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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 73 records · Page 4
All sourcesNASA NTRSDOE OSTI
DOE OSTI2019

650V SiC Integrated Power Module for Automotive Inverters

The Delphi team, including CREE/Wolfspeed for SiC power devices, with packaging by Delphi supported by Oak Ridge National Laboratory, and guidance from Volvo and other OEMs resulted in a robust, high performance integrated double-side cooled SiC-based Power Module that meets or exceeds the targets identified by DOE in the original FOA. The double-side cooled packages were designed to be scalable for voltages up to 800V and for phase currents up to 500Arms and that can be paralleled for currents up to 90Arms. These modules were confirmed and demonstrated in a traction drive inverter intended for an inverter for a specific OEM vehicle application and showed improved performance as compared to inverter systems with silicon based IGBTs and Diode with losses 70% lower at lower currents and up to 40% lower at peak current levels. This teaming resulted in a WBG integrated power module to be used in an inverter manufactured in Kokomo, Indiana, which will be manufacturable in volume at a cost that will enable reduced vehicle to cost improved performance, particularly by reducing weight and space-claim for the power electronics, as well as improving reliability overall. The targeted use of this developed power module is for a vehicle traction drive to be manufactured in the CY 2021 timeframe. The direct impact of this project will accelerate commercialization of advanced wide bandgap power semiconductor technology for electrified vehicles of all types, increasing their energy efficiency and marketability. In turn, more efficient and more marketable electrified vehicles will have the overall impact of reducing greenhouse gas emissions and other air pollutants, along with reducing our nation’s dependence on foreign energy sources.

33 ADVANCED PROPULSION SYSTEMS↗
DOE OSTI2020

Graphite-Embedded High-Performance Insulated Metal Substrate for Wide-Bandgap Power Modules

Emerging wide-bandgap (WBG) semiconductor devices such as silicon carbide (SiC) metal–oxide semiconductor field-effect transistors (MOSFETs) and gallium nitride high-electron-mobility transistors can handle high power in reduced semiconductor areas better than conventional Si-based devices owing to superior material properties. With increased power loss density in a WBG-based converter and reduced die size in power modules, thermal management of power devices must be optimized for high performance. Here, we present a graphite-embedded insulated metal substrate (thermally-annealed-pyrolytic-graphite-embedded insulated metal substrate—IMSwTPG) designed for WBG power modules. Theoretical thermal performance analysis of graphite-embedded metal cores is presented, with design details for IMSwTPG with embedded graphite to replace a direct-bonded copper (DBC) substrate. The proposed IMSwTPG is compared with an aluminum nitride-based DBC substrate using finite-element thermal analysis for steady-state and transient thermal performance. The solutions’ thermal performances are compared under different coolant temperature and thermal loading conditions, and the proposed substrate's electrical performance is validated with static and dynamic characterization. Using graphite-embedded substrates, junction-to-case thermal resistance of SiC MOSFETs can be reduced up to 17%, and device current density can be increased by 10%, regardless of the thermal management strategy used to cool the substrate. Reduced transient thermal impedance of up to 40% of dies owing to increased heat capacity is validated in transient thermal simulations and experiments. The half-bridge power module's electrical performance is evaluated for on -state resistance, switching performance, and switching loss at three junction temperature conditions. The proposed substrate solution has minimal impact on conduction and switching performance of SiC MOSFETs.

42 ENGINEERING↗
DOE OSTI2021

Control approach for power modulation of end-use loads

Methods, apparatus, and systems are disclosed herein for power modulation control of power grids using end-use loads. At the beginning of a coordination period typically lasting a few minutes, a population of end-use loads (water heaters, air conditioners, plug-in electric vehicles, etc.) is interrogated for their willingness to participate in power modulation by undergoing state transitions from on to off, or off to on. Distribution system flexibilities are calculated from the sums of device powers within distribution systems. Area flexibilities are calculated from the sums of device powers within areas. Thresholds for various devices to change state in response to inter-area oscillation damping or frequency regulation are derived from these flexibilities. Two power functions are monitored in real-time and compared with the device thresholds to trigger state changes which then remain locked throughout the remainder of the coordination period, then the devices are released from the lockout state.

Lian, Jianming↗
DOE OSTI2018

Development of a low-inductance SiC trench MOSFET power module for high-frequency application

This paper deals with the development of a low-inductance multiple-chip power module with state-of-art 1200 V SiC Trench MOSFETs for high-frequency application. Specifically, a phase-leg power module package with integrated decoupling capacitance is fabricated based on P-cell/N-cell concept, and the packaging design is discussed in detail. Dedicated double pulse test is built, and a gate driver with cross-talk suppression function is designed to support the fast switching speed operation of SiC Trench MOSFETs. The parasitic inductance and current density distribution of the power module are simulated and extracted for the purpose of voltage spike limiting. The temperature dependent static and switching characteristics of the developed module are evaluated as well, and the key differences from traditional SiC double-diffused MOS (DMOS) are identified and discussed. Based on the turn-off switching characterization results, a lumped equivalent power-loop parasitic inductance of ~6 nH is achieved for the designed power module.

Wang, Zhiqiang↗
DOE OSTI2018

Analysis and Experimental Evaluation of Middle-Point Inductance's Effect on Switching Transients for Multiple-Chip Power Module Package

Middle-point inductance L middle can be introduced in multiple-chip power module package designs. In this paper, the effect of middle-point inductance on switching transients is analyzed first using a frequency-domain analysis. Then a dedicated multiple-chip power module is fabricated with the capability of varying L middle , and extensive switching tests are conducted to evaluate the middle-point inductance's impact. Experiment result shows that the active MOSFET's turn-on loss decreases at higher values of L middle , while its turn-off loss increases. Detailed analysis of this loss variation is presented. In addition to the switching loss variation, it is also observed that different peak voltage stresses are imposed on the active switch and antiparallel diode during the switching transients. Specifically, in the case of lower MOSFET's turn-off, the maximum voltage of the lower MOSFET increases as L middle goes up; however, the peak voltage of the antiparallel diode decreases significantly. Furthermore, the induced voltage spikes during upper MOSFET turn-on process is also evaluated, and an opposite trend is observed experimentally. Analysis of the voltage overshoot variation is discussed. Based on the experimental evaluation and analysis, a multiple-chip power module package design guideline is summarized considering the middle-point inductance's effect.

42 ENGINEERING↗
NASA NTRS1979

A programmable power processor for a 25-kW power module

A discussion of the power processor for an electrical power system for a 25-kW Power Module that could support the Space Shuttle program during the 1980's and 1990's and which could be a stepping stone to future large space power systems is presented. Trades that led to the selection of a microprocessor-controlled power processor are briefly discussed. Emphasis is given to the power processing equipment that uses a microprocessor to provide versatility that allows multiple use and to provide for future growth by reprogramming output voltage to a higher level (to 120 V from 30 V). Efficiency data from a breadboard programmable power processor are presented, and component selection and design considerations are also discussed.

Lanier, R., Jr.↗
DOE OSTI2025

Packaging a 650V/400A GaN Half-bridge Power Module with Ultra-low Parasitics for Electric Vehicle Drive Applications

This paper proposes a compact and efficient half-bridge power module with three 650 V / 150 A GaN dies in parallel. The power module incorporates a main power printed circuit board (PCB), an interface PCB, and a flex PCB to achieve low parasitics in both power loop and gate-side connection, resolving the issue of high parasitics typically encountered with wire bonding in high-current applications. Additionally, the interface PCB decouples the design constraints between the power loop and the gate loops. The proposed design is optimized with a vertical loop configuration to reduce power loop inductance through magnetic flux cancellation. Finite element analysis indicates that the power loop inductance is 0.58 nH at 100 MHz, while the maximum die junction temperature reaches 131 °C under an ambient temperature of 65 °C and a load current of 385 A. The proposed multi-piece PCB structure reduces the inductance of the drive circuit to minimize EMI and to mitigate false triggering. At the same time, it reduces impedance mismatches across different driver circuits, thereby achieving dynamic current sharing in multi-chip parallel configurations. Under simulation conditions of 400 V / 385 A, the current imbalance among chips was limited to 5 A. A 400 V / 385 A double-pulse test was conducted to experimentally validate the performance of the proposed power module.

30 DIRECT ENERGY CONVERSION↗
DOE OSTI2025

Thermal Optimization and Experimental Demonstration of a Silicon Carbide, Half-Bridge Power Module

This paper describes modeling and experimental work to design and demonstrate a silicon carbide (SiC), single-side-cooled power module. Two SiC metal-oxide-semiconductor field-effect transistors (MOSFET) were used for each switch position and packaged on a metalized ceramic substrate. Thermal modeling was first conducted to optimize the module packaging to minimize junction-to-fluid thermal resistance and device temperature variations. This procedure identified the optimal device placement and baseplate thickness to maximize thermal performance. A heat exchanger - incorporating impinging jets of water-ethylene glycol - was designed to cool the module's baseplate to minimize thermal resistance and pumping power. The heat exchanger used relatively low fluid velocities (<1.5 m/s) to minimize erosion-corrosion effects and relatively large fluid channel sizes (>=1 mm) to prevent clogging. The power module concept was fabricated, and experiments were conducted to measure its thermal performance. Direct current was used to power the module devices, and junction temperatures were measured via device temperature-sensitive parameters. The experimental results were found to be in good agreement with model predictions (within 2%) and yielded junction-to-fluid thermal resistance values as low as about 15 mm2 K/W at relatively low pumping power values. The results demonstrate the improved performance associated with jet impingement cooling and represent an improvement over existing channel-flow-type cold plates, which can enable improvements to power density and reliability.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Organic Direct-Bonded-Copper-Based Rapid Prototyping for Silicon Carbide Power Module Packaging

Silicon carbide (SiC) power devices are playing ever- growing roles in high-power-density power electronics converters by offering benefits such as high voltage rating, fast transients, and high thermal performance. Organic direct-bonded copper (ODBC)-based packaging, due to its ductility and ease of han- dling, allows the possibility of a more flexible layout design that may better tap the potential of SiC benefits. In this work, an ODBC-based prototyping routine is developed that accelerates the iterations of packaging layout design with low cost. The properties of ODBC and its handling are briefly introduced, and tools and fabrication steps are explained. Following this routine, a 1.2-kV SiC half-bridge power module is designed and fabricated with the focus on sub-nanohenry ultra-low loop inductance. Simulation and experimental validation are also conducted.

25 ENERGY STORAGE↗
DOE OSTI2020

Highly Integrated WBG Power Module for Next Generation Plug-In Vehicles

Current inverter technologies used in electric vehicles (EVs) are bulky, heavy, and expensive. The performance of the inverter is also limited by the traditional Si-based semiconductor and packaging technology. These constraints are responsible for extra weight and volume in the vehicle that reduces the driving range along with usable space within the vehicle. Moreover, operating temperature restrictions, and boundaries on the inverter location within the vehicle drastically reduces the inverter performance. Thus an improved inverter design is required for next generation electric vehicles. The objective of this project was to research, develop and demonstrate a highly integrated WBG power module targeting the next generation of plugin hybrid electric vehicles (PHEVs). This power module needed to be functionally and mechanically optimized for General Motors (GM) traction inverter architecture. General Motors was the prime contractor, led the project, and oversaw the design, build, and test of the integrated power module. Virginia Polytechnic Institute and State University (VT) performed modeling and simulation tasks as well as power module design support. Monolith Semiconductor, Inc provided SiC dies and consulted on devices for the inverter. Oak Ridge National Laboratory (ORNL) performed power module technology evaluations, design evaluations of interconnect options, and performed material analysis and cross-sectioning of die activities.

33 ADVANCED PROPULSION SYSTEMS↗
DOE OSTI2019

Design, Analysis and Comparison of Insulated Metal Substrates for High Power Wide-Bandgap Power Modules

In this technical paper, design, analysis and comparison of insulated metal substrates for high power wide-bandgap semiconductor-based power modules is discussed. The paper starts with technical description and discussion of state-of-the-art direct bonded copper substrates with different ceramic insulators such as AlN, Al2O3 and Si3N4. This is followed by introduction of insulated metal substrates, material properties and options on each layer, and design approach for high power applications. The properties of dielectric thickness, and impact on power handling capability of the substrate are discussed. Insulated metal substrate design approach for SiC MOSFET based power modules is presented. Finite element analysis-based characterization and comparison of different designs including steady-state and transient thermal response is presented. The results show that IMS is a promising alternative to DBC in high power modules with improved transient thermal performance. IMS provides flexible building structure with multi-layer stacking options and variable thicknesses at different layers.

Gurpinar, Emre↗
DOE OSTI2022

In-Package Common-Mode Filter for GaN Power Module with Improved Radiated EMI Performance

This paper discusses the impact of parasitic inductances on the electromagnetic interference (EMI) performance at radiated frequency and provides a new concept for high-frequency wide bandgap (WBG) power module package design with integrated π-type common mode filter (π-CMF). The connection parasitic-inductances of a π-type CMF model are analyzed, and the parasitic inductances from the CMF to the CM noise source and to the heatsink are minimized to improve the CMF's EMI performance in the radiated frequency range. Therefore, placing the π-CMF closer to the power module (i.e. in-package CMF) provides a larger noise attenuation compared to placing it outside the module (i.e. external CMF). To verify the theoretical analysis, a half-bridge GaN power module with an in-package π-CMF is designed, and experiments are conducted by comparing the attenuated noise spectrums of a 70-V/1.75-A hard-switching buck converter built by the designed module with an external CMF and the power-module integrated CMF. According to the experiment results, up to 10 dBμV more attenuation is achieved by the in-package CMF than the external CMF, validating the analytical conclusion.

Xue, Lincoln↗
DOE OSTI2018

50-kW 1kV DC bus air-cooled inverter with 1.7 kV SiC MOSFETs and 3D-printed novel power module packaging structure for grid applications

The traditional heatsink design technologies for forced air-cooling and power semiconductors with low junction temperatures have constrained the converters to be designed with massive heatsinks. The low power losses of WBG device technology and higher junction temperature operation over a wide operating range of power have not been fully utilized with liquid-cooled systems. The other major limitation has also been the traditional power module packaging “stack” approach with baseplate. This paper presents a novel power stage design which involves 1.7 kV silicon carbide (SiC) MOSFETs, a heatsink design with Genetic Algorithm (GA) and built using 3D printing technology, and a novel integrated modular power module for high power density. The air-cooled module assembly has a SiC MOSFET phase leg module with split high-side and low-side switches and a gate driver with cross-talk and short circuit protection functions. The heatsink design was modeled using a co-simulation environment with finite element analysis software and GA in MATLAB and COMSOL. The proposed concepts were verified and validated through experiments at each stage of development. The power stage was evaluated at 800V, 900 V, and 1kV for 20 kHz switching frequency and 50-kW load. The experimental results show that the CEC efficiency is 98.4 %. In addition to the efficiency, a power density of 75 W/in 3 was also achieved.

Chinthavali, Madhu Sudhan↗
DOE OSTI2021

A Double-side Cooled SiC MOSFET Power Module with Sintered-silver Interposers: I. Design, Simulation, Fabrication, and Performance Characterization

Planar, double-side cooled power modules are emerging in electric-drive inverters because of their low profile, better heat extraction, and lower package parasitic inductances. However, there is still concern about their reliability due to the rigid interconnection between the device chips and two substrates of the power module. In this paper, a porous interposer made of low-temperature sintered silver is introduced to reduce the thermo-mechanical stresses in the module. A double-side cooled half-bridge module consisting of two 1200 V, 149 A SiC MOSFETs was designed, fabricated, and characterized. By using the sintered-Ag instead of solid copper interposers, our simulation results showed that at a total power loss of 200 W, the thermo-mechanical stress at the most vulnerable interfaces (interposer-attach layer) was reduced by 42 % and in the SiC MOSFET by 50 % with a trade-off of only 3.6 % increase in junction temperature. The sintered-Ag interposers were readily fabricated into desired dimensions without post-machining and did not require any surface finishing for die-bonding and substrate interconnection by silver sintering. Here, the porous interposers were also deformable under a low force or pressure, which helped to accommodate chip thickness and/or substrate-to-substrate gap variations in the planar module structure, thus simplifying module fabrication. Experimental results on the electrical performance of the fabricated SiC modules validated the success of using the porous silver interposers for fabricating planar, double-side cooled power modules.

42 ENGINEERING↗
DOE OSTI2018

Low profile, highly configurable, current sharing paralleled wide band gap power device power module

A method of making a power module includes providing a base plate defining a topology pattern, providing a power substrate above the base plate, providing at least two power contacts and arranging solder catches in the at least two power contacts, soldering the at least two power contacts to the power substrate utilizing the solder catches, and securing a housing to the power substrate.

42 ENGINEERING↗
NASA NTRS2002

High Performance Power Module for Hall Effect Thrusters

Previous efforts to develop power electronics for Hall thruster systems have targeted the 1 to 5 kW power range and an output voltage of approximately 300 V. New Hall thrusters are being developed for higher power, higher specific impulse, and multi-mode operation. These thrusters require up to 50 kW of power and a discharge voltage in excess of 600 V. Modular power supplies can process more power with higher efficiency at the expense of complexity. A 1 kW discharge power module was designed, built and integrated with a Hall thruster. The breadboard module has a power conversion efficiency in excess of 96 percent and weighs only 0.765 kg. This module will be used to develop a kW, multi-kW, and high voltage power processors.

Pinero, Luis R.↗
DOE OSTI2023

PCB-on-DBC GaN Power Module Design with High-Density Integration and Double-Sided Cooling

Lateral gallium nitride (GaN) high-electron-mobility transistors (HEMTs) present better electrical characteristics compared to silicon or silicon carbide devices such as high switching speed and low gate charge, but also present additional challenges on the module design. Here, this paper discusses a high-density GaN power module with double-sided cooling, low inductance, on-package decoupling capacitors, and integrated gate drivers. The GaN dies as well as the gate drive are sandwiched between the printed circuit board (PCB) and direct bonded copper (DBC) substrate to achieve compact loop and double-sided cooling effect. Design considerations and thermal performance are analyzed. A module assembly procedure is presented utilizing the layer-by-layer attachment process. Finally, a 2.7 cm x 1.8 cm half-bridge GaN power module is fabricated and tested, achieving a low power-loop inductance of 1.03 nH, and the overshoot voltage of the switching waveform is less than 5% under a 400-V/25-A double-pulse test. The thermal resistance is 0.32 K/W, verified by simulation and experimental results. The design and assembly process can be generalized and applied to high power applications to achieve high power density and high performance.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
NASA NTRS2018

GT SUITE Fuel Cell Model Validation with Power Module Test Data

The AES Modular Power Systems (AMPS) Fuel Cell team at the NASA Glenn Research Center (GRC) has created a Microsoft Excel model of a regenerative fuel cell (RFC) system for potential lunar and Martian applications. Due to some limitations of this model, including the ability to predict transient effects in the thermal and fluidic performance of the system, a system-level transient thermal/fluids model was desired. GT-SUITE is a transient multi-physics simulation tool that is popular in the automotive industry and has a built in template for proton exchange membrane (PEM) fuel cells. However, terrestrial fuel cells used in the automotive industry vary significantly from aerospace fuel cells. A validation effort was undertaken to compare GT SUITE model results to actual data collected during the 2015 AMPS Power Module Demonstration in which the AMPS team used a PEM fuel cell system to power a 478 kg rover assembly at the Dunes test site located at GRC. The purpose of the model was to evaluate the efficacy of using GT SUITE to model a non-flow through PEM fuel cell system. The validation effort examined electrochemical performance including fuel cell stack voltage and power supplied, the thermal performance of the stack namely stack temperature and heat rejection rates, and the fluidic performance of the system including pressures, reactant consumption, and water production rates.

Gilligan, Ryan↗