Search NASA⌕ Search

SEARCH · Search NASA

Results for “interlayer coupling”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 73 records · Page 4
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Photo-induced non-collinear interlayer RKKY coupling in bulk Rashba semiconductors

Abstract The interplay between light-matter, spin-orbit, and magnetic interactions allows the investigation of light-induced magnetic phenomena that are otherwise absent without irradiation. We present our analysis of light-driven effects on the interlayer exchange coupling mediated by a bulk Rashba semiconductor in a magnetic multilayer. The collinear magnetic exchange coupling mediated by the photon-dressed spin-orbit coupled electrons of BiTeI develops light-induced oscillation periods and displays new decay power laws, both of which are enhanced with an increasing light-matter coupling. For magnetic layers with non-collinear magnetization, we find a non-collinear magnetic exchange coupling uniquely generated by light-driving of the multilayer. As the non-collinear magnetic exchange coupling mediated by the photon-dressed electrons of BiTeI is unique to the irradiated system and it is enhanced with increasing light-matter coupling, this effect offers a promising platform of investigation of light-driven effects on magnetic phenomena in spin-orbit coupled systems. In this platform, light properties, such as its intensity, can serve as external knobs for inducing non-collinear couplings of the interlayer exchange and for modulating the collinear couplings. Both of these effects signify the photo-generated modification in the spin textures of spin-orbit coupled electrons in BiTeI.

Physics↗
DOE OSTI2016

Thermally assisted interlayer magnetic coupling through Ba{sub 0.05}Sr{sub 0.95}TiO{sub 3} barriers

We report on the interlayer exchange coupling across insulating barriers observed on Ni{sub 80}Fe{sub 20}/Ba{sub 0.05}Sr{sub 0.95}TiO{sub 3}/La{sub 0.66}Sr{sub 0.33}MnO{sub 3} (Py/BST{sub 0.05}/LSMO) trilayers. The coupling mechanism has been analyzed in terms of the barrier thickness, samples' substrate, and temperature. We examined the effect of MgO (MGO) and SrTiO{sub 3} (STO) (001) single-crystalline substrates on the magnetic coupling and also on the magnetic anisotropies of the samples in order to get a deeper understanding of the magnetism of the structures. We measured a weak coupling mediated by spin-dependent tunneling phenomena whose sign and strength depend on barrier thickness and substrate. An antiferromagnetic (AF) exchange prevails for most of the samples and smoothly increases with the barrier thicknesses as a consequence of the screening effects of the BST{sub 0.05}. The coupling monotonically increases with temperature in all the samples and this behavior is attributed to thermally assisted mechanisms. The magnetic anisotropy of both magnetic components has a cubic symmetry that in the case of permalloy is added to a small uniaxial component.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2018

Coupling-Assisted Renormalization of Excitons and Vibrations in Compressed MoSe 2 –WSe 2 Heterostructure

Vertical heterostructures (HSs) constructed with two-dimensional (2D) materials is expected to generate fascinating properties due to interlayer coupling between neighboring layers. However, interlayer coupling can be easily obscured by cross-contamination during transfer processes, rendering their experimental demonstration challenging. Here, we explore the coupling-assisted renormalization of excitons and vibrations in a mechanically fabricated MoSe 2 –WSe 2 HS through high-pressure photoluminescence, Raman spectra, and density functional theory calculations. Accompanied by the interlayer coupling enhancement, the excitonic and vibrational renormalizations involving dimensionality and composition variations were achieved. A cycle of 2D–3D–2D excitonic evolution was disclosed and pressure-induced emergence of X – exciton of MoSe 2 in HS was found reflecting the band structure transition in the MoSe 2 –WSe 2 HS. The Raman spectra reveals that the coupled A 2 " vibrations of WSe 2 and MoSe 2 in HS was stiffened and out-of-plane A 1 ' vibrations of WSe 2 and MoSe 2 in HS got coherent upon pressure modulation. Here, this coupling-assisted renormalization in MoSe 2 –WSe 2 HS can be extended to other 2D layered HSs, which indicates the possibility to design a flexible HS with controlled excitonic and vibrational system for light-emitting diodes, excitonic, and photovoltaic devices.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2015

Experimental determination of next-nearest-neighbor interlayer exchange coupling in ferromagnetic GaMnAs/GaAs:Be multilayers

We report direct experimental determination of next-nearest-neighbor (NNN) interlayer exchange coupling (IEC) in antiferromagnetically coupled GaMnAs/GaAs:Be multilayers. Magnetoresistance in such multilayers shows step-like transitions as a function of applied magnetic field that corresponds to abrupt changes of spin configuration. By adjusting the field range, one obtains minor hysteresis loops that allow one to determine spin configurations occurring in the multilayer, which in turn can be used to obtain the ratio of NNN IEC to NN IEC. By using this method on a series of GaMnAs/GaAs:Be with different numbers of GaMnAs layers, we obtain this ratio to be 0.23, in good agreement with theoretical predictions.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Joint perpendicular anisotropy and strong interlayer exchange coupling in systems with thin vanadium spacers

We study the influence of the insertion of a vanadium spacer layer between an FeCoB layer and a [Co/Ni] multilayer in an MgO substrate-based system mimicking the reference system of a perpendicular anisotropy magnetic tunnel junction. The anisotropy of the [Co/Ni] multilayer gradually improves with the vanadium thicknesses t, up to an optimized state for t = 8 Å, with little influence of the thermal annealing. The interlayer exchange coupling is ferromagnetic and very strong for t≤6 Å. It can be adjusted by thermal treatment at t = 8 Å from no coupling in the as-grown state to more than 2 mJ/m{sup 2} after 250 °C annealing. For this spacer thickness, the magnetic properties are consistent with the occurrence of a bcc (001) to an fcc (111) crystalline structure transition at the vanadium spacer. The remaining interlayer exchange coupling at t = 8 Å is still substantially higher than the one formerly obtained with a Tantalum spacer, which holds promise for further optimization of the reference layers of tunnel junctions meant for magnetic random access memories.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2019

Interlayer Exchange Coupling in Magnetic Hard-Soft Bilayered Structures

Broadband ferromagnetic resonance (FMR) and high-temperature (T) FMR measurements are carried out to study interlayer exchange coupling (IEC) in a magnetic hard-soft bilayered system where the hard layer is a FePt thin film with strong perpendicular anisotropy and the soft layer is a thin film made of Fe, Co, or their alloys. The data indicate that the effective exchange field (H ex ) produced by the IEC on the soft layer increases with a decrease in the thickness or saturation induction (4πM s ) of the soft layer. With an increase in T, H ex drops by an amount larger than 4πM s . The effective damping constant of the soft layer increases with H ex and can vary by two orders of magnitude. In samples with H ex > 4πM s , the damping constant is insensitive to the choice of material of the soft layer. In samples with H ex < 4πM s , the damping constant strongly depends on the choice of material. When T is increased from room temperature to the Curie temperature of the hard layer, the FMR linewidth drops significantly in samples where H ex is relatively large, but remains constant or even increases slightly at high T in samples where H ex is very small. Furthermore, the effects of H ex on the damping and linewidth can be understood by considering two distinct components in the overall damping, an intrinsic component mainly due to spin-flip magnon-electron scattering and an extrinsic component due to IEC-associated spin pumping at the interface.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2017

Magnetic resonance studies of three-layer FeNi/Bi/FeNi films

The interlayer coupling in three-layer FeNi/Bi/FeNi films is studied by electron magnetic resonance. The magnetic anisotropy at the permalloy–bismuth interface is shown to play a significant role in the formation of the magnetic state of the film structure. The interlayer coupling oscillation period is found to be about 8 nm. The interlayer coupling and the interface anisotropy and their temperature dependences are determined.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2019

Skyrmion Emergence Mediated by Antiferromagnetic Interlayer Exchange Coupling

Skyrmions are considered as topologically protected magnetic textures; they are covering a large area of applications. In this work, we studied using micromagnetic simulations the emergence of skyrmions in a nanodisk stacked in a FM/NM/FM multilayer system. We show how the skyrmion is formed through the antiferromagnetic interlayer exchange coupling (IEC). We also show the impact of the IEC on skyrmion size in both layers. We try as a conclusion to identify the range of IEC where skyrmions could exist in such systems.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2021

Resonance-Enhanced Excitation of Interlayer Vibrations in Atomically Thin Black Phosphorus

The strength of interlayer coupling critically affects the physical properties of 2D materials such as black phosphorus (BP), where the electronic structure depends sensitively on layer thickness. Rigid-layer vibrations reflect directly the interlayer coupling strength in 2D van der Waals solids, but measurement of these characteristic frequencies is made difficult by sample instability and small Raman scattering cross sections in atomically thin elemental crystals. Here, we overcome these challenges in BP by performing resonance-enhanced low-frequency Raman scattering under an argon-protective environment. Interlayer breathing modes for atomically thin BP were previously unobservable under conventional (nonresonant) excitation but became strongly enhanced when the excitation energy matched the sub-band electronic transitions of few-layer BP, down to bilayer thicknesses. The measured out-of-plane interlayer force constant was found to be 10.1 × 10 19 N/m 3 in BP, which is comparable to graphene. Accurate characterization of the interlayer coupling strength lays the foundation for future exploration of BP twisted structures and heterostructures.

interlayer interaction↗
DOE OSTI2023

Emergent Halperin–Saslow mode, gauge glass and quenched disorders in quantum Ising magnet TmMgGaO 4

Quenched disorders could bring novel quantum excitations and models to certain quantum magnets. Motivated by recent experiments on the quantum Ising magnet TmMgGaO 4 , we explore the effects of the quenched disorder and the interlayer coupling in this triangular lattice Ising antiferromagnet. It is pointed out that the weak quenched (nonmagnetic) disorder would convert the emergent 2D Berezinskii–Kosterlitz–Thouless (BKT) phase and the critical region into a U(1) gauge glass. There will be an emergent Halperin–Saslow mode associated with this gauge glass. Using the Imry-Ma’s renormalization group result, we explain the fate of the finite-field [Formula: see text] symmetry breaking transition at the low temperatures. The ferromagnetic interlayer coupling would suppress the BKT phase and generate a tiny ferromagnetism. With quenched disorders, this interlayer coupling changes the 2D gauge glass into a 3D gauge glass, and the Halperin–Saslow mode persists. This work merely focuses on addressing a phase regime in terms of emergent U(1) gauge glass behaviors and hope to inspire future works and thoughts in weakly disordered frustrated magnets in general.

Physics↗
DOE OSTI2019

Field-free Magnetization Switching by Utilizing the Spin Hall Effect and Interlayer Exchange Coupling of Iridium

Magnetization switching by spin-orbit torque (SOT) via spin Hall effect represents as a competitive alternative to that by spin-transfer torque (STT) used for magnetoresistive random access memory (MRAM), as it doesn’t require high-density current to go through the tunnel junction. For perpendicular MRAM, however, SOT driven switching of the free layer requires an external in-plane field, which poses limitation for viability in practical applications. Here we demonstrate field-free magnetization switching of a perpendicular magnet by utilizing an Iridium (Ir) layer. The Ir layer not only provides SOTs via spin Hall effect, but also induce interlayer exchange coupling with an in-plane magnetic layer that eliminates the need for the external field. Such dual functions of the Ir layer allows future build-up of magnetoresistive stacks for memory and logic applications. Experimental observations show that the SOT driven field-free magnetization reversal is characterized as domain nucleation and expansion. Micromagnetic modeling is carried out to provide in-depth understanding of the perpendicular magnetization reversal process in the presence of an in-plane exchange coupling field.

Science & Technology - Other Topics↗
DOE OSTI2022

Large change of interlayer vibrational coupling with stacking in Mo 1-x W x Te 2

Stacking variations in quasi-two-dimensional materials can have an important influence on material properties, such as changing the topology of the band structure. Unfortunately, the weakness of van der Waals (vdW) interactions makes it difficult to compute the stacking dependence of properties, and even in a material as simple as graphite the stacking energetics remain unclear. Mo 1 - x W x Te 2 is a material in which three differently stacked phases are conveniently accessible by temperature changes: 1 T ' , T d * , and the reported Weyl semimetal phase T d . Additionally, the transitions proceed via layer sliding, and the corresponding interlayer shear mode (ISM) is relevant not just for the stacking energetics but also for understanding the relationship between Weyl physics and structural changes. However, the interlayer interactions of Mo 1 - x W x Te 2 are not well understood, with wide variation in computed properties. We report inelastic neutron scattering of the ISM in a Mo 0.91 W 0.09 Te 2 crystal. The ISM energies are generally consistent with the linear chain model, as expected given the weak interlayer interaction, though there are some discrepancies from predicted intensities. However, the interlayer force constants K x in the T d * and 1 T ' phases are substantially weaker than that of T d at 75(3) and 83(3)%, respectively. Considering that the relative positioning of atoms in neighboring layers is approximately the same regardless of overall stacking, our results suggest that longer-range influences, such as stacking-induced electronic band-structure changes, may be responsible for the substantial change in the interlayer vibrational coupling and thus the C 55 elastic constant. These findings should elucidate the stacking energetics of Mo 1 - x W x Te 2 and other vdW layered materials.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2019

Interlayer RKKY coupling in bulk Rashba semiconductors under topological phase transition

The bulk Rashba semiconductors BiTeX (X=I, Cl and Br) with intrinsically enhanced Rashba spin-orbit coupling provide a new platform for investigation of spintronic and magnetic phenomena in materials. We theoretically investigate the interlayer exchange interaction between two ferromagnets deposited on opposite surfaces of a bulk Rashba semiconductor BiTeI in its trivial and topological insulator phases. In the trivial phase BiTeI, we find that for ferromagnets with a magnetization orthogonal to the interface, the exchange coupling is reminiscent of that of a conventional three-dimensional metal. Remarkably, ferromagnets with a magnetization parallel to the interface display a magnetic exchange qualitatively different from that of conventional three-dimensional metal due to the spin-orbit coupling. In this case, the interlayer exchange interaction acquires two periods of oscillations and decays as the inverse of the thickness of the BiTeI layer. For topological BiTeI, the magnetic exchange interaction becomes mediated only by the helical surface states and acts between the one-dimensional spin chains at the edges of the sample. The surface state-mediated interlayer exchange interaction allows for the coupling of ferromagnets with non-collinear magnetization and displays a decay power different from that of trivial BiTeI, allowing the detection of the topological phase transition in this material. Our work provides insights into the magnetic properties of these newly discovered materials and their possible functionalization.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Electronic cooling via interlayer Coulomb coupling in multilayer epitaxial graphene

In van der Waals bonded or rotationally disordered multilayer stacks of two-dimensional (2D) materials, the electronic states remain tightly confined within individual 2D layers. As a result, electron–phonon interactions occur primarily within layers and interlayer electrical conductivities are low. In addition, strong covalent in-plane intralayer bonding combined with weak van der Waals interlayer bonding results in weak phonon-mediated thermal coupling between the layers. We demonstrate here, however, that Coulomb interactions between electrons in different layers of multilayer epitaxial graphene provide an important mechanism for interlayer thermal transport, even though all electronic states are strongly confined within individual 2D layers. This effect is manifested in the relaxation dynamics of hot carriers in ultrafast time-resolved terahertz spectroscopy. We develop a theory of interlayer Coulomb coupling containing no free parameters that accounts for the experimentally observed trends in hot-carrier dynamics as temperature and the number of layers is varied.

42 ENGINEERING↗
DOE OSTI2017

Low-Frequency Shear and Layer-Breathing Modes in Raman Scattering of Two-Dimensional Materials

Ever since the isolation of single-layer graphene in 2004, two-dimensional layered structures have been among the most extensively studied classes of materials. To date, the pool of two-dimensional materials (2DMs) continues to grow at an accelerated pace and already covers an extensive range of fascinating and technologically relevant properties. An array of experimental techniques have been developed and used to fully characterize and understand these properties. In particular, Raman spectroscopy has proven to be a key experimental technique, thanks to its capability to identify minute structural and electronic effects in nondestructive measurements. While high-frequency (HF) intralayer Raman modes have been extensively employed for 2DMs, recent experimental and theoretical progress has demonstrated that low-frequency (LF) interlayer Raman modes are more effective at determining layer numbers and stacking configurations, and provide a unique opportunity to study interlayer coupling. These advantages are due to 2DMs’ unique interlayer vibration patterns where each layer behaves as an almost rigidly moving object with restoring forces corresponding to weak interlayer interactions. Compared to HF Raman modes, the relatively small attention originally devoted to LF Raman modes is largely due to their weaker signal and their proximity to the strong Rayleigh line background, which previously made their detection challenging. Recent progress in Raman spectroscopy with technical and hardware upgrades now makes it possible to probe LF modes with a standard single-stage Raman system and has proven crucial to characterize and understand properties of 2DMs. Here, we present a comprehensive and forward-looking review on the current status of exploiting LF Raman modes of 2DMs from both experimental and theoretical perspectives, revealing the fundamental physics and technological significance of LF Raman modes in advancing the field of 2DMs. We review a broad array of materials, with varying thickness and stacking configurations, discuss the effect of in-plane anisotropy, and present a generalized linear chain model and interlayer bond polarizability model to rationalize the experimental findings. We also discuss the instrumental improvements of Raman spectroscopy to enhance and separate LF Raman signals from the Rayleigh line. Lastly, we highlight the opportunities and challenges ahead in this fast-developing field.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Interlayer Interactions in Twisted WSe 2 /WS 2 Bilayer Heterojunctions: Synthesis, Characterization, and Modeling

Twisting adjacent layers in van der Waals solids can significantly alter their interlayer interactions for tunable optical and electronic properties. Here, we report theoretical calculations, fabrication, and detailed characterizations of WSe 2 /WS 2 bilayer heterojunctions with various twist angles that were synthesized by artificially stacking monolayers of CVD-grown WS 2 and WSe 2 . Density functional calculations predicted the formation of type-II heterojunctions for the stamped bilayers, with band structures that strongly depend on the interlayer twist angle. Raman spectroscopy reveals strong interlayer coupling with the appearance of a layer-number sensitive mode of WS 2 at 311 cm -1 in WSe 2 /WS 2 bilayers. This strong interlayer coupling resulted in a 1~2 order of magnitude quenching of the photoluminescence. The broadening and shifts were observed in micro-absorption spectroscopy of WSe 2 /WS 2 bilayers, which resulted in a net ~10% enhancement in integrated absorption strength across the visible spectrum with respect to the sum of the individual monolayer spectra. The observed 24 4 meV broadening of the WSe 2 A-exciton absorption band in the bilayers provided an estimate on the rate of charge transfer between the layers that ranged from 23 to 33 fs, and was supported by direct femtosecond pump-probe measurements. These results indicate that interlayer exciton formation and non-radiative decay channels dominate optical properties in these bilayers, which may be important for tunable future photovoltaics and detector applications.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Unconventional interlayer exchange coupling via chiral phonons in synthetic magnetic oxide heterostructures

Chiral symmetry breaking of phonons plays an essential role in emergent quantum phenomena owing to its strong coupling to spin degree of freedom. However, direct experimental evidence of the chiral phonon–spin coupling is lacking. In this study, we report a chiral phonon–mediated interlayer exchange interaction in atomically controlled ferromagnetic metal (SrRuO 3 )-nonmagnetic insulator (SrTiO 3 ) heterostructures. Owing to the unconventional interlayer exchange interaction, we have observed rotation of spins as a function of nonmagnetic insulating spacer thickness, resulting in a spin spiral state. The chiral phonon–spin coupling is further confirmed by phonon Zeeman effect. The existence of the chiral phonons and their interplay with spins along with our atomic-scale heterostructure approach unveil the crucial roles of chiral phonons in magnetic materials.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Revealing the preferred interlayer orientations and stackings of two-dimensional bilayer gallium selenide crystals

Characterizing and controlling the interlayer orientations and stacking order of bilayer two-dimensional (2D) crystals and van der Waals (vdW) heterostructure is crucial to optimize their electrical and optoelectronic properties. The four polymorphs of layered gallium selenide (GaSe) that result from different layer stacking provide an ideal platform to study the stacking configurations in bilayer 2D crystals. Here, through a controllable vapor-phase deposition method we selectively grow bilayer GaSe crystals and investigate their two preferred 0° or 60° interlayer rotations. The commensurate stacking configurations (AA' and AB-stacking) in as-grown 2D bilayer GaSe crystals are clearly observed at the atomic scale and the Ga-terminated edge structure are identified for the first time by using atomic-resolution scanning transmission electron microscopy (STEM). Theoretical analysis of the interlayer coupling energetics vs. interlayer rotation angle reveals that the experimentally-observed orientations are energetically preferred among the bilayer GaSe crystal polytypes. Here, the combined experimental and theoretical characterization of the GaSe bilayers afforded by these growth studies provide a pathway to reveal the atomistic relationships in interlayer orientations responsible for the electronic and optical properties of bilayer 2D crystals and vdW heterostructures.

36 MATERIALS SCIENCE↗