Search NASA⌕ Search

SEARCH · Search NASA

Results for “planar structures”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 73 records · Page 4

Resonant two-photon photoelectron imaging and adiabatic detachment processes from bound vibrational levels of dipole-bound states

Anions cannot have Rydberg states, but anions with polar neutral cores can support highly diffuse dipole-bound states (DBSs) as a class of interesting electronically excited states below the electron detachment threshold. The binding energies of DBSs are extremely small, ranging from a few to few hundred wavenumbers and generally cannot support bound vibrational levels below the detachment threshold. Thus, vibrational excitations in the DBS are usually above the electron detachment threshold and they have been used to conduct resonant photoelectron spectroscopy, which is dominated by state-specific autodetachment. Here we report an investigation of a cryogenically-cooled complex anion, the enantiopure (R)-(–)-1-(9-anthryl)-2,2,2-trifluoroethanolate (R-TFAE–). The neutral R-TFAE radical is relatively complex and highly polar with a non-planar structure (C 1 symmetry). Photodetachment spectroscopy reveals a DBS 209 cm–1 below the detachment threshold of R-TFAE– and seven bound and eight above-threshold vibrational levels of the DBS. Resonant two-photon detachment (R2PD) via the bound vibrational levels of the DBS exhibits strictly adiabatic photodetachment behaviors by the second photon, in which the vibrational energies in the DBS are carried to the neutral final states, because of the parallel potential energy surfaces of the DBS and the corresponding neutral ground electronic state. Relaxation processes from the bound DBS levels to the ground and low-lying electronically excited states of R-TFAE– are also observed in the R2PD photoelectron spectra. Finally, the combination of photodetachment and resonant photoelectron spectroscopy yields frequencies for eight vibrational modes of the R-TFAE radical.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Observation of laser ablation of silicon as a function of pulse length at constant fluence via time-resolved x-ray spectroscopy

We investigate the ablation of silicon as a function of laser pulse length at a constant fluence using time-resolved x-ray spectroscopy data obtained from OMEGA EP experiments at the University of Rochester's Laboratory for Laser Energetics. Our targets consisted of three-layer planar structures composed of Si (50 μm), Cu (25 μm), and SiO 2 (500 μm) layers. The Si layer was irradiated by a 351-nm laser with varying pulse widths of 250 ps, 500 ps, 1 ns, and 10 ns while maintaining a constant fluence of ~27.9 kJ/cm 2 . Electron temperatures and densities of the ablated plasma were determined by analyzing the time-resolved x-ray spectroscopy data through a comparison of experimental measurements with synthetic results obtained from Si atomic calculations in a steady state and non-local thermodynamic equilibrium. These calculations were computed using PrismSPECT. Additionally, radiation-hydrodynamics simulations with FLASH are used to generate simulated plasma-density and plasma-temperature profiles, which are then compared with the experimental measurements. Our analyses reveal that increasing the laser pulse length at a constant fluence results in a decrease in electron temperatures and densities. Furthermore, the longer pulses with lower intensities lead to deeper ablation regions before reaching the peak ablation but lower ionization balances in the silicon layer. Furthermore, these findings emphasize the critical role of laser pulse length in plasma ablation and shock generation for laser-impulse studies.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Large-area epitaxial growth of InAs nanowires and thin films on hexagonal boron nitride by metal organic chemical vapor deposition

Large-area epitaxial growth of III–V nanowires and thin films on van der Waals substrates is key to developing flexible optoelectronic devices. In our study, large-area InAs nanowires and planar structures are grown on hexagonal boron nitride templates using metal organic chemical vapor deposition method without any catalyst or pre-treatments. The effect of basic growth parameters on nanowire yield and thin film morphology is investigated. Under optimised growth conditions, a high nanowire density of 2.1 x 10 9 cm -2 is achieved. A novel growth strategy to achieve uniform InAs thin film on h-BN/SiO 2 /Si substrate is introduced. The approach involves controlling the growth process to suppress the nucleation and growth of InAs nanowires, while promoting the radial growth of nano-islands formed on the h-BN surface. A uniform polycrystalline InAs thin film is thus obtained over a large area with a dominant zinc-blende phase. The film exhibits near-band-edge emission at room temperature and a relatively high Hall mobility of 399 cm -2 /(Vs). This work suggests a promising path for the direct growth of large-area, low-temperature III–V thin films on van der Waals substrates.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

An Unbalanced Sinuous Antenna for Near-Surface Polarimetric Ground-Penetrating Radar

Sinuous antennas are capable of producing ultra-wideband radiation with polarization diversity. This capability makes the sinuous antenna an attractive candidate for UWB polarimetric radar applications. Additionally, the ability of the sinuous antenna to be implemented as a planar structure makes it a good fit for close-in sensing applications such as ground-penetrating radar (GPR). In this work, each arm of a four-port sinuous antenna is operated independently to achieve a quasi-monostatic antenna system capable of polarimetry while separating transmit and receive channels—which is often desirable in GPR systems. The quasi-monostatic configuration of the sinuous antenna reduces system size as well as prevents extreme bistatic angles, which may significantly reduce sensitivity when attempting to detect near-surface targets. A prototype four-port sinuous antenna is fabricated and integrated into a GPR testbed. The polarimetric data obtained with the antenna is then used to distinguish between buried target symmetries.

47 OTHER INSTRUMENTATION↗

Effects of Intrusive Confining Units on Groundwater Flow at Pahute Mesa, Nevada National Security Site

Geological, geophysical, hydrogeological, and hydrological evidence indicates that feeder dikes to lava flows play a role as confining units in the groundwater flow system underlying the Pahute Mesa area of underground nuclear testing at the Nevada National Security Site (NNSS). Of geological significance, the Pahute Mesa testing area is largely situated within the Silent Canyon caldera, which includes both tuffs and lavas that were fed by (and are connected to) intrusive rock units such as feeder dikes prior to and during volcanic eruptions (Orkild et al., 1968; Byers et al., 1976). Groundwater modeling results presented in this report support extension of “pool-dam” and “breach scenario” concepts presented in Jackson and Fenelon (2018) and Jackson et al. (2021) to low-permeability intrusive confining units (ICUs) such as feeder dikes that are expected to dissect and ring the caldera. As laterally extensive, steeply-dipping, and sub-parallel planar structures, ICUs can be expected to further compartmentalize groundwater flow in the volcanic aquifers systems at Pahute Mesa beyond the stratigraphically-defined tuff confining units (TCUs). ICUs provide an explanation for changes in water levels before and after the Cheshire test, detonated 2/14/76 (USDOE, 2015), and the unusually high horizontal gradient southwest of Cheshire. These ICU concepts are supported by groundwater modeling results presented in this report. The evidence and groundwater modeling results indicate that the downgradient extent of radionuclide contamination in some areas of Pahute Mesa could be overestimated by ignoring the confining effects of ICUs. On the other hand, contaminant extent could be underestimated by not considering transient flow effects and/or the re-equilibrated flow field caused by breaching of an ICU by an underground nuclear test.

54 ENVIRONMENTAL SCIENCES↗

Effects of Intrusive Confining Units on Groundwater Flow at Pahute Mesa, Nevada National Security Site

Geological, geophysical, hydrogeological, and hydrological evidence indicates that feeder dikes to rhyolitic lava flows may play a role as confining units in the groundwater flow system underlying the Pahute Mesa (PM) area of underground nuclear testing at the Nevada National Security Site (NNSS) (Figure 1). Of geological significance, the PM testing area is largely situated within the Silent Canyon caldera complex (SCCC), which includes both tuffs and lavas that were fed by (and are connected to) intrusive rock units such as feeder dikes prior to and during volcanic eruptions (Orkild et al., 1968; Byers et al., 1976a). Groundwater modeling results presented in this report support extension of “pool-dam” and “breach scenario” concepts presented in Jackson and Fenelon (2018) and Jackson et al. (2021) to low-permeability intrusive confining units (ICUs) such as feeder dikes that are expected to dissect and ring silicic calderas. As laterally extensive, steeply-dipping, and sub-parallel planar structures, ICUs may further compartmentalize groundwater flow in some areas of the volcanic aquifer system at PM. ICUs may explain unusually high horizontal hydraulic gradient southwest of Cheshire. Breaching of an ICU within which the Cheshire test was emplaced may explain changes in water levels before and after the Cheshire test was detonated in the U-20n emplacement hole on 2/14/76 (USDOE, 2015b). This analysis of the effects of ICUs on groundwater flow at PM addresses a need to evaluate uncertainty in the conceptual model or structural aspects of hydrologic source term (HST) or corrective action unit (CAU) models for groundwater flow and contaminant transport (FFACO, 1996, as amended). At Cheshire and possibly other test locations at PM, downgradient extent of radionuclide contamination may be overpredicted by not including the confining effects of ICUs. On the other hand, contaminant extent may be underpredicted by not considering transient flow effects and/or the re-equilibrated flow field caused by breaching of an ICU by an underground nuclear test. Near Cheshire, the effects of ICUs may be most apparent and impactful to the groundwater flow system at PM because of an unusual combination of thickness, extent, and frequency of dikes transecting the saturated CHLFA4 aquifer and feeding into the overlying unsaturated rhyolite lava of Windy Wash. Chapters 2, 3, and 4 present geological, geophysical, hydrogeological, and hydrological evidence for ICUs at PM. Chapters 5 and 6 examine effects of ICUs on groundwater flow including analysis by groundwater modeling.

54 ENVIRONMENTAL SCIENCES↗

The Creation of True Two-Dimensional Silicon Carbide

This paper reports the successful synthesis of true two-dimensional silicon carbide using a top-down synthesis approach. Theoretical studies have predicted that 2D SiC has a stable planar structure and is a direct band gap semiconducting material. Experimentally, however, the growth of 2D SiC has challenged scientists for decades because bulk silicon carbide is not a van der Waals layered material. Adjacent atoms of SiC bond together via covalent sp3 hybridization, which is much stronger than van der Waals bonding in layered materials. Additionally, bulk SiC exists in more than 250 polytypes, further complicating the synthesis process, and making the selection of the SiC precursor polytype extremely important. This work demonstrates, for the first time, the successful isolation of 2D SiC from hexagonal SiC via a wet exfoliation method. Unlike many other 2D materials such as silicene that suffer from environmental instability, the created 2D SiC nanosheets are environmentally stable, and show no sign of degradation. 2D SiC also shows interesting Raman behavior, different from that of the bulk SiC. Our results suggest a strong correlation between the thickness of the nanosheets and the intensity of the longitudinal optical (LO) Raman mode. Furthermore, the created 2D SiC shows visible-light emission, indicating its potential applications for light-emitting devices and integrated microelectronics circuits. We anticipate that this work will cause disruptive impact across various technological fields, ranging from optoelectronics and spintronics to electronics and energy applications.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

Double-injection, deep-impurity switch development

The overall objective of this program is the development of device design and process techniques for the fabrication of a double-injection, deep-impurity (DI)(2) silicon switch that operates in the 1-10 kV range with conduction current of 10 and 1A, respectively. Other major specifications include a holding voltage of 0 to 5 volts at 1 A anode current, 10 microsecond switching time, and power dissipation of 50 W at 75 C. This report describes work that shows how the results obtained at the University of Cincinnati under NASA Grant NSG-3022 have been applied to larger area and higher voltage devices. The investigations include theoretical, analytical, and experimental studies of device design and processing. Methods to introduce deep levels, such as Au diffusion and electron irradiation, have been carried out to "pin down' the Fermi level and control device-switching characteristics. Different anode, cathode, and gate configurations are presented. Techniques to control the surface electric field of planar structures used for (DI)(2) switches are examined. Various sections of this report describe the device design, wafer-processing techniques, and various measurements which include ac and dc characteristics, 4-point probe, and spreading resistance.

Selim, F. A.↗

GaAs high efficiency limits/geometric enhancements

This workshop addressed efficiency improvements that may be obtained in GaAs solar cells. The cell designs considered by the group ranged from conventional planar structures to novel devices employing superlattices or point contacts.

Spitzer, Mark↗

Characteristics of inhomogeneous coupled cylindrical striplines

Using conformal transformation, closed-form expressions for the even and odd mode impedances of inhomogeneous coupled cylindrical striplines are presented. It is shown that the analysis can be extended for the calculation of characteristics of coupled cylindrical microstrip lines. The analysis can also be extended to reveal the effects of warping due to environmental changes on an otherwise planar structure.

Reddy, C. J.↗

Analysis of coupled cylindrical striplines filled with multilayered dielectrics

A method of analysis for coupled cylindrical striplines filled with multilayered dielectrics is presented that uses a variational technique in the space domain. Coupled-mode analysis is presented for the case of a pair of coupled circular arc strips arbitrarily located between cylindrical ground planes filled with multilayered dielectrics. An even- and odd-mode approach is used for the analysis of shielded cylindrically curved edge-coupled pairs of broad-side parallel strips (broad-side, edge-coupled cylindrical striplines). The effect of environmental changes on an otherwise planar structure is also studied by extending the present analysis to cylindrically warped coupled striplines.

Reddy, C. Jagadeswara↗

Reflection and transmission for layered composite materials

A layered planar structure consisting of different bianisotropic materials separated by jump-immittance sheets is considered. Reflection and transmission coefficients are determined via a chain-matrix algorithm. Applications are important for radomes and radar-absorbing materials.

Graglia, Roberto D.↗

Slot spiral antenna modeling using hybrid/mixed FE-BI technique

This report is concerned with the numerical simulation of the printed slot spiral antenna (SSA) using the finite element - boundary integral (FE-BI) analysis. It has been reported that the FE-BI technique is suited for modeling microstrip patch antennas of any shape, printed on layered planar structure or cylindrical platform and fed with a coaxial cable or a microstripline network underneath the radiating elements. However, direct application of the hybrid FE-BI technique to thin slot spirals requires excessive sampling rates to accurately simulate the geometry. To alleviate the meshing/modeling difficulties encountered with cavity-backed slot antennas, we describe a mixed finite element-boundary integral formulation. As in the past, the boundary integral is used to describe the radiation of the slot above the cavity. However the cavity is now modeled using a suitable mix of edge and node elements. The latter are used only at the aperture of the thin slot so that the nodes follow the center line of the slot. In this manner, regular size elements can be used regardless of the slot's width and any meshing restrictions are substantially relaxed. The proposed mixed element FE-BI formulation introduces three different computational regions and as expected this complicates the generation of the discrete system.

Gong, Jian↗

An Improved Solution for Integrated Array Optics in Quasi-Optical mm and Submm Receivers: the Hybrid Antenna

The hybrid antenna discussed here is defined as a dielectric lens-antenna as a special case of an extended hemi-spherical dielectric lens that is operated in the diffraction limited regime. It is a modified version of the planar antenna on a lens scheme developed by Rutledge. The dielectric lens-antenna is fed by a planar-structure antenna, which is mounted on the flat side of the dielectric lens-antenna using it as a substrate, and the combination is termed a hybrid antenna. Beam pattern and aperture efficiency measurements were made at millimeter and submillimeter wavelengths as a function of extension of the hemi- spherical lens and different lens sizes. An optimum extension distance is found experimentally and numerically for which excellent beam patterns and simultaneously high aperture efficiencies can be achieved. At 115 GHz the aperture efficiency was measured to be (76 4 +/- 6) % for a diffraction limited beam with sidelobes below -17 dB. Results of a single hybrid antenna with an integrated Superconductor-Insulator-Superconductor (SIS) detector and a broad-band matching structure at submillimeter wavelengths are presented. The hybrid antenna is diffraction limited, space efficient in an array due to its high aperture efficiency, and is easily mass produced, thus being well suited for focal plane heterodyne receiver arrays.

Buttgenbach, Thomas H.↗

Vacuum arc plasma thrusters with inductive energy storage driver

An apparatus for producing a vacuum arc plasma source device using a low mass, compact inductive energy storage circuit powered by a low voltage DC supply acts as a vacuum arc plasma thruster. An inductor is charged through a switch, subsequently the switch is opened and a voltage spike of Ldi/dt is produced initiating plasma across a resistive path separating anode and cathode. The plasma is subsequently maintained by energy stored in the inductor. Plasma is produced from cathode material, which allows for any electrically conductive material to be used. A planar structure, a tubular structure, and a coaxial structure allow for consumption of cathode material feed and thereby long lifetime of the thruster for long durations of time.

Schein, Jochen↗

Nanoionics-Based Switches for Radio-Frequency Applications

Nanoionics-based devices have shown promise as alternatives to microelectromechanical systems (MEMS) and semiconductor diode devices for switching radio-frequency (RF) signals in diverse systems. Examples of systems that utilize RF switches include phase shifters for electronically steerable phased-array antennas, multiplexers, cellular telephones and other radio transceivers, and other portable electronic devices. Semiconductor diode switches can operate at low potentials (about 1 to 3 V) and high speeds (switching times of the order of nanoseconds) but are characterized by significant insertion loss, high DC power consumption, low isolation, and generation of third-order harmonics and intermodulation distortion (IMD). MEMS-based switches feature low insertion loss (of the order of 0.2 dB), low DC power consumption (picowatts), high isolation (>30 dB), and low IMD, but contain moving parts, are not highly reliable, and must be operated at high actuation potentials (20 to 60 V) generated and applied by use of complex circuitry. In addition, fabrication of MEMS is complex, involving many processing steps. Nanoionics-based switches offer the superior RF performance and low power consumption of MEMS switches, without need for the high potentials and complex circuitry necessary for operation of MEMS switches. At the same time, nanoionics-based switches offer the high switching speed of semiconductor devices. Also, like semiconductor devices, nanoionics-based switches can be fabricated relatively inexpensively by use of conventional integrated-circuit fabrication techniques. More over, nanoionics-based switches have simple planar structures that can easily be integrated into RF power-distribution circuits.

Nessel, James↗

High temperature selective emitters via critical coupling of weak absorbers

Tailoring the emission spectra of a solar thermophotovoltaic emitter away from that of a blackbody, thereby minimizing transmission and thermalization loss in the energy receiver, is a viable approach to circumventing the Shockley-Queisser limit to single junction solar energy conversion. Embodiments allow for radically tuned selective thermal emission that leverages the interplay between two resonant phenomena in a simple planar structure—absorption in weakly-absorbing thin films and reflection in multi-layer dielectric stacks. A virtual screening approach is employed based on Pareto optimality to identify a small number of promising structures for a selective thermal emitter from a search space of millions, several of which approach the ideal values of a step-function selective thermal emitter.

Martinson, Alex B.↗

Transverse Stability in an Alternating Symmetry Planar Dielectric Wakefield Structure

Dielectric Wakefield Acceleration (DWA) is a promising technique for realizing the next generation of linear colliders. It provides access to significantly higher accelerating gradients than traditional radio-frequency cavities. One impediment to realizing a DWA-powered accelerator is the issue of the transverse stability of the beams within the dielectric structure due to short-range wakefields. These short-range wakefields have a tendency to induce a phenomenon known as single-bunch beam breakup, which acts as its name implies and destroys the relevant beam. We attempt to solve this issue by leveraging the quadrupole mode excited in a planar dielectric structure and then alternating the orientation of said structure to turn an unstable system into a stable one. We examine this issue computationally to determine the limits of stability and based on those simulations describe a future experimental realization of this strategy.

43 PARTICLE ACCELERATORS↗