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Results for “interface characterization”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 73 records · Page 4
All sourcesNASA NTRSDOE OSTI
DOE OSTI2026

Buried Interfaces in Organic Photocathodes for H 2 Evolution: Fermi-Level Pinning and Recombination

Herein, we demonstrate how Fermi-level pinning at buried contacts impacts solar fuel generation in all-polymer photocathodes by systematically comparing the effects of work function, hydroxyl coverage, and hydrogen evolution using chemically modified indium tin oxide (ITO) supports. Photovoltages and net photocathode performance are improved when the ITO is passivated using phosphonic acids, independent of work function, suggesting that the passivation reduces Fermi-level pinning at the buried interface arising from blended heterojunction interactions with surface metal hydroxyls. Transient photovoltage decay reveals differences in recombination mechanisms, supported by light intensity-dependent measurements. Briefly, nonpassivated, hydrophilic contacts exhibit trap-assisted recombination, while passivated, hydrophobic contacts follow bimolecular recombination. We then investigate changes in electroactivity of hole-transfer processes as a function of scan rate and repetitive cycling using a diffusion-controlled molecular redox probe, analogous to a hole-only device achieved via the electrolyte. The nonpassivated buried contacts exhibit higher overpotentials for oxidation, indicative of hole injection/extraction barriers. We observe irreversible electron transfer via the hole-transport level of the blended heterojunction and a strong cycle dependence, consistent with changes in the hole trap state density. Passivation results in more reversible redox behaviors, consistent with more Ohmic-like contacts. Collectively, these results provide context toward the realization of durable organic photoelectrodes with optimized photovoltages and net solar-to-hydrogen conversion efficiencies via fundamental understanding of the rates of carrier generation, recombination, and transport in high-dielectric aqueous environments and opportunities to characterize buried interfaces under device-relevant electric fields.

buried interfaces↗
DOE OSTI2025

Tuning Kinetic Inductance with Doping in Superconducting Electron Gases at the KTaO 3 (111) Interface

We used coplanar waveguide resonators fabricated from the two-dimensional superconductor formed at KTaO 3 (111) interfaces to characterize the superconductor’s sheet kinetic inductance L K/□ . Upon varying the carrier density, in samples with T c ranging from 0.62 to 1.81 K, we can tune L K/□ between 1.88 and 7.42 nH/□ at the lowest temperatures, exceeding the highest values reported for granular aluminum films. The temperature dependence of L K/□ is consistent with a superconducting gap without nodes. The high L K/□ of superconducting KTaO 3 (111) interfacial electron gases combined with the high dielectric constant of KTaO 3 results in resonators with exceedingly low phase velocities (“slow light”) and small mode volumes. In addition, superconducting KTaO 3 (111) interfacial electron gases are robust in magnetic fields well above a Tesla. In conclusion, these features can enable unique device applications in superconducting electronics and quantum information science.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2025

Evidence for I 2 loss from the perovskite–gas interface upon light-induced halide segregation

Sunlight-induced halide segregation in (CH 3 NH 3 )Pb(Br x I 1−x ) 3 (1 > x > 0.2), which limits obtainable voltages from solar cells with these perovskite absorbers, reverses upon resting in the dark. However, sustained illumination at ca. 1 sun opens a new decomposition pathway, leading to irreversible I 2 loss in an open system. We conclusively show I 2 off-gassing from halide-segregated (CH 3 NH 3 )Pb(Br 0.75 I 0.25 ) 3 by trapping gaseous I 2 and tracking the electronic conductivity of the perovskite, which increases from electron-doping as iodides are oxidized to iodine. Importantly, we show that this reaction occurs across the perovskite-air solid–gas interface, without confounding effects from solvent or reactive solid interfaces. This characterization was conducted under a nitrogen atmosphere, avoiding vacuum- and oxygen-driven I 2 loss pathways. Consistent observations of I 2 loss upon light-soaking CsPb(Br 0.75 I 0.25 ) 3 films show that this reaction is intrinsic to the inorganic framework. We propose that the disruption of iodide-rich domains in the halide-segregated films through I 2 loss can masquerade as a light-induced healing or apparent remixing of the segregated film, when in fact it leads to irreversible decomposition. Although I 2 off-gassing is less likely in bromide-rich solid solutions, light-induced halide segregation brings the iodides into proximity and forms electronic states that are energetically poised to trap and accumulate holes, providing a driving force for I 2 loss. Thus, even bromide-rich mixed-halide perovskite absorbers will benefit from I 2 -impermeable encapsulation for long-term stability.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2026

Industrial deposition of wavelength-shifting films for liquid argon photon detection systems

The Deep Underground Neutrino Experiment (DUNE) Phase-II Far Detector is considering an approximately 2000 m 2 photon detection system to achieve a target mean light yield of 180 PE/MeV. Meeting this requirement demands scalable, cost-effective, and high-quality wavelength-shifter (WLS) coatings capable of converting 127 nm liquid-argon scintillation light into visible photons with controlled and reproducible optical performance. We report on the successful realization of an industrial physical vapor deposition (PVD) process forp-terphenyl (pTP) coatings, adapted from vacuum deposition techniques developed for OLED display manufacturing, to produce uniform WLS layers on large-area inorganic substrates, a task traditionally challenged by adhesion and uniformity issues at organic-inorganic interfaces. Surface characterization by profilometry and spectroscopic measurements demonstrates edge-region thickness variation below 10% and emission spectra consistent with high-quality pTP reference samples. The industrial process demonstrates reproducibility, scalability, and significantly reduced production time compared to laboratory-based methods, while maintaining optical characteristics consistent with established pTP reference samples. These results establish a viable pathway for mass production of high-performance pTP coatings for DUNE FD3 and future neutrino experiments, from a coating manufacturing and process standpoint. Detector-level performance validation, including quantitative VUV conversion efficiency measurements at 127 nm, is identified as future work.

47 OTHER INSTRUMENTATION↗
NASA NTRS1984

Effect of Interfacial characteristics of metal clad polymeric substrates on electrical high frequency interconnection performance

Etched metallic conductor lines on metal clad polymeric substrates are used for electronic component interconnections. Significant signal losses are observed for microstrip conductor lines used for interconnecting high frequency devices. At these frequencies, the electronic signal travels closer to the metal-polymer interface due to the skin effect. Copper-teflon interfaces were characterized by scanning electron microscopy (SEM) and Auger electron spectroscopy (AES) to determine the interfacial properties. Data relating roughness of the copper film to signal losses was compared to theory. Films used to enhance adhesion are found, to contribute to these losses.

Bhasin, K. B.↗
NASA NTRS1985

Customer and mission influence on space station architecture

Overall Space Station architecture is presented in schematic outlines and plans. How the customer and mission needs influence this design is studied. The uses, occupants, activities, interfaces, utilities, locomotion, environments, and technological costs are all factors which influence the architecture. User and system functions are profiled, interfaces are characterized and functions are grouped. These lead to packaging of functions into modules and the design of system and user accommodations.

Runge, F. C.↗
NASA NTRS1997

ZnSe Window Layers for GaAs and GaInP2 Solar Cells

This report concerns studies of the use of n-type ZnSe as a window layer for n/p GaAs and GaInP2 solar cells. Emphasis was placed in this phase of the project on characterizing the interface between n-type ZnSe films grown on epi-GaAs films grown onto single crystal GaAs. Epi-GaAs and heteroepitaxial ZnSe films were grown by MOCVD with a Spire 50OXT Reactor. After growing epitaxial GaAs films on single crystal GaAs wafers, well-oriented crystalline ZnSe films were grown by MOCVD. ZnSe films were grown with substrate temperatures ranging from 250 C to 450 C. Photoluminescence studies carried out by researchers at NASA Lewis determined that the surface recombination velocity at a GaAs surface was significantly reduced after the deposition of a heteroepitaxial layer of ZnSe. The optimum temperature for ZnSe deposition appears to be on the order of 350 C.

Olsen, Larry C.↗
NASA NTRSDate not supplied

Multidisciplinary Dynamic Testing Challenges in Validating the NASA Artemis Architecture

NASA is in the midst of bold and exciting next steps in human exploration and spaceflight. The designs of the new Space Launch System (SLS), the Orion spacecraft and the Exploration Ground Systems (EGS) for vehicle processing and launch are essentially complete and there has been significant progress in manufacturing and assembly of specific hardware for the Artemis I and Artemis II missions. Equally as important, the program level and integrated system level testing and analyses are also well underway to support integrated verification, validation, and certificate of flight readiness (CoFR) for the first Artemis mission. Testing and analysis are key to addressing technical challenges that the Artemis missions offer. Building block approaches are required that provide the right balance between component, system, and/or element level testing that satisfies verification and validation objectives and where, uncertainties are quantified and minimized. Artemis I is a system of systems that requires a fusion of test and analysis that adeptly characterizes critical interfaces between major program elements. NASA is implementing new in-situ testing that fuse traditional aerospace structures with civil structures, such as the Integrated Modal Test for the Artemis I vehicle where the Mobile Launcher and Crawler Transporter serve as a support structure whose dynamics couple with that of the Artemis I vehicle. This new paradigm requires a closer inspection of structural behavior of the Crawler Transporter and the Mobile Launcher as they now serve multiple purposes. This requires a paradigm shift to look beyond experimental modal techniques and incorporates operational modal analysis techniques to validate dynamic models from data collected during rollout to the launch pad. A further complicating factor is the Crawler Transporter generated ground forces have numerous harmonics making extracting dynamic responses of the Artemis I, Mobile Launcher, and Crawler Transporter coupled system challenging. This discussion explores all these challenges with and attempts to understand how we best build confidence in systems and system-of-systems performance capabilities and margins and understand uncertainties.

Joel W Sills↗
NASA NTRS1980

Improved characterization of the Si-SiO2 interface

Refined quasi-static and conductance methods, based on effectively thin composite insulating layers, low-carrier-concentration bulk semiconductors, and low-level illumination, have been applied to an improved characterization of the (100) Si-SiO2 interface. Accurate measurement of both the total density of interface states and its major components as a function of energy in the forbidden gap have been made over four decades (10-billion to 100-trillion states/eV sq cm) on a single sample. The normal U-shaped density of states is resolved into separate valence- and conduction-band-derived contributions as well as impurity-derived contributions corresponding to concentrations on the order of 20 ppm at the interface.

Su, P.↗
NASA NTRS1999

Characterization of In-Situ BN Interface Formed by Nitridation of Nextel 312

Treatment of Nextel (TM) 312 in a reactive environment has been used as a low cost approach to the formation of BN on the fiber surface. Although the BN enriched surface region is extremely thin (less than 40 run), it is effective in providing debonding and composite behavior. Variation in mechanical behavior of Nextel (TM) 312/BN/Blackglas (TM) composites has been noted among panels fabricated with AF-10 cloth treated in different nitridation runs, Understanding this variation became the rationale for undertaking a detailed characterization of the nitrided fiber using field emission scanning electron microscopy, low voltage energy dispersive x-ray and Auger electron spectroscopy. Chemical composition and surface morphology are discussed in relation to observed mechanical behavior of NeXtel (TM) 312/Blackglas (TM) composites tested in bending.

Hurwitz, Fances I.↗
NASA NTRS1988

Auger analysis of a fiber/matrix interface in a ceramic matrix composite

Auger electron spectroscopy (AES) depth profiling was used to characterize the fiber/matrix interface of an SiC fiber, reaction bonded Si3N4 matrix composite. Depth profiles of the as received double coated fiber revealed concentration oscillations which disappeared after annealing the fiber in the environment used to fabricate the composite. After the composite was fractured, the Auger depth profiles showed that failure occurred in neither the Beta-SiC fiber body nor in the Si3N4 matrix but, concurrently, at the fiber coating/matrix interface and within the fiber coating itself.

Honecy, Frank S.↗
NASA NTRS1988

Auger analysis of a fiber/matrix interface in a ceramic matrix composite

Auger electron spectroscopy (AES) depth profiling was used to characterize the fiber/matrix interface of an SiC fiber, reaction bonded Si3N4 matrix composite. Depth profiles of the as received double coated fiber revealed concentration oscillations which disappeared after annealing the fiber in the environment used to fabricate the composite. After the composite was fractured, the Auger depth profiles showed that failure occurred in neither the Beta-SiC fiber body nor in the Si3N4 matrix but, concurrently, at the fiber coating/matrix interface and within the fiber coating itself.

Honecy, Frank S.↗
NASA NTRS1985

Electrical characterization of plasma-grown oxides on gallium arsenide

Plasma-grown GaAs oxides and their interfaces have been characterized by measuring the electrical properties of metal-oxide-semiconductor capacitors and of Schottky junctions. The current transport mechanism in the oxide at high electrical field was found to be Frankel-Poole emission, with an electron trap center at 0.47 eV below the conduction band of the oxide. The interface-state density, evaluated from capacitance and conductance measurements, exhibits a U-shaped interface-state continuum extending over the entire band gap. Two discrete deep states with high concentration are superimposed on this continuum at 0.40 and 0.70 eV below the conduction band. The results obtained from measurements on Schottky junctions have excluded the possibility that these two deep states originate from plasma damage. Possible origins of these states are discussed in this paper.

Hshieh, F. I.↗
NASA NTRS1984

LEED and AES characterization of the GaAs(110)-ZnSe interface

In this paper, a study is conducted of the composition and structure of epitaxial ZnSe films grown by congruent evaporation on GaAs(110) at a rate of 2 A/min. It is found that the films grown on 300 C GaAs are nearly stoichiometric and form an abrupt interface with the substrate. Films grown at higher temperature (T greater than 350-400 C) are Se rich. The crystallinity of films grown at 300 C is good and their surface atomic geometry is identical to that of a ZnSe crystal. The GaAs-ZnSe interface geometry seems to be dominated by the Se-substrate bonds. The adsorption of Se, during the formation of very thin ZnSe films (2-3 A), produces a (1 x 2) LEED pattern and modifications of the LEED I-V profiles, which probably indicate a change in the substrate atomic relaxation.

Tu, D.-W.↗
NASA NTRS1989

Ballistic-electron-emission microscopy investigation of Schottky barrier interface formation

Ballistic-electron-emission microscopy (BEEM) has been used to investigate the origin of defects at the Au/GaAs(100) Schottky barrier interface. In addition, molecular beam epitaxy (MBE) and in situ fabrication methods have been employed to control Schottky barrier interface properties. BEEM characterization combined with MBE methods has enabled the development of a near-ideal Schottky barrier interface with drastically reduced defect density.

Hecht, M. H.↗
NASA NTRS1988

Process dependent morphology of the Si/SiO2 interface measured with scanning tunneling microscopy

A new experimental technique to determine Si/SiO2 interface morphology is described. Thermal oxides of silicon are chemically removed, and the resulting surface topography is measured with scanning tunneling microscopy. Interfaces prepared by oxidation of Si (100) and (111) surfaces, followed by postoxidation anneal (POA) at different temperatures, have been characterized. Correlations between interface structure, chemistry, and electrical characteristics are described.

Hecht, Michael H.↗
NASA NTRS1991

Transverse ductility of metal matrix composites

The role of the fiber matrix interface bond on the transverse ductility of continuous fiber reinforced composites has been investigated. Two specific systems have been considered: an Aluminum alloy matrix reinforced by Alumina fibers, characterized by a strong interface and a Titanium alloy reinforced by coated Silicon Carbide fibers, characterized by a weak interface. A micro-mechanical study indicates that the bond condition has a significant effect on the state of stress in the matrix which in turn dictates the available matrix ductility. The micro-mechanical predictions are in good agreement with the experimental results for the two systems.

Gunawardena, S. R.↗