Search NASA⌕ Search

SEARCH · Search NASA

Results for “defect types”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 73 records · Page 4
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Resolving local structural motifs across the phase evolution of zinc titanates with computational x-ray absorption spectroscopy

Resolving the local structure motifs that characterize phase evolution as a function of composition is a key challenge in structure characterization of complex materials. Here, in this study, we combine first-principles simulations and x-ray absorption near-edge structures (XANES) analysis to gain insights into the structure evolution revealed by measurements across a combinatorial zinc titanate thin film, which was grown with smoothly varying composition over a wide range of the Ti:Zn ratio. Specifically, we propose a cluster blind-signal-separation (cBSS) method for XANES spectral analysis based on a library of the structures and spectra of representative local motifs. In addition to motifs from zinc titanate crystals, two types of Ti-defect models constructed in this study are key to the understanding of the structure characteristics in the Zn-rich region. The cBSS method makes use of both spectral clustering of the simulated site-XANES spectra library and the BSS procedure to construct high-fidelity spectral basis functions from an experimental spectral sequence. The method provides a rigorous measure of the spectral sensitivity and basis completeness. The results of the XANES analysis are corroborated with other experimental modalities, including x-ray diffraction and spectroscopic ellipsometry, to validate the cBSS method. The calculated motif weights resulting from fitting the XANES spectra with the cBSS basis probe the atomic structure characteristics of both crystalline and amorphous phases as a function of the Ti/Zn composition. The insights of the local structure motif evolution are pivotal to the understanding of the nonmonotonic trend in the optical gap, which may lead to potential applications through tuning the optical properties of zinc titanate. The workflow of the XANES spectral analysis developed in this work can be generalized to construct the structure-property relationship in a broad material space.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Energy Barriers for H 2 Uptake and Release by Defects in Boron Nitride

Density functional theory simulations (DFT) have been used in combination with the climbing image nudged elastic band method (CI-NEB) to determine the energy barriers required to dissociate H 2 at four types of h-BN defects and evaluate the potential for reacted H species to hop to adjacent available sites. The defects were selected based on previous work in which ab initio thermodynamics was used to identify specific defects with optimal thermodynamics for reversible H 2 storage, that is, the defects would dissociate molecular H 2 while not binding H species too strongly so that hydrogen release is favorable. The four defects investigated are the N and B monovacancies, which only offer either B or N defective sites respectively, as well as larger cluster vacancy defects named 3V(1B2N) and hexagonal 6V(3B3N), which present a mixture of B and N defect sites available for H binding. While homogeneous H 2 dissociation by B and N monovacancies have energy barriers larger than 0.4 eV, we found that mixed BN terminated defects have energy barrier lower than 0.4 eV for H 2 dissociation. In particular, H 2 dissociation by the hexagonal 6V(3B3N) defect, exclusively made of Frustrated Lewis Pairs (FLPs), is almost barrierless. The energy barrier for subsequent H hopping to available adjacent B or N sites of the defect were also calculated. It was found that the hopping of H species generally involves high energy barriers ranging from 0.26 eV to 2.57 eV. In conclusion, this work completes previous thermodynamic theoretical investigations and provides a more comprehensive picture of H 2 reaction with defective h-BN for potential H 2 storage and recovery.

Sassi, Michel J. [Pacific Northwest National Labor↗
DOE OSTI2024

Application of Weak-Beam Dark-Field STEM for Dislocation Loop Analysis

Nanoscale dislocation loops formed by irradiation can significantly contribute to both irradiation hardening and embrittlement of materials when subjected to extreme nuclear reactor environments. Here, this study explores the application of weak-beam dark-field (WBDF) scanning transmission electron microscopy (STEM) methods for quantitative irradiation-induced defect analysis in crystalline materials, with a specific focus on dislocation loop imaging and analysis. A high-purity Fe-5 wt% Cr model alloy was irradiated with 8 MeV Fe 2+ ions at 450°C to a fluence of 8.8 × 10 19 m -2 , inducing dislocation loops for analysis. While transmission electron microscopy (TEM) has traditionally been the primary tool for dislocation imaging, recent advancements in STEM technology have reignited interest in using STEM for defect imaging. This study introduces and compares three WBDF STEM methods, demonstrating their effectiveness in suppressing background contrasts, isolating defect information for dislocation loop type classification, providing finer dislocation line images for small loop analysis, and presenting inside–outside contrast for identifying loop nature. Experimental findings indicate that WBDF STEM methods surpass traditional TEM approaches, yielding clearer and more detailed images of dislocation loops. The study concludes by discussing the potential applications of WBDF STEM techniques in defect analysis, emphasizing their adaptability across various material systems beyond nuclear materials.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Role of stacking defects on the magnetic behavior of CrCl 3

Here, in the study of van der Waals–layered magnetic materials, the properties of CrCl 3 continue to attract attention. This compound is reported to undergo antiferromagnetic ordering below ~14 K, with a ferromagneticlike region proposed to exist between 14 and 17 K. Ideally, the crystal structure is rhombohedral (R) below ~235 K, separated from a higher-temperature monoclinic (M) phase by a layer-sliding structural phase transition. However, the structural transition is often inhibited even in bulk single crystals, allowing M-type layer stacking, reported to have a 10-fold greater interlayer magnetic coupling than R-type stacking, to be present at low temperature. To clarify the effect of stacking defects on CrCl 3 , we report magnetization measurements on samples of varying crystalline quality. At low applied magnetic field, some crystals predominantly show the T N = 14 K peak, but other crystals show hysteretic behavior and a magnetization enhancement at a slightly higher temperature (14 < T ≲ 17 K.) Samples with anomalous behavior exhibit a transition around ~2 T in isothermal magnetization-field data, evidence that M-type stacking defects are the source of these anomalies. Ground powder samples are especially likely to show strongly anomalous behavior. We suggest that the anomalous behavior arises from few-layer magnetic domains that form just above T N in an environment of mixed interlayer magnetic coupling strength. We argue that the influence of M-type stacking boundaries on sublattice magnetization is already observable in reported neutron scattering data, and may be responsible for an enhancement near 17 K in reported specific heat data.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2024

Using ground state and excited state density functional theory to decipher 3d dopant defects in GaN

Abstract Using ground state density functional theory (DFT) and implementing an occupation-constrained DFT (occ-DFT) for self-consistent excited state calculations, we decipher the electronic structure of the Mn dopant and other 3 d defects in GaN across the band gap. Our analysis, validated with broad agreement with defect levels (ground-state calculations) and photoluminescence data (excited-state calculations), mandates reinterpretation and reassignment of 3 d defect data in GaN. The Mn Ga defect is determined to span stable charge states from (1−) in n -type GaN through (2+) in p -type GaN. The Mn(2+) is predicted to be a d 2 ground state spin triplet defect with a singlet excited state, isoelectronic with the defect associated with the 1.19 eV photoluminescence in n -type GaN. The combined analysis of defect levels and excited states invites reassessment of all d 2 -capable dopants in GaN. We demonstrate that the 1.19 eV defect, a candidate defect for optically controlled quantum applications, cannot be the Cr(1+) assumed in literature and instead must be the V(0). The combined ground-state/excited-state DFT analysis is shown to be able to chemically fingerprint defects.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2025

NSUF RTE completion report for 23-4780: Microstructural Defect Induced Thermal Conductivity Reduction in Uranium Nitride and Thorium Nitride

Uranium nitride (UN) is known to have a higher thermal conductivity than traditional oxide fuels, which could lead to a more efficient energy transport and lower local temperature during its lifetime. But the thermal transport performance of UN in extreme environments has not been systematic studied. This study investigated the irradiation induced microstructural defects in UN and the impacts on thermal conductivity. The samples were produced by spark plasma sintering at University of Texas-San Antonio (UTSA), Los Alamos National Laboratory (LANL), and Idaho National Laboratory (INL). Thermal conductivity of UN before and after 2MeV proton irradiation were measured by using laser metrology at INL in a temperature range of 77-295K. Thermal conductivity measurements in this wide, cryogenic temperature range is critical to understand the phonon scattering mechanisms between the thermal energy carrier, phonons, and different types of irradiation-induced defects. In order to ensure the measurements were conducted in the same grains and minimize the impact of the local heterogeneities, the measurement locations were highlighted by fiducial marks using the focused ion beam (FIB) with grain orientation identified using the electron backscatter diffraction (EBSD) at the Center of Advanced Energy Studies (CAES). Irradiation experiment was conducted at the Ion Beam Laboratory at Texas A&M University (TAMU). A total of 6 samples were irradiated with different irradiation doses and temperatures. After irradiation, the microstructure was characterized by using Transmission Electron Microscope (TEM) at CAES (also in the FIB marks).

36 - MATERIALS SCIENCE↗
DOE OSTI2025

Defect levels and self-compensation in iodine-doped CdTe single crystals

This study systematically documents defect levels in n-type iodine-doped cadmium telluride (CdTe:I) crystals as measured by thermoelectric effect spectroscopy, Hall-effect measurements, and photoluminescence and calculated by density functional theory. The primary donor, I Te , was identified with an activation energy of ∼0.05 eV (measured)/∼0.13 eV (calculated). Deep acceptor states, V Cd and I Te –V Cd complex, exhibited activation energies of ∼0.1 eV (measured)/∼0.19 eV (calculated) and ∼0.12 eV (measured)/∼0.24 eV (calculated), respectively. Self-compensation and Fermi level pinning were observed at ∼0.7 eV (measured)/∼1.08 eV (calculated), contributing to high resistivity in as-grown samples. Post-growth Cd annealing effectively removes compensation centers, releases iodine donors, and significantly reduces resistivity, resulting in an ideal n-type solar cell material.

Cd annealing↗
DOE OSTI2025

Ferroelectric Al 1− x B x N sputtered thin films on n -type Si bottom electrodes

Ferroelectric Al 1−x B x N thin films are grown on highly doped and plasma treated (100) n-type Si. We demonstrate ferroelectricity for x = < 0.01, 0.02, 0.06, 0.08, 0.13, and 0.17 where the n-type Si is both the substrate and bottom electrode. Polarization hysteresis reveals remanent polarization values between 130 and 140 μC/cm 2 and coercive field values as low as 4 MV/cm at 1 Hz with low leakage. The highest resistivity and most saturating hysteresis occurs with B contents between x = 0.06 and 0.13. We also demonstrate the impact of substrate plasma treatment time on Al 1−x B x N crystallinity and switching. Cross-sectional transmission electron microscopy and electron energy loss spectra reveal an amorphous 3.5 nm SiN x layer at the Al 1−x B x N interface post-plasma treatment and deposition. The first ~ 5 nm of Al 1−x B x N is crystallographically defective. Using the n-type Si substrate, we demonstrate Al 1−x B x N thickness scaling to 25 nm via low-frequency hysteresis and CV. Serving as the bottom electrode and substrate, the n-type Si enables a streamlined growth process for Al 1−x B x N for a wide range of Al 1−x B x N compositions and layer thicknesses.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Volumetric carrier injection in InGaN quantum well light emitting diodes

InGaN/GaN quantum well (QW) light emitting diodes (LEDs) are essential components of solid-state lighting and displays. However, the efficiency of long wavelength (green to red) devices is inferior to that of blue LEDs. To a large degree, this occurs because the equilibration of injected holes between multiple QWs of the active region is hindered by GaN quantum confinement and polarization barriers. This drawback could be overcome by volumetric hole injection into all QWs through semipolar QWs present on the facets of V-defects that form at threading dislocations in polar GaN-based structures. In this work, we have tested the viability of this injection mechanism and studied its properties by time-resolved and near-field spectroscopy techniques. Here, we have found that indeed the hole injection via the V-defects does take place, the mechanism is fast, and the hole spread from the V-defect is substantial, making this type of injection feasible for efficient long wavelength GaN LEDs.

InGaN/GaN quantum wells↗
DOE OSTI2025

First principles investigation of dopants and defect complexes in CdSe$_x$Te$_{1-x}$

Se alloying is a common approach to improve the performance of CdTe solar cells by tuning the bandgap, defect levels, and carrier density. A fundamental understanding of these improvements, specifically the effect of Se alloying on the behavior of defects and dopants in CdTe, remains unclear. Here, in this work, we present a density functional theory (DFT) study of point defect energetics in CdTe and CdSe x Te 1-x with x = 0.25, leading to a comparison of how native defects, dopants (As and Cu), impurities (Cl and O), and related defect complexes behave in CdTe vs CdSe x Te 1-x . Our calculations, performed by combining semi-local and nonlocal hybrid functionals, show a general lowering of the formation energies of native defects as well as substitutional defects formed by As and Cl upon Se addition. For successful p-type doping with As, destabilizing Cl-based defects in the CdSeTe lattice would be essential. We find evidence for some low-energy defect complexes of As, Cl, and O in CdSe 0.25 Te 0.75 . The computed defect formation energies further enable estimates of temperature-dependent defect concentrations and self-consistent Fermi levels. A comparison of defect energetics with the energies of impurity phases reveals that As, Cu, Cl, and O overwhelmingly prefer being segregated to unwanted As 2 O 5 , AsCl 3 , Cd 2 AsCl 2 , and CuO x phases rather than remain at defect sites, but such segregation is less likely to happen in CdSe 0.25 Te 0.75 than in CdTe. Overall, our work presents a list of likely defects and complexes in CdTe and Se-incorporated CdTe, paving the way to explain and mitigate limited dopant activation in experimental observations.

CdTe↗
DOE OSTI2024

Critical Review of LPBF Metal Print Defects Detection: Roles of Selective Sensing Technology

The integrative potential of LPBF-printed parts for various innovative applications depends upon the robustness and infallibility of the part quality. Eliminating or sufficiently reducing factors contributing to the formation of defects is an integral step to achieving satisfiable part quality. Significant research efforts have been conducted to understand and quantify the triggers and origins of LPBF defects by investigating the material properties and process parameters for LPBF-printed geometries using various sensing technologies and techniques. Frequently, combinations of sensing techniques are applied to deepen the understanding of the investigated phenomena. The main objectives of this review are to cover the roles of selective sensing technologies by (1) providing a summary of LPBF metal print defects and their corresponding causes, (2) informing readers of the vast number and types of technologies and methodologies available to detect defects in LPBF-printed parts, and (3) equipping readers with publications geared towards defect detection using combinations of sensing technologies. Due to the large pool of developed sensing technology in the last few years for LPBF-printed parts that may be designed for targeting a specific defect in metal alloys, the article herein focuses on sensing technology that is common and applicable to most common defects and has been utilized in characterization for an extended period with proven efficiency and applicability to LPBF metal parts defect detection.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Dynamic Scaling Analysis of Accelerated Irradiation Testing on Additive Manufacturing Materials by Positron Annihilation

The timely applications of Additive Manufacturing (AM) materials in nuclear environments require accelerated irradiation tests, mainly ion irradiation to enable rapid prototyping. Low dose ion irradiation would cause sub-nanostructure changes by generation of lattice defects, vacancies, vacancy clusters and voids and void swelling caused by cellular dislocations. Positron Annihilation Lifetime (PAL), a novel technology, sensitive towards sub-nanostructure morphology with high accuracy (about 10-7 vacancy per atom), supported by Transition Electron Microscope (TEM) would be applied to identify the type and total size of the defects. The subsequent PAL measurements and TEM surface studies would be followed by PAL analysis that includes sophisticated trapping model. The PAS results would become an input to dynamic scaling analysis (that predicts radiation effects from low dose studies for high dose effects), which incorporate mean-field theory model. The final effect is an in-depth understanding of the microstructure evolution of AM materials under ion irradiation which can be extrapolated to the studies of neutron irradiation, since ion-irradiation takes less time and do not cause the irradiation hazard. The working hypothesis is that PAL technology, that have excellent sensitivity to low-defect concentration would help to identify ion-induced material damage on the atomic and nano-scale level, which then could be extrapolated to understand the neutron damage better.

accelerated irradiation testing↗
DOE OSTI2025

Pressure-induced cation and vacancy disorder-order transition and near-zero τ f in deficient hexagonal perovskite Ba 8 ZnTa 6 O 24 dielectrics

Pressure applications can enable the tuning of atomic/defect ordering and provide access to new functional materials. Here, in this study, we report that pressure-induced structural transformation featuring disorder-order transition of both cations and vacancies in the 8-layer deficient hexagonal perovskite tantalate dielectrics Ba 8 ZnTa 6 O 24 , which transformed the structure from twin to shift and remarkably lowered the temperature coefficient of resonant frequency τ f down to near zero (∼0.56 ppm/°C) from 38 ppm/°C for the twinned precursor. The atomic scale STEM-HAADF and EDS results confirm the ordering of Zn in the Ta host at the nanometer scale in the shifted material featuring well-ordered Ba 8 ZnTa 6 O 24 slabs intergrown with Ba 3 ZnTa 2 O 9 and Ba 5 Ta 4 O 15 monolayers and anti-phase grain boundaries as planar defects. The pressure-induced twin-shift structural transformation of Ba 8 ZnTa 6 O 24 features the rare constant concentration of the hexagonal stacked layers, which is allowed by the vacancy ordering at the central layers of face-shared octahedral (FSO) trimers avoiding the FSO B-B repulsion, and remarkably the faster cationic ordering kinetics compared with the 2:1 ordered complex perovskites. Although the inclusion of numerous planar defects and the oxidizable atomic defects led to significant p-type conduction and inhomogeneous electrical microstructures, resulting in an extraordinarily high extrinsic dielectric loss for the high-pressure shifted Ba 8 ZnTa 6 O 24 pellet, the intrinsically near-zero τ f could make the shifted Ba 8 ZnTa 6 O 24 perovskite an ideal microwave dielectric resonator candidate if the defects could be eliminated.

high pressure↗
DOE OSTI2026

Understanding the Thermal Physics and Metallurgy of Metal Big Area Additive Manufacturing

The research goal of this EPSCoR-DOE partnership is to mitigate defects in parts made using a new type of additive manufacturing (AM) process called metal Big Area Additive Manufacturing (m-BAAM). To realize this goal, the PIs will detect and correct defects in the part as it is being printed by combining fundamental knowledge of the thermal physics and metallurgy of m-BAAM with in-process sensor data. Developed at the DOE-funded Manufacturing Demonstration Facility at Oak Ridge National Laboratory, the m-BAAM process involves one or more robots working together to produce a part by fusing metal wire layer-by-layer using arc welding. The process can print large metal parts such as turbine blades, which is not possible using other AM processes. In addition, m-BAAM production rates are more than ten times faster than other AM processes while requiring one-tenth of the material cost. Despite their potential to become a critical force multiplier in the energy generation industry, m-BAAM parts may fail to print accurately due to retention of heat and uneven cooling. Overheating and anomalous cooling rates in turn can cause inconsistencies in the microstructure, leading to sudden failure when used in safety-critical applications. In other words, flaw formation in m-BAAM parts is governed by the thermal history – intensity and spatial distribution of heat inside the part during printing. The thermal history is a complex function of the part shape and process settings such as welding energy, path taken by the welding torch for deposition (tool path), wire feed rate, among others.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Impacts of point defects on shallow doping in cubic boron arsenide: A first principles study

Cubic boron arsenide (BAs) stands out as a promising material for advanced electronics, thanks to its exceptional thermal conductivity and ambipolar mobility. However, effective control of p- and n-type doping in BAs poses a significant challenge, mostly as a result of the influence of defects. In the present study, we employed density functional theory (DFT) to explore the impacts of the common point defects and impurities on p-type doping of Be B and Si As , and on n-type doping of Si B and Se As . We found that the most favorable point defects formed by C, O, and Si are C As , O B O As , Si As , C As Si B , and O B Si As , which have formation energies of less than 1.5 eV. While the O impurity detrimentally affects both p- and n-type dopings, C and Si impurities are harmful for n-type dopings, making n-type doping a potential challenge. Interestingly, the antisite defect pair A s B B As benefits both p- and n-type doping. Finally, the doping limitation analysis presented in this study can potentially pave the way for strategic development in the area of BAs-based electronics.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Assessing Carrier Mobility, Dopability, and Defect Tolerance in the Chalcogenide Perovskite Ba Zr S 3

The chalcogenide perovskite Ba Zr S 3 has attracted much attention as a promising solar absorber for thin-film photovoltaics. Here we use first-principles calculations to evaluate its carrier transport and defect properties. We find that Ba Zr S 3 has a phonon-limited electron mobility of 37 cm 2 / V s, which is comparable to that in halide perovskites, but lower hole mobility of 11 cm 2 / V s. The defect computations indicate that Ba Zr S 3 is intrinsically n -type due to shallow sulfur vacancies, but that strong compensation by sulfur vacancies will prevent attempts to make it p -type. We also establish that Ba Zr S 3 shows some degree of defect tolerance, presenting only few low formation energy, deep intrinsic defects. Among the deep defects, sulfur interstitials are the dominant nonradiative recombination centers but exhibit a moderate capture coefficient. Our work highlights the material’s intrinsic limitations in carrier mobility and p -type doping, and suggests focusing on suppressing the formation of sulfur interstitials to achieve longer carrier lifetime. Published by the American Physical Society 2024

Yuan, Zhenkun (ORCID:0000000272005973)↗
DOE OSTI2024

Pyrochlore-type lanthanide titanates and zirconates: Synthesis, structural peculiarities, and properties

This contribution provides a thorough examination of the structural characteristics of pyrochlore-type lanthanide titanates and zirconates Ln2Ti2O7 and Ln2Zr2O7, across various length scales. This paper also examines their processing, interesting physical properties (electrical, magnetic, and thermal characteristics), and responses to high pressure and ion irradiation. Brief sections on the elemental oxides' crystal chemistry, pertinent phase diagrams, and energetics of defect formation are also provided. Pyrochlore-type Ln2Ti2O7 and Ln2Zr2O7 stand out as truly multifunctional materials. Moreover, they have emerged as fascinating materials due to magnetic geometrical frustration, arising from the ordering of magnetic Ln3+ and non-magnetic Ti4+ (or Zr4+) cations into separate, interpenetrating lattices of corner-sharing tetrahedra. This results in a diverse array of exotic magnetic ground states, such as spin-ice (e.g., Dy2Ti2O7 or Ho2Ti2O7) or quantum spin ice (e.g., Tb2Ti2O7), observed at both low and room temperatures. They also exhibit varied electrical and electrochemical characteristics. Some members such as Gd2Zr2O7, function as fast ion conductors with a conductivity (σ) of ≈10−2 S·cm−1 at 800 °C and activation energy (Ea) ranging from 0.85 to 1.52 eV, depending on the degree of structural disorder. Others, such as Gd2TiMoO7, are mixed ionic-electronic conductors with σ ≈ 25 S·cm−1 at 1000 °C, making them promising candidate materials for applications in energy conversion and storage devices and oxygen separation membranes. Their exceptionally low thermal conductivity (e.g., κ ∼ 1.1–1.7 W·m−1·K−1 between 700 and 1200 °C for Ln2Zr2O7), close to the glass-like lower limit of highly disordered solids, positions them as valuable materials for thermal barrier coatings. They can also effectively accommodate actinides (e.g., Pu, Np, Cm, Am) in solid solutions and sustain prolonged exposure to radiation due to alpha-decay events, while preserving the integrity of the periodic atomic structure. Proposed as major components in actinide-bearing ceramics, they contribute to the long-term immobilization and disposal of long-lived waste radionuclides from nuclear programs. Some of these properties are displayed simultaneously, opening avenues for new applications. Despite the wealth of data available in the literature, this review highlights the need for a better understanding of order/disorder processes in pyrochlore-type materials and the influence of the structural length scale on their physical and chemical properties. Recent experimental evidence has revealed that pyrochlore short-range structure is far more complex than originally thought. Moreover, pyrochlore local structure is now believed to include short-range, lower symmetry, ordered domains, such as the orthorhombic weberite-type of structure. Notably, short- and long-range structures appear decoupled across different length scales and temperature regimes, and these differences persist even in well-ordered samples. We believe that the pyrochlore structure offers a unique opportunity for examining the interplay between chemical composition, defect chemistry, and properties. In Memoriam: Rodney C. Ewing, Fondly Remembered.

Physics↗
DOE OSTI2024

Elucidating the Role of InGaAs and InAlAs Buffers on Carrier Dynamics of Tensile-Strained Ge Double Heterostructures

Extensive research efforts of strained germanium (Ge) are currently underway due to its unique properties, namely, (i) possibility of band gap and strain engineering to achieve a direct band gap, thus exhibiting superior radiative properties, and (ii) higher electron and hole mobilities than Si for upcoming technology nodes. Realizing lasing structures is vital to leveraging the benefits of tensile-strained Ge (ε-Ge). Here, we use a combination of different analytical tools to elucidate the effect of the underlying InGaAs/InAlAs and InGaAs overlaying heterostructures on the material quality and strain state of ε-Ge grown by molecular beam epitaxy. Using X-ray analysis, we show the constancy of tensile strain in sub-50 nm ε-Ge in a quantum-well (QW) heterostructure. Further, effective carrier lifetime using photoconductive decay as a function of buffer type exhibited a high (low) defect-limited carrier lifetime of ~68 ns (~13 ns) in 0.61% (0.66%) ε-Ge grown on an InGaAs (InAlAs) buffer. These results correspond well with the measured surface roughness of 1.289 nm (6.303 nm), consistent with the surface effect of the ε-Ge/III–V heterointerface. Furthermore, a reasonably high effective lifetime of ~78 ns is demonstrated in a QW of ~30 nm 1.6% ε-Ge, a moderate reduction from ~99 ns in uncapped ε-Ge, alluding to the surface effect of the overlying heterointerface. Thus, the above results highlight the prime quality of ε-Ge that can be achieved via III–V heteroepitaxy and paves a path for integrated Ge photonics.

36 MATERIALS SCIENCE↗