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NASA NTRS2002

SEE and TID extension testing of the Xilinx XQR18V04 4Mbit radiation hardened configuration PROM

The XQR18V04 was evaluated for single event upset rates using proton and heavy ions. The PROM was demonstrated to be immune to latch-up, as well as to static upset in the flash memory cells, to an LET > 125 MeV/mg/cmz (effective). The PROM was also tested in a dynamic mode, which revealed three distinct error modes: Read Bit Errors, Address Errors, and a Single Event Functional Interrupt (SEW which affected the data output drivers. Saturation cross-sections, and onset thresholds, for these errorinodes were measured at the heavy ion facility at Texas A&M University, and the proton facility at UC Davis. Additional testing was performed at UC Davis and the Cobalt 60 source at McClellan Air Force Base to examine the effect to TID life as a function of power biasing. The PROM demonstrated a 100% improvement in total TID life with an 84% percent decrease in device usage.

FPGA Virtex II SEU↗
NASA NTRS1999

Proton Effects and Test Issues for Satellite Designers

Microelectronic and photonic systems in the natural space environment are bombarded by a variety of charged particles including electrons, trapped protons, cosmic rays, and solar particles (protons and other heavy ions). These incident particles cause both ionizing and non-ionizing effects when traversing a device, and the effects can be either transient or permanent. The vast majority of the kinetic energy of an incident proton is lost to ionization, creating the single event effects (SEES) and total ionizing dose (TID) effects. However, the small portion of energy lost in non-ionizing processes causes atoms to be removed from their lattice sites and form permanent electrically active defects in semiconductor materials. These defects, i.e., "displacement damage," can significantly degrade device performance. In general, most of the displacement damage effects in the natural space environment can be attributed to protons since they are plentiful and extremely energetic (and therefore not readily shielded against). For this reason, we consider only proton induced displacement damage in this course. (Nevertheless, we identify solar cells as an important example of a case where both electron and proton damage can be important since only very light shielding is feasible.) The interested reader is encouraged to explore the three previous NSREC and RADECS short courses which also treat displacement damage issues for satellite applications. Part A of this segment of the short course introduces the space environment, proton shielding issues, and requirements specifications for proton-rich environments. In order to exercise the displacement damage analysis tools for on-orbit performance predictions, the requirements document must provide the relevant proton spectra in addition to the usual total ionizing dose-depth curves. Ion-solid interactions and the nature of the displacement damage they generate have been studied extensively for over half a century, yet they still remain a subject of investigation. In this section, a description of the mechanisms by which displacement damage is produced will be followed by a summary of the major consequences for device performance in a space environment. Often the degradation of a device parameter can be characterized by a damage factor (measured in a laboratory using monoenergetic protons) that is simply the change in a particular electrical or optical parameter per unit proton fluence. In addition, we will describe the concept of a non-ionizing energy loss rate (NIEL) which quantifies that portion of the energy lost by an incident ion that goes into displacements. It has been calculated as a function of proton energy, and is analogous to (and has the same units as) the linear energy transfer (LET) for ionizing energy. We will discover that, to first order, the calculated NIEL describes the energy dependence of the measured device damage factors. This observation provides the basis for predicting proton induced device degradation in a space environment based on both the calculated NIEL and relatively few laboratory test measurements. The methodology of such on-orbit device performance predictions will be described, as well as the limitations. Several classes of devices for which displacement damage is a significant (if not the dominant) mode of radiation induced degradation will be presented.

Marshall, Cheryl J.↗
NASA NTRS1999

Proton Effects and Test Issues for Satellite Designers: Displacement Effects - Section 4

Microelectronic and photonic systems in the natural space environment are bombarded by a variety of charged particles including electrons, trapped protons, cosmic rays, and solar particles (protons and other heavy ions). These incident particles cause both ionizing and non-ionizing effects when traversing a device, and the effects can be either transient or permanent. The vast majority of the kinetic energy of an incident proton is lost to ionization, creating the single event effects (SEES) and total ionizing dose (TID) effects described in section IVA. However, the small portion of energy lost in non-ionizing processes causes atoms to be removed from their lattice sites and form permanent electrically active defects in semiconductor materials. These defects, i.e., "displacement damage," can significantly degrade device performance. In general, most of the displacement damage effects in the natural space environment can be attributed to protons since they are plentiful and extremely energetic (and therefore not readily shielded against). For this reason, we consider only proton induced displacement damage in this course. (Nevertheless, we identify solar cells as an important example of a case where both electron and proton damage can be important since only very light shielding is feasible.) The interested reader is encouraged to explore the three previous NSREC and RADECS short courses [Srou88a, Summ92, Hopk97] which also treat displacement damage issues for satellite applications. Part A of this segment of the short course introduces the space environment, proton shielding issues, and requirements specifications for proton-rich environments. In order to exercise the displacement damage analysis tools for on-orbit performance predictions, the requirements document must provide the relevant proton spectra in addition to the usual total ionizing dose-depth curves.

Marshall, Cheryl J.↗
NASA NTRS2018

The International Space Station Space Radiation Environment: Avionics Systems Performance in Low-Earth Orbit Single Event Effects (SEE) Environments

Single event effects (SEE) are those errors, anomalies, or failures in microelectronic devices caused by the passage of a single energetic charged particle through the device. Spacecraft SEE environments consist primarily of energetic charged particles; both primary particles originating in the natural environment and secondary particles (including secondary neutrons) produced by nuclear reactions of primary particles with spacecraft materials. The energetic charged particle components (electrons, protons, and atomic nuclei) of the spacecraft SEE environment include galactic cosmic rays (GCR), and planetary radiation belt charged particles, as well as solar energetic particle event (SPE) charged particles. The International Space Station (ISS) orbital altitude and inclination (~350 km to ~420 km at 51.6o inclination) results in a spacecraft SEE environment that varies dramatically with the location in Earth?s geomagnetic field. Geomagnetic GCR shielding diminishes with distance from the geomagnetic equator. Near + 51.6o latitude the ISS GCR environment has a high degree of similarity to the interplanetary GCR environment in cis-Lunar space.SEE environments supporting ISS avionics systems design, development, test, and verification are documented in SSP-30512, Space Station Ionizing Radiation Design Environment. Comparisons of overall ISS avionics systems in-flight performance with pre-flight verification report predictions have been previously reported and meet or exceed expectations in all cases.In this paper we report the results of more detailed investigations of the effects of geographic location, altitude, solar cycle, and shielding mass effects on the in-flight SEE performance of the ISS command and data handling system during the past 17 years. In addition, we report on the preflight testing and in-flight performance of the commercial-off-the-shelf lap top computers used on ISS. Finally, we present an assessment of ISS as an avionics SEE test and flight demonstration platform for exploration hardware destined for the cis-lunar or other inner solar system environments.

International Space Station↗
NASA NTRS1999

1999 NSREC Short Course: Proton Effects and Test Issues for Satellite Designers: Displacement Effects

This portion of the Short Course is divided into two segments to separately address the two major proton-related effects confronting satellite designers: ionization effects and displacement damage effects. While both of these topics are deeply rooted in "traditional" descriptions of space radiation effects, there are several factors at play to cause renewed concern for satellite systems being designed today. For example, emphasis on Commercial Off-The-Shelf (COTS) technologies in both commercial and government systems increases both Total Ionizing Dose (TID) and Single Event Effect (SEE) concerns. Scaling trends exacerbate the problems, especially with regard to SEEs where protons can dominate soft error rates and even cause destructive failure. In addition, proton-induced displacement damage at fluences encountered in natural space environments can cause degradation in modern bipolar circuitry as well as in many emerging electronic and opto-electronic technologies.

Marshall, Cheryl J.↗
NASA NTRS1999

Proton Effects and Test Issues for Satellite Designers: Ionization Effects - Section 4

This portion of the Short Course is divided into two segments to separately address the two major proton-related effects confronting satellite designers: ionization effects and displacement damage effects. While both of these topics are deeply rooted in "traditional" descriptions of space radiation effects, there are several factors at play to cause renewed concern for satellite systems being designed today. For example, emphasis on Commercial Off-The-Shelf (COTS) technologies in both commercial and government systems increases both Total Ionizing Dose (TID) and Single Event Effect (SEE) concerns. Scaling trends exacerbate the problems, especially with regard to SEEs where protons can dominate soft error rates and even cause destructive failure. In addition, proton-induced displacement damage at fluences encountered in natural space environments can cause degradation in modern bipolar circuitry as well as in many emerging electronic and opto-electronic technologies. A crude, but nevertheless telling, indication of the level of concern for proton effects follows from surveying the themes treated in papers presented at this conference. The table lists themes found in the IEEE Transaction on Nuclear Science (TNS) December issue from the past year and compares them with the December issue's content a decade earlier. Ten years ago there were nine papers, or about 10% of the total, dealing with the four indicated topics. At that time, single event effects from protons were the primary concern, and these were thought to be possible only when a nuclear reaction initiated energetic recoil atoms. This is shown in the table as the 'traditional" SEE subject. A decade later, submissions addressing this topic had doubled, while papers devoted to displacement damage studies had increased from one to nine! More importantly, displacement damage effects in the natural space environments have become a concern for degradation in modern devices (other than solar cells), and this was not so ten years earlier.

Marshall, Paul W.↗
NASA NTRS2011

Pulsed Laser System to Simulate Effects of Cosmic Rays in Semiconductor Devices

Spaceflight system electronic devices must survive a wide range of radiation environments with various particle types including energetic protons, electrons, gamma rays, x-rays, and heavy ions. High-energy charged particles such as heavy ions can pass straight through a semiconductor material and interact with a charge-sensitive region, generating a significant amount of charge (electron-hole pairs) along their tracks. These excess charges can damage the device, and the response can range from temporary perturbations to permanent changes in the state or performance. These phenomena are called single event effects (SEE). Before application in flight systems, electronic parts need to be qualified and tested for performance and radiation sensitivity. Typically, their susceptibility to SEE is tested by exposure to an ion beam from a particle accelerator. At such facilities, the device under test (DUT) is irradiated with large beams so there is no fine resolution to investigate particular regions of sensitivity on the parts. While it is the most reliable approach for radiation qualification, these evaluations are time consuming and costly. There is always a need for new cost-efficient strategies to complement accelerator testing: pulsed lasers provide such a solution. Pulsed laser light can be utilized to simulate heavy ion effects with the advantage of being able to localize the sensitive region of an integrated circuit. Generally, a focused laser beam of approximately picosecond pulse duration is used to generate carrier density in the semiconductor device. During irradiation, the laser pulse is absorbed by the electronic medium with a wavelength selected accordingly by the user, and the laser energy can ionize and simulate SEE as would occur in space. With a tightly focused near infrared (NIR) laser beam, the beam waist of about a micrometer can be achieved, and additional scanning techniques are able to yield submicron resolution. This feature allows mapping of all of the sensitive regions of the studied device with fine resolution, unlike heavy ion experiments. The problematic regions can be precisely identified, and it provides a considerable amount of information about the circuit. In addition, the system allows flexibility for testing the device in different configurations in situ.

Aveline, David C.↗
NASA NTRS2022

Mission Radiation Environment Modeling and Analysis: Avionics Trade Study for GCD Rad-Neuro Project

The two main objectives of this trade study are characterizing the mission radiation environment for multiple Design Reference Missions (DRM) and analysis of radiation effects on avionics with the goal of producing radiation tolerant Neuromorphic Computing processor chips with innovative radiation-induced fault mitigation. The NASA process for defining radiation requirements for flight avionics is applied to this domain. The effects of trapped protons and electrons in the Van Allen radiation belts predominates in Low-Earth-Orbit (LEO) and the solar wind, solar flares and Galactic Cosmic Rays (GCRs) are the dominant radiation challenge in the open space between the planets of our solar system. The nature and energy of the particles that cause circuit upset and failure is very different in the two regimes. Two results are produced from the radiation models: determining the Total Integrated Dose (TID) experienced by avionics for a given DRM and predicting the Single Event Effects (SEE) rates for avionics during high rate exposure. These tools are applied to existing semiconductors and can be used for predicting the radiation performance of future semiconductors based on early radiation testing of new devices.

Space Radiation↗
NASA NTRS2017

Evaluation of the Radiation Susceptibility of a 3D NAND Flash Memory

We evaluated the heavy ion and proton-induced single-event effects (SEE) for a 3D NAND flash. The 3D NAND showed similar single-event upset (SEU) sensitivity to a planar NAND of similar density and performance in the multiple-cell level (MLC) storage mode. However, the single-level-cell (SLC) storage mode of the 3D NAND showed significantly reduced SEU susceptibility. Additionally, the 3D NAND showed less MBU susceptibility than the planar NAND, with reduced number of upset bits per byte and reduced cross sections overall. However, the 3D architecture exhibited angular sensitivities for both base and face angles, reflecting the anisotropic nature of the SEU vulnerability in space. Furthermore, the SEU cross section decreased with increasing fluence for both the 3D NAND and the latest generation planar NAND, indicating a variable upset rate for a space mission. These unique characteristics introduce complexity to traditional ground irradiation test procedures.

single-event upset (SEU)↗
NASA NTRS2004

Tradeoffs in Flight Design Upset Mitigation in State of the Art FPGAs: Hardened by Design vs. Design Level Hardening

This presentation compares and contrasts the effectiveness and the system/designer impacts of the two main approaches to upset hardening: the Actel approach (RTSX-S and RTAX-S) of low-level (inside each flip-flop) triplication and the Xilinx approach (Virtex and Virtex2) of design-level triplication of both functional blocks and voters. The effectiveness of these approaches is compared using measurements made in conjunction with each of the FPGAs' manufacturer: for Actel, published data [1] and for Xilinx, recent results from the Xilinx SEE Test Consortium (note that the author is an active and founding member). The impacts involve Actel advantages in the areas of transistor-utilization efficiency and minimizing designer involvement in the triplication while the Xilinx advantages relate to the ability to custom tailor upset hardness and the flexibility of re-configurability. Additionally, there are currently clear Xilinx advantages in available features such as the number of I/O's, logic cells, and RAM blocks as well as speed. However, the advantage of the Actel anti-fuses for configuration over the Xilinx SRAM cells is that the latter need additional functionality and external circuitry (PROMs and, at least a watchdog timer) for configuration and configuration scrubbing. Further, although effectively mitigated if done correctly, the proton upset-ability of the Xilinx FPGAs is a concern in severe proton-rich environments. Ultimately, both manufacturers' upset hardening is limited by SEFI (single-event functional interrupt) rates where it appears the Actel results are better although the Xilinx Virtex2-family result of about one SEFI in 65 device-years in solar-min GCR (the more intense part of the galactic cosmic-ray background) should be acceptable to most missions

radiation effects↗
NASA NTRS2005

Virtex-II Pro PowerPC SEE Characterization Test Methods and Results

The Xilinx Vix-11 Pro is a platform FPGA that embeds multiple microprocessors within the fabric of an SRAM-based reprogrammable FPGA. The variety and quantity of resources provided by this family of devices make them very attractive for spaceflight applications. However,these devices will be susceptible to single event effects (SEE), which must be mitigated. Observations from prior testing of the Xilinx Virtex-II Pro suggest that the PowerPC core has significant vulnerability to SEES. However, these initial tests were not designed to exclusively target the functionality of the PowerPC, therefore making it difficult to distinguish processor upsets from fabric upsets. The main focus of this paper involves detailed SEE testing of the embedded PowerPC core. Due to the complexity of the PowerPC, various custom test applications, both static and dynamic, will be designed to isolate each Unit of the processor. Collective analysis of the test results will provide insight into the exact upset mechanism of the PowerPC. With this information, mitigations schemes can be developed and tested that address the specific susceptibilities of these devices. The test bed will be the Xilinx SEE Consortium Virtex-II Pro test board, which allows for configuration scrubbing, design triplication, and ease of data collection. Testing will be performed at the Indiana University Cyclotron Facility using protons of varying energy levels and fluencies. This paper will present the detailed test approach along with the results.

Petrick, David↗
NASA NTRS2013

What Reliability Engineers Should Know about Space Radiation Effects

Space radiation in space systems present unique failure modes and considerations for reliability engineers. Radiation effects is not a one size fits all field. Threat conditions that must be addressed for a given mission depend on the mission orbital profile, the technologies of parts used in critical functions and on application considerations, such as supply voltages, temperature, duty cycle, and redundancy. In general, the threats that must be addressed are of two types-the cumulative degradation mechanisms of total ionizing dose (TID) and displacement damage (DD). and the prompt responses of components to ionizing particles (protons and heavy ions) falling under the heading of single-event effects. Generally degradation mechanisms behave like wear-out mechanisms on any active components in a system: Total Ionizing Dose (TID) and Displacement Damage: (1) TID affects all active devices over time. Devices can fail either because of parametric shifts that prevent the device from fulfilling its application or due to device failures where the device stops functioning altogether. Since this failure mode varies from part to part and lot to lot, lot qualification testing with sufficient statistics is vital. Displacement damage failures are caused by the displacement of semiconductor atoms from their lattice positions. As with TID, failures can be either parametric or catastrophic, although parametric degradation is more common for displacement damage. Lot testing is critical not just to assure proper device fi.mctionality throughout the mission. It can also suggest remediation strategies when a device fails. This paper will look at these effects on a variety of devices in a variety of applications. This paper will look at these effects on a variety of devices in a variety of applications. (2) On the NEAR mission a functional failure was traced to a PIN diode failure caused by TID induced high leakage currents. NEAR was able to recover from the failure by reversing the current of a nearby Thermal Electric Cooler (turning the TEC into a heater). The elevated temperature caused the PIN diode to anneal and the device to recover. It was by lot qualification testing that NEAR knew the diode would recover when annealed. This paper will look at these effects on a variety of devices in a variety of applications. Single Event Effects (SEE): (1) In contrast to TID and displacement damage, Single Event Effects (SEE) resemble random failures. SEE modes can range from changes in device logic (single-event upset, or SEU). temporary disturbances (single-event transient) to catastrophic effects such as the destructive SEE modes, single-event latchup (SEL). single-event gate rupture (SEGR) and single-event burnout (SEB) (2) The consequences of nondestructive SEE modes such as SEU and SET depend critically on their application--and may range from trivial nuisance errors to catastrophic loss of mission. It is critical not just to ensure that potentially susceptible devices are well characterized for their susceptibility, but also to work with design engineers to understand the implications of each error mode. -For destructive SEE, the predominant risk mitigation strategy is to avoid susceptible parts, or if that is not possible. to avoid conditions under which the part may be susceptible. Destructive SEE mechanisms are often not well understood, and testing is slow and expensive, making rate prediction very challenging. (3) Because the consequences of radiation failure and degradation modes depend so critically on the application as well as the component technology, it is essential that radiation, component. design and system engineers work togetherpreferably starting early in the program to ensure critical applications are addressed in time to optimize the probability of mission success.

DiBari, Rebecca↗