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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 73 records · Page 4
All sourcesNASA NTRSDOE OSTI
NASA NTRS1988

Grid oscillators

Loading a two-dimensional grid with active devices offers a means of combining the power of solid-state oscillators in the microwave and millimeter-wave range. The grid structure allows a large number of negative resistance devices to be combined. This approach is attractive because the active devices do not require an external locking signal, and the combining is done in free space. In addition, the loaded grid is a planar structure amenable to monolithic integration. Measurements on a 25-MESFET grid at 9.7 GHz show power-combining and frequency-locking without an external locking signal, with an ERP of 37 W. Experimental far-field patterns agree with theoretical results obtained using reciprocity.

Popovic, Zorana B.↗
NASA NTRS1987

Microwave and millimeter-wave resonant tunneling diodes

Several demonstrated resonant tunneling devices including oscillators, mixers, multiplexers, and a variable negative resistance are discussed. Techniques of the millimeter/submillimeter regime are also discussed.

Sollner, T. C. L. Gerhard↗
NASA NTRS1989

Auroral pulsations from ionospheric winds

The possibility that auroral pulsations are due to oscillatory electrical circuits in the ionosphere that are driven by the negative resistance of jet stream winds is examined. For the condenser plates, the highly conducting surfaces above the edges of the jet stream are postulated. The dielectric constant of the plasma between the plates is quite large. The current that is driven perpendicular to and by the jet stream closes along the plates and through Pedersen currents in the F region above the stream. This closed loop gives the inductance and resistance for the circuit. Periods of oscillation for this circuit appear to be in the range of Pc 1 to Pc 3. In accord with observations, this circuit appears to be able to limit the brightness of pulsations.

Nakada, M. P.↗
NASA NTRS1992

A study of subterahertz HEMT monolithic oscillators

A detailed study of monolithic InP-based HEMT oscillators for subterahertz operation is presented. InAlAs/InGaAs HEMT's have been optimized for high frequency operation and showed very high maximum oscillation frequencies (f(sub max)) of 310 GHz using offset self-aligned gamma-gate technology. Power characteristics of HEMT oscillators are reported. An oscillation power of more than 10 mW was evaluated by large-signal analysis at 320 GHz using HEMT's with f(sub max) = 450 GHz, V(sub br) = 10 V and a gate width (W(sub g)) of 8 x 22.5 microns. Oscillator topology studies showed that complex feedback schemes such as dual and active feedback enhance the negative resistance. Push-push oscillator designs based on harmonic signal generation can finally be used to overcome the frequency barrier imposed by f(sub max).

Kwon, Youngwoo↗
DOE OSTI2022

High temperature corrosion sensor

A high temperature corrosion sensor is provided having (i) a housing having an external wall and an internal wall, the internal wall of the housing forming a chamber of the housing, (ii) a stainless steel tube inserted into the chamber, (iii) a ceramic tube wherein at least a portion of the ceramic tube is inserted into the stainless steel tube, (iv) an airflow tube that extends through the chamber, and (v) a sensor probe having a first working electrode, a second working electrode, a reference electrode, a positive electrical resistance, a negative electrical resistance, and a thermocouple, wherein at least a portion of each are encapsulated into a ceramic casting that is located at one end of the housing. Methods of measuring corrosion within a power plant environment are provided.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2024

Harnessing Quantum Capacitance in 2D Material/Molecular Layer Junctions for Novel Electronic Device Functionality

Two-dimensional (2D) materials promise advances in electronic devices beyond Moore’s scaling law through extended functionality, such as non-monotonic dependence of device parameters on input parameters. However, the robustness and performance of effects like negative differential resistance (NDR) and anti-ambipolar behavior have been limited in scale and robustness by relying on atomic defects and complex heterojunctions. In this paper, we introduce a novel device concept that utilizes the quantum capacitance of junctions between 2D materials and molecular layers. We realized a variable capacitance 2D molecular junction (vc2Dmj) diode through the scalable integration of graphene and single layers of stearic acid. The vc2Dmj exhibits NDR with a substantial peak-to-valley ratio even at room temperature and an active negative resistance region. The origin of this unique behavior was identified through thermoelectric measurements and ab initio calculations to be a hybridization effect between graphene and the molecular layer. The enhancement of device parameters through morphology optimization highlights the potential of our approach toward new functionalities that advance the landscape of future electronics.

2D materials↗
DOE OSTI2022

Structure-guided functional studies of plasmid-encoded dihydrofolate reductases reveal a common mechanism of trimethoprim resistance in Gram-negative pathogens

Two plasmid-encoded dihydrofolate reductase (DHFR) isoforms, DfrA1 and DfrA5, that give rise to high levels of resistance in Gram-negative bacteria were structurally and biochemically characterized to reveal the mechanism of TMP resistance and to support phylogenic groupings for drug development against antibiotic resistant pathogens. Preliminary screening of novel antifolates revealed related chemotypes that showed high levels of inhibitory potency against Escherichia coli chromosomal DHFR (EcDHFR), DfrA1, and DfrA5. Kinetics and biophysical analysis, coupled with crystal structures of trimethoprim bound to EcDHFR, DfrA1 and DfrA5, and two propargyl-linked antifolates (PLA) complexed with EcDHFR, DfrA1 and DfrA5, were determined to define structural features of the substrate binding pocket and guide synthesis of pan-DHFR inhibitors.

59 BASIC BIOLOGICAL SCIENCES↗
NASA NTRS2006

Supine Treadmill Exercise in Lower Body Negative Pressure Combined with Resistive Exercise Counteracts Bone Loss, Reduced Aerobic Upright Exercise Capacity and Reduced Muscle Strength

Long-term exposure to weightlessness leads to cardiovascular and musculoskeletal deconditioning. In this report, the effectiveness of combined supine treadmill exercise in a lower body negative pressure chamber (LBNPex) and flywheel resistive exercise (Rex) countermeasures was determined to prevent bone loss, reduced aerobic upright exercise capacity and reduced muscle strength. We hypothesized that exercise subjects would show less decrease in bone mineral density (BMD), peak oxygen consumption (VO2pk) and knee extensor strength (KES) than control subjects. Sixteen healthy female subjects participated in a 60-d 6(sup 0) head-down tilt bed rest (BR) study after providing written informed consent. Subjects were assigned to one of two groups: a non-exercising control group CON or an exercise group EX performing LBNPex 2-4 d/wk and Rex every 3rd-d. VO2pk was measured with a maximal, graded, upright treadmill test performed pre-BR and on 3-d after BR. BMD was assessed before and 3-d after BR. Isokinetic KES was measured before and 5-d after BR. Two-way repeated measures ANOVA were performed. Statistical significance was set at p less than 0.05. CON experienced a significant decrease in BMD in the trochanter (PRE: 0.670 plus or minus 0.045; POST: 0.646 plus or minus 0.352 g (raised dot) per square centimeter) and in the whole hip (PRE=0.894 plus or minus 0.059; POST: 0.858 plus or minus 0.057 g (raised dot) per square centimeter). BMD also decreased significantly in EX in the trochanter (PRE: 0.753 plus or minus 0.0617; POST: 0.741 plus or minus 0.061 g (raised dot) per square centimeter) and whole hip (PRE: 0.954 plus or minus 0.067; POST: 0.935 plus or minus 0.069 g (raised dot) per square centimeter). BMD losses were significantly less in EX than in CON subjects. VO2pk was significantly decreased in the CON after BR (PRE: 38.0 plus or minus 4.8; POST: 29.9 plus or minus 4.2 ml (raised dot) per kilogram per minute), but not in the EX (PRE: 39.0 plus or minus 2.0; POST: 37.8 plus or minus 1.9 ml (raised dot) per kilogram per minute). KES was significantly reduced by 30% in Con (PRE: 113 plus or minus 12; POST: 78 plus or minus 8 N-m), but was not different in EX (PRE: 126 plus or minus 25; POST: 115 plus or minus 25 N-m). The combination LBNPex and Rex during 60-d BR protects against cardiovascular and musculoskeletal deconditioning and may be efficacious countermeasure for prolonged space flight.

Meuche, Sabine↗
NASA NTRS1973

Power supply for carbon dioxide lasers

An improved ac power supply for a CO2 laser which eliminates the need for ballast resistors to excite a stable discharge is disclosed. The method involves the connection of an inductance in front of the rectifier. This procedure provides a nondissapative positive resistance effect for cancelling the negative differential resistance exhibited by the tube at frequencies below 2 KHz. Such an inductance setup also increases the efficiency of the system.

Schiffner, G.↗
NASA NTRS1992

Anomalous capacitance of quantum well double-barrier diodes

The S-parameters of several different quantum well double barrier diodes have been measured. A technique has been developed for measuring whisker contacted diodes with an HP 8510B automatic network analyzer. Special coaxial mounts using K-connectors were designed to enable measurements up to 20 GHz. The voltage-dependent conductance and capacitance were derived from the measured reflection coefficient of each device. The C/V characteristics were observed to exhibit an anomalous increase at voltages corresponding to the negative differential resistance region (NDR). These are the first reported S-parameter measurements in the negative differential resistance region of quantum well double barrier diodes. A theory is presented that explains, in part, the observed results.

Boric, Olga↗
DOE OSTI2025

Structural basis of undecaprenyl phosphate glycosylation leading to polymyxin resistance in Gram-negative bacteria

In Gram-negative bacteria, the enzymatic modification of Lipid A with aminoarabinose (L-Ara4N) leads to resistance against polymyxin antibiotics and cationic antimicrobial peptides. ArnC, an integral membrane glycosyltransferase, attaches a formylated form of aminoarabinose to the lipid undecaprenyl phosphate, enabling its association with the bacterial inner membrane. Here, we present cryo-electron microscopy structures of ArnC from S. enterica in apo and nucleotide-bound conformations. These structures reveal a conformational transition that takes place upon binding of the partial donor substrate. Using coarse-grained and atomistic simulations, we provide insights into substrate coordination before and during catalysis, and we propose a catalytic mechanism that may operate on all similar metal-dependent polyprenyl phosphate glycosyltransferases. The reported structures provide a new target for drug design aiming to combat polymyxin resistance.

Ashraf, Khuram U. [Rutgers University, Newark, NJ ↗
DOE OSTI2024

Republished: Colossal density-driven resistance response in the negative charge transfer insulator MnS 2

The Mn chalcogenides show a remarkable variation in structural and physical properties with density. In MnS 2 we observe a pronounced difference with the effects of varying hydrostaticity with pressure inducing a structural transition at 300 K. Within the pyrite phase, a colossal electrical resistance drop of 10 8 Ohms is observed by 12 GPa of nonhydrostatic compression at 300 K. DFT simulations reveal the metallization to be unexpectedly driven by previously unoccupied S$^{2-}_2$ σ$^*_{3p}$ antibonding states crossing the Fermi level. This is a seldom seen variant of the charge transfer insulator to metal transition for negative charge transfer insulators which have anions with an unsaturated valence. Finally, by 36 GPa of nonhydrostatic compression, the single presence of the low-spin insulating arsenopyrite (P2 1 /c) phase is confirmed, and the bulk metallicity is broken with the system returning to an insulative electronic state.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Material‐Driven Neuronal Oscillators and Filters via Active Reactance in CC‐NDR and VC‐NDR Electro‐Thermal Memristors

The continued scaling of artificial intelligence and telecommunications hardware is increasingly constrained by the power, bandwidth, and area limitations of transistor-based circuits. Neuromorphic processor units, analog oscillators, and active inductors and capacitors rely on complex multi-transistor architectures restricting material choices and incurring energy and footprint overhead. Here, we show that active reactance in electro-thermal memristors provides an intrinsic, material driven route to neuronal oscillator dynamics and signal processing. Using a physics-based compact modeling framework, we bridge negative differential resistance (NDR) and bias-tunable reactance, which underlies spiking dynamics in electro-thermal memristors. Memristors with negative temperature coefficients of resistance (TCR) manifest current-controlled (CC-) NDR and act as active inductors, thus generating spiking above a critical circuit capacitance; whereas memristors with positive TCR manifest voltage-controlled (VC-) NDR and active capacitance, leading to spiking above a critical inductance. By creating a compact model for La 0.7 Ca 0.3 MnO 3 as a representative VC-NDR material and comparing it with LaCoO 3 manifesting CC-NDR, we explain the physical origins of their distinct current-voltage characteristics, reactive phase shifts and consequent spiking behaviors. Finally, we demonstrate tunable filtering enabled by the active reactance of electro-thermal memristors, establishing them as a compact hardware platform for neuronal oscillator functionality and integrated filtering beyond conventional CMOS.

active reactance↗
NASA NTRS1988

Resonant-tunneling oscillators and multipliers for submillimeter receivers

Resonant tunneling through double-barrier heterostructures has attracted increasing interest recently, largely because of the fast charge transport it provides. In addition, the negative differential resistance regions that exist in the current-voltage (I-V) curve (peak-to-valley ratios of 3.5:1 at room temperature, and nearly 10:1 at 77 K, were measured) suggest that high-speed devices based on the character of the I-V curve should be possible. For example, the negative differential resistance region is capable of providing the gain necessary for high-frequency oscillations. In the laboratory attempts were made to increase the frequency and power of these oscillators and to demonstrate several different high-frequency devices.

Sollner, T. C. L. Gerhard↗
DOE OSTI2020

CO 2 –Based Dual–Tone Resists for Electron Beam Lithography

The increasing global environmental and energy crisis has urgently motivated the advancement of sustainable materials. Significant effort has been focused on developing new materials to replace the fossil-based resists in the semiconductor industry based on greener sources such as ice, dry ice, small organic molecules, and proteins. Such resist materials, however, have yet to meet the stringent requirements of high sensitivity, high resolution, reliable repeatability, and good compatibility with the current protocols. To this end, CO 2 -based polycarbonates (CO 2 -PCs) obtained from the copolymerization of CO 2 and epoxides are demonstrated as sustainable dual-tone (positive & negative tone) resists for electron beam lithography. By adjusting the chemical structure, developing agent, and molecular weight, the CO 2 -PCs present high sensitivities to electron beam (1.3/120 μC cm -2 ), narrow critical dimensions (29/58 nm), and moderate line edge roughness (4.6/26.7 nm) for negative and positive resists, respectively. Here, a deep understanding of the exposure mechanism of CO 2 -PC resists is provided on the basis of the Fourier transform infrared, Raman, and electron ionization mass spectroscopy. 2D photonic crystal devices are fabricated using the negative and positive CO 2 -PC resists, respectively, and both devices show distinct colors derived from their well-defined nanostructures, indicating the great practical potential of CO 2 -derived electron beam resists.

nanofabrication↗
DOE OSTI2023

Two-well injector direct-phonon terahertz quantum cascade lasers

We present an experimental study on a terahertz quantum cascade laser (THz QCL) design that combines both two-well injector and direct-phonon scattering schemes, i.e., a so-called two-well injector direct-phonon design. As a result of the two-well injector direct-phonon scheme presented here, the lasers benefit from both a direct phonon scattering scheme for the lower laser level depopulation and a setback for the doping profile that reduces the overlap of the doped region with active laser states. Additionally, our design also has efficient isolation of the active laser levels from excited and continuum states as indicated by negative differential resistance behavior all the way up to room temperature. This scheme serves as a good platform for improving the temperature performance of THz QCLs as indicated by the encouraging temperature performance results of the device with a relatively high doping level of 7.56 × 10 10 cm −2 and T max ∼ 167 K. With the right optimization of the molecular beam epitaxy growth and interface quality, the injection coupling strength, and the doping density and its profile, the device could potentially reach higher temperatures than the latest records reached for the maximum operating temperature (T max ) of THz QCLs.

47 OTHER INSTRUMENTATION↗
DOE OSTI2025

InAs sidewall tunnel diodes enabled by surface states

Negative differential resistance (NDR), where the device current decreases with increasing bias voltage, is a representative phenomenon where quantum mechanics induces counterintuitive physical behavior and offers promising applications such as high-frequency oscillators, amplifiers, and multilevel logic circuits. While the NDR behavior has been extensively studied in various materials and devices, the role of surface properties in NDR, particularly in InAs-based diodes, remains underexplored. In this work, we report the observation of NDR in vertically structured InAs p + n diodes that exhibit a peak-valley current ratio of ∼6, which is suitably high for applications. Circumference-normalized current–voltage characterization revealed that the NDR originates from band-to-band tunneling between the valence band of p + -InAs and the conduction band of an n + -InAs surface, where the n + surface is due to surface states on otherwise n − -InAs. In addition, by comparing devices with various surface passivation methods (without intentional passivation, benzocyclobutene polymer, and silicon nitride), we found that the surface termination significantly affects the NDR characteristics. We present an equivalent circuit model to explain the observed device behavior. These findings offer insights into surface-enabled NDR phenomena and present new knobs for engineering NDR devices.

Circuit theorems↗