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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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61 records · Page 4

A theoretical analysis of steady-state charge collection in simple diodes under high-injection conditions

A previous rigorous mathematical analysis of drift-diffusion equations was used to investigate collected charge in a simple reverse-biased p-n junction diode exposed to an ionization source that liberates carriers (electron-hole pairs) in a quasi-neutral region within the diode. Each of two simple models was found to agree with the more rigorous analysis when carrier liberation is sufficiently intense. One is the sensitive volume (SV) model, and the other was called “ambipolar diffusion with a cutoff” (ADC). The earlier rigorous analysis was worked out in detail only for a localized source, i.e., a point source of carrier liberation, so it was able to validate the applicability of each simple model only for that case. The present paper treats an arbitrary spatial distribution of carrier generation and concludes that the ADC model remains valid for this more general case, but the SV model does

Edmonds, Larry D.↗

Effect of Plasma Sheaths on Earth Re-entry MHD Processes

The first study of the full coupling between the aerothermodynamics, the magnetohydrodynamics, and the plasma sheaths within earth entry flows is here per-formed. The problem tackled herein is representative of a force-generating MHD patch located between the plenum and the frustum of a capsule entering the earth’s atmosphere at Mach 34. The reactions are obtained from a modified 11-species Park chemical solver. The physical model fully couples the drift-diffusion model for the sheaths to the multispecies Navier-Stokes equations for the plasma flow. The Hall and ion slip effects are taken into consideration within the plasma flow and within the sheaths. Results obtained indicate that the cathode sheath can exert significant resistance to current flow and thus reduce the MHD-generated force by 40% or more. The effect of the sheath on the MHD force is found to be more pronounced at lower applied magnetic field.

Earth Re-entry↗

Effect of Plasma Sheaths on Earth Re-entry MHD Processes

The first study of the full coupling between the aerothermodynamics, the magnetohydrodynamics, and the plasma sheaths within earth entry flows is here per-formed. The problem tackled herein is representative of a force-generating MHD patch located between the plenum and the frustum of a capsule entering the earth’s atmosphere at Mach 34. The reactions are obtained from a modified 11-species Park chemical solver. The physical model fully couples the drift-diffusion model for the sheaths to the multispecies Navier-Stokes equations for the plasma flow. The Hall and ion slip effects are taken into consideration within the plasma flow and within the sheaths. The effect of the electrode material on the MHD process is studied. Using thoriated tungsten instead of graphite leads to a four-fold increase in the Lorentz forces and also leads to significantly reduced heat fluxes on the cathode. This is attributed to the much higher electrical conductivity of the thoriated tungsten sheath reducing by orders of magnitude the plasma electrical resistance near the surfaces.

Bernard Parent↗

Co‐Doping Approach for Enhanced Electron Extraction to TiO 2 for Stable Inorganic Perovskite Solar Cells

Inorganic perovskite CsPbI 3 solar cells hold great potential for improving the operational stability of perovskite photovoltaics. However, electron extraction is limited by the low conductivity of TiO 2 , representing a bottleneck for achieving stable performance. In this study, a co‐doping strategy for TiO 2 using Nb(V) and Sn(IV), which reduces the material's work function by 80 meV compared to Nb(V) mono‐doped TiO 2 , is introduced. To gain fundamental understanding of the processes at the interfaces between the perovskite and charge‐selective layer, transient surface photovoltage measurements are applied, revealing the beneficial effect of the energetic and structural modification on electron extraction across the CsPbI 3 /TiO 2 interface. Using 2D drift‐diffusion simulations, it is found that co‐doping reduces the interface hole recombination velocity by two orders of magnitude, increasing the concentration of extracted electrons by 20%. When integrated into n–i–p solar cells, co‐doped TiO 2 enhances the projected T S80 lifetimes under continuous AM1.5G illumination by a factor of 25 compared to mono‐doped TiO 2 . This study provides fundamental insights into interfacial charge extraction and its correlation with operational stability of perovskite solar cells, offering potential applications for other charge‐selective contacts.

14 SOLAR ENERGY↗

Discrete stochastic model of point defect-dislocation interaction for simulating dislocation climb

Dislocation climb is an important high temperature process in metals plasticity, responsible for the phenomena such as creep, swelling, or hardening. Climb is defined by the ability of dislocations to leave their original glide plane by interacting with point defects. As such, dislocation climb is controlled by point defect diffusion/absorption/emission, all of which involve thermal activation. The existing thermodynamically consistent models for climb are generally formulated in a continuum framework, through the definition of effective defect fluxes and climb propensities in response to thermodynamic driving forces. However, the point-wise discrete nature of vacancies (and/or self-interstitials) confers a highly discrete nature to the climb dynamics, which is also strongly affected by elastic forces. The combination of discreteness, thermal activation, and elasticity makes this process too challenging for direct atomistic methods such as molecular dynamics. Here we develop a kinetic Monte Carlo model that captures vacancy generation and transport kinetics acting in conjuction with the evolving elastic fields provided by discrete dislocation dynamics simulations. The two models are coupled via the applied stresses and stress gradients generated by dislocation structures at vacancy locations. Our simulations reveal two surprising results. First that climb is dominated by vacancy emission even when the background vacancy concentration is much higher than the equilibrium one. And, second, that climb velocities might be much faster than otherwise believed when one uses the classical theories of climb. These effects are due to the locality of vacancy-dislocation processes, which are not captured in classical treatments that assume smooth vacancy fluxes and homogeneous concentrations. We apply the method to study elementary climb processes in body-centered cubic iron and furnish climb mobility functions to be used in parametric dislocation dynamics and/or crystal plasticity simulations. Here, we apply the technique to study non-conservative plastic bypass of spherical precipitates by edge dislocations and point out the differences between our discrete approach and existing continuum formulations.

36 MATERIALS SCIENCE↗

Extension of the ADC Charge-Collection Model to Include Multiple Junctions

The ADC model is a charge-collection model derived for simple p-n junction silicon diodes having a single reverse-biased p-n junction at one end and an ideal substrate contact at the other end. The present paper extends the model to include multiple junctions, and the goal is to estimate how collected charge is shared by the different junctions.

drift-diffusion↗