Search NASA⌕ Search

SEARCH · Search NASA

Results for “impurity scattering”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 73 records · Page 4

Measurement of the liquid argon scintillation pulse shape using differentiable simulation in the coherent CAPTAIN-Mills experiment

The coherent CAPTAIN-Mills (CCM) experiment is a liquid argon (LAr) light collection detector searching for MeV-scale neutrino and beyond Standard Model physics signatures. Two hundred eight-inch photomultiplier tubes instrument the seven-ton fiducial volume with 50% photocathode coverage to detect light produced by charged particles. CCM’s light-based approach reduces requirements of LAr purity, compared to other detection technologies, such that sub-MeV particles can be reliably detected without additional LAr filtration and with 𝒪⁡(1) parts per million of common contaminants. We present a measurement of LAr light production and propagation parameters, with uncertainties, obtained from a sample of MeV-scale electromagnetic events. The optimization of this high-dimensional parameter space was facilitated by a differentiable optical photon Monte Carlo simulation and detailed photomultiplier tube response characterization. This result accurately predicts the timing and spatial distribution of light due to scintillation and Cherenkov emission in the detector. This is the first description of photon propagation in LAr to include several effects, including anomalous dispersion of the index of refraction near the ultraviolet resonance, Mie scattering from impurities, and Cherenkov light production.

Cherenkov detectors↗

Effects of strain, disorder, and Coulomb screening on free-carrier mobility in doped cadmium oxide

Here, the interplay of stress, disorder, and Coulomb screening dictating the mobility of doped cadmium oxide (CdO) is examined using Raman spectroscopy to identify the mechanisms driving dopant incorporation and scattering within this emerging infrared optical material. Specifically, multi-wavelength Raman and UV-vis spectroscopies are combined with electrical Hall measurements on a series of yttrium (X = Y) and indium (X = In) doped X:CdO thin-films. Hall measurements confirm n-type doping and establish carrier concentrations and mobilities. Spectral fitting along the low-frequency Raman combination bands, especially the TA+TO(X) mode, reveals that the evolution of strain and disorder within the lattice as a function of dopant concentration is strongly correlated with mobility. Coupling between the electronic and lattice environments was examined through analysis of first- and second-order longitudinal–optical phonon–plasmon coupled modes that monotonically decrease in energy and asymmetrically broaden with increasing dopant concentration. By fitting these trends to an impurity-induced Fröhlich model for the Raman scattering intensity, exciton–phonon and exciton–impurity coupling factors are quantified. These coupling factors indicate a continual decrease in the amount of ionized impurity scattering with increasing dopant concentration and are not as well correlated with mobility. This shows that lattice strain and disorder are the primary determining factors for mobility in donor-doped CdO. In aggregate, the study confirms previously postulated defect equilibrium arguments for dopant incorporation in CdO while at the same time identifying paths for its further refinement.

42 ENGINEERING↗

Impurity states and indirect exchange interaction in irradiated graphene

We theoretically investigate the impurity levels and exchange interaction between magnetic impurities in graphene driven by an off-resonant circularly polarized light field. Our analysis captures the non-perturbative effects resulting from scattering with magnetic impurities with a strong onsite potential. Under irradiation, a dynamical band gap opens up at the Dirac point, allowing impurity levels to exist inside the gap. These impurity levels are shown to give rise to a resonance feature in the exchange energy for impurities located either at the same or different sublattices. The exchange interaction also shows a wider spatial range of antiferromagnetic behavior due to irradiation. Furthermore, our work demonstrates that the exchange energy of magnetic impurities in graphene is extensively tunable by light irradiation in the presence of strong potential scattering.

2-dimensional systems↗

Efficient calculation of carrier scattering rates from first principles

Abstract The electronic transport behaviour of materials determines their suitability for technological applications. We develop a computationally efficient method for calculating carrier scattering rates of solid-state semiconductors and insulators from first principles inputs. The present method extends existing polar and non-polar electron-phonon coupling, ionized impurity, and piezoelectric scattering mechanisms formulated for isotropic band structures to support highly anisotropic materials. We test the formalism by calculating the electronic transport properties of 23 semiconductors, including the large 48 atom CH 3 NH 3 PbI 3 hybrid perovskite, and comparing the results against experimental measurements and more detailed scattering simulations. The Spearman rank coefficient of mobility against experiment ( r s = 0.93) improves significantly on results obtained using a constant relaxation time approximation ( r s = 0.52). We find our approach offers similar accuracy to state-of-the art methods at approximately 1/500th the computational cost, thus enabling its use in high-throughput computational workflows for the accurate screening of carrier mobilities, lifetimes, and thermoelectric power.

97 MATHEMATICS AND COMPUTING↗

Unexpected features in the optical vibrational spectra of δ-UO 3

Uranium trioxide displays a complex chemical phase space, with at least six structurally distinct polymorphs accessible via different synthetic routes. Remarkably, despite its technological importance, full structural and electronic characterization of these polymorphs remains an open area of study. δ-UO 3 in particular has attracted significant theoretical attention due to its high point group and space group symmetries, having U (VI) in octahedral coordination with polyhedra interconnected through corner-sharing to build a 3-D cubic lattice with space group symmetry Pm-3m and Z = 1. Critical experimental information, such as its optical vibrational spectra, are not known. Here, we study the Raman and infrared (IR) spectra of δ-UO 3 together with the support of density functional theory (DFT) calculations for spectral interpretation. A symmetry analysis of the DFT-predicted phonon eigenmodes indicates that δ-UO 3 should have two IR active modes and no Raman active modes. Experimental results, however, indicate significant Raman scattering from δ-UO 3 . We therefore propose four potential explanations for this apparent contradiction: a possible tetragonal distortion to the cubic cell, the existence of a surface impurity layer, vacancy scattering, and structural activation of Raman signal. We use powder X-ray diffraction and confocal Raman spectroscopy with depth profiling to investigate these possibilities and suggest future experiments to explore this phenomenon in more detail. Understanding the lattice dynamics of δ-UO 3 is important for identification of technogenic U phases via Raman and infrared spectroscopy and our results indicate that the simple understanding of δ-UO 3 as a high-symmetry cubic structure should be reconsidered.

98 NUCLEAR DISARMAMENT, SAFEGUARDS, AND PHYSICAL P↗

Incoherent electronic band states in Mn-substituted BaFe 2 As 2

Chemical substitution is commonly used to explore new ground states in materials, yet the role of disorder is often overlooked. In Mn-substituted BaFe 2 ⁢As 2 (MnBFA), superconductivity (SC) is absent, despite being observed for nominal hole-doped phases. Instead, a glassy magnetic phase emerges, associated with the S = 5/2 Mn local spins. In this work, we present a comprehensive investigation of the electronic structure of MnBFA using angle-resolved photoemission spectroscopy (ARPES). We find that Mn causes a small and orbital-specific reduction of the electron pockets, only partially disrupting nesting conditions. Based upon the analysis of the spectral properties, we observe, for all bands, an increase in the electronic scattering rate as a function of Mn content. This is interpreted as increasing band incoherence, which we propose as the primary contributor to the suppression of the magnetic order in MnBFA. Further, this finding connects the MnBFA electronic band structure properties to the glassy magnetic behavior observed in these materials and suggests that SC is absent because of the collective magnetic impurity behavior that scatters the Fe-derived excitations. Additionally, our analysis shows that the binding energy (E B ) dependence of the imaginary part of the self-energy [Im⁡Σ⁡(E B )] is best described by a fractional scaling (Im⁡Σ⁡(E B )∝$\sqrt-E_{B}$). These results indicate that Mn tunes MnBFA into an electronic disordered phase between the correlated Hund's metal in BaFe 2 ⁢As 2 and the Hund's insulator in BaMn 2 ⁢As 2 .

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Impact of dopant-induced band tails on optical spectra, charge carrier transport, and dynamics in single-crystal CdTe

Abstract Cadmium telluride (CdTe) semiconductors are used in thin-film photovoltaics, detectors, and other optoelectronic applications. For all technologies, higher efficiency and sensitivity are achieved with reduced charge carrier recombination. In this study, we use state-of-the-art CdTe single crystals and electro-optical measurements to develop a detailed understanding of recombination rate dependence on excitation and temperature in CdTe. We study recombination and carrier dynamics in high-resistivity (undoped) and arsenic (As)-doped CdTe by employing absorption, the Hall effect, time-resolved photoluminescence, and pump-probe in the 80–600 K temperature range. We report extraordinarily long lifetimes (30 µs) at low temperatures in bulk undoped CdTe. Temperature dependencies of carrier density and mobility reveal ionization of the main acceptors and donors as well as dominant scattering by ionized impurities. We also distinguish different recombination defects. In particular, shallow As Te and deep V Cd −As Cd acceptors were responsible for p-type conductivity. AX donors were responsible for electron capture, while nonradiative recombination centers (V Cd −As Te , As 2 precipitates), and native defects (V Cd −Te Cd ) were found to be dominant in p-type and n-type CdTe, respectively. Bimolecular and surface recombination rate temperature dependencies were also revealed, with bimolecular coefficient T −3/2 temperature dependence and 170 meV effective surface barrier, leading to an increase in surface recombination velocity at high temperatures and excitations. The results of this study allowed us to conclude that enhanced crucible rotation growth of As-doped CdTe is advantageous to As activation, leading to longer lifetimes and larger mobilities and open-circuit voltages due to lower absorption and trapping.

36 MATERIALS SCIENCE↗

Combined experimental-theoretical study of electron mobility-limiting mechanisms in SrSnO 3

The discovery and development of ultra-wide bandgap (UWBG) semiconductors is crucial to accelerate the adoption of renewable power sources. This necessitates an UWBG semiconductor that exhibits robust doping with high carrier mobility over a wide range of carrier concentrations. Here we demonstrate that epitaxial thin films of the perovskite oxide Nd x Sr 1 – x SnO 3 (SSO) do exactly this. Nd is used as a donor to successfully modulate the carrier concentration over nearly two orders of magnitude, from 3.7 × 10 18 cm –3 to 2.0 × 10 20 cm –3 . Despite being grown on lattice-mismatched substrates and thus having relatively high structural disorder, SSO films exhibited the highest room-temperature mobility, ~70 cm 2 V –1 s –1 , among all known UWBG semiconductors in the range of carrier concentrations studied. The phonon-limited mobility is calculated from first principles and supplemented with a model to treat ionized impurity and Kondo scattering. This produces excellent agreement with experiment over a wide range of temperatures and carrier concentrations, and predicts the room-temperature phonon-limited mobility to be 76–99 cm 2 V –1 s –1 depending on carrier concentration. This work establishes a perovskite oxide as an emerging UWBG semiconductor candidate with potential for applications in power electronics

36 MATERIALS SCIENCE↗

Effects of macroscopic inhomogeneities on electron mobility in semi-insulating GaAs

It is shown that defect inhomogeneities of sizes larger than the electron mean free path are responsible for the low values and anomalous temperature dependence of the electron mobility in semi-insulating (SI) GaAs. The room-temperature electron mobility values below about 6000 sq cm/V s cannot be uniquely used for the determination of the concentration of ionized defects, since the contribution from inhomogeneities usually exceeds that from scattering by ionized impurities. The effects of the macroscopically inhomogeneous distribution of residual acceptors and the major deep donor EL2 diminish at elevated temperatures between 600 and 900 K, which offers a means for identification of inhomogeneities, and furthermore explains recently reported steplike mobility versus temperature behavior in SI-GaAs.

Walukiewicz, W.↗

Ab initio ultrafast spin dynamics in solids

Spin relaxation and decoherence is at the heart of spintronics and spin-based quantum information science. Currently, theoretical approaches that can accurately predict spin relaxation of general solids including necessary scattering pathways and are capable of nanosecond to millisecond simulation time are urgently needed. We present a first-principles real-time density-matrix approach based on Lindblad dynamics to simulate ultrafast spin dynamics for general solid-state systems. Through the complete first-principles descriptions of pump, probe, and scattering processes including electron-phonon, electron-impurity, and electron-electron scatterings with self-consistent electronic spin-orbit couplings, our method can directly simulate the ultrafast pump-probe measurements for coupled spin and electron dynamics over nanoseconds at any temperatures and doping levels. We first apply this method to a prototypical system GaAs and obtain excellent agreement with experiments. We found that the relative contributions of different scattering mechanisms and phonon modes differ considerably between spin and carrier relaxation processes. In sharp contrast to previous work based on model Hamiltonians, we point out that the electron-electron scattering is negligible at room temperature but becomes dominant at low temperatures for spin relaxation in n-type GaAs. We further examine ultrafast dynamics in novel spin-valleytronic materials: monolayer and bilayer WSe 2 with realistic defects. We find that spin relaxation is highly sensitive to local symmetry and chemical bonds around defects. For the bilayer WSe 2 , we identify the scattering pathways in ultrafast dynamics and determine relevant dynamical properties, essential to its utilization of unique spin-valley-layer locking effects. In conclusion, our work provides a predictive computational platform for spin dynamics in solids, which has potential for designing new materials ideal for spintronics and quantum information technology.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Scattering of electron from a disk in 2D electron gas: Full cross section, transport cross section, and the interaction correction

It is known that the presence of the Fermi sea modifies the scattering of an electron from a point-like impurity. This is due to the Friedel oscillations of the electron density around the impurity. These oscillations create an additional scattering potential for incident electrons. The closer the energy of the incident electron to the Fermi level, the stronger the additional scattering. Here, we study this effect for the case when the impurity is not point-like but rather a hard disk, with a radius much bigger than the de Broglie wavelength. We start with a careful examination of the full and transport cross sections from an extended target. Both cross sections approach their limiting values upon increasing the wave vector of the incident electron. We establish that the transport cross section saturates much faster than the full cross section. With regard to the interaction correction, we establish that it vanishes for the full cross section, while for the transport cross section, it is enhanced compared to the case of a point-like scatterer.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Experimental and theoretical study of hole scattering in RF sputtered p-type Cu 2 O thin films

One of the key materials of interest for p-type oxide semiconductor thin film electronics is cuprous oxide (Cu 2 O), due to its relatively high hole mobility. Here, in this work, we use experiments, analytical models, and density functional theory calculations to study the scattering mechanisms that determine Hall mobility in two Cu 2 O samples. First, we examine a polycrystalline Cu 2 O thin film deposited by RF magnetron sputtering, and second, a single-crystalline Cu2O bulk substrate. Temperature-dependent Hall measurements indicate that neutral impurity and grain boundary scattering are dominant for the polycrystalline Cu 2 O thin film, while phonon scattering is dominant for single-crystalline Cu 2 O. Our first-principles calculations show that the room-temperature intrinsic hole mobility of Cu 2 O is 106 cm 2 V –1 s –1 , indicating the great promise of the material for p-type electronic devices. This intrinsic mobility is limited by phonon scattering, with the most dominant scattering modes having phonon energies of 88.4 and 17.1 meV. These results indicate that the key pathways to increase the hole mobility in Cu 2 O thin films are by reducing the impurity concentration and by increasing grain size. Our work thus sets the stage for the future development of high performance Cu 2 O-based p-type thin film transistors.

36 MATERIALS SCIENCE↗

Hund’s coupling mediated multi-channel quantum phase transition of a single magnetic impurity in Fe(Se, Te)

Understanding the interplay between individual magnetic impurities and superconductivity is crucial for bottom-up construction of novel phases of matter. Sub-gap bound states that are used in this endeavor are typically considered as independent entities that each result from the exchange scattering between the respective impurity orbitals and electrons of the superconducting condensate. Here we present experimental evidence of individual multi-spin impurities where the sub-gap states are not independent. Specifically, we find that by tuning the energy of the state closest to zero through zero, all other sub-gap states change particle-hole asymmetry as well. We show that this can be understood by including Hund’s coupling, which favors high-spin configurations, into a multi-orbital Anderson model. Unlike for the case of independent spins, the transition we observe signals the simultaneous departure of more than one quasiparticle from the impurity, while the parity of the ground state may remain unchanged. Our results show that Hund’s coupling is not only crucial in generating high-spin impurities, but also to understand the transition between two distinct ground states, and should therefore be taken into account for e.g. impurity-based band-structure engineering.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Critical fields of superconductors with magnetic impurities

The upper critical field H c2 , the field H c3 for nucleation of the surface superconductivity, and the thermodynamic field H c are evaluated within the weak-coupling theory for the isotropic s-wave case with arbitrary transport, and pair-breaking scattering. In this study, we find that, for the standard geometry of a half-space sample in a magnetic field parallel to the surface, the ratio $\mathscr{R}$=H c3 /H c2 is within the window 1.55≲$\mathscr{R}$≲2.34 , regardless of temperature or the scattering type. While the nonmagnetic impurities tend to flatten the $\mathscr{R}$($\mathrm{T}$) variation, magnetic scattering merely shifts the maximum of $\mathscr{R}$($\mathrm{T}$) to lower temperatures. Surprisingly, while reducing the transition temperature, magnetic scattering has a milder impact on $\mathscr{R}$ than nonmagnetic scattering. The surface superconductivity is quite robust; in fact, the ratio $\mathscr{R}$≈1.7 even in the gapless state. We used Eilenberger's energy functional to evaluate the condensation energy F c and the thermodynamic critical field H c for any temperature and scattering parameters. By comparing H c2 and H c , we find that, unlike transport scattering, the pair-breaking pushes materials toward type-I behavior. Furthermore, we find a peculiar behavior of F c as a function of the pair-breaking scattering parameter at the low-$\mathrm{T}$ transition from gapped to gapless phases, which has recently been associated with the topological transition in the superconducting density of states.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Determination of Molecular Structure and Dynamics of Molten Salts by Advanced Neutron and X-ray Scattering Measurements and Computer Modeling

The design and development of fully functional Molten-Salt Reactors (MSR) require detailed knowledge of the molten salt properties in order to understand and predict the salt’s behavior. Fundamental properties of interest include molecular structure, speciation, and dynamics (such as diffusion coefficients) of salt components and dissolved corrosion and fission products. Computer modeling is necessary to predict changes in physical and chemical properties due to irradiation, burning of dissolved fuel, and corrosion. The modeling requires experimental data, and advanced neutron and x-ray scattering and spectroscopy provide the most reliable and direct determination of the structure (Pair-Distribution Functions, PDF), and dynamics of ions in the melt. This project dealt with both fluoride and chloride salts. The PDFs have been measured by a combination of neutron and x-ray diffraction. We utilized the techniques of isotope substitutions, a very powerful tool available for neutron-scattering, to extract the details of the liquid structure. Although similar measurements have been done before, modern advanced neutron and x-ray-scattering techniques allow collecting the data at much higher resolution and in a wider range of temperatures. Importantly, we were among the first to study fluoride salts by neutron scattering. The importance of impurities and their effects on salt properties have become apparent recently and so new methods of salt purification were developed. We took advantage of these developments to produce reliable data, which have been used for computer simulations of both clean salts and those with added fission and corrosion products most relevant for MSRs. Ab initio molecular dynamics simulations have been performed to understand the multi-component liquid solution, in particular solubility of impurities and thermodynamic interactions in relation to the ionic-cluster structure of the fluid. We applied machine learning to regress from the simulation and experimental data in order to develop a fast-acting model that can handle molten salt with an arbitrary (≥ 10) number of chemical elements and be able to predict chemical potential as a function of composition and temperature. This project resulted in a number of experimental and computer-simulation publications, a patent application, and numerous conference presentations (American Physical Society, American Chemical Society, and The Electrochemical Society among others). Multiple students and postdocs participated and collaborated on aspects of this project. This project seeded new collaborations between MIT and other institutions, such as the University of Massachusetts Lowell, the University of Illinois Urbana-Champaign, the University of California Berkeley, and Oak Ridge and Los Alamos National Labs. As such, this project has had a broad and lasting impact beyond its original scientific scope.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗

Nucleation and growth of voids in shock loaded copper bicrystals

Understanding the evolution of damage and deformation due to spall at grain boundaries can provide a basis for connecting micro- to macroscale failure behavior in metals under extreme conditions. Copper bicrystal samples were shock loaded using flyer-plate impacts in a light gas gun with shock stresses ranging from 3 to 6 GPa. Pulse duration as well as crystal orientation along the shock direction were varied for a fixed boundary misorientation to determine their effects on void nucleation and coalescence. Samples were soft recovered and cross-sectioned to characterize damage using electron backscattering diffraction and scanning electron microscopy to gather information on damage characteristics at and around the GB, with emphasis on growth of boundary and bulk voids. Chemistry and composition analysis were also performed on samples to determine if trace elements present in a sample affected the threshold for void nucleation. Results show that the kinetics of damage growth at the boundary are strongly affected by stress level and impurities. It was found that the boundary selected had a similar or even lower tendency to show damage than the bulk at low pulse durations and amplitudes. As pulse duration and amplitude increased damage localized at the boundary, which was found to consist of many small voids, indicating that the boundary experienced rapid void nucleation and coalescence. Furthermore, the presence of impurities correlated strongly with scatter on damage evolution.

36 MATERIALS SCIENCE↗

Impact of a minority relativistic electron tail interacting with a thermal plasma containing high-atomic-number impurities

A minority relativistic electron component can arise in both laboratory and naturally-occurring plasmas. In the presence of high-atomic-number ion species, the ion charge state distribution at low bulk electron temperature can be dominated by relativistic electrons, even though their density is orders of magnitude lower. This is due to the relativistic enhancement of the collisional excitation and ionization cross sections. The resulting charge state effect can dramatically impact the radiative power loss rate and the related Bethe stopping power of relativistic electrons in a dilute plasma.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Identification of a nematic pair density wave state in Bi 2 Sr 2 CaCu 2 O 8+x

Electron-pair density wave (PDW) states are now an intense focus of research in the field of cuprate correlated superconductivity. PDWs exhibit periodically modulating superconductive electron pairing that can be visualized directly using scanned Josephson tunneling microscopy (SJTM). Although from theory, intertwining the d-wave superconducting (DSC) and PDW order parameters allows a plethora of global electron-pair orders to appear, which one actually occurs in the various cuprates is unknown. In this work, we use SJTM to visualize the interplay of PDW and DSC states in Bi 2 Sr 2 CaCu 2 O 8+x at a carrier density where the charge density wave modulations are virtually nonexistent. Simultaneous visualization of their amplitudes reveals that the intertwined PDW and DSC are mutually attractive states. Then, by separately imaging the electron-pair density modulations of the two orthogonal PDWs, we discover a robust nematic PDW state. Its spatial arrangement entails Ising domains of opposite nematicity, each consisting primarily of unidirectional and lattice commensurate electron-pair density modulations. Further, we demonstrate by direct imaging that the scattering resonances identifying Zn impurity atom sites occur predominantly within boundaries between these domains. This implies that the nematic PDW state is pinned by Zn atoms, as was recently proposed [Lozano et al., Phys. Rev. B 103, L020502 (2021)]. Taken in combination, these data indicate that the PDW in Bi 2 Sr 2 CaCu 2 O 8+x is a vestigial nematic pair density wave state [Agterberg et al. Phys. Rev. B 91, 054502 (2015); Wardh and Granath arXiv:2203.08250].

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗