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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 73 records · Page 4
All sourcesNASA NTRSDOE OSTI
DOE OSTI2026

Pulsed laser synthesis of mesoporous metal chalcogenide thin films

Mesoporous films of the metal chalcogenide B-FeSe were grown on MgO substrates by KrF pulsed laser deposition (PLD) in an argon background. At 100 mTorr, gated intensified charge-coupled device imaging and ion probe measurements showed that the plasma plume responsible for crystal growth initially comprised three components, with distinct expansion velocities. Plume interactions with the substrate heater and ablation target gave rise to complex dynamics, including collisions between the charged leading edge—rebounding between the substrate and the target—and slower-moving species in the plume interior. Film growth was dominated by species with kinetic energies ≤0.5 eV/atom. X-ray reflectivity revealed that films grown in this environment—with a substrate temperature of 350 ° C, a laser fluence of 1.0 J cm −2 , and a 7.5 mm 2 spot area—formed a porous framework with 15% porosity. Atomic force microscopy showed surface features that suggest pore sizes below 100 nm. X-ray diffraction indicated that the porous films were epitaxial with respect to the substrate and likely grew by oriented-attachment of gas-phase molecular clusters or very small nanoparticles, in contrast to the conventional epitaxy of vacuum films from atomic constituents. The in-plane orientation of the mesoporous films was B-FeSe [100]||[110] MgO, attributed to the soft landing of pre-formed crystallites on the MgO substrates, where protruding Se rows of B-FeSe aligned with corrugations of the MgO surface. In conclusion, this work implies that growth of candidate electrocatalyst materials by PLD in inert gas background may allow mesoporous frameworks with a single crystallographic orientation that expose specific crystal facets for electrochemical reactions and active site engineering.

cluster epitaxy↗
DOE OSTI2024

Argon metastable density and temperature of a 94 GHz microplasma

Laser diode absorption spectroscopy is used to experimentally measure Ar(1s 5 ) metastable density and translational gas temperature within a 94 GHz microplasma. A square two-dimensional photonic crystal (PhC) at this resonance frequency serves to ignite and sustain the plasma from 20 to 200 Torr (2.7 × 10 3 –2.7 × 10 4 Pa) by using millimeter wave power from 300 to 1000 mW. Metastable density within the plasma is estimated from the absorption line shape of the laser traversing the PhC. The metastable density reaches an order of 10 19 m –3 at lower pressure and decreases as pressure increases. From the Lorentzian line shape of the absorption profile at 811.53 nm, the gas temperature is extracted and found to increase from 500 K at 20 Torr to 1300 K at 200 Torr. Furthermore, these data are analyzed and compared with a zero-dimensional plasma model and with previous experimental plasma results at 43 GHz.

42 ENGINEERING↗
DOE OSTI2021

High temperature isotropic and anisotropic etching of silicon carbide using forming gas

Plasma-etched micropillars in 4H-SiC were etched in forming gas (4% H2, 96% N2) at 1500, 1550, and 1600 °C at 2.4 and 9.4 standard liters per min (slm). At 2.4 slm, oxygen from the aluminum oxide components of the tube furnace oxidized the SiC surface, and the pillars etched isotropically. Additionally, at 9.4 slm, the pillars etched crystallographically at 1500 and 1550 °C, and sharp 4H-SiC needless with tips as narrow as 15 nm were produced. The lateral etch rates of both 4H- and 6H-SiC were measured with the a-plane etching faster than the m-plane at 1500 and 1550 °C. At 1600 °C, the m-plane and a-plane etch at comparable rates. Due to the difference in etch rates between the m-plane and a-plane, convex surfaces tend to produce facets parallel to the a-plane, while concave surfaces produce facets parallel to the m-plane.

42 ENGINEERING↗
DOE OSTI2022

High Voltage Regrown GaN P-N Diodes Enabled by Defect and Doping Control

This project studied and implemented methods to form GaN p-n diodes using selective area regrowth to achieve selective area doping. Successful selective area doping of GaN p-n diodes is an enabling factor to realize more advanced devices such as vertical transistors. The general challenge to selective area regrowth of GaN is that the primary etch method, inductively coupled plasma (ICP), damages the crystal and causes high leakage when didoes are formed by regrowth on the etched surface. Our approach used low damage etch methods following ICP etch to remove crystal damage and reduced leakage in the regrown diode. This project demonstrated 1.6 kV etched-and-regrown GaN p-n diodes using planar (non-selective) regrowth and 840 V etched-and-regrown p-n diodes using selective area regrown. Enabling factors were use of a low-damage reactive ion etch (RIE) to remove damage caused by the primary ICP etch combined with a multi-step junction terminal extension (JTE) process. Deep level defect investigation quantitatively correlated a deep level near the middle of the GaN band gap with ICP etch-induced leakage that was greatly mitigated by using a slow, low damage RIE process. This research is economically feasible for commercialization because the processes used in this project, including substrate type and source, epitaxial crystal growth and fabrication techniques are all standard to the GaN semiconductor industry. The fundamental understanding and foundational ability to produce kV-class GaN p-n diodes through etch-and-regrowth provides a path to realize high power, high efficiency GaN power switches that can significantly outperform commercial devices for next-generation electrical power conversion and transmission systems.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Comparing plasma conditions in short-pulse-heated foils via fine-structure x-ray emission

Fine-structure x-ray spectra have been measured from foils with embedded tracer layers at two laser facilities. In this work, a suite of layered foils with thin Ti tracers under varied tamper layers was studied at both the Titan and the ALEPH 400 nm laser facilities, where Ti Heα emission was recorded using a high-resolution Bragg crystal spectrometer. Several indicators of plasma parameters are examined in the spectra, including temperature- and density-dependent line ratios and line broadening from Stark and opacity effects. Spectra indicate that (1) the plasma density at ALEPH is significantly higher than at Titan and (2) the electron temperature is high for near-surface layers at both facilities but drops more quickly with depth at ALEPH. These inferences of plasma conditions are consistent with differing levels of temporal contrast at each laser facility.

47 OTHER INSTRUMENTATION↗
DOE OSTI2025

Understanding the limitations and potential of micro tensile testing of tungsten and needs for crystal plasticity modelling

Tungsten is the leading plasma facing material candidate due to its exceptional properties. Understanding the response to neutron irradiation is crucial for the lifetime evaluation of tungsten. The limited space in nuclear reactors and the high levels of radioactivity of the specimens after irradiation are significant barriers to accurately measuring the mechanical properties after neutron irradiation. Testing of micro tensile specimens is one approach to reduce the total amount of irradiated material needed for a set of mechanical testing experiments. However, micro samples are not necessarily measuring the bulk material properties, as size effects produce higher measured mechanical properties than is observed in engineering size counterparts. Determining the minimal sample size for reliable bulk property measurement, combined with modeling efforts, is essential. We conducted room temperature tensile tests on tungsten micro tensile specimens fabricated with focused ion beam, plasma focused ion beam and femto-second laser ablation system to dimension of 2×2×7?µm³, 7×7×18?µm³, and 80×100×233?µm³ (width×thickness×gauge-length), respectively. Elevated tensile testing was performed up to 475°C on 5×5×18?µm³ specimens fabricated with focused ion beam. The smallest specimens exhibited a high degree of ductility and strength, whereas the largest specimens demonstrated behavior akin to bulk tungsten. To investigate the effects introduced by the micro specimen fabrication processes and to obtain the necessary bulk dislocation density for the crystal plasticity model, we employed X-ray diffraction depth profiling. This measurement was performed using different X-ray sources with varying penetration depths. Finally, the potential and limitations of micro mechanical tests for tungsten will be discussed.

36 - MATERIALS SCIENCE↗
DOE OSTI2021

Detailed diffraction imaging of x-ray optics crystals with synchrotron radiation

Rocking curve topography at the Advanced Photon Source’s beamline 1-BM measures the x-ray reflection from large (many cm 2 ) flat crystals on a sub-mm scale with microradian angular resolution. The $(01\bar{1}1)$ reflection at 8 keV is uniform across the crystal and close to theory for three thick quartz wafers well-polished with increasingly finer grit. However, the reflection is non-uniform for some ~ 0.1mmthin, bendable crystals that are made flat by optical contact with a flat substrate. Here, these thin crystals are bent to serve in certain x-ray diagnostics of plasmas, and similar non-uniformities could then occur in bent crystals as well. The same detail in x-ray reflection in bent crystals is unachievable with the existing topography setup: one way to get the desired resolution is with a standard microfocusing approach.

47 OTHER INSTRUMENTATION↗
DOE OSTI2022

Design Considerations for Controlling Silicon Nanoparticle Nucleation and Growth in a Nonthermal Plasma

Controlling the nucleation and growth of nanoparticles in low temperature plasma systems is imperative for controlling nanoparticle size distributions; and for some applications such as deposition and etching in microelectronic processing, preventing particle contamination. In this work, silicon nanoparticle (NP) production from silane is used as a model system to investigate the nucleation process. Although the mechanisms responsible for silicon NP nucleation and growth have been studied, it is unclear how controllable system parameters (e.g., pressure, system geometry, and gas composition) can be used to inhibit or promote NP formation. For example, the transport of reactive silane species is expected to significantly affect the feed fraction of silane required to nucleate silicon NP (the nucleation onset fraction) due to losses at the reactor walls. In this work, NP mass density was determined as a function of system pressure, gas composition, and reactor diameter for a tubular flow-through radiofrequency (RF) plasma using Ar/H2/He/SiH4 gas mixtures. A quartz crystal microbalance (QCM) impactor was developed to measure the total aerosol mass density downstream of the plasma and thereby identify the nucleation onset and its dependence on process parameters. Finally, a reaction mechanism was developed and incorporated into a global plasma chemistry model to better understand the nucleation onset and NP growth.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Evolution of structure and transport properties of the Ba 8 Cu 16 P 30 clathrate-I framework with the introduction of Ga

Two type-I clathrates were synthesized by introducing Ga into the framework of the Ba 8 Cu 16 P 30 type-I clathrate. The introduction of minute amounts of Ga, 1.9% Ga/M total (where M total = Cu + Ga), resulted in the disturbance of the completely ordered Pbcn superstructure of Ba 8 Cu 16 P 30 . Ba 8 Cu 15.43(2) Ga 0.3 P 30.26(3) crystallizes in a partially ordered orthorhombic Pmna clathrate-I superstructure with five out of 15 framework sites being jointly occupied by metal+phosphorus. Increasing the Ga content resulted in all framework sites being occupied by metal + phosphorus in the archetype cubic Pm n clathrate-I crystal structure of Ba 8 Cu 14.5(3) Ga 1.3 P 30.2(4) with 8.2% Ga/M total . A combination of energy dispersive x-ray spectroscopy, inductively coupled plasma mass spectroscopy, and single crystal x-ray diffraction was used to determine the structures alongside the compositions. The positional disorder was verified by 31 P solid state NMR spectroscopy. Characterization of the transport properties indicated that the Ga-substituted samples exhibit higher Seebeck coefficients and electrical resistivities compared to its pristine counterpart, in line with the expected reduction of the hole concentration due to Ga/Cu substitution. Moderate improvements in the thermoelectric power factor and overall figure-of-merit were observed for samples with 6.9% and 3.8% Ga/M total as compared to those for the pristine Ba 8 Cu 16 P 30 clathrate. Finally, band structure calculations shed light on how Ga substitution affects the electronic structure and thermoelectric properties of studied clathrates.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2025

Operando XPS in reactive plasmas: The importance of the wall reactions

In this article, advancements in differential pumping and electron optics over the past few decades have enabled x-ray photoelectron spectroscopy (XPS) measurements at (near-)ambient pressures, bridging the pressure gap for characterizing realistic sample chemistries. Recently, we have demonstrated the capabilities of an ambient pressure XPS setup for in situ plasma environment measurements, allowing plasma-surface interactions to be studied in operando rather than using the traditional before-and-after analysis approach. This new “plasma-XPS” technique facilitates the identification of reaction intermediates critical for understanding plasma-assisted surface processes relevant to semiconductor nanomanufacturing, such as physical vapor deposition, etching, atomic layer deposition, and many other plasma applications. In this paper, we apply the plasma-XPS approach to monitor real-time surface chemical changes on a model Ag(111) single crystal exposed to oxidizing and reducing plasmas. We correlate surface-sensitive data with concurrent gas-phase XPS measurements and residual gas mass-spectrum analysis of species generated during plasma exposure, highlighting the significant role of plasma-induced chamber wall reactions. Ultimately, we demonstrate that plasma-XPS provides comprehensive insights into both surface and gas-phase chemistry, establishing it as a versatile and dynamic characterization tool with broad applications in microelectronics research. Finally, we outline potential enhancements and future metrology directions to advance plasma-XPS investigations further.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Electric Field Measurements at the Surface of a Piezoelectric Transformer for Plasma Jet Formation using the Plasma Research Facility at Sandia National Laboratory (Final Report)

The overall goal of this research is to understand how low-temperature non-equilibrium plasmas form directly off the surface of piezoelectric crystals. Specifically, this project aims to temporally and spatially resolve how the electric field evolves on and near the surface of a piezoelectric transformer (PT) at conditions that produce an atmospheric-pressure air plasma jet emanating from the corner of the PT. In this work, we used the Plasma Research Facility (PRF) at Sandia National Laboratory to conduct temporally- and spatially-resolved electric field induced second harmonic (E-FISH) measurements of the electric field at and near the surface of a piezoelectric transformer, providing a fundamental understanding of how piezoelectric crystals can be used for plasma generation. We carried out two Objectives: Objective 1 – The first objective was to measure the temporal and spatial evolution of the electric field along the surfaces approaching the corner of a rectangular PT just below conditions that lead to plasma jet formation. Such a measurement can be used to explain when and where the electric field peaks, leading to plasma formation; Objective 2 – The second objective was to measure the temporal and spatial evolution of the electric field along the surfaces approaching the corner of a rectangular PT just at conditions of plasma jet formation. This, in principle, gives a more accurate determination of how the electric field leads to plasma formation but is more difficult due to the relatively stochastic plasma jet behavior of a PT. This work was complemented by an award from the Sandia PRF, and we worked with Dr. Edward Barnat at the Sandia PRF to carry out these objectives.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2026

Physics of Ultra-High Energy Density Relativistic Plasmas from Ordered Nanostructures

This award funded a four-year program at Colorado State University on the physics of ultra-high energy density plasmas generated by focusing femtosecond, >1021 Wcm-2 laser pulses onto ordered nanowire arrays. We used the ALEPH petawatt-class Ti:Sa laser with its high contrast 400 nm second harmonic beamline to irradiate arrays of Ni and TiO2 nanowires made by template assisted electrodeposition and atomic layer deposition over a wide range of average densities. We met two of the three original project goals: radial ion acceleration via doppler shifted K shell emission, and time and spectrally resolved K shell measurements. The main experimental advance was integrating the Lawrence Livermore National Laboratory (LLNL) TREX ultrafast x-ray streak camera with a suite of spherically bent quartz Bragg crystal spectrometers built using Princeton Plasma Physics Laboratory (PPPL) methodology. This is the first TREX-on-bent-quartz setup fielded at a femtosecond, >1021 Wcm-2 facility. It is now a permanent diagnostic at ALEPH and is offered to the LaserNetUS user community. The program produced three peer reviewed journal articles that acknowledge this award. The platform will continue at the upgraded CSU ATLAS facility, where the ALEPH laser is being upgraded to 2 PW.

Hollinger, Reed [Colorado State University]↗
NASA NTRS2002

Microscopic Foundation and Simulation of Coupled Carrier-Temperature Diffusions in Semiconductor Lasers

A typical semiconductor-based optoelectronic device, such as a diode laser, consists of three subsystems: an optical field, an electron-hole plasma (EHP), and a host crystal lattice. The physics of such a device involves the interplay of optical, electrical and thermal processes. A proper description of such a device requires that all three processes are treated on equal footing and in a self-consistent fashion. Furthermore, since a semiconductor laser has intrinsic spatial inhomogeneity, such a self-consistency naturally leads to a set of partial differential equations in space and time. There is a significant lacking of research interest and results on the transport aspects of optical devices in the literature with only a few exceptions. Even the most important carrier diffusion coefficient has not been properly derived and studied so far for optically excited plasma, while most of the work adopted results from electronics community where heavily doped semiconductors with mainly one type of carriers are dealt with. The corresponding transport equation for plasma energy or temperature has received even less attention. In this talk we describe our recent results on such a self-consistent derivation of temperature and carrier-density diffusion equations coupled with the lasing process. Starting from the microscopic semiconductor Bloch equations (SBEs) including the Boltzmann transport terms in the distribution function equations for electrons and holes, we derived a closed set of diffusion equations for carrier densities and temperatures with self-consistent coupling to Maxwell's equation and to an effective optical polarization equation. The coherent many-body effects are included within the screened Hartree-Fock approximation, while scatterings are treated within the second Born approximation including both the in- and out-scatterings. Microscopic expressions for electron-hole (e-h) and carrier-LO (c-LO) phonon scatterings are directly used to derive the momentum and energy relaxation rates. These rates expressed as functions of temperatures and densities lead to microscopic expressions for self- and mutual-diffusion coefficients in the coupled density-temperature diffusion equations. Approximations for reducing the general two-component description of the electron-hole plasma (EHP) to a single-component one are discussed. In particular, we show that a special single-component reduction is possible when e-h scattering dominates over c-LO phonon scattering. The ambipolar diffusion approximation is also discussed and we show that the ambipolar diffusion coefficients are independent of e-h scattering, even though the diffusion coefficients of individual components depend sensitively on the e-h scattering rates. Our discussions lead to new perspectives into the roles played in the single-component reduction by the electron-hole correlation in momentum space induced by scatterings and the electron-hole correlation in real space via internal static electrical field. Finally, the theory is completed by coupling the diffusion equations to the lattice temperature equation and to the effective optical polarization which in turn couples to the laser field. The equations derived above are implemented in various limiting cases to a typical diode laser to study the consequences of nonlinear diffusion and the cross diffusion terms on laser behavior, especially the dynamic behavior of a diode laser under modulation. Detailed results will be presented by comparing with the standard rate equation results.

Li, J.↗
DOE OSTI2023

Magnetic field effects and transverse ratchets in charge lattices coupled to asymmetric substrates

We examine a charge lattice coupled to a one-dimensional asymmetric potential in the presence of an applied magnetic field, which induces gyrotropic effects in the charge motion. This system could be realized for Wigner crystals in nanostructured samples, dusty plasmas, or other classical charge-ordered states where gyrotropic motion and damping can arise. For zero magnetic field, an applied external ac drive can produce a ratchet effect in which the particles move along the easy flow direction of the substrate asymmetry. The zero field ratchet effect can only occur when the ac drive is aligned with the substrate asymmetry direction; however, when a magnetic field is added, the gyrotropic forces generate a Hall effect that leads to a variety of new behaviors, including a transverse ratchet motion that occurs when the ac drive is perpendicular to the substrate asymmetry direction. We show that this system exhibits commensuration effects as well as reversals in the ratchet effect and the Hall angle of the motion. The magnetic field also produces a nonmonotonic ratchet efficiency when the particles become localized at high fields.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2022

Optically pumped deep-UV multimode lasing in AlGaN double heterostructure grown by molecular beam homoepitaxy

Multimode lasing at sub-300 nm wavelengths is demonstrated by optical pumping in AlGaN heterostructures grown on single-crystal AlN substrates by plasma-assisted molecular beam epitaxy. Edge-emitting ridge-based Fabry–Pérot cavities are fabricated with the epitaxial AlN/AlGaN double heterostructure by a combined inductively coupled plasma reactive ion etch and tetramethylammonium hydroxide etch. The emitters exhibit peak gain at 284 nm and modal linewidths on the order of 0.1 nm at room temperature. The applied growth technique and its chemical and heterostructural design characteristics offer certain unique capabilities toward further development of electrically injected AlGaN laser diodes.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Exploring the THz Frontier of Experimental Microplasma (Final Report)

This is the final report for a three-year program to explore photonic crystals as a scalable medium for creating extremely high frequency plasma. The plasmas are then experimentally characterized and modeled. The conclusion of this work is that the photonic crystal is an attractive mode for creating plasma devices that extend into the THz band.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2024

X-ray sources for in situ wavelength calibration of x-ray imaging crystal spectrometers

X-ray sources for a range of wavelengths are being considered for in situ calibration of X-ray Imaging Crystal Spectrometers (XICSs) and for monitoring line shifts due to changes in the crystal temperature, which can vary during experimental operation over a day [A. Ince-Cushman et al., Rev. Sci. Instrum. 79, 10E302 (2008), L. Delgado-Aparicio et al., Plasma Phys. Control. Fusion 55, 125011 (2013)]. Such crystal temperature dependent shifts, if not accounted for, could be erroneously interpreted as Doppler shifts leading to errors in plasma flow-velocity measurements. The x-ray sources encompass characteristic x-ray lines falling within the wavelength range of 0.9–4.0 Å, relevant for the XICSs on present and future fusion devices. Several technological challenges associated with the development of x-ray sources for in situ calibration are identified and are being addressed in the design of multiple x-ray tubes, which will be installed inside the spectrometer housing of the XICS for the JT-60SA tokamak. These x-ray sources will be especially useful for in situ calibration between plasma discharges. Here, in this paper, laboratory experiments are described that were conducted with a Cu x-ray source, a heated quartz (102) crystal, and a pixelated Pilatus detector to measure the temperature dependent shifts of the Cu Kα 1 and Kα 2 lines at 1.5405 and 1.5443 Å, respectively, and to evaluate the 2d-lattice constant for the Bragg reflecting crystal planes as a function of temperature, which, in the case of in situ wavelength calibration, would have to be used for numerical analysis of the x-ray spectra from the plasma.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗