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At least 73 records · Page 4

Self-consistent calculations and design considerations for a GaAs nipi doping superlattice solar cell

The authors present design constraints which show that a previously proposed GaAs nipi doping superlattice solar cell structure would not work as an efficient space solar cell. A structure based on the CLEFT process, which shows promise of being an efficient cell with very high radiation tolerance, is proposed. In order to test theoretically its viability and to optimize its design, self-consistent quantum mechanical calculations were made for a number of thicknesses of the n, i, and p layers and the dopings in the n and p layers. These results show that: 1) an i layer is not necessary; in fact, its presence makes it difficult to satisfy one of the key constraints; 2) a near-optimum design with 750-A thick n and p layers with dopings of 2.5E18/cu cm and a selective contact separation of 20 microns would yield both high efficiency and very high radiation tolerance.

Clark, Ralph O.↗

TEM studies of oxidized NiAl and Ni3Al cross sections

Cross sections of oxide scale/(Ni-Al) intermetallics were prepared by a new method and studied using primarily TEM. The cross sections were prepared by encasing an oxidized metal specimen sandwich in a low-melting-temperature zinc alloy. Observations of oxidized zirconium-doped beta-NiAl cross sections revealed crystallographic voids beneath an adherent Al2O3 scale. The oxide-metal interface was incoherent, but a high dislocation density in the metal near the interface suggested that a large tensile stress was induced by the attached oxide scale. A duplex Al2O3-NiAl2O4 scale formed on zirconium-doped and zirconium/boron-doped gamma-prime-Ni3Al alloys. Additional results are presented involving oxidation mechanisms and oxide-metal interface structures.

Doychak, J.↗

Design and Fabrication of High-Efficiency CMOS/CCD Imagers

An architecture for back-illuminated complementary metal oxide/semiconductor (CMOS) and charge-coupled-device (CCD) ultraviolet/visible/near infrared- light image sensors, and a method of fabrication to implement the architecture, are undergoing development. The architecture and method are expected to enable realization of the full potential of back-illuminated CMOS/CCD imagers to perform with high efficiency, high sensitivity, excellent angular response, and in-pixel signal processing. The architecture and method are compatible with next-generation CMOS dielectric-forming and metallization techniques, and the process flow of the method is compatible with process flows typical of the manufacture of very-large-scale integrated (VLSI) circuits. The architecture and method overcome all obstacles that have hitherto prevented high-yield, low-cost fabrication of back-illuminated CMOS/CCD imagers by use of standard VLSI fabrication tools and techniques. It is not possible to discuss the obstacles in detail within the space available for this article. Briefly, the obstacles are posed by the problems of generating light-absorbing layers having desired uniform and accurate thicknesses, passivation of surfaces, forming structures for efficient collection of charge carriers, and wafer-scale thinning (in contradistinction to diescale thinning). A basic element of the present architecture and method - the element that, more than any other, makes it possible to overcome the obstacles - is the use of an alternative starting material: Instead of starting with a conventional bulk-CMOS wafer that consists of a p-doped epitaxial silicon layer grown on a heavily-p-doped silicon substrate, one starts with a special silicon-on-insulator (SOI) wafer that consists of a thermal oxide buried between a lightly p- or n-doped, thick silicon layer and a device silicon layer of appropriate thickness and doping. The thick silicon layer is used as a handle: that is, as a mechanical support for the device silicon layer during micro-fabrication.

Pain, Bedabrata↗

Sulfur and Moisture Effects on Alumina Scale and TBC Spallation

It has been well established that a few ppmw sulfur impurity may segregate to the interface of thermally grown alumina scales and the underlying substrate, resulting in bond degradation and premature spallation. This has been shown for NiAl and NiCrAl-based alloys, bare single crystal superalloys, or coated superalloys. The role of reactive elements (especially Y) has been to getter the sulfur in the bulk and preclude interfacial segregation. Pt additions are also very beneficial, however a similar thermodynamic explanation does not apply. The purpose of the present discussion is to highlight some observations of these effects on Rene'142, Rene'N5, PWA1480, and PWA1484. For PWA1480, we have mapped cyclic oxidation and spallation in terms of potential sulfur interfacial layers and found that a cumulative amount of about one monolayer is sufficient to degrade long term adhesion. Depending on substrate thickness, optimum performance occurs if sulfur is reduced below about 0.2-0.5 ppmw. This is accomplished in the laboratory by hydrogen annealing or commercially by melt-fluxing. Excellent 1150 C cyclic oxidation is thus demonstrated for desulfurized Rene'142, Rene'N5, and PWA1484. Alternatively, a series of N5 alloys provided by GE-AE have shown that as little as 15 ppmw of Y dopant was effective in providing remarkable scale adhesion. In support of a Y-S gettering mechanism, hydrogen annealing was unable to desulfurize these alloys from their initial level of 5 ppmw S. This impurity and critical doping level corresponds closely to YS or Y2S3 stoichiometry. In many cases, Y-doped alloys or alloys with marginal sulfur levels exhibit an oxidative sensitivity to the ambient humidity called Moisture-Induced Delayed Spallation (MIDS). After substantial scale growth, coupled with damage from repeated cycling, cold samples may spall after a period of time, breathing on them, or immersing them in water. While stress corrosion arguments may apply, we propose that the underlying cause is related to a hydrogen embrittlement reaction: Al alloy + 3 H2O = Al(OH)3 + 3H(+) + 3e(-). This mechanism is derived from an analogous moisture-induced hydrogen embrittlement mechanism originally shown for Ni3Al and FeAl intermetallics. Consequently, a cathodic hydrogen charging technique was used to demonstrate that electrolytic de-scaling occurs for these otherwise adherent alumina scales formed on Y-doped Rene'N5, in support of hydrogen effects. Finally, some TBC observations are discussed in light of all of the above. Plasma sprayed 8YSZ coatings, produced on PWA1484 without a bond coat, were found to survive more than 1000 1-hr cycles at 1100 C when desulfurized to below 0.1 ppmw. At higher sulfur (1.2 ppmw) levels, moisture sensitivity and delayed TBC failure, referred to as Desk Top Spallation, occurred at just 200 hr. Despite a large degree of scatter, a factor of 5 in life improvement is indicated for desulfurized samples in cyclic furnace tests, confirming the beneficial effect of low sulfur alloys on model TBC systems. (DTS and moisture effects are also observed on commercially applied PVD 7YSZ coatings on Rene'N5+Y with Pt-aluminide bond coats). These types of catastrophic failure were subverted on the model system by segmenting the substrate into a network of 0.010 high ribs, spaced in. apart, prior to plasma spraying. No failures occurred after 1000 cycles at 1150 C or after 2000 cycles at 1100 C, even after water immersion. The benefit is described in terms of elasticity models and a critical buckling stress.

Smialek, James L.↗

SiN sub x passivation of silicon surfaces

The objectives were to perform surface characterization of high efficiency n+/p and p+/n silicon cells, to relate surface density to substrate dopant concentration, and to identify dominant current loss mechanisms in high efficiency cells. The approach was to measure density of states on homogeneously doped substrates with high frequency C-V and Al/SiN sub x/Si structures; to investigate density of states and photoresponse of high efficiency N+/P and P+/N cells; and to conduct I-V-T studies to identify current loss nechanisms in high efficiency cells. Results are given in tables and graphs.

Olsen, L. C.↗

Forward-bias tunneling - A limitation to bipolar device scaling

Forward-bias tunneling is observed in heavily doped p-n junctions of bipolar transistors. A simple phenomenological model suitable to incorporation in device codes is developed. The model identifies as key parameters the space-charge-region (SCR) thickness at zero bias and the reduced doping level at its edges which can both be obtained from CV characteristics. This tunneling mechanism may limit the maximum gain achievable from scaled bipolar devices.

Del Alamo, Jesus A.↗

Stability of Detached Grown Germanium Single Crystals

Detachment of the melt meniscus from the crucible during semiconductor Bridgman growth experiments has been observed in recent years, especially under microgravity experiments. Under earth conditions, the hydrostatic pressure counteracts the mechanism, whereby it is more difficult to achieve detached Bridgman growth. Attempts to get stable detached growth under terrestrial conditions have been discussed in the literature and have been the subject of recent experiments in our own group. The advantage of crystals grown without wall contact is obvious: In general, they possess a higher crystal quality than conventional Bridgman grown crystals with wall contact. However, due to the interaction of different parameters such as the wetting behavior of the melt with the crucible, and the dependence of the growth angle with the shape of the melt meniscus, the mechanism leading to detachment is very complicated and not completely understood. We have grown several doped and undoped Germanium crystals with the detached Bridgman and the normal Bridgman growth technique. Pyrolytic boron nitride containers were used for all growth experiments. In the detached grown crystals the typical gap thickness between the pBN crucible and the crystal is in the range of 10 to 100 micrometers, which was determined by performing profilometer measurements. Etch pit density measurements were also performed and a comparison between detached and attached grown crystals will be given. An interesting feature was detected on the surface of a detached grown crystal. Strong surface striations with an average axial distance of 0.5 mm were observed around the whole circumference. The maximum fluctuation of the gap thickness is in the range of 5-10 micrometers. These variations of the detached gap along the crystal axis can be explained by a kind of stiction of the melt/crucible interface and thus by a variation of the meniscus shape. This phenomenon leading to the fluctuation of the gap thickness will be discussed in detail.

Schweizer, M.↗

Stability of Detached Grown Germanium Single Crystals

Detachment of the melt meniscus from the crucible during semiconductor Bridgman growth experiments has been observed in recent years especially, under microgravity experiments. Under earth conditions, the hydrostatic pressure counteracts the mechanism, whereby it is more difficult to achieve detached Bridgman growth. Attempts to get stable detached growth under terrestrial conditions have been discussed in the literature and have been the subject of recent experiments in our own group. The advantage of crystals grown without wall contact is obvious: In general, they possess a higher crystal quality than conventional Bridgman grown crystals with wall contact. However, due to the interaction of different parameters such as the wetting behavior of the melt with the crucible, and the dependence of the growth angle with the shape of the melt meniscus, the mechanism leading to detachment is very complicated and not completely understood. We have grown several doped and undoped Germanium crystals with the detached Bridgman and the normal Bridgman growth technique. Pyrolytic boron nitride containers were used for all growth experiments. In the detached grown crystals the typical gap thickness between the pBN crucible and the crystal is in the range of 10 to 100 microns, which was determined by performing profilometer measurements. Etch pit density measurements were also performed and a comparison between detached and attached grown crystals will be given. An interesting feature was detected on the surface of a detached grown crystal. Strong surface striations with an average axial distance of 0.5mm were observed around the whole circumference. The maximum fluctuation of the gap thickness is in the range of 5-10 microns. These variations of the detached gap along the crystal axis can be explained by a kind of stiction of the melt/crucible interface and thus by a variation of the meniscus shape. This phenomenon leading to the fluctuation of the gap thickness will be discussed in detail.

Schweizer, M.↗

Defect chemistry and characterization of Hg sub 1x Cd sub x Te

Single crystal samples of undoped and doped Hg sub 1-x Cd sub x Te were annealed at varying temperatures and partial pressures of Hg. Hall effect and mobility measurements were carried out on these samples after quenching to room temperature. Based on the variation of the carrier concentration and the carrier mobility as a function of the partial pressure of Hg temperature, and dopant concentration, defect models were established for the doped and the undoped crystals. These models indicate that the native acceptor defects in both Hg0.8Cd0.2Te and Hg0.6Cd0.4Te doubly ionized and the native donor defects are negligible in concentration, implying that p to n conversion in these alloys occurs due only to residual donors. Incorporation mechanism of copper, indium, iodine, and phosphorus were investigated. A large concentration of indium is found to be paired with the native acceptor defects. Results on crystals doped with phosphorus indicate that phosphorus behaves amphoterically, acting as a donor on Hg lattice sites and as an acceptor intersitially on Te lattice sites. A majority of the phosphorus is found to be present as neutral species formed from the pairing reaction between phosphorus on Hg lattice sites and phosphorus in interstitial sites. Equilibrium constants for the intrinsic excitation reaction, as well as for the incorporation of the different dopants and the native acceptor defects were established.

Vydyanath, H. R.↗

Experimental Partitioning of Cr(3+) and Sc(3+) into Olivine: Mechanisms and Implications

Olivine (Mg, Fe)Si2O4 does not, by stoichiometry, accept cations such as Sc(3+) or Cr(3+). However, the partition coefficients of Sc and Cr between olivine and liquid are significant 0.2-1.0. We have measured Cr(3+) partition coefficients of near unity and have grown olivines with nearly 3 wt.% Sc2O3. Therefore, there must be a simple means of charge balancing 3+ ions in a crystal structure that was obviously not designed to receive other than 2+ ions on the olivine M sites. The simplest explanation is that two 3+ ions enter the olivine structure by displacing three 2+ ions and creating an M site vacancy. Even this explanation has difficulties. For minor elements in our experiments (~1 wt.%) the odds of a minor element 3+ ion finding a second 3+ for charge balance are of the order of 100:1 against. Because of the reducing conditions of our experiments, Fe(3+) will not suffice; and Al(3+) is not in sufficient quantity in olivine for charge balance. Therefore, Cr or Sc must, in effect, charge balance itself. For true trace elements, the problem is compounded many times. For an ion at the 10 ppm level the chances of finding a second (for example) Sc ion is approx.10(exp 5):1 against. Of course, any other 3+ ion would suffice but comparisons between percent level doping experiments and trace level partitioning indicate that Henry s law is obeyed. This implies that the same substitution mechanism occurs at both the percent and tens of ppm levels. There are two simple solutions to this problem: (i) The electrical conductivity of olivine is such that charge balance need not be local. This requires substantial domains within the olivine crystal in electrical contact by migration of vacancies or electronic defects. (ii) The 3+ cation brings along its own charge-balancing ion because it existed as a dimer in the silicate liquid. Olivine is not a true insulator but is actually a p-type semiconductor. Even so, electrical communication by this means is unlikely over the tens or hundreds of unit cells that would be required for charge balance to be local. Therefore, we cautiously favor the idea that melt speciation is the means by which 3+ ions enter the olivine structure. Possibly this model might be tested by in situ XAFS measurements or by molecular dynamical calculations.

Jones, John↗

Design considerations for a GaAs nipi doping superlattice solar cell

A new GaAs nipi doping superlattice solar cell structure is presented, which holds promise for high efficiency coupled with very high radiation tolerance. The structure has all contacts on the unilluminated side. Design constraints are presented which this structure must satisfy in order to exhibit high efficiency and high radiation tolerance. The results of self-consistent quantum mechanical calculations are presented which show that a viable design of this cell would include relatively thick n and p layers which are fairly heavily doped.

Clark, Ralph↗

Preparation of Proton Exchange Membranes and Lithium Batteries from Melamine-containing Ormosils

Our laboratory has recently reported a series of rodcoil polymers for lithium batteries that display dimensionally stable films with good ionic conductivity. The rod segments consist of rigid linear and branched polyimides and the coil segments are polyethylene oxides (PEO). It has been proposed that good mechanical and transport properties are due to phase separation between the rod and coil segments. It was also observed that increased branching and molecular weight lead to increased conductivity. The following study was undertaken to assess the effects of phase separation in polyalkylene oxides connected by melamine linkages. Melamine was chosen as the linking unit because it provides a branching site, cation binding sites to help ionic transport between polymer chains, and the opportunity for self assembly through hydrogen bonding. Polymers were made by the reaction of cyanuric chloride with a series of amine-terminated alkylene oxides. A linear polymer was first made, followed by reaction of the third site on cyanuric chloride with varying ratios of monofunctional Jeffamine and (3-aminopropyl)triethoxysilane. The lithium trifluoromethane sulfonamide-doped polymers are then crosslinked through a sol-gel process to form free-standing films. Initial results have shown mechanically strong films with lithium conductivities on the order of 2 x 10(exp -5) S/cm at ambient temperature. In a separate study, organically modified silanes (Ormosils) that contain sulfonic acid derivatized melamines have been incorporated into proton exchange membranes. The membranes are made by reaction of the primary amine groups of various ratios of melamine derivative and difunctional Jeffamine (MW = 2000) with the epoxide group of (3-Glycidyloxypropyl)trimethoxysilane. The films were then cross-linked through a sol-gel process. Resulting sulfuric acid doped films are strong, flexible, and have proton conductivities on the order of 2 x l0(exp -2) S/cm (120 C, 25% relative humidity). Our best results have been observed when films contain 60% PEO and 40% sulfonated melamine.

Tigelaar, Dean M.↗

Modeling of the Temperature-dependent Spectral Response of In(1-x)Ga(x)Sb Infrared Photodetectors

A model of the spectral responsivity of In(1-x) Ga(x) Sb p-n junction infrared photodetectors has been developed. This model is based on calculations of the photogenerated and diffusion currents in the device. Expressions for the carrier mobilities, absorption coefficient and normal-incidence reflectivity as a function of temperature were derived from extensions made to Adachi and Caughey-Thomas models. Contributions from the Auger recombination mechanism, which increase with a rise in temperature, have also been considered. The responsivity was evaluated for different doping levels, diffusion depths, operating temperatures, and photon energies. Parameters calculated from the model were compared with available experimental data, and good agreement was obtained. These theoretical calculations help to better understand the electro-optical behavior of In(1-x) Ga(x) Sb photodetectors, and can be utilized for performance enhancement through optimization of the device structure.

Gonzalex-Cuevas, Juan A.↗

Raman and Photoluminescence Spectroscopy of Er(3+) Doped Heavy Metal Oxide Glasses

The potential applications of rare-earth ion doped materials include fiber lasers which can be pumped conveniently by infrared semiconductor laser diodes. The host material systems most widely studied are fluoride crystals and glasses because fluorides have low nonradiative relaxation rates due to their lower phonon energies. However, the mechanical strength, chemical durability and temperature stability of the oxide glasses are generally much better than fluoride glasses. The objective of this research was to investigate the optical and spectroscopic properties of Er(3+)-doped lead-germanate and lead-tellurium-germanate glasses. The maximum vibrational energy of lead-tellurium-germanate glasses are in the range of 740-820/cm, intermediate between those of silicate (1150/cm) and fluoride (530/cm) glasses.

Dyer, Keith↗

Stress Tuning of Laser Crystals

The topic of stress tunable laser crystals is addressed in this study with the purpose of determining the piezo-optic coefficients of a new laser material. This data was collected using a quadruple pass birefringence technique because of its high degree of sensitivity relative to the other methods examined including fringe shift analysis using a Mach-Zender interferometer. A green He-Ne laser was passed through a light chopper and Glan-Thompson prism before entering a crystal of Erbium doped Yttrium Aluminum Garnet (Er:YAG) (used in order to validate the experimental technique). The Er:YAG crystal is mounted in a press mechanism and the laser is quadruple passed through test specimen before being returned through the prism and the orthogonally polarized portion of the beam measured with a optical sensor. At a later stage, the Er:YAG crystal was replaced with a new crystal in order to determine the piezo-optic coefficients of this uncharacterized material. The applied load was monitored with the use of a 50 lb. load cell placed in line with the press. Light transmission readings were taken using a lock-in amplifier while load cell measurements were taken with a voltmeter from a 5 volt, 0.5 amp power supply. Despite the fact that an effective crystal press damping system was developed, size limitations precluded the use of the complete system. For this reason, data points were taken only once per full turn so as to minimize the effect of non uniform load application on the collected data. Good correlation was found in the transmission data between the experimentally determined Er:YAG and the previously known peizo-optic constants of non-doped crystal with which it was compared. The variation which was found between the two could be accounted for by the aforementioned presence of Erbium in the experimental sample (for which exact empirical data was not known). The same test procedure was then carried out on a Yttrium Gallium Aluminum garnet (YGAG) for the purpose of establishing values of its unknown piezo-optic constant tensor using experimentally collected transmission data. Significant variation between the piezo-optic constants of YAG and YGAG crystals was found however, the excellent data correlation of separate experimental runs carried out on the YGAG sample demonstrates the validity of these results. The data collected during the stressing of the YGAG was of high quality, however the amount of data collected was somewhat limited by a fracture of YGAG specimen which undoubted altered the crystalline lattice structure and hence precluded any further testing.

Carty, Atherton A.↗

Studies of molecular properties of polymeric materials: Aerospace environmental effects on three linear polymers

The development of crystal handling techniques for reflection infrared spectroscopy and methods for the fabrication and testing of tensile specimens are discussed. Data from mechanical, ac and dc electrical, and electron paramagnetic resonance studies conducted to determine the effects of 0.1-MeV and 1.0-MeV electron radiation on Mylar, Kapton, Ultem, and metal-doped Ultem are presented. Total doses ranging from 1 X 10 to the 8 rads to 1 X 10 to the 10 rads and dose rates from 5 X 10 to the 7 rads/hr to 1 X 10 to the 9 rads/hr were employed. The results of a study on the effects of aircraft service-environment fluids on Ultem are also reported. The weights and mechanical properties of Ultem were evaluated before and after exposure to water, JP4, Skydrol, an antifreeze, and a paint stripper.

Harries, W. L.↗