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At least 73 records · Page 4

Fabrication of an Absorber-Coupled MKID Detector

Absorber-coupled microwave kinetic inductance detector (MKID) arrays were developed for submillimeter and far-infrared astronomy. These sensors comprise arrays of lambda/2 stepped microwave impedance resonators patterned on a 1.5-mm-thick silicon membrane, which is optimized for optical coupling. The detector elements are supported on a 380-mm-thick micro-machined silicon wafer. The resonators consist of parallel plate aluminum transmission lines coupled to low-impedance Nb microstrip traces of variable length, which set the resonant frequency of each resonator. This allows for multiplexed microwave readout and, consequently, good spatial discrimination between pixels in the array. The transmission lines simultaneously act to absorb optical power and employ an appropriate surface impedance and effective filling fraction. The fabrication techniques demonstrate high-fabrication yield of MKID arrays on large, single-crystal membranes and sub-micron front-to-back alignment of the micro strip circuit. An MKID is a detector that operates upon the principle that a superconducting material s kinetic inductance and surface resistance will change in response to being exposed to radiation with a power density sufficient to break its Cooper pairs. When integrated as part of a resonant circuit, the change in surface impedance will result in a shift in its resonance frequency and a decrease of its quality factor. In this approach, incident power creates quasiparticles inside a superconducting resonator, which is configured to match the impedance of free space in order to absorb the radiation being detected. For this reason MKIDs are attractive for use in large-format focal plane arrays, because they are easily multiplexed in the frequency domain and their fabrication is straightforward. The fabrication process can be summarized in seven steps: (1) Alignment marks are lithographically patterned and etched all the way through a silicon on insulator (SOI) wafer, which consists of a thin silicon membrane bonded to a thick silicon handle wafer. (2) The metal microwave circuitry on the front of the membrane is patterned and etched. (3) The wafer is then temporarily bonded with wafer wax to a Pyrex wafer, with the SOI side abutting the Pyrex. (4) The silicon handle component of the SOI wafer is subsequently etched away so as to expose the membrane backside. (5) The wafer is flipped over, and metal microwave circuitry is patterned and etched on the membrane backside. Furthermore, cuts in the membrane are made so as to define the individual detector array chips. (6) Silicon frames are micromachined and glued to the silicon membrane. (7) The membranes, which are now attached to the frames, are released from the Pyrex wafer via dissolution of the wafer wax in acetone.

Brown, Ari↗

"The Design of a Compact, Wide Spurious-Suppression Bandwidth Bandpass Filter Using Stepped Impedance Resonators"

We propose an analytical design for a microstrip broadband spurious-suppression filter. The proposed design uses every section of the transmission lines as both a coupling and a spurious suppression element, which creates a very compact, planar filter. While a traditional filter length is greater than the multiple of the quarter wavelength at the center passband frequency (lambda(sub g)/4), the proposed filter length is less than (order n(Ssup th) + l)center dot lambda(sub g)/8. The filter s spurious response and physical dimension are controlled by the step impedance ratio (R) between two transmission line sections as a lambda(sub g)/4 resonator. The experimental result shows that, with R of 0.2, the out-of-band attenuation is greater than 40 dB; and the first spurious mode is shifted to more than 5 times the fundamental frequency. Moreover, it is the most compact planar filter design to date. The results also indicate a low in-band insertion loss.

U-Yen, Kongpop↗

Dispersion in Nb microstrip transmission lines at submillimeter wave frequencies

We have measured the effects of dispersion on the resonant mode frequencies of open-ended Nb-SiO(x)-Nb microstrip transmission lines over a frequency range from 50 to 800 GHz. Submicron Nb/Al-AlOx/Nb Josephson junctions were used as both voltage-controlled oscillators and detectors to sample the high order modes of the resonators. The resonator modes are equally spaced up to about 550 GHz where the mode spacing start to decrease gradually to a minimum above the gap frequency of about 700 GHz and then increases. Results are in good agreement with the expected theoretical behavior based on the Mattis-Bardeen conductivity of the superconductor line.

Javadi, H. H. S.↗

Fabrication Development for SPT-SLIM, a Superconducting Spectrometer for Line Intensity Mapping

Line Intensity Mapping (LIM) is a new observational technique that uses low-resolution observations of line emission to efficiently trace the large-scale structure of the Universe out to high redshift. Common mm/sub-mm emission lines are accessible from ground-based observatories, and the requirements on the detectors for LIM at mm-wavelengths are well matched to the capabilities of large-format arrays of superconducting sensors. We describe the development of an R = lambda/Delta lambda = 300 on-chip superconducting filter-bank spectrometer covering the 120-180 GHz band for future mm-LIM experiments, focusing on SPT-SLIM, a pathfinder LIM instrument for the South Pole Telescope. Radiation is coupled from the telescope optical system to the spectrometer chip via an array of feedhorn-coupled orthomode transducers. Superconducting microstrip transmission lines then carry the signal to an array of channelizing half-wavelength resonators, and the output of each spectral channel is sensed by a lumped element kinetic inductance detector (leKID). Key areas of development include incorporating new low-loss dielectrics to improve both the achievable spectral resolution and optical efficiency and development of a robust fabrication process to create a galvanic connection between ultra-pure superconducting thin-films to realize multi-material (hybrid) leKIDs. We provide an overview of the spectrometer design, fabrication process, and prototype devices.

microstrip resonators↗

Characterization of MKIDs for CMB Observation at 220 GHz With the South Pole Telescope

We present an updated design of the 220 GHz microwave kinetic inductance detector (MKID) pixel for SPT-3G+, the next-generation camera for the South Pole Telescope. We show results of the dark testing of a 63-pixel array with mean inductor quality factor $Q_{i} = 4.8 \times 10^{5}$, aluminum inductor transition temperature $T_{c} = 1.19$K, and kinetic inductance fraction $\alpha _{k} = 0.32$. We optically characterize both the microstrip-coupled and CPW-coupled resonators, and find both have a spectral response close to prediction with an optical efficiency of $\eta \sim 70\%$. However, we find slightly lower optical response on the lower edge of the band than predicted, with neighboring dark detectors showing more response in this region, though at level consistent with less than 5% frequency shift relative to the optical detectors. The detectors show polarized response consistent with expectations, with a cross-polar response of $\sim 10\%$for both detector orientations.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

Arrays of Carbon Nanotubes as RF Filters in Waveguides

Brushlike arrays of carbon nanotubes embedded in microstrip waveguides provide highly efficient (high-Q) mechanical resonators that will enable ultraminiature radio-frequency (RF) integrated circuits. In its basic form, this invention is an RF filter based on a carbon nanotube array embedded in a microstrip (or coplanar) waveguide, as shown in Figure 1. In addition, arrays of these nanotube-based RF filters can be used as an RF filter bank. Applications of this new nanotube array device include a variety of communications and signal-processing technologies. High-Q resonators are essential for stable, low-noise communications, and radar applications. Mechanical oscillators can exhibit orders of magnitude higher Qs than electronic resonant circuits, which are limited by resistive losses. This has motivated the development of a variety of mechanical resonators, including bulk acoustic wave (BAW) resonators, surface acoustic wave (SAW) resonators, and Si and SiC micromachined resonators (known as microelectromechanical systems or MEMS). There is also a strong push to extend the resonant frequencies of these oscillators into the GHz regime of state-of-the-art electronics. Unfortunately, the BAW and SAW devices tend to be large and are not easily integrated into electronic circuits. MEMS structures have been integrated into circuits, but efforts to extend MEMS resonant frequencies into the GHz regime have been difficult because of scaling problems with the capacitively-coupled drive and readout. In contrast, the proposed devices would be much smaller and hence could be more readily incorporated into advanced RF (more specifically, microwave) integrated circuits.

Hoppe, Daniel↗

Analysis of rectangular microstrip antennas

The problem of microstrip antennas covered by a dielectric substrate is formulated in terms of coupled integro-differential equations with the current distribution on the conducting patch as an unknown quantity. The Galerkin method is used to solve for the unknown patch current. Using the present formulation, the radiation pattern, the resonant frequency, and the bandwidth of a rectangular microstrip antenna are computed. Design data for a rectangular microstrip antenna are also presented.

Bailey, M. C.↗

Influence of the Biasing Scheme on the Performance of Au/SrTiO3/LaAlO3 Thin Film Conductor/Ferroelectric Tunable Ring Resonators

The performance of gold/SrTio3 /LaAlO3 conductor/ferroelectric/dielectric side-coupled, tunable ring resonators at K-band frequencies is presented. The tunability of these rings arises from the sensitivity of the relative dielectric constant (Er) of SrTiO 3 to changes in temperature and dc electric fields (E). We observed that the change in F-, which takes place by biasing the ring up to 450 V alters the effective dielectric constant (e-eff) of the circuit resulting in a 3k resonant frequency shift of nearly 12 % at 77 K. By applying a separate dc bias between the microstrip line and the ring, one can optimize their coupling to obtain bandstop resonators with unloaded quality factors (Q(sub o)) as high as 12,000. The 31 resonance was tuned from 15.75 to 17.41 GHz while keeping Q. above 768 over this range. The relevance of these results for practical microwave components will be discussed.

VanKeuls, F. W.↗

Symmetric Absorber-Coupled Far-Infrared Microwave Kinetic Inductance Detector

The present invention relates to a symmetric absorber-coupled far-infrared microwave kinetic inductance detector including: a membrane having an absorber disposed thereon in a symmetric cross bar pattern; and a microstrip including a plurality of conductor microstrip lines disposed along all edges of the membrane, and separated from a ground plane by the membrane. The conducting microstrip lines are made from niobium, and the pattern is made from a superconducting material with a transition temperature below niobium, including one of aluminum, titanium nitride, or molybdenum nitride. The pattern is disposed on both a top and a bottom of the membrane, and creates a parallel-plate coupled transmission line on the membrane that acts as a half-wavelength resonator at readout frequencies. The parallel-plate coupled transmission line and the conductor microstrip lines form a stepped impedance resonator. The pattern provides identical power absorption for both horizontal and vertical polarization signals.

U-yen, Kongpop↗

An experimental study of high Tc superconducting microstrip transmission lines at 35 GHz and the effect of film morphology

Microstrip transmission lines in the form of ring resonators were fabricated from a number of in-situ grown laser ablated films and post-annealed co-sputtered YBa2Cu3O(7-x) films. The properties of these resonators were measured at 35 GHz and the observed performance is examined in light of the critical temperature (Tc) and film thickness and also the film morphology which is different for the two deposition techniques. It is found that Tc is a major indicator of the film performance for each growth type with film thickness becoming important as it decreases towards 100 A. It is also found that the films with a mixed grain orientation (both a axis and c axis oriented grains) have poorer microwave properties as compared with the primarily c axis oriented material. This is probably due to the significant number of grain boundaries between the different crystallites, which may act as superconducting weak links and contribute to the surface resistance.

Chorey, C. M.↗

An experimental study of high Tc superconducting microstrip transmission lines at 35 GHz and the effect of film morphology

Microstrip transmission lines in the form of ring resonators were fabricated from a number of in-situ grown laser ablated films and post-annealed co-sputtered YBa2Cu3O(7-x) films. The properties of these resonators were measured at 35 GHz and the observed performance is examined in light of the critical temperature (Tc) and film thickness, and also the film morphology, which is different for the two deposition techniques. It is found that Tc is a major indicator of the film performance for each growth type, with film thickness becoming important as it decreases towards 1000 A. It is also found that the films with a mixed grain orientation (both a-axis and c-axis oriented grains) have poorer microwave properties as compared with the primarily c-axis oriented material. This is probably due to the significant number of grain boundaries between the different crystallites, which may act as superconducting weak links and contribute to the surface resistance.

Chorey, C. M.↗

Microwave characterization of slotline on high resistivity silicon for antenna feed network

Conventional silicon wafers have low resistivity and consequently unacceptably high value of dielectric attenuation constant. Microwave circuits for phased array antenna systems fabricated on these wafers therefore have low efficiency. By choosing a silicon substrate with sufficiently high resistivity it is possible to make the dielectric attenuation constant of the interconnecting microwave transmission lines approach those of GaAs or InP. In order for this to be possible, the transmission lines must be characterized. In this presentation, the effective dielectric constant (epsilon sub eff) and attenuation constant (alpha) of a slotline on high resistivity (5000 to 10 000 ohm-cm) silicon wafer will be discussed. The epsilon sub eff and alpha are determined from the measured resonant frequencies and the corresponding insertion loss of a slotline ring resonator. The results for slotline will be compared with microstrip line and coplanar waveguide.

Simons, Rainee N.↗

Magnetometry in a diamond anvil cell using nitrogen vacancy centers in a nanodiamond ensemble

The emerging field of optical magnetometry utilizing negative-charged nitrogen vacancy (NV – ) centers provides a highly sensitive lab bench technique for spatially resolved physical property measurements. Their implementation in high pressure diamond anvil cell (DAC) environments will become common as other techniques are often limited due to the spatial constraints of the sample chamber. Apparatus and techniques are described here permitting for more general use of magnetic field measurements inside a DAC using continuous wave optical detected magnetic resonance in NV – centers in a layer of nanodiamonds. A microstrip antenna delivers a uniform microwave field to the DAC and is compatible with simple metal gaskets, and the sensor layer of deposited nanodiamonds allows for simple determination of the magnetic field magnitude for B in the 1–100 G range. The ferromagnetic transition in iron at 18 GPa is measured with the apparatus, along with its hysteretic response.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

The Millimeter-Wave Properties of Superconducting Microstrip Lines

We have developed a novel technique for making high quality measurements of the millimeter-wave properties of superconducting thin-film microstrip transmission lines. Our experimental technique currently covers the 75-100 GHz band. The method is based on standing wave resonances in an open ended transmission line. We obtain information on the phase velocity and loss of the microstrip. Our data for Nb/SiO/Nb lines, taken at 4.2 K and 1.6 K, can be explained by a single set of physical parameters. Our preliminary conclusion is that the loss is dominated by the SiO dielectric, with a temperature-independent loss tangent of 5.3 +/- 0.5 x 10(exp -3) for our samples.

Vayonakis, A.↗

A parallel-series-fed microstrip array with high efficiency and low cross-polarization

The requirements of a microstrip array with a vertically polarized fan beam are addressed that correspond to its use in C-band interferometric SAR. A combination of parallel- and series-feed techniques are utilized in an array design with a three-stage parallel-fed configuration to enhance bandwidth performance. The linearly polarized traveling-wave microstrip array antenna is fed by microstrip transmission lines in two rows of 36 elements that resonate at 5.30 GHz. The transmission lines are impedance-matched at every junction for all the waves that travel toward the two ends of the array. The two measured principal-plane patterns are shown, and the measured narrow-beam pattern is found to agree with the calculated values. The VSWR bandwidths and narrow and broad beamwidths of the antenna are found to permit efficient performance. The efficiency is attributed to the parallel and series-feed configuration which allows proper impedance matching, and low cross-polarization is a result of the antiphase feed technique employed in the configuration.

Huang, John↗

A dual frequency microstrip antenna for Ka band

For fixed satellite communication systems at Ka band with downlink at 17.7 to 20.2 GHz and uplink at 27.5 to 30.0 GHz, the focused optics and the unfocused optics configurations with monolithic phased array feeds have often been used to provide multiple fixed and multiple scanning spot beam coverages. It appears that a dual frequency microstrip antenna capable of transmitting and receiving simultaneously is highly desirable as an array feed element. This paper describes some early efforts on the development and experimental testing of a dual frequency annular microstrip antenna. The antenna has potential application for use in conjunction with a monolithic microwave integrated circuit device as an active radiating element in a phased array of phased array feeds. The antenna is designed to resonate at TM sub 12 and TM sub 13 modes and tuned with a circumferential microstrip ring to vary the frequency ratio. Radiation characteristics at both the high and low frequencies are examined. Experimental results including radiating patterns and swept frequency measurements are presented.

Lee, R. Q.↗

Tunable Microstrip Filters Using Selectively Etched Ferroelectric Thin-Film Varactors for Coupling

We report on the use of patterned ferroelectric films to fabricate proof of concept tunable one-pole microstrip filters with excellent transmission and mismatch/reflection properties at frequencies up to 24 GHz. By controlling the electric field distribution within the coupling region between the resonator and input/output lines, sufficiently high loaded and unloaded Q values are maintained so as to be useful for microstrip filter design, with low mismatch loss. In the 23 - 24 GHz region, the filter was tunable over a 100 MHz range, the loaded and unloaded Q values were 29 and 68, respectively, and the reflection losses were below -16 dB, which demonstrates the suitability of these films for practical microwave applications.

Mueller, Carl H.↗