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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 73 records · Page 4
All sourcesNASA NTRSDOE OSTI
NASA NTRS1972

Silicon solar cell development and radiation effects study for low temperature and low illumination intensity operation, volume 2

The results are presented of a study to determine the effect of in-situ proton irradiation upon low temperature, low intensity performance of several cell types. The cell types were selected in an attempt to distinguish variations in temperature-dependent radiation resistance which could be attributed to the n-p or p-n structure, diffused or implanted junctions, crucible grown or float-zone type base material, and high or low base resistivity. The results indicate that while expected variations of performance occur at room temperature, all cell types degrade more or less similarly at lower temperatures with normalized degradation becoming increasingly rapid as temperature is reduced. Recommendations for an optimized cell for Jupiter probe use are included along with a definition of the testing required on these cells to insure good performance characteristics.

Kirkpatrick, A. R.↗
NASA NTRS1981

Processing of silicon solar cells by ion implantation and laser annealing

Methods to improve the radiation tolerance of silicon cells for spacecraft use are described. The major emphasis of the program was to reduce the process-induced carbon and oxygen impurities in the junction and base regions of the solar cell, and to measure the effect of reduced impurity levels on the radiation tolerance of cells. Substrates of 0.1, 1.0 and 10.0 ohm-cm float-zone material were used as starting material in the process sequence. High-dose, low-energy ion implantation was used to form the junction in n+p structures. Implant annealing was performed by conventional furnace techniques and by pulsed laser and pulsed electron beam annealing. Cells were tested for radiation tolerance at Spire and NASA-LeRC. After irradiation by 1 MeV electrons to a fluence of 10 to the 16th power per sq cm, the cells tested at Spire showed no significant process induced variations in radiation tolerance. However, for cells tested at Lewis to a fluence of 10 to the 15th power per sq cm, ion-implanted cells annealed in vacuum by pulsed electron beam consistently showed the best radiation tolerance for all cell resistivities.

Minnucci, J. A.↗
NASA NTRS1992

Morphologic differentiation of colon carcinoma cell lines HT-29 and HT-29KM in rotating-wall vessels

A new low shear stress microcarrier culture system has been developed at NASA's Johnson Space Center that permits three-dimensional tissue culture. Two established human colon adenocarcinoma cell lines, HT-29, an undifferentiated, and HT-29KM, a stable, moderately differentiated subline of HT-29, were grown in new tissue culture bioreactors called Rotating-Wall Vessels (RWVs). RWVs are used in conjunction with multicellular cocultivation to develop a unique in vitro tissue modeling system. Cells were cultivated on Cytodex-3 microcarrier beads, with and without mixed normal human colonic fibroblasts, which served as the mesenchymal layer. Culture of the tumor lines in the absence of fibroblasts produced spheroidlike growth and minimal differentiation. In contrast, when tumor lines were co-cultivated with normal colonic fibroblasts, initial growth was confined to the fibroblast population until the microcarriers were covered. The tumor cells then commenced proliferation at an accelerated rate, organizing themselves into three-dimensional tissue masses that achieved 1.0- to 1.5-cm diameters. The masses displayed glandular structures, apical and internal glandular microvilli, tight intercellular junctions, desmosomes, cellular polarity, sinusoid development, internalized mucin, and structural organization akin to normal colon crypt development. Differentiated samples were subjected to transmission and scanning electron microscopy and histologic analysis, revealing embryoniclike mesenchymal cells lining the areas around the growth matrices. Necrosis was minimal throughout the tissue masses. These data suggest that the RWV affords a new model for investigation and isolation of growth, regulatory, and structural processes within neoplastic and normal tissue.

Colonic Neoplasms/pathology↗
NASA NTRS1982

Optimal design of high-efficiency tandem cells

Computer analysis indicates that a substantial increase in solar cell conversion efficiencies can be achieved by using two-cell, multi-bandgap tandem structures instead of single-junction cells. Practical AM1 efficiencies of about 30 percent at one sun and over 30 percent at multiple suns are to be expected. The further increases in efficiency calculated for a three-cell tandem structure are much smaller and may not justify the added complexity. For inexpensive two-cell tandem modules, Si is preferred for the bottom cell, and the top-cell material should have a bandgap of 1.75 to 1.80 eV. The GaAs-AlAs and GaAs-GaP systems are very attractive candidates for the top cell. Significant advances have been achieved in growing GaAs on Ge-coated Si substrates (for the two-terminal, two-cell structure) and in growing free-standing ultrathin GaAs layers (for the two-terminal or four-terminal structures). These advances should be transferable to the GaAs-AlAs and GaAs-GaP systems.

Fan, J. C. C.↗
NASA NTRS1975

Cadmium sulfide solar cells

Development, fabrication and applications of CdS solar cells are reviewed in detail. The suitability of CdS cells for large solar panels and microcircuitry, and their low cost, are emphasized. Developments are reviewed by manufacturer-developer. Vapor phase deposition of thin-film solar cells, doping and co-evaporation, sputtering, chemical spray, and sintered layers are reviewed, in addition to spray deposition, monograin layer structures, and silk screening. Formation of junctions by electroplating, evaporation, brushing, CuCl dip, and chemiplating are discussed, along with counterelectrode fabrication, VPD film structures, the Cu2S barrier layer, and various photovoltaic effects (contact photovoltage, light intensity variation, optical enhancement), and various other CdS topics.

Stanley, A. G.↗
NASA NTRS1978

Design considerations for silicon HLE solar cells

The high-low (H-L) junction in the emitter region that defines the high-low-junction emitter (HLE) solar cell suppresses the dark emitter recombination current J sub E so that the base recombination current dominates in determining the open-circuit voltage. For silicon cells this enables the achievement of considerably larger values of open-circuit voltage than those achievable in conventional structures. This paper describes experiments that demonstrate the achievement of J sub E suppression (to less than 5 x 10 to the -14th A/sq cm) and large open-circuit voltage (640 mV) in HLE test cells of two distinct types. In the first type (the diffused HLE structure) impurity diffusion forms the H-L junction in the emitter; in the second type (the oxide-charge-induced HLE structure) the H-L junction is formed in emitter material of relatively low doping concentration by an oxide-charge-induced electron accumulation layer.

Lindholm, F. A.↗
NASA NTRS1998

Observation and Modeling of Single Wall Carbon Nanotube Bend Junctions

Single wall carbon nanotube (SWNT) bends, with diameters from approx. 1.0 to 2.5 nm and bend angles from 18 deg. to 34 deg., are observed in catalytic decomposition of hydrocarbons at 600 - 1200 C. An algorithm using molecular dynamics simulation (MD) techniques is developed to model these structures that are considered to be SWNT junctions formed by topological defects (i.e. pentagon-heptagon pairs). The algorithm is used to predict the tube helicities and defect configurations for bend junctions using the observed tube diameters and bend angles. The number and arrangement of the defects at the junction interfaces are found to depend on the tube helicities and bend angle. The structural and energetic calculations using the Brenner potential show a number of stable junction configurations for each bend angle with the 34 deg. bends being more stable than the others. Tight binding calculations for local density of state (LDOS) and transmission coefficients are carried out to investigate electrical properties of the bend junctions.

Han, Jie↗
NASA NTRS2008

Magic-T Junction using Microstrip/Slotline Transitions

An improved broadband planar magic-T junction that incorporates microstrip/slotline transitions has been developed. In comparison with a prior broadband magic-T junction incorporating microstrip/slotline transitions, this junction offers superior broadband performance. In addition, because this junction is geometrically simpler and its performance is less affected by fabrication tolerances, the benefits of the improved design can be realized at lower fabrication cost. There are potential uses for junctions like this one in commercial microwave communication receivers, radar and polarimeter systems, and industrial microwave instrumentation. A magic-T junction is a four-port waveguide junction consisting of a combination of an H-type and an E-type junction. An E-type junction is so named because it includes a junction arm that extends from a main waveguide in the same direction as that of the electric (E) field in the waveguide. An H-type junction is so named because it includes a junction arm parallel to the magnetic (H) field in a main waveguide. A magic-T junction includes two input ports (here labeled 1 and 2, respectively) and two output ports (here labeled E and H, respectively). In an ideal case, (1) a magic-T junction is lossless, (2) the input signals add (that is, they combine in phase with each other) at port H, and (3) the input signals subtract (that is, they combine in opposite phase) at port E. The prior junction over which the present junction is an improvement affords in-phase-combining characterized by a broadband frequency response, and features a small slotline area to minimize in-band loss. However, with respect to isolation between ports 1 and 2 and return loss at port E, it exhibits narrowband frequency responses. In addition, its performance is sensitive to misalignment of microstrip and slotline components: this sensitivity is attributable to a limited number of quarter-wavelength (lambda/4) transmission-line sections for matching impedances among all four ports, and to strong parasitic couplings at the microstrip/slotline T junction, where four microstrip lines and a slotline are combined. The present improved broadband magic-T junction (see figure) includes a microstrip ring structure and two microstrip- to-slotline transitions. One of the microstrip/slotline transitions is a small T junction between the ring and a slotline; the other microstrip/slotline transition effects coupling between the slotline and port E. The smallness of the T junction and the use of minimum-size slotline terminations help to minimize radiation loss. An impedance-transformation network that includes multiple quarter-wavelength sections is used to increase the operating bandwidth and minimize the parasitic coupling around the microstrip/slotline T junction. As a result, the improved junction has greater bandwidth and lower phase imbalance at the sum and difference ports than did the prior junction.

U-yen, Kongpop↗
NASA NTRS1980

The spectral response of a front surface field solar cell

A calculation of the short-circuit current as a function of wavelength of the incident light, induced in a front surface field solar cell, is presented. The cell consists of a P(+)-P-N(+) junction. The electric field present in the P(+) layer situated at the front surface (the surface exposed to the sun) boosts the minority carrier collection at the P-N(+) junction sufficiently to make this structure a viable alternative to ordinary solar cells. A distinct advantage derives from the placement of all ohmic contacts on the back-surface facilitating array assemblage.

Von Roos, O.↗
NASA NTRS1985

Observation of adsorbate-induced surface states by elastic electron tunneling spectroscopy

Electronic structure induced by adsorbates at the interface of Al/AlOx/Au tunnel junctions has been observed by elastic electron tunneling spectroscopy. Strong structures appearing in the tunneling spectra above approximately 1 eV after exposure to I, Hg, Bi, and organohalides, have been interpreted in terms of adsorbate-induced surface states. The spectroscopic capabilities of elastic electron tunneling spectroscopy may be useful in the area of chemical detection. In the broader sense, the observation of adsorbate-induced unoccupied electronic states below the vacuum energy, makes elastic electron tunneling spectroscopy a potentially useful technique for the study of surfaces.

Leduc, H. G.↗
NASA NTRS1986

Process research of non-Czochralski silicon material

Simultaneous diffusion of liquid precursors containing phosphorus and boron into dendritic web silicon to form solar cell structures was investigated. A simultaneous junction formation techniques was developed. It was determined that to produce high quality cells, an annealing cycle (nominal 800 C for 30 min) should follow the diffusion process to anneal quenched-in defects. Two ohm-cm n-base cells were fabricated with efficiencies greater than 15%. A cost analysis indicated that the simultansous diffusion process costs can be as low as 65% of the costs of the sequential diffusion process.

Campbell, R. B.↗
NASA NTRS1995

Mechanically stacked concentrator tandem solar cells

Four-terminal mechanically stacked solar cells were developed for advanced space arrays with line-focus reflective concentrators. The top cells are based on AlGaAs/GaAs multilayer heterostructures prepared by low temperature liquid phase epitaxy. The bottom cells are based on heteroepitaxial InP/InGaAs liquid phase epitaxy or on homo-junction GaSb, Zn-diffused structures. The sum of the highest reached efficiencies of the top and bottom cells is 29.4 percent. The best four-terminal tandems have an efficiency of 27 to 28 percent. Solar cells were irradiated with 1 MeV electrons and their performances were determined as a function of fluence up to 10(exp 16) cm(exp-2). It was shown that the radiation resistance of developed tandem cells is similar to the most radiative stable AlGaAs/GaAs cells with a thin p-GaAs photoactive layer.

Andreev, V. M.↗
NASA NTRS2001

Temperature Effects in Varactors and Multipliers

Varactor diode multipliers are a critical part of many THz measurement systems. The power and efficiencies of these devices limit the available power for THz sources. Varactor operation is determined by the physics of the varactor device and a careful doping profile design is needed to optimize the performance. Higher doped devices are limited by junction breakdown and lower doped structures are limited by current saturation. Higher doped structures typically have higher efficiencies and lower doped structures typically have higher powers at the same operating frequency and impedance level. However, the device material properties are also a function of the operating temperature. Recent experimental evidence has shown that the power output of a multiplier can be improved by cooling the device. We have used a particle Monte Carlo simulation to investigate the temperature dependent velocity vs. electric field in GaAs. This information was then included in a nonlinear device circuit simulator to predict multiplier performance for various temperatures and device designs. This paper will describe the results of this analysis of temperature dependent multiplier operation.

East, J.↗
NASA NTRS1977

Bimetallic junctions

The formation of voids through interdiffusion in bimetallic welded structures exposed to high operating temperatures is inhibited by utilizing an alloy of the parent materials in the junction of the parent materials or by preannealing the junction at an ultrahigh temperature. These methods are also used to reduce the concentration gradient of a hardening agent.

Arcella, F. G.↗
NASA NTRS1976

Considerations for the application of finite element beam modeling to vibration analysis of flight vehicle structures

The manner of representing a flight vehicle structure as an assembly of beam, spring, and rigid-body components for vibration analysis is described. The development is couched in terms of a substructures methodology which is based on the finite-element stiffness method. The particular manner of employing beam, spring, and rigid-body components to model such items as wing structures, external stores, pylons supporting engines or external stores, and sprung masses associated with launch vehicle fuel slosh is described by means of several simple qualitative examples. A detailed numerical example consisting of a tilt-rotor VTOL aircraft is included to provide a unified illustration of the procedure for representing a structure as an equivalent system of beams, springs, and rigid bodies, the manner of forming the substructure mass and stiffness matrices, and the mechanics of writing the equations of constraint which enforce deflection compatibility at the junctions of the substructures. Since many structures, or selected components of structures, can be represented in this manner for vibration analysis, the modeling concepts described and their application in the numerical example shown should prove generally useful to the dynamicist.

Kvaternik, R. G.↗
NASA NTRS1975

Skylab photography applied to geologic mapping in northwestern Central America

Two photolineation maps of southwestern Guatemala and Chiapas were made from S190 photographs along a ground track from Acajutla, El Salvador to San Cristobal de las Casas, Mexico. The maps document a structural complexity spanning the presumed triple junction of the Cocos, Americas, and Caribbean plates. The Polochic fault zone, supposedly the Americas-Caribbean plate boundary, is a sharply delineated feature across western Guatemala. Westward of the Mexican border it splays into a large number of faults with NW to SW trends. The structural pattern is quite different to the north (Americas plate) and to the south (Caribbean plate) of the Polochic fault, though both areas are dominated by NW-trending lineations. Within the Central American volcanic chain, the lineation patterns support the segmented model of the Benioff Zone, by showing a concentration of transverse lineations in the predicted locations, most notably NE-trending elements near Quezaltenango, Guatemala. The structural pattern obtained from the maps are compared to patterns described on recently published maps of more southerly parts of Central America, to begin a synthesis of the structure of the convergent plate boundary.

Rose, W. I., Jr.↗
NASA NTRS1973

Josephson junction interference grating.

The maximum current through multiple Josephson structures as a function of applied magnetic field is presented. Particular emphasis is placed on the Josephson penetration depth effects and geometrical considerations. The symmetrical and asymmetrical current feed two-, three-, four-, and five-junction gratings are analyzed and discussed. The Josephson penetration depth is shown to control the amplitude of the interference and diffraction patterns of the interference grating. In addition the interior-junction-length/interference-loop-area product is shown to control the operating mode of the interference grating. The dependence of the magnetic field sensitivity and interference pattern amplitude on the number of junctions is discussed.

Stuehm, D. L.↗
NASA NTRS1986

Room temperature deposition of superconducting NbN for superconductor-insulator-superconductor junctions

The deposition of stoichiometric B1-crystal-structure (111) NbN films on glass or sapphire substrates by reactive dc magnetron sputtering is reported. High-purity Ar-N2 mixtures are used in the apparatus described by Thakoor et al. (1985), and typical deposition parameters are given as background pressure about 10 ntorr, voltage -325 V, current 1 A, deposition rate 1.35 nm/s, film thickness 500 nm, P(Ar) 5-17 mtorr, initial P(N2) 2-6 mtorr, and room temperature. The N2 consumption-injection characteristics are studied and found to control NbN formation using well-conditioned Nb targets. Films with transition temperatures 15-16 K are obtained at P(Ar) = 12.9 + or - 0.2 mtorr and P(N2) = 3.7 + or - 0.1 mtorr. SIS junctions of area about 0.001 sq cm fabricated using the NbN films are shown to have I-V characteristics with nonlinearity parameter about 110 and NbN superconducting-gap parameter Delta = about 2.8 meV.

Thakoor, S.↗