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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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64 records · Page 4
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

Time-variable Radio Recombination Line Emission in W49A

We present new Jansky Very Large Array (VLA) images of the central region of the W49A star-forming region at 3.6 cm and at 7 mm at resolutions of 0.″15 (1650 au) and 0.″04 (440 au), respectively. The 3.6 cm data reveal new morphological detail in the ultracompact H ii region population, as well as several previously unknown and unresolved sources. In particular, source A shows elongated, edge-brightened bipolar lobes, indicative of a collimated outflow, and source E is resolved into three spherical components. We also present VLA observations of radio recombination lines at 3.6 cm and 7 mm, and IRAM Northern Extended Millimeter Array (NOEMA) observations at 1.2 mm. Three of the smallest ultracompact H ii regions (sources A, B2, and G2) all show broad kinematic linewidths, with ΔV {sub FWHM} ≳ 40 km s{sup −1}. A multi-line analysis indicates that broad linewidths remain after correcting for pressure broadening effects, suggesting the presence of supersonic flows. Substantial changes in linewidth over the 21 yr time baseline at both 3.6 cm and 7 mm are found for source G2. At 3.6 cm, the linewidth of G2 changed from 31.7 ± 1.8 km s{sup −1} to 55.6 ± 2.7 km s{sup −1}, an increase of +23.9 ± 3.4 km s{sup −1}. The G2 source was previously reported to have shown a 3.6 cm continuum flux density decrease of 40% between 1994 and 2015. This source sits near the center of a very young bipolar outflow whose variability may have produced these changes.

79 ASTRONOMY AND ASTROPHYSICS↗
DOE OSTI2021

High-power narrow spectrum GaSb-based DBR lasers emitting near 2.1 µm

Stable high-power narrow-linewidth operation of the 2.05–2.1 µm GaSb-based diode lasers was achieved by utilizing the sixth-order surface-etched distributed Bragg reflector (DBR) mirrors. The DBR multimode devices with 100 µm wide ridge waveguides generated ~850 mW in the continuous wave (CW) regime at 20°C. The device CW output power was limited by thermal rollover. The laser emission spectrum was defined by Bragg reflector reflectivity at all operating currents in a wide temperature range. Finally, the devices operated at DBR line with detuning from gain peak exceeding 10 meV.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2020

Accretion Properties of PDS 70b with MUSE

We report a new evaluation of the accretion properties of PDS 70b obtained with the Very Large Telescope/Multi Unit Spectroscopic Explorer. The main difference from the previous studies of Haffert et al. and Aoyama & Ikoma is in the mass accretion rate. Simultaneous multiple line observations, such as Hα and Hβ, can better constrain the physical properties of an accreting planet. While we clearly detected Hα emissions from PDS 70b, no Hβ emissions were detected. We estimate the line flux of Hβ with a 3σ upper limit to be 2.3 × 10{sup −16} erg s{sup −1} cm{sup −2}. The flux ratio F {sub Hβ}/F {sub Hα} for PDS 70b is <0.28. Numerical investigations by Aoyama et al. suggest that F {sub Hβ}/F {sub Hα} should be close to unity if the extinction is negligible. We attribute the reduction of the flux ratio to the extinction, and estimate the extinction of Hα (A {sub Hα}) for PDS 70b to be >2.0 mag using the interstellar extinction value. By combining with the Hα linewidth and the dereddening line luminosity of Hα, we derive the PDS 70b mass accretion rate to be ≳5 × 10{sup −7} M {sub Jup} yr{sup −1}. The PDS 70b mass accretion rate is an order of magnitude larger than that of PDS 70. We found that the filling factor f {sub f} (the fractional area of the planetary surface emitting Hα) is ≳0.01, which is similar to the typical stellar value. The small value of f {sub f} indicates that the Hα emitting areas are localized at the surface of PDS 70b.

79 ASTRONOMY AND ASTROPHYSICS↗
DOE OSTI2021

High-resolution spectroscopy of neutral Yb atoms in a solid Ne matrix

Here, we present an experimental and theoretical study of the absorption and emission spectra of Yb atoms in a solid Ne matrix at a resolution of 0.025 nm. Five absorption bands were identified as due to transitions from the 4 f 14 5 d 0 6 s 2 1 S 0 ground-state configuration to 4 f 14 5 d 0 6 s 6 p and 4 f 13 5 d 1 6 s 2 configurations. The two lowest-energy bands were assigned to outer-shell transitions to 6 s 6 p 3 P 1 and 1 P 1 atomic states and displayed the structure of a broad doublet and an asymmetric triplet, respectively. The remaining three higher-frequency bands were assigned to inner-shell transitions to distinct J = 1 states arising from the 4 f 13 5 d 1 6 s 2 configuration and were highly structured with narrow linewidths. A classical simulation was performed to identify the stability and symmetry of possible trapping sites in the Ne crystal. It showed that the overarching 1 + 2 structure of the high-frequency bands could be predominantly ascribed to crystal-field splitting in the axial field of a 10-atom vacancy of C 4 v symmetry. Their prominent substructures were shown to be manifestations of phonon sidebands associated with the zero-phonon lines on each crystal-field state. Unprecedented for a metal–rare-gas system, resolution of individual phonon states on an allowed electronic transition was possible under excitation spectroscopy which reflects the semiquantum nature of solid Ne. In contrast to the absorption spectra, emission spectra produced by steady-state excitation into the 1 P 1 absorption band consisted of simple, unstructured fluorescence bands.

74 ATOMIC AND MOLECULAR PHYSICS↗
DOE OSTI2022

Raman gain control in optical fibers with orbital-angular-momentum-induced chirality of light

Stimulated Raman scattering is a particularly robust nonlinearity, occurring in virtually every material because its spectral linewidth and associated frequency shift do not typically depend on phases or directions (i.e. wavevectors) of the interacting light beams. In amorphous materials such as glass fibers, Raman bandwidths are large, enabling its use as a broadband gain element. This ubiquity makes it a versatile means for achieving optical amplification or realizing lasers over a large range of pulsewidths at user-defined colors. However, this ease of deploying the effect also presents itself as a stubborn source of noise in fiber-based quantum sources or parasitic emission in fiber lasers. Here, we show that orbital angular momentum carrying light beams experiencing spin-orbit interactions yield novel phase-matching criteria for Raman scattering. This enables tailoring its spectral shape (by over half the Raman shift in a given material) as well as strength (by ∼ 100×) simply by controlling light’s topological charge – a capability of utility across the multitude of applications where modulating Raman scattering is desired.

Liu, Xiao (ORCID:000000032239762X)↗
DOE OSTI2020

Epitaxial Er-doped Y 2 O 3 on silicon for quantum coherent devices

Rare-earth ions have incomplete 4f shells and possess narrow optical intra-4f transitions due to shielding from electrons in the 5s and 5p orbitals, making them good candidates for solid-state optical quantum memory. The emission of Er 3+ in the telecom C-band (1530 nm – 1565 nm) makes it especially attractive for this application. In order to build practical, scalable devices, the REI needs to be embedded in a non-interacting host material, preferably one that can be integrated with silicon. In this paper, we show that Er 3+ can be isovalently incorporated into epitaxial Y 2 O 3 thin films on Si (111). We report on the synthesis of epitaxial, single-crystalline Er:Y 2 O 3 on Si with a narrow inhomogeneous linewidth in the photoluminescence spectra, 5.1 GHz (<100 mK) and an optical excited state lifetime of 8.1 ms. The choice of Y 2 O 3 was driven by its low nuclear spin and small lattice mismatch with Si. Using photoluminescence (PL) and electron paramagnetic resonance, we show that Er 3+ substitutes for Y in the crystal lattice. The role of interfacial SiO x , diffusion of silicon into the film, and the effect of buffer layers on inhomogeneous PL linewidth are examined. We also find that the linewidth decreased monotonically with film thickness but surprisingly exhibits no correlation with the film crystalline quality as measured by the x-ray rocking curve scans suggesting other factors at play that limit the inhomogeneous broadening in Y 2 O 3 films.

36 MATERIALS SCIENCE↗
DOE OSTI2024

The Nonradiative Properties of Self–Trapped Holes in Ultra–Wide Bandgap Gallium Oxide Film

The photoluminescence (PL) of self-trapped holes (STH) in ultra-wide bandgap β-Ga 2 O 3 is commonly its most dominant light emission and is an inherent property. Thus, gaining knowledge of the crystal dynamics that impact the PL properties is vital to sensor and other technologies. The PL, Raman-phonons, and their interactions are studied at an extreme temperature range of 77–622 K. The PL is studied up to the bandgap value of ≈5 eV. It is found that the high-energy Raman modes provide a major route to the nonradiative process of the PL via STH–phonon interaction with an activation energy of 72 meV. This dynamic is modeled with the configurational coordinate scheme at the strong phonon coupling limit. The exceptionally broad Gaussian PL linewidth manifests this coupling. The weak temperature response of the PL energy peak position indicates that the STH has characteristics of a deep-level defect. This contrasts with the large redshift of ≈220 meV of the optical gap of the film, ascertained from transmission. Unlike the temperature response of the high-energy phonons, the behavior of the low-energy phonons is found to follow the Bose–Einstein population increase, indicating no strong interaction with the STH.

Raman↗
DOE OSTI2025

Ultranarrow electroluminescence from magnetic excitons in the van der Waals antiferromagnetic semiconductor NiPS 3

Electrically driven light emission from two-dimensional (2D) semiconducting materials has enabled numerous optoelectronic technologies, including light-emitting diodes, solid-state lasers, and single-photon sources for quantum communication. Here we report ultranarrow electroluminescence from the magnetic excitonic state of the van der Waals antiferromagnetic semiconductor NiPS 3 . This electroluminescence is enabled by the fabrication of gate-tunable NiPS 3 devices that remain electrically conductive below the antiferromagnetic ordering temperature of 155 K, ultimately allowing field-effect mobilities of 1.3 cm 2 V –1 s –1 and 4.5 cm 2 V –1 s –1 to be directly measured at room temperature and 7 K, respectively. By applying a high-frequency square wave voltage to the gate electrode of the resulting field-effect transistors, electroluminescence is capacitively induced from the magnetic excitons of NiPS 3 . Due to the coupling of these excitons with the underlying NiPS 3 antiferromagnetic order, the electroluminescence has an ultranarrow linewidth of 1 meV and a high degree of linear polarization (ρ = 0.78). In addition to facilitating fundamental studies of the coupling between spin states and excitons in van der Waals magnetic semiconductors, this work will accelerate the development of emerging 2D opto-spintronic applications.

two-dimensional materials↗
DOE OSTI2021

Charge collection and trapping mechanisms in hexagonal boron nitride epilayers

Understanding charge collection and trapping mechanisms is crucial for using hexagonal boron nitride (h-BN) as active layers for many photonic and electronic devices such as deep UV detectors and emitters, neutron detectors, and single photon emitters. Charge collection and trapping mechanisms in h-BN epilayers have been investigated by probing impurity related optical emissions under an applied electrical field. Our results suggested that the existence of oxygen impurities affects the charge collection efficiency and results in an additional emission peak at 3.75 eV, corresponding to a donor-acceptor pair (DAP) recombination involving O N (oxygen residing on the nitrogen site) donors and the V B -H (boron vacancy bonded with hydrogen complex) deep level acceptors. Experimental results further revealed that the applied electric field induces an anti-correlation between the emission intensity of the DAP transition and the charge collection efficiency from which it was shown that it is possible to find an expression to quantitatively measure the maximum charge collection efficiency in h-BN. The results introduce not only a coherent picture for the relationship between common impurities in h-BN and charge collection and trapping mechanisms but also useful insights into possible approaches to improve the quality, purity, and charge collection of the h-BN epilayers.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2025

Impact of external screening on the valence and core level photoelectron spectra of monolayer W⁢S 2

Transition metal dichalcogenides (TMDs) represent an emerging class of layered materials with applications in microelectronics, optoelectronics, photonics, and catalysis. The confinement of charge carriers within the highly anisotropic, quasi-two-dimensional geometry of one-layer (1L) TMDs leads to reduced, variable dielectric screening, giving rise to a quasiparticle band gap that is highly susceptible to the surrounding dielectric environment. Here, exploiting the contrasting external dielectric environments of gold-supported and suspended 1L W⁢S 2 , we show how the electronic states of W⁢S 2 under the effective and ineffective screening environments align at a junction made within the same sheet of material. Photoelectron spectra point to the close alignment of the charge neutrality levels of W⁢S 2 in both environments, and the breakdown of rigid shifts between the valence states and core levels with the core levels shifting more than twice as much as the valence states. Furthermore, the effectively screened W⁢S 2 exhibits a valence state with the photoemission linewidth twice as large as the ineffectively screened suspended W⁢S 2 , presumably originated from the locally varying W⁢S 2 -Au distance and substrate disorders. Collectively, these findings provide key insights into the electronic behavior of W⁢S 2 and its photoemission process with the electronic states renormalized according to the external screening environments.

Dielectric properties↗