Search NASA⌕ Search

SEARCH · Search NASA

Results for “quantum efficiency”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 73 records · Page 4
All sourcesNASA NTRSDOE OSTI
NASA NTRS1995

Laboratory instrumentation and techniques for characterizing multi-junction solar cells for space applications

Multi-junction solar cells are attractive for space applications because they can be designed to convert a larger fraction of AMO into electrical power at a lower cost than single-junction cells. The performance of multi-junction cells is much more sensitive to the spectral irradiance of the illuminating source than single-junction cells. The design of high efficiency multi-junction cells for space applications requires matching the optoelectronic properties of the junctions to AMO spectral irradiance. Unlike single-junction cells, it is not possible to carry out quantum efficiency measurements using only a monochromatic probe beam and determining the cell short-circuit current assuming linearity of the quantum efficiency. Additionally, current-voltage characteristics can not be calculated from measurements under non-AMO light sources using spectral-correction methods. There are reports in the literature on characterizing the performance of multi junction cells by measuring and convoluting the quantum efficiency of each junction with the spectral irradiance; the technique is of limited value for the characterization of cell performance under AMO power-generating conditions. We report the results of research to develop instrumentation and techniques for characterizing multi junction solar cells for space . An integrated system is described which consists of a standard lamp, spectral radiometer, dual-source solar simulator, and personal computer based current-voltage and quantum efficiency equipment. The spectral radiometer is calibrated regularly using the tungsten-halogen standard lamp which has a calibration based on NIST scales. The solar simulator produces the light bias beam for current-voltage and cell quantum efficiency measurements. The calibrated spectral radiometer is used to 'fit' the spectral irradiance of the dual-source solar simulator to WRL AMO data. The quantum efficiency apparatus includes a monochromatic probe beam for measuring the absolute cell quantum efficiency at various voltage biases, including the voltage bias corresponding to the maximum-power point under AMO light bias. The details of the procedures to 'fit' the spectral irradiance to AMO will be discussed. An assessment of the role of the accuracy of the 'fit' of the spectral irradiance and probe beam intensity on measured cell characteristics will be presented. quantum efficiencies were measured with both spectral light bias and AMO light bias; the measurements show striking differences. Spectral irradiances were convoluted with cell quantum efficiencies to calculate cell currents as function of voltage. The calculated currents compare with measured currents at the 1% level. Measurements on a variety of multi-junction cells will be presented. The dependence of defects in junctions on cell quantum efficiencies measured under light and voltage bias conditions will be presented. Comments will be made on issues related to standards for calibration, and limitations of the instrumentation and techniques. Expeditious development of multi-junction solar cell technology for space presents challenges for cell characterization in the laboratory.

Woodyard, James R.↗
NASA NTRS1988

Soft X-ray and extreme utraviolet quantum detection efficiency of potassium chloride photocathode layers on microchannel plates

The quantum detection efficiency (QDE) of KCl photocathodes in the 44-1460 A range was investigated. An opaque layer of KCl, about 15,000-A-thick, was evaporated and applied the surface of a microchannel plate (MCP), and the contribution of the photocathode material in the channels (and on the interchannel web) to the QDE was measured using a Z stack MCP detector. It is shown that KCl is a relatively stable photocathode material, with the QDE equal to 30-40 percent in the EUV. At wavelengths above 200 A, the QDE is slightly better than the QDE of CsI, as reported by Siegmund et al. (1986). While the shape of the QDE curve as a function of wavelength is similar to those reported for CsI and KBr, KCl was found to lack the high QDE peak found in the curves of CsI and KBr at about 100 A. A simple QDE model is described, the predictions of which were found to agree with the measurements on the KCl photocathode.

Siegmund, Oswald H. W.↗
NASA NTRS2008

Dot-in-Well Quantum-Dot Infrared Photodetectors

Dot-in-well (DWELL) quantum-dot infrared photodetectors (QDIPs) [DWELL-QDIPs] are subjects of research as potentially superior alternatives to prior QDIPs. Heretofore, there has not existed a reliable method for fabricating quantum dots (QDs) having precise, repeatable dimensions. This lack has constituted an obstacle to the development of uniform, high-performance, wavelength-tailorable QDIPs and of focal-plane arrays (FPAs) of such QDIPs. However, techniques for fabricating quantum-well infrared photodetectors (QWIPs) having multiple-quantum- well (MQW) structures are now well established. In the present research on DWELL-QDIPs, the arts of fabrication of QDs and QWIPs are combined with a view toward overcoming the deficiencies of prior QDIPs. The longer-term goal is to develop focal-plane arrays of radiationhard, highly uniform arrays of QDIPs that would exhibit high performance at wavelengths from 8 to 15 m when operated at temperatures between 150 and 200 K. Increasing quantum efficiency is the key to the development of competitive QDIP-based FPAs. Quantum efficiency can be increased by increasing the density of QDs and by enhancing infrared absorption in QD-containing material. QDIPs demonstrated thus far have consisted, variously, of InAs islands on GaAs or InAs islands in InGaAs/GaAs wells. These QDIPs have exhibited low quantum efficiencies because the numbers of QD layers (and, hence, the areal densities of QDs) have been small typically five layers in each QDIP. The number of QD layers in such a device must be thus limited to prevent the aggregation of strain in the InAs/InGaAs/GaAs non-lattice- matched material system. The approach being followed in the DWELL-QDIP research is to embed In- GaAs QDs in GaAs/AlGaAs multi-quantum- well (MQW) structures (see figure). This material system can accommodate a large number of QD layers without excessive lattice-mismatch strain and the associated degradation of photodetection properties. Hence, this material system is expected to enable achievement of greater densities of QDs and correspondingly greater quantum efficiencies. The host GaAs/AlGaAs MQW structures are highly compatible with mature fabrication processes that are now used routinely in making QWIP FPAs. The hybrid InGaAs-dot/GaAs/AlGaAs-well system also offers design advantages in that the effects of variability of dot size can be partly compensated by engineering quantum-well sizes, which can be controlled precisely.

Gunapala, Sarath↗
NASA NTRS1990

Extreme ultraviolet quantum detection efficiency of rubidium bromide opaque photocathodes

Measurements are presented of the quantum detection efficiency (QDE) of three samples of RbBr photocathode layers over the 44-150-A wavelength range. The QDE of RbBr-coated microchannel plate (MCP) was measured using a back-to-back Z-stack MCP configuration in a detector with a wedge and strip position-sensitive anode, of the type described by Siegmund et al. (1984). To assess the stability of RbBr layer, the RbBr photocathode was exposed to air at about 30 percent humidity for 20 hr. It was found that the QDE values for the aged cathode were within the QDE measurement errors of the original values. A simple QDE model was developed, and it was found that its predictions are in accord with the QDE measurements.

Siegmund, Oswald H. W.↗
NASA NTRS1987

Development of a unique laboratory standard: Indium gallium arsenide detector for the 500-1700 nm spectral region

A planar (5 mm diameter) indium gallium arsenide detector having a high (greater than 50 pct) quantum efficiency from the visible into the infrared spectrum (500 to 1700 nm) was fabricated. Quantum efficiencies as high as 37 pct at 510 nm, 58 pct at 820 nm and 62 pct at 1300 nm and 1550 nm were measured. A planar InP/InGaAs detector structure was also fabricated using vapor phase epitaxy to grow device structures with 0, 0.2, 0.4 and 0.6 micrometer thick InP caps. Quantum efficiency was studied as a function of cap thickness. Conventional detector structures were also used by completely etching off the InP cap after zinc diffusion. Calibrated quantum efficiencies were measured. Best results were obtained with devices whose caps were completely removed by etching. Certain problems still remain with these detectors including non-uniform shunt resistance, reproducibility, contact resistance and narrow band anti-reflection coatings.

Source record↗
NASA NTRS1984

Improved charge injection device and a focal plane interface electronics board for stellar tracking

An improved Charge Injection Device (CID) stellar tracking sensor and an operating sensor in a control/readout electronics board were developed. The sensor consists of a shift register scanned, 256x256 CID array organized for readout of 4x4 subarrays. The 4x4 subarrays can be positioned anywhere within the 256x256 array with a 2 pixel resolution. This allows continuous tracking of a number of stars simultaneously since nine pixels (3x3) centered on any star can always be read out. Organization and operation of this sensor and the improvements in design and semiconductor processing are described. A hermetic package incorporating an internal thermoelectric cooler assembled using low temperature solders was developed. The electronics board, which contains the sensor drivers, amplifiers, sample hold circuits, multiplexer, analog to digital converter, and the sensor temperature control circuits, is also described. Packaged sensors were evaluated for readout efficiency, spectral quantum efficiency, temporal noise, fixed pattern noise, and dark current. Eight sensors along with two tracker electronics boards were completed, evaluated, and delivered.

Michon, G. J.↗
NASA NTRS1993

Germanium blocked-impurity-band detector arrays - Unpassivated devices with bulk substrates

We have fabricated and characterized six-element monolithic arrays of Ge:Ga blocked-impurity-band detectors, with threshold wavelength 220 microns, peak quantum efficiency 14 percent, detective quantum efficiency 9 percent, dark current 300 e(-)/s, and response uniformity better than 4 percent. The devices are described very well by the standard model of blocked-impurity-band detectors and appear to satisfy many of the requirements of low-background astronomical instruments.

Watson, Dan M.↗
NASA NTRS1987

Ultraviolet and extreme ultraviolet response of charge-coupled-device detectors

Results of a program to enhance the ultraviolet and extreme ultraviolet response of charge-coupled devices are presented. The ultimate goal of the program is to develop a large format device with both high and stable quantum efficiency from 100 to 3000 A that can be used as a windowless imaging detector in a space environment. Ultraviolet quantum efficiency measurements have been made for several ion-implanted and laser-annealed test CCDs. Quantum efficiencies as high as 22 percent at 2500 A, where the absorption depth in silicon is about 55 A, have been observed in one such test CCD. Quantum efficiency measurements of standard back-illuminated CCDs are also presented.

Stern, R. A.↗
NASA NTRS1987

Ultraviolet quantum detection efficiency of potassium bromide as an opaque photocathode applied to microchannel plates

The quantum detection efficiency (QDE) of potassium bromide as a photocathode applied directly to the surface of a microchannel plate over the 250-1600 A wavelength range has been measured. The contributions of the photocathode material in the channels and on the interchannel web to the QDE have been determined. Two broad peaks in the QDE centered at about 450 and about 1050 A are apparent, the former with about 50 percent peak QDE and the latter with about 40 percent peak QDE. The photoelectric threshold is observed at about 1600 A, and there is a narrow QDE minimum at about 750 A which correlates with 2X the band gap energy for KBr. The angular variation of the QDE from 0 to 40 deg to the channnel axis has also been examined. The stability of Kbr with time is shown to be good with no significant degradation of QDE at wavelengths below 1216 A over a 15-day period in air.

Siegmund, Oswald H. W.↗
NASA NTRS1987

Primary quantum yields of NO2 photodissociation

The quantum yields of formation of NO, O2, and NO2 loss are measured for NO2 vapor at low pressures (0.13-0.30 torr) irradiated at 334-405 nm wavelengths and temperature in the range 273-370 K in order to study the primary quantum efficiencies of NO2 photodecomposition. The temperature and wavelength dependences of the primary quantum efficiencies are examined. It is observed that the primary quantum efficiencies increase rapidly from near zero at 424 nm to near unity for excitation at wavelengths less than 394 nm. The theory of Pitts et al. (1964) that the energy deficiency for photodissociation of NO2 excited at wavelengths greater than 397.9 nm is due to the rotational and vibrational energy of the NO2 molecules is confirmed by the data. Values for the primary quantum yields of NO2 photodecomposition as a function of wavelength are presented.

Gardner, Edward P.↗
NASA NTRS1993

High-performance visible/UV CCD focal plane technology for spacebased applications

We describe recent technology developments aimed at large CCD imagers for space based applications in the visible and UV. Some of the principal areas of effort include work on reducing device degradation in the natural space-radiation environment, improvements in quantum efficiency in the visible and UV, and larger-device formats. One of the most serious hazards for space based CCD's operating at low signal levels is the displacement damage resulting from bombardment by energetic protons. Such damage degrades charge-transfer efficiency and increases dark current. We have achieved improved hardness to proton-induced displacement damage by selective ion implants into the CCD channel and by reduced temperature of operation. To attain high quantum efficiency across the visible and UV we have developed a technology for back-illuminated CCD's. With suitable antireflection (AR) coatings such devices have quantum efficiencies near 90 percent in the 500-700-nm band. In the UV band from 200 to 400 nm, where it is difficult to find coatings that are sufficiently transparent and can provide good matching to the high refractive index of silicon, we have been able to substantially increase the quantum efficiency using a thin film of HfO2 as an AR coating. These technology efforts were applied to a 420 x 420-pixel frame-transfer imager, and future work will be extended to a 1024 x 1024-pixel device now under development.

Burke, B. E.↗
NASA NTRS2006

Long-Wavelength Infrared (LWIR) Quantum Dot Infrared Photodetector (QDIP) Focal Plane Array

We have exploited the artificial atomlike properties of epitaxially self-assembled quantum dots for the development of high operating temperature long wavelength infrared (LWIR) focal plane arrays. Quantum dots are nanometer-scale islands that form spontaneously on a semiconductor substrate due to lattice mismatch. QDIPs are expected to outperform quantum well infrared detectors (QWIPs) and are expected to offer significant advantages over II-VI material based focal plane arrays. QDIPs are fabricated using robust wide bandgap III-V materials which are well suited to the production of highly uniform LWIR arrays. We have used molecular beam epitaxy (MBE) technology to grow multi-layer LWIR quantum dot structures based on the InAs/InGaAs/GaAs material system. JPL is building on its significant QWIP experience and is basically building a Dot-in-the-Well (DWELL) device design by embedding InAs quantum dots in a QWIP structure. This hybrid quantum dot/quantum well device offers additional control in wavelength tuning via control of dot-size and/or quantum well sizes. In addition the quantum wells can trap electrons and aide in ground state refilling. Recent measurements have shown a 10 times higher photoconductive gain than the typical QWIP device, which indirectly confirms the lower relaxation rate of excited electrons (photon bottleneck) in QDPs. Subsequent material and device improvements have demonstrated an absorption quantum efficiency (QE) of approx. 3%. Dot-in-the-well (DWELL) QDIPs were also experimentally shown to absorb both 45 deg. and normally incident light. Thus we have employed a reflection grating structure to further enhance the quantum efficiency. JPL has demonstrated wavelength control by progressively growing material and fabricating devices structures that have continuously increased in LWIR response. The most recent devices exhibit peak responsivity out to 8.1 microns. Peak detectivity of the 8.1 micrometer devices has reached approx. 1 x 10(exp 10) Jones at 77 K. Furthermore, we have fabricated the first long-wavelength 640x512 pixels QDP focal plane array. This QDIP focal plane may has produced excellent infrared imagery with noise equivalent temperature difference of 40 mK at 60K operating temperature. In addition, we have managed to increase the quantum efficiency of these devices from 0.1% (according to the data published in literature) to 20% in discrete devices. This is a factor of 200 increase in quantum efficiency. With these excellent results, for the first time QDIP performance has surpassed the QWIP performance. Our goal is to operate these long-wavelength detectors at much higher operating temperature than 77K which can be passively achieved in space. This will be a huge leap in high performance infrared detectors specifically applicable to space science instruments.

infrared imaging↗
NASA NTRS2007

Gratings and Random Reflectors for Near-Infrared PIN Diodes

Crossed diffraction gratings and random reflectors have been proposed as means to increase the quantum efficiencies of InGaAs/InP positive/intrinsic/ negative (PIN) diodes designed to operate as near-infrared photodetectors. The proposal is meant especially to apply to focal-plane imaging arrays of such photodetectors to be used for near-infrared imaging. A further increase in quantum efficiency near the short-wavelength limit of the near-infrared spectrum of such a photodetector array could be effected by removing the InP substrate of the array. The use of crossed diffraction gratings and random reflectors as optical devices for increasing the quantum efficiencies of quantum-well infrared photodetectors (QWIPs) was discussed in several prior NASA Tech Briefs articles. While the optical effects of crossed gratings and random reflectors as applied to PIN photodiodes would be similar to those of crossed gratings and random reflectors as applied to QWIPs, the physical mechanisms by which these optical effects would enhance efficiency differ between the PIN-photodiode and QWIP cases: In a QWIP, the multiple-quantum-well layers are typically oriented parallel to the focal plane and therefore perpendicular or nearly perpendicular to the direction of incidence of infrared light. By virtue of the applicable quantum selection rules, light polarized parallel to the focal plane (as normally incident light is) cannot excite charge carriers and, hence, cannot be detected. A pair of crossed gratings or a random reflector scatters normally or nearly normally incident light so that a significant portion of it attains a component of polarization normal to the focal plane and, hence, can excite charge carriers. A pair of crossed gratings or a random reflector on a PIN photodiode would also scatter light into directions away from the perpendicular to the focal plane. However, in this case, the reason for redirecting light away from the perpendicular is to increase the length of the optical path through the detector to increase the probability of absorption of photons and thereby increase the resulting excitation of charge carriers. A pair of crossed gratings or a random reflector according to the proposal would be fabricated as an integral part of photodetector structure on the face opposite the focal plane (see figure). In the presence of crossed gratings, light would make four passes through the device before departing. In the presence of a random reflector, a significant portion of the light would make more than four passes: After each bounce, light would be scattered at a different random angle, and would have a chance to escape only when it was reflected, relative to the normal, at an angle less than the critical angle for total internal reflection. Given the indices of refraction of the photodiode materials, this angle would be about 17 . This amounts to a very narrow cone for escape of trapped light.

Gunapala, Sarath↗
NASA NTRS2013

The DUV Stability of Superlattice-Doped CMOS Detector Arrays

JPL and Alacron have recently developed a high performance, DUV camera with a superlattice doped CMOS imaging detector. Supperlattice doped detectors achieve nearly 100% internal quantum efficiency in the deep and far ultraviolet, and a single layer, Al2O3 antireflection coating enables 64% external quantum efficiency at 263nm. In lifetime tests performed at Applied Materials using 263 nm pulsed, solid state and 193 nm pulsed excimer laser, the quantum efficiency and dark current of the JPL/Alacron camera remained stable to better than 1% precision during long-term exposure to several billion laser pulses, with no measurable degradation, no blooming and no image memory at 1000 fps.

silicon detectors↗
NASA NTRS1982

High density Schottky barrier IRCCD sensors for SWIR applications at intermediate temperature

Monolithic 32 x 64 and 64 x 1:128 palladium silicide (Pd2Si) interline transfer infrared charge coupled devices (IRCCDs) sensitive in the 1 to 3.5 micron spectral band were developed. This silicon imager exhibits a low response nonuniformity of typically 0.2 to 1.6% rms, and was operated in the temperature range between 40 to 140 K. Spectral response measurements of test Pd2Si p-type Si devices yield quantum efficiencies of 7.9% at 1.25 microns, 5.6% at 1.65 microns 2.2% at 2.22 microns. Improvement in quantum efficiency is expected by optimizing the different structural parameters of the Pd2Si detectors. The spectral response of the Pd2Si detectors fit a modified Fowler emission model. The measured photo-electric barrier height for the Pd2Si detectors is 0.34 eV and the measured quantum efficiency coefficient, C1, is 19%/eV. The dark current level of Pd2Si Schottky barrier focal plane arrays (FPAs) is sufficiently low to enable operation at intermediate temperatures at TV frame rates. Typical dark current level measured at 120 K on the FPA is 2 nA/sq cm. The operating temperature of the Pd2Si FPA is compatible with passive cooler performance. In addition, high density Pd2Si Schottky barrier FPAs are manufactured with high yield and therefore represent an economical approach to short wavelength IR imaging. A Pd2Si Schottky barrier image sensor for push-broom multispectral imaging in the 1.25, 1.65, and 2.22 micron bands is being studied. The sensor will have two line arrays (dual band capability) of 512 detectors each, with 30 micron center-to-center detector spacing. The device will be suitable for chip-to-chip abutment, thus providing the capability to produce large, multiple chip focal planes with contiguous, in-line sensors.

Elabd, H.↗
NASA NTRS2008

Lidar System for Airborne Measurement of Clouds and Aerosols

A lidar system for measuring optical properties of clouds and aerosols at three wavelengths is depicted. The laser transmitter is based on a Nd:YVO4 laser crystal pumped by light coupled to the crystal via optical fibers from laser diodes that are located away from the crystal to aid in dissipating the heat generated in the diodes and their drive circuits. The output of the Nd:YVO4 crystal has a wavelength of 1064 nm, and is made to pass through frequency-doubling and frequency-tripling crystals. As a result, the net laser output is a collinear superposition of beams at wavelengths of 1064, 532, and 355 nm. The laser operates at a pulse-repetition rate of 5 kHz, emitting per-pulse energies of 50 microJ at 1064 nm, 25 microJ at 532 nm and 50 microJ at 355 nm. An important feature of this system is an integrating sphere located between the laser output and the laser beam expander lenses. The integrating sphere collects light scattered from the lenses. Three energy-monitor detectors are located at ports inside the integrating sphere. Each of these detectors is equipped with filters such that the laser output energy is measured independently for each wavelength. The laser output energy is measured on each pulse to enable the most accurate calibration possible. The 1064-nm and 532-nm photodetectors are, more specifically, single photon-counting modules (SPCMs). When used at 1064 nm, these detectors have approximately 3% quantum efficiency and low thermal noise (fewer than 200 counts per second). When used at 532 nm, the SPCMs have quantum efficiency of about 60%. The photodetector for the 355-nm channel is a photon-counting photomultiplier tube having a quantum efficiency of about 20%. The use of photon-counting detectors is made feasible by the low laser pulse energy. The main advantage of photon-counting is ease of inversion of data without need for complicated calibration schemes like those necessary for analog detectors. The disadvantage of photon-counting detectors is that they inherently have narrow dynamic ranges. However, by using photon-counting detectors along with a high-repetition rate laser, it is possible to obtain wide dynamic range through accumulation of counts over many pulses.

McGill, Matthew↗
NASA NTRS2024

Determining the Quantum Detection Efficiency of A Soft X-Ray Micro-Channel Plate Detector for the Lunar Mission, LEXI

Micro-channel plate (MCP) detectors have long been a workhorse for space-based x-ray research and are advantageous over other imaging detectors because of their low size, weight and power. The Lunar Environment heliospheric x-ray Imager (LEXI), will utilize a MCP to image Earth’s magnetosphere in soft x-rays from the lunar surface. A critical element for interpreting on-orbit data is to understand the quantum detection efficiency (QDE) of the MCP. LEXI’s MCP is coated with potassium bromide (KBr) to increase the soft x-ray QDE. Historically, few measurements of QDE exist in the soft x-ray band for KBr detectors. This paper reviews the performance of LEXI’s detector, and the QDE experiment procedure conducted at and results from the Advanced Light Source synchrotron soft x-ray beam line (6.3.2) over the energy range 70eV-1300eV. A unique beam line setup was required to limit the photon flux as to not saturate the pores of the MCP or detector signal chain. The experimental results are similar to previous literature, with some caveats unique to this MCP and experimental setup.

X-ray imaging↗