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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 73 records · Page 4
All sourcesNASA NTRSDOE OSTI
NASA NTRS2005

Magnetoresistive Flux Focusing Eddy Current Flaw Detection

A giant magnetoresistive flux focusing eddy current device effectively detects deep flaws in thick multilayer conductive materials. The probe uses an excitation coil to induce eddy currents in conducting material perpendicularly oriented to the coil s longitudinal axis. A giant magnetoresistive (GMR) sensor, surrounded by the excitation coil, is used to detect generated fields. Between the excitation coil and GMR sensor is a highly permeable flux focusing lens which magnetically separates the GMR sensor and excitation coil and produces high flux density at the outer edge of the GMR sensor. The use of feedback inside the flux focusing lens enables complete cancellation of the leakage fields at the GMR sensor location and biasing of the GMR sensor to a location of high magnetic field sensitivity. In an alternate embodiment, a permanent magnet is positioned adjacent to the GMR sensor to accomplish the biasing. Experimental results have demonstrated identification of flaws up to 1 cm deep in aluminum alloy structures. To detect deep flaws about circular fasteners or inhomogeneities in thick multi-layer conductive materials, the device is mounted in a hand-held rotating probe assembly that is connected to a computer for system control, data acquisition, processing and storage.

Russell A Wincheski↗
NASA NTRS2005

Magnetoresistive flux focusing eddy current flaw detection

A giant magnetoresistive flux focusing eddy current device effectively detects deep flaws in thick multilayer conductive materials. The probe uses an excitation coil to induce eddy currents in conducting material perpendicularly oriented to the coil's longitudinal axis. A giant magnetoresistive (GMR) sensor, surrounded by the excitation coil, is used to detect generated fields. Between the excitation coil and GMR sensor is a highly permeable flux focusing lens which magnetically separates the GMR sensor and excitation coil and produces high flux density at the outer edge of the GMR sensor. The use of feedback inside the flux focusing lens enables complete cancellation of the leakage fields at the GMR sensor location and biasing of the GMR sensor to a location of high magnetic field sensitivity. In an alternate embodiment, a permanent magnet is positioned adjacent to the GMR sensor to accomplish the biasing. Experimental results have demonstrated identification of flaws up to 1 cm deep in aluminum alloy structures. To detect deep flaws about circular fasteners or inhomogeneities in thick multilayer conductive materials, the device is mounted in a hand-held rotating probe assembly that is connected to a computer for system control, data acquisition, processing and storage.

Wincheski, Russell A.↗
DOE OSTI2022

Positive spin Hall magnetoresistance in single-crystalline Pt/CoO(001) bilayers

Here, the spin Hall magnetoresistance (SMR) effect in single-crystalline Pt/CoO(001) bilayers has been systematically investigated. X-ray magnetic linear dichroism measurements prove that CoO antiferromagnetic (AFM) spins can be switched into the direction orthogonal to the applied field. We find the SMR signal is comprised of two components related to either the switching of CoO AFM Néel order or the applied strong field effect. Both SMR components show a “positive” angular dependence with $R_{∥} > R_{⊥}$, while $R_{∥} (R_{⊥})$ is defined as the resistance with the applied in-plane field parallel (perpendicular) to the current. The observed positive SMR is mainly attributed to the uncompensated spins at the Pt/CoO interface, instead of the CoO AFM spins. Our study may attract a great deal of interest to understand the complicated SMR effect in AFM spintronics materials.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

Electrically Controlled All-Antiferromagnetic Tunnel Junctions on Silicon with Large Room-Temperature Magnetoresistance

Antiferromagnetic (AFM) materials are a pathway to spintronic memory and computing devices with unprecedented speed, energy efficiency, and bit density. Realizing this potential requires AFM devices with simultaneous electrical writing and reading of information, which are also compatible with established silicon-based manufacturing. Recent experiments have shown tunneling magnetoresistance (TMR) readout in epitaxial AFM tunnel junctions. However, these TMR structures are not grown using a silicon-compatible deposition process, and controlling their AFM order required external magnetic fields. Here are shown three-terminal AFM tunnel junctions based on the noncollinear antiferromagnet PtMn 3 , sputter-deposited on silicon. The devices simultaneously exhibit electrical switching using electric currents, and electrical readout by a large room-temperature TMR effect. First-principles calculations explain the TMR in terms of the momentum-resolved spin-dependent tunneling conduction in tunnel junctions with noncollinear AFM electrodes.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Giant Modulation of Magnetoresistance in a Van Der Waals Magnet by In‐Plane Current Injection

Efficient magnetization control is a central issue in magnetism and spintronics. Particularly, there are increasing demands for manipulation of magnetic states in van der Waals (vdW) magnets with unconventional functionalities. However, the electrically induced phase transition between ferromagnetic-to-antiferromagnetic states without external magnetic field is yet to be demonstrated. Here, the current-induced magnetic phase transition in a vdW ferromagnet Fe 5 GeTe 2 is reported. Based on magneto-transport measurements and theoretical analysis, it is demonstrated that transition in the interlayer magnetic coupling occurs through vertical voltage drop between layers induced by current which is attributed to high anisotropy of the resistivity caused by the vdW gaps. Such magnetic phase transition results in giant modulation of the longitudinal magnetoresistance from 5% to 170%. The electrical tunability of the magnetic phase in Fe 5 GeTe 2 with current-in-plane geometry opens a path for electric control of magnetic properties, expanding the ability to use vdW magnets for spintronic applications.

2D magnet↗
DOE OSTI2022

Enhancement of the Magnetoresistance in the Mobility‐Engineered Compensated Metal Pt 5 P 2

Abstract The magnetoresistance (MR) in nonmagnetic materials continues to be a fertile research area in materials science. The search for giant, positive MR has been limited to a rather small window of materials such as high‐mobility semimetals in single‐crystalline form. Here, the observation of a very large positive MR in metallic Pt 5 P 2 in polycrystalline form is reported. The observations reveal that improvement of the crystallinity results in a significant enhancement of the positive MR, exceeding 10 000% at 9 T, comparable to high‐mobility semimetals. Based on first‐principles calculations combined with magnetotransport and thermoelectric measurements, the Fermi surface of Pt 5 P 2 is found to consist of a collection of multiple electron and hole pockets compensating one another, along with a characteristic pocket continuously connected to the adjacent Brillouin zone, together with possible topologically protected band crossings. This work extends the landscape of high MR candidate materials to polycrystalline metals, which demonstrates the importance of crystallinity and purity of the samples for the optimization of the MR.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Manipulation of the Magnetoresistance by Strain in Topological TaSe 3

1D TaSe 3 exhibits many unusual physical properties due to its distorted type-II chains. Ribbon-shaped single crystals can be easily bended along the $b-axis$, forming rings. This study investigates the magnetoresistance (MR) of TaSe 3 up to 60 T in both unbended (ribbon shape) and ring-shaped (bended ribbon) samples. Notable changes are found in the magnetotransport properties between the two different shaped samples. One is that the MR in ring-shaped samples is three orders lower than that in unbended samples under the same sample environment. In addition, linear MR is observed above ≈20 T in ring-shaped samples when the magnetic field is parallel or perpendicular to the rings. Quantum oscillations are also observed as a function of the magnetic field when the magnetic field is applied parallel to rings, possibly due to the Altshuler–Aronov–Spivak effect or the inversion of the lowest Landau level beyond the quantum limit. All these results are related to strain-induced electronic structure change in TaSe 3 , an effective way to tune physical properties in low-dimensional materials.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2025

Large non-saturating Nernst thermopower and magnetoresistance in compensated semimetal ScSb

Today, high-performance thermoelectric and thermomagnetic materials operating in the low-temperature regime, particularly below the boiling point of liquid nitrogen remain scarce. Most thermomagnetic materials reported to date exhibit a strong Nernst signal along specific crystallographic directions in their single-crystal form. However, their performance typically degrades significantly in the polycrystalline form. Here, we report an improved Nernst thermopower of ~ 128 μV/K at 30 K and 14 T in polycrystalline compensated semimetal ScSb, in comparison to that was observed in single crystal ScSb previously. The magnetic field dependence of Nernst thermopower shows a linear and non-saturating behavior up to 14 T. The maximum Nernst power factor reaches to ~ 240 x 10 -4 W m −1 K −2 and Nernst figure of merit reaches to ~ 11 x 10 -4 K −1 . Polycrystalline ScSb also shows a large non-saturating magnetoresistance of ~ 940% at 2 K and 14 T. These enhanced properties originate from better electron–hole compensation, as revealed by Hall resistivity measurements. In conclusion, the cubic symmetry and absence of anisotropy in ScSb allow its polycrystalline form to achieve similar enhanced thermomagnetic and electromagnetic performance comparable to that of the single crystal.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2023

Perpendicular in-plane negative magnetoresistance in ZrTe 5

The unique band structure in topological materials frequently results in unusual magneto-transport phenomena, one of which is in-plane longitudinal negative magnetoresistance (NMR) with the magnetic field aligned parallel to the electrical current direction. This NMR is widely considered as a hallmark of chiral anomaly in topological materials. Here we report the observation of in-plane NMR in the topological material ZrTe 5 when the in-plane magnetic field is both parallel and perpendicular to the current direction, revealing an unusual case of quantum transport beyond the chiral anomaly. We find that a general theoretical model, which considers the combined effect of Berry curvature and orbital moment, can quantitatively explain this in-plane NMR. In conclusion, our results provide new insights into the understanding of in-plane NMR in topological materials.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Disorder driven variations in magnetoresistance and planar Hall effect in Bi 2 Te 3 thin films

The degenerately doped sesquichalcogenide Bi 2 Te 3 , a well-known thermoelectric material, has attracted much attention in recent years as a topological insulator in which conducting surface states lead to exotic electronic transport. Here, in this study, we report the observation of anisotropic magnetoresistance (AMR) and planar Hall effect (PHE) in polycrystalline thin films of Bi 2 Te 3 over a broad range of temperature and magnetic field strength. The values of AMR, PHE and the Hall mobility (μ H ) are compared with results of similar measurements on single crystals and epitaxial films of Bi 2 Te 3 , where these properties are understood in the framework of electronic transport in the topologically protected conducting surface states. Our textured polycrystalline films show a robust metallic character with a carrier density (n s ) and mobility μ H of 9×10 20 cm -3 and 16.7 cm 2 V -1 s -1 respectively. This carrier density is higher and the mobility lower by an order of magnitude compared to the reported values of n s and μ H in epitaxial films and single crystals. However, we see a comparable AMR and PHE in our films for which the concept of conducting surface states is ill-defined due to their polycrystallinity and disordered structure. We suggest that an anisotropic backscattering of charge carriers in the strongly spin – orbit coupled electronic states of this heavy-metal-based non-magnetic compound may lead to the measured resistivity anisotropy. The observation of AMR and PHE in polycrystalline films may be important for scalable production of Bi 2 Te 3 based AMR and PHE sensors of magnetic fields.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Coherent Hopping Transport and Giant Negative Magnetoresistance in Epitaxial CsSnBr 3

Single-crystal inorganic halide perovskites are attracting interest for quantum device applications. Here we present low-temperature quantum magnetotransport measurements on thin film devices of epitaxial single-crystal CsSnBr 3 , which exhibit two-dimensional Mott variable range hopping (VRH) and giant negative magnetoresistance. These findings are described by a model for quantum interference between different directed hopping paths, and we extract the temperature-dependent hopping length of charge carriers, their localization length, and a lower bound for their phase coherence length of ~100 nm at low temperatures. These observations demonstrate that epitaxial halide perovskite devices are emerging as a material class for low-dimensional quantum coherent transport devices.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2020

Tuning Irreversible Magnetoresistance in Pr 0.67 Sr 0.33 MnO 3 Film via Octahedral Rotation

Herein, the oxygen octahedral rotation around the out-of-plane axis is explored to study its effect on metastable status, magnetic cluster glass in manganite. The antiphase rotation around the out-of-plane axis (TiO 6 α Ο α Ο c – ) of SrTiO 3 enhances the Mn–O bond anisotropy along in-plane and out-of-plane directions and weakens the ferromagnetic interactions in a 12 nm Pr 0.67 Sr 0.33 MnO 3 film on the (001) SrTiO 3 substrate, which together promote the formation of magnetic cluster-glassiness and enlarges the irreversible magnetoresistance (MR) effect with enhanced relaxation time of charge carriers. The effect of TiO 6 α Ο α Ο c – in the SrTiO 3 substrate on material properties is obvious with a large irreversible MR effect for thin films, which fades away with the increase in film thickness. At 10 K, the irreversible MR is 0.91 for the 12 nm film and 0.22 for the 30 nm film. This work extends current understanding on interfacial coupling to metastable status and could help explore other systems in the perovskite structure with octahedral rotation.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2026

Large magnetoresistance and quantum oscillations observed in superconducting β -IrSn 4

Diverse quantum phenomena have been observed in TSn 4 transition metal (T) stannides, including superconductivity, nontrivial topology, and large magnetoresistance (MR) at low temperatures. Here, we report the experimental and theoretical investigation of tetragonal β-IrSn 4 (space group I 4 1 /acd) with the lattice parameters a = 6.362(3) Å and c = 22.723(0) Å. The temperature dependence of the electrical resistivity indicates that β-IrSn 4 is a good metal with Fermi-liquid behavior above the superconducting transition at T c ∼ 0.7 K. Magnetic susceptibility measurements indicate it is non-magnetic. However, positive transverse MR with linear field dependence is observed. At T= 2 K and Μ 0 H = 14 T, the MR reaches 700% without sign of saturation. Shubnikov–de Haas oscillations are observed from proximity detector oscillator measurements up to 60 T. We experimentally extract several frequencies, and through comparison to first-principles calculations, identify corresponding electronic bands. For H // c, two strong oscillations, F 1 ≈ 109 and F 2 ≈ 302 T, allow us to determine effective masses 0.266m 0 and 0.300m 0 (m 0 is the free-electron mass), respectively. The topology of these bands is discussed.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Interpreting angle-dependent magnetoresistance in layered materials: Application to cuprates

The evolution of the low-temperature electronic structure of the cuprate metals from the overdoped to the underdoped side has recently been addressed through angle-dependant magnetoresistance (ADMR) experiments in La 1.6-x Nd 0.4 Sr x CuO 4 . Here the results show a striking difference between hole dopings p = 0.24 and p = 0.21, which lie on either side of a putative quantum critical point at intermediate p. Motivated by this, we here study the theory of ADMR in correlated layered materials, paying special attention to the role of angle-dependent quasiparticle weights Z k . Such a Z k is expected to characterize a number of popular models of the cuprate materials, particularly when underdoped. Further, in the limit of weak interlayer hopping the quasiparticle weight will affect the c-axis transport measured in ADMR experiments. We show that proper inclusion of the quasiparticle weight does not support an interpretation of the data in terms of a (π,π) spin density wave ordered state, in agreement with the lack of direct evidence for such order. We show that a simple model of Fermi surface reconfiguring across a van Hove point captures many of the striking differences seen between p = 0.21 and p = 0.24. We comment on why such a model may be appropriate for interpreting the ADMR data, despite having a large Fermi surface at p = 0.21, seemingly in contradiction with other evidence for a small Fermi surface at that doping level.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Extraordinary anisotropic magnetoresistance in CaMnO 3 /CaIrO 3 heterostructures

The realization of four-fold anisotropic magnetoresistance (AMR) in novel 3d-5d heterostructures has boosted major efforts in antiferromagnetic spintronics. However, despite the potential of incorporating strong spin-orbit coupling, only small AMR signals have been detected thus far, prompting a search for new mechanisms to enhance the signal. In this study on CaMnO 3 /CaIrO 3 heterostructures, we report a unique dual-four-fold symmetric 70% AMR; a signal two orders of magnitude larger than previously observed in similar systems. We find that one order is enhanced by tuning a large biaxial anisotropy through octahedral tilts of similar sense in the constituent layers, while the second order is triggered by a spin-flop transition in a nearly Mott-type phase. Dynamics between these two phenomena as evidenced by the step-like AMR and a superimposed biaxial-anisotropy-induced AMR capture a subtle interplay of pseudospin coupling with the lattice and external magnetic field. Furthermore, our study shows that a combination of charge-transfer, interlayer coupling, and a spin-flop transition can yield a giant AMR relevant for sensing and antiferromagnetic memory applications.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Large bilinear magnetoresistance from Rashba spin-splitting on the surface of a topological insulator

In addition to the topologically protected linear dispersion, a band-bending-confined two-dimensional electron gas with tunable Rashba spin-splitting (RSS) was found to coexist with the topological surface states on the surface of topological insulators (TIs). Here, in this paper, we report the observation of large bilinear magnetoresistance (BMR) in Bi 2 ⁢Se 3 films decorated with transition-metal atoms. The magnitude of the BMR sensitively depends on the type and amount of atoms deposited, with a maximum achieved value close to those of strong Rashba semiconductors. Our first-principles calculations reproduce the quantum well states and reveal sizable RSS in all Bi 2 ⁢Se 3 heterostructures with broken inversion symmetry. Our results show that charge-spin interconversion through RSS states in TIs can be fine tuned through surface atom deposition and easily detected via BMR for potential spintronic applications.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

Tunneling magnetoresistance in MgO tunnel junctions with Fe-based leads in empirically corrected density functional theory

The minority-spin Fe/MgO interface states are at the Fermi level in density functional theory (DFT), but experimental evidence and GW calculations place them slightly higher in energy. This small shift can strongly influence tunneling magnetoresistance (TMR) in junctions with a thin MgO barrier and its dependence on the concentration of Co in the electrodes. Here, in this study, an empirical potential correction to DFT is introduced to shift the interface states up to match the tunnel spectroscopy data. With this shift, TMR in Fe/MgO/Fe junctions exceeds 800% and 3000% at 3 and 4 monolayers (ML) of MgO, respectively. We further consider the effect of alloying of the Fe electrodes with up to 30% Co or 10% V, treating them in the coherent potential approximation (CPA). Alloying with Co broadens the interface states and brings a large incoherent minority-spin spectral weight to the Fermi level. Alloying with V brings the minority-spin resonant states close to the Fermi level. However, in both cases the minority-spin spectral weight at the Fermi level resides primarily at the periphery of the Brillouin zone, which is favorable for spin filtering. Using convolutions of k II -resolved barrier densities of states calculated in CPA, it is found that TMR is strongly reduced by alloying with Co or V but still remains above 500% at 4 ML of MgO up to 30% of Co or 5% V. At 5 ML, the TMR increases above 1000% in all systems considered. However, while TMR declines sharply with increasing bias up to 0.2 eV in the tunnel junctions with pure Fe leads, it remains almost constant up to 0.5 eV if leads are alloyed with Co.

74 ATOMIC AND MOLECULAR PHYSICS↗