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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 73 records · Page 4
All sourcesNASA NTRSDOE OSTI
DOE OSTI2018

Effect of Cobalt on the Crystal Structure and Magnetism of Electron-Doped Sr{sub 0.8}Ce{sub 0.2}MnO{sub 3} Oxide

The Sr{sub 0.8}Ce{sub 0.2}Mn{sub 1 –} {sub y}Co{sub y}O{sub 3 – δ} (y = 0.2, 0.3, 0.4, 0.5, and 0.6) complex oxides with the perovskite structure obtained from simple oxides by the solid–state reaction technique have been examined using structural analysis and magnetic measurements. Substitution of Co for Mn in the dilute Sr{sub 0.8}Ce{sub 0.2}MnO{sub 3} antiferromagnet with a Néel temperature of T{sub N} = 210 K leads to a decrease in the degree of tetragonal distortion of the crystal structure and transition to the cubic cell. The degeneracy of the antiferromagnetic interaction (T{sub N} = 138 K at y = 0.2) observed at the first stage of the substitution of Co for Mn changes for its gradual enhancement with an increase in the magnetic transformation temperature up to 239 K at y = 0.6. An increase in the Co content weakens the competition between the ferromagnetic and antiferromagnetic couplings and reduces the temperature of the transition to the spin-glass-like state. The magnetic inhomogeneity and formation of Co{sup 2+}–Mn{sup 4+} ferromagnetic clusters in Sr{sub 0.8}Ce{sub 0.2}Mn{sub 0.4}Co{sub 0.6}O{sub 2.69} at 140 K have been observed.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

Quantum fluctuations lead to glassy electron dynamics in the good metal regime of electron doped KTaO 3

One of the central challenges in condensed matter physics is to comprehend systems that have strong disorder and strong interactions. In the strongly localized regime, their subtle competition leads to glassy electron dynamics which ceases to exist well before the insulator-to-metal transition is approached as a function of doping. Here, we report on the discovery of glassy electron dynamics deep inside the good metal regime of an electron-doped quantum paraelectric system: KTaO 3 . We reveal that upon excitation of electrons from defect states to the conduction band, the excess injected carriers in the conduction band relax in a stretched exponential manner with a large relaxation time, and the system evinces simple aging phenomena—a telltale sign of glassy dynamics. Most significantly, we observe a critical slowing down of carrier dynamics below 35 K, concomitant with the onset of quantum paraelectricity in the undoped KTaO 3 . Our combined investigation using second harmonic generation technique, density functional theory and phenomenological modeling demonstrates quantum fluctuation-stabilized soft polar modes as the impetus for the glassy behavior. This study addresses one of the most fundamental questions regarding the potential promotion of glassiness by quantum fluctuations and opens a route for exploring glassy dynamics of electrons in a well-delocalized regime.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2019

Momentum-resolved lattice dynamics of parent and electron-doped Sr2IrO4

The mixing of orbital and spin character in the wavefunctions of the 5d iridates has led to predictions of strong couplings between their lattice, electronic and magnetic degrees of freedom. As well as realising a novel spin-orbit assisted Mott-insulating ground state, the perovskite iridate Sr 2 IrO 4 has strong similarities with the cuprate La 2 CuO 4 , which on doping hosts a charge density wave that appears intimately connected to high-temperature superconductivity. These phenomena can be sensitively probed through momentum-resolved measurements of the lattice dynamics, made possible by meV-resolution inelastic x-ray scattering. Here we report the rst such measurements for both parent and electron-doped Sr2IrO4. We nd that the low-energy phonon dispersions and intensities in both compounds are well described by the same non-magnetic DFT calculation. In the parent compound, no changes of the phonons upon magnetic ordering are discernible within the experimental resolution, and in the doped compound no anomalies are apparent due to charge density waves. These measurements extend our knowledge of the lattice properties of (Sr 1-x La x ) 2 IrO 4 , and constrain the couplings of the phonons to magnetic and charge order.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Electronic and magnetic properties of electron-doped V 2 O 5 and NaV 2 O 5

Because of its narrow split-off conduction band, doping of V 2 O 5 leads to interesting strongly correlated electrons. We study the effects of doping on V 2 O 5 's electronic and magnetic properties, either by adding electrons compensated by an artificial homogeneous background, or a virtual crystal approximation (VCA), by changing the atomic number Z V , so as to keep charge neutrality, or by explicitly introducing Na as a dopant. The former two are considered as a way to simulate injected charge by gating, the latter occurs in the vanadium bronze NaV 2 O 5 . We also simulate Na 1 - x V 2 O 5 using a virtual crystal approximation by changing the atomic number 10 ≤ Z Na ≤ 11 . The differences in the band structure, which result from how the electrons added to the band are compensated by positive charge in the three models, are compared. The electronic band structures are calculated using the quasiparticle self-consistent Q S G W method including a lattice polarization correction and the local spin density functional method with Hubbard- U corrections (LSDA+ U ). For NaV 2 O 5 , the half-filling leads to a splitting of the up- and down-spin lowest d x y band. The spins are found to prefer an antiferromagnetic ordering along the chain direction. Other spin configurations are shown to have higher energy and the exchange interactions are extracted and compared with literature. The optical conductivities are calculated and compared with experiment. Similar results are found for simply doping the band compensated by a background or virtual crystal approximation. Yet, the position of the occupied bands depends on the method chosen for compensating the charge. The most realistic way to simulate gating in which the compensating charge is kept away from the V 2 O 5 layer is the VCA with varying Z Na . The splitting between the up- and down-spin bands depends on the filling. Furthermore, we find that below a certain concentration of about 0.88 electrons per V, the FM arrangement becomes preferable over the antiferromagnetic one. The magnetic moments then gradually decrease as we lower the filling of the split-off band.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2018

Beyond electrostatic modification: design and discovery of functional oxide phases via ionic-electronic doping

A new research field of functional materials and device physics is emerging that combines ionic transport with charge carrier modulation to realize emergent physical properties and discovery of metastable phases. The paradigm for enabling function extends far beyond carrier accumulation or depletion in band semiconductors or simply moving ions through an insulating electrolyte. Rather, by careful selection of electronically or structurally fragile materials, one can collapse or open band gaps via extreme ionic dopant concentration, or reconfigure their entire crystal structure to create new phases. Electron-electron and electron-lattice interactions can be coupled or controlled independently in such systems via electric fields without thermal constraints by use of ionic dopants. The unifying theme across these studies is to introduce ions and electrons via electric fields through interfaces with electrochemistry playing a dominant role. In this review, we briefly summarize this nascent field of iontronics and discuss principal results to date with examples from binary and complex oxides as well as selected 2D materials systems. Here, we conclude the review by highlighting gaps in fundamental scientific understanding and prospects for the use of such novel devices in future electronic, photonic and energy technologies.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Effects of electron doping level on minority carrier lifetimes in n -type mid-wave infrared InAs/InAs1−xSbx type-II superlattices

The minority carrier lifetime (τMC) and equilibrium electron concentration (i.e., the doping level, n0) are both important values that directly determine diffusion current in infrared photodetectors utilizing n-type absorbing regions. Here, time-resolved microwave reflectance measurements are used to non-destructively measure both of these values in mid-wave infrared InAs/InAs1−xSbx type-II superlattices with varying n-type doping levels between 2×1014 cm−3 and 2×1016 cm−3. The measured data are analyzed using carrier recombination theory to determine the doping level ranges where Shockley-Read-Hall (SRH), radiative, and Auger recombination limit τMC. The optimal doping level, which minimizes dark current, is experimentally determined and corresponds to the electron density at which τMC switches from SRH limited to Auger limited behavior. A comparison of two InAs/InAs1−xSbx photodetectors of different equilibrium electron densities demonstrates a decrease in dark current for a doping level near the optimal n0τMC product.

Kadlec, E. A.↗
DOE OSTI2022

Prediction of orbital-selective Mott phases and block magnetic states in the quasi-one-dimensional iron chain Ce 2 O 2 FeSe 2 under hole and electron doping

The recent detailed study of quasi-one-dimensional iron-based ladders, with the 3d iron electronic density n=6, has unveiled surprises, such as orbital-selective phases. However, similar studies for n=6 iron chains are still rare. Here a three-orbital electronic Hubbard model was constructed to study the magnetic and electronic properties of the quasi-one-dimensional n=6 iron chain Ce 2 O 2 FeSe 2 , with focus on the effect of doping. Specifically, introducing the Hubbard U and Hund J H couplings and studying the model via the density matrix renormalization group, we report the ground-state phase diagram varying the electronic density away from n=6. For the realistic Hund coupling J H /U=1/4, several electronic phases were obtained, including a metal, orbital-selective Mott, and Mott insulating phases. Doping away from the parent phase, the competition of many tendencies leads to a variety of magnetic states, such as ferromagnetism, as well as several antiferromagnetic and magnetic “block” phases. In the hole-doping region, two different interesting orbital-selective Mott phases were found: OSMP1 (with one localized orbital and two itinerant orbitals) and OSMP2 (with two localized orbitals and one itinerant orbital). Moreover, charge disproportionation phenomena were found in special doping regions. We argue that our predictions can be tested by simple modifications in the original chemical formula of Ce 2 O 2 FeSe 2 .

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2016

Electron doping evolution of the neutron spin resonance in NaFe 1-x Co x As

Neutron spin resonance, a collective magnetic excitation coupled to superconductivity, is one of the most prominent features shared by a broad family of unconventional superconductors including copper oxides, iron pnictides, and heavy fermions. In this paper, we study the doping evolution of the resonances in NaFe 1–x Co x As covering the entire superconducting dome. For the underdoped compositions, two resonance modes coexist. As doping increases, the low-energy resonance gradually loses its spectral weight to the high-energy one but remains at the same energy. By contrast, in the overdoped regime we only find one single resonance, which acquires a broader width in both energy and momentum but retains approximately the same peak position even when T c drops by nearly a half compared to optimal doping. Furthermore, these results suggest that the energy of the resonance in electron overdoped NaFe 1–x Co x As is neither simply proportional to T c nor the superconducting gap but is controlled by the multiorbital character of the system and doped impurity scattering effect.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2026

Electron-doping-induced destabilization of the dimerized insulating state in monolayer IrTe 2

The ability to tune the electronic phases of two-dimensional (2D) materials through external perturbations provides a powerful route to engineer functional nanoscale systems. In particular, the ground state of monolayer (ML) 1T-IrTe 2 is highly sensitive to the interplay between local chemical bonding and global electronic topology, leading to a unique 2 × 1 dimerized insulating phase. Here, we present an angle-resolved photoemission study on the evolution of the electronic structure in ML IrTe 2 induced by in situ Rb adsorption. We find that Rb adsorption suppresses the 2 × 1 dimerized phase in ML IrTe 2 , inducing a clear insulator-to-metal transition. This transition is characterized by a reconstruction of the band topology toward a bilayer-like metallic configuration. Combined with first-principles calculations, our results demonstrate that the collapse of the insulating state originates from Ir valence change and suppression of Fermi surface nesting-driven instabilities. Our findings establish ML IrTe 2 as a model system for investigating instability-driven phase control in 2D materials and highlight its potential for tunable electronic applications.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2016

Electronic doping of transition metal oxide perovskites

CaFeO{sub 3} is a prototypical negative charge transfer oxide that undergoes electronic metal-insulator transition concomitant with a dilation and contraction of nearly rigid octahedra. Altering the charge neutrality of the bulk system destroys the electronic transition, while the structure is significantly modified at high charge content. Using density functional theory simulations, we predict an alternative avenue to modulate the structure and the electronic transition in CaFeO{sub 3}. Charge distribution can be modulated using strain-rotation coupling and thin film engineering strategies, proposing themselves as a promising avenue for fine tuning electronic features in transition metal-oxide perovskites.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2021

Many-Body Exciton and Intervalley Correlations in Heavily Electron-Doped WSe 2 Monolayers

We shoe that in monolayer transition-metal dichalcogenide semiconductors, many-body correlations can manifest in optical spectra when electron-hole pairs (excitons) are photoexcited into a 2D Fermi sea of mobile carriers. At low carrier densities, the formation of charged excitons (X ± ) is well documented. However, in WSe 2 monolayers, an additional absorption resonance, often called X -' , emerges at high electron density. Its origin is not understood. Here, we investigate the X -' state via polarized absorption spectroscopy of gated WSe 2 monolayers in magnetic fields to 60T. Field-induced filling and emptying of the lowest optically active Landau level in the K ' valley causes repeated quenching of the corresponding optical absorption. Surprisingly, these quenchings are accompanied by absorption changes to higher Landau levels in both K ' and K valleys, which are unoccupied. These results cannot be reconciled within a single-particle picture, and demonstrate the many-body nature and intervalley correlations of the X -' quasiparticle state.

2D materials↗