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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 73 records · Page 4
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

Deuterium retention in MeV ion-irradiated beryllium

Beryllium, as the material of choice for the ITER first wall, will be subject to high energy neutrons during the operation of the fusion device. Such irradiation will create displacement damage in the crystal lattice, which is known to influence hydrogen isotope retention, e.g. in iron and tungsten. Here in our study, we irradiated beryllium samples with high-energy oxygen ions up to various dpa levels (0.01 dpa, 0.1 dpa, and 1 dpa) and subsequently exposed the samples to deuterium plasma at 370 K and 573 K. The amount of retained deuterium was measured by thermal desorption spectroscopy and nuclear reaction analysis and was found to decrease by about 18% in the samples damaged up to 0.1 dpa compared to the undamaged ones. Further damaging up to 1 dpa did not show any additional effects on deuterium retention. Transmission electron microscopy was used to check for the existence of bubbles after plasma exposure.

36 MATERIALS SCIENCE↗
DOE OSTI2025

The interaction of edge dislocations with hydrogen-helium bubbles in tungsten

In fusion reactors, plasmas-facing components undergo degradation due to displacement damage and injection of gas impurities. Significant amounts of hydrogen (H) and helium (He) impurities can be introduced into materials through plasma exposure and nuclear transmutation, and their synergistic effects lead to the formation of mixed He/H bubbles under irradiation, changing their hardening mechanisms. In this study, molecular dynamics (MD) models were developed to study the interaction between ½<111> edge dislocations with mixed He/H-bubbles in W. The critical resolved shear stress (CRSS) that is required for dislocation breakaway increases with He/H-to-vacancy ratio at 600 K, indicating strong pinning effects of mixed He/H bubbles. However, as the temperature increases up to 1400 K, the mixed He/H bubbles become unstable as the H atoms are increasingly emitted from the mixed He/H bubbles and migrate into W matrix, which lowers bubble pressure and CRSS. Overall, these results highlight the synergistic effects of He and H on dislocation behavior in irradiated W during deformation.

36 - MATERIALS SCIENCE↗
DOE OSTI2021

Defect annihilation in heavy ion irradiated polycrystalline gold

In this study, we explore the interaction of electron wind force (EWF) with defects originating from ion irradiation in-situ inside a transmission electron microscope. Nanocrystalline gold specimens were self-ion irradiated to a dose of 5 × 10 15 ions/cm 2 (45 displacement per atom) to generate a high density of displacement damage. We also developed a molecular dynamics simulation model to understand the associated atomic scale mechanisms. Both experiments and simulations show that the EWF can impart significant defect mobility even at low temperatures, resulting in the migration and elimination of defects in a few minutes. Overall, we propose that the EWF interacts with defects to create highly glissile Shockley partial dislocations, which makes the fast and low temperature defect annihilation possible.

36 MATERIALS SCIENCE↗
DOE OSTI2022

The effects of high energy deuteron ion beam irradiation on the tensile behavior of HT-9

Ion beam implantations are widely performed to understand the effects of irradiation-induced displacement damage on nuclear structural materials. However, the volume of material that can be investigated is often limited by the maximum energies of accelerator facilitates, leading to a limitation in the thickness of samples whose mechanical properties can be evaluated. The Lawrence Berkeley National Laboratory’s 88-Inch Cyclotron offers a wide range of ions and energies, allowing for material ion implantations at larger scales than typical. Four HT-9 SS-J-geometry tensile specimens were polished and then irradiated with deuterons at the 88-Inch Cyclotron to doses of approximately 0.2 dpa prior to small scale tensile testing. Here, the results from this study show irradiation hardening characterized by the tensile test results and black dot irradiation defects. Additionally, a comprehensive look at low temperature irradiations of high-Cr F/M steels is presented and our results show agreement with the available data.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Irradiation effects in tungsten—From surface effects to bulk mechanical properties

Advanced materials such as tungsten fibre-reinforced composites allow to overcome severe weaknesses of the baseline materials for plasma-facing components — copper and tungsten. The effect of the fusion environment on the mechanical properties of these materials, e.g. the embrittlement by neutron irradiation, plays a key role for the development of future fusion reactors. To simulate this effect, high-energy ions are used as a substitute for the displacement damage by neutrons. We propose the use of very fine tungsten wire as a possibility of studying the influence of irradiation damage on the mechanical properties. This is possible as they allow full-depth irradiation of almost the entire volume despite the limited penetration depth of ions. Geometrical size effects are mitigated due to the nanoscale microstructure of the wire. In addition, similar wire is used in tungsten fibre-reinforced composites. Thus, the investigation of irradiated wire can directly be used for the prediction of the bulk composite properties. For the proof of this concept tungsten wire with a diameter of 16 μm was electrochemically thinned to 5 μm and irradiated with 20.5 MeV W 6+ ions. The mechanical properties were subsequently determined by macroscopic tensile testing. Irradiation to 0.3, 1 and 9 dpa did not lead to a change of the mechanical behaviour. Both strength and ductility, the latter indicated by the reduction of area, were similar to the as-fabricated state.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Inferring relative dose-dependent color center populations in proton irradiated thoria single crystals using optical spectroscopy

In this work, we have utilized photoluminescence spectroscopy and optical ellipsometry to characterize the dose-dependence of the photoluminescence emission intensity and changes in optical absorption of thoria single crystals subject to irradiation with energetic protons at room- and elevated-temperatures. The photoluminescence peaks and the optical absorption bands are attributed to creation of new electronic states emerging from defects resulting from displacement damage. These bands are most likely associated with electrons trapped at the oxygen vacancy sites similar to color centers formed in other irradiated oxides and halides. Our experimental observations are supported by a standard density functional theory calculation of the electronic structure in pristine and oxygen vacancy-bearing thoria crystals. The dose-dependence of the intensity of the photoluminescence peaks is used to parameterize a rate theory model that estimates the concentration of color centers in the irradiated crystals. This parameterization provides optimized migration barrier parameters for oxygen interstitials and vacancies that simultaneously capture the optical response of the crystals irradiated at room- and elevated-temperature. These optical spectroscopy techniques offer a promising pathway to characterize the population of color centers formed at the sites of oxygen anion vacancies, particularly in irradiated nuclear fuels, where atomic-level defects cannot be readily imaged using electron microscopy. When combined with other direct and indirect characterization tools, our approach can provide new insight into defect formation and accumulation in energy materials over single atomic to extended length scales.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Utility of Shockley–Read–Hall analysis to extract defect properties from semiconductor minority carrier lifetime data

The semiconductor minority carrier lifetime contains information about several important material properties, including Shockley–Read–Hall defect levels/concentrations and radiative/Auger recombination rates, and the complex relationships between these parameters produce a non-trivial temperature-dependence of the measured lifetime. It is tempting to fit temperature-dependent lifetime data to extract the properties of the Shockley–Read–Hall recombination centers; however, without a priori knowledge of the distribution of the Shockley–Read–Hall states across the bandgap, this fit problem is under-constrained in most circumstances. Shockley–Read–Hall lifetime data are not well-suited for the extraction of Shockley–Read–Hall defect levels but can be used effectively to extract minority carrier recombination lifetimes. The minority carrier recombination lifetime is observed at temperatures below 100 K in a Si-doped n-type InGaAs/InAsSb superlattice, and deviation from its expected temperature-dependence indicates that the capture cross section of the defect associated with Si-doping has an activation energy of 1.5 meV or a characteristic temperature of 17 K. This lower temperature regime is also preferrable for the analysis of the physics of defect introduction with displacement-damage-generating particle irradiation.

Physics↗
DOE OSTI2023

Nanoscale imaging of He-ion irradiation effects on amorphous TaO x toward electroforming-free neuromorphic functions

Resistive switching in thin films has been widely studied in a broad range of materials. Yet, the mechanisms behind electroresistive switching have been persistently difficult to decipher and control, in part due to their non-equilibrium nature. Here, we demonstrate new experimental approaches that can probe resistive switching phenomena, utilizing amorphous TaO x as a model material system. Specifically, we applied scanning microwave impedance microscopy and cathodoluminescence (CL) microscopy as direct probes of conductance and electronic structure, respectively. These methods provide direct evidence of the electronic state of TaO x despite its amorphous nature. For example, CL identifies characteristic impurity levels in TaO x , in agreement with first principles calculations. We applied these methods to investigate He-ion-beam irradiation as a path to activate conductivity of materials and enable electroforming-free control over resistive switching. However, we find that even though He-ions begin to modify the nature of bonds even at the lowest doses, the films' conductive properties exhibit remarkable stability with large displacement damage and they are driven to metallic states only at the limit of structural decomposition. Finally, we show that electroforming in a nanoscale junction can be carried out with a dissipated power of <20 nW, a much smaller value compared to earlier studies and one that minimizes irreversible structural modifications of the films. Importantly, the multimodal approach described here provides a new framework toward the theory/experiment guided design and optimization of electroresistive materials.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Radiation-resilient InAs quantum dot lasers

Displacement damage from particle radiation increases the threshold current of semiconductor lasers, impeding the deployment of photonic systems in harsh radiation environments. Replacing conventional quantum well (QW) gain regions with quantum dots (QDs) has been shown to suppress the radiation-induced increase in threshold current owing to three-dimensional carrier confinement, which effectively segregates charge carriers away from radiation-induced defects. However, radiation-induced change in threshold current is also affected by extrinsic design elements of a laser, such as photon lifetime, and therefore provides only a partial assessment of the radiation hardness. In this work, we advance the understanding of the radiation resiliency of InAs QD lasers by extracting the change in the nonradiative recombination rate after radiation exposure, which provides a more fundamental assessment of the intrinsic radiation hardness of InAs QD gain regions. We find that carriers that populate InAs QD states have a nonradiative recombination rate that is over an order-of-magnitude less sensitive to neutron radiation relative to carriers in InGaAsP QWs. InAs QD lasers must be designed such that carriers primarily occupy QD states, preventing carrier spillover into surrounding barrier layers to obtain the maximum benefit. Furthermore, we show that enhanced radiation hardness is observed in InAs QD lasers grown on both highly lattice-mismatched silicon substrates and native GaAs substrates, further broadening the appeal of InAs QD lasers as reliable light sources for photonic systems operating in harsh radiation environments.

47 OTHER INSTRUMENTATION↗
DOE OSTI2025

Proton radiation resilience of CdSeTe photovoltaics: High predicted end-of-life performance for space applications

Two types of cadmium selenide telluride (CdSeTe) photovoltaic devices have been exposed to high-energy (150–1500 keV) protons with fluences ranging from 1 × 10 11 to 9 × 10 13 cm −2 . Pre- and post-irradiation current density vs voltage characteristic data were collected and analyzed. Arsenic-doped CdSeTe devices retained 80% of the power conversion efficiency (PCE) relative to control devices after exposure to 10 12 cm −2 650 keV protons, while copper-doped CdSeTe devices retained about 95% of the control PCE under the same irradiation condition. Displacement damage dose analysis coupled with simulations for duration-dependent performance in a medium Earth orbit space mission revealed superior PCE remaining factors, indicating greater resilience to proton bombardment than state-of-the-art multijunction III-V based space photovoltaic technologies.

CdTe solar cells↗
DOE OSTI2026

Comparison of time-resolved photoluminescence and deep-level transient spectroscopy defect evaluations in an InAs nBn detector subjected to in situ and ex situ 63 MeV proton irradiation

Deep-level transient spectroscopy and temperature-dependent time-resolved photoluminescence experiments are performed on identical InAs nBn photodetector structures as a function of in situ and ex situ 63 MeV proton irradiation to assess their generation and recombination dynamics. Pre-irradiation, the n-type InAs absorbing region, exhibits a steadily increasing minority carrier lifetime with increasing temperature, providing evidence that excited minority carriers may be recombining via shallow defect levels. From deep-level transient spectroscopy, two features are found between 10 and 275 K: a low temperature broad “shoulder,” which suggests emission from multiple shallow electron defect levels with energies <29 meV and a high temperature minimum occurring at ∼230 K with an activation energy of 539 meV, which suggests a defect in the barrier layer in the device. Two similar nBn detectors are then subjected to 63 MeV proton irradiation in step doses and measured between steps. One experiment is performed in situ with an nBn held at ∼10 K during dosing, and the other experiment is performed ex situ with a similar nBn held at room temperature for dosing. The ex situ dosing results in an evaluation of the defect introduction rate that is three to four times lower than in situ due to partial annealing of the proton-induced displacement damage at room temperature. The results of these two experiments are then compared with the dose-dependent recombination rate analysis, resulting in an estimated recombination defect cross section of 1.6 × 10 −13 cm 2 for the shallow shoulder defect.

Carrasco, Rigo A. [Air Force Research Laboratory (↗
DOE OSTI2024

Comprehensive new insights on the potential use of SiC as plasma-facing materials in future fusion reactors

Abstract The performance of silicon carbide as an alternative plasma facing material (PFM) was studied at various irradiation conditions relevant to ion energies and fluxes of a fusion reactor. This analysis involves detailed modeling of subsurface plasma/material interactions, sputtered particle transport above the surface and redeposition, and related changes in material composition and microstructure induced by steady-state and Edge Localized Mode ion fluxes. Transition of a crystalline SiC surface to semi-crystalline and amorphous phases was analyzed based on advanced modeling of DIII-D tokamak experiments where SiC was irradiated in single- and multiple- L-mode and H-mode discharges. This analysis shows that displacement damage, particle deposition/redeposition, and D accumulation on the SiC divertor surface can lead to significant microstructural changes that result in enhanced sputtering erosion in comparison with the original crystalline material. However, the resulting total net erosion rate for a full-coverage, advanced tokamak, SiC coated divertor may well be acceptably low. Moreover, the C sputtering yield from the evolved SiC surface can be seven times lower than from a pure graphite surface; this would imply significantly reduced tritium co-deposition rates in a D-T tokamak reactor, compared with a pure carbon surface. It was also determined that chemical sputtering of both C and Si should not result in any noticeable effect on the net erosion, for attached plasma regimes. Our results thus show encouraging results overall for use of SiC as a PFM in tokamaks.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2025

Amorphization and siliconization of silicon carbide as a first wall material

The understanding and prediction of silicon carbide (SiC) material evolution exposed to SOL plasma conditions is of prime interest because SiC represents a promising main chamber wall plasma-facing material for next-step fusion devices (low hydrogenic diffusion, good mechanical and thermal properties under neutron irradiation). Gross and net Si erosion rates from SiC surfaces in contact with a well-diagnosed L-mode plasma in the DIII-D tokamak have been simulated and the surface concentrations of impurities have been tracked as a function of time. Coupled simulation of surface model and impurity transport demonstrates amorphization of crystalline SiC exposed to L-mode plasma due to the accumulation of displacement damages under ion irradiation. This affects the lifetime of SiC plasma facing components. Surface evolution is tightly coupled to impurity transport in the plasma and therefore needs to be integrated with impurity transport simulations to effectively predict Si erosion rates and sub-surface concentrations as a function of time. The simulation workflow couples a semi-analytical surface model to the impurity transport code GITR. The surface model is a homogeneous mixed-material model that tracks physical & chemical sputtering and reflection of impurities. Gross erosion is primarily influenced by the background plasma parameters and redeposition patterns are mainly influenced by the prompt redeposition due to the gyro-orbits of impurity ions. Although crystalline form of SiC is preferable for fusion wall applications because of resistance to neutron irradiation, this work indicates that crystalline SiC will undergo amorphization under D plasma contact with implications of higher sputtering and fuel retention. These results direct us to explore the effects of amorphization on crystalline SiC and further the physics basis of SiC usage as first wall material for fusion environments.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2021

Radiation-Induced Dark Counts for Silicon Single-Photon Detectors in Space

Single-photon detectors operating on satellites for use in a quantum communications network can incur large dark-count-rate increases from the natural radiation environment of space. Displacement damage to the material lattice of a detector from the ionizing radiation can result in a permanent dark-count increase in the detector. In this work, we analyze the radiation-induced dark-count rate of a silicon single-photon avalanche diode onboard a satellite at different orbiting altitudes, as well as, the additional radiation from a nuclear-disturbed environment caused by a high-altitude nuclear explosion. For detectors on low Earth orbit satellites, protons are the biggest source of radiation damage and are best mitigated by choosing an orbit that minimizes exposure when passing through the South Atlantic Anomaly and Polar Cusps. Detectors on medium Earth orbit and geostationary orbit satellites, if shielded by more than 10 mm of aluminum, provide the best platform in terms of the least amount of radiation damage to the detectors. In the event of a high-altitude nuclear explosion, the artificial radiation belts produced by the explosion will cause too much damage to silicon single-photon detectors on low Earth orbit satellites and render them unfit for quantum communications in less than a day. Higher orbit satellites will only suffer minor dark-count-rate increases from the artificial radiation belts.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2025

Multiscale Explanation of the Missing Gallium Vacancy in Gallium Arsenide

Irradiation of gallium arsenide (GaAs) produces immobile vacancies and mobile interstitials. Yet, after decades of experimental investigation, the immobile Ga vacancy continues to evade detection, raising the question: where is the Ga vacancy? Static first-principles calculations predict a Ga vacancy should be readily observed. We find that short-time dynamical evolution of primary defects is the key to explaining this conundrum. Using a dynamical multiscale atomistically informed device engineering (AIDE) method, we discover that during the initial displacement damage, the Ga vacancy (3-/2-) defect level pins the Fermi level near the midgap, producing oppositely charged vacancies and interstitials. Driven by Coulomb attraction, fast As interstitials preferentially annihilate Ga vacancies. The Ga vacancy population plummets below detectable limits—and the now unpinned Fermi level recovers—before being experimentally observed. This dynamical model solves the mystery of the missing Ga vacancy and reveals the importance of a multiscale approach to explore the dynamical chemical behavior in experimentally inaccessible short-time regimes.

Diaz, Leopoldo [Sandia National Laboratories (SNL-↗
DOE OSTI2024

Investigating the Effects of Individual Neutron-Induced Defects in Bipolar Junction Transistors

Here, this study investigates neutron-induced displacement damage in Bipolar Junction Transistors (BJTs) using TCAD models informed by Deep-Level-Transient-Spectroscopy (DLTS) data. These models are calibrated and validated against experimental measurements performed at various neutron fluences. Both npn and pnp transistor configurations are studied to analyze the effects of individual traps on carrier recombination and base leakage currents. In npn transistors, deep traps (0.42 eV from the conduction band) dominate at low voltages, while shallow traps (0.17 eV from the conduction band) become prominent at higher voltages. Conversely, pnp transistors have base leakage current predominantly due to deep-level traps. The study observes a notable trend in trap density versus fluence, characterized by a linear relationship on a log-log scale. These insights into defect evolution under radiation conditions are crucial for optimizing semiconductor device reliability and performance in radiation-prone environments.

42 ENGINEERING↗
DOE OSTI2026

Stellarator Design Exploration Using Symbolic-Regression Neutronics Surrogates

Systems codes require fast, simplified models to rapidly evaluate fusion power plant concepts, but neutronics analyses are often a computational bottleneck. Here, to address this, surrogate models for key neutronics responses have been developed using 3-D neutronics-ready models built with the open-source code ParaStell from a database of stellarator equilibria. Neutronics responses such as tritium breeding ratio (TBR), nuclear heating, and neutron-induced radiation damage displacements per atom (dpa) were simulated using OpenMC. Through sensitivity analysis and symbolic regression (SR), simple power-law formulas were derived connecting these neutronics responses to global stellarator parameters, including fusion power, plasma surface area, and plasma elongation. Validation shows these formulas can predict the simulation results with low error, enabling quick and accurate assessment of neutronics requirements in stellarator design exploration activities with systems codes.

Modeling↗
DOE OSTI2022

Radiation testing of 2.4 micron wavelength extended InGaAs photodiodes for 100 MeV/n carbon ions

We have successfully tested simultaneously 2.4 Micron Wavelength, Extended InGaAs Photodiodes having diameters of 20, 30, 40, 50, 100, 150, 200, 250, and 290 Micron, coupled with a Single Mode Fiber using 100 MeV/n Carbon (C) Ions up to a cumulative dose of ~40 krad. During irradiation, the devices were maintained at dry ice temperature, reverse biased at 100 mV, and their leakage current was continuously monitored in-situ during the run. After the exposure was completed, all nine devices were monitored for any change in their leakage current at 100 mV and room temperature for several weeks to monitor any annealing effects that may occur. Nine Photodiodes with the above varying diameters were radiated with 100 MeV/n Carbon Ions with a fluence of 10 6 , 10 7 , 10 8 , 10 9 , and 10 10 ions/cm 2 at each fluence level. At 100 MeV/n the Linear Energy Transfer (LET) of Carbon Ion is ~0.156 MeV-cm 2 /mg in Extended InGaAs, which is an order magnitude more than Proton (H) and Helium (He) Ions of 100 MeV/n energy. Thus, significant displacement damage is anticipated in the Extended InGaAs Photodiode with 100 MeV/n Carbon Ions with a total fluence of 1 × 1010 ions/cm 2 . Pre- and Post- radiation results were also measured for: (1) Leakage Current Vs. Voltage for the Extended InGaAs Photodiodes; (2) Responsivity (Quantum Efficiency) in A/W for Photodiodes; and (3) Bandwidth of the Photodiodes. All devices were found to be fully functional at the normal operating conditions and at both dry ice and room temperature. The leakage current increased up to a factor of ~2X at lower bias of 100 mV at the highest fluence of 10 10 ions/cm 2 , but not significantly at higher bias of 2 V. Finally, we did not observe any post radiation annealing effect for leakage current at room temperature and 100 mV bias for any of the devices after several weeks of data logging.

2.4 micron wavelength↗