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The smooth transition from field emission to a self-sustained plasma in microscale electrode gaps at atmospheric pressure
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Thermionic field emission in GaN nanoFET Schottky barriers
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Chemical Vapor-Deposited (CVD) Diamond Films for Electronic Applications
Diamond films have a variety of useful applications as electron emitters in devices such as magnetrons, electron multipliers, displays, and sensors. Secondary electron emission is the effect in which electrons are emitted from the near surface of a material because of energetic incident electrons. The total secondary yield coefficient, which is the ratio of the number of secondary electrons to the number of incident electrons, generally ranges from 2 to 4 for most materials used in such applications. It was discovered recently at the NASA Lewis Research Center that chemical vapor-deposited (CVD) diamond films have very high secondary electron yields, particularly when they are coated with thin layers of CsI. For CsI-coated diamond films, the total secondary yield coefficient can exceed 60. In addition, diamond films exhibit field emission at fields orders of magnitude lower than for existing state-of-the-art emitters. Present state-of-the-art microfabricated field emitters generally require applied fields above 5x10^7 V/cm. Research on field emission from CVD diamond and high-pressure, high-temperature diamond has shown that field emission can be obtained at fields as low as 2x10^4 V/cm. It has also been shown that thin layers of metals, such as gold, and of alkali halides, such as CsI, can significantly increase field emission and stability. Emitters with nanometer-scale lithography will be able to obtain high-current densities with voltages on the order of only 10 to 15 V.
Group-III Nitride Field Emitters
Field-emission devices (cold cathodes) having low electron affinities can be fabricated through lattice-mismatched epitaxial growth of nitrides of elements from group III of the periodic table. Field emission of electrons from solid surfaces is typically utilized in vacuum microelectronic devices, including some display devices. The present field-emission devices and the method of fabricating them were developed to satisfy needs to reduce the cost of fabricating field emitters, make them compatible with established techniques for deposition of and on silicon, and enable monolithic integration of field emitters with silicon-based driving circuitry. In fabricating a device of this type, one deposits a nitride of one or more group-III elements on a substrate of (111) silicon or other suitable material. One example of a suitable deposition process is chemical vapor deposition in a reactor that contains plasma generated by use of electron cyclotron resonance. Under properly chosen growth conditions, the large mismatch between the crystal lattices of the substrate and the nitride causes strains to accumulate in the growing nitride film, such that the associated stresses cause the film to crack. The cracks lie in planes parallel to the direction of growth, so that the growing nitride film becomes divided into microscopic growing single-crystal columns. The outer ends of the fully-grown columns can serve as field-emission tips. By virtue of their chemical compositions and crystalline structures, the columns have low work functions and high electrical conductivities, both of which are desirable for field emission of electrons. From examination of transmission electron micrographs of a prototype device, the average column width was determined to be about 100 nm and the sharpness of the tips was determined to be characterized by a dimension somewhat less than 100 nm. The areal density of the columns was found to about 5 x 10(exp 9)/sq cm . about 4 to 5 orders of magnitude greater than the areal density of tips in prior field-emission devices. The electric field necessary to turn on the emission current and the current per tip in this device are both lower than in prior field-emission devices, such that it becomes possible to achieve longer operational lifetime. Moreover, notwithstanding the lower current per tip, because of the greater areal density of tips, it becomes possible to achieve greater current density averaged over the cathode area. The thickness of the grown nitride film (equivalently, the length of the columns) could lie between about 0.5 microns and a few microns; in any event, a thickness of about 1 micron is sufficient and costs less than do greater thicknesses. It may be possible to grow nitride emitter columns on glass or other substrate materials that cost less than silicon does. What is important in the choice of substrate material is the difference between the substrate and nitride crystalline structures. Inasmuch as the deposition process is nondestructive, an ability to grow emitter columns on a variety of materials would be advantageous in that it would facilitate the integration of field-emitter structures onto previously processed integrated circuits.
Energy exchanges attending field electron emission.
Energy exchange localization to cathode emitting area during field electron emission, noting dependence on temperature, work function and applied field
FEASIBILITY OF APPLYING FIELD-ION EMISSION TO ELECTROSTATIC ROCKET ENGINES
Application of field-ion emission to electrostatic rocket engines - ionization lifetimes of hydrogen, lithium, sodium, rubidium, cesium, and xenon
Evaluation of Niobium as Candidate Electrode Material for DC High Voltage Photoelectron Guns
The field emission characteristics of niobium electrodes were compared to those of stainless steel electrodes using a DC high voltage field emission test apparatus. A total of eight electrodes were evaluated: two 304 stainless steel electrodes polished to mirror-like finish with diamond grit and six niobium electrodes (two single-crystal, two large-grain, and two fine-grain) that were chemically polished using a buffered-chemical acid solution. Upon the first application of high voltage, the best large-grain and single-crystal niobium electrodes performed better than the best stainless steel electrodes, exhibiting less field emission at comparable voltage and field strength. In all cases, field emission from electrodes (stainless steel and/or niobium) could be significantly reduced and sometimes completely eliminated, by introducing krypton gas into the vacuum chamber while the electrode was biased at high voltage. Of all the electrodes tested, a large-grain niobium electrode performed the best, exhibiting no measurable field emission (< 10 pA) at 225 kV with 20 mm cathode/anode gap, corresponding to a field strength of 18:7 MV/m.
Development program on a Spindt cold-cathode electron gun
A thin film field emission cathode (TFFEC) array and a cold cathode electron gun based on the emitter were developed. A microwave tube gun that uses the thin film field emission cathode as an electron source is produced. State-of-the-art cathodes were fabricated and tested. The tip-packing density of the arrays were increased thereby increasing the cathode's current density capability. The TFFEC is based on the well known field emission effect and was conceived to exploit the advantages of that phenomenon while minimizing the difficulties associated with conventional field emission structures, e.g. limited life and high voltage requirements. Field emission follows the Fowler-Nordheim equation.
Bremsstrahlung radiation in an intense magnetic field and emission from pulsars
Bremsstrahlung radiation in intense magnetic field proposed as emission mechanism from pulsars, discussing absorption coefficient
Noise and current-voltage characterization of complementary heterojunction field-effect transistor (CHFET) structures below 8 K
Noise and current-voltage characterization of complementary heterojunction field-effect transistor (CHFET) structures below 8 K are presented. It is shown that the CHFET exhibits normal transistor operation down to 6 K. Some of the details of the transistor operation, such as the gate-voltage dependence of the channel potential, are analyzed. The gate current is examined and is shown to be due to several mechanisms acting in parallel. These include field-emission and thermionic-field-emission, conduction through a temperature-activated resistance, and thermionic emission. The input referred noise for n-channel CHFETs is presented and discussed. The noise has the spectral dependence of 1/f noise, but does not exhibit the usual area dependence.
Ultra small electron beam amplifiers
Data on field emission and microfabrication technologies relevant to the development of low-power electron-beam amplifiers and oscillators are discussed. The fabrication of a thin-film field-emission (TFFE) cathode for a 1-W electron-beam amplifier is examined. Some TFFE cathodes have been developed and tested in electron guns. Recent experimental results reveal that a beam can be formed from the field-emission cathode, and the TFFE cathode is applicable for devices operating below 3 kV at currents of less than 20 mA. The use of microfabrication techniques to construct slow-wave circuits is studied, and the use of finned structures as the slow-wave circuit for an electron-beam oscillator or amplifier is proposed.
Arrays of Bundles of Carbon Nanotubes as Field Emitters
Experiments have shown that with suitable choices of critical dimensions, planar arrays of bundles of carbon nanotubes (see figure) can serve as high-current-density field emitter (cold-cathode) electron sources. Whereas some hot-cathode electron sources must be operated at supply potentials of thousands of volts, these cold-cathode sources generate comparable current densities when operated at tens of volts. Consequently, arrays of bundles of carbon nanotubes might prove useful as cold-cathode sources in miniature, lightweight electron-beam devices (e.g., nanoklystrons) soon to be developed. Prior to the experiments, all reported efforts to develop carbon-nanotube-based field-emission sources had yielded low current densities from a few hundred microamperes to a few hundred milliamperes per square centimeter. An electrostatic screening effect, in which taller nanotubes screen the shorter ones from participating in field emission, was conjectured to be what restricts the emission of electrons to such low levels. It was further conjectured that the screening effect could be reduced and thus emission levels increased by increasing the spacing between nanotubes to at least by a factor of one to two times the height of the nanotubes. While this change might increase the emission from individual nanotubes, it would decrease the number of nanotubes per unit area and thereby reduce the total possible emission current. Therefore, to maximize the area-averaged current density, it would be necessary to find an optimum combination of nanotube spacing and nanotube height. The present concept of using an array of bundles of nanotubes arises partly from the concept of optimizing the spacing and height of field emitters. It also arises partly from the idea that single nanotubes may have short lifetimes as field emitters, whereas bundles of nanotubes could afford redundancy so that the loss of a single nanotube would not significantly reduce the overall field emission.
Wiring design for the control of electromagnetic interference (EMI)
Wiring design is only one important aspect of EMI control. Other important areas for EMI are: circuit design, filtering, grounding, bonding, shielding, lighting, electrostatic discharge (ESD), transient suppression, and electromagnetic pulse (EMP). Topics covered include: wire magnetic field emissions at low frequencies; wire radiated magnetic field emissions at frequencies; wire design guidelines for EMI control; wire design guidelines for EMI control; high frequency emissions from cables; and pulse frequency spectra.
Evaluation of volcano-style field ionization source and field emitting cathodes for mass spectrometry and applications
A volcano-style field ionization source was tested with eight different gases: hydrogen, helium, ammonia, methane, argon, neon, water vapor, and hydrogen sulfide. For ammonia, hydrogen sulfide, and water, the ionization efficiency of the field ionization source was determined as a function of the electrical potential difference between the ionizer and its counterelectrode. The ionization efficiencies for the other gases were too low to be measured in the present apparatus. The operating characteristics of a field emission cathode, were studied, in the presence of the same eight gases at pressures up to 0.00001 torr. The presence of the gases caused little or no significant change in the electron emission from the cathodes. Results indicate that the field emission cathode has advantages over electrically heated cathodes as a source of an electron beam in spacecraft mass spectrometers.
Nanoscale Mineralogy and Composition of Experimental Regolith Agglutinates Produced under Asteroidal Impact Conditions
On the Moon, the energetics of smaller impactors and the physical/chemical characteristics of the granular regolith target combine to form a key product of lunar space weathering: chemically reduced shock melts containing optically-active nanophase Fe metal grains (npFe0) [1]. In addition to forming the optically dark glassy matrix phase in lunar agglutinitic soil particles [1], these shock melts are becoming increasingly recognized for their contribution to optically active patina coatings on a wide range of exposed rock and grain surfaces in the lunar regolith [2]. In applying the lessons of lunar space weathering to asteroids, the potential similarities and differences in regolith-hosted shock melts on the Moon compared to those on asteroids has become a topic of increasing interest [3,4]. In a series of impact experiments performed at velocities applicable to the asteroid belt [5], Horz et al. [6] and See and Horz [7] have previously shown that repeated impacts into a gabbroic regolith analog target can produce melt-welded grain aggregates morphologically very similar to lunar agglutinates [6,7]. Although these agglutinate-like particles were extensively analyzed by electron microprobe and scanning electron microscopy (SEM) as part of the original study [7], a microstructural and compositional comparison of these aggregates to lunar soil agglutinates at sub-micron scales has yet to be made. To close this gap, we characterized a representative set of these aggregates using a JEOL 7600 field-emission scanning electron microscope (FE-SEM), and JEOL 2500SE field-emission scanning transmission electron microscope (FE-STEM) both optimized for energy dispersive X-ray spectroscopy (EDX) compositional spectrum imaging at respective analytical spatial resolutions of 0.5 to 1 micron, and 2 to 4 nm.