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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 73 records · Page 4
All sourcesNASA NTRSDOE OSTI
NASA NTRS1997

New Low Thermal Conductivity Materials for Thermoelectric Applications

A low lattice themal conductivity is one of the conditions required to achieve high thermoelectric figures of merit. Several low themal conductivity materials were identified and developed over the past few years at JPL, including filled skutterudites and Zn (sub 4) Sb (sub 3) - based materials.

Thermal Conductivity phonon scattering themoelectr↗
NASA NTRS2015

Analysis of Advanced Thermoelectric Materials and Their Functional Limits

The world's demand for energy is increasing dramatically, but the best energy conversion systems operate at approximately 30% efficiency. One way to decrease energy loss is in the recovery of waste heat using thermoelectric (TE) generators. A TE generator is device that generates electricity by exploiting heat flow across a thermal gradient. The efficiency of a TE material for power generation and cooling is determined by the dimensionless Figure of Merit (ZT): ZT = S(exp. 2)sigmaT/κ: where S is the Seebeck coefficient, sigma is the electrical conductivity, T is the absolute temperature, and κ is the thermal conductivity. The parameters are not physically independent, but intrinsically coupled since they are a function of the transport properties of electrons. Traditional research on TE materials has focused on synthesizing bulk semiconductor-type materials that have low thermal conductivity and high electrical conductivity affording ZT values of 1. The optimization of the σ/κ ratio is difficult to achieve using current material formats, as these material constants are complementary. Recent areas of research are focusing on using nanostructural artifacts that introduce specific dislocations and boundary conditions that scatter the phonons. This disrupts the physical link between thermal (phonon) and electrical (electron) transport. The result is that κ is decreased without decreasing σ. These material formats give ZT values of up to 2 which represent approximately 18% energy gain from waste heat recovery. The next challenge in developing the next generation of TE materials with superior performance is to tailor the interconnected thermoelectric physical parameters of the material system. In order to approach this problem, the fundamental physics of each parameter S, sigma, and κ need to be physically understood in their context of electron/phonon interaction for the construction of new high ZT thermoelectric devices. Is it possible to overcome the physical limit imposed by of the effect of phonon lattice oscillation and energetic electrons towards thermal conductivity? Is the Seebeck coefficient, based on the difference in voltage over temperature gradient ( deltaV/deltaT), an intrinsic parameter of each material? All these parameters were manipulated using nano-bridge and twin-lattice structural concepts at the NASA Langley Research Center. This talk will review the current trend of TE research to optimize the ZT and discuss about new approaches on increasing ZT within functional limits of each parameter.

Kim, Hyun Jung↗
NASA NTRS1987

Temperature dependence (4K to 300K) of the electrical resistivity of methane grown carbon fibers

Experimental measurements of the electrical resistivity vs temperature of methane vapor grown carbon fibers are presented. The fibers are heat treated from 1100 C (as-grown) to 3000 C. Data are fit to a standard two band model, which yields values for boundary scattering limited electron mobility, in-plane mean free path, energy band overlap, and total carrier density. The data are also fit to an ellipsoidal band model, where data fits yield effective masses, band overlap, Fermi velocity, phonon contributions to scattering, and ionized impurity scattering rates.

Woollam, John A.↗
NASA NTRS1987

Effect of the microstructure on the thermoelectric properties of polycrystalline lanthanum chalcogenides

Small amounts of second phase materials can have important effects on the thermoelectric properties of polycrystalline gamma-La(3-x)X4 (X-S, Te; X in the range of 0 to 1/3). Microscopic examination by SEM of hot pressed La(3-x)Te4 samples has revealed from 1-5 vol. pct of La2O2Te, an amount which is not detected by X-ray powder diffraction measurements. This amount of La2O2Te resulting from oxygen contamination can reduce the concentration of electrons by as much as 10 to 75 percent below the electron concentration calculated for single phase La(3-x)Te4 in the composition range of greatest interest. Small amounts of second phase materials can also lower the lattice thermal conductivity by scattering low frequency phonons. These results indicate that microstructural effects should be considered when electrical and thermal properties of polycrystalline materials are analyzed.

Lockwood, A.↗
NASA NTRSDate not supplied

Globally Optimal Band Structure for Thermoelectrics in Realistic Systems

One of the ultimate questions in the field of thermoelectrics is the optimal band structure for the figure of merit. The observation made here is that a linear band dispersion, of any dimension, under acoustic-phonon-deformation-potential scattering comprises the theoretical regimen for delivering boxcar transport distribution, which has been mathematically proven to deliver optimum figure of merit. This is guaranteed by the interplay of the energy-dependencies of groupvelocity and density of states of linear dispersion as well as the energy-behavior of deformation-potential scattering. Then linear dispersion, capped with optimum bandwidth and combined with provisions of Park et al, npj Comput. Mater. 7, 43 2021, is the globally optimal band structure for thermoelectricity.

Junsoo Park↗
NASA NTRS1988

Ballistic transport in II-VI semiconductor compounds and alloys

Realistic band structures are used in calculating the group velocity and scattering rates for electrons with injection energies up to 1 eV in ZnTe, CdTe, and the low-effective-mass alloy Hg(0.7)Cd(0.3)Te. Scattering from longitudinal optical phonons, ionized impurities, and alloy disorder have been included in the full band-structure calculation, which automatically includes both intra- and intervalley scattering. Of the II-VI materials considered, at 77 K HgCdTe is superior for low injection energies (up to 0.25 eV) while CdTe is superior at higher injection energies (1 eV) at room temperature. The attainable mean free paths (equal to or greater than 1000 A) and group velocities (equal to or greater than 10 to the 8th cm/s) for both systems are comparable to values found in III-V systems.

Berding, M. A.↗
NASA NTRS1995

Thermal Line Shift and Broadening of Ho(3+) in Y3AI5O12 and Lu3AIO12

The interaction between the active ion and the host lattice manifests itself in two distinct ways: the static interaction with the crystal field that causes the splitting of the free ion energy levels and the active interaction through the surrounding phonon system that produces temperature dependent characteristics in the optical spectrum of the ion (e.g. line broadening and line shift). The strength of the splitting depends heavily on the electronic configuration of the atom. The model give by McCumber and Sturge describes the thermal effects on line width and position above 77 K with Raman scattering of Debye model phonons. These processes predict a Lorentzian line shape. However, below 77 K the principal contributions are from crystal inhomogeneities that result in a Gaussian line shape. We have investigated the experimental Stark levels as well as the thermal effects on the line width and the position of trivalent holmium ions in both yttrium aluminum garnet, Y3Al5O12 (YAG) and lutetium aluminum garnet, Lu3Al5O12 (LuAG) crystals. We have compared the Stark levels of the (5)I(6) state, and the thermal line shift and broadening of an isolated transition (Z2 to X13) between the (5)I(8) and (5)I(6) stark levels in these crystals. This transition occurs in the near infrared region at approximately 1117 nm.

Snoke, Elizabeth R.↗
NASA NTRS1981

Stochastic treatment of electron multiplication without scattering in dielectrics

By treating the emission of optical phonons as a Markov process, a simple analytic method is developed for calculating the electronic ionization rate per unit length for dielectrics. The effects of scattering from acoustic and optical phonons are neglected. The treatment obtains universal functions in recursive form, the theory depending on only two dimensionless energy ratios. A comparison of the present work with other numerical approaches indicates that the effect of scattering becomes important only when the electric potential energy drop in a mean free path for optical-phonon emission is less than about 25% of the ionization potential. A comparison with Monte Carlo results is also given for Teflon.

Lin, D. L.↗
NASA NTRS1980

Heterodyne signal-to-noise ratios in acoustic mode scattering experiments

The relation between the signal to noise ratio (SNR) obtained in heterodyne detection of radiation scattered from acoustic modes in crystalline solids and the scattered spectral density function is studied. It is shown that in addition to the information provided by the measured frequency shifts and line widths, measurement of the SNR provides a determination of the absolute elasto-optical (Pockel's) constants. Examples are given for cubic crystals, and acceptable SNR values are obtained for scattering from thermally excited phonons at 10.6 microns, with no external perturbation of the sample necessary. The results indicate the special advantages of the method for the study of semiconductors.

Cochran, W. R.↗
NASA NTRS1987

HgCdTe versus HgZnTe - Electronic properties and vacancy formation energies

The alloy variation of the band gap and the electron and hole effective masses have been calculated for HgCdTe and HgZnTe. Band-gap bowing is larger in HgZnTe than in HgCdTe because of the larger bond length mismatch of HgTe and ZnTe; electron and hole effective masses are found to be comparable for the two alloys for a given band gap. The electron mobility was calculated in both alloys with contributions from phonon, impurity, and alloy scattering. Contributions to the E1 line width due to alloy and impurity scattering in Hg(0.7)Cd(03)Te have been calculated. Results of calculations of the vacancy formation energies in HgTe, ZnTe, and CdTe are discussed.

Berding, M. A.↗
NASA NTRS1993

Evaluation of the Improvement in the Figure of Merit of Bi_2Te_3-Based Alloys with Addition of Ultrafine Scattering Centers

The addition of ultrafine scattering centers into Bi_2Te_3-based materials and their impact on the thermal and electrical transport properties in a 200-500 K temperature range are discussed. Based on previous theoretical efforts, the resulting improvements in the figure of merit of these heavily doped thermoelectric semiconductors were calculated as a function of composition, temperature, doping level, particulate size and concentration. Determination of the lattice thermal conductivity of the various alloys was conducted by considering phonon-phonon, carrier-phonon, point defect and inert scattering center scattering mechanisms. Degradation of the electrical properties due to the increase scattering rate was also taken into account. Practical application of these results is considered.

Fleurial, Jean-Pierre↗
NASA NTRS1988

High temperature thermal conductivity measurements on lanthanum sulfides using the flash method

In the past, high temperature specific heat and hence thermal conductivity measurements, using the flash method have not been very accurate. This is due to the difficulty of exactly determining the amount of heat deposited on the front face of a sample during each flash. This problem has now been solved by sputtering a thin layer of graphite on the standard reference and test samples. Data taken shows that the amount of heat deposited can now be determined to within about 2 percent resulting in more accurate thermal conductivity data. The results of measurements on several lanthanum sulfides with stoichiometries between LaS(1.35) and LaS(1.48) are reported and show a minimum in the lattice thermal conductivity at a composition of around LaS(1.41). This is believed to be due to the scattering of low-frequency phonons by large defects, i.e., second phase material (beta-phase) and pores.

Vandersande, J. W.↗