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At least 73 records · Page 4

All sources NASA NTRS DOE OSTI

DOE OSTI2023

System and method for micromechanical logical and gate

The present disclosure relates to a mechanical AND-gate logic system that may make use of a first and second lever arms, a first pivot linkage coupling the lever arms, an output member, and a second pivot linkage coupling the second lever arm to the output member. The first lever arm has first and second spaced apart ends for independently receiving separate logic level 1 or logic level 0 input signals thereon, and an output end spaced apart from the first and second input ends. The output end is disposed generally equidistant from the first and second spaced apart ends. The second lever arm has an input end and an output end and can move in both pivoting and translating movements. The first pivot linkage couples the output end of the first lever arm to the input end of the second lever arm such that both the input end and the output end of the second lever arm are able to either pivot and or to translate. The second lever arm is only able to translate and apply a logic 1 level input signal to the output member, to thus generate a logic 1 level output signal, when a logic level 1 input signal is applied simultaneously to both of the first and second input ends of the first lever arm.

Panas, Robert Matthew↗

NASA NTRS1970

Logic AND gate for fluid circuits Patent

Logic AND gate for fluid circuits

Hellbaum, R. F.↗

DOE OSTI2020

Randomization of dangling nodes in a digital circuit design to mitigate hardware trojans

Described herein are various technologies pertaining to randomizing logic associated with dangling nodes in a digital circuit design. A dangling node is an input to or output from a logic gate in the digital circuit design that is identified as not impacting a desired output of the digital circuit design. Randomizing the logic associated with a dangling node can include deleting a logic gate, adding a logic gate, replacing a logic gate with another logic gate, etc. Randomizing the logic associated with the dangling node prevents hardware trojans that may have been inserted into the circuit design from being implemented in a circuit that is generated based upon the design.

97 MATHEMATICS AND COMPUTING↗

NASA NTRS2015

Method and Apparatus for Simultaneous Processing of Multiple Functions

Electronic logic gates that operate using N logic state levels, where N is greater than 2, and methods of operating such gates. The electronic logic gates operate according to truth tables. At least two input signals each having a logic state that can range over more than two logic states are provided to the logic gates. The logic gates each provide an output signal that can have one of N logic states. Examples of gates described include NAND/NAND gates having two inputs A and B and NAND/NAND gates having three inputs A, B, and C, where A, B and C can take any of four logic states. Systems using such gates are described, and their operation illustrated. Optical logic gates that operate using N logic state levels are also described.

Stoica, Adrian↗

NASA NTRS2017

Method and Apparatus for Simultaneous Processing of Multiple Functions

Stoica, Adrian↗

NASA NTRS1989

Gallium arsenide processing for gate array logic

The development of a reliable and reproducible GaAs process was initiated for applications in gate array logic. Gallium Arsenide is an extremely important material for high speed electronic applications in both digital and analog circuits since its electron mobility is 3 to 5 times that of silicon, this allows for faster switching times for devices fabricated with it. Unfortunately GaAs is an extremely difficult material to process with respect to silicon and since it includes the arsenic component GaAs can be quite dangerous (toxic) especially during some heating steps. The first stage of the research was directed at developing a simple process to produce GaAs MESFETs. The MESFET (MEtal Semiconductor Field Effect Transistor) is the most useful, practical and simple active device which can be fabricated in GaAs. It utilizes an ohmic source and drain contact separated by a Schottky gate. The gate width is typically a few microns. Several process steps were required to produce a good working device including ion implantation, photolithography, thermal annealing, and metal deposition. A process was designed to reduce the total number of steps to a minimum so as to reduce possible errors. The first run produced no good devices. The problem occurred during an aluminum etch step while defining the gate contacts. It was found that the chemical etchant attacked the GaAs causing trenching and subsequent severing of the active gate region from the rest of the device. Thus all devices appeared as open circuits. This problem is being corrected and since it was the last step in the process correction should be successful. The second planned stage involves the circuit assembly of the discrete MESFETs into logic gates for test and analysis. Finally the third stage is to incorporate the designed process with the tested circuit in a layout that would produce the gate array as a GaAs integrated circuit.

Cole, Eric D.↗

NASA NTRS1993

Fault handling schemes in electronic systems with specific application to radiation tolerance and VLSI design

Naturally occurring space radiation particles can produce transient and permanent changes in the electrical properties of electronic devices and systems. In this work, the transient radiation effects on DRAM and CMOS SRAM were considered. In addition, the effect of total ionizing dose radiation of the switching times of CMOS logic gates were investigated. Effects of transient radiation on the column and cell of MOS dynamic memory cell was simulated using SPICE. It was found that the critical charge of the bitline was higher than that of the cell. In addition, the critical charge of the combined cell-bitline was found to be dependent on the gate voltage of the access transistor. In addition, the effect of total ionizing dose radiation on the switching times of CMOS logic gate was obtained. The results of this work indicate that, the rise time of CMOS logic gates increases, while the fall time decreases with an increase in total ionizing dose radiation. Also, by increasing the size of the P-channel transistor with respect to that of the N-channel transistor, the propagation delay of CMOS logic gate can be made to decrease with, or be independent of an increase in total ionizing dose radiation. Furthermore, a method was developed for replacing polysilicon feedback resistance of SRAMs with a switched capacitor network. A switched capacitor SRAM was implemented using MOS Technology. The critical change of the switched capacitor SRAM has a very large critical charge. The results of this work indicate that switched capacitor SRAM is a viable alternative to SRAM with polysilicon feedback resistance.

Attia, John Okyere↗

DOE OSTI2023

Trapped-ion entangling gates with bichromatic pair of microwave fields and magnetic field gradient

A trapped-ion quantum logic gate and a method of operating the trapped-ion quantum logic gate are provided. The trapped-ion quantum logic gate includes at least one ion having two internal states and forming a qubit having a qubit transition frequency ω 0 0, a magnetic field gradient, and two microwave fields. Each of the two microwave fields has a respective frequency that is detuned from the qubit transition frequency ω 0 by frequency difference δ. The at least one ion has a Rabi frequency Ω μ due to the two microwave fields and a Rabi frequency Ω g due to the magnetic field gradient. The method includes applying the magnetic field gradient and the two microwave fields to the at least one ion such that a quantity Ω g /δ is in a range between zero and 5×10 −2 .

Sutherland, Robert Tyler↗

NASA NTRS2009

Characterization of 6H-SiC JFET Integrated Circuits Over A Broad Temperature Range from -150 C to +500 C

The NASA Glenn Research Center has previously reported prolonged stable operation of simple prototype 6H-SiC JFET integrated circuits (logic gates and amplifier stages) for thousands of hours at +500 C. This paper experimentally investigates the ability of these 6H-SiC JFET devices and integrated circuits to also function at cold temperatures expected to arise in some envisioned applications. Prototype logic gate ICs experimentally demonstrated good functionality down to -125 C without changing circuit input voltages. Cascaded operation of gates at cold temperatures was verified by externally wiring gates together to form a 3-stage ring oscillator. While logic gate output voltages exhibited little change across the broad temperature range from -125 C to +500 C, the change in operating frequency and power consumption of these non-optimized logic gates as a function of temperature was much larger and tracked JFET channel conduction properties.

Neudeck, Philip G.↗

NASA NTRS2005

NASA Tech Briefs, July 2005

Thin-Film Resistance Heat-Flux Sensors Circuit Indicates that Voice-Recording Disks are Nearly Full Optical Sensing of Combustion Instabilities in Gas Turbines Topics include: Crane-Load Contact Sensor; Hexagonal and Pentagonal Fractal Multiband Antennas; Multifunctional Logic Gate Controlled by Temperature; Multifunctional Logic Gate Controlled by Supply Voltage; Power Divider for Waveforms Rich in Harmonics; SCB Quantum Computers Using iSWAP and 1-Qubit Rotations; CSAM Metrology Software Tool; Update on Rover Sequencing and Visualization Program; Selecting Data from a Star Catalog; Rotating Desk for Collaboration by Two Computer Programmers; Variable-Pressure Washer; Magnetically Attached Multifunction Maintenance Rover; Improvements in Fabrication of Sand/Binder Cores for Casting; Solid Freeform Fabrication of Composite-Material Objects; Efficient Computational Model of Hysteresis; Gauges for Highly Precise Metrology of a Compound Mirror; Improved Electrolytic Hydrogen Peroxide Generator; High-Power Fiber Lasers Using Photonic Band Gap Materials; Ontology-Driven Information Integration; Quantifying Traversability of Terrain for a Mobile Robot; More About Arc-Welding Process for Making Carbon Nanotubes; Controlling Laser Spot Size in Outer Space; or Software-Reconfigurable Processors for Spacecraft.

Source record↗

NASA NTRS1990

Simplified calculation of wave-coupling between lines in high-speed integrated circuits

The construction of time-domain solutions by the superposition of modes is explained for the general case, which may not have any symmetry in the lines or terminations. This simplified method requires that the logic-gate terminal impedances be approximated by linear effective resistances that can be adequately determined by SPICE analysis of the actual logic gates. Several examples of results of crosstalk calculations made by the simplified method are presented and compared with corresponding results obtained using the SPICE transmission-line methods of Tripathi and Rettig (1985) along with full SPICE models of the logic gates. The simplified approach is shown to give satisfactory agreement for most purposes.

Matthaei, George L.↗

NASA NTRS1982

Beyond the supercomputer

A NASA-directed development of massively parallel processor (MPP) computers is outlined, noting intended applications for data processing for near term earth resource and environment mapping, radar, and television transmissions. The MPP is designed to perform 100 billion operations/sec to obtain satisfactory image processing, while separate processing units correct distortions, register images, calculate correlation functions, and classify multispectral characteristics. Arrays of 1s and 0s will be manipulated in analog-to-digital conversions generating separate planes corresponding to powers of binaries. Data wires are replaced by fiber-optic tubes or thousands of wires, and single logic gates are replaced by thousands of logic gates and every memory element by thousands of memory elements. Features of the interconnections and the images control processor units are detailed, along with implementation of sliders for program flexibility.

Schaefer, D. H.↗

NASA NTRS2004

Ultralow-Power Digital Correlator for Microwave Polarimetry

A recently developed high-speed digital correlator is especially well suited for processing readings of a passive microwave polarimeter. This circuit computes the autocorrelations of, and the cross-correlations among, data in four digital input streams representing samples of in-phase (I) and quadrature (Q) components of two intermediate-frequency (IF) signals, denoted A and B, that are generated in heterodyne reception of two microwave signals. The IF signals arriving at the correlator input terminals have been digitized to three levels (-1,0,1) at a sampling rate up to 500 MHz. Two bits (representing sign and magnitude) are needed to represent the instantaneous datum in each input channel; hence, eight bits are needed to represent the four input signals during any given cycle of the sampling clock. The accumulation (integration) time for the correlation is programmable in increments of 2(exp 8) cycles of the sampling clock, up to a maximum of 2(exp 24) cycles. The basic functionality of the correlator is embodied in 16 correlation slices, each of which contains identical logic circuits and counters (see figure). The first stage of each correlation slice is a logic gate that computes one of the desired correlations (for example, the autocorrelation of the I component of A or the negative of the cross-correlation of the I component of A and the Q component of B). The sampling of the output of the logic gate output is controlled by the sampling-clock signal, and an 8-bit counter increments in every clock cycle when the logic gate generates output. The most significant bit of the 8-bit counter is sampled by a 16-bit counter with a clock signal at 2(exp 8) the frequency of the sampling clock. The 16-bit counter is incremented every time the 8-bit counter rolls over.

Piepmeier, Jeffrey R.↗

DOE OSTI2025

Introduction: Neuromorphic Materials

The explosive growth in data collection and the need to process it efficiently, as well as the desire to automate increasingly complex tasks in transportation, medical care, manufacturing, security and many other fields have motivated a growing interest in neuromorphic computing. Unlike the binary, transistorbased ON/OFF logic gates and separate logic and memory functionalities employed in digital computing, neuromorphic computing is inspired by animal brains that use interconnected synapses and neurons to perform processing, storage and transmission of information at the same location, while only consuming ~20 W or less of power. Motivated by the brain’s efficiency, adaptability, self-learning and resiliency qualities, neuromorphic computing can be broadly defined as an approach to processing and storing information using hardware and algorithms inspired by models of biological neural systems. Present research in neuromorphic computing encompasses approaches that vary significantly in their degree of neuro-inspiration, from systems that only incorporate features such as asynchronous, event-driven operation or use crossbar arrays of non-volatile memory (NVM) elements to accelerate deep neural networks (DNNs), to designs that embrace the extreme parallelism, sparsity, reconfigurability, adaptability, complexity and stochasticity observed in nervous systems. The term ‘neuromorphic’ computing is often credited to Carver Mead, who in the 1980s investigated Si-based analog electronics to replicate functions of the animal retina. Earlier important advances in this field include the work of Frank Rosenblatt, who proposed the concept of the perceptron, Bernard Widrow, who used this concept to build one of the first analog neural networks, the Adaline and many other researchers (see ref. 6 for an historical perspective on neuromorphic computing). With the recent increase in the use of artificial intelligence and large language models, and rising concerns over the associated energy costs, interest in neuromorphic hardware has expanded rapidly. According to some estimates, driven largely by the drastic growth in the training use of artificial intelligence (AI) models using the current computing architectures, the energy cost of computing is projected to reach the energy supply worldwide by 2045. Furthermore, while this is not a realistic outcome, it means that, if more efficient computing technologies are not developed -- soon -- the world will soon become one where demand for energy and market constraints limit the continued increase of societal access to AI and cloud services from data centers. Data centers used for training and use of these models consume hundreds of terawatt hours of electricity, already past 4% of the US electricity demand.

Circuits↗

NASA NTRS2006

Metal-Ferroelectric-Semiconductor Field-Effect Transistor NAND Gate Switching Time Analysis

Previous research investigated the modeling of a N Wga te constructed of Metal-Ferroelectric- Semiconductor Field-Effect Transistors (MFSFETs) to obtain voltage transfer curves. The NAND gate was modeled using n-channel MFSFETs with positive polarization for the standard CMOS n-channel transistors and n-channel MFSFETs with negative polarization for the standard CMOS p-channel transistors. This paper investigates the MFSFET NAND gate switching time propagation delay, which is one of the other important parameters required to characterize the performance of a logic gate. Initially, the switching time of an inverter circuit was analyzed. The low-to-high and high-to-low propagation time delays were calculated. During the low-to-high transition, the negatively polarized transistor pulls up the output voltage, and during the high-to-low transition, the positively polarized transistor pulls down the output voltage. The MFSFETs were simulated by using a previously developed model which utilized a partitioned ferroelectric layer. Then the switching time of a 2-input NAND gate was analyzed similarly to the inverter gate. Extension of this technique to more complicated logic gates using MFSFETs will be studied.

Phillips, Thomas A.↗

DOE OSTI2024

Neural units with time-dependent functionality

We show that the time-resolved dynamics of an underdamped harmonic oscillator can be used to do multifunctional computation, performing distinct computations at distinct times within a single dynamical trajectory. We consider the amplitude of an oscillator whose inputs influence its frequency. The activity of the oscillator at fixed times is a nonmonotonic function of its inputs, so it can solve problems such as XOR that are not linearly separable. The activity of the oscillator at fixed input is a nonmonotonic function of time, so it is multifunctional in a temporal sense, and able to carry out distinct nonlinear computations at distinct times within the same dynamical trajectory. We show that a single oscillator, observed at different times, can act as all of the elementary logic gates and perform binary addition, the latter usually implemented in hardware using five logic gates. We show that a set of n oscillators, observed at different times, can perform an arbitrary number of analog-to-n-bit digital conversions. We also show that oscillators can be trained by gradient descent to perform distinct classification tasks at distinct times. Computing with time-dependent functionality can be done in or out of equilibrium, and suggests a way of reducing the number of parameters or devices required to do nonlinear computations.

97 MATHEMATICS AND COMPUTING↗

NASA NTRS1995

A 32-bit Ultrafast Parallel Correlator using Resonant Tunneling Devices

An ultrafast 32-bit pipeline correlator has been implemented using resonant tunneling diodes (RTD) and hetero-junction bipolar transistors (HBT). The negative differential resistance (NDR) characteristics of RTD's is the basis of logic gates with the self-latching property that eliminates pipeline area and delay overheads which limit throughput in conventional technologies. The circuit topology also allows threshold logic functions such as minority/majority to be implemented in a compact manner resulting in reduction of the overall complexity and delay of arbitrary logic circuits. The parallel correlator is an essential component in code division multi-access (CDMA) transceivers used for the continuous calculation of correlation between an incoming data stream and a PN sequence. Simulation results show that a nano-pipelined correlator can provide and effective throughput of one 32-bit correlation every 100 picoseconds, using minimal hardware, with a power dissipation of 1.5 watts. RTD plus HBT based logic gates have been fabricated and the RTD plus HBT based correlator is compared with state of the art complementary metal oxide semiconductor (CMOS) implementations.

Kulkarni, Shriram↗

NASA NTRS1981

CADAT network translator

Program converts cell-net data into logic-gate models for use in test and simulation programs. Input consists of either Place, Route, and Fold (PRF) or Place-and-Route-in-Two-Dimensions (PR2D) layout data deck. Output consists of either Test Pattern Generator (TPG) or Logic-Simulation (LOGSIM) logic circuitry data deck. Designer needs to build only logic-gate-model circuit description since program acts as translator. Language is FORTRAN IV.

Pitts, E. R.↗