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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 73 records · Page 4

The Effect of Particle Density on Aeolian Transport

A set of experiments using a wide range of particle densities was performed in an open-circuit, terrestrial-atmospheric-pressure wind tunnel at Arizona State University. The results show that saltation flux equations derived for typical geologic material overpredict the flux of low-density particles. Walnut shells (approximately 1.1 g/cc) were used in the experiment and correspond to volcanic ash or ice. Less mass is transported by the wind in the case of low particle density because the style of transport is different. There is a direct, counter-intuitive relationship between particle density and transport height. Measurements of the vertical distribution of material show that the low-density walnut shells travel in a zone within 10 cm of the surface while high-density (approximately 4.5 g/cc) chromite particles travel as 50 cm. Furthermore, the overall saltation rate of the chromite is approximately four times greater than the walnut shells at the same freestream wind speed, even though the wind is much further above threshold for the walnut shells.

Williams, S. H.↗

Sb doping via drive-in diffusion as an alternative to in-situ doping in VTD

Group-V doping can enhance the efficiency of CdTe photovoltaic devices by increasing the open-circuit voltage (Voc), if long lifetimes can be retained and radiative voltage loss can be avoided. In this preliminary study, ex-situ Sb doping via drive-in diffusion improved grain sizes compared to Sb-free films without CdCl2 treatment. Sb doping did not reduce the carrier lifetime for uniform CdSeTe absorbers. Additionally, the CST-air surface recombination decreased with Sb. No potential fluctuations were observed by PL at this doping level. The [Sb] and carrier concentration for this study are not yet measured so the conclusions drawn are all preliminary

14 SOLAR ENERGY↗

Microstrip termination effects on dielectric resonator filters

Dielectric resonator filters coupled to microstrip lines appear to answer the requirements of high performance and small size and weight that must be satisfied for use in satellite-based radiometers. The open-circuit and short-circuit types of coupling dielectric resonators to microstrip lines were compared with respect to radiation losses at various frequencies. The filters were fabricated from 1.6 mm Duroid board. The termination impedances for the microstrip lines were measured using a calibrated HP 8510 network analyzer. The values for radiation resistance obtained experimentally for both types of coupling agreed well with the values calculated from the Lewin theory (1960). It was found that the use of short-circuit coupling results in significantly reduced radiation resistance compared to the use of open-circuit lines. Improvement increases with increased frequency.

Trew, R. J.↗

Quasi-In-Situ Analysis of Electrode Top Atomic Layers via High-Sensitivity Low-Energy Ion Scattering and Potential-Controlled Sample Transfer

Electrocatalytic reactions involve interfacial interactions between the surfaces of electrodes and reactive species at an electrolyte interface. There are presently no universal or unambiguous methods to directly assay the active top atomic layer composition that influences the reactivity of these electrodes under relevant operating conditions. Low-energy ion scattering (LEIS) spectroscopy is a surface characterization technique that yields compositional analysis of the outermost atomic layer of a material, but it must be performed in ultrahigh vacuum (UHV). Application of LEIS measurements to electrochemical materials that are removed from ambient liquid-phase environments thus leaves an open question as to whether the surface that is transferred to UHV is truly the surface that manifested during the electrochemical reaction. Toward the goal of preserving the active surface state, we developed a sample transfer workflow for LEIS enabling air-free removal and drying of an electrode from an electrochemical cell while maintaining control of the potential using an auxiliary electrode. The potential-controlled emersion method was demonstrated to give distinct potential-dependent surface compositions for a Cu−Pd alloy relative to removal after uncontrolled return to open-circuit potential. A Cu-enriched surface was found at anodic potential and a Pd-enriched surface at cathodic potential, suggesting that the approach can be used to retain representative atomic configurations during transfer. Since adsorbates will often persist from the reaction environment, conventional sample pretreatment methods for removal, including atomic O and atomic H exposure, were also contrasted. Both methods were found to differ with results from incidental low-dose depth profiling by the LEIS primary ion source, which removes adventitious species and surface atoms during the course of repeated measurements. These depth profiles were found to be sensitive to sample history and thus qualitatively informative, despite the possible changes induced by ion damage. The results exhibit (i) the need for complete control over the polarization state of the sample at all times (no excursions to open circuit during transfer) and (ii) the utility of low-dose depth profiling to capture changes in the near-surface composition.

Alloys↗

Study of the effects of impurities on the properties of silicon solar cell

The effect of defects across the back-surface-field junction on the performance of high efficiency and thin solar cells, using a developed-perimeter device model for the three-dimensional defects is investigated. Significant degradation of open-circuit voltage can occur even if there are only a few defects distributed in the bulk of the solar cell. Two features in the thickness dependences of the fill factor and efficiency in impurity-doped back-surface-field solar cells are discovered in the exact numerical solution which are associated with the high injection level effect in the base and not predicted by the low-level analytical theory. What are believed to be the most accurate recombination parameters at the Ti center to date are also given and a theory is developed which is capable of distinguishing an acceptor-like deep level from a donor-like deep level using the measured values of the thermal emission and capture cross sections.

Sah, C. T.↗

Limiting mechanisms in large-grain polycrystalline silicon Spatial homogeneity

An experiment to investigate the spatial homogeneity of large-grain polycrystalline silicon shows a number of performance-loss mechanisms. Arrays of up to 400 small (about 0.2 sq cm in area) photodiodes were fabricated on a selection of 10 cm x 10 cm polycrystalline silicon wafers. Measurements of the illuminated current-voltage (J-V) characteristics were used to generate maps of Voc, Jsc, and FF as a function of position; and dark J-V and LBIC analysis were used to determine the cause of low performance in areas with significantly degraded J-V characteristics. In addition to the presence of inclusions, which act as resistive shunts, the performance of many of the cells is limited by quasineutral recombination current, which may vary by up to an order of magnitude across a wafer. The increase is the result of either electrically-active grain boundaries or numerous subgrain boundaries within the grain bulk. In other isolated instances, the open-circuit voltage is reduced by excess space-charge recombination current that is not correlated with either grain or subgrain boundary activity.

Culik, J.↗

Toward Fullerene-Free PIN Perovskite Solar Cells

We highlight opportunities for a transformative shift in perovskite solar cell design by expanding electron transport layers (ETLs) beyond fullerenes. Fullerenes have known limitations, including constraints on open-circuit voltage, stability, and mechanical integrity. Recently, fullerene-free p-i-n cells with power conversion efficiencies exceeding 25% have been demonstrated via both naphthalene diimide-SnO x bilayers and nonfullerene acceptor-based ETLs. Despite successes, fullerenes remain the de facto ETLs for perovskites. Drawing lessons from organic photovoltaics, where it took decades to transition from fullerenes to more broadly available and efficient materials, we explore pathways to accelerate the development and adoption of fullerene-free ETLs. This requires understanding the similarities and differences between organic and perovskite solar cells, which will necessitate carefully designing fullerene replacements with both, high efficiency and also, critically, durability under operation. Here, we incorporate literature data to facilitate comparisons, and independently conduct fracture energy measurements for alternative ETL configurations to motivate their adoption.

14 SOLAR ENERGY↗

Reversible Interfacial Hydride Transfer as a Complementary Tool To Measure Molecular Hydricity

Hydride transfer is an essential elementary reaction across the chemical value chain, but there are limited methods available for quantifying thermodynamic hydricity (ΔG H- ), particularly among main group reagents. Herein, we exploit facile H 2 activation and reversible hydride transfer from a metal surface to a molecular reagent, the net hydrogen reduction reaction (HRR), to develop a potentiometric method for quantifying ΔG H- of main group reagents recalcitrant to conventional methods. HRR potentiometry is first validated with a benzimidazole-based hydride donor and then applied to uncover the impact of the reaction environment on hydricity. For a benzimidazole-based hydride donor, HRR equilibrium potentials are roughly invariant across solvents, indicating that the solvent dependence of its hydricity largely reflects the differential solvation of H - across media. For formate, HRR potentials and corresponding hydricities depend strongly on water content. Additionally, for borohydrides, HRR potentiometry reveals that effective hydricity values are strongly influenced by Lewis acid-base adduct formation with the hydride acceptor but are minimally influenced by the countercation. Together with these studies, the advantages, limitations, and practical considerations of the HRR potentiometry method are discussed, highlighting the power of this methodology as a complementary tool to measure molecular hydricity.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Electrochemical behavior of SnCl 2 and influence of Cu and Ni ions in molten LiCl−KCl−CaCl 2 eutectic

Reliable transport and thermodynamic data for multivalent ions in complex molten salts are scarce, limiting model fidelity for electrorefining and impurity control. Here, we report a comprehensive electrochemical characterization of SnCl₂ in LiCl–KCl–CaCl₂ (50.5–44.2–5.3 mol%) at 685 K, including the effects of Ni 2+ and Cu + impurities. Using cyclic voltammetry (CV), chronoamperometry (CA), and chronopotentiometry (CP), we quantified Sn 2+ and Ni 2+ diffusion with exceptional agreement across methods: Sn 2+ averaged (1.03 ± 0.10) × 10 −5 cm 2 s −1 , and Ni 2+ averaged (0.75 ± 0.19) × 10 −5 cm 2 s −1 . The tight confidence-interval overlap across CV, CA, and CP strengthens confidence in these values and is uncommon in molten chloride studies. Open-circuit-potential measurements provided standard apparent reduction potentials that closely match LiCl–KCl literature, indicating minimal shift with CaCl₂ present. The Sn 2+ /Sn couple behaves as a reversible two-electron soluble–insoluble process at 685 K; the Sn 4+ /Sn 2+ couple transitions to soluble–soluble behavior near 788 K, which may correlate with the decomposition of surface bound chlorostannates, though direct characterization remains to be established. In mixed systems, Cu+/Cu overlaps Sn 2+ /Sn, limiting Cusingle bondSn electroseparation, whereas the larger potential gap between Ni 2+ /Ni and Sn 2+ /Sn supports selective Ni removal. These internally consistent transport and thermodynamic data establish a validated basis for process modeling and optimization of Sn electrorefining and impurity management in LiCl–KCl–CaCl₂.

Berzins-Delahay↗

Electrolyte Organization Leads to Potential-Dependence in Thermochemical Catalysis of Nonpolar Reactions

Electrochemical polarization is now known to play a key role in thermochemical catalysis at solid–liquid interfaces. However, existing frameworks cannot account for why even nonpolar, nonfaradaic reactions are sensitive to interfacial polarization. In order to uncover the molecular basis of this phenomenon, we herein study the potential-dependent reaction kinetics of ethylene and trans-2-butene hydrogenation at Pt–liquid interfaces. Measurements were performed in aqueous and ortho-difluorobenzene (o-DFB) solutions, spontaneously polarizing the Pt–liquid interfaces by, respectively, varying the pH or dissolving distinct metallocene redox buffers into solution. Here, we find that at comparable mechanistic regimes, the rates of both ethylene and trans-2-butene hydrogenation are maximized near the same electrochemical potential, E. Moreover, the potential-dependence, defined as $\frac{∂ln 𝑟}{∂𝐸}$, of trans-2-butene hydrogenation is approximately 2.2× greater than that of ethylene hydrogenation across the full potential range studied. These observations are all consistent with a model in which polarization of the Pt surface away from the local potential of zero free charge (E PZFC ) induces electrostatic organization of the polar solvent and charged ions near the interface, which impedes olefin adsorption and surface reaction because these surface reactions induce electrolyte displacement. Accordingly, interfacial polarization alters the free energy landscape and thus the rate of nonpolar heterogeneous catalysis by controlling the degree of electrostatic organization of polar and charged spectators at the interface, which do not in general need to be specifically chemisorbed onto the surface but could simply be close enough to the surface to be perturbed by the olefin adsorption. These results point toward electrochemical design handles, namely, the electrolyte, catalyst potential, and local E PZFC of the catalyst, with which to tune interfacial catalysis of thermochemical organic transformations.

adsorption↗

Imaging Power Losses in CdSeTe Solar Cells

Much of the research on CdSeTe photovoltaics is focused on improving the open-circuit voltage (V oc ) of the solar cell. But solar cells operate at the maximum power point (MPP) rather than at V oc . The recombination processes at MPP may be different than those at V oc , and increasing the power output at MPP is the key to advancing efficiency. Here, we introduce a camera-based PL imaging system that enables power loss analysis under operating conditions and across cm-sized areas covering multiple cells. The instrument is demonstrated with CdSeTe devices having efficiencies greater than 19%. An implied current density versus implied voltage (iJV) curve can be produced at each pixel with <20 µm resolution. We find that regions with high implied open circuit voltage are often those with low implied fill factor, showing that voltage loss analysis at open circuit is not sufficient to understand power losses under operating conditions. Measurement of JV curves as a function of irradiance can also be performed in the system, which allows series resistance-free pseudo JV (pJV) curves to be produced. Comparison of pJV to measured JV and iJV curves allows further analysis of the operational losses, pointing the way to higher efficiency.

14 SOLAR ENERGY↗

Scintillator based nuclear photovoltaic batteries for power generation at microwatts level

A nuclear photovoltaic battery uses scintillator to convert radiation into visible light, which is then collected by a photovoltaic (PV) cell to generate electricity. If the radiation is gamma-rays emitted from external sources, the battery may also be referred as gammavoltaic battery. In this study, a polycrystalline CdTe solar cell was optically coupled with a 2.0 cm × 2.0 cm × 1.0 cm Gadolinium Aluminum Gallium Garnet (GAGG) scintillator, and the resulting device was tested using intense gamma radiation fields from a Cs-137 (1.5 kRad/h) and a Co-60 (10 kRad/h) irradiator. Measurements with Cs-137 provided a maximum power output (P max ) of ~288 nW, with a short-circuit current density (J sc ) of ~1.22 μA/cm 2 and an open-circuit voltage (V oc ) of ~0.34 V. In contrast, Co-60 irradiator gave a P max of 1.5 μW, with a J sc of ~4.73 μA/cm 2 and a V oc of ~0.38 V. The CdTe was also paired with a Lutetium-Yttrium Oxyorthosilicate (LYSO) crystal and tested with the Cs-137 source. The experiment presents a scalable option to reach to higher power outputs by harvesting gamma radiation fields in many cases where high radiation field demands heavy shielding and is often regarded as unwanted waste.

25 ENERGY STORAGE↗

Parametric performance characteristics and treatment of temperature coefficients of silicon solar cells for space application

The electrical performance characteristics of 2 and 10 ohms-cm N/P-type silicon solar cells were measured at simulated solar intensities of 5, 50, 100, 140, 250, 400, 550, 700, and 850 mW/sq cm. At each intensity, the temperature was varied in increments of 20 deg between extremes of +160 and -160 C. Short-circuit current, open-circuit voltage, and maximum power are presented in graphical format. Also described are three methods for predicting solar cell electrical performance as a function of temperature and intensity. Two of the methods are suitable for use at extreme temperature-intensity conditions. These methods were used sucessfully to predict the performance of the transducer on board the Mariner Mars 1971 spacecraft.

Patterson, R. E.↗

Mechanisms of photon-induced changes in silicon solar cell parameters

Reversible changes in solar cell performance were induced by AM1 illumination and evaluated by measuring short-circuit current, weak light spectral response, and minority carrier diffusion length. In n(+)p cells the change manifests itself as a reduced short-circuit current, a loss of the red response, and a reduction in minority carrier diffusion length. In p(+)n cells there are two-photon induced effects: (1) enhancement of the blue spectral response, presumably occurring in the p(+) layer and (2) degradation in open-circuit voltage at low light levels due to increased leakage occurring only after the junction edge is exposed to bright light. Most of these photon effects are attributed to defects in the silicon.

Cheng, L. J.↗

Nickel-doped silicon for solar cells

Large grain boundaries in polycrystals act as gettering centers for nickel precipitates, improving cell performance. Effects are described in report. Data on open-circuit voltage, short-circuit current, maximum power, and conversion efficiency for illuminated cells are compared with values for undoped cells. Dark forward current versus voltage is also measured for cell types.

Salama, A. M.↗

Photovoltaic properties of ferroelectric BaTiO3 thin films RF sputter deposited on silicon

Ferroelectric thin films of BaTiO3 have been successfully deposited on n-type silicon substrates at temperatures above 500 C by RF sputtering in an O2/Ar atmosphere. Analysis by X-ray diffraction patterns show that films deposited at room temperature are amorphous. At temperatures above 500 C, crystalline BaTiO3 films with a tetragonal structure are obtained. The polarization-electric field (P-E) hysteresis loops and a broad peak in the dielectric constant versus temperature curve at Curie point indicate that the RF sputtered BaTiO3 films are ferroelectric. An anomalous photovoltaic effect is observed in these thin films which is related to the remanent polarization of the material. The results on open-circuit and short-circuit measurements provide an important basis for a better understanding of the role of photovoltaic field, photovoltaic current, and the pyroelectric properties in photoferroelectric domain switching.

Dharmadhikari, V. S.↗

Surface and allied studies in silicon solar cells

Measuring small-signal admittance versus frequency and forward bias voltage together with a new transient measurement apparently provides the most reliable and flexible method available for determining back surface recombination velocity and low-injection lifetime of the quasineutral base region of silicon solar cells. The new transient measurement reported here is called short-circuit-current decay (SCCD). In this method, forward voltage equal to about the open-circuit or the maximum power voltage establishes excess holes and electrons in the junction transition region and in the quasineutral regions. The sudden application of a short circuit causes an exiting of the excess holes and electrons in the transition region within about ten picoseconds. From observing the slope and intercept of the subsequent current decay, the base lifetime and surface recombination velocity can be determined. The admittance measurement previously mentioned then enters to increase accuracy particularly for devices for which the diffusion length exceeds the base thickness.

Lindholm, F. A.↗

Effect of low-energy hydrogen ion implantation on dendritic web silicon solar cells

The effect of a low-energy (0.4 keV), short-time (2-min), heavy-dose (10 to the 18th/sq cm) hydrogen ion implant on dendritic web silicon solar cells and material was investigated. Such an implant was observed to improve the cell open-circuit voltage and short-circuit current appreciably for a number of cells. In spite of the low implant energy, measurements of internal quantum efficiency indicate that it is the base of the cell, rather than the emitter, which benefits from the hydrogen implant. This is supported by the observation that the measured minority-carrier diffusion length in the base did not change when the emitter was removed. In some cases, a threefold increase of the base diffusion length was observed after implantation. The effects of the hydrogen implantation were not changed by a thermal stress test at 250 C for 111 h in nitrogen. It is speculated that hydrogen enters the bulk by traveling along dislocations, as proposed recently for edge-defined film-fed growth silicon ribbon.

Rohatgi, A.↗