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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 73 records · Page 4
All sourcesNASA NTRSDOE OSTI
NASA NTRS1988

Radiation resistance and comparative performance of ITO/InP and n/p InP homojunction solar cells

The radiation resistance of ITO/InP cells processed by DC magnetron sputtering is compared to that of standard n/p InP and GaAs homojunction cells. After 20 MeV proton irradiations, it is found that the radiation resistance of the present ITO/InP cell is comparable to that of the n/p homojunction InP cell and that both InP cell types have radiation resistance significantly greater than GaAs. The relatively lower radiation resistance, observed at higher fluence, for the InP cell with the deepest junction depth, is attributed to losses in the cells emitter region. Diode parameters obtained from I sub sc - V sub oc plots, data from surface Raman spectroscopy, and determinations of surface conductivity types are used to investigate the configuration of the ITO/InP cells. It is concluded that thesee latter cells are n/p homojunctions, the n-region consisting of a disordered layer at the oxide semiconductor.

Weinberg, I.↗
NASA NTRS1989

High-efficiency indium tin oxide/indium phosphide solar cells

Improvements in the performance of indium tin oxide (ITO)/indium phosphide solar cells have been realized by the dc magnetron sputter deposition of n-ITO onto an epitaxial p/p(+) structure grown on commercial p(+) bulk substrates. The highest efficiency cells were achieved when the surface of the epilayer was exposed to an Ar/H2 plasma before depositing the bulk of the ITO in a more typical Ar/O2 plasma. With H2 processing, global efficiencies of 18.9 percent were achieved. It is suggested that the excellent performance of these solar cells results from the optimization of the doping, thickness, transport, and surface properties of the p-type base, as well as from better control over the ITO deposition procedure.

Li, X.↗
NASA NTRS1990

Reducing Run-In Wear Of Ceramic-Based Coatings

Silver surface layer helps rough ceramic slide smoothly. Thin film is magnetron-sputtered onto PS200, self-lubricating composite coating containing mixture of chromium carbide, silver, and barium fluoride/calcium fluoride eutectic. Carbide provides wear resistance, while silver and fluorides provide lubrication. Because both silver top coat and PS200 thermally and chemically stable oxidizing and reducing environments to 900 degrees C, combination appropriate as lubrication for cylinder-wall/piston-ring contacts in Stirling engines and for backup lubrication for gas lubricated journal bearings.

Dellacorte, Christopher↗
NASA NTRS1990

Preparation and characteristics of superconducting cuprate thin films: Nd(2-x)Ce(x)CuO4 and substituted Bi-system

Characteristics of the electron-doped-type Nd(2-x)Ce(x)CuO4 systems and substituted Bi2(Sr,Ln)3Cu2Oy system were systematically studied using the high quality thin-film samples. The Nd(2-x)Ce(x)CuO4 thin films with various Ce concentrations, x, were prepared by RF magnetron sputtering on SrTiO3 heated at around 500 C. After subsequent annealing at 1100 C in air, the films showed the c-axis orientation normal to the substrates. By means of the reducing treatment (annealing in a vacuum), superconductivity was induced for the films with 0.14 is less than or equal to x is less than or equal to 0.18. The superconductivity and transport properties of the films were strongly affected by the reducing treatment. The x = 0.15 film exhibited a sharp superconducting transition with zero resistivity at 22 K, in consistent with the diamagnetic properties. The resistivity of the films was fairly low with metallic characteristics, and the sight of the Hall coefficient was negative in the normal state. On the other hand, the normal-state optical measurements showed that the undoped Nd2CuO4 is a semiconductor with a charge transfer gap of 1.3 eV, and that, when Ce ions were doped, a plasma reflection due to the free-carriers came to be seen with the plasma frequency of 1.07 eV for 0.14 is less than or equal to x is less than or equal to 0.18. Moreover, x ray photoemission study revealed that the Cu valence of the film decreased for 2(+) for x = 0 to 1(+) for x = 0.15. These physical properties are in contrast with those of hole-doped-type cuprate superconductors. Bi2(Sr,Ln)3Cu2Oy thin films were also prepared on MgO substrates heated at 600 to 700 C by similar methods. It was found that the growth conditions for Bi-systems with two CuO2 planes were different for each composition and species of lanthanoid in the films. Moreover, preparation of Bi-system with three CuO2 planes was very difficult when lanthanoid atoms were doped in the system. Their electric transport properties and x ray photoemission spectroscopy were investigated. Carrier concentration and Cu valence were discussed with regard to the superconductivity.

Adachi, H.↗
NASA NTRS1988

Radiation resistance and comparative performance of ITO/InP and n/p InP homojunction solar cells

The radiation resistance of ITO/InP cells processed by dc magnetron sputtering is compared to that of standard n/p InP and GaAs homojunction cells. After 20 MeV proton irradiations, it is found that the radiation resistance of the present ITO/InP cell is comparable to that of the n/p homojunction InP cell and that both InP cell types have radiation resistances significantly greater than GaAs. The relatively lower radiation resistance, observed at higher fluence, for the InP cell with the deepest junction depth, is attributed to losses in the cells emitter region. Diode parameters obtained from I sub sc - V sub oc plots, data from surface Raman spectrosocpy, and determinations of surface conductivity type are used to investigate the configuration of the ITO/InP cells. It is concluded that these latter cells are n/p homojunctions, the n-region consisting of a disordered layer at the oxide semiconductor.

Weinberg, I.↗
NASA NTRS1990

Characterization of Iridium Coated Rhenium Used in High-Temperature, Radiation-Cooled Rocket Thrusters

Materials used for radiation-cooled rocket thrusters must be capable of surviving under extreme conditions of high-temperatures and oxidizing environments. While combustion efficiency is optimized at high temperatures, many refractory metals are unsuitable for thruster applications due to rapid material loss from the formation of volatile oxides. This process occurs during thruster operation by reaction of the combustion products with the material surface. Aerojet Technical Systems has developed a thruster cone chamber constructed of Re coated with Ir on the inside surface where exposure to the rocket exhaust occurs. Re maintains its structural integrity at high temperature and the Ir coating is applied as an oxidation barrier. Ir also forms volatile oxide species (IrO2 and IrO3) but at a considerably slower rate than Re. In order to understand the performance limits of Ir-coated Re thrusters, we are investigating the interdiffusion and oxidation kinetics of Ir/Re. The formation of iridium and rhenium oxides has been monitored in situ by Raman spectroscopy during high temperature exposure to oxygen. For pure Ir, the growth of oxide films as thin as approximately 200 A could be easily detected and the formation of IrO2 was observed at temperatures as low as 600 C. Ir/Re diffusion test specimens were prepared by magnetron sputtering of Ir on Re substrates. Concentration profiles were determined by sputter Auger depth profiles of the heat treated specimens. Significant interdiffusion was observed at temperatures as low as 1000 C. Measurements of the activation energy suggest that below 1350 C, the dominant diffusion path is along defects, most likely grain boundaries, rather than bulk diffusion through the grains. The phases that form during interdiffusion have been examined by x ray diffraction. Analysis of heated test specimens indicates that the Ir-Re reaction produces a solid solution phase of Ir dissolved in the HCP structure of Re.

Stulen, R. H.↗
NASA NTRS1991

Fabrication and performance analysis of 4-sq cm indium tin oxide/InP photovoltaic solar cells

Large-area photovoltaic solar cells based on direct current magnetron sputter deposition of indium tin oxide (ITO) into single-crystal p-InP substrates demonstrated both the radiation hardness and high performance necessary for extraterrestrial applications. A small-scale production project was initiated in which approximately 50 ITO/InP cells are being produced. The procedures used in this small-scale production of 4-sq cm ITO/InP cells are presented and discussed. The discussion includes analyses of performance range of all available production cells, and device performance data of the best cells thus far produced. Additionally, processing experience gained from the production of these cells is discussed, indicating other issues that may be encountered when large-scale productions are begun.

Gessert, T. A.↗
NASA NTRS1991

Effect of chromium and phosphorus on the physical properties of iron and titanium-based amorphous metallic alloy films

Amorphous iron and titanium-based alloys containing various amounts of chromium, phosphorus, and boron exhibit high corrosion resistance. Some physical properties of Fe and Ti-based metallic alloy films deposited on a glass substrate by a dc-magnetron sputtering technique are reported. The films were characterized using differential scanning calorimetry, stress analysis, SEM, XRD, SIMS, electron microprobe, and potentiodynamic polarization techniques.

Distefano, S.↗
NASA NTRS1991

Preparation and characteristics of superconducting cuprate thin films: Nd(2-x)Ce(x)CuO4 and substrated Bi-system

Characteristics of the electron-doped-type Nd(sub 2-x)Ce(sub x)CuO4 system and substituted Bi-system were studied using the high quality thin film samples grown by rf magnetron sputtering and/or subsequent heat treatment. The Nd(sub 2-x)Ce(sub x)CuO4 samples with excellent superconducting properties were obtained in thin films and their optical and X-ray photoelectron spectroscopy (XPS) studies were performed with regard to the Ce content and reducing treatment. Substituted BiSr-Ln-Cu-O thin films were prepared and growth conditions for Bi-system with 2-2-1-2 and 2-2-2-2 phases were found. Moreover, a new 2-2-1-2 phase in the simple Bi-Sr-Cu-O system was fabricated by thin film processing and 80 K superconductivity was obtained.

Adachi, H.↗
NASA NTRS1991

Microwave response of high transition temperature superconducting thin films

We have studied the microwave response of YBa2Cu3O(7 - delta), Bi-Sr-Ca-Cu-O, and Tl-Ba-Ca-Cu-O high transition temperature superconducting (HTS) thin films by performing power transmission measurements. These measurements were carried out in the temperature range of 300 K to 20 K and at frequencies within the range of 30 to 40 GHz. Through these measurements we have determined the magnetic penetration depth (lambda), the complex conductivity (sigma(sup *) = sigma(sub 1) - j sigma(sub 2)) and the surface resistance (R(sub s)). An estimate of the intrinsic penetration depth (lambda approx. 121 nm) for the YBa2Cu3O(7 - delta) HTS has been obtained from the film thickness dependence of lambda. This value compares favorably with the best values reported so far (approx. 140 nm) in single crystals and high quality c-axis oriented thin films. Furthermore, it was observed that our technique is sensitive to the intrinsic anisotropy of lambda in this superconductor. Values of lambda are also reported for Bi-based and Tl-based thin films. We observed that for the three types of superconductors, both sigma(sub 1) and sigma(sub 2) increased when cooling the films below their transition temperature. The measured R(sub s) are in good agreement with other R(sub S) values obtained using resonant activity techniques if we assume a quadratic frequency dependence. Our analysis shows that, of the three types of HTS films studied, the YBa2Cu3O(7 - delta) thin film, deposited by laser ablation and off-axis magnetron sputtering are the most promising for microwave applications.

Miranda, Felix Antonio↗
NASA NTRS1992

C-band superconductor/semiconductor hybrid field-effect transistor amplifier on a LaAlO3 substrate

A single-stage C-band superconductor/semiconductor hybrid field-effect transistor amplifier was designed, fabricated, and tested at 77 K. The large area (1 inch x 0.5 inches) high temperature superconducting Tl-Ba-Ca-Cu-O (TBCCO) thin film was rf magnetron sputtered onto a LaAlO3 substrate. The film had a transition temperature of about 92 K after it was patterned and etched. The amplifier showed a gain of 6 dB and a 3 dB bandwidth of 100 MHz centered at 7.9 GHz. An identical gold amplifier circuit was tested at 77 K, and these results are compared with those from the hybrid amplifier.

Nahra, J. J.↗
NASA NTRS1992

Crystalline orientations of Tl2Ba2Ca2Cu3O(x) grains on MgO, SrTiO3, and LaAlO3 substrates

Crystalline orientations of Tl2Ba2Ca2Cu3O(x) grains in magnetron sputtered films on MgO (001), SrTiO3 (001), and LaAlO3 (001) substrates were investigated by scanning electron microscopy. In contrast to the nearly single crystalline films on the lattice matched substrates SrTiO3 and LaAlO3, films on the MgO (001) substrate, being polycrystalline in nature, exhibit several preferred in-plane grain orientations. These orientations agree well with a simplified theory of near-coincidence site lattices between Tl2Ba2Ca2Cu3O(x) and MgO.

Liou, S. H.↗
NASA NTRS1992

Conductor-backed coplanar waveguide resonators of YBa2Cu3O(7-delta) on LaAlO3

Conductor-backed coplanar waveguide (CBCPW) resonators operating at 10.8 GHz have been fabricated from laser ablated and off-axis magnetron sputtered YBa2Cu3O(7-delta) (YBCO) high-temperature superconducting (HTS) thin films on LaAlO3. These resonators were tested in the temperature range from 14 to 92 K. The unloaded quality factor at 77 K of the HTS CBCPW resonators was 3 to 4 times that of a similar gold resonator. To the authors' knowledge, these results represent the first reported measurements of HTS-based CBCPW resonators.

Miranda, Felix A.↗
NASA NTRS1992

Large-area YBa2Cu3O(7-delta) thin films on sapphire for microwave applications

We have deposited YBa2Cu3O(7-delta) (YBCO) films with low microwave surface resistance (Rs) on 5-cm-diam, oxide-buffered sapphire substrates by planar magnetron sputtering. MgO buffer layers are used on M-plane (1 0 -1 0) sapphire, and R-plane (1 -1 0 2) sapphire is buffered by CeO2. Rs values of 450-620 microhms at 77 K and 10 GHz were measured across an entire 5-cm diam YBCO film on M-plane sapphire. For YBCO on R-plane sapphire, Rs values at 77 K and 10 GHz were 950 microohms for a 5-cm-diam wafer and 700 microohms for 1 x 1 sq cm samples.

Cole, B. F.↗
NASA NTRS1991

Joining of materials with engineered interlayers

A reliable method to join a variety of different materials is developed which uses engineered coatings to produce strong bonds by solid-state techniques at low temperatures (300-400 C). The strong bonds are capable of accommodating the strains created between Si and most substrates due to differences in thermal expansion coefficients. The approach encompasses two phases: noble metal compliant interlayers and functionally gradient interlayer bonding. Preliminary results are presented and the Ag interlayer bonds are microstructurally characterized confirming that the planar magnetron sputtered coatings/bonds are fully dense and metallurgically sound.

Challenger, Kenneth D.↗
NASA NTRS1993

Low temperature phase formation of Tl-based superconducting thin films in reduced oxygen atmosphere

Tl-Ba-Cu-Cu-O superconducting thin films were prepared by magnetron sputtering with postannealing in a reduced oxygen atmosphere. Single-phase Tl2Ba2Ca2Cu3O(x) can form on the MgO substrate at 800 C under P(O2) about 0.1 atm. However the phase formation temperature can be affected by the starting composition of the film. Tl1Ba2Ca2Cu3O(x) phase can be formed by simply lowering the Tl2O pressure. The thermal stability of Tl1Ba2Ca2Cu3O(x) phase was studied by resistivity measurements at high temperatures.

Wu, C. Y.↗
NASA NTRS1993

A vacuum (10 exp -9 torr) friction apparatus for determining friction and endurance life of MoS(x) films

An ultrahigh-vacuum tribometer for use in a ball-on-disk configuration was specially designed for measuring the friction and endurance life of magnetron-sputtered solid lubricating MoS(x) films deposited on sputter-cleaned 400 C stainless-steel disks, when slid against a 6-mm-diameter 440 C stainless-steel ball. The results of tests showed that the tribometer performs satisfactorily in unidirectional rotation in vacuum at a pressure of 10 exp -7 Pa, 10 exp -9 torr. Similarities are observed in the life cycle friction behavior and the coefficient of friction as a function of the number of disk revolutions, for MoS(x) films at average Hertzian contact from 0.33 to 0.69 GPa.

Miyoshi, Kazuhisa↗