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At least 73 records · Page 4

Flexible Multiferroic Bulk Heterojunction with Giant Magnetoelectric Coupling via van der Waals Epitaxy

Magnetoelectric nanocomposites have been a topic of intense research due to their profound potential in the applications of electronic devices based on spintronic technology. Nevertheless, in spite of significant progress made in the growth of high-quality nanocomposite thin films, the substrate clamping effect still remains a major hurdle in realizing the ultimate magnetoelectric coupling. To overcome this obstacle, an alternative strategy of fabricating a self-assembled ferroelectric–ferrimagnetic bulk heterojunction on a flexible muscovite via van der Waals epitaxy is adopted. In this paper, we investigated the magnetoelectric coupling in a self-assembled BiFeO 3 (BFO)–CoFe 2 O 4 (CFO) bulk heterojunction epitaxially grown on a flexible muscovite substrate. The obtained heterojunction is composed of vertically aligned multiferroic BFO nanopillars embedded in a ferrimagnetic CFO matrix. Moreover, due to the weak interaction between the flexible substrate and bulk heterojunction, the interface is incoherent and, hence, the substrate clamping effect is greatly reduced. The phase-field simulation model also complements our results. The magnetic and electrical characterizations highlight the improvement in magnetoelectric coupling of the BFO–CFO bulk heterojunction. A magnetoelectric coupling coefficient of 74 mV/cm·Oe of this bulk heterojunction is larger than the magnetoelectric coefficient reported earlier on flexible substrates. Finally and therefore, this study delivers a viable route of fabricating a remarkable magnetoelectric heterojunction and yet flexible electronic devices that are robust against extreme conditions with optimized performance.

36 MATERIALS SCIENCE↗

Final Technical Report: Collaborative Research. Polymeric Muliferroics

The goal of this project is to investigate room temperature magnetism and magnetoelectric coupling of polymeric multiferroics. A new family of organic charge-transfer complexes has been emerged as a fascinating opportunity for the development of all-organic electrics and spintronics due to its weak hyperfine interaction and low spin-orbit coupling; nevertheless, direct observations of room temperature magnetic spin ordering have yet to be accomplished in organic charge-transfer complexes. Furthermore, room temperature magnetoelectric coupling effect hitherto known multiferroics, is anticipated in organic donor-acceptor complexes because of magnetic field effects on charge-transfer dipoles, yet this is also unexplored. The PIs seek to fundamental understanding of the synthetic control of organic complexes to demonstrate and explore room temperature multiferroicity.

36 MATERIALS SCIENCE↗

Electrical control of magnetism by electric field and current-induced torques

The remanent magnetization of ferromagnets has long been studied and used to store binary information. While early magnetic memory designs relied on magnetization switching by locally generated magnetic fields, key insights in condensed matter physics later suggested the possibility of doing it by electrical means instead. In the 1990s, Slonczewski and Berger formulated the concept of current-induced spin torques in magnetic multilayers through which a spin-polarized current generated by a first ferromagnet may be used to switch the magnetization of a second one. This discovery drove the development of spin-transfer-torque magnetic random-access memories (MRAMs). More recent fundamental research revealed other types of current-induced torques named spin-orbit torques (SOTs) and will lead to a new generation of devices including SOT MRAMs and skyrmion-based devices. Parallel to these advances, multiferroics and their magnetoelectric coupling, first investigated experimentally in the 1960s, experienced a renaissance. Dozens of multiferroic compounds with new magnetoelectric coupling mechanisms were discovered and high-quality multiferroic films were synthesized (notably of BiFeO 3 ), also leading to novel device concepts for information and communication technology such as the magnetoelectric spin-orbit (MESO) transistor. The story of the electrical switching of magnetization, which is discussed in this review, is that of a dance between fundamental research (in spintronics, condensed matter physics, and materials science) and technology (MRAMs, MESO transistors, microwave emitters, spin diodes, skyrmion-based devices, components for neuromorphics, etc.). This pas de deux has led to major scientific and technological breakthroughs in recent decades (such as the conceptualization of pure spin currents, the observation of magnetic skyrmions, and the discovery of spin-charge interconversion effects). As a result, this field has not only propelled MRAMs into consumer electronics products but also fueled discoveries in adjacent research areas such as ferroelectrics or magnonics. Here, in this review, recent advances in the control of magnetism by electric fields and by current-induced torques are covered. Fundamental concepts in these two directions are reviewed first, their combination is then discussed, and finally current various families of devices harnessing the electrical control of magnetic properties for various application fields are addressed. The review concludes by giving perspectives in terms of both emerging fundamental physics concepts and new directions in materials science.

36 MATERIALS SCIENCE↗

Electric field control of magnetism using BiFeO{sub 3}-based heterostructures

Conventional CMOS based logic and magnetic based data storage devices require the shuttling of electrons for data processing and storage. As these devices are scaled to increasingly smaller dimensions in the pursuit of speed and storage density, significant energy dissipation in the form of heat has become a center stage issue for the microelectronics industry. By taking advantage of the strong correlations between ferroic orders in multiferroics, specifically the coupling between ferroelectric and magnetic orders (magnetoelectricity), new device functionalities with ultra-low energy consumption can be envisioned. In this article, we review the advances and highlight challenges toward this goal with a particular focus on the room temperature magnetoelectric multiferroic, BiFeO{sub 3}, exchange coupled to a ferromagnet. We summarize our understanding of the nature of exchange coupling and the mechanisms of the voltage control of ferromagnetism observed in these heterostructures.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Strain transfer in porous multiferroic composites of CoFe 2 O 4 and PbZr x Ti 1- x O 3

This manuscript examines the mechanism of strain-coupling in a multiferroic composite of mesoporous cobalt ferrite (CFO), conformally filled with lead zirconate titanate (PZT). We find that when the composites are electrically poled, remanent strain from the piezoelectric PZT layer can be transferred to the magnetostrictive CFO layer. X-ray diffraction shows that this strain transfer is greatest in the most porous samples, in agreement with magnetometry measurements, which show the greatest change in sample saturation magnetization in the most porous samples. In conclusion, strain analysis shows that porosity both accommodates greater lattice strain and mitigates the effects of substrate clamping in thin film strain-coupled composites.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Stability of spin-driven ferroelectricity in the thin-film limit: Coupling of magnetic and electric order in multiferroic TbMnO3 films

We demonstrate spin-spiral-induced ferroelectricity in epitaxial TbMnO3 films grown on YAlO3 substrates down to a film thickness of 6nm. The ferroelectric polarization is identified by optical second-harmonic generation. Using x-ray resonant magnetic scattering we directly prove the existence of a noncollinear magnetic structure in the ferroelectric phase and thus bulk-like multiferroicity. The electric-field-induced reversal of the magnetic domains along with the reversal of the ferroelectric polarization evidences the rigid coupling of magnetic and ferroelectric order and hence a giant magnetoelectric effect in the films.

Becher, Carsten↗

Magnetoelectric coupling and spin-dependent tunneling in Fe/PbTiO{sub 3}/Fe multiferroic heterostructure with a Ni monolayer inserted at one interface

We report on first-principles calculations of a Ni monolayer inserted at one interface in the epitaxial Fe/PbTiO{sub 3}/Fe multiferroic heterostructure, focusing on the magnetoelectric coupling and the spin-dependent transport properties. The results of magnetoelectric coupling calculations reveal an attractive approach to realize cumulative magnetoelectric effects in the ferromagnetic/ferroelectric/ferromagnetic superlattices. The underlying physics is attributed to the combinations of several different magnetoelectric coupling mechanisms such as interface bonding, spin-dependent screening, and different types of magnetic interactions. We also demonstrate that inserting a Ni monolayer at one interface in the Fe/PbTiO{sub 3}/Fe multiferroic tunnel junction is an efficient method to produce considerable tunneling electroresistance effect by modifying the tunnel potential barrier and the interfacial electronic structure. Furthermore, coexistence of tunneling magnetoresistance and tunneling electroresistance leads to the emergence of four distinct resistance states, which can be served as a multistate-storage device. The complicated influencing factors including bulk properties of the ferromagnetic electrodes, decay rates of the evanescent states in the tunnel barrier, and the specific interfacial electronic structure provide us promising opportunities to design novel multiferroic tunnel junctions with excellent performances.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Freestanding BaTiO 3 ‐Au Vertically Aligned Nanocomposite toward Flexible Multi‐Sensing Platform

Abstract Flexible and wearable sensors show enormous potential for personalized healthcare devices by real‐time monitoring of an individual's health. Typically, a single functional material is selected for one sensor to sense a particular physical signal while multiple materials will be selected for multi‐mode sensing. Vertically aligned nanocomposites (VANs) have recently demonstrated various material combinations and novel coupled multifunctionalities that are hard to achieve in any single‐phase material alone, including multiphase multiferroics, magneto‐optic coupling, and strong magnetic and optical anisotropy. Integrating these novel VANs into wearable sensors shows enormous potential in multi‐mode sensing owing to their multifunctional nature. In this work, the transfer of VANs onto polydimethylsiloxane as a novel flexible chemical and pressure sensor is demonstrated. For this demonstration, the classical BaTiO 3 ‐Au VAN with combined plasmonic and piezoelectric properties is used to demonstrate a multi‐sensing mechanism. A thin water‐soluble buffer of Sr 3 Al 2 O 6 serves as a buffer layer for the epitaxial growth and transfer process. The electrical output based on the piezoelectric responses and identifying 4‐mercaptobenzoic acid by surface‐enhanced Raman spectroscopy reveal great potential for free‐standing VANs in a wearable multifunctional sensing platform.

Tsai, Benson Kunhung [School of Materials Engineer↗

Designing switchable near room-temperature multiferroics via the discovery of a novel magnetoelectric coupling

Magnetoelectric (ME) coupling is the key ingredient for realizing the cross-control of magnetism and ferroelectricity in multiferroics. However, multiferroics are not only rare, especially at room-temperature, in nature but also the overwhelming majority of known multiferroics do not exhibit highly-desired switching of the direction of magnetization when the polarization is reversed by an electric field. Here, we report group theory analysis and ab initio calculations demonstrating, and revealing the origin of, the existence of a novel form of ME coupling term in a specific class of materials that does allow such switching. This term naturally explains the previously observed electric field control of magnetism in the first known multiferroics, i.e., the Ni–X boracite family. It is also presently used to design a switchable near room-temperature multiferroic (namely, LaSrMnOsO6 perovskite) having rather large ferroelectric polarization and spontaneous magnetization, as well as strong ME coupling.

36 MATERIALS SCIENCE↗

Engineering of Ferroic Orders in Thin Films by Anionic Substitution

Multiferroics are a unique class of materials where magnetic and ferroelectric orders coexist. The research on multiferroics contributes significantly to the fundamental understanding of the strong correlations between different material degrees of freedom and provides an energy-efficient route toward the electrical control of magnetism. While multiple ABO 3 oxide perovskites are identified as being multiferroic, their magnetoelectric coupling strength is often weak, necessitating the material search in different compounds. Here, the observation of room-temperature multiferroic orders in multi-anion SrNbO 3-x N x thin films is reported. In these samples, the multi-anion state enables the room-temperature ferromagnetic ordering of the Nb d-electrons. Simultaneously, ferroelectric responses that originate from the structural symmetry breaking associated are found with both the off-center displacements of Nb and the geometric displacements of Sr, depending on the relative O-N arrangements within the Nb-centered octahedra. So findings not only diversify the available multiferroic material pool but also demonstrate a new multiferroism design strategy via multi-anion engineering.

thin-films↗

Room temperature magnetoelectric coupling in BaTi{sub 1−x}Cr{sub x}O{sub 3} multiferroic thin films

We report on room temperature (RT) magnetoelectric coupling in tetragonal BaTi{sub 1−x}Cr{sub x}O{sub 3} thin film multiferroics (BTCO) sputter deposited on (100) SrTiO{sub 3} (where x = 0.005, 0.01, 0.02, and 0.03). As-deposited thin films are vacuum annealed by electron beam rapid thermal annealing technique. 50 nm thick BTCO with “x = 0.01” shows RT ferromagnetic and ferroelectric response with saturation magnetic moment of 1120 emu/cc and polarization of 14.7 microcoulomb/cm{sup 2}. Piezoresponse/magnetic force microscope images shows RT magnetoelectric coupling in BTCO with “x = 0.01,” which is confirmed using magnetocapacitance measurement where an increase in capacitance from 17.5 pF to 18.4 pF is observed with an applied magnetic field.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Magnetoelectric Composites: Applications, Coupling Mechanisms, and Future Directions

Multiferroic (MF)-magnetoelectric (ME) composites, which integrate magnetic and ferroelectric materials, exhibit a higher operational temperature (above room temperature) and superior (several orders of magnitude) ME coupling when compared to single-phase multiferroic materials. Room temperature control and the switching of magnetic properties via an electric field and electrical properties by a magnetic field has motivated research towards the goal of realizing ultralow power and multifunctional nano (micro) electronic devices. Here, some of the leading applications for magnetoelectric composites are reviewed, and the mechanisms and nature of ME coupling in artificial composite systems are discussed. Ways to enhance the ME coupling and other physical properties are also demonstrated. Finally, emphasis is given to the important open questions and future directions in this field, where new breakthroughs could have a significant impact in transforming scientific discoveries to practical device applications, which can be well-controlled both magnetically and electrically.

36 MATERIALS SCIENCE↗

Determination of the magnetoelectric coupling coefficient from temperature dependences of the dielectric permittivity for multiferroic ceramics Bi{sub 5}Ti{sub 3}FeO{sub 15}

In the multiferroic materials, the dielectric and magnetic properties are closely correlated through the coupling interaction between the ferroelectric and magnetic order. We attempted to determine the magnetoelectric coupling coefficient from the temperature dependences of the dielectric permittivity for multiferroic Bi{sub 5}Ti{sub 3}FeO{sub 15}. Multiferroic ceramics Bi{sub 5}Ti{sub 3}FeO{sub 15} belong to materials of the Aurivillius-type structure. Multiferroic ceramics Bi{sub 5}Ti{sub 3}FeO{sub 15} was synthesized via sintering the Bi{sub 2}O{sub 3} and Fe{sub 2}O{sub 3} mixture and TiO{sub 2} oxides. The precursor material was ground in a high-energy attritorial mill for 5 hours. This material was obtained by a solid-state reaction process at T = 1313 K. We investigated the temperature dependences of the dielectric permittivity for the different frequencies. From the dielectric measurements, we determined the temperature of phase transition of the ferroelectric-to-paraelectric type at about 1013 K. Based on dielectric measurements and theoretical considerations, the values of the magnetoelectric coupling coefficient were specified.

36 MATERIALS SCIENCE↗

Brillouin light scattering study of transverse mode coupling in confined yttrium iron garnet/barium strontium titanate multiferroic

Using the space-resolved Brillouin light scattering spectroscopy we study the transformation of dynamic magnetization patterns in a bilayer multiferroic structure. We show that in the comparison with a single yttrium iron garnet (YIG) film magnetization distribution is transformed in the bilayer structure due to the coupling of waves propagating both in an YIG film (magnetic layer) and in a barium strontium titanate slab (ferroelectric layer). We present a simple electrodynamic model using the numerical finite element method to show the transformation of eigenmode spectrum of confined multiferroic. In particular, we demonstrate that the control over the dynamic magnetization and the transformation of spatial profiles of transverse modes in magnetic film of the bilayer structure can be performed by the tuning of the wavevectors of transverse modes. The studied confined multiferroic stripe can be utilized for fabrication of integrated dual tunable functional devices for magnonic applications.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗