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A method is provided for marking electrical Wiring with condition indicators. One or more markers are added to one or both of the insulative material and a surface of an electrical conductor such that it bonds thereto. Each marker is capable of emanating into a surrounding atmospheric environment as a gaseous effluent in response to a specific condition experienced by the electrical conductor.
Gold coated stainless steel tubes containing insulated electrical conductors are brazed at a low temperature to a copper coated stainless steel sealing block with a gold-copper eutectic. This produces an effective seal without using flux or damaging the electrical conductors.
A radio frequency power load and associated method. A radio frequency power load apparatus may include a container with an ionized fluid therein. The apparatus may include one conductor immersed in a fluid and another conductor electrically connected to the container. A radio frequency transmission system may include a radio frequency transmitter, a radio frequency amplifier connected to the transmitter and a radio frequency power load apparatus connected to the amplifier. The apparatus may include a fluid having an ion source therein, one conductor immersed in a fluid, and another conductor electrically connected to the container. A method of dissipating power generated by a radio frequency transmission system may include constructing a waveguide with ionized fluid in a container and connecting the waveguide to an amplifier of the transmission system.
An implementation of the Asymptotic Waveform Evaluation (AWE) technique is presented for obtaining the frequency response of the Radar Cross Section (RCS) of arbitrarily shaped, three-dimensional perfect electric conductor (PEC) bodies. An Electric Field Integral Equation (EFIE) is solved using the Method of Moments (MoM) to compute the RCS. The electric current, thus obtained, is expanded in a Taylor series around the frequency of interest. The coefficients of the Taylor series (called 'moments') are obtained using the frequency derivatives of the EFIE. Using the moments, the electric current on the PEC body is obtained over a frequency band. Using the electric current at different frequencies, RCS of the PEC body is obtained over a wide frequency band. Numerical results for a square plate, a cube, and a sphere are presented over a bandwidth. A good agreement between AWE and the exact solution over the bandwidth is observed.
An implementation of the Model Based Parameter Estimation (MBPE) technique is presented for obtaining the frequency response of the Radar Cross Section (RCS) of arbitrarily shaped, three-dimensional perfect electric conductor (PEC) bodies. An Electric Field Integral Equation (EFTE) is solved using the Method of Moments (MoM) to compute the RCS. The electric current is expanded in a rational function and the coefficients of the rational function are obtained using the frequency derivatives of the EFIE. Using the rational function, the electric current on the PEC body is obtained over a frequency band. Using the electric current at different frequencies, RCS of the PEC body is obtained over a wide frequency band. Numerical results for a square plate, a cube, and a sphere are presented over a bandwidth. Good agreement between MBPE and the exact solution over the bandwidth is observed.
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Managing heat in electrical conductors is a major challenge to meet the demands for sustainable energy use and electrical reliability, most notably power electronics and energy-critical electrical machines. Achieving such disparate functionalities, such as high temperature thermal and electrical reliability, require rational design and manufacturing of thermal conductor material and its hierarchical structures. Here we present hierarchical thermal-conductive nanocomposites, consisting of nanostructured ceramic conformal coating and aligned ultrahigh molecular weight polyethylene fiber, to tailor heat dissipation in electric conductors. The hybrid aligned thermal interface exhibits a highly desirable temperature dependent anisotropic high thermal conductivity with 0.98W m –1 K –1 and dielectric strength with 3.4. In addition, electrically insulating thermal interfaces demonstrate high-performing and reliable electrical systems under the dynamic load conditions. The surface temperature of heterogeneous ceramic-polymer encapsulated conductor is 17.8 °C lower than that of polymer-encapsulated conductor at the same electrical load. Consequently, the findings shown here hold great promises for directing heat extraction in electrical machine systems, advancing thermal management for emerging electronic applications.
A novel feed structure, for an antenna having a resonant electric field structure, comprising a patch element, an integrated circuit attached to the patch element, at least one inner conductor electrically connected to and terminating at the integrated circuit on a first end of the at least one inner conductor, wherein the at least one inner conductor extends through and is not electrically connected to the patch element, and wherein the at least one inner conductor is available for electrical connectivity on a second end of the at least one inner conductor, and an outer conductor electrically connected to and terminating at the patch element on a first end of the outer conductor, wherein the outer conductor is available for electrical connectivity on a second end of the outer conductor, and wherein the outer conductor concentrically surrounds the at least one inner conductor from the second end of the at least one inner conductor available for electrical connectivity to the first end of the outer conductor terminating at the patch element.
A plurality of flexible cylindrical members, termed flex-gears and having gear tooth type perimeters are located in an annular space between two concentric rotating gear members, one an inner gear member and the other an outer ring gear member, both of which have mutually facing toothed surfaces which engage the flex-gears. The flex-gears rotate and orbit around the annular space as planetary gears when the inner and outer gear members rotate with respect to one another. Pairs of these elements located in two mutually parallel planes and separated by insulators provide two electrical conductor paths across which an electrical signal source, AC or DC, can be connected and coupled to an electrical device. Alternatively, one set of elements including outer gears segmented into mutually insulated semicircles and inner gears segmented into mutually insulated quadrants can be used.
To comply with lead-free legislation, many manufacturers have converted from tin-lead to pure tin finishes of electronic components. However, pure tin finishes have a greater propensity to grow tin whiskers than tin-lead finishes. Since tin whiskers present an electrical short circuit hazard in electronic components, simulations have been developed to quantify the risk of said short circuits occurring. Existing risk simulations make the assumption that when a free tin whisker has bridged two adjacent exposed electrical conductors, the result is an electrical short circuit. This conservative assumption is made because shorting is a random event that had an unknown probability associated with it. Note however that due to contact resistance electrical shorts may not occur at lower voltage levels. In our first article we developed an empirical probability model for tin whisker shorting. In this paper, we develop a more comprehensive empirical model using a refined experiment with a larger sample size, in which we studied the effect of varying voltage on the breakdown of the contact resistance which leads to a short circuit. From the resulting data we estimated the probability distribution of an electrical short, as a function of voltage. In addition, the unexpected polycrystalline structure seen in the focused ion beam (FIB) cross section in the first experiment was confirmed in this experiment using transmission electron microscopy (TEM). The FIB was also used to cross section two card guides to facilitate the measurement of the grain size of each card guide's tin plating to determine its finish .
Existing risk simulations make the assumption that when a free tin whisker has bridged two adjacent exposed electrical conductors, the result is an electrical short circuit. This conservative assumption is made because shorting is a random event that has an unknown probability associated with it. Note however that due to contact resistance electrical shorts may not occur at lower voltage levels. In our first article we developed an empirical probability model for tin whisker shorting. In this paper, we develop a more comprehensive empirical model using a refined experiment with a larger sample size, in which we studied the effect of varying voltage on the breakdown of the contact resistance which leads to a short circuit. From the resulting data we estimated the probability distribution of an electrical short, as a function of voltage. In addition, the unexpected polycrystalline structure seen in the focused ion beam (FIB) cross section in the first experiment was confirmed in this experiment using transmission electron microscopy (TEM). The FIB was also used to cross section two card guides to facilitate the measurement of the grain size of each card guide's tin plating to determine its finish.
To comply with lead-free legislation, many manufacturers have converted from tin-lead to pure tin finishes of electronic components. However, pure tin finishes have a greater propensity to grow tin whiskers than tin-lead finishes. Since tin whiskers present an electrical short circuit hazard in electronic components, simulations have been developed to quantify the risk of said short circuits occurring. Existing risk simulations make the assumption that when a free tin whisker has bridged two adjacent exposed electrical conductors, the result is an electrical short circuit. This conservative assumption is made because shorting is a random event that had an unknown probability associated with it. Note however that due to contact resistance electrical shorts may not occur at lower voltage levels. In our first article we developed an empirical probability model for tin whisker shorting. In this paper, we develop a more comprehensive empirical model using a refined experiment with a larger sample size, in which we studied the effect of varying voltage on the breakdown of the contact resistance which leads to a short circuit. From the resulting data we estimated the probability distribution of an electrical short, as a function of voltage.
To comply with lead-free legislation, many manufacturers have converted from tin-lead to pure tin finishes of electronic components. However, pure tin finishes have a greater propensity to grow tin whiskers than tin-lead finishes. Since tin whiskers present an electrical short circuit hazard in electronic components, simulations have been developed to quantify the risk of said short circuits occurring. Existing risk simulations make the assumption that when a free tin whisker has bridged two adjacent exposed electrical conductors, the result is an electrical short circuit. This conservative assumption is made because shorting is a random event that had an unknown probability associated with it. Note however that due to contact resistance electrical shorts may not occur at lower voltage levels. In our first article we developed an empirical probability model for tin whisker shorting. In this paper, we develop a more comprehensive empirical model using a refined experiment with a larger sample size, in which we studied the effect of varying voltage on the breakdown of the contact resistance which leads to a short circuit. From the resulting data we estimated the probability distribution of an electrical short, as a function of voltage. In addition, the unexpected polycrystalline structure seen in the focused ion beam (FIB) cross section in the first experiment was confirmed in this experiment using transmission electron microscopy (TEM). The FIB was also used to cross section two card guides to facilitate the measurement of the grain size of each card guide's tin plating to determine its finish.
High temperature insulation materials, silver alloy, and copper wires tested for aerospace electric conductor application
An electro-magnetic pulse (EMP) event can induce large currents and voltages on electrical conductors such as electrical power transmission lines which span many kilometers and the shorter lines typically tens of meters in length used to monitor equipment controlling the power grid. The exact current and voltage induced on a conductor depends on many factors, such as line height, diameter and length as well as ground conductivity and the location of the EMP event relative to the conductor. The current work focus on the line location and orientation relative to the EMP source. A statistical, Monte-Carlo approach is used in sampling the line configuration and then calculating the induced current and voltage. Thousands of EMP events are simulated on the region of the Earth where the EMP event can couple to a given above-ground conductor and the resulting current and voltage is then calculated on that conductor. Through the many simulations, one can assemble statistics on the insult including the peak value, rise time and pulse width.
Nonvolatile electronic memory devices that store data in the form of electrical- resistance values, and memory circuits based on such devices, have been invented. These devices and circuits exploit an electrically-variable-resistance phenomenon that occurs in thin films of certain oxides that exhibit the colossal magnetoresistive (CMR) effect. It is worth emphasizing that, as stated in the immediately preceding article, these devices function at room temperature and do not depend on externally applied magnetic fields. A device of this type is basically a thin film resistor: it consists of a thin film of a CMR material located between, and in contact with, two electrical conductors. The application of a short-duration, low-voltage current pulse via the terminals changes the electrical resistance of the film. The amount of the change in resistance depends on the size of the pulse. The direction of change (increase or decrease of resistance) depends on the polarity of the pulse. Hence, a datum can be written (or a prior datum overwritten) in the memory device by applying a pulse of size and polarity tailored to set the resistance at a value that represents a specific numerical value. To read the datum, one applies a smaller pulse - one that is large enough to enable accurate measurement of resistance, but small enough so as not to change the resistance. In writing, the resistance can be set to any value within the dynamic range of the CMR film. Typically, the value would be one of several discrete resistance values that represent logic levels or digits. Because the number of levels can exceed 2, a memory device of this type is not limited to binary data. Like other memory devices, devices of this type can be incorporated into a memory integrated circuit by laying them out on a substrate in rows and columns, along with row and column conductors for electrically addressing them individually or collectively.
Investigation of the manipulation of solid electrical conductors with high-intensity transient magnetic fields known as magnetic forming
This paper treats a liquid-metal flow inside an electrically insulating cylinder with electrically conducting solids above and below the liquid region. There is a uniform axial magnetic field, and there is an electric current through the liquid and both solids. Since the lower liquid-solid interface is concave into the solid and since the liquid is a better electrical conductor than the adjacent solid, the electric current is locally concentrated near the centerline. The return to a uniform current distribution involves a radial electric current which interacts with the axial magnetic field to drive an azimuthal flow. The axial variation of the centrifugal force due to the azimuthal velocity drives a meridional circulation with radial and axial velocities. This problem models the effects of Peltier marking during the vertical Bridgman growth of semiconductor crystals with an externally applied magnetic field, where the meridional circulation due to the Peltier Current may produce important mixing in the molten semiconductor.