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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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57 records · Page 4

Project Final Report - Advanced Oxygen Separation from Air Using a Novel Mixed Matrix Membrane

This report describes a summary of the findings of the project. The technical work was divided into three activities: 1) technoeconomic analysis; 2) membrane component development (support layer, selective layer development, and gutter layer formulation); and 3) hollow fiber formation. The technoeconomic analysis includes operating, capital, and materials costs of an oxygen enrichment system with 1-3 stages. The analysis concluded that the desired gas quality (90-95% O2) cannot be reached with a single stage. The triple stage system yielded the best overall product quality at lower membrane performance levels but with the highest cost. For the membrane development activities, functionalized nanodiamonds have been shown to slightly improve membrane formation behaviors and gas permeability performance. For example, support layers based on polysulfone-nanodiamond composites have been formed that increase the material’s O2 permeability by over a factor of 150, however, at the cost of selectivity that suggests a change in transport mechanism. Furthermore, nanodiamonds have been found to improve membrane durability. Improvements in selective and gutter layers also have been accomplished. An additional accomplishment is the demonstration of phase inversion of polysulfone-nanodiamond composites that ensures that hollow fiber formation can be performed. Finally, the interfaces between support, gutter, and selective layers were briefly examined and the resulting membrane material consisting of all three layers gave good performance in an O2 separation from N2. The three-layer prototype membrane gave permeability of 29.2-32.2 Barrers, which equates to permeance of approximately 290-320 GPU, which is lower than the TEA informed goal of 500 GPU. O2/N2 selectivity ranged from 5.2-6.2, which is consistent with the less costly two-stage implementation of the technology. In summary, new materials have been developed for O2 concentration from air and are well-suited to a hollow fiber format.

20 FOSSIL-FUELED POWER PLANTS↗

Effects of Cooling Rates on Self-Reinforced Polyethylene Composites via Multiscale Experimental Characterizations

This study investigates cooling rate effects on self-reinforced polyethylene composites (PE-SRCs), focusing on macroscopic thermal and mechanical properties, and micro- to sub-micron morphologies. Unlike conventional fiber-reinforced composites (e.g., carbon and glass fiber based), cooling rate effects on SRCs remain less studied. PE-SRCs were fabricated from ultrahigh molecular weight polyethylene (UHMWPE) fabric and high-density polyethylene (HDPE) matrix with cooling rates from 0.76°C/min to 425°C/min. Tensile properties, including modulus (~9.5 GPa), strength (~360 MPa), and ultimate elongation (~6%), showed no significant cooling rate dependence. However, thermal analysis revealed melting temperature of HDPE matrix decreased from ~130°C to ~126.5°C with total crystallinity reducing from 84% to 75%. Wide-angle X-ray scattering confirmed decreasing crystallinity but at lower values (67%–59%), as thermal analysis might overestimate crystallinity. Small-angle X-ray scattering showed long period decreased from 24.3 to 17.4 nm, attributed to thinner lamellae and closer packing, suggesting limited crystal growth and faster nucleation. While cooling rates alter melting point and crystalline structures of HDPE matrix, these changes do not translate to substantial impact on macroscale mechanical properties of PE-SRCs. This insensitivity might be related to low interfacial shear strength at PE/PE interfaces, enabling process optimization while maintaining mechanical performance.

Cooling rate↗

Performance of Scintillation Detectors Based on Quantum Dots in a Semiconductor Matrix (Final Technical Report)

InAs Quantum Dots (QDs) embedded into GaAs semiconductor waveguide have unique scintillation properties, valuable for nuclear security, medical imaging, and high energy physics. In this work, we developed thick (~25um) epitaxial heterostructres with high luminescence efficiency composed of self-assembled nano-engineered InAs QDs grown by molecular beam epitaxy. In this type of detector, the GaAs matrix acts as a stopping material for charged particles or photons generating electrons captured by the QDs acting as luminescence centers. The QD medium is designed to provide fast capture of electrons into QDs (few ps), high QD luminescence efficiency at room temperature (>50%), and strong red-shift of photoluminescence (PL) from the GaAs absorption edge (>250nm). Typical devices consist of a 10-25um thick GaAs layer with embedded sheets of modulation p-type doped InAs QDs and an InGaAs photodetector tuned to the QD emission wavelength. The thick GaAs layer acts also as a waveguide when layer-transferred onto a low-index substrate. Waveguiding and self-absorption (~1cm -1 ) were studied using photoluminescence with scanning laser excitation and modeled with ray optics approximation and geometrical coupling of high-index waveguide to a collection fiber. Scintillating signals from α-particles were analyzed with both an external photodiode (PD) and an integrated PD which provided an improved optical coupling. In the former case, the external InGaAs PD was air-coupled to the scintillator and had the light collection efficiency of about 1% corresponding to limited light extraction through a planar interface with air due to total internal reflection. The mean charge collected by the integrated PD was in the range of (3÷5)×10 4 photoelectrons per 1 MeV of deposited energy, or ~13-20% of the theoretically achievable light yield. Timing of the integrated device was measured by wire-bonding it to the input of an 8 GHz IC. The scintillation response shows an extremely fast 0.3-0.6 ns decay constant and about 40-70 ps time resolution, limited by the system noise. The combined light yield and decay time makes the InAs/GaAs QD heterostructures the fastest high yield scintillation material reported making it valuable for high energy physics and medical imaging applications.

77 NANOSCIENCE AND NANOTECHNOLOGY↗