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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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69 records · Page 4
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

A Many-Body Perturbation Theory Approach to Energy Band Alignment at the Crystalline Tetracene–Silicon Interface

Hybrid inorganic–organic semiconductor (HIOS) interfaces are of interest for new photovoltaic devices operating above the Shockley–Queisser limit. Predicting energy band alignment at the interfaces is crucial for their design, but represents a challenging problem due to the large scales of the system, the energy precision required and a wide range of physical phenomena that occur at the interface. To tackle this problem, many-body perturbation theory in the non-self-consistent GW approximation, orbital relaxation corrections for organic semiconductors, and line-up potential method for inorganic semiconductors which allows for tractable and accurate computing of energy band alignment in crystalline van-der-Waals hybrid inorganic–organic semiconductor interfaces are used. In this work, crystalline tetracene physisorbed on the clean hydrogen-passivated 1 × 2 reconstructed (100) silicon surface is studied. Using this computational approach, it is found that the energy band alignment is determined by an interplay of the mutual dynamic dielectric screening of two materials and the formation of a dipole layer due to a weak hybridization of atomic/molecular orbitals at the interface. The significant role of the exchange-correlation effects in predicting band offsets for the hybrid inorganic–organic semiconductor interfaces is also emphasized.

74 ATOMIC AND MOLECULAR PHYSICS↗
DOE OSTI2021

Electric-Drive Vehicle Power Electronics Thermal Management: Current Status, Challenges, and Future Directions

Effective thermal management of traction-drive power electronics is critical to the advancement of electric-drive vehicles and is necessary for increasing power density and improving reliability. Replacing traditional silicon devices with more efficient, higher temperature, higher voltage, and higher frequency wide-bandgap (WBG) devices will enable increased power density but will result in higher device heat fluxes. Compact packaging of high-temperature WBG devices near low-temperature-rated components creates thermal management challenges that need to be addressed for future power-dense systems. This paper summarizes the thermal performance of on-road automotive power electronics thermal management systems and provides thermal performance and pumping-power metrics for select vehicles. Thermal analyses reveal that the package/conduction resistance dominates the total thermal resistance (for existing automotive systems). We model advanced packaging concepts and compare the results with existing packaging designs to quantify their thermal performance enhancements. Double-side-cooled configurations that do not use thermal interface materials are package concepts predicted to provide a low junction-to-fluid thermal resistance (compared to current packages). Dielectric-fluid-cooled concepts enable a redesign of the package to reduce the package resistance, can be implemented in single- and two-phase cooling approaches, and allow for cooling of passive components (e.g., capacitors) and bus bars.

33 ADVANCED PROPULSION SYSTEMS↗
DOE OSTI2026

Degradation Mode Identification by Photocarrier Lifetime Spectroscopy on Devices and Test Structures

In this presentation, I examine the basic concepts of the device physics that can be used to distinguish various degradation and recovery modes on a cell level. The known degradation modes (bulk LeTID and LID, UVID, etc.) are due to defects and impurities that cause the photocarrier recombination according to Shockley-Reed-Hall (SRH) statistics. The SRH recombination rate strongly depends on the balance of electron and hole capture rates into the defects, which in turn, are governed by their local concentrations. The strongest recombination takes place at approximately equal concentrations of electrons and holes, while at low injection conditions (when one type of carrier dominates) the SRH recombination is suppressed. For cell degradation modes that affect the passivated interface (UVID, H-induced TOPCon contact degradation) the defects are at the interface under low-injection conditions due to either high local doping or the adjacent built-in charge in the dielectric. This mode is characterized by changes in the "diode prefactor" J01 slope in the inverse lifetime-injection level curve. In contrast, bulk degradation (LeTID, LID) affects bulk lifetime, with J01 slope unchanged. Carrier lifetime - injection level plots therefore serve as clear indicators of different degradation modes and are shown by experimental examples.

14 SOLAR ENERGY↗
DOE OSTI2026

Enhancing mobility and interface state engineering via UV-ozone treatment in BEOL-compatible ultrathin TiO 2 transistors

It has emerged as a potential candidate to improve the performance of monolithic-three-dimensional (M3D) integration of fused logic and memories through low-temperature in situ synthesis of high-performance metal–oxide–semiconductor (MOS) transistors. Here, we report the demonstration of the BEOL-compatible low thermal budget (350 °C) fabrication process of ultrathin-TiO2 transistors by the combination of RTA and UV-ozone treatment (RTA-UVOz). UV–ozone (UVOz) treatment of TiO2 anatase films significantly enhances stability, boosting ION current and field effect mobility (μ FE ) by two times of magnitude in TiO2 TFTs. UV ozone treatment helps to eliminate pre-existing oxygen vacancies and carbon contamination on TiO2 channels even at low temperature (100 °C), resulting in high-quality channel/dielectric interfaces with low interface states (D it ). During UVOz treatment, oxygen species (O x ) passivate the oxygen vacancies ($V$$^{2+}_{o}$), and hence low concentration of $V$$^{2+}_{o}$ would be left for ionization/de-ionization under PBS/NBS, leading to improved bias stress stability. Furthermore, the TiO 2 TFTs with thin ZrO 2 gate dielectric exhibited excellent performance including a lower subthreshold swing (SS) of 98 mV/dec with high drive I ON current ∼ 4.5 μA/μm, a high I ON /I OFF > 10 9 , and mobility μFE of 7 cm 2 /V-s under a battery powered voltage of 1 V. UV–ozone treatment enables high-performance, CMOS-compatible TiO 2 transistors with a low thermal budget, ideal for next-generation flexible, energy-efficient electronics.

BEOL↗
DOE OSTI2026

Buried Interfaces in Organic Photocathodes for H 2 Evolution: Fermi-Level Pinning and Recombination

Herein, we demonstrate how Fermi-level pinning at buried contacts impacts solar fuel generation in all-polymer photocathodes by systematically comparing the effects of work function, hydroxyl coverage, and hydrogen evolution using chemically modified indium tin oxide (ITO) supports. Photovoltages and net photocathode performance are improved when the ITO is passivated using phosphonic acids, independent of work function, suggesting that the passivation reduces Fermi-level pinning at the buried interface arising from blended heterojunction interactions with surface metal hydroxyls. Transient photovoltage decay reveals differences in recombination mechanisms, supported by light intensity-dependent measurements. Briefly, nonpassivated, hydrophilic contacts exhibit trap-assisted recombination, while passivated, hydrophobic contacts follow bimolecular recombination. We then investigate changes in electroactivity of hole-transfer processes as a function of scan rate and repetitive cycling using a diffusion-controlled molecular redox probe, analogous to a hole-only device achieved via the electrolyte. The nonpassivated buried contacts exhibit higher overpotentials for oxidation, indicative of hole injection/extraction barriers. We observe irreversible electron transfer via the hole-transport level of the blended heterojunction and a strong cycle dependence, consistent with changes in the hole trap state density. Passivation results in more reversible redox behaviors, consistent with more Ohmic-like contacts. Collectively, these results provide context toward the realization of durable organic photoelectrodes with optimized photovoltages and net solar-to-hydrogen conversion efficiencies via fundamental understanding of the rates of carrier generation, recombination, and transport in high-dielectric aqueous environments and opportunities to characterize buried interfaces under device-relevant electric fields.

buried interfaces↗
DOE OSTI2021

Outdoor performance of a tandem InGaP/Si photovoltaic luminescent solar concentrator

Here, we report the design, fabrication and outdoor characterization of a tandem luminescent solar concentrator/Si multi-junction photovoltaic module. Our tandem LSC/Si device consists of an InGaP LSC functioning as a top cell and a passivated contact Si bottom cell. The LSC comprises of an InGaP microcell array coupled to a polymer waveguide, loaded with CdSe/CdS core-shell quantum dot luminophores. The light trapping efficiency of the LSC waveguide is enhanced by encapsulation with photoluminescence trapping mirrors consisting of dielectric multilayer thin films. We demonstrate the performance of the LSC/Si device through a series of outdoor tests under various irradiance conditions conducted at the National Renewable Energy Laboratory. We report the first outdoor testing data of an LSC/Si tandem module, displaying maintained performance across varied diffusivity conditions for the LSC component. Finally, we model the tandem module performance using a ray optic simulation-based multiphysics model and forecast a pathway for high efficiency tandem LSC/Si module performance.

14 SOLAR ENERGY↗
DOE OSTI2023

Aerosol-Jet Printed Sensors for Environmental, Safety, and Health Monitoring: A Review

An emergent direct-write approach, aerosol-jet printing (AJP), is gaining attention for the deployment of rapid and affordable microadditively manufactured energy-efficient sensors and printed electronics. AJP enables a broad range of ink viscosities (0.001–1 Pa s) for printing diverse materials ranging from ceramics and metals to polymers and biological matter. Reproducible, high-spatial-resolution features (≈10 µm), and wide standoff distances (1–11 mm) between the nozzle and the substrate facilitate conformal printing of complex geometrical designs on nonplanar—e.g., stepped or curved—surfaces. Here this paper aims to provide a comprehensive overview of state-of-the-art AJP-based sensors (e.g., strain and temperature gauges, biosensors, photosensors, humidity and surface acoustic wave sensors, dielectric elastomer actuators, and motion, smoke, and hazardous gas detectors) and to discuss prospective applications. The drive toward cost-effective devices that are smaller, lighter, and better-performing remains a frontier challenge in the field of printed electronics. Consequently, as AJP becomes increasingly utilized in the high-volume manufacturing of miniaturized active and passive sensors, it opens a pathway for facile large-scale fabrication of devices for a wide range of consumer and industrial applications, including transportation, agriculture, infrastructure, aerospace, national defense, and healthcare.

3-dimensional↗
DOE OSTI2024

Mitigating coherent loss in superconducting circuits using molecular self-assembled monolayers

In planar superconducting circuits, decoherence due to materials imperfections, especially two-level-system (TLS) defects at different interfaces, is a primary hurdle for advancing quantum computing and sensing applications. Traditional methods for mitigating TLS loss, such as etching oxide layers at metal and substrate interfaces, have proven to be inadequate due to the persistent challenge of oxide regrowth. In this work, we introduce a novel approach that employs molecular self-assembled monolayers (SAMs) to chemically bind at different interfaces of superconducting circuits. This technique is specifically tested here on coplanar waveguide (CPW) resonators, in which this method not only impedes oxide regrowth after surface etching but can also tailors the dielectric properties at different resonators interfaces. The deployment of SAMs results in a consistent improvement in the measured quality factors across multiple resonators, surpassing those with only oxide-etched resonators. The efficiency of our approach is supported by microwave measurements of multiple devices conducted at millikelvin temperatures and correlated with detailed X-ray photoelectron spectroscopy (XPS) and transmission electron microscopy (TEM) characterizations of SAM-passivated resonators. The compatibility of SAMs materials with the established fabrication techniques offers a promising route to improve the performance of superconducting quantum devices.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2025

Temperature and Strain Sensing Characteristics of a 128° YX-Cut LiNbO 3 Rayleigh-Mode SAW Sensor From Room to Cryogenic Temperatures

Accurate, passive, and wireless monitoring of cryogenic hardware is essential for high-energy physics, space propulsion, and biomedical instrumentation. Here, this study quantifies the coupled temperature-strain behavior of Rayleigh-mode surface acoustic-wave (SAW) delay-line sensors fabricated on 128° YX-cut LiNbO 3 . A nonlinear finite element (FE) model incorporating Varshni-based elastic constants, higher-order thermal expansion, and temperature-dependent piezo- and dielectric coefficients was developed and validated experimentally between 280K and 80K. Free-standing (first test condition) and bonded/wired (second test condition) devices exhibited indistinguishable thermal responses; the average temperature coefficient of delay (TCD) in the critical cryogenic range from 130K down to 80K differed by only 0.15 ppm/K (0.32%), confirming that bonding-induced stress is negligible. Over 280-80K the measured TCD was 61.77 ppm/K, while the FE model predicted an equivalent temperature coefficient of frequency (TCF) of −62.74 ppm/K with an overall coefficient of determination R2 = 0.998. In the critical cryogenic interval 130-80K the TCD fell to 47.66 ppm/K, indicating improved thermal stability at low temperature. Controlled loading (0-300 με) revealed a strain coefficient of delay (SCD) that rises from 0.53 ± 0.02 ppm/με at 300K to 1.05 ± 0.02 ppm/με at 80K. This modest sensitivity confirms that, for temperature sensing, strain is a second-order perturbation above 135K but must be compensated at deeper cryogenic levels. Overall, this work establishes a predictive multiphysics model together with repeatable wired measurements that confirm the suitability of SAW sensors for temperature and strain monitoring in extreme cryogenic environments, while also providing a baseline for future wireless implementations.

25 ENERGY STORAGE↗
DOE OSTI2022

Development of self-sensing materials for extreme environments based on metamaterial concept and additive manufacturing

Structural health monitoring of an engineered component in a harsh environment is critical for multiple DOE missions including nuclear fuel cycle, subsurface energy production/storage, and energy conversion. Supported by a seeding Laboratory Directed Research & Development (LDRD) project, we have explored a new concept for structural health monitoring by introducing a self-sensing capability into structural components. The concept is based on two recent technological advances: metamaterials and additive manufacturing. A self-sensing capability can be engineered by embedding a metastructure, for example, a sheet of electromagnetic resonators, either metallic or dielectric, into a material component. This embedment can now be realized using 3-D printing. The precise geometry of the embedded metastructure determines how the material interacts with an incident electromagnetic wave. Any change in the structure of the material (e.g., straining, degradation, etc.) would inevitably perturbate the embedded metastructures or metasurface array and therefore alter the electromagnetic response of the material, thus resulting in a frequency shift of a reflection spectrum that can be detected passively and remotely. This new sensing approach eliminates complicated environmental shielding, in-situ power supply, and wire routing that are generally required by the existing active-circuit-based sensors. The work documented in this report has preliminarily demonstrated the feasibility of the proposed concept. The work has established the needed simulation tools and experimental capabilities for future studies.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Technology Strategy Assessment: Findings from Storage Innovations 2030 Supercapacitors

Electrochemical capacitors, which are commercially called supercapacitors or ultracapacitors, are a family of energy storage devices with remarkably high specific power compared with other electrochemical storage devices. Supercapacitors do not require a solid dielectric layer between the two electrodes, instead they store energy by accumulating electric charge on porous electrodes filled with an electrolyte solution and separated by an insulating porous membrane. Supercapacitors offer large specific capacitance and high power output. They can be charged and discharged very quickly, offer excellent cycle life and long operational life, and operate over a broad temperature range. The major drawbacks of supercapacitors are low energy density and a high self-discharge rate. For example, a supercapacitor passively discharges from 100% to 50% in a month compared with only 5% for a lithium-ion battery [1]. The high capital cost and low energy density of supercapacitors make the unit cost of energy stored ($/kWh) more expensive than alternatives such as batteries. Their attributes make them attractive for uses in which frequent small charges/discharges are required (e.g., ensuring power quality or providing frequency regulation). Their attributes and cost make them less attractive for long-duration energy storage, which favors technologies with low self-discharge that cost less per unit of energy stored.

25 ENERGY STORAGE↗
DOE OSTI2022

Experimental and analytical study of the hydrodynamic and single and two-phase convective heat transfer performance of flexible PDMS microchannels with micropillar arrays

Various copper and silicon based thermal management systems are used in the cooling of electronics. However, the rigid nature of these materials along with their high thermal and electrical conductivity pose a difficulty in developing direct contact embedded flexible cooling systems that can offer robust cooling performance. The low density, thermal stability, chemical inertness, and electrical insulation of Polydimethylsiloxane (PDMS) make it an ideal material to develop lightweight direct contact thermal management systems for electronics. Its ease of fabrication with tunable flexibility provides the opportunity to go beyond traditional electronics and develop advanced active and passive thermal management systems for a wide–range of applications in foldable and wearable electronics, liquid cooling garments, microgravity, and electric motors. In this study, a flexible PDMS based microchannel with micropillar arrays, which enhance the thermal performance of the device through capillary-assisted flow, has been developed. The hydrodynamic and convection heat transfer performance of three PDMS wick pillar geometries, ranging from a porosity of 0.8–0.91, are investigated and compared under single-phase and two-phase conditions. Dielectric coolant FC-3283 is employed and permeability measurements are made for mass fluxes ranging from 53 kg/m 2 s to 369 kg/m 2 s. Given its conformability, the device demonstrates a deviation from Darcy’s Law, within the laminar regime, with an increasing permeability with mass flux at the rate of ~0.5–0.8 Darcy/(kg/m 2 s). A semi-analytical model has been developed and reported to quantify the conformability of the device. The heat transfer performance is experimentally evaluated using the same dielectric fluid for mass flux ranging from 105 kg/m 2 s to 420 kg/m 2 s with heat fluxes ranging from 1.5 W/cm 2 to 16 W/cm 2 . Heat transfer coefficients of up to 7000 W/m 2 K are observed, which are comparable to copper and silicon microchannels. The effect of porosity on the single phase thermal performance has been evaluated against the pumping power to provide a basis for thermal management system design. Finally, high-speed imaging is performed to study the two-phase flow characteristics to provide insight into the vapor formation and removal.

42 ENGINEERING↗
DOE OSTI2022

Passive radiative thermostat

A passive radiative thermostat (PRT) is provided. The PRT comprises a phase-change part comprising a thermochromic phase change material; and a wavelength-selector part designed to create electromagnetic resonances in a wavelength range. The wavelength range may include the visible range, the near-infrared range, or the mid-infrared range. The wavelength-selector part may include an electromagnetic cavity resonator or an electromagnetic plasmonic resonator. Further, the phase-change part may include a thermochromic film; and the wavelength-selector part may include a dielectric spacer.

de Melo Kort-Kamp, Wilton Junior↗
DOE OSTI2022

Nitrogen plasma passivated niobium resonators for superconducting quantum circuits

Microwave loss in niobium metallic structures used for superconducting quantum circuits is limited by a native surface oxide layer formed over a timescale of minutes when exposed to an ambient environment. Here, in this work, we show that nitrogen plasma treatment forms a niobium nitride layer at the metal–air interface, which prevents such oxidation. X-ray photoelectron spectroscopy confirms the doping of nitrogen more than 5 nm into the surface and a suppressed oxygen presence. This passivation remains stable after aging for 15 days in an ambient environment. Cryogenic microwave characterization shows an average filling-factor-adjusted two-level-system loss tangent Fδ TLS of (2.9±0.5)·10 –7 for resonators with a 3 μm center strip and (1.0±0.3)·10 –7 for a 20 μm center strip, exceeding the performance of unpassivated samples by a factor of four.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2020

Intrinsic thermal interfacial resistance measurement in bonded metal–polymer foils

Heat conduction through bonded metal–polymer interfaces often limits the overall heat transfer in electronic packaging, batteries, and heat recovery systems. To design the thermal circuit in such systems, it is essential to measure the thermal interfacial resistance (TIR) across ~1 µm to 100 µm junctions. Previously reported TIR of metal–polymer junctions utilize ASTM E1530-based two-block systems that measure the TIR by applying pressure across the interface through external heating and cooling blocks. Here, we report a novel modification of the ASTM-E1530 technique that employs integrated heaters and sensors to provide an intrinsic TIR measurement of an adhesively bonded metal–polymer junction. We design the measurement technique using finite element simulations to either passively suppress or actively compensate the lateral heat diffusion through the polymer, which can minimize the systematic error to ≲5%. Through proof-of-concept experiments, we report the TIR of metal–polymer interfaces made from DuPont’s Pyralux double-side copper-clad laminates, commonly used in flexible printed circuit boards. Our TIR measurement errors are <10%. We highlight additional sources of errors due to non-idealities in the experiment and discuss possible ways to overcome them. Our measurement technique is also applicable to interfaces that are electrically insulating such as adhesively joined metal–metal junctions and sputter-coated or welded metal–polymer junctions. Altogether, the technique is capable of measuring TIR ≳10 –5 m 2 KW –1 in bonded metal–polymer foils and can be tailored for in situ measurements in flexible electronics, circuit packaging, and other hybrid metal–polymer systems.

47 OTHER INSTRUMENTATION↗