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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 73 records · Page 4
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

Plasma flows during the ablation stage of an over-massed pulsed-power-driven exploding planar wire array

We characterize the plasma flows generated during the ablation stage of an over-massed exploding planar wire array, fielded on the COBRA pulsed-power facility (1 MA peak current, 250 ns rise time). The planar wire array is designed to provide a driving magnetic field (80–100 T) and current per wire distribution (about 60 kA), similar to that in a 10 MA cylindrical exploding wire array fielded on the Z machine. Over-massing the arrays enables continuous plasma ablation over the duration of the experiment without implosion. The requirement to over-mass on the Z machine necessitates wires with diameters of 75–100μm, which are thicker than wires usually fielded on wire array experiments. To test ablation with thicker wires, we perform a parametric study by varying the initial wire diameter between 33 and 100 μm. The largest wire diameter (100 μm) array exhibits early closure of the cathode-wire gap, while the gap remains open over the duration of the experiment for wire diameters between 33 and 75 μm. Laser plasma interferometry and time-gated extreme-ultraviolet (XUV) imaging are used to probe the plasma flows ablating from the wires. The plasma flows from the wires converge to generate a pinch, which appears as a fast-moving (V≈100kms−1) column of increased plasma density (n¯e≈2×1018cm−3) and strong XUV emission. Finally, we compare the results with three-dimensional resistive-magnetohydrodynamic (MHD) simulations performed using the code GORGON, the results of which reproduce the dynamics of the experiment reasonably well.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2021

Fluorescent toxins as ion channel activity sensors.

Voltage gated ion channels (VGICs) shape the electrical character of cells by undergoing structural changes in response to membrane depolarization. High-resolution techniques have provided a wealth of data on individual VGIC structures, but the conformational changes of endogenous channels in live cell membranes have remained unexplored. Here, we describe methods for imaging structural changes of voltage-gated K + channels in living cells, using peptidyl toxins labeled with fluorophores that report specific protein conformations. These Endogenous Voltage-sensor Activity Probes (EVAPs) enable study of both VGIC allostery and function in the context of endogenous live-cell membranes under different physiological states. In this chapter, we describe methods for the synthesis, imaging, and analysis of dynamic EVAPs, which can report K + channel activity in complex tissue preparations via 2-photon excitation microscopy, and environment-sensitive EVAPs, which report voltage-dependent conformational changes at the VGIC-toxin interface. The methods here present the utility of current EVAPs and lay the groundwork for the development of other probes that act by similar mechanisms. EVAPs can be correlated with electrophysiology, offering insight into the molecular details of endogenous channel function and allostery in live cells. This enables investigation of conformational changes of channels in their native, functional states, putting structures and models into a context of live-cell membranes. The expansive array of state-dependent ligands and optical probes should enable probes more generally for investigating the molecular motions of endogenous proteins.

Stewart, Robert↗
DOE OSTI2020

Device-Level Multidimensional Thermal Dynamics With Implications for Current and Future Wide Bandgap Electronics

Researchers have been extensively studying wide-bandgap (WBG) semiconductor materials such as gallium nitride (GaN) with an aim to accomplish an improvement in size, weight, and power of power electronics beyond current devices based on silicon (Si). However, the increased operating power densities and reduced areal footprints of WBG device technologies result in significant levels of self-heating that can ultimately restrict device operation through performance degradation, reliability issues, and failure. Typically, self-heating in WBG devices is studied using a single measurement technique while operating the device under steady-state direct current measurement conditions. However, for switching applications, this steady-state thermal characterization may lose significance since the high power dissipation occurs during fast transient switching events. Therefore, it can be useful to probe the WBG devices under transient measurement conditions in order to better understand the thermal dynamics of these systems in practical applications. In this work, the transient thermal dynamics of an AlGaN/GaN high electron mobility transistor (HEMT) were studied using thermoreflectance thermal imaging and Raman thermometry. Also, the proper use of iterative pulsed measurement schemes such as thermoreflectance thermal imaging to determine the steady-state operating temperature of devices is discussed. These studies are followed with subsequent transient thermal characterization to accurately probe the self-heating from steady-state down to submicrosecond pulse conditions using both thermoreflectance thermal imaging and Raman thermometry with temporal resolutions down to 15 ns.

42 ENGINEERING↗
DOE OSTI2021

First Experiments and Radiographs on the MegaJOuLe Neutron Imaging Radiography (MJOLNIR) Dense Plasma Focus

We report a dense plasma focus (DPF) is a relatively compact coaxial plasma gun, which completes its discharge as a Z-pinch. These devices are designed to operate at a variety of scales to produce short (<100 ns) pulses of ions, X-rays, and/or neutrons. LLNL recently constructed and brought into operation a new device, the MegaJOuLe Neutron Imaging Radiography (MJOLNIR) DPF, which is designed for radiography and high-yield operations. This device has been commissioned and has achieved neutron yields of up to 3.8E11 neutrons/pulse at 2.5-MA peak current while operating at up to 1 MJ of stored energy in its original pulsed power configuration. MJOLNIR is equipped with a wide range of diagnostics, including nuclear activation detectors, neutron time-of-flight (nToF) detectors, a fast-framing camera, optical light gates, and a time-gated neutron and X-ray imager. LLNL also runs unique particle-in-cell (PIC) simulations of DPF discharges in the Chicago code and has gained significant insight into the various physical factors that influence neutron yield. MJOLNIR is one of the first DPFs whose design and continual upgrades are heavily influenced by model predictions. In this article, we describe insights from modeling, device operation, and recent results. Comparisons between modeling predictions and measurements, as well as X-ray and neutron images are presented.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2021

Nanosecond Gated CMOS Camera (NSGCC) ICD (Rev. 2.1)

The Ultra-Fast X-ray Imager (UXI) program is an ongoing effort at Sandia National Laboratories to create high speed, multi-frame, time-gated Read Out Integrated Circuits (ROICs), and a corresponding suite of photodetectors to image a wide variety of High Energy Density (HED) physics experiments on both Sandia’s Z-Machine and LLNL’s National Ignition Facility (NIF). Several cameras have been designed over the length of the program; one of the most recent is the Icarus, which is an improvement on past imagers (Furi and Hippogriff). A second sensor that can be connected is the Daedalus sensor. The Icarus is a 1024 × 512-pixel array with either 25 μm or 8 µm spatial resolution containing four frames of storage per pixel and has improved timing generation and distribution components while achieved 2 ns time gating. The Daedalus sensor is also a 1024 x 512-pixel array with 25 µm special resolution containing three frames of storage per pixel and has an increased set of features for a wider variety of applications from interlacing of rows in each frame to configurability of all shutters. See Section 14 for details regarding the Icarus implementation of the firmware and Section 15 for details regarding the Daedalus implementation. Due to the unique test environments UXI sensors are targeted for, full custom hardware was required to physically mount an Icarus or Daedalus sensor, manage its various functions, and read out pixel data for transfer to a host computer. Beyond experimental functionality, the hardware also needed to accommodate sensor characterization requirements. Lawrence Livermore National Laboratory’s ‘Version 4.0 Board’ was the result of these efforts. It mounts all the components required to fully utilize the Icarus and Daedalus sensors including analog to digital converters to convert pixel data and various system voltages to digital form for readout and analysis, DAC channels for remote configuration of critical bias voltages, static random-access memories to buffer pixel data, RS422 and Gigabit Ethernet communications for remote access, and an FPGA to tie these components together. This document describes the FPGA electrical interfaces in detail to allow the reader a greater understanding of the device, and to facilitate implementation of custom software to control and manage it. The Version 4.0 Board is a continuation of the Nano-second Gated CMOS hardware design that retains much of the functionality of the Version 1.0 Board while adding features including a DAC instead of digital potentiometers, as well as sensors for pressure and radiation. The Version 4.0 board is intended for applications requiring tight form-factor enclosures. It is composed of two stacking boards; one holds the FPGA and regulators to power the various components of the board while the other contains the mating connector to the sensor, image-readoff ADCs, the DAC, and other components.

42 ENGINEERING↗
DOE OSTI2026

Pulsed laser synthesis of mesoporous metal chalcogenide thin films

Mesoporous films of the metal chalcogenide B-FeSe were grown on MgO substrates by KrF pulsed laser deposition (PLD) in an argon background. At 100 mTorr, gated intensified charge-coupled device imaging and ion probe measurements showed that the plasma plume responsible for crystal growth initially comprised three components, with distinct expansion velocities. Plume interactions with the substrate heater and ablation target gave rise to complex dynamics, including collisions between the charged leading edge—rebounding between the substrate and the target—and slower-moving species in the plume interior. Film growth was dominated by species with kinetic energies ≤0.5 eV/atom. X-ray reflectivity revealed that films grown in this environment—with a substrate temperature of 350 ° C, a laser fluence of 1.0 J cm −2 , and a 7.5 mm 2 spot area—formed a porous framework with 15% porosity. Atomic force microscopy showed surface features that suggest pore sizes below 100 nm. X-ray diffraction indicated that the porous films were epitaxial with respect to the substrate and likely grew by oriented-attachment of gas-phase molecular clusters or very small nanoparticles, in contrast to the conventional epitaxy of vacuum films from atomic constituents. The in-plane orientation of the mesoporous films was B-FeSe [100]||[110] MgO, attributed to the soft landing of pre-formed crystallites on the MgO substrates, where protruding Se rows of B-FeSe aligned with corrugations of the MgO surface. In conclusion, this work implies that growth of candidate electrocatalyst materials by PLD in inert gas background may allow mesoporous frameworks with a single crystallographic orientation that expose specific crystal facets for electrochemical reactions and active site engineering.

cluster epitaxy↗
DOE OSTI2020

Advances in mapping of x-ray emission from NIF hohlraums

A newly available ns-gated laser-entrance-hole (GLEH) imager in the National Ignition Facility provides a routine, non-perturbative measurement of hohlraum x-ray emission from inner and outer laser beam deposition regions. The GLEH records the x-ray flux integrated over complex interactions of various part of hohlraum plasma that evolves on a sub-nanosecond time scale. In using these images to unravel hohlraum physics, the first step is to pinpoint the origin inside the hohlraum of the observed x-ray image features. By mapping the hohlraum emission to the GLEH images using high-resolution simulations, one can interpret the GLEH images and gain insight into the hohlraum dynamics.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2022

Design of a Multi-Monochromatic X-ray Imager (MMI) for Kr K-shell line emission

We report the Multi-Monochromatic X-ray Imager (MMI) is a time-gated spectrometer used in implosion experiments at the OMEGA laser facility. From the data, electron temperature and density spatial distributions can be obtained at different implosion times. Previous MMI designs used Ar K-shell emission (3–6 keV) as a spectroscopic tracer and provided a spectral resolution of around 20 eV. However, Ar K-shell line emission becomes less useful at electron temperatures above 2 keV due to over-ionization. Kr K-shell (12–16 keV) has been shown to be an attractive alternative to diagnose hot implosion cores in recent publications. The purpose of this paper is to show a new point design that allows the MMI to detect this higher photon energy range with suitable spectral resolution. The algorithm used to find the optimal design couples a ray-tracing code and an exhaustive parameter space search. This algorithm may be useful as a tool to find optimal MMI designs for other purposes, i.e., other spectral regions for other spectroscopic tracers. So, the main change between the two designs is the replacement of the multi-layer mirror with a flat Bragg Ge (220) crystal. The final Kr K-shell MMI design has a photon energy range from 12 to 16.1 keV.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2025

Reduced thermal resistance of Al-rich AlGaN HEMTs via top-side diamond integration

We report back-end-of-line growth of nanocrystalline diamond (NCD) on ultrawide bandgap (UWBG) high Al content aluminum gallium nitride (AlGaN) channel high electron mobility transistors for thermal management. A thin (∼15 nm) silicon nitride (SiN x ) interlayer was deposited to protect the device surface before performing a low temperature (500 °C) NCD growth process in an attempt to protect the gates on these fully fabricated devices. Notably, atomic force microscopy showed that the maximum lateral grain size exceeded 300 nm even though the film thickness was ∼250 nm. Comparing electrical (DC) performance before and after NCD growth, the gate leakage increased by ∼10 2 after NCD growth. Despite the lower NCD growth temperature, intermixing of the Ni and Au was observed in the Schottky gate metal stack; however, we believe there is another mechanism, possibly hydrogen-related, that is responsible for the measured increase in gate leakage. Regarding thermal management, the device-level thermal resistance (quantified using the average gate temperature rise measured by thermoreflectance imaging) was reduced by 29% through the incorporation of the top-side diamond film. Using time-domain thermoreflectance, the thermal conductivity of the ≈250 nm thick NCD film was measured to be 45 ± 25 W m −1 K −1 . This is expected to be at least 5× greater than the thermal conductivity of the thin disordered AlGaN alloy. There could also be a coupled electrothermal component contributing to the reduced temperature rise from electric field spreading and consequent heat spreading. This study demonstrates a promising first step toward device-level thermal management of high power UWBG Al-rich AlGaN devices.

Lundh, James Spencer [U.S. Naval Research Laborato↗
DOE OSTI2021

Timing characterization of fast hCMOS sensors

We describe a method of analyzing gate profile data for ultrafast x-ray imagers that allows pixel-by-pixel determination of temporal sensitivity in the presence of substantial background oscillations. With this method, systematic timing errors in gate width and gate arrival time of up to 1 ns (in a 2 ns wide gate) can be removed. In-sensor variations in gate arrival and gate width are observed, with variations in each up to 0.5 ns. This method can be used to estimate the coarse timing of the sensor, even if errors up to several ns are present.

Benedetti, L. R. (ORCID:0000000160502983)↗
DOE OSTI2023

Gated truncated readout system

A gated truncated readout system for position sensitive or imaging detectors that improves resolution over traditional readout systems. The readout system includes two or more amplifiers that receive a multichannel output analog data from the detector. Analog gates control circuitry, included in the readout circuit, receives the signals from the amplifiers, determines a fractional value of the sum-integral of the signals, and enables analog gates operation around an area of interest, disabling all other channels where noise dominates the signal value and thereby improving interpolation accuracy of the signals centroid position and the detector resolution. Filtered signals are transmitted to a centroid interpolation signal processing device for computation of the centroid position. As a result disabling all channels where noise dominates the signal value, the gated truncated readout system provides better accuracy improved detector resolution.

Popov, Vladimir↗
DOE OSTI2023

Design and Characterization of a Burst Mode 20 Mfps Low Noise CMOS Image Sensor

This paper presents a novel ultra-high speed, high conversion-gain, low noise CMOS image sensor (CIS) based on charge-sweep transfer gates implemented in a standard 180 nm CIS process. Through the optimization of the photodiode geometry and the utilization of charge-sweep transfer gates, the proposed pixels achieve a charge transfer time of less than 10 ns without requiring any process modifications. Moreover, the gate structure significantly reduces the floating diffusion capacitance, resulting in an increased conversion gain of 183 µV/e−. This advancement enables the image sensor to achieve the lowest reported noise of 5.1 e− rms. To demonstrate the effectiveness of both optimizations, a proof-of-concept CMOS image sensor is designed, taped-out and characterized.

47 OTHER INSTRUMENTATION↗
DOE OSTI2023

Post-Shot Report for OMEGA Double Cylinders (CylDRT 22B)

The direct-drive double cylinder experimental platform is a high-energy-density (HED) science platform designed to image an imploding cylindrical target. The target consists of a directly-driven outer cylinder and a shock-and-collision driven inner cylinder. The purpose of this platform is to study hydrodynamic instability growth on the inner cylinder, the outer surface of which is classically Rayleigh-Taylor unstable during the acceleration phase. We present results from recent experiments at the OMEGA laser facility. These experiments were designed as a proof-of-principle for the platform, using the same cylinder exterior dimensions and direct-drive beam configuration as previous single cylinder experiments. In these experiments, three sets of targets were fielded: no machined perturbations (smooth), a sinusoidal mode-10 perturbation on the outer surface of the inner cylinder, and a mode-20 perturbation on the outer surface of the inner cylinder. The primary diagnostic was a gated x-ray framing camera which imaged the backlit inner cylinder on-axis for sixteen frames over a time window of 1 ns for each shot. A second side-lit radiograph captured one image per shot, diagnosing axial uniformity. In this report we include an overview of the results from both the backlighter and the sidelighter diagnostics. We discuss at length the experimental analysis process. Finally, we present the results of the smooth target implosion trajectory and compare them to post-shot simulations. We see favorable agreement between simulation and experiment.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2026

Optical-Gating of Spin-based Quantum States (Final Report)

This project developed a generalizable strategy for optical control of spin-based quantum states through the Photoisomerization-Induced Spin–Charge Excited State (PISCES) process, in which a photochromic spirooxazine ligand bound to an electronically bistable metal complex enables reversible, room-temperature optical switching of spin states in both dilute matrices and the solid state. A multidisciplinary team integrated synthesis, spectroscopy, theory, and surface science to establish design principles for opto-spintronic quantum materials. Systematic structure–property studies across four spirooxazine series revealed that donor–π–acceptor interactions govern thermal isomerization, which proceeds via a rotational pathway. Pulsed EPR measurements demonstrated millisecond-scale coherence times in cobalt-dioxolene-spirooxazine complexes, establishing their promise as optically addressable molecular qubits; the approach was extended to Cu(II), Ni(II), and lanthanide complexes, including optical modulation of zero-field splittings and clock transitions. Two-dimensional IR spectroscopy resolved picosecond ground-state population exchange dynamics, while ab initio calculations elucidated photoisomerization mechanisms and parametrized Hamiltonians for spin relaxation and decoherence. Toward device integration, the team fabricated 2D polymer scaffolds for covalent qubit organization, developed tip-enhanced Raman imaging of molecular monolayers, and demonstrated optical gating of gate voltage in spirooxazine-graphene field-effect transistors. The project produced numerous publications, dissertations, and presentations, and trained over 30 researchers.

2D polymers↗
DOE OSTI2024

Nuclear imaging to diagnose and correct target-driver registration at high-repetition-rate for improved reactor efficiency

Inertial Confinement Fusion produces energy from a burning plasma lasting a fraction of a nanosecond. Power plant designs based on Inertial Fusion Energy (IFE) will need to ignite targets 1-10 times a second, fired as projectiles into a chamber and delivering the driver to the target location. Driver asymmetry is known to impact ICF experiments at gain near unity and remains a candidate for primary yield degradation, and therefore fusion power plant energy output, for high-gain target designs. For a Fusion Power Plant (FPP), continuous and real-time monitoring of target performance provides an opportunity to stabilize or correct the target-driver registration. This requires x-ray and neutron imaging with a large field-of-view, sufficiently high resolution, fast analysis and to subtend a minimal solid angle. We introduce design criteria for such an imaging system that uses a coded aperture and time-gated, lens-coupled scintillators as a viable solution and outline the research steps required to field such a system. Integrating the imaging system into an IFE power plant as part of an active feedback loop could increase average power output by reducing the failure rate due to mis-aligned drivers with respect to the target.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2022

Quantum pixel representations and compression for N-dimensional images

Abstract We introduce a novel and uniform framework for quantum pixel representations that overarches many of the most popular representations proposed in the recent literature, such as (I)FRQI, (I)NEQR, MCRQI, and (I)NCQI. The proposed QPIXL framework results in more efficient circuit implementations and significantly reduces the gate complexity for all considered quantum pixel representations. Our method scales linearly in the number of pixels and does not use ancilla qubits. Furthermore, the circuits only consist of $$R_y$$ R y gates and $$\text {CNOT}$$ CNOT gates making them practical in the NISQ era. Additionally, we propose a circuit and image compression algorithm that is shown to be highly effective, being able to reduce the necessary gates to prepare an FRQI state for example scientific images by up to 90% without sacrificing image quality. Our algorithms are made publicly available as part of , a Quantum Image Pixel Library.

97 MATHEMATICS AND COMPUTING↗
DOE OSTI2025

Deep Learning with Reflection High-Energy Electron Diffraction Images to Predict Cation Ratio in Sr 2 x Ti 2(1– x ) O 3 Thin Films

Machine learning (ML) with in-situ diagnostics offers a transformative approach to accelerate, understand, and control thin film synthesis by uncovering relationships between synthesis conditions and material properties. In this study, we demonstrate the application of deep learning to predict the stoichiometry of Sr 2x Ti 2(1–x) O 3 thin films using reflection high-energy electron diffraction images acquired during pulsed laser deposition. A gated convolutional neural network trained for regression of the Sr atomic fraction achieved accurate predictions with a small dataset of 31 samples. Explainable AI techniques revealed a previously unknown correlation between diffraction streak features and cation stoichiometry in Sr 2x Ti 2(1–x) O 3 thin films. Here, our results demonstrate how ML can be used to transform a ubiquitous in-situ diagnostic tool, that is usually limited to qualitative assessments, into a quantitative surrogate measurement of continuously valued thin film properties. Such methods are critically needed to enable real-time control, autonomous workflows, and accelerate traditional synthesis approaches.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2019

Defects in Highly Anisotropic Transition-Metal Dichalcogenide PdSe 2

The atomic and electronic structures of the pristine PdSe 2 as well as various intrinsic vacancy defects in PdSe 2 are studied comprehensively by combining scanning tunneling microscopy, spectroscopy and density functional theory calculations. Other than the topmost Se atoms, sublayer Pd atoms, the intrinsic Pd and Se vacancy-defects are identified. Both V Se and V Pd defects induce defect states near Fermi level. As a result, the vacancy defects can be negatively charged by tip gating effect. At negative sample bias, the screened Coulomb interaction between STM tip and the charged vacancies creates disk-like protrusion around V Pd and crater-like features around V Se . The magnification effect of the long-range charge localization at the charged defect site makes sublayer defects as deep as 1nm visible even in STM images. In conclusion, this result proves that by gating the probe, scanning probe microscopy can be used as an easy tool for characterizing sublayer defects in a nondestructive way.

36 MATERIALS SCIENCE↗