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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 73 records · Page 4
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

Sequential Deposition of Multicomponent Bulk Heterojunctions Increases Efficiency of Organic Solar Cells

Constructing tandem and multi-blend organic solar cells (OSCs) is an effective way to overcome the absorption limitations of conventional single-junction devices. However, these methods inevitably require tedious multilayer deposition or complicated morphology-optimization procedures. Herein, sequential deposition is utilized as an effective and simple method to fabricate multicomponent OSCs with a double-bulk heterojunction (BHJ) structure of the active layer to further improve photovoltaic performance. Two efficient donor-acceptor pairs, D18-Cl:BTP-eC9 and PM6:L8-BO, are sequentially deposited to form the D18-Cl:BTP-eC9/PM6:L8-BO double-BHJ active layer. In these double-BHJ OSCs, light absorption is significantly improved, and optimal morphology is also retained without requiring a more complicated morphology optimization involved in quaternary blends. Compared to the quaternary blend devices, energy loss (E loss ) is also reduced by rationally matching each donor with an appropriate acceptor. Consequently, the power conversion efficiency (PCE) is improved from 18.25% for D18-Cl:BTP-eC9 and 18.69% for PM6:L8-BO based binary blend OSCs to 19.61% for the double-BHJ OSCs. In contrast, a D18-Cl:PM6:L8-BO:BTP-eC9 quaternary blend of OSCs exhibited a dramatically reduced PCE of 15.83%. Finally, these results demonstrate that a double-BHJ strategy, with a relatively simple processing procedure, can potentially enhance the device performance of OSCs and lead to more widespread use.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Solution‐Processed CsPbBr 3 Quantum Dots/Organic Semiconductor Planar Heterojunctions for High‐Performance Photodetectors

Abstract Planar heterojunctions (PHJs) are fundamental building blocks for construction of semiconductor devices. However, fabricating PHJs with solution‐processable semiconductors such as organic semiconductors (OSCs) is a challenge. Herein, utilizing the orthogonal solubility and good wettability between CsPbBr 3 perovskite quantum dots (PQDs) and OSCs, fabrication of solution‐processed PQD/OSC PHJs are reported. The phototransistors based on bilayer PQD/PDVT‐10 PHJs show responsivity up to 1.64 × 10 4 A W −1 , specific detectivity of 3.17 × 10 12 Jones, and photosensitivity of 5.33 × 10 6 when illuminated by 450 nm light. Such high photodetection performance is attributed to efficient charge dissociation and transport, as well as the photogating effect in the PHJs. Furthermore, the tri‐layer PDVT‐10/PQD/Y6 PHJs are used to construct photodiodes working in self‐powered mode, which exhibit broad range photoresponse from ultraviolet to near‐infrared, with responsivity approaching 10 −1 A W −1 and detectivity over 10 6 Jones. These results present a convenient and scalable production processes for solution‐processed PHJs and show their great potential for optoelectronic applications.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Probing the Contribution of Lateral Pathways to Out–of–Plane Charge Transport in Organic Bulk Heterojunctions

The nanoscale interpenetrating electron donor–acceptor network in organic bulk heterojunction (BHJ) solar cells results in efficient charge photogeneration but creates complex 3D pathways for charge transport. At present, little is known about the extent to which out-of-plane charge flow relies on lateral electrical connectivity. In this work, a procedure, based on conductive atomic force microscopy, is introduced to quantify lateral current spreading during out-of-plane charge transport. Using the developed approach, the dependence of lateral spreading on BHJ phase separation, composition, and molecule type (small molecule vs polymer) is studied. In the small-molecule BHJ, 7,7'-(4,4-bis(2-ethylhexyl)-4H-silolo[3,2-b:4,5-b']dithiophene-2,6-diyl)bis(6-fluoro-4-(5'-hexyl-[2,2'-bithiophen]-5-yl)benzo[c]-[1,2,5]thiadiazole):(6,6)-Phenyl-C 71 -butyric acid methyl ester (p-DTS(FBTTh 2 ) 2 :PC 71 BM), an increase is observed in lateral hole current spreading as the population of donor crystallites, bearing an edge-on molecular orientation, is increased. When integrated into BHJs, the polymer donor poly(3-hexylthiophene-2,5-diyl) (P3HT) leads to greater lateral hole current spreading and more spatially uniform charge transport than the small-molecule donor, owing to in-plane charge transport along the polymer backbone. Finally, through the newly introduced electrical characterization scheme, these experiments bring to light the role of lateral electrical connectivity in assisting charge navigation across BHJs.

14 SOLAR ENERGY↗
DOE OSTI2022

Progress in three-terminal heterojunction bipolar transistor solar cells

Conventional solar cells, including multijunction solar cells, are based on pn junctions as building blocks. In contrast, the three-terminal heterojunction bipolar transistor solar cell (3T-HBTSC) explores the use of a bipolar transistor structure to build a solar cell. The limiting efficiency of this transistor structure equals that of a double-junction solar cell. However, since the 3T-HBTSC does not require tunnel junctions, its minimal structure has only three semiconductor layers, while the minimal structure of a double junction solar cell has six. This work reviews the operation principles of this solar cell and the steps carried out towards its practical implementation. Experimental results on a GaInP/GaAs HBTSC prototype with bottom interdigitated contacts are presented.

14 SOLAR ENERGY↗
DOE OSTI2021

Carrier gradients and the role of charge selective contacts in lateral heterojunction all back contact perovskite solar cells

Realizing photovoltaic devices that achieve the full potential of the metal halide perovskite material will require improved insight regarding the role of selective contacts and how key interfaces operate when mobile defects are present. However, measuring interface properties in typical device stacks where the perovskite layer is thin and sandwiched between two contacts has been a challenge. Here, we fabricate p-i-n and p-n lateral heterojunctions with nickel oxide/titanium oxide all back contacts, permitting us to employ a comprehensive analysis approach, including ultraviolet and X-ray photoemission spectroscopy (UPS/XPS), angle-resolved X-ray absorption spectroscopy (XAS), Kelvin probe force microscopy (KPFM), surface photovoltage (SPV), hyperspectral imaging (HSI), and time-resolved fluorescence lifetime imaging microscopy (TR-FLIM) to discern the role of selective contacts. Specifically, we tune the selectivity of the contacts, changing the gradient in the carrier concentration across the surface of the active layer, which is connected to carrier extraction at the buried interface, and thus the device functionality.

25 ENERGY STORAGE↗
DOE OSTI2023

Investigation of Reactive Silver Ink Formula for Reduced Silver Consumption in Silicon Heterojunction Metallization

Silver is the most expensive non-silicon component in photovoltaic cells. This is particularly salient for silicon heterojunction (SHJ) cells, which rely on large quantities of low-temperature silver pastes (LT-SP). SHJ cells would benefit greatly from an industrially scalable metallization process that simultaneously offers low silver consumption, low finger resistivities (<20 μΩ·cm), and low processing temperatures. Printed reactive silver inks (RSI) are an innovative candidate to this end. Furthermore, this work furthers the research on RSI metallization by investigating the impact of ink formula on properties pertinent to SHJ cells, including electrical properties, line width, ink splatter, silver consumption, cell performance, and adhesion. We introduce a scalable, high-throughput flexible needle contact printing approach for metallization that solves many of the issues associated with drop-on-demand printing. The printed silver fingers are characterized using electrical measurements and top-down and cross-sectional microscopy. The best performing ink, consisting of silver acetate, ethylamine, and formic acid, achieved silver fingers with total resistivities of 3.1 μΩ·cm and contact resistivities of 3.2 mΩ·cm 2 when printed at 61 °C. This ink metallized a full-sized 156 mm × 156 mm SHJ cell. This is the first reported data for RSI metallization of a full-sized SHJ cell and shows how an optimized RSI can achieve similar performances to LT-SP while consuming 80–90% less silver.

14 SOLAR ENERGY↗
DOE OSTI2024

Solution-Processable Polymer Donor-Small Molecule Acceptor Bulk Heterojunction Organocatalysts for Enhancing CO 2 -to-CO Photoconversion

Metal-free organic semiconductors have emerged as a kind of promising star material in photocatalysis. However, their photocatalytic efficacy is impeded by the great recombination rate of the photogenerated charge carriers. Herein, we demonstrate the devising of solution-processable organic semiconductor bulk heterojunction (BHJ) systems with varying ratios by using BP3DT and PC 61 BM as the donor (D) and acceptor (A) candidates, respectively, for enhanced selective CO production from CO 2 photoreduction. The prepared BP3DT/PC 61 BM BHJs are solution-processed on both glass substrates (GS) and molecular sieves (MS) via a drop-casting technique to form an active thin film and porous photocatalysts to catalyze CO production. All BP3DT/PC 61 BM BHJs efficiently produce CO as the primary product in the existence of trace-level TEA/H 2 O (0.5 mL). Our results show that the photocatalytic efficiency depended on the D/A w% ratios and its nanoscale phase separation morphology within the BHJ, contributing to the promotion of exciton dissociation. Additionally, the BHJ undergoes an ostensible morphological transition from large-scale phase-separation to a fine mixed homogeneous nanoscale by varying the BP3DT/PC 61 BM blend ratio from 30/70 w% to 70/30 w%, which increases the interfacial area and shortens the distance of the exciton to the D/A surface, and promotes charge carrier separation, corroborated by photo-optical and photoelectrochemical experimental results. Accordingly, the resulting BP3DT/PC 61 BM BHJ@MS with a D/A ratio of 70/30 w% achieves a CO yield of 819 μmol·g cat -1 h -1 , surpassing those of pure PC 61 BM (126 μmol·g cat -1 h -1 ) and BP3DT (72 μmol·g cat -1 h -1 ) by 6.5- to 11.3-fold and also exceeding that of metal-free linear conjugated polymer-based organocatalysts reported to date. Specifically, this is the first work to develop an organic-semiconductor-based BHJ photocatalyst, which may offer a nascent way to design more efficient organocatalysts for CO 2 reduction.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2022

Silicon Heterojunction Field Performance

The market share of silicon heterojunction (SHJ) modules are expected to increase in the following years. The presentation discusses field performance of SHJ and compares it to other high-efficiency modules. In-depth materials characterization is used to understand the origins of degradation in these type of modules.

ENGINEERING,SOLAR ENERGY↗
DOE OSTI2020

Evaluating Materials Design Parameters of Hole-Selective Contacts for Silicon Heterojunction Solar Cells

Silicon heterojunction (SHJ) solar cell efficiencies are limited by parasitic absorption from the hydrogenated amorphous silicon (a-Si:H) front contact, but this may be mitigated by selecting an alternative carrier selective contact material with a wider band gap. When choosing such a material as the hole-selective contact (“p-layer”), the alignment of the material's valence band edge energy (E VB ) with that of crystalline silicon (c-Si) is an important criterion, but several other material parameters can also influence the band bending at the contact interface. Here, we simulate an (n)c-Si/(i)a-Si:H/p-layer interface to explore the influence of six materials parameters in a variable p-layer on the SHJ performance. We find a strong influence on the fill factor (FF) from thickness, doping, and E VB , and on V OC from the interfacial defect density; notably, optimal E VB is ~ 0.1 eV higher than the valence band edge energy of a-Si:H. Multiparameter sensitivity analyses demonstrate how performance is simultaneously influenced by E VB and doping; thus, both parameters should be optimized alongside one another. To assess the influence of these parameters experimentally, we grow p-type NiO x as a test-case p-layer, which shows that FFs decrease with the oxygen content likely from the increased misalignment of E VB . Although modest efficiencies are achieved experimentally (>7%), what is important is that our model simulates performance trends. With these results, we apply a materials discovery pipeline to suggest new materials (e.g., ZnTe and BeTe) to try as p-layers in the SHJ. This combination of simulations, experiments, and materials discovery informs a better understanding of contact selection in SHJ cells.

14 SOLAR ENERGY↗
DOE OSTI2021

Substrate-Controlled Electronic Properties of Perovskite Layer in Lateral Heterojunction Configuration

In this work, we fabricated halide perovskite-based lateral heterojunction devices with nickel oxide/titanium oxide all back contacts, allowing us to access the perovskite surface directly for analysis with various advanced techniques, including ultraviolet and X-ray photoemission spectroscopy (UPS/XPS), Kelvin probe force microscopy (KPFM), and surface photovoltage (SPY), to discern the role of selective contacts. Specifically, by tuning of the selectivity of the contacts, e.g., through varying the level of nickel oxidation, we show that the selectivity of the contacts induces a gradient in carrier concentration across the surface of the active layer that is connected to carrier extraction at the buried interface and hence to device functionality.

carrier concentration↗
DOE OSTI2022

Stability of Silicon Heterojunction Solar Cells Having Hydrogen Plasma Treated Intrinsic Layer

The open-circuit voltage of Silicon Heterojunction (HJ) cells can be improved by using extrinsic hydrogen plasma treatment (HPT) to reduce the trap states (NT) which we have verified using Deep Level Transient Spectroscopy (DLTS). However, hydrogen has been associated with long-term degradation. We have investigated the stability of HJ cells with and without HPT using accelerated degradation (1-sun illumination, 90 degrees C temperature, argon ambient for 1000 hours). The stability has been studied using DLTS, current-voltage, and Suns-Voc. Our results show HPT cells are stable and maintain their higher Voc and lower NT after accelerated degradation.

degradation↗
DOE OSTI2021

12.5 kV GaN Super-Heterojunction Schottky Barrier Diodes

In this work, we report GaN super-heterojunction Schottky barrier diodes (SHJ-SBDs) with substantially improved performance. Metal-2DEG sidewall n-ohmic contacts were deployed to achieve low contact resistance of 0.75 Ω · mm, avoiding the risk of abnormally high contact resistance caused by inaccurate etch depth control. A pGaN notch formed near the cathode successfully eliminated excessive hole conduction caused by the sidewall n-ohmic contact. Isolation was improved by a high-energy Al implantation step. The resulting SHJ-SBD exhibited a breakdown voltage (BV) of 12.5 kV and a specific ON-resistance of 100.8 mΩ · cm 2 .

42 ENGINEERING↗
DOE OSTI2023

Bringing high-efficiency silicon solar cells with heterojunction contacts to market with a new, versatile deposition technique

Silicon heterojunction (SHJ) and tunnel-oxide-passivated-contacts (TOPCon) solar cells are the future for silicon technology after passivated-emitter-and-rear-contact (PERC) cells. However, the tool costs (CapEx) for SHJ (TOPCon) make the cell lines more than 2 (1.5) times of the cost of the PERC, which hinders the wide adoption these new technologies despite higher efficiencies. A common challenge for both cell types is that the passivation layers are sensitive to sputter damage. Furthermore, for TOPCon cells, it is desirable to have an inline (instead of batch) process for tunnel oxide and polysilicon to maximize the throughput and thus reduce the operation cost.

14 SOLAR ENERGY↗
DOE OSTI2023

From Femtoseconds to Gigaseconds: The SolDeg Project to Analyze and Mitigate the Performance Degradation of a-Si:H/c-Si Heterojunction Solar Cells

We pursued two major projects. In the first, we studied the degradation of a-Si/c-Si Heterojunction cells. We substantially expanded our previously developed SolDeg platform, and incorporated hydrogen into it. We also expanded the capabilities of SolDeg by developing a three channel model for a very efficient way to determine long term junction dynamics. The first main result was that we identified hydrogen drifting away from the interface as a key degradation channel. The second was that we developed and proposed the concept of a “reverse silicon density gradient” in the a-Si layer that had the promise of reducing degradation by up to 80%. In the second project, we studied the degradation of TOPCon solar cells. We again identified a key degradation channel, which in these cells was the formation of pinholes across the oxide layer. We then again were able to develop and to propose a way to dramatically reduce degradation by discovering that tuning the hydrogen concentration forms a sharp and deep minimum of the recombination current.

14 SOLAR ENERGY↗
DOE OSTI2024

A Pseudo Planar Heterojunction Structure for Eco‐Friendly Printable Organic Solar Cells Achieving 19.05% Efficiency

Abstract Obtaining a well‐accurate vertical distribution active layer morphology through the air‐printing process is an essential task for achieving efficient scalable large‐area organic solar cells (OSCs). In this target, the desired and controllable pseudo planar heterojunction (PPHJ) active layer structure with suitable phase separation is developed by pre‐deposited D18‐Cl layer under the PM6:BTP‐eC9 film via an eco‐friendly manufacturing method. The addition of the D18‐Cl regulates molecular crystallization and leads to an ideal vertical stratification while simultaneously suppressing voltage loss, optimizing energetic disorder, and carrier management. Impressively, the optimal PPHJ devices perform superior power conversion efficiencies (PCEs) of 19.05% (100 nm), 17.33% (300 nm), and 14.14% (4 cm 2 ) compared to the BHJ devices. Importantly, the PPHJ OSCs also exhibit an impressive extrapolated T 80 (the time required to reach 80% of initial PCE) of long‐time storage and operational stability, as well as thermal stability.

Chemistry↗
DOE OSTI2020

Constructing an Adaptive Heterojunction as a Highly Active Catalyst for the Oxygen Evolution Reaction

Electrochemical water splitting is of prime importance to green energy technology. Particularly, the reaction at the anode side, namely the oxygen evolution reaction (OER), requires a high overpotential associated with O—O bond formation, which dominates the energy-efficiency of the whole process. Activating the anionic redox chemistry of oxygen in metal oxides, which involves the formation of superoxo/peroxo-like (O 2 ) n – , commonly occurs in most highly active catalysts during the OER process. Here, a highly active catalyst is designed: electrochemically delithiated LiNiO 2 , which facilitates the formation of superoxo/peroxo-like (O 2 ) n – species, i.e., NiOO*, for enhancing OER activity. The OER-induced surface reconstruction builds an adaptive heterojunction, where NiOOH grows on delithiated LiNiO 2 (delithiated-LiNiO 2 /NiOOH). At this junction, the lithium vacancies within the delithiated LiNiO 2 optimize the electronic structure of the surface NiOOH to form stable NiOO* species, which enables better OER activity. This finding provides new insight for designing highly active catalysts with stable superoxo-like/peroxo-like (O 2 ) n – for water oxidation.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Ultrathin and Ultrasensitive Direct X‐ray Detector Based on Heterojunction Phototransistors

Abstract Most contemporary X‐ray detectors adopt device structures with non/low‐gain energy conversion, such that a fairly thick X‐ray photoconductor or scintillator is required to generate sufficient X‐ray‐induced charges, and thus numerous merits for thin devices, such as mechanical flexibility and high spatial resolution, have to be compromised. This dilemma is overcome by adopting a new high‐gain device concept of a heterojunction X‐ray phototransistor. In contrast to conventional detectors, X‐ray phototransistors allow both electrical gating and photodoping for effective carrier‐density modulation, leading to high photoconductive gain and low noise. As a result, ultrahigh sensitivities of over 10 5 μC Gy air −1 cm −2 with low detection limit are achieved by just using an ≈50 nm thin photoconductor. The employment of ultrathin photoconductors also endows the detectors with superior flexibility and high imaging resolution. This concept offers great promise in realizing well‐balanced detection performance, mechanical flexibility, integration, and cost for next‐generation X‐ray detectors.

Gao, Yuanhong↗