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At least 73 records · Page 4

Analytical and numerical studies of the thermocapillary flow in a uniformly floating zone

The microgravity environment of an orbiting vehicle permits crystal growth experiments in the presence of greatly reduced buoyant convection in the liquid melt. Crystals grown in ground-based laboratories do not achieve their potential properties because of dopant variations caused by flow in the melt. The floating zone crystal growing system is widely used to produce crystals of silicon and other materials. However, in this system the temperature gradient on the free sidewall surface of the melt is the source of a thermocapillary flow which does not disappear in the low-gravity environment. The idea of using a uniform rotation of the floating zone system to confine the thermocapillary flow to the melt sidewall leaving the interior of the melt passive is examined. A cylinder of fluid with an axial temperature gradient imposed on the cylindrical sidewall is considered. A half zone and the linearized, axisymmetric flow in the absence of crystal growth is examined. Rotation is found to confine the linear thermocapillary flow. A simplified model is extended to a full zone and both linear and nonlinear thermocapillary flows are studied theoretically. Analytical and numerical methods are used for the linear flows and numerical methods for the nonlinear flows. It was found that the linear flows in the full zone have more complicated and thicker boundary layer structures than in the half zone, and that these flows are also confined by the rotation. However, for the simplified model considered and for realistic values for silicon, the thermocapillary flow is not linear. The fully nonlinear flow is strong and unsteady (a weak oscillation is present) and it penetrates the interior. Some non-rotating flow results are also presented. Since silicon as a large value of thermal conductivity, one would expect the temperature fields to be determined by conduction alone. This is true for the linear and weakly nonlinear flows, but for the stronger nonlinear flow the results show that temperature advection is also important. Uniform rotation may still be a means of confining the flow and the results obtained define the procedure to be used to examine this hypothesis.

Fowlis, W. W.↗

The effects of g-jitter and surface tension induced convection on float zones

The effects of g-jitter on nonencapsulated and encapsulated liquid bridges were investigated numerically, using fluid characteristics and parameters from three fluid systems: a silicone oil bridge, a methanol bridge, and a silicon melt. Results showed that complex flow patterns can arise in g-jitter environment which significantly modify the heat-transfer characteristics of the system. It was found that the nonencapsulated liquid bridges and float zone melts were dominated by surface-tension driven convection, with very little impact on the flows by residual and g-jitter accelerations. Zone encapsulation resulted in a sizeable drop in the maximum fluid velocities. The g-jitter computations on the encapsulated float zones resulted in significant augmentation of the maximum velocities and heat transfer, with the silicon melt being the least sensitive to g-jitter acceleration.

Ramachandran, N.↗

Suppression of Marangoni Convection in Float Zones

The basic purpose of this program is to demonstrate by means of an Earth-based 1-g experiment that the undesirable Marangoni (surface tension) convection can be suppressed or significantly reduced by means of gas jets directed tangentially to the free surface of the liquid in a float zone. These jets will establish the tangential shear stress field over the surface which must be adjusted to equal the counter-stress resultant of the Marangoni shear stress which causes the convection. For proposed materials processing in space (o-g), particularly of important, highly reactive semiconductor materials, e.g., silicon, microgravity will virtually eliminate the unwanted thermal-buoyancy convection in the liquid silicon, but will have no effect in reducing the Marangoni convection. Unless this can be sufficiently suppressed by other means, there may be no significant advantages to the proposed space processing of reactive semiconductors. Although some inert gas such as argon must be used for the corrosive liquid silicon, the Earth-based experiment uses air jets and various transparent oils, since the basic principle involved is the same. The first float zone is enclosed in a very small rectangular box with a quasi-planar free surface. Stable Marangoni convection has been achieved and velocities measured photographically. The air jet system with variable velocity and temperature is under construction. Three independent parameters must be optimized to attain maximum suppression: the gas velocity, angle of attack, and gas temperature.

Dressler, R. F.↗

Influence of Thermocapillary Flow on Capillary Stability: Long Float-Zones in Low Gravity

A model problem is posed to study the influence of flow on the interfacial stability of a nearly cylindrical liquid bridge for lengths near its circumference (the Plateau-Rayleigh limit). The flow is generated by a shear stress imposed on the deformable interface. The symmetry of the imposed shear stress mimics the thermocapillary stress induced on a float-zone by a ring heater (i.e. a full zone). Principal assumptions are (1) zero gravity, (2) creeping flow, and (3) that the imposed coupling at the free surface between flow and temperature fields is the only such coupling. A numerical solution, complemented by a bifurcation analysis, shows that bridges substantially longer than the Plateau-Rayleigh limit are possible. An interaction of the first two capillary instabilities through the stress-induced flow is responsible. Time-periodic standing waves are also predicted in certain parameter ranges. Motivation comes from extra-long float-zones observed in MEPHISTO space lab experiments (June 1994).

Chen, Yi-Ju↗

Energy Stability of Thermocapillary Convection in Models of the Float Zone Process

The energy-stability of thermocapillary convection in models of the float-zone, crystal-growing process was studied. Stability limits, as functions of pertinent parameters, that will identify conditions which will not allow the existence of an undesirable oscillatory flow instability were determined. Such instabilities may occur in the space processing of semiconductor materials. The determination of the stability limits will involve two sets of numerical computations: (1) solution of the nonlinear governing equations together with the appropriate boundary conditions to determine the basic state (in general, velocity, pressure and temperature fields and the displacement of free surfaces and interfaces); and (2) solution of a nonlinear Euler-Lagrange systems for the energy-stability limit. Both computations, while difficult, should be within the scope of available computer capability and available concepts in numerical analysis. Finite-element methods are attractive candidates for the numerical work.

Neitzel, G. P.↗

Measurement of Temperature Fluctuations and Microscopic Growth Rates in a Silicon Floating Zone and Microgravity

A silicon crystal growth experiment has been accomplished using the floating-zone technique under microgravity on a sounding rocket (TEXUS 36). Measurements of temperature fluctuations in the silicon melt zone due to time dependent thermocapillary convection (Marangoni convection) and an observation of the microscopic growth rate were simultaneously performed during the experiment. Temperature fluctuations of about 0.5 - 0.7 C with a frequency range < 0.5Hz were detectable. The microscopic growth rate fluctuates considerably around the average growth rate of 1 mm/min: Growth rates up to 3 to 4mm/min, close to zero mm/min, as well as negative values (backmelting) were observed. Dopant striations are clearly visible in the Sb-doped crystal. They were characterized by Spreading Resistance measurements and Differential Interference Contrast microscopy. The frequencies of temperature fluctuations, microscopic growth rates, and the dopant inhomogeneities correspond quite well, with main frequencies between 0.1 and 0.3 Hz. 3D numerical simulations were performed to predict the optimum position of the temperature sensor, and the characteristic temperature amplitudes and frequencies. At a position 3.4mm above the interface and 1.4mm inside the melt, equivalent to the sensor tip position in the experiment, temperature fluctuations up to 1.8 C and frequencies ? 0.25Hz were found in the simulations.

Schweizer, Markus↗

Laser-Heated Floating Zone Production of Single-Crystal Fibers

This report describes how a laser-heated floating zone apparatus can be used to investigate single-crystal fibers of various compositions. A feedrod with a stoichiometric composition of high-purity powders was connected to a pedestal and fed into a laser scan where it combined with a single-crystal fiber seed. A molten zone was formed at this junction. As the feedrod was continuously fed into the laser scan, a single-crystal fiber of a prescribed orientation was withdrawn from the melt. The resultant fibers, whose diameters ranged from 100 to 250 gm, could then be evaluated on the basis of their growth behavior, physical properties, mechanical properties, and fiber perfection.

Ritzert, Frank↗

Thermal-capillary analysis of small-scale floating zones Steady-state calculations

Galerkin finite element analysis of a thermal-capillary model of the floating zone crystal growth process is used to predict the dependence of molten zone shape on operating conditions for the growth of small silicon boules. The model accounts for conduction-dominated heat transport in the melt, feed rod and growing crystal and for radiation between these phases, the ambient and a heater. Surface tension acting on the shape of the melt/gas meniscus counteracts gravity to set the shape of the molten zone. The maximum diameter of the growing crystal is set by the dewetting of the melt from the feed rod when the crystal radius is large. Calculations with small Bond number show the increased zone lengths possible for growth in a microgravity environment. The sensitivity of the method to the shape and intensity of the applied heating distribution is demonstrated. The calculations are compared with experimental observations.

Duranceau, J. L.↗

Heat transfer and fluid flow in floating-zone crystal growth with a mostly covered melt surface

Computer simulation was conducted to study a modified floating-zone crystal growth process, in which the melt surface is mostly covered with a heated ring. The growth of 6-mm diameter single crystals of NaNO3 was considered, and the effects of the following parameters were studied: (1) temperature of the ring, (2) growth rate, (3) surface tension-temperature coefficient of the melt, (4) thermal expansion coefficient of the melt, and (5) gravity. It was demonstrated that thermocapillary convection in the melt zone is reduced significantly in this modified process. The model was checked against the measured lengths of the meniscus near the growth front and axial temperature distribution in a growing crystal, and the agreement was good.

Lan, C. W.↗

Confinement of thermocapillary floating zone flow by uniform rotation

Smith and Greenspan (1984) examined theoretically the idea of using a uniform rotation of the floating zone system to confine the thermocapillary flow in crystal growth experiments to the melt sidewall, leaving the interior of the melt passive. Here, that model is extended to a full zone with a more realistic temperature distribution imposed on the sidewall, and both linear and nonlinear thermocapillary flows are theoretically studied. Linearized, analytical solutions are found using singular perturbation theory and the various sidewall boundary layers described by Greenspan (1969) for rotating fluids. The analytical and linearized numerical results are compared, and the linear and nonlinear flows are discussed. The results demonstrate that the thermocapillary flow is strong and that rotation cannot confine the flow. Temperature advection by strongly nonlinear flow is significant even for the small Prandtl number of silicon.

Fowlis, W. W.↗

Problems with state-of-the-art float zone silicon

An application in which CCD optical imaging arrays with 250,000 elements are fabricated from the best commercially available float zone Si is described. Two image defects are described which appear to be related to the starting material. The striation effect appears to be caused by resistivity and recombination center variations. Up to 30 percent variations in resistivity was measured across a sample.

Jastrzebski, L.↗

Thermocapillary convection in a model float-zone

A finite-element method has been used to study thermocapillary convection in a model of relevance to the float-zone, crystal-growth process. The geometry consists of a pair of horizontal isothermal surfaces with a Boussinesq liquid suspended between them. Because of the variation of surface tension with temperature, the temperature gradient along the free surface drives thermocapillary convection. The free surface is allowed to deform and its location is calculated along with the velocity and temperature fields. Cases in which thermocapillarity dominates and others in which it interacts with an unstable axial buoyancy gradient are treated. In order to obtain information of possible interest to potential microgravity applications, the influence of the Grashof number is investigated.

Neitzel, G. P.↗

Lithium-ion drifting: Application to the study of point defects in floating-zone silicon

The use of lithium-ion (Li(+)) drifting to study the properties of point defects in p-type Floating-Zone (FZ) silicon crystals is reported. The Li(+) drift technique is used to detect the presence of vacancy-related defects (D defects) in certain p-type FZ silicon crystals. SUPREM-IV modeling suggests that the silicon point defect diffusivities are considerably higher than those commonly accepted, but are in reasonable agreement with values recently proposed. These results demonstrate the utility of Li(+) drifting in the study of silicon point defect properties in p-type FZ crystals. Finally, a straightforward measurement of the Li(+) compensation depth is shown to yield estimates of the vacancy-related defect concentration in p-type FZ crystals.

Silicon↗

Laminar mixing in a small floating zone

The relationship between the flow and solute fields during steady mass transfer of a dilute component is analyzed for multi-cellular rotating flows in the floating zone process of semiconductor growth. When the recirculating flows are weak in relation to the rate of crystal growth, a closed-form solution clearly shows the link between the convection pattern in the melt and the solute distribution across the surface of the growing solid. In the limit of strong convection, finite element calculations demonstrate the tendency of the composition to become uniform over the majority of the melt. The solute segregation in the product crystal is greatest when the recirculating motion is comparable to the rate of crystal growth, and points to the danger in attempting to grow compositionally uniform materials from a nearly convectionless melt.

Harriott, George M.↗

Thermocapillary flow and melt/solid interfaces in floating-zone crystal growth under microgravity

Computer simulation of steady-state axisymmetrical heat transfer and fluid flow was conducted to study thermocapillary flow and melt/solid interfaces in floating-zone crystal growth under microgravity. The effects of key variables on the extent of thermocapillary flow in the melt zone, the shapes of melt/solid interfaces and the length of the melt zone were discussed. These variables are: (1) the temperature coefficient of surface tension (or the Marangoni number), (2) the pulling speed (or the Peclet number), (3) the feed rod radius, (4) the ambient temperature distribution, (5) the heat transfer coefficient (or the Biot number), and (6) the thermal diffusivity of the material (or the Prandtl number).

Lan, C. W.↗