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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 73 records · Page 4

Microstructure and defect engineering of graphite anodes by pulsed laser annealing for enhanced performance of lithium-ion batteries

We report nanosecond pulsed laser annealing significantly improves cyclability and current carrying capacity of lithium-ion batteries (LIBs). This improvement is achieved by engineering of microstructure and defect contents present in graphite in a controlled way by using pulsed laser annealing (PLA) to increase the number density of Li + ion trapping sites. The PLA treatment causes the following changes: (1) creates surface steps and grooves between the grains to improve Li + ion charging and intercalation rates; (2) removes inactive polyvinylidene difluoride (PVDF) binder from the top of graphite grains and between the grains which otherwise tends to block the Li + migration; and (3) produces carbon vacancies in (0001) planes which can provide Li + charging sites. From X-ray diffraction data, we find upshift in diffraction peak or reduction in planar spacing, from which vacancy concentration was estimated to be about 1.0%, which is higher than the thermodynamic equilibrium concentration of vacancies. The laser treatment creates single and multiple C vacancies which provide sites for Li + ions, and it also produces steps and grooves for Li + ions to enter the intercalating sites. It is envisaged that the formation of these sites enhances Li+ ion absorption during charge and discharge cycles. The current capacity increases from an average 360 mAh/g to 430 mAh/g, and C–V shows significant reduction in SEI layer formation after the laser treatment. If the vacancy concentration is too high and charge-discharge cycles are long, then trapping of electrons by Li + may occur, which can lead to Li 0 formation and Li plating causing reduction in current capacity.

25 ENERGY STORAGE↗

Precise Fermi level engineering in a topological Weyl semimetal via fast ion implantation

The precise controllability of the Fermi level is a critical aspect of quantum materials. For topological Weyl semimetals, there is a pressing need to fine-tune the Fermi level to the Weyl nodes and unlock exotic electronic and optoelectronic effects associated with the divergent Berry curvature. However, in contrast to two-dimensional materials, where the Fermi level can be controlled through various techniques, the situation for bulk crystals beyond laborious chemical doping poses significant challenges. Here, we report the milli-electron-volt (meV) level ultra-fine-tuning of the Fermi level of bulk topological Weyl semimetal tantalum phosphide using accelerator-based high-energy hydrogen implantation and theory-driven planning. By calculating the desired carrier density and controlling the accelerator profiles, the Fermi level can be experimentally fine-tuned from 5 meV below, to 3.8 meV below, to 3.2 meV above the Weyl nodes. High-resolution transmission electron microscopy reveals the crystalline structure is largely maintained under irradiation, while electrical transport indicates that Weyl nodes are preserved and carrier mobility is also largely retained. Our work demonstrates the viability of this generic approach to tune the Fermi level in semimetal systems and could serve to achieve property fine-tuning for other bulk quantum materials with ultrahigh precision.

36 MATERIALS SCIENCE↗

Design and Engineering of LUPIN: A Test-Bed Radiofrequency Ion Source for Enhanced Neutral Beam Injection on DIII-D

The Large, Uniform Plasma for Ionizing Neutrals (LUPIN) is an RF inductively coupled plasma (ICP) chamber for demonstrating plasma performance of an RF ICP positive ion source upgrade for the DIII-D Neutral Beam Injection (NBI) system. LUPIN will be used to investigate ion source physics, including neutral gas dynamics, plasma density uniformity, interactions with Faraday shields, and power coupling to novel RF antenna designs. LUPIN has an RF generator capable of delivering 20 kW of power at 2 MHz, which is coupled into a cylindrical quartz vessel measuring 20 cm in length and 10 cm in radius. This configuration matches the power density requirements for a full-scale ion source. Target hydrogen and deuterium plasma densities exceeding 10 18 m -3 would relate to extracted ion current densities of 2100 A/m 2 for 10 s. Vacuum conductance and gas flow calculations predict a maximum achievable neutral gas flow rate of 1675 Pa·L/s at 5 Pa of He, which mimics the gas flow of the DIII-D NBI system. Designs have been developed for an internal Faraday shield to mitigate heat flux and ion sputtering on the dielectric vessel. Thermomechanical finite element simulations demonstrated the Faraday shield design to be capable of withstanding anticipated heat loads from worst-case operation scenarios. Results of upcoming experimental investigations on LUPIN will guide the design of a full-scale prototype for DIII-D integration.

Faraday shield↗

Controllable Formation of Threefold-Coordinated Oxygen in Graphene by Low-Energy Ion Implantation

The atomically precise engineering of impurities in graphene and the understanding of their structural and carrier-dependent electronic properties at the nanoscale are crucial for advancing graphene-based nanoelectronics, catalysis, and energy technologies. Here, we demonstrate controllable incorporation of the elusive 3-fold-coordinated O substitutions into graphene using low-energy O + ion implantation under ultrahigh-vacuum conditions. By combining high-resolution scanning tunneling microscopy and spectroscopy (STM/S), bond-resolved noncontact atomic force microscopy techniques, and density functional theory (DFT) calculations, we resolve both the structural and electronic properties of the O-related defects. The STM/S measurements, corroborated by DFT calculations, uncover a characteristic impurity state that is energetically pinned to the Dirac point across different charge-carrier doping regimes. Molecular dynamics simulations further reveal the distribution of implantation-induced configurations and identify the formation of 3-fold-coordinated O dopants. Furthermore, this work provides a viable route to incorporate 3-fold-coordinated O dopants and opens new opportunities for controlled defect engineering in graphene.

3-fold-coordinated oxygen↗

Surface Amorphization of Vanadium Dioxide (B) for K-ion Battery

Given the merits of low cost, fast ionic transport in electrolyte, and high operating voltage, potassium ion batteries (PIBs) are promising alternatives to lithium-ion batteries. However, developing suitable electrode materials that can reversibly accommodate large potassium ions is a great challenge. In this paper, guided by density functional theory (DFT) calculations, it is demonstrated that the strategy of interfacial engineering via surface amorphization of VO 2 (B) nanorods (SA-VO 2 ), which results in the formation of a crystalline core/amorphous shell heterostructure, enables superior K + storage performance in terms of large capacity, outstanding rate capability, and long cycle stability working as an anode for PIBs. DFT calculations reveal that the created crystalline/amorphous heterointerface in SA-VO 2 can substantially lower the surface energy, narrow the band gap, and reduce the K + diffusion barrier of VO 2 (B). These conditions enable enhanced K + storage capacity and rapid K + /electron transfer, which result in large capacity and outstanding rate capability. Using in situ X-ray diffraction and in situ transmission electron microscopy complemented by ex situ microscopic and spectroscopic techniques, it is unveiled that the superior cycling stability originates from the excellent phase reversibility with negligible strain response and robust mechanical behavior of SA-VO 2 upon (de)potassiation.

25 ENERGY STORAGE↗

Unlocking the Dynamics of Ion Migration and Voltage Bias Stress Effects through Crystallite Engineering in Metal Halide Perovskites

Understanding the interplay between crystal engineering and the coupled electronic-ionic charge transport properties of metal halide perovskites remains a critical issue in the field. In this work, we developed an experimental approach to tune the crystallite orientation of methylammonium lead iodide (CH 3 NH 3 PbI 3 ) while maintaining their overall crystal structure. This approach allows us to selectively manipulate crystallite orientations to control out-ofplane ion migration and mitigate voltage bias stress effects in CH 3 NH 3 PbI 3 thin films. By employing advanced diffraction and spectroscopic techniques, we achieved a comprehensive characterization of the anisotropic crystallite properties in CH 3 NH 3 PbI 3 thin films with distinct preferred orientations. Our findings reveal that specific crystallite orientations, particularly those that limit halide ion migration pathways along the (200) crystallographic plane, significantly suppress out-of-plane ion migration. This suppression reduces hysteresis and alleviates voltage bias stress effects in CH 3 NH 3 PbI 3 solar cells, ultimately enhancing device stability and performance. These insights not only deepen our understanding of the relationship between crystallite orientation and device functionality but also highlight a promising strategy for regulating ion migration in MHP-based devices. This approach holds significant potential for advancing the stability and efficiency of perovskite solar cells and extending its applicability to other optoelectronic devices.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

The role of ionic liquids in resolving the interfacial chemistry for (quasi-) solid-state batteries

Interfacial issues impede the advancement of current solid state battery technology; thus, interface engineering approaches are necessary to enable solid-state configuration. The advantage of solid-state cells stems from their low flammability and high electrochemical stability. Ionic liquids are viscous and nonflammable compounds that possess the requisite physical properties while optimizing the interface between solid electrodes and solid electrolytes, accelerating interfacial ion transport and enabling the fabrication of engineered interphases via the supply of robust chemical building blocks. In conclusion, this review summarizes the roles of ionic liquids in solid-state batteries focusing on the interface, with insights into their functionality as well as highlighting their applicability in the next generation battery systems.

25 ENERGY STORAGE↗

Interfacial Engineering of Metal Chalcogenides‐based Heterostructures for Advanced Sodium‐Ion Batteries

Sodium-ion batteries (SIBs) have become one of the most promising candidates for large-scale energy storage applications. Metal chalcogenides anode materials based on alloying or conversion reactions are widely studied because of their high theoretical capacities and rich redox reactions. However, their intrinsic limitations such as high voltage hysteresis and large volume expansion hinder their further applications. The construction of heterostructures has become an attractive strategy to alleviate the above issues. Here, the formation of built in electric fields (BIEFs) at the heterointerfaces will accelerate the migration of Na + and electrons. Moreover, heterostructures can also enhance the structural stability, generate more active sites and provide additional capacity. It is worth noting that heterointerfacial properties play a significant role in promoting the overall electrochemical performance of the heterostructures. However, a systematic understanding of their interfacial engineering is currently lacking. This article reviews the research progress of metal chalcogenides-based heterostructure anode materials in the near term. First, the definition, classification and the roles of heterostructures are introduced. Second, the detailed research progress of the metal chalcogenide-based heterostructures anodes in SIBs is discussed. Finally, the future prospects and potential research directions of the heterostructures for batteries are discussed.

anode↗

Stress engineering for crack and dendrite prevention in solid electrolytes via ion implantation

Solid-state batteries represent a promising technology that offers safer and more densely packed energy storage. A primary cause of failure in solid-state cells is the penetration of metal dendrites through the solid electrolyte. Here, we report that fluorine-ion implantation can enhance the mechanical resistance of solid electrolyte Li 6.5 La 3 Zr 1.5 Ta 0.5 O 12 to dendrite propagation by inducing residual compressive stress in the subsurface of the electrolyte. Ion implantation modifies subsurface residual stress and also alters the electrolyte’s surface, resulting in multifunctional enhancement. The combined chemical and mechanical effects of ion implantation enable reversible lithium metal stripping and plating at elevated current densities while enhancing air stability and mitigating the formation of a harmful carbonate layer at the surface. This study provides new insights into a scalable dendrite-suppression strategy for designing solid-state batteries suitable for cycling at room temperature and low stack pressures.

25 ENERGY STORAGE↗

Promoting Fast Ion Conduction in Li-Argyrodite through Lithium Sublattice Engineering

Fundamental understanding of ionic transport plays a pivotal role in designing and optimizing fast ionic conductors. Here, through a systematic neutron scattering and theoretical investigation, we discovered new insights about how anion sublattice affects Li + distribution and transport in Li-argyrodite. We found that the promotion of Li + conductivities is strongly correlated with a previously overlooked Li + interstitial site (16e), which is critical for realizing intercage Li + migration. More isotropic Li + migration pathways with higher Li + occupancies on the interstitial 16e site are found to be the underlying reason for the much higher Li + conductivity in Li 6 PS 5 Cl relative to the Br- and I-based analogues. We further confirm that they are also the universal driving force for the ultrahigh Li + conductivities in both anion-substituted Li-poor (Li 6–a PS 5–a X a, X = Cl and Br) and cation-substituted Li-rich argyrodite (e.g., Li 6+a GeaP 1–a S 5 I and Li 6+a SiaSb 1–a S 5 I). In conclusion, it is expected this strategy can be generally adopted to improve the ionic conductivity of the broad family of Li-rich argyrodite and beyond.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Atomistic Positioning of Defects in Helium Ion Treated Single-Layer MoS 2

Structuring materials with atomic precision is the ultimate goal of nanotechnology and is becoming increasingly relevant as an enabling technology for quantum electronics/spintronics and quantum photonics. Here, we create atomic defects in monolayer MoS 2 by helium ion (He-ion) beam lithography with a spatial fidelity approaching the single-atom limit in all three dimensions. Using low-temperature scanning tunneling microscopy (STM), we confirm the formation of individual point defects in MoS 2 upon He-ion bombardment and show that defects are generated within 9 nm of the incident helium ions. Atom-specific sputtering yields are determined by analyzing the type and occurrence of defects observed in high-resolution STM images and compared with Monte Carlo simulations. Both theory and experiment indicate that the He-ion bombardment predominantly generates sulfur vacancies.

Two-dimensional materials↗

Engineering Design of D1/D3 Dipole Magnets for the Electron-Ion Collider (EIC)

Here, the Electron-Ion Collider (EIC) at Brookhaven National Laboratory (BNL) is designed to deliver a peak luminosity of 10 34 cm −2 s −1 . An electron storage ring (ESR) will be installed in the existing Relativistic Heavy Ion Collider (RHIC) tunnel and will store polarized electron beams from 5 to 18 GeV. The ESR will have 750 dipole magnets with varying field requirements, including 576 super-bend triplets consisting of two magnets D1/D3 and D2. This paper presents on the engineering design of the D1/D3 dipole magnets within the arcs, with special focus on the coil design that allows the magnet to be configured for variable ampere-turns per energy.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗

Non‐Traditional Positively‐Biased Narrow‐Band Perovskite Single‐Crystal Photodetectors Enabled by Interfacial Engineering

Abstract The positive bias in theory narrows down the depletion region and thus results in significant charge injection, which should be detrimental to charge generation and collection performance for traditional photodetectors. Here, instead, it is found that the external quantum efficiency (EQE) is increased by more than 50 times when the photodetector is positively biased. A positive bias of +6 V drives ion migration of Br − and Cs + towards the anode and cathode, respectively, leading to self‐doping within bulk single crystals to form an advantageous p‐i‐n junction for better charge collection in the devices. Meanwhile, the injected holes are allowed to tunnel through the cesium lead bromide/fullerene interface to reach the cathode which also significantly contributes to the enhancement of EQE in the forward‐biased devices. The positively‐biased narrow‐band (full width at half maxima (FWHM) = 16 nm) photodetectors exhibit a specific detectivity of 6.5 × 10 10 Jones at 550 nm, along with the −3 dB cutoff frequency of 2776 Hz. By manipulating charge injection and ion migration using interfacial engineering, a class of non‐traditional, positively‐biased, and highly narrow‐band photodetectors is demonstrated, which offers an alternative design strategy for imaging, biosensing, automatic control, and optical communication.

Li, Junchi↗

ZAM Modeling Study to Support the Tank Closure Cesium Removal (TCCR) 1A Unit

Currently at the Savannah River Site (SRS), the Tank Closure Cesium Removal (TCCR) is an “at-tank” process designed to remove cesium from aqueous tank waste. Cesium will be removed by ion exchange using the engineered IONSIV® R9120 form of Crystalline Silicotitanate (CST) media. The current TCCR design has two columns online in a lead-lag configuration to optimize media usage and achieve the target decontamination. Once the lead column is saturated with cesium, it will be removed from service, the lag column will rotate into the lead position, and a new column with fresh ion-exchange media will be placed into the lag position. The TCCR process for cesium removal from Tank 10H is detailed in X-SOW-H- 00002. Demonstration of the system began in early calendar year 2019 with two batches of salt solution generated by dissolving saltcake in Tank 10H, followed by processing of these batches through the TCCR system. A third TCCR Tank 10H dissolved saltcake batch is scheduled for processing soon. Upon completion of the demonstration with Tank 10H dissolved saltcake, Tank 9H salt solution will be transferred to Tank 10H and subsequently processed through the TCCR unit with new CST media (referred to as R9120-B 30x60) added to new IX columns. The TCCR processing campaign of Tank 9H salt solution is referred to as TCCR-1A .

12 MANAGEMENT OF RADIOACTIVE AND NON-RADIOACTIVE W↗

Engineering an effective three-spin Hamiltonian in trapped-ion systems for applications in quantum simulation

Trapped-ion quantum simulators, in analog and digital modes, are considered a primary candidate to achieve quantum advantage in quantum simulation and quantum computation. The underlying controlled ion–laser interactions induce all-to-all two-spin interactions via the collective modes of motion through Cirac–Zoller or Mølmer–Sørensen schemes, leading to effective two-spin Hamiltonians, as well as two-qubit entangling gates. In this work, the Mølmer–Sørensen scheme is extended to induce three-spin interactions via tailored first- and second-order spin–motion couplings. The scheme enables engineering single-, two-, and three-spin interactions, and can be tuned via an enhanced protocol to simulate purely three-spin dynamics. Analytical results for the effective evolution are presented, along with detailed numerical simulations of the full dynamics to support the accuracy and feasibility of the proposed scheme for near-term applications. With a focus on quantum simulation, the advantage of a direct analog implementation of three-spin dynamics is demonstrated via the example of matter-gauge interactions in the U(1) lattice gauge theory within the quantum link model. The mapping of degrees of freedom and strategies for scaling the three-spin scheme to larger systems, are detailed, along with a discussion of the expected outcome of the simulation of the quantum link model given realistic fidelities in the upcoming experiments. The applications of the three-spin scheme go beyond the lattice gauge theory example studied here and include studies of static and dynamical phase diagrams of strongly interacting condensed-matter systems modeled by two- and three-spin Hamiltonians.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Non-classical ion-indiffusion processes in quasi-one-dimensional ionic conductor KTiOPO4

Developments in coercive field engineering and waveguide writing via ion-exchange in the ferroelectric ionic-conductor KTiOPO4 (KTP) have led to breakthroughs within the field of nonlinear optics and quantum photonics. However, the microscopic diffusion dynamics of ion-exchange in KTP are poorly understood and show signs of non-classical diffusion dynamics. The precise control of ion-exchange gradients is critical for developing KTP into a mature, integrated nonlinear optical material but requires a level of control that, in turn, demands a deeper understanding of the ion-exchange process. We employ direct ToF-SIMS mapping to untangle the complex diffusion dynamics of the commonly used ion-exchange dopant ions: Rb, Ba, and K. We map periodic diffusion gradients of two exchanges, one dominated by Rb-ions and the other by Ba-ions. For the first time, we show the interdependent nature of the Ba- and Rb ion in the ion-exchange diffusion gradient. The low incorporation of the Ba ion is mapped and quantified, and dopant–crystal interactions are identified. This work highlights the complex diffusion dynamics of dopants in the KTP structure and lays the foundation for deterministic control of diffusion gradients for the next generation of integrated nonlinear and quantum photonic devices.

Barrett, Laura [ORNL]↗

Er-doped anatase TiO 2 thin films on LaAlO 3 (001) for quantum interconnects (QuICs)

Rare-earth ions (REIs) doped into solid-state crystal hosts offer an attractive platform for realizing quantum interconnects that can function as quantum memories and quantum repeaters. The 4f valence electrons of REIs are shielded by 5s and 5p electrons and undergo highly coherent transitions even when embedded in host crystals. In particular, Er 3+ has an optical transition in the telecom band that is suitable for low-loss communication. Recently, REIs in thin film systems have gained interest due to potential advantages in providing a flexible host crystal environment, enabling scalable on-chip integration with other quantum devices. Here, we investigate the structural and optical properties of Er-doped anatase TiO 2 thin films on LaAlO 3 (001) substrates. By choosing a system with minimal lattice mismatch and adjusting Er-dopant concentration, we achieve optical inhomogeneous linewidths of 5 GHz at 4.5 K. Furthermore, we show that 9 nm-thick buffer and capping layers can reduce the linewidth by more than 40%, suggesting a pathway to further narrowing linewidths in this system. We also identify that Er 3+ ions mainly incorporate into substitutional Ti 4+ sites with non-polar D 2d symmetry, which makes Er dopants insensitive to the first order to local electric fields from impurities and is desirable for coherence properties of Er 3+ spins.

42 ENGINEERING↗