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Results for “electrical doping”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 73 records · Page 4
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

Superconductivity in magnetically doped SrTiO 3

Doped SrTiO 3 is a superconductor whose pairing mechanism is still not fully understood. The response of a superconductor to impurities has long been used to obtain insights into the nature of the superconducting state. In this work, we investigate the superconductivity of SrTiO 3 films that are doped or alloyed with different rare earth ions, which carry a magnetic moment.. It is shown that large concentrations (up to a few percent) of rare earth ions with unpaired f-electrons, such as Sm and Eu, do not reduce the superconducting critical temperature and critical fields. The finding is independent of whether the rare earth ion acts as a dopant or is an isovalent impurity. The interactions between the superconducting condensate and the magnetic dopants that could result in the observed insensitivity to magnetic impurities are discussed.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Zinc–hydrogen and zinc–iridium pairs in β-Ga 2 O 3

Zinc-doped monoclinic gallium oxide (β-Ga 2 O 3 :Zn) has semi-insulating properties that could make it a preferred material as a substrate for power devices. In this work, infrared and UV/Visible spectroscopy were used to investigate the defect properties of bulk β-Ga 2 O 3 :Zn crystals. As-grown crystals contain a single O-H stretching mode at 3486.7 cm -1 due to a neutral ZnH complex. A deuterium-annealed sample displays the corresponding O-D stretching mode at 2582.9 cm -1 , confirming the O-H assignment. A strong Ir 4+ electronic transition at 5147.6 cm -1 is also observed, along with sidebands attributed to ZnIr pairs. These sidebands show distinct differences compared with Mg-doped samples; most importantly, several peaks are attributed to Ir 4+ paired with a Zn on the tetrahedral Ga(I) site. Annealing under an oxygen atmosphere produced insulating material with a resistance above 1 TΩ.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Space charge limited corrections to the power figure of merit for diamond

An interpretation of the unipolar figure of merit is formulated for wide bandgap (WBG) semiconductors based on the on-state specific resistance (RON,sp) derived from the space charge limited current–voltage relationship (Mott–Gurney square law). The limitations of the traditional Ohmic R ON,sp for WBG semiconductors are discussed, particularly at low doping, while the accuracy of the Mott–Gurney based R ON,sp is confirmed by Silvaco ATLAS drift–diffusion simulations of diamond Schottky pin diodes. The effects of incomplete ionization are considered as well.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2022

Tuning superconductivity of Bi 2 Sr 2 CaCu 2 O 8+x by fluoride ion intercalation with LaF 3 gate dielectric

Here, we demonstrate fluorine intercalation into Bi 2 Sr 2 CaCu 2 O 8+x (BSCCO) flakes, as thick as 100 nm, by back-gating a single crystalline LaF 3 substrate. Element-sensitive analysis not only confirms the presence of fluorine in BSCCO after gating but also reveals lateral diffusion of fluorine in BSCCO. Transport measurements further demonstrate the hole-doping effect of fluoride ions in BSCCO through effective modulation of the superconducting transitions. Our work introduces a distinct type of ions (F - ) that can be intercalated into materials via solid state back-gating. It broadens the toolbox of ion back-gating and is useful for addressing exotic phenomena in the heavily hole doped regime.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

Study of phase decoherence in GeSn (8%) through measurements of the weak antilocalization effect

Alloying germanium with tin offers a means to modulate germanium's electronic structure, enabling a greater degree of control over quantum properties such as the retention of the phase or spin of the electron wave. However, the extent to which the presence of high dopant concentrations in GeSn alters these quantum behaviors is poorly understood. Here, we investigate the role of dopant concentrations on phase coherence through measurements of the weak antilocalization (WAL) effect at temperatures between 30 mK and 10 K in p-GeSn (8%) thin films, which were doped to a series of carrier densities on the order of 10 12 cm –2 . Phase coherence and spin–orbit lengths were extracted from the magnetoconductivities using the 2D Hikami–Larkin–Nagaoka model. Phase coherence lengths peaked at 577, 593, and 737 nm for the low-, mid-, and high-density samples, while upper limits on the spin–orbit lengths of less than 25 nm were relatively independent of carrier density and temperature. The phase coherence lengths increased as the temperature decreased but changed only minimally with carrier density, contrary to common models of temperature-dependent inelastic scattering. Saturation of the phase coherence lengths occurred below 600 mK. Based on these findings, intrinsically generated inelastic scattering mechanisms such as two-level systems or impurity band scattering likely contribute to phase decoherence in these alloys. Our results provide insight into the inelastic scattering mechanisms of GeSn, while suggesting a need for further investigation into phase decoherence mechanisms in doped group-IV alloys.

42 ENGINEERING↗
DOE OSTI2025

Local charge-screening and polarization switching in a ferroelectric ionic-superconductor

For ferroelectric ionic-conductors, polarization switching is complicated by the interplay between ion mobility and charge screening effects. When the ionic charge carriers also play a key role in the domain reversal, such as in Rb-doped KTiOPO 4 (RKTP), a higher level of complexity is introduced. RKTP provides an ideal platform for investigating the relationship between ionic conductivity and polarization reversal because its highly anisotropic crystal properties allow selective modification of material characteristics through diffusive cation doping. Here, we use indiffused Ba/K doping to create a significant increase in the ionic conductivity. Time-of-flight secondary ion mass spectrometry is employed to map Ba/K doping within the RKTP crystal and correlate it to changes in ionic mobility and polarization switching characteristics under an external field applied to the nonpolar face. Using band-excitation piezoresponse force microscopy, we demonstrate a selective switching-inhibition mechanism driven by the enhanced charge screening.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Selectively patterned Mg-doped GaN by SiN x -driven hydrogen injection

In this work, we demonstrate a method to achieve selectively patterned Mg-doped GaN layers using hydrogen drive-in through plasma-enhanced chemical vapor deposition (PECVD) silicon nitride (SiN x ) films. Activated Mg-doped GaN layers were selectively deactivated by patterned PECVD SiN x films with low-temperature annealing and showed high-resistive behavior. Spatially resolved photoluminescence measurements were used to optically verify the deactivation of Mg acceptors and showed distinct features corresponding to activated and deactivated Mg in GaN. The method suggested here provides a simple and effective method to achieve patterned Mg-doped GaN regions without thermal and plasma damage, which could cause degradation of device performance. The proposed method could provide a way to achieve future high-performance GaN lateral and vertical devices that rely on laterally patterned doping.

42 ENGINEERING↗
NASA NTRS1978

A simple theory of back surface field /BSF/ solar cells

A theory of an n-p-p/+/ junction is developed, entirely based on Shockley's depletion layer approximation. Under the further assumption of uniform doping the electrical characteristics of solar cells as a function of all relevant parameters (cell thickness, diffusion lengths, etc.) can quickly be ascertained with a minimum of computer time. Two effects contribute to the superior performance of a BSF cell (n-p-p/+/ junction) as compared to an ordinary solar cell (n-p junction). The sharing of the applied voltage among the two junctions (the n-p and the p-p/+/ junction) decreases the dark current and the reflection of minority carriers by the builtin electron field of the p-p/+/ junction increases the short-circuit current. The theory predicts an increase in the open-circuit voltage (Voc) with a decrease in cell thickness. Although the short-circuit current decreases at the same time, the efficiency of the cell is virtually unaltered in going from a thickness of 200 microns to a thickness of 50 microns. The importance of this fact for space missions where large power-to-weight ratios are required is obvious.

Von Roos, O.↗
NASA NTRS1984

Electrical properties of metal-doped pyridine-derived polyimide films

A series of polyimide films containing pyridine coordinating groups doped with cobalt or nickel ions has been examined. Using 3,3',4,4'-benzophenonetetracarboxylic acid dianhydride, films were prepared in combination with 4,4'-oxydianiline, 4,4'-dianiline sulfide, 3,3'-bis(aminopyridine) sulfide and 2,2'-dioxyphenelenebis (5,5'-aminopyridine). Room temperature volume resistivities have been found to decrease slightly with sulfur and pyridine containing diamines relative to diamines which do not contain these functionalities. Doping with cobalt and nickel additives results in further lowering of room temperature volume resistivity. Preliminary temperature profiling experiments have shown that volume resistivity decreases as T(g) is approached.

Khor, E.↗
DOE OSTI2022

First-principles calculation of gate-tunable ferromagnetism in magic-angle twisted bilayer graphene under pressure

Magic-angle twisted bilayer graphene (MATBG) is notable as a highly tunable platform for investigating strongly correlated phenomena such as unconventional superconductivity and quantum spin liquids, due to easy control of doping level through gating and sensitive dependence of the magic angle on hydrostatic pressure. Experimental observations of correlated insulating states, unconventional superconductivity and ferromagnetism in MATBG indicate that this system exhibits rich exotic phases. In this work, using density functional theory calculations in conjunction with the effective screening medium method, we find the MATBG under pressure at a twisting angle of 2.88 °and simulate how its electronic states evolve when doping level and electric field perpendicular to plane are tuned by gating. Our calculations show that, at doping levels between two electrons and four holes per moiré unit cell, a ferromagnetic (FM) solution with spin density localized at AA stacking sites is lower in energy than the nonmagnetic solution. The magnetic moment of this FM state decreases with both electron and hole doping and vanishes at four electrons/holes doped per moiré unit cell. Hybridization between the flat bands at the Fermi level and the surrounding dispersive bands can take place at finite doping. On increasing the out-of-plane electric field at zero doping, a transition from the FM state to the nonmagnetic one is seen. An investigation of impurity effects shows that both absorption of O 2 molecules and occurrence of Stone–Wales impurities suppress the FM state, and the mechanisms are understood from our calculations. We also analyze the interlayer bonding character due to flat bands via Wannier functions. Finally, we report trivial band topology of the flat bands in the FM state at a certain doping level.

Physics↗
NASA NTRS1996

Effect of variations in the doping profiles on the properties of doped multiple quantum well avalanche photodiodes

The purpose of this study is to use both theoretical and experimental evidence to determine the impact of doping imbalance and symmetry on the physical and electrical characteristics of doped multiple quantum well avalanche photodiodes (APD). Theoretical models have been developed to calculate the electric field valence and conduction bands, capacitance-voltage (CV), and carrier concentration versus depletion depth profiles. The models showed a strong correlation between the p- and n-doping balance inside the GaAs wells and the number of depleted stages and breakdown voltage of the APD. A periodic doping imbalance in the wells has been shown to result in a gradual increase (or decrease) in the electric field profile throughout the device which gave rise to partially depleted devices at low bias. The MQW APD structures that we modeled consisted of a 1 micron top p(+)-doped (3 x 10(exp 18) cm(exp -3)) GaAs layer followed by a 1 micron region of alternating layers of GaAs (500 A) and Al(0.42)Ga(0.58)As (500 A), and a 1 micron n(+) back layer (3 x 10(exp 18) cm(exp -3)). The GaAs wells were doped with p-i-n layers placed at the center of each well. The simulation results showed that in an APD with nine doped wells, and where the 50 A p-doped layer is off by 10% (p = 1.65 x 10(exp 18) cm(exp -3), n = 1.5 x 10(exp 18) cm(exp -3)), almost half of the MQW stages were shown to be undepleted at low bias which was a result of a reduction in the electric field near the p(+) cap layer by over 50% from its value in the balanced structure. Experimental CV and IV data on similar MBE grown MQW structures have shown very similar depletion and breakdown characteristics. The models have enabled us to better interpret our experimental data and to determine both the extent of the doping imbalances in the devices as well as the overall p- or n-type doping characteristics of the structures.

Menkara, H. M.↗
DOE OSTI2021

Electrical, structural and thermomechanical properties of doped-LaCrO3 ceramics for high temperature electronics and sensing applications.

Many important electrical and sensor applications require stable conductors under working temperatures up to 1500oC various redox environments. Common high temperature conductors such as nitrides and carbides are not stable under oxidizing atmospheres, for this reason low redox behavior materials would be more attractive. In this work, further dopant studies of the LaCrO3 system were completed in order to control the electronic and ionic conductivity, as well as the relative chemical and microstructural stability. Neodymium and Niobium dopants were initially studied to control the p-type, and potentially n-type conductive mechanisms, respectively, but other dopants strategies were also investigated. The electrical conductivity and Seebeck coefficient were characterized up to 1500oC under varying oxygen partial pressures. The phase and microstructural evolution of each material was also investigated for these compositions by XRD and SEM. The materials showing the best electrical and thermomechanical performance were included within thick films sensors and were tested.

20 FOSSIL-FUELED POWER PLANTS↗
DOE OSTI2026

Electric field dependence of nanoscale cathodoluminescence inside Cr doped β-Ga 2 O 3 interfaces

Chromium (Cr) is a common impurity in β-Ga 2 O 3 crystals, where its characteristic R1 and R2 luminescence lines are susceptible to both the host crystal field and externally applied fields. Here, in this work, we demonstrate that the Cr cathodoluminescence (CL) quenches toward the bulk of the crystal but enhances with applied reverse bias, reflecting the effect of free carrier depletion with increasing electric field. Furthermore, we illustrate that the R1/R2 CL intensity ratio, measured as the integrated area ratio of R1 to R2, can be used as a direct probe of the electric field in a Ni-β-Ga 2 O 3 : Cr Schottky diode. This optical calibration method provides a complementary approach to conventional C–V and I–V measurements for determining electric field strength in the depletion region of β-Ga 2 O 3 -based Schottky diodes and can be extended to other semiconductors and multilayer device structures.

36 MATERIALS SCIENCE↗
NASA NTRS2005

N-Type delta Doping of High-Purity Silicon Imaging Arrays

A process for n-type (electron-donor) delta doping has shown promise as a means of modifying back-illuminated image detectors made from n-doped high-purity silicon to enable them to detect high-energy photons (ultraviolet and x-rays) and low-energy charged particles (electrons and ions). This process is applicable to imaging detectors of several types, including charge-coupled devices, hybrid devices, and complementary metal oxide/semiconductor detector arrays. Delta doping is so named because its density-vs.-depth characteristic is reminiscent of the Dirac delta function (impulse function): the dopant is highly concentrated in a very thin layer. Preferably, the dopant is concentrated in one or at most two atomic layers in a crystal plane and, therefore, delta doping is also known as atomic-plane doping. The use of doping to enable detection of high-energy photons and low-energy particles was reported in several prior NASA Tech Briefs articles. As described in more detail in those articles, the main benefit afforded by delta doping of a back-illuminated silicon detector is to eliminate a "dead" layer at the back surface of the silicon wherein high-energy photons and low-energy particles are absorbed without detection. An additional benefit is that the delta-doped layer can serve as a back-side electrical contact. Delta doping of p-type silicon detectors is well established. The development of the present process addresses concerns specific to the delta doping of high-purity silicon detectors, which are typically n-type. The present process involves relatively low temperatures, is fully compatible with other processes used to fabricate the detectors, and does not entail interruption of those processes. Indeed, this process can be the last stage in the fabrication of an imaging detector that has, in all other respects, already been fully processed, including metallized. This process includes molecular-beam epitaxy (MBE) for deposition of three layers, including metallization. The success of the process depends on accurate temperature control, surface treatment, growth of high-quality crystalline silicon, and precise control of thicknesses of layers. MBE affords the necessary nanometer- scale control of the placement of atoms for delta doping. More specifically, the process consists of MBE deposition of a thin silicon buffer layer, the n-type delta doping layer, and a thin silicon cap layer. The n dopant selected for initial experiments was antimony, but other n dopants as (phosphorus or arsenic) could be used. All n-type dopants in silicon tend to surface-segregate during growth, leading to a broadened dopant-concentration- versus-depth profile. In order to keep the profile as narrow as possible, the substrate temperature is held below 300 C during deposition of the silicon cap layer onto the antimony delta layer. The deposition of silicon includes a silicon- surface-preparation step, involving H-termination, that enables the growth of high-quality crystalline silicon at the relatively low temperature with close to full electrical activation of donors in the surface layer.

Blacksberg, Jordana↗
DOE OSTI2024

Electron irradiation effects on the optical properties of Hf- and Zn-doped β -Ga 2 O 3

Optical and electrical properties of Hf- and Zn-doped β-Ga 2 O 3 samples, which are n-type and insulating, respectively, were altered via high-energy electron irradiation at 2.5 or 0.5 MeV. The β-Ga 2 O 3 :Hf samples irradiated with 2.5 MeV electrons experienced a color change from blue to yellow and a large drop in conductivity, attributed to the creation of gallium vacancies, which compensate donors. This irradiation resulted in the absence of free carrier absorption and the presence of Cr 3+ photoluminescence (PL). PL mapping prior to irradiation revealed optically active ZnO precipitates that formed during the growth of β-Ga 2 O 3 :Zn. These precipitates have a 384 nm (3.23 eV) stacking fault emission in the core; in the outer shell of the precipitate, the PL blue-shifts to 377 nm (3.29 eV) and a broad defect band is observed. After 0.5 MeV electron irradiation, the defect band broadened and increased in intensity. The blue PL band (435 nm) of β-Ga 2 O 3 was enhanced for both Hf- and Zn-doped samples irradiated with 0.5 MeV. This enhancement is correlated with an increase in oxygen vacancies.

36 MATERIALS SCIENCE↗
NASA NTRS1984

Magnetron Sputtered Gold Contacts on N-gaas

Direct current planar magnetron sputtering was used to deposit gold Schottky barrier electrical contacts on n-type GaAs of varying doping densities. The electrical character of the contact was determined from current voltage and electron beam induced voltage data. Without reducing the surface concentration of carbon and oxide, the contacts were found to be rectifying. There is evidence that energetic neutral particles reflected from the magnetron target strike the GaAs and cause interfacial damage similar to that observed for ion sputtering. Particle irradiation of the surface during contact deposition is discussed.

Buonaquisti, A. D.↗