which show that the crystals exhibit slip parallel to the c-planes at stresses as low as 1/2 psi. Preliminary calculations using a simple linearized model indicate the oscillating instabilities in the convection part of the vapor transport system are unlikely, even at 1-g, provided that the utmost care is taken in the preparation of the crystal growth source material.
Schnepple, W. F.↗
The present state and the future direction of eddy viscosity models
Information is given in viewgraph form on the present state and future direction of eddy viscosity models. Topics covered include the eddy viscosity dilemma, two-equation models, equations of motion, free shear flows, incompressible free shear flows, model-predicted boundary layer structure, defect layer analysis, the effects of pressure gradients, viscous sublayer structure, wall functions and viscous damping, viscous damping for kappa-omega, the effects of compressibility, perturbation analysis of the wall layer, an alternative compressibility term, unsteady boundary layers, incompressible separation, backstep results, and compressible separation.
Wilcox, David C.↗
Cytogenic studies of blood (experiment M111)
The Skylab M111 experiment was a continuation of the preflight and postflight chromosomal analyses of the flight crews that have been performed since the Gemini 3 mission. The experiment was designed to determine whether some space flight parameter produces cytogenetic effects in human cells and to provide biological radiation dosimetric capability in the event of significant radiation exposure to a flight crew. On each of the Skylab flights, blood lymphocytes for analysis of chromosomes for structural defects were obtained from each of the prime crewmembers and from a ground-based control group before and after flight. Two types of defects were recorded. The minor defects included the following aberrations: chromatid fragments, chromosome fragments, and deletions. Structural rearrangements such as dicentrics, exchanges, ring chromosomes, and translocations were photographed, and the cells were karyotyped to delineate, when possible, the chromosome or chromosomes involved in the rearrangement. Result seems to indicate that the flight itself was not a major contributing factor.
Lockhart, L. H.↗
The impact of defects on the photovoltaic potential of RTR silicon ribbon
Silicon ribbon grown at a high rate by the ribbon-to-ribbon (RTR) method contains a variety of defects and can exhibit an unusual dendritic morphology. This paper is a study of the effect of the defect structure and dendritic morphology on the photovoltaic potential of RTR ribbon. Defects found in RTR ribbon include grain boundaries, twin planes, stacking faults and dislocations. The electrical activity of these defects is investigated by measuring the diffusion length in the ribbon; by fabricating small area diodes on the ribbon and evaluating their photoresponse; and by using a scanning electron microscope in the electron beam induced current mode. It is concluded that although grain boundaries serve very effectively as recombination centers, they do not occur frequently enough in RTR ribbons to significantly affect the generation current. Dislocation densities up to 1,000,000/sq cm can be tolerated without strongly reducing the photoresponse. Similarly, linear boundaries such as twin planes or stacking faults do not affect the cell performance up to densities of 1000/sq cm.
Baghdadi, A.↗
High-efficiency cell concepts on low-cost silicon sheets
The limitations on sheet growth material in terms of the defect structure and minority carrier lifetime are discussed. The effect of various defects on performance are estimated. Given these limitations designs for a sheet growth cell that will make the best of the material characteristics are proposed. Achievement of optimum synergy between base material quality and device processing variables is proposed. A strong coupling exists between material quality and the variables during crystal growth, and device processing variables. Two objectives are outlined: (1) optimization of the coupling for maximum performance at minimal cost; and (2) decoupling of materials from processing by improvement in base material quality to make it less sensitive to processing variables.
Bell, R. O.↗
Electrical Characterization of Defects in SiC Schottky Barriers
We have been investigating the effect of screw dislocation and other structural defects on the electrical properties of SiC. SiC is a wide-bandgap semiconductor that is currently received much attention due to its favorable high temperature behavior and high electric field breakdown strength. Unfortunately, the current state-of-the-art crystal growth and device processing methods produce material with high defect densities, resulting in a limited commercial viability
Schnabel, C. M.↗
High Resolution Triple Axis X-Ray Diffraction Analysis of II-VI Semiconductor Crystals
The objective of this research program is to develop methods of structural analysis based on high resolution triple axis X-ray diffractometry (HRTXD) and to carry out detailed studies of defect distributions in crystals grown in both microgravity and ground-based environments. HRTXD represents a modification of the widely used double axis X-ray rocking curve method for the characterization of grown-in defects in nearly perfect crystals. In a double axis rocking curve experiment, the sample is illuminated by a monochromatic X-ray beam and the diffracted intensity is recorded by a fixed, wide-open detector. The intensity diffracted by the sample is then monitored as the sample is rotated through the Bragg reflection condition. The breadth of the peak, which is often reported as the full angular width at half the maximum intensity (FWHM), is used as an indicator of the amount of defects in the sample. This work has shown that high resolution triple axis X-ray diffraction is an effective tool for characterizing the defect structure in semiconductor crystals, particularly at high defect densities. Additionally, the technique is complimentary to X-ray topography for defect characterization in crystals.
Volz, H. M.↗
Rates and mechanisms of the atomic oxygen reaction with nickel at elevated temperatures
The oxidation of nickel by atomic oxygen at pressure from 1 to 45 N/sq m between 1050 and 1250 K was investigated. In these ranges, the oxidation was found to follow the parobolic rate law, viz., K sub p = 0.0000114 exp(-13410/T) g squared/cm4/sec for films of greater than 1 micron thickness and was pressure independent. The activation enthalpy for the oxidation reaction was 112 + or - 11 kj/mole (27 + or - 3 kcal/mole). Of a number of possible mechanisms and defect structures considered, it was shown that the most likely was a saturated surface defect model for atomic oxidation, based on reaction activation enthalpies, impurity effects, pressure independence, and magnitudes of rates. A model judged somewhat less likely was one having doubly ionized cationic defects rate controlling in both atomic and molecular oxygen. From comparisons of the appropriate processes, the following enthalpy values were derived: enthalpy of activation (Ni diffusion in Ni0) = 110 + or - 30 kj/mole and standard enthalpy change for reaction formation (doubly ionized cation vacancies in Ni0 from atomic oxygen)= -9 + or - 25 kj/mole.
Christian, J. D.↗
Recombination-active defects in silicon ribbon and polycrystalline solar cells
This paper reports results from a study of recombination-active structural defects in silicon ribbon and polycrystalline solar cells using the electron beam induced current (EBIC) technique in a scanning electron microscope. It is demonstrated that low temperature EBIC measurements can reveal a range of defects that are not observable at room temperature, including slip dislocations in silicon dendritic web ribbons as well as decorated twin boundaries and dislocation complexes in cast polycrystalline silicon solar cell materials.
Cheng, L. J.↗
Formation and chemical reactivity of carbon fibers prepared by defluorination of graphite fluoride
Defluorination of graphite fluoride (CFX) by heating to temperatures of 250 to 450 C in chemically reactive environments was studied. This is a new and possibly inexpensive process to produce new carbon-based materials. For example, CF 0.68 fibers, made from P-100 carbon fibers, can be defluorinated in BrH2C-CH = CH-CH2Br (1,4-dibromo-2butene) heated to 370 C, and graphitized to produce fibers with an unusually high modulus and a graphite layer structure that is healed and cross-linked. Conversely, a sulfur-doped, visibly soft carbon fiber was produced by defluorinating CF 0.9 fibers, made from P-25, in sulfur (S) vapor at 370 C and then heating to 660 C in nitrogen (N2). Furthermore, defluorination of the CF 0.68 fibers in bromine (Br2) produced fragile, structurally damaged carbon fibers. Heating these fragile fibers to 1100 C in N2 caused further structural damage, whereas heating to 150 C in bromoform (CHBr3) and then to 1100 C in N2 healed the structural defects. The defluorination product of CFX, tentatively called activated graphite, has the composition and molecular structure of graphite, but is chemically more reactive. Activated graphite is a scavenger of manganese (Mn), and can be intercalated with magnesium (Mg). Also, it can easily collect large amounts of an alloy made from copper (Cu) and type 304 stainless steel to form a composite. Finally, there are indications that activated graphite can wet metals or ceramics, thereby forming stronger composites with them than the pristine carbon fibers can form.
Hung, Ching-Cheh↗
Software Package Completed for Alloy Design at the Atomic Level
As a result of a multidisciplinary effort involving solid-state physics, quantum mechanics, and materials and surface science, the first version of a software package dedicated to the atomistic analysis of multicomponent systems was recently completed. Based on the BFS (Bozzolo, Ferrante, and Smith) method for the calculation of alloy and surface energetics, this package includes modules devoted to the analysis of many essential features that characterize any given alloy or surface system, including (1) surface structure analysis, (2) surface segregation, (3) surface alloying, (4) bulk crystalline material properties and atomic defect structures, and (5) thermal processes that allow us to perform phase diagram calculations. All the modules of this Alloy Design Workbench 1.0 (ADW 1.0) are designed to run in PC and workstation environments, and their operation and performance are substantially linked to the needs of the user and the specific application.
Bozzolo, Guillermo H.↗
Residual structure and mechanical properties of alpha brass and stainless steel following deformation by cold rolling and explosive shock loading
Mechanical responses and residual defect structures in brass and stainless steel following explosive shock loading and cold reduction by rolling
Grace, F. I.↗