Search NASA⌕ Search

SEARCH · Search NASA

Results for “measure transport”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 73 records · Page 4
All sourcesNASA NTRSDOE OSTI
DOE OSTI2026

Restoration of weak localization in bilayer graphene by a molecular thin film

Quantum coherent effects can be probed in multilayer graphene through electronic transport measurements at low temperatures. In particular, bilayer graphene (BLG) is known to be susceptible to quantum interference corrections of the conductivity, presenting weak localization at all electronic densities, and dependent on different scattering mechanisms such as those related to the trigonal warping of the electron dispersion near the K and K′ valleys. Proximity effects with a molecular thin film influence these scattering mechanisms, which can be quantified through the known theory of magnetoconductance for BLG. Here, we present electronic transport measurements in a copper-phthalocyanine (CuPc) / BLG / hexagonal boron nitride (h-BN) heterostructure that suggest the restoration of weak localization in BLG, associated to a reduction of trigonal warping effects, that are known to suppress weak localization in BLG. Additionally, we observe a charge transfer of 3.6×10 12 cm −2 from the BLG to the molecules, as well as a very small degradation of the mobility of the BLG/h-BN heterostructure upon the deposition of CuPc. The molecular arrangement of the CuPc thin film is characterized in a control sample through transmission electron microscopy, that we relate to the electronic transport results.

bilayer graphene↗
DOE OSTI2024

Type-II superconductivity at 9K in Pb–Bi alloy

In the present work, we report the synthesis of Pb–Bi alloy with enhanced Tc of up to 9K, which is higher than that of Pb. The alloy is synthesized via a solid-state reaction route in the vacuum-encapsulated quartz tube at 700°C in an automated furnace. The synthesized sample is characterized by X-ray Diffraction(XRD) and Energy dispersive X-ray analysis(EDAX) for its phase purity and elemental composition. Rietveld refinement of XRD reveals that the end product is a majority hexagonal Pb 7 Bi 3 , with minor rhombohedral Bi. The electronic transport measurement shows metallic behavior with the Debye temperature of 108K and a superconductivity transition temperature (T c ) below 9K, which is the maximum to date for any reported Pb–Bi alloy, Pb or Bi at ambient pressure. Partial substitution of Bi at the Pb site may modify the free density of electronic states within the BCS model to attain the optimum T c , which is higher by around 2K from the reported T c of Pb. The superconductor phase diagram derived from magneto-transport measurements reveals that the synthesized alloy is a conventional superconductor with an upper critical field (H c2 ) of 3.9 T, which lies well within the Pauli paramagnetic limit. The magnetization measurements carried out following ZFC(Zero Field Cool) protocols infer that the synthesized alloy is a bulk superconductor below 9K. The isothermal M-H(Magnetization vs. Field) measurements performed below T c establish it as a type-II superconductor. Furthermore, the specific heat capacity measurements show that the Pb–Bi alloy is a strongly coupled bulk superconductor below around 9K with possibly two superconducting gaps.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

Synthesis of Narrow SnTe Nanowires Using Alloy Nanoparticles

Topological crystalline insulator tin telluride (SnTe) provides a rich playground to examine interactions of correlated electronic states, such as ferroelectricity, topological surface states, and superconductivity. The study of SnTe nanowires may lead to even richer physics owing to the one-dimensional (1D) confinement effect and an increased contribution from the topological surface states. Thus, for transport measurements, SnTe nanowires must be synthesized with reduced diameters and high crystalline quality to ensure 1D confinement and phase coherence of the topological surface electrons. Here, we report a facile growth method to produce narrow SnTe nanowires with a high yield using alloy nanoparticles as growth catalysts. The average diameter of the SnTe nanowires grown using alloy nanoparticles is 85 nm, nearly a factor of three reduction compared to the average diameter of 240 nm when using gold nanoparticles as growth catalysts. Transport measurements reveal the effect of the nanowire diameter on the residual resistance ratio and magnetoresistance. Particularly, the ferroelectric transition temperature for SnTe evolves systematically with the nanowire diameter. In situ cryogenic cooling of narrow SnTe nanowires in a transmission electron microscope directly reveals the cubic to rhombohedral structural transition, which is associated with the ferroelectric transition. Thus, these narrow SnTe nanowires represent a model system to study electronic states arising from 1D confinement, such as 1D topological superconductivity and potential multiband superconductivity.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

Reduced Artifact Approach for Determining Diffusion Coefficients in Time-Resolved Microscopy

Ultrafast microscopy methods traditionally assume a Gaussian profile to extract excited state diffusivities from transport measurements. Although this fitting method recovers accurate diffusion coefficients when the point spread function is well-represented by a Gaussian, even minor spatial aberrations introduced by the imaging system cause significant errors in the determined value. To provide a more accurate measure of excited state transport in nano- and microscale materials systems, in this work an alternative analysis protocol is proposed that numerically convolves the Green’s function solution to the diffusion equation with the experimentally measured point spread function. In contrast to the Gaussian fitting approach, the numerical convolution is shown to be robust against artifacts caused by nonideal point spread functions. Furthermore, the numerical convolution approach is highly effective at resolving anisotropic diffusion in modeled data.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2022

Single pair of Weyl nodes in the spin-canted structure of EuCd 2 As 2

We report time reversal symmetry breaking Weyl semimetals are unique among Weyl materials in allowing the minimal number of Weyl points, thus offering the clearest signatures of the associated physics. Here we present neutron diffraction, density-functional theory, and transport measurement results which indicate that EuCd 2 As 2 , under ambient field, strain, and pressure, is such a material with a single pair of Weyl points. Our work reveals a magnetic structure (magnetic space group C2'/m') with Eu moments pointing along the [210] direction in plane and canted ~ 30° out of plane. Density functional theory calculations using this structure show that the observed canting drastically alters the relevant electronic bands, relative to the in-plane order, leading to a single set of well-defined Weyl points. Furthermore, we find the canting angle can tune the distance of the Weyl points above the Fermi level, with the smallest distance at low canting angles. Finally, transport measurements of the anomalous Hall effect and longitudinal magnetoresistance exhibit properties indicative of a chiral anomaly, thus supporting the neutron scattering and DFT results suggesting EuCd 2 As 2 is close to the ideal situation of the Weyl hydrogen atom.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Mapping hidden space-charge distributions across crystalline metal oxide/group IV semiconductor interfaces

The electronic structures of semiconducting heterojunctions are critically dependent on composition including the presence and concentrations of dopants, both intended and unintended. Dopant profiles in the interfacial region can have major effects on band energies which in turn drive transport properties. Here, in this study, we use core-level photoelectron line shapes excited with hard x rays to extract information about electric fields resulting from internal charge transfer in epitaxial La 0.03 Sr 0.97 Zr x Ti 1–x O 3 /Ge(001) (0.1≤x≤0.7) heterostructures. Experiments were carried out for heterojunctions involving both n- and p-type Ge substrates. These heterojunctions were not amenable to electronic characterization of all regions by transport measurements because the doped substrates act as electrical shunts, precluding probing the more resistive films and masking interface conductivity. However, the core-level line shapes were found to be a rich source of information on built-in potentials that exist throughout the heterostructure, and yielded valuable insight into the impact of band bending on band alignment at the buried interfaces. The electronic effects expected for Ge with uniform n- and p-type doping are eclipsed by those of unintended oxygen dopants in the Ge near the interface. This study illustrates the power of hard x-ray photoemission spectroscopy and related modeling to determine electronic structure in material systems for which insight from traditional transport measurements is limited.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Intrinsic quantized anomalous Hall effect in a moiré heterostructure

The quantum anomalous Hall (QAH) effect combines topology and magnetism to produce precisely quantized Hall resistance at zero magnetic field. We report the observation of a QAH effect in twisted bilayer graphene aligned to hexagonal boron nitride. The effect is driven by intrinsic strong interactions, which polarize the electrons into a single spin- and valley-resolved moiré miniband with Chern number C = 1. In contrast to magnetically doped systems, the measured transport energy gap is larger than the Curie temperature for magnetic ordering, and quantization to within 0.1% of the von Klitzing constant persists to temperatures of several kelvin at zero magnetic field. Electrical currents as small as 1 nanoampere controllably switch the magnetic order between states of opposite polarization, forming an electrically rewritable magnetic memory.

Science & Technology - Other Topics↗
DOE OSTI2020

Epitaxial stabilization of ultra thin films of high entropy perovskite

High entropy oxides (HEOs) are a class of materials, containing equimolar portions of five or more transition metal and/or rare-earth elements. We report here about the layer-by-layer growth of HEO [(La 0.2 Pr 0.2 Nd 0.2 Sm 0.2 Eu 0.2 )NiO 3 ] thin films on NdGaO 3 substrates by pulsed laser deposition. The combined characterizations with in situ reflection high energy electron diffraction, atomic force microscopy, and x-ray diffraction affirm the single crystalline nature of the film with smooth surface morphology. The desired +3 oxidation of Ni has been confirmed by an element sensitive x-ray absorption spectroscopy measurement. Temperature dependent electrical transport measurements revealed a first order metal-insulator transition with the transition temperature very similar to the undoped NdNiO 3 . Furthermore, since both these systems have a comparable tolerance factor, this work demonstrates that the electronic behaviors of A-site disordered perovskite-HEOs are primarily controlled by the average tolerance factor.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Measurement of Transport Properties of Woody Biomass Feedstock Particles Before and After Pyrolysis by Numerical Analysis of X-Ray Tomographic Reconstructions

Lignocellulosic biomass has a complex, species-specific microstructure that governs heat and mass transport during conversion processes. A quantitative understanding of the evolution of pore size and structure is critical to optimize conversion processes for biofuel and bio-based chemical production. Further, improving our understanding of the microstructure of biochar coproduct will accelerate development of its myriad applications. This work quantitatively compares the microstructural features and the anisotropic permeabilities of two woody feedstocks, red oak and Douglas fir, using X-ray computed tomography (XCT) before and after the feedstocks are subjected to pyrolysis. Quantitative analysis of the three-dimensional (3D) reconstructions allows for direct calculations of void fractions, pore size distributions and tortuosity factors. Next, 3D images are imported into an immersed boundary based finite volume solver to simulate gas flow through the porous structure and to directly calculate the principal permeabilities along longitudinal, radial, and tangential directions. The permeabilities of native biomass are seen to differ by three to four orders of magnitude in the different principal directions, but we find that this anisotropy is substantially reduced in the biochar formed during pyrolysis. The quantitative transport properties reported here enhance the ability of pyrolysis simulations to account for feedstock-specific effects and thereby provide a useful touchstone for the biorefining community.

09 BIOMASS FUELS↗
DOE OSTI2020

Large spin Hall effect in Si at room temperature

Silicon's weak intrinsic spin-orbit coupling and centrosymmetric crystal structure are a critical bottleneck to the development of Si spintronics, because they lead to an insignificant spin Hall effect (spin current generation) and inverse spin Hall effect (spin current detection). In this work, we undertake current, magnetic field, crystallography dependent magnetoresistance, and magnetothermal transport measurements to study the spin transport behavior in freestanding Si thin films. We observe a large spin Hall magnetoresistance in both $\mathcal{p}$ – Si and $\mathcal{n}$ – Si at room temperature and it is an order of magnitude larger than that of Pt. One explanation of the unexpectedly large and efficient spin Hall effect is spin-phonon coupling instead of spin-orbit coupling. The macroscopic origin of the spin-phonon coupling can be large strain gradients that can exist in the freestanding Si films. This discovery in a light, earth abundant and centrosymmetric material opens a new path of strain engineering to achieve spin dependent properties in technologically highly developed materials.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Measurement of Conduction and Valence Bands g -Factors in a Transition Metal Dichalcogenide Monolayer

The electron valley and spin degree of freedom in monolayer transition-metal dichalcogenides can be manipulated in optical and transport measurements performed in magnetic fields. The key parameter for determining the Zeeman splitting, namely, the separate contribution of the electron and hole g factor, is inaccessible in most measurements. Here we present an original method that gives access to the respective contribution of the conduction and valence band to the measured Zeeman splitting. It exploits the optical selection rules of exciton complexes, in particular the ones involving intervalley phonons, avoiding strong renormalization effects that compromise single particle g -factor determination in transport experiments. These studies yield a direct determination of single band g factors. We measure g c1 = 0.86 ± 0.1, g c2 = 3.84 ± 0.1 for the bottom (top) conduction bands and g v = 6.1 ± 0.1 for the valence band of monolayer WSe 2 . These measurements are helpful for quantitative interpretation of optical and transport measurements performed in magnetic fields. In addition, the measured g factors are valuable input parameters for optimizing band structure calculations of these 2D materials.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Imaging viscous flow of the Dirac fluid in graphene

The electron–hole plasma in charge-neutral graphene is predicted to realize a quantum critical system in which electrical transport features a universal hydrodynamic description, even at room temperature. This quantum critical ‘Dirac fluid’ is expected to have a shear viscosity close to a minimum bound, with an interparticle scattering rate saturating1 at the Planckian time, the shortest possible timescale for particles to relax. Although electrical transport measurements at finite carrier density are consistent with hydrodynamic electron flow in graphene a clear demonstration of viscous flow at the charge-neutrality point remains elusive. In this work, we directly image viscous Dirac fluid flow in graphene at room temperature by measuring the associated stray magnetic field. Nanoscale magnetic imaging is performed using quantum spin magnetometers realized with nitrogen vacancy centres in diamond. Scanning single-spin and wide-field magnetometry reveal a parabolic Poiseuille profile for electron flow in a high-mobility graphene channel near the charge-neutrality point, establishing the viscous transport of the Dirac fluid. This measurement is in contrast to the conventional uniform flow profile imaged in a metallic conductor and also in a low-mobility graphene channel. Furthermore, via combined imaging and transport measurements, we obtain viscosity and scattering rates, and observe that these quantities are comparable to the universal values expected at quantum criticality. This finding establishes a nearly ideal electron fluid in charge-neutral, high-mobility graphene at room temperature4. Our results will enable the study of hydrodynamic transport in quantum critical fluids relevant to strongly correlated electrons in high-temperature superconductors9. This work also highlights the capability of quantum spin magnetometers to probe correlated electronic phenomena at the nanoscale.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2023

Chiral photocurrent in a Quasi-1D TiS 3 (001) phototransistor

The presence of in-plane chiral effects, hence spin–orbit coupling, is evident in the changes in the photocurrent produced in a TiS 3 (001) field-effect phototransistor with left versus right circularly polarized light. The direction of the photocurrent is protected by the presence of strong spin–orbit coupling and the anisotropy of the band structure as indicated in NanoARPES measurements. As hsown here, dark electronic transport measurements indicate that TiS 3 is n-type and has an electron mobility in the range of 1–6 cm 2 V –1 s –1 . I–V measurements under laser illumination indicate the photocurrent exhibits a bias directionality dependence, reminiscent of bipolar spin diode behavior. Because the TiS 3 contains no heavy elements, the presence of spin–orbit coupling must be attributed to the observed loss of inversion symmetry at the TiS 3 (001) surface.

Phototransistor Materials↗